JP2010147191A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2010147191A
JP2010147191A JP2008321512A JP2008321512A JP2010147191A JP 2010147191 A JP2010147191 A JP 2010147191A JP 2008321512 A JP2008321512 A JP 2008321512A JP 2008321512 A JP2008321512 A JP 2008321512A JP 2010147191 A JP2010147191 A JP 2010147191A
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led chip
light
substrate
type semiconductor
semiconductor layer
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Yoji Urano
洋二 浦野
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Panasonic Electric Works Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device for improving luminous efficiency. <P>SOLUTION: An LED chip 10 is packaged on a packaging substrate 20 in a shape where an LED thin-film section 12 is closer to the packaging substrate 20 than a transparent substrate 11 in a hexagonal weight shape. In the packaging substrate 20, conductor patterns 23, 23 joined to a cathode electrode 18 and an anode electrode 17 of the LED chip 10 via bumps 30, 30 are formed at one surface side of a light-transmitting substrate 21, and a reflection film 25 for reflecting light radiated to the side of the packaging substrate 20 from the LED chip 10 is formed on the other surface of the light-transmitting substrate 21. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を備えた発光装置に関するものである。   The present invention relates to a light emitting device including an LED chip (light emitting diode chip).

従来から、ＧａＮ系の窒化物半導体材料（例えば、ＧａＮ、ＩｎＧａＮ、ＡｌＧａＮなど）を発光層の材料として利用したＬＥＤチップを実装基板にフリップチップ実装してなる発光装置が知られている（例えば、特許文献１）。   2. Description of the Related Art Conventionally, a light emitting device is known in which an LED chip using a GaN-based nitride semiconductor material (for example, GaN, InGaN, AlGaN, etc.) as a light emitting layer material is flip-chip mounted on a mounting substrate (for example, Patent Document 1).

上記特許文献１には、図３に示すように、発光層１５’からの光に対して透明な透明基板１０ａ’の一表面側にｎ形ＧａＮ層からなるｎ形半導体層１４’と発光層１５’とｐ形ＧａＮ層からなるｐ形半導体層１６’との積層構造を有するＬＥＤチップ１０’と、当該ＬＥＤチップ１０’がフリップチップ実装された実装基板２０’とを備えた発光装置Ａ’が記載されている。   In Patent Document 1, as shown in FIG. 3, an n-type semiconductor layer 14 ′ made of an n-type GaN layer and a light-emitting layer on one surface side of a transparent substrate 10a ′ that is transparent to light from the light-emitting layer 15 ′. A light emitting device A ′ including an LED chip 10 ′ having a laminated structure of 15 ′ and a p-type semiconductor layer 16 ′ made of a p-type GaN layer, and a mounting substrate 20 ′ on which the LED chip 10 ′ is flip-chip mounted. Is described.

ここにおいて、ＬＥＤチップ１０’は、透明基板１０ａ’として結晶成長用基板であるサファイア基板を用いており、透明基板１０ａ’の上記一表面側にバッファ層１０ｂ’および光均一化層１３’を介してｎ形半導体層１４’が形成され、ｎ形半導体層１４’における光均一化層１３’側とは反対側に発光層１５’が形成され、発光層１５’におけるｎ形半導体層１４’側とは反対側にｐ形半導体層１６’が形成されており、ｐ形半導体層１６’における発光層１５’側とは反対側にアノード電極１７’が形成され、ｎ形窒化物半導体１４’における発光層１５’側の露出表面にカソード電極１８’が形成されている。   Here, the LED chip 10 ′ uses a sapphire substrate which is a crystal growth substrate as the transparent substrate 10a ′, and the buffer substrate 10b ′ and the light uniformizing layer 13 ′ are disposed on the one surface side of the transparent substrate 10a ′. An n-type semiconductor layer 14 ′ is formed, a light emitting layer 15 ′ is formed on the opposite side of the n-type semiconductor layer 14 ′ from the light uniformizing layer 13 ′ side, and the light emitting layer 15 ′ has an n-type semiconductor layer 14 ′ side. A p-type semiconductor layer 16 ′ is formed on the opposite side to the light emitting layer 15 ′ side of the p-type semiconductor layer 16 ′, and an anode electrode 17 ′ is formed on the opposite side to the n-type nitride semiconductor 14 ′. A cathode electrode 18 ′ is formed on the exposed surface on the light emitting layer 15 ′ side.

また、実装基板２０’は、例えば、窒化アルミニウム基板からなる平板状の絶縁性基板２０ａ’の一表面側にＬＥＤチップ１０’のアノード電極１７’およびカソード電極１８’それぞれがバンプ３０’，３０’を介して電気的に接続される金属層からなる導体パターン（配線パターン）２３’，２３’が形成されている。   Further, the mounting substrate 20 ′ has, for example, an anode electrode 17 ′ and a cathode electrode 18 ′ of the LED chip 10 ′ with bumps 30 ′ and 30 ′ on one surface side of a flat insulating substrate 20a ′ made of an aluminum nitride substrate. Conductor patterns (wiring patterns) 23 ′ and 23 ′ made of a metal layer electrically connected through the wirings are formed.

なお、上記特許文献１には、結晶成長用基板として、サファイア基板の他に、ＧａＮ基板やＺｎＯ基板などを用いてもよいことが記載されている。
特開２００７−３２９４６３号公報 Note that Patent Document 1 describes that a GaN substrate, a ZnO substrate, or the like may be used as the crystal growth substrate in addition to the sapphire substrate.
JP 2007-329463 A

ところで、図３に示した構成の発光装置Ａ’は、透明基板１０ａの他表面が光取り出し面となるようにＬＥＤチップ１０’を実装基板２０’にフリップチップ実装したものであり、アノード電極１７’が発光層１５’からの光を反射する反射ミラーを兼ねているので、アノード電極１７’で反射された光の一部が発光層１５’に再吸収されて発光効率が低下してしまう。   Incidentally, the light emitting device A ′ having the configuration shown in FIG. 3 is obtained by flip-chip mounting the LED chip 10 ′ on the mounting substrate 20 ′ so that the other surface of the transparent substrate 10 a becomes a light extraction surface. Since 'also serves as a reflection mirror that reflects the light from the light emitting layer 15', a part of the light reflected by the anode electrode 17 'is reabsorbed by the light emitting layer 15' and the light emission efficiency is lowered.

本発明は上記事由に鑑みて為されたものであり、その目的は、発光効率の向上を図れる発光装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device capable of improving the light emission efficiency.

請求項１の発明は、ＬＥＤチップと、当該ＬＥＤチップが実装された実装基板とを備え、ＬＥＤチップは、ｎ形半導体層とｐ形半導体層とを有するＬＥＤ薄膜部、ｎ形半導体層に電気的に接続されたカソード電極およびｐ形半導体層に電気的に接続されたアノード電極が透明基体の一表面側に形成され、当該透明基体よりもＬＥＤ薄膜部が実装基板に近くなる形で実装基板に実装されてなり、実装基板は、透光性基板の一表面側にＬＥＤチップのカソード電極およびアノード電極それぞれとバンプを介して接合される導体パターンが形成され、透光性基板の他表面にＬＥＤチップから実装基板側に放射された光を反射する反射膜が形成されてなることを特徴とする。   The invention of claim 1 includes an LED chip and a mounting substrate on which the LED chip is mounted. The LED chip is electrically connected to an n-type semiconductor layer, an LED thin film portion having an n-type semiconductor layer and a p-type semiconductor layer. Mounting substrate in which an electrically connected cathode electrode and an anode electrode electrically connected to the p-type semiconductor layer are formed on one surface side of the transparent substrate, and the LED thin film portion is closer to the mounting substrate than the transparent substrate In the mounting substrate, a conductive pattern bonded to each of the cathode electrode and the anode electrode of the LED chip via the bump is formed on one surface side of the light transmitting substrate, and on the other surface of the light transmitting substrate. A reflection film that reflects light emitted from the LED chip toward the mounting substrate is formed.

この発明によれば、ＬＥＤチップは、透明基体よりもＬＥＤ薄膜部が実装基板に近くなる形で実装基板に実装され、実装基板は、透光性基板の一表面側にＬＥＤチップのカソード電極およびアノード電極それぞれとバンプを介して接合される導体パターンが形成され、透光性基板の他表面にＬＥＤチップから実装基板側に放射された光を反射する反射膜が形成されているので、ＬＥＤ薄膜部と反射膜との距離を比較的長くすることができ、ＬＥＤ薄膜部から実装基板側へ放射され反射膜で反射される光のＬＥＤチップへの再入射量を低減でき、光取り出し効率が向上するから、発光効率の向上を図れる。   According to this invention, the LED chip is mounted on the mounting substrate such that the LED thin film portion is closer to the mounting substrate than the transparent substrate, and the mounting substrate is disposed on one surface side of the translucent substrate and the cathode electrode of the LED chip and A conductor pattern to be bonded to each anode electrode via a bump is formed, and a reflective film that reflects light emitted from the LED chip to the mounting substrate side is formed on the other surface of the translucent substrate. The distance between the LED and the reflective film can be made relatively long, the amount of light incident on the LED chip that is emitted from the LED thin film part and reflected by the reflective film can be reduced, and the light extraction efficiency is improved. Therefore, the luminous efficiency can be improved.

請求項２の発明は、請求項１の発明において、前記実装基板は、前記導体パターンが透明導電膜により構成されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the mounting substrate is characterized in that the conductive pattern is formed of a transparent conductive film.

この発明によれば、前記導体パターンが金属層により構成されている場合に比べて、前記導体パターンによる光の反射や減衰を抑制できるので、光取り出し効率を向上できる。   According to this invention, since the reflection and attenuation of light by the conductor pattern can be suppressed as compared with the case where the conductor pattern is formed of a metal layer, the light extraction efficiency can be improved.

請求項３の発明は、請求項１または請求項２の発明において、前記ＬＥＤチップの前記ＬＥＤ薄膜部と前記実装基板との間の隙間に透光性樹脂からなるアンダーフィル部が設けられてなることを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, an underfill portion made of a translucent resin is provided in a gap between the LED thin film portion of the LED chip and the mounting substrate. It is characterized by that.

この発明によれば、前記ＬＥＤチップと前記実装基板との間の隙間に透光性樹脂からなるアンダーフィル部が設けられていることにより、前記ＬＥＤチップにおいて前記ＬＥＤ薄膜部から前記透明基体側とは反対側に放射される光が前記ＬＥＤ薄膜部の表面で反射されるのを抑制して効率良く取り出すことができ、光取り出し効率の向上を図れる。   According to the present invention, an underfill portion made of a translucent resin is provided in a gap between the LED chip and the mounting substrate, so that the LED chip has the LED thin film portion to the transparent substrate side. Can be efficiently extracted by suppressing the light emitted to the opposite side from being reflected on the surface of the LED thin film portion, and the light extraction efficiency can be improved.

請求項４の発明は、請求項１ないし請求項３の発明において、前記ＬＥＤチップは、前記透明基体が、前記一表面を下面とする六角錘状に形成されてなることを特徴とする。   According to a fourth aspect of the present invention, in the first to third aspects of the present invention, the LED chip is characterized in that the transparent substrate is formed in a hexagonal pyramid shape with the one surface as a lower surface.

この発明によれば、前記ＬＥＤチップの前記透明基体が六角錘状に形成されているので、前記透明基体が平板状に形成されている場合に比べて光取り出し効率を高めることができる。   According to this invention, since the transparent substrate of the LED chip is formed in a hexagonal pyramid shape, the light extraction efficiency can be increased compared to the case where the transparent substrate is formed in a flat plate shape.

請求項１の発明では、ＬＥＤ薄膜部と反射膜との距離を比較的長くすることができ、ＬＥＤ薄膜部から実装基板側へ放射され反射膜で反射される光のＬＥＤチップへの再入射量を低減でき、光取り出し効率が向上するから、発光効率の向上を図れるという効果がある。   In the invention of claim 1, the distance between the LED thin film portion and the reflective film can be made relatively long, and the amount of light incident on the LED chip that is emitted from the LED thin film portion to the mounting substrate side and reflected by the reflective film is reflected. Can be reduced, and the light extraction efficiency is improved, so that the light emission efficiency can be improved.

（実施形態１）
以下、本実施形態の発光装置について図１を参照しながら説明する。 (Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIG.

本実施形態の発光装置Ａは、図１に示すように、ＬＥＤチップ１０と、当該ＬＥＤチップ１０が一表面側に実装された矩形板状の実装基板２０とを備えている。   As shown in FIG. 1, the light emitting device A of the present embodiment includes an LED chip 10 and a rectangular plate-shaped mounting substrate 20 on which the LED chip 10 is mounted on one surface side.

ＬＥＤチップ１０は、青色光を放射するＧａＮ系の青色ＬＥＤチップであり、それぞれ窒化物半導体材料により形成されたｎ形半導体層１４と発光層１５とｐ形半導体層１６との積層構造を有するＬＥＤ薄膜部１２、ｎ形半導体層１４に電気的に接続されたカソード電極１８およびｐ形半導体層１６に電気的に接続されたアノード電極１７がｎ形のＺｎＯ結晶からなる六角錘状の透明基体１１の下面１１ａ側に形成されている。なお、本実施形態では、透明基体１１の下面１１ａが透明基体１１の一表面を構成している。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and an LED having a laminated structure of an n-type semiconductor layer 14, a light-emitting layer 15, and a p-type semiconductor layer 16 each formed of a nitride semiconductor material. The hexagonal pyramid-shaped transparent substrate 11 in which the thin film portion 12, the cathode electrode 18 electrically connected to the n-type semiconductor layer 14 and the anode electrode 17 electrically connected to the p-type semiconductor layer 16 are made of n-type ZnO crystals. It is formed on the lower surface 11a side. In the present embodiment, the lower surface 11 a of the transparent substrate 11 constitutes one surface of the transparent substrate 11.

ＬＥＤチップ１０のＬＥＤ薄膜部１２は、ｎ形半導体層１４をｎ形ＧａＮ層により構成し、発光層１５をＩｎＧａＮ層により構成し、ｐ形半導体層１６を発光層１５側のｐ形ＡｌＧａＮ層と当該ｐ形ＡｌＧａＮ層における発光層１５側とは反対側のｐ形ＧａＮ層とで構成してあるが、ＬＥＤ薄膜部１２の積層構造は特に限定するものではなく、発光層１５は単層構造に限らず、多重量子井戸構造ないし単一量子井戸構造でもよい。   The LED thin film portion 12 of the LED chip 10 includes an n-type semiconductor layer 14 formed of an n-type GaN layer, a light-emitting layer 15 formed of an InGaN layer, and a p-type semiconductor layer 16 formed of a p-type AlGaN layer on the light-emitting layer 15 side. The p-type AlGaN layer is composed of the p-type GaN layer opposite to the light-emitting layer 15 side, but the laminated structure of the LED thin film portion 12 is not particularly limited, and the light-emitting layer 15 has a single-layer structure. Not limited to this, a multiple quantum well structure or a single quantum well structure may be used.

また、ＬＥＤチップ１０は、ＬＥＤ薄膜部１２の平面視形状を透明基体１１の下面１１ａよりもやや小さな正六角形状の形状に形成してあり、カソード電極１８が、ＬＥＤ薄膜部１２のｎ形半導体層１４に接する形で形成されて当該ｎ形半導体層１４と電気的に接続され、アノード電極１７が透明基体１１の下面１１ａに接する形で形成され当該透明基体１１を介してｐ形半導体層１６と電気的に接続されている。したがって、ｎ形半導体層１４と発光層１５とｐ形半導体層１６との平面サイズを同じにすることができる。ここで、ＬＥＤチップ１０のアノード電極１７およびカソード電極１８は、下層側のＴｉ膜と上層側のＡｕ膜との積層膜により構成されている。ただし、アノード電極１７およびカソード電極１８それぞれの形状、サイズ、個数および配置は特に限定するものではない。   In addition, the LED chip 10 is formed in a regular hexagonal shape in which the LED thin film portion 12 in plan view is slightly smaller than the lower surface 11 a of the transparent substrate 11, and the cathode electrode 18 is an n-type semiconductor of the LED thin film portion 12. Formed in contact with the layer 14 and electrically connected to the n-type semiconductor layer 14, the anode electrode 17 is formed in contact with the lower surface 11 a of the transparent substrate 11, and the p-type semiconductor layer 16 is interposed through the transparent substrate 11. And are electrically connected. Therefore, the planar sizes of the n-type semiconductor layer 14, the light emitting layer 15, and the p-type semiconductor layer 16 can be made the same. Here, the anode electrode 17 and the cathode electrode 18 of the LED chip 10 are configured by a laminated film of a lower layer Ti film and an upper layer Au film. However, the shape, size, number and arrangement of the anode electrode 17 and the cathode electrode 18 are not particularly limited.

上述のＬＥＤチップ１０は、主表面がｃ面のサファイアウェハの主表面側に上記積層構造を有するＬＥＤ薄膜部１２をエピタキシャル成長法（例えば、ＭＯＶＰＥ法など）により成長し、その後、ＬＥＤ薄膜部１２を透明基体１１の基礎となるｎ形ＺｎＯウェハに接合してから、サファイアウェハを除去し、続いて、塩酸系のエッチング液（例えば、塩酸水溶液など）を用いてエッチング速度の結晶方位依存性を利用した異方性エッチングを行うことによりｎ形ＺｎＯウェハの一部からなる六角錘状の透明基体１１を形成している。なお、ｎ形ＺｎＯウェハとしては、水熱合成法を利用して製造したものを用いている。六角錘状の透明基体１１の高さは、ｎ形ＺｎＯウェハの厚さで規定することができ、本実施形態では、ｎ形ＺｎＯウェハとして厚さが５００μｍのものを用いているので、透明基体１１の高さは５００μｍとなっているが、ｎ形ＺｎＯウェハの厚さは特に限定するものではない。また、透明基体１１の下面１１ａに対する各斜面１１ｂそれぞれの傾斜角は、ｎ形ＺｎＯウェハの結晶軸方向で規定され、ｎ形ＺｎＯウェハにおいて透明基体１１の下面１１ａとなるＺｎ極性面である（０００１）面とは反対側のＯ極性面である（０００−１）面に適宜パターニングされたマスクを設けてｎ形ＺｎＯウェハをＯ極性面側から異方性エッチングすることにより透明基体１１を形成しているので、下面１１ａに対する各斜面１１ｂそれぞれの傾斜角が６０°となっている。   In the LED chip 10 described above, the LED thin film portion 12 having the above laminated structure is grown on the main surface side of the sapphire wafer whose main surface is c-plane by the epitaxial growth method (for example, MOVPE method). After bonding to the n-type ZnO wafer that is the basis of the transparent substrate 11, the sapphire wafer is removed, and then the crystal orientation dependence of the etching rate is utilized using a hydrochloric acid-based etching solution (for example, hydrochloric acid aqueous solution). By performing the anisotropic etching, the hexagonal pyramid-shaped transparent substrate 11 made of a part of the n-type ZnO wafer is formed. In addition, as an n-type ZnO wafer, what was manufactured using the hydrothermal synthesis method is used. The height of the hexagonal pyramidal transparent substrate 11 can be defined by the thickness of the n-type ZnO wafer. In this embodiment, the n-type ZnO wafer having a thickness of 500 μm is used. Although the height of 11 is 500 μm, the thickness of the n-type ZnO wafer is not particularly limited. In addition, the inclination angle of each inclined surface 11b with respect to the lower surface 11a of the transparent substrate 11 is defined in the crystal axis direction of the n-type ZnO wafer and is a Zn polar surface that becomes the lower surface 11a of the transparent substrate 11 in the n-type ZnO wafer (0001 The transparent base 11 is formed by anisotropically etching the n-type ZnO wafer from the O polar plane side by providing a mask appropriately patterned on the (000-1) plane which is the O polar plane opposite to the plane). Therefore, the inclination angle of each inclined surface 11b with respect to the lower surface 11a is 60 °.

また、ＬＥＤチップ１０は、ＬＥＤ薄膜部１２における透明基体１１側とは反対側の表面（ここでは、ｎ形半導体層１４の表面）に光取り出し効率向上用の微細凹凸構造１４ａが形成されている。   Further, in the LED chip 10, a fine concavo-convex structure 14 a for improving light extraction efficiency is formed on the surface of the LED thin film portion 12 opposite to the transparent substrate 11 (here, the surface of the n-type semiconductor layer 14). .

上述のＬＥＤチップ１０は、アノード電極１７とカソード電極１８との間に順方向バイアス電圧を印加することにより、トンネル電流注入によりアノード電極１７からｐ形半導体層１６へホールが注入されるとともに、カソード電極１８からｎ形半導体層１４へ電子が注入され、発光層１５に注入された電子とホールとが再結合することで発光し、透明基体１１の各斜面１１ｂおよびＬＥＤ薄膜部１２におけるｎ形半導体層１４の透明基体１１側とは反対側の表面から光が放射される。なお、波長が４５０ｎｍの光に対するＺｎＯの屈折率は２．１、ＧａＮの屈折率は２．４である。   In the LED chip 10 described above, by applying a forward bias voltage between the anode electrode 17 and the cathode electrode 18, holes are injected from the anode electrode 17 to the p-type semiconductor layer 16 by tunnel current injection, and the cathode Electrons are injected from the electrode 18 into the n-type semiconductor layer 14, and the electrons and holes injected into the light-emitting layer 15 recombine to emit light, and the n-type semiconductor in each inclined surface 11 b of the transparent substrate 11 and the LED thin film portion 12. Light is emitted from the surface of the layer 14 opposite to the transparent substrate 11 side. Note that the refractive index of ZnO for light having a wavelength of 450 nm is 2.1, and the refractive index of GaN is 2.4.

ところで、実装基板２０は、透光性基板２１の一表面側にＬＥＤチップ１０のカソード電極１８およびアノード電極１７それぞれとバンプ３０，３０を介して接合される導体パターン２３，２３が形成され、透光性基板２１の他表面にＬＥＤチップ１０から実装基板２０側に放射された光を反射する反射膜２５が形成されている。   By the way, the mounting substrate 20 has conductor patterns 23 and 23 formed on one surface side of the translucent substrate 21 and bonded to the cathode electrode 18 and the anode electrode 17 of the LED chip 10 via the bumps 30 and 30, respectively. A reflective film 25 that reflects light emitted from the LED chip 10 toward the mounting substrate 20 is formed on the other surface of the optical substrate 21.

要するに、ＬＥＤチップ１０は、透明基体１１よりもＬＥＤ薄膜部１２が実装基板２０に近くなる形で実装基板２０の上記一表面側に実装されている。なお、実装基板２０の平面視形状は、矩形状（本実施形態では、正方形状）となっているが、正方形状に限らず、例えば、長方形状、円形状、六角形状でもよい。   In short, the LED chip 10 is mounted on the one surface side of the mounting substrate 20 such that the LED thin film portion 12 is closer to the mounting substrate 20 than the transparent substrate 11. In addition, although the planar view shape of the mounting board | substrate 20 is a rectangular shape (this embodiment square shape), it is not restricted to a square shape, For example, a rectangular shape, circular shape, and hexagon shape may be sufficient.

ここにおいて、透光性基板２１の材料としては、例えば、パイレックス（登録商標）や硼珪酸ガラス（ＢＫ７）などのガラスを採用すればよいが、ガラスに限らず、ＬＥＤチップ１０から放射される光に対して透光性を有する材料であればよく、例えば、６Ｈ−ＳｉＣ、ＧａＮ、ＧａＰ、サファイアなどを採用してもよい。ただし、ＬＥＤチップ１０との線膨張係数差が小さく熱伝導率が大きな材料が好ましい。これらの材料の線膨張係数および熱伝導率を下記表１に示す。   Here, as a material of the translucent substrate 21, for example, glass such as Pyrex (registered trademark) or borosilicate glass (BK7) may be adopted, but not limited to glass, light emitted from the LED chip 10. For example, 6H—SiC, GaN, GaP, sapphire, or the like may be employed. However, a material having a small difference in linear expansion coefficient from the LED chip 10 and a high thermal conductivity is preferable. The linear expansion coefficient and thermal conductivity of these materials are shown in Table 1 below.

Figure 2010147191
Figure 2010147191

また、各導体パターン２３は、ＩＴＯ膜からなる透明導電膜により構成されているが、透明導電膜は、ＩＴＯ膜に限らず、例えば、ＧＺＯ（ＧａをドープしたＺｎＯ）膜、ＡＺＯ（ＡｌをドープしたＺｎＯ）膜、ＩＺＯ（ＩｎをドープしたＺｎＯ）膜などにより構成してもよい。   Each conductive pattern 23 is formed of a transparent conductive film made of an ITO film. However, the transparent conductive film is not limited to an ITO film, and may be, for example, a GZO (Ga-doped ZnO) film or an AZO (Al-doped). ZnO) film, IZO (In-doped ZnO) film, or the like.

また、反射膜２５は、Ａｌ膜により構成されているが、反射膜２５は、Ａｌ膜に限らず、例えば、例えば、Ａｇ膜により構成してもよい。   The reflective film 25 is made of an Al film, but the reflective film 25 is not limited to an Al film, and may be made of, for example, an Ag film.

以上説明した本実施形態の発光装置Ａによれば、ＬＥＤチップ１０は、透明基体１１よりもＬＥＤ薄膜部１２が実装基板２０に近くなる形で実装基板２０に実装され、実装基板２０は、透光性基板２１の上記一表面側にＬＥＤチップ１０のカソード電極１８およびアノード電極１７それぞれとバンプ３０，３０を介して接合される導体パターン２３，２３が形成され、透光性基板２１の上記他表面にＬＥＤチップ１０から実装基板２０側に放射された光を反射する反射膜２５が形成されているので、発光層１５と反射膜２５との距離を図３に示した従来構成に比べて長くでき、さらに、透光性基板２１の上記一表面に光反射膜２５を形成する場合に比べて、ＬＥＤ薄膜部１２と反射膜２５との距離を比較的長くすることができ、ＬＥＤ薄膜部１２から実装基板２０側へ放射され反射膜２５で反射される光のＬＥＤチップ１０への再入射量を低減でき、光取り出し効率が向上するから、発光効率の向上を図れる。しかして、本実施形態の発光装置Ａによれば、光出力の向上を図れる。なお、図１中の矢印は、ＬＥＤチップ１０から放射された光の進行経路を模式的に示している。   According to the light-emitting device A of the present embodiment described above, the LED chip 10 is mounted on the mounting substrate 20 such that the LED thin film portion 12 is closer to the mounting substrate 20 than the transparent substrate 11, and the mounting substrate 20 is transparent. Conductive patterns 23 and 23 are formed on the one surface side of the light-emitting substrate 21 and bonded to the cathode electrode 18 and the anode electrode 17 of the LED chip 10 via the bumps 30 and 30, respectively. Since the reflection film 25 for reflecting the light emitted from the LED chip 10 to the mounting substrate 20 side is formed on the surface, the distance between the light emitting layer 15 and the reflection film 25 is longer than the conventional configuration shown in FIG. In addition, the distance between the LED thin film portion 12 and the reflective film 25 can be made relatively long compared to the case where the light reflecting film 25 is formed on the one surface of the translucent substrate 21, and the LED thin film portion Emitted from 2 to the mounting substrate 20 side can be reduced again incident amount of the LED chips 10 of the light reflected by the reflective film 25, because the light extraction efficiency is improved, thereby improving the luminous efficiency. Therefore, according to the light emitting device A of the present embodiment, the light output can be improved. In addition, the arrow in FIG. 1 has shown typically the advancing path | route of the light radiated | emitted from LED chip 10. FIG.

また、本実施形態の発光装置Ａでは、実装基板２０の各導体パターン２３，２３が透明導電膜により構成されているので、図３に示した従来構成のように各導体パターン２３’，２３’が金属層により構成されている場合に比べて、各導体パターン２３，２３による光の反射や減衰を抑制できるので、光取り出し効率を向上できる。   Further, in the light emitting device A of the present embodiment, each conductor pattern 23, 23 of the mounting substrate 20 is made of a transparent conductive film, so that each conductor pattern 23 ', 23' as in the conventional configuration shown in FIG. Since the reflection and attenuation of light by the conductor patterns 23 and 23 can be suppressed as compared with the case where is formed of a metal layer, the light extraction efficiency can be improved.

また、本実施形態の発光装置Ａによれば、ＬＥＤチップ１０の透明基体１１が六角錘状に形成されているので、透明基体１１が平板状に形成されている場合に比べて光取り出し効率を高めることができる。ただし、透明基体１１を平板状の形状としてもよい。   Further, according to the light emitting device A of the present embodiment, since the transparent substrate 11 of the LED chip 10 is formed in a hexagonal pyramid shape, the light extraction efficiency is higher than that in the case where the transparent substrate 11 is formed in a flat plate shape. Can be increased. However, the transparent substrate 11 may have a flat plate shape.

（実施形態２）
図２に示す本実施形態の発光装置Ａの基本構成は実施形態１と略同じであり、ＬＥＤチップ１０と実装基板２０との間の隙間に透光性樹脂（例えば、シリコーン樹脂、エポキシ樹脂など）からなるアンダーフィル部４０が設けられている点が相違するだけである。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 2)
The basic configuration of the light emitting device A of the present embodiment shown in FIG. 2 is substantially the same as that of the first embodiment. The only difference is that the underfill portion 40 is provided. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態の発光装置Ａでは、ＬＥＤチップ１０と実装基板２０との間の隙間に透光性樹脂からなるアンダーフィル部４０が設けられているので、ＬＥＤチップ１０のアノード電極１７およびカソード電極１８と透光性基板２１の上記一表面側の導体パターン２３，２３との接続信頼性を高めることができ、しかも、ＬＥＤチップ１０においてＬＥＤ薄膜部１２から透明基体１１側とは反対側に放射される光（発光層１４から透明基体１１側とは反対側に放射される光）がＬＥＤ薄膜部１２の表面で反射されるのを抑制して効率良く取り出すことができ、光取り出し効率の向上を図れる。   In the light emitting device A of the present embodiment, since the underfill portion 40 made of a translucent resin is provided in the gap between the LED chip 10 and the mounting substrate 20, the anode electrode 17 and the cathode electrode 18 of the LED chip 10. And the conductive pattern 23, 23 on the one surface side of the translucent substrate 21 can be improved, and the LED chip 10 is radiated from the LED thin film portion 12 to the side opposite to the transparent substrate 11 side. Light (light emitted from the light emitting layer 14 to the side opposite to the transparent substrate 11 side) can be efficiently extracted by suppressing the reflection on the surface of the LED thin film portion 12, and the light extraction efficiency can be improved. I can plan.

なお、上述の各実施形態では、ＬＥＤチップ１０の発光色を青色光としてあるが、ＬＥＤチップ１０の発光色は青色光に限らず、緑色光、赤色光、紫色光、紫外光などでもよい。また、ｎ形半導体層１４、発光層１５、およびｐ形半導体層１６の材料は窒化物半導体材料に限定するものではなく、他の化合物半導体材料でもよい。また、ＬＥＤ薄膜部１２は、少なくともｎ形半導体層１４とｐ形半導体層１６とを備えていればよく、発光層１５は必ずしも備えている必要はない。   In each of the embodiments described above, the emission color of the LED chip 10 is blue light, but the emission color of the LED chip 10 is not limited to blue light, and may be green light, red light, purple light, ultraviolet light, or the like. The materials of the n-type semiconductor layer 14, the light emitting layer 15, and the p-type semiconductor layer 16 are not limited to nitride semiconductor materials, and may be other compound semiconductor materials. Moreover, the LED thin film part 12 should just be provided with the n-type semiconductor layer 14 and the p-type semiconductor layer 16 at least, and the light emitting layer 15 does not necessarily need to be provided.

また、上記各実施形態の発光装置Ａにおいて、ＬＥＤチップ１０から放射される光によって励起されてＬＥＤチップ１０よりも長波長の光を放射する蛍光体を含有した透光性材料により形成され実装基板２０との間にＬＥＤチップ１０を囲む形で実装基板２０の上記一表面側に固着されるドーム状の色変換部材（図示せず）を設けるようにしてもよい。この場合の上記色変換部材の材料として用いる透光性材料として、例えば、シリコーン樹脂を用いればよいが、シリコーン樹脂に限らず、例えば、アクリル樹脂、ガラス、有機成分と無機成分とがｎｍレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよく、ガラスを採用すれば、シリコーン樹脂を採用している場合に比べて、上記色変換部材の熱伝導性が向上するので、蛍光体の温度上昇をより抑制できて光束を向上させることができ、しかも、水蒸気やＮＯｘなど対するガスバリア性や耐透湿性が向上するとともに、蛍光体の吸湿劣化を抑制でき、信頼性および耐久性が向上する。また、上記色変換部材の材料として用いる透光性材料に混合する蛍光体として黄色蛍光体を採用しているが、黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。 Further, in the light emitting device A of each of the above embodiments, the mounting substrate is formed of a translucent material containing a phosphor that is excited by light emitted from the LED chip 10 and emits light having a longer wavelength than the LED chip 10. A dome-shaped color conversion member (not shown) that is fixed to the one surface side of the mounting substrate 20 so as to surround the LED chip 10 may be provided. As a translucent material used as the material of the color conversion member in this case, for example, a silicone resin may be used, but not limited to a silicone resin, for example, an acrylic resin, glass, an organic component and an inorganic component are on the nm level or Organic / inorganic hybrid materials mixed and bonded at the molecular level may be used. If glass is used, the thermal conductivity of the color conversion member will be improved compared to the case of using a silicone resin. In addition, the temperature rise of the phosphor can be further suppressed, the luminous flux can be improved, and the gas barrier property and moisture permeability resistance against water vapor and NO x can be improved, and the moisture absorption deterioration of the phosphor can be suppressed, and the reliability and Durability is improved. In addition, a yellow phosphor is adopted as a phosphor to be mixed with a light-transmitting material used as the material of the color conversion member. However, the phosphor is not limited to the yellow phosphor, and for example, a red phosphor and a green phosphor are mixed. Even white light can be obtained.

実施形態１の発光装置を示す概略断面図である。1 is a schematic cross-sectional view showing a light emitting device of Embodiment 1. FIG. 実施形態２の発光装置を示す概略断面図である。6 is a schematic cross-sectional view showing a light emitting device of Embodiment 2. FIG. 従来例を示す発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device which shows a prior art example.

符号の説明Explanation of symbols

１０ ＬＥＤチップ
１１ 透明基体
１１ａ 下面（一表面）
１２ ＬＥＤ薄膜部
１４ ｎ形半導体層
１６ ｐ形半導体層
１７ アノード電極
１８ カソード電極
２０ 実装基板
２１ 透光性基板
２３ 導体パターン
２５ 反射膜
３０ バンプ
４０ アンダーフィル部 10 LED chip 11 Transparent substrate 11a Lower surface (one surface)
DESCRIPTION OF SYMBOLS 12 LED thin film part 14 n-type semiconductor layer 16 p-type semiconductor layer 17 Anode electrode 18 Cathode electrode 20 Mounting board 21 Translucent board 23 Conductive pattern 25 Reflective film 30 Bump 40 Underfill part

Claims (4)

ＬＥＤチップと、当該ＬＥＤチップが実装された実装基板とを備え、ＬＥＤチップは、ｎ形半導体層とｐ形半導体層とを有するＬＥＤ薄膜部、ｎ形半導体層に電気的に接続されたカソード電極およびｐ形半導体層に電気的に接続されたアノード電極が透明基体の一表面側に形成され、当該透明基体よりもＬＥＤ薄膜部が実装基板に近くなる形で実装基板に実装されてなり、実装基板は、透光性基板の一表面側にＬＥＤチップのカソード電極およびアノード電極それぞれとバンプを介して接合される導体パターンが形成され、透光性基板の他表面にＬＥＤチップから実装基板側に放射された光を反射する反射膜が形成されてなることを特徴とする発光装置。   An LED chip comprising an LED chip and a mounting substrate on which the LED chip is mounted, the LED chip having an n-type semiconductor layer and a p-type semiconductor layer, and a cathode electrode electrically connected to the n-type semiconductor layer And an anode electrode electrically connected to the p-type semiconductor layer is formed on one surface side of the transparent substrate, and the LED thin film portion is mounted on the mounting substrate closer to the mounting substrate than the transparent substrate. In the substrate, a conductor pattern bonded to each of the cathode electrode and the anode electrode of the LED chip via bumps is formed on one surface side of the translucent substrate, and from the LED chip to the mounting substrate side on the other surface of the translucent substrate. A light-emitting device comprising a reflective film that reflects emitted light. 前記実装基板は、前記導体パターンが透明導電膜により構成されてなることを特徴とする請求項１記載の発光装置。   The light emitting device according to claim 1, wherein the mounting substrate is configured such that the conductive pattern is made of a transparent conductive film. 前記ＬＥＤチップと前記実装基板との間の隙間に透光性樹脂からなるアンダーフィル部が設けられてなることを特徴とする請求項１または請求項２記載の発光装置。   The light emitting device according to claim 1, wherein an underfill portion made of a translucent resin is provided in a gap between the LED chip and the mounting substrate. 前記ＬＥＤチップは、前記透明基体が、前記一表面を下面とする六角錘状に形成されてなることを特徴とする請求項１ないし請求項３のいずれか１項に記載の発光装置。   The light emitting device according to any one of claims 1 to 3, wherein the LED chip is formed such that the transparent substrate has a hexagonal pyramid shape with the one surface as a lower surface.
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