JP2010147190A - Double-sided light-emitting device - Google Patents

Double-sided light-emitting device Download PDF

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JP2010147190A
JP2010147190A JP2008321511A JP2008321511A JP2010147190A JP 2010147190 A JP2010147190 A JP 2010147190A JP 2008321511 A JP2008321511 A JP 2008321511A JP 2008321511 A JP2008321511 A JP 2008321511A JP 2010147190 A JP2010147190 A JP 2010147190A
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transparent substrate
visible light
led chip
light led
transparent
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Yoji Urano
洋二 浦野
Akihiko Murai
章彦 村井
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Panasonic Electric Works Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a double-sided light-emitting device for preventing a shadow from occurring in lighting, reducing irregularities in luminance, and improving outward appearance in lights-out. <P>SOLUTION: The double-sided light-emitting device includes: a plurality of first visible light LED chips 1 packaged at one surface side of a first transparent substrate 61; and a plurality of second visible light LED chips 1 packaged at one surface side of a second transparent substrate 62. In the respective visible light LED chips 1, an LED thin-film section 2, an anode electrode 4, and a cathode electrode 5 made of a nitride semiconductor material are formed at the side of a lower surface 31 of a pyramid 3 made of a ZnO crystal in a hexagonal weight shape, the anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 are joined to first transparent electrodes 71, 71 at one surface side of the first transparent substrate 61 via bumps 14, 15, and the anode electrode 4 and the cathode electrode 5 of the second visible light LED chip 1 are joined to second transparent electrodes 72, 72 at one surface side of the second transparent electrode 62 via the bumps 14, 15. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、可視光ＬＥＤチップを用いた両面発光デバイスに関するものである。   The present invention relates to a double-sided light emitting device using a visible light LED chip.

この種の両面発光デバイスとして、図２に示すように、第１の透明基板６１と、第１の透明基板６１の一表面側に実装された複数の第１の可視光ＬＥＤチップ１’と、第１の透明基板６１の上記一表面側に設けられ複数の第１の可視光ＬＥＤチップ１’へ給電するための第１の透明電極７１と、第１の透明基板６１の上記一表面側に対向配置された第２の透明基板６２と、第２の透明基板６２における第１の透明基板６１との対向面である一表面側に実装された複数の第２の可視光ＬＥＤチップ１’と、第２の透明基板６２の上記一表面側に設けられ複数の第２の可視光ＬＥＤチップ１’へ給電するための第２の透明電極７２とを備えものが提案されている（例えば、特許文献１参照）。   As this type of double-sided light emitting device, as shown in FIG. 2, a first transparent substrate 61 and a plurality of first visible light LED chips 1 ′ mounted on one surface side of the first transparent substrate 61, A first transparent electrode 71 provided on the one surface side of the first transparent substrate 61 for supplying power to the plurality of first visible light LED chips 1 ′, and on the one surface side of the first transparent substrate 61. A plurality of second visible light LED chips 1 ′ mounted on one surface side, which is a surface facing the first transparent substrate 61 in the second transparent substrate 62, and the second transparent substrate 62 disposed to face the second transparent substrate 62; And a second transparent electrode 72 that is provided on the one surface side of the second transparent substrate 62 and supplies power to the plurality of second visible light LED chips 1 ′ has been proposed (for example, patents). Reference 1).

図２に示した構成の両面発光デバイスでは、第１の透明基板６１に実装された第１の可視光ＬＥＤチップ１’から放射される光を第２の透明電極７２および第２の透明基板６２を通して外部へ出射することができるとともに、第２の透明基板６２に実装された第２の可視光ＬＥＤチップ１’から放射される光を第１の透明電極７１および第１の透明基板７２を通して外部へ出射することができる。
特開平１１−１６２２３３号公報（段落〔００２９〕−〔００３０〕、および図１０） In the double-sided light emitting device having the configuration shown in FIG. 2, the light emitted from the first visible light LED chip 1 ′ mounted on the first transparent substrate 61 is transmitted to the second transparent electrode 72 and the second transparent substrate 62. The light emitted from the second visible light LED chip 1 ′ mounted on the second transparent substrate 62 can be emitted through the first transparent electrode 71 and the first transparent substrate 72 to the outside. Can be emitted.
JP-A-11-162233 (paragraphs [0029]-[0030] and FIG. 10)

ところで、図２に示した構成の両面発光デバイスでは、各ＬＥＤ可視光ＬＥＤチップ１’として平板状の赤色ＬＥＤチップもしくは緑色ＬＥＤチップもしくは青色ＬＥＤチップが用いられており、点灯時に、第１の透明基板６１の他表面側において第１の可視光ＬＥＤチップ１’が影になって輝度むらが大きくなるとともに、第２の透明基板６２の他表面側において第２の可視光ＬＥＤチップ１’が影になって輝度むらが大きくなってしまう。また、図２に示した構成の両面発光デバイスでは、消灯時に、各可視光ＬＥＤチップ１’が目立ってしまい見栄えが良くなかった。   By the way, in the double-sided light emitting device having the configuration shown in FIG. 2, a flat red LED chip, green LED chip, or blue LED chip is used as each LED visible light LED chip 1 ′. The first visible light LED chip 1 ′ becomes a shadow on the other surface side of the substrate 61 and the luminance unevenness increases, and the second visible light LED chip 1 ′ on the other surface side of the second transparent substrate 62 shadows. As a result, the luminance unevenness increases. Further, in the double-sided light emitting device having the configuration shown in FIG. 2, each visible light LED chip 1 ′ is conspicuous at the time of turning off, and the appearance is not good.

本発明は上記事由に鑑みて為されたものであり、その目的は、点灯時の影の発生を防止できるとともに輝度むらを低減でき且つ消灯時の見栄えを良くすることが可能な両面発光デバイスを提供することにある。   The present invention has been made in view of the above-described reasons, and an object of the present invention is to provide a double-sided light emitting device that can prevent the occurrence of shadows when turned on, reduce unevenness in brightness, and improve the appearance when turned off. It is to provide.

請求項１の発明は、第１の透明基板と、第１の透明基板の一表面側に実装された複数の第１の可視光ＬＥＤチップと、第１の透明基板の前記一表面側に設けられ複数の第１の可視光ＬＥＤチップへ給電するための第１の透明電極と、第１の透明基板の前記一表面側に対向配置された第２の透明基板と、第２の透明基板における第１の透明基板との対向面である一表面側に実装された複数の第２の可視光ＬＥＤチップと、第２の透明基板の前記一表面側に設けられ複数の第２の可視光ＬＥＤチップへ給電するための第２の透明電極とを備え、各可視光ＬＥＤチップは、六角錘状のＺｎＯ結晶からなる錐体の下面側に、窒化物半導体材料からなるＬＥＤ薄膜部、アノード電極およびカソード電極が形成されてなり、第１の可視光ＬＥＤチップのアノード電極およびカソード電極それぞれがバンプを介して第１の透明電極と接合され、第２の可視光ＬＥＤチップのアノード電極およびカソード電極それぞれがバンプを介して第２の透明電極と接合されてなることを特徴とする。   The invention of claim 1 is provided on the one surface side of the first transparent substrate, the plurality of first visible light LED chips mounted on the one surface side of the first transparent substrate, and the first transparent substrate. A first transparent electrode for supplying power to the plurality of first visible light LED chips, a second transparent substrate disposed opposite to the one surface side of the first transparent substrate, and a second transparent substrate. A plurality of second visible light LED chips mounted on one surface side that is a surface facing the first transparent substrate, and a plurality of second visible light LEDs provided on the one surface side of the second transparent substrate. A second transparent electrode for supplying power to the chip, and each visible light LED chip has an LED thin film portion made of a nitride semiconductor material, an anode electrode, and an underside of a cone made of a hexagonal pyramidal ZnO crystal A cathode electrode is formed, and the first visible light LED chip has an anode. Each of the cathode electrode and the cathode electrode is joined to the first transparent electrode via the bump, and each of the anode electrode and the cathode electrode of the second visible light LED chip is joined to the second transparent electrode via the bump. It is characterized by that.

この発明によれば、各可視光ＬＥＤチップは、六角錘状のＺｎＯ結晶からなる錐体の下面側に、窒化物半導体材料からなるＬＥＤ薄膜部、アノード電極およびカソード電極が形成されてなり、第１の可視光ＬＥＤチップのアノード電極およびカソード電極それぞれがバンプを介して第１の透明電極と接合され、第２の可視光ＬＥＤチップのアノード電極およびカソード電極それぞれがバンプを介して第２の透明電極と接合されているので、点灯時に、各可視光ＬＥＤチップにおける錐体の各斜面およびＬＥＤ薄膜部の表面それぞれから光が放射されることとなるから、点灯時の影の発生を防止できるとともに輝度むらを低減でき、また、各可視光ＬＥＤチップの錐体がＺｎＯ結晶により構成されており透明なので、消灯時に各可視光ＬＥＤチップが目立たず、消灯時の見栄えを良くすることが可能となる。   According to this invention, each visible light LED chip has an LED thin film portion made of a nitride semiconductor material, an anode electrode, and a cathode electrode formed on the lower surface side of a pyramid made of hexagonal pyramidal ZnO crystals. Each of the anode electrode and the cathode electrode of the first visible light LED chip is joined to the first transparent electrode via the bump, and each of the anode electrode and the cathode electrode of the second visible light LED chip is connected to the second transparent electrode via the bump. Since it is joined to the electrodes, light is emitted from each slope of the cone in each visible light LED chip and the surface of the LED thin film portion at the time of lighting. The brightness unevenness can be reduced, and the cone of each visible light LED chip is made of ZnO crystal and is transparent, so that each visible light LED chip is turned off when turned off. Flop is not conspicuous, it is possible to improve the appearance of the time off.

請求項２の発明は、請求項１の発明において、前記第１の可視光ＬＥＤチップの前記ＬＥＤ薄膜部における前記第１の透明基板側の表面に光取り出し効率向上用の微細凹凸構造が形成されてなり、前記第２の可視光ＬＥＤチップの前記ＬＥＤ薄膜部における前記第２の透明基板側の表面に光取り出し効率向上用の微細凹凸構造が形成されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, a fine concavo-convex structure for improving light extraction efficiency is formed on a surface of the LED thin film portion of the first visible light LED chip on the first transparent substrate side. Thus, a fine concavo-convex structure for improving light extraction efficiency is formed on the surface on the second transparent substrate side of the LED thin film portion of the second visible light LED chip.

この発明によれば、前記各可視光ＬＥＤチップそれぞれにおける前記ＬＥＤ薄膜部の前記錐体側とは反対側の表面に光取り出し効率向上用の微細凹凸構造が形成されていることにより、前記各可視光ＬＥＤチップにおいて前記ＬＥＤ薄膜部から前記錐体側とは反対側に放射される光が前記ＬＥＤ薄膜部の表面で反射されるのを抑制して効率良く取り出すことができ、点灯時の輝度むらをより低減できるとともに、光取り出し効率の向上を図れる。   According to the present invention, each of the visible light LED chips has a fine concavo-convex structure for improving light extraction efficiency formed on the surface of the LED thin film portion on the side opposite to the cone side. In the LED chip, the light emitted from the LED thin film portion to the side opposite to the cone side can be efficiently taken out by suppressing the light reflected from the surface of the LED thin film portion, and the luminance unevenness at the time of lighting can be further increased. It can be reduced and the light extraction efficiency can be improved.

請求項３の発明は、請求項１または請求項２の発明において、前記第１の可視光ＬＥＤチップと前記第１の透明基板との間の隙間に第１の透光性樹脂からなる第１のアンダーフィル部が設けられ、前記第２の可視光ＬＥＤチップと前記第２の透明基板との間の隙間に第２の透光性樹脂からなる第２のアンダーフィル部が設けられてなることを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, a first transparent resin is formed in a gap between the first visible light LED chip and the first transparent substrate. An underfill portion, and a second underfill portion made of a second translucent resin is provided in a gap between the second visible light LED chip and the second transparent substrate. It is characterized by.

この発明によれば、前記各可視光ＬＥＤチップそれぞれにおける前記ＬＥＤ薄膜部の前記錐体側とは反対側の表面側に各アンダーフィル部が設けられていることにより、前記各可視光ＬＥＤチップにおいて前記ＬＥＤ薄膜部から前記錐体側とは反対側に放射される光が前記ＬＥＤ薄膜部の表面で反射されるのを抑制して効率良く取り出すことができ、点灯時の輝度むらをより低減できるとともに、光取り出し効率の向上を図れる。   According to the present invention, each underfill portion is provided on the surface side of the LED thin film portion opposite to the cone side in each visible light LED chip. The light emitted from the LED thin film portion to the side opposite to the cone side can be efficiently taken out by suppressing the light reflected from the surface of the LED thin film portion, and the brightness unevenness during lighting can be further reduced. The light extraction efficiency can be improved.

請求項４の発明は、請求項１ないし請求項３の発明において、前記第１の透明基板と前記第２の透明基板とを保持する保持枠を備え、前記第１の透明基板と前記第２の透明基板と保持枠とで囲まれる空間が真空雰囲気もしくはドライエア雰囲気であり、保持枠に前記第１の可視光ＬＥＤチップおよび前記第２の可視光ＬＥＤチップへの給電用の二次電池が設けられるとともに、当該二次電池を充電可能な太陽電池が設けられてなることを特徴とすることを特徴とする。   According to a fourth aspect of the present invention, in the first to third aspects of the present invention, a holding frame that holds the first transparent substrate and the second transparent substrate is provided, and the first transparent substrate and the second transparent substrate are provided. The space surrounded by the transparent substrate and the holding frame is a vacuum atmosphere or a dry air atmosphere, and the holding frame is provided with a secondary battery for supplying power to the first visible light LED chip and the second visible light LED chip. And a solar cell capable of charging the secondary battery is provided.

この発明によれば、前記第１の透明基板と前記第２の透明基板と保持枠とで囲まれる空間が真空雰囲気もしくはドライエア雰囲気となっていることにより、前記第１の透明基板と前記第２の透明基板と保持枠とで囲まれた空間内で結露によるショートが発生するのを防止することができ、また、保持枠に前記第１の可視光ＬＥＤチップおよび前記第２の可視光ＬＥＤチップへの給電用の二次電池が設けられるとともに、当該二次電池を充電可能な太陽電池が設けられていることにより、別途に電源を設ける必要がなく設置場所の自由度が高くなるとともに、二次電池によって前記第１の透明基板および前記第２の透明基板の一部が覆われて影になるのを防止することができる。   According to this invention, since the space surrounded by the first transparent substrate, the second transparent substrate, and the holding frame is a vacuum atmosphere or a dry air atmosphere, the first transparent substrate and the second transparent substrate. In the space surrounded by the transparent substrate and the holding frame can be prevented, and the first visible light LED chip and the second visible light LED chip are formed on the holding frame. In addition to providing a secondary battery for supplying power to the battery, and a solar battery capable of charging the secondary battery, there is no need to provide a separate power source, and the degree of freedom in installation location is increased. The secondary battery can prevent a part of the first transparent substrate and the second transparent substrate from being covered with shadows.

請求項１の発明では、点灯時の影の発生を防止できるとともに輝度むらを低減でき且つ消灯時の見栄えを良くすることが可能になるという効果がある。   According to the first aspect of the present invention, it is possible to prevent the occurrence of shadows at the time of lighting, reduce luminance unevenness, and improve the appearance at the time of turning off.

以下、本実施形態の両面発光デバイスについて図１を参照しながら説明する。   Hereinafter, the double-sided light emitting device of this embodiment will be described with reference to FIG.

本実施形態の両面発光デバイスは、第１の透明基板６１と、第１の透明基板６１の一表面側に実装された複数の第１の可視光ＬＥＤチップ１と、第１の透明基板６１の上記一表面側に設けられ複数の第１の可視光ＬＥＤチップ１へ給電するための第１の透明電極７１と、第１の透明基板６１の上記一表面側に対向配置された第２の透明基板６２と、第２の透明基板６２における第１の透明基板６１との対向面である一表面側に実装された複数の第２の可視光ＬＥＤチップ１と、第２の透明基板６２の上記一表面側に設けられ複数の第２の可視光ＬＥＤチップ１へ給電するための第２の透明電極７２とを備えている。   The double-sided light emitting device of this embodiment includes a first transparent substrate 61, a plurality of first visible light LED chips 1 mounted on one surface side of the first transparent substrate 61, and the first transparent substrate 61. A first transparent electrode 71 provided on the one surface side for supplying power to the plurality of first visible light LED chips 1 and a second transparent electrode disposed opposite to the one surface side of the first transparent substrate 61. A plurality of second visible light LED chips 1 mounted on one surface side that is a surface of the second transparent substrate 62 facing the first transparent substrate 61, and the second transparent substrate 62 described above. And a second transparent electrode 72 provided on one surface side for supplying power to the plurality of second visible light LED chips 1.

また、本実施形態の両面発光デバイスは、第１の透明基板６１と第２の透明基板とを保持する保持枠６を備え、第１の透明基板６１と第２の透明基板６２と保持枠６とで囲まれる空間をドライエア雰囲気としてあるが、当該空間はドライエア雰囲気に限らず、真空雰囲気としてもよいし、Ｎ２ガス雰囲気としてもよい。ここで、第１の透明基板６１と第２の透明基板６２と保持枠６とで囲まれる空間がドライエア雰囲気もしくは真空雰囲気もしくはＮ２ガス雰囲気となっていることにより、第１の透明基板６１と第２の透明基板６２と保持枠６とで囲まれた空間内で結露によるショートが発生するのを防止することができる。 Further, the double-sided light emitting device of the present embodiment includes a holding frame 6 that holds the first transparent substrate 61 and the second transparent substrate, and the first transparent substrate 61, the second transparent substrate 62, and the holding frame 6. Is a dry air atmosphere, but the space is not limited to a dry air atmosphere, and may be a vacuum atmosphere or an N 2 gas atmosphere. Here, since the space surrounded by the first transparent substrate 61, the second transparent substrate 62, and the holding frame 6 is a dry air atmosphere, a vacuum atmosphere, or an N 2 gas atmosphere, the first transparent substrate 61, It is possible to prevent a short circuit due to condensation in the space surrounded by the second transparent substrate 62 and the holding frame 6.

上述の保持枠６には、第１の可視光ＬＥＤチップ１および第２の可視光ＬＥＤチップ１への給電用の二次電池８が設けられるとともに、当該二次電池８を充電可能な太陽電池７が設けられている。しかして、本実施形態の両面発光デバイスでは、別途に電源を設ける必要がなく設置場所の自由度が高くなるとともに、二次電池８によって第１の透明基板６１および第２の透明基板６２の一部が覆われて影になるのを防止することができる。   The holding frame 6 is provided with a secondary battery 8 for supplying power to the first visible light LED chip 1 and the second visible light LED chip 1 and a solar battery capable of charging the secondary battery 8. 7 is provided. Therefore, in the double-sided light emitting device of this embodiment, it is not necessary to separately provide a power source, and the degree of freedom of installation location is increased, and the secondary battery 8 uses the first transparent substrate 61 and the second transparent substrate 62 to provide It is possible to prevent the portion from being covered and becoming a shadow.

ここにおいて、第１の透明基板６１および第２の透明基板６２は、矩形板状のガラス基板により構成されている。なお、各透明基板６１，６２に用いるガラス基板の材料としては、例えば、パイレックス（登録商標）や硼珪酸ガラス（ＢＫ７）などを採用すればよい。なお、パイレックス（登録商標）の線膨張係数は３．２５×１０−６Ｋ−１程度、硼珪酸ガラスの線膨張係数は８．３×１０−６Ｋ−１程度である。 Here, the 1st transparent substrate 61 and the 2nd transparent substrate 62 are comprised by the rectangular-plate-shaped glass substrate. In addition, as a material of the glass substrate used for each of the transparent substrates 61 and 62, for example, Pyrex (registered trademark) or borosilicate glass (BK7) may be employed. Pyrex (registered trademark) has a linear expansion coefficient of about 3.25 × 10 −6 K −1 , and borosilicate glass has a linear expansion coefficient of about 8.3 × 10 −6 K −1 .

また、第１の透明電極７１および第２の透明電極７２は、ＩＴＯ膜からなる透明導電膜により構成されているが、透明導電膜は、ＩＴＯ膜に限らず、例えば、ＧＺＯ（ＧａをドープしたＺｎＯ）膜、ＡＺＯ（ＡｌをドープしたＺｎＯ）膜、ＩＺＯ（ＩｎをドープしたＺｎＯ）膜などにより構成してもよい。   Moreover, although the 1st transparent electrode 71 and the 2nd transparent electrode 72 are comprised by the transparent conductive film which consists of ITO film | membranes, a transparent conductive film is not restricted to an ITO film | membrane, For example, it doped GZO (Ga was doped A ZnO) film, an AZO (Al-doped ZnO) film, an IZO (In-doped ZnO) film, or the like may be used.

また、第１の可視光ＬＥＤチップ１と第２の可視光ＬＥＤチップ１とは同じ仕様のものを用いている。ここにおいて、可視光ＬＥＤチップ１は、青色光を放射するＧａＮ系の青色ＬＥＤチップであり、ｎ形窒化物半導体層２２と発光層２３とｐ形窒化物半導体層２４との積層構造を有するＬＥＤ薄膜部２、ｎ形窒化物半導体層２２に電気的に接続されたカソード電極５およびｐ形窒化物半導体層２２に電気的に接続されたアノード電極４がｎ形のＺｎＯ結晶からなる六角錘状の錐体３の下面３１側に形成されている。   The first visible light LED chip 1 and the second visible light LED chip 1 have the same specifications. Here, the visible light LED chip 1 is a GaN-based blue LED chip that emits blue light, and has a stacked structure of an n-type nitride semiconductor layer 22, a light emitting layer 23, and a p-type nitride semiconductor layer 24. The thin film portion 2, the cathode electrode 5 electrically connected to the n-type nitride semiconductor layer 22 and the anode electrode 4 electrically connected to the p-type nitride semiconductor layer 22 are hexagonal pyramids made of n-type ZnO crystals. It is formed on the lower surface 31 side of the cone 3.

可視光ＬＥＤチップ１のＬＥＤ薄膜部２は、ｎ形窒化物半導体層２２をｎ形ＧａＮ層により構成し、発光層２３をＩｎＧａＮ層により構成し、ｐ形窒化物半導体層２４を発光層２３側のｐ形ＡｌＧａＮ層と当該ｐ形ＡｌＧａＮ層における発光層２３側とは反対側のｐ形ＧａＮ層とで構成してあるが、ＬＥＤ薄膜部２の積層構造は特に限定するものではなく、発光層２３は単層構造に限らず、多重量子井戸構造ないし単一量子井戸構造でもよい。   In the LED thin film portion 2 of the visible light LED chip 1, the n-type nitride semiconductor layer 22 is composed of an n-type GaN layer, the light emitting layer 23 is composed of an InGaN layer, and the p-type nitride semiconductor layer 24 is disposed on the light emitting layer 23 side. The p-type AlGaN layer and the p-type GaN layer on the opposite side of the p-type AlGaN layer to the light-emitting layer 23 side are not particularly limited. 23 is not limited to a single layer structure, but may be a multiple quantum well structure or a single quantum well structure.

また、可視光ＬＥＤチップ１は、ＬＥＤ薄膜部２の平面視形状を錐体３の下面３１よりもやや小さな正六角形状の形状に形成してあり、カソード電極５が、ＬＥＤ薄膜部２のｎ形窒化物半導体層２２に接する形で形成されて当該ｎ形窒化物半導体層２２と電気的に接続され、アノード電極４が錐体３の下面３１に接する形で形成され当該錐体３を介してｐ形窒化物半導体層２４と電気的に接続されている。したがって、ｎ形窒化物半導体層２２と発光層２３とｐ形窒化物半導体層２４との平面サイズを同じにすることができる。ここで、可視光ＬＥＤチップ１のアノード電極４およびカソード電極５は、下層側のＴｉ膜と上層側のＡｕ膜との積層膜により構成されている。ただし、アノード電極４およびカソード電極５それぞれの形状、サイズ、個数および配置は特に限定するものではない。   In the visible light LED chip 1, the shape of the LED thin film portion 2 in a plan view is formed in a regular hexagonal shape slightly smaller than the lower surface 31 of the cone 3, and the cathode electrode 5 is n of the LED thin film portion 2. The n-type nitride semiconductor layer 22 is formed in contact with the n-type nitride semiconductor layer 22 and is electrically connected to the n-type nitride semiconductor layer 22, and the anode electrode 4 is formed in contact with the lower surface 31 of the cone 3. The p-type nitride semiconductor layer 24 is electrically connected. Therefore, the n-type nitride semiconductor layer 22, the light emitting layer 23, and the p-type nitride semiconductor layer 24 can have the same planar size. Here, the anode electrode 4 and the cathode electrode 5 of the visible light LED chip 1 are formed of a laminated film of a lower layer Ti film and an upper layer Au film. However, the shape, size, number and arrangement of the anode electrode 4 and the cathode electrode 5 are not particularly limited.

上述の可視光ＬＥＤチップ１は、主表面がｃ面のサファイアウェハの主表面側に上記積層構造を有するＬＥＤ薄膜部２をエピタキシャル成長法（例えば、ＭＯＶＰＥ法など）により成長し、その後、ＬＥＤ薄膜部２を錐体３の基礎となるｎ形ＺｎＯウェハに接合してから、サファイアウェハを除去し、続いて、塩酸系のエッチング液（例えば、塩酸水溶液など）を用いてエッチング速度の結晶方位依存性を利用した異方性エッチングを行うことによりｎ形ＺｎＯウェハの一部からなる六角錘状の錐体３を形成している。なお、ｎ形ＺｎＯウェハとしては、水熱合成法を利用して製造したものを用いている。錐体３の高さは、ｎ形ＺｎＯウェハの厚さで規定することができ、本実施形態では、ｎ形ＺｎＯウェハとして厚さが５００μｍのものを用いているので、錐体３の高さは５００μｍとなっているが、ｎ形ＺｎＯウェハの厚さは特に限定するものではない。また、錐体３の下面３１に対する各斜面３３それぞれの傾斜角は、ｎ形ＺｎＯウェハの結晶軸方向で規定され、ｎ形ＺｎＯウェハにおいて錘体３の下面３１となるＺｎ極性面である（０００１）面とは反対側のＯ極性面である（０００−１）面に適宜パターニングされたマスクを設けてｎ形ＺｎＯウェハをＯ極性面側から異方性エッチングすることにより錐体３を形成しているので、下面３１に対する各斜面３３それぞれの傾斜角が６０°となっている。   In the visible light LED chip 1 described above, the LED thin film portion 2 having the above laminated structure is grown on the main surface side of the sapphire wafer whose main surface is c-plane by the epitaxial growth method (for example, MOVPE method), and then the LED thin film portion. 2 is bonded to the n-type ZnO wafer on which the cone 3 is based, and then the sapphire wafer is removed, and then the crystal orientation dependence of the etching rate using a hydrochloric acid-based etching solution (for example, hydrochloric acid aqueous solution). The hexagonal pyramid-shaped cone 3 made of a part of the n-type ZnO wafer is formed by performing anisotropic etching utilizing the above. In addition, as an n-type ZnO wafer, what was manufactured using the hydrothermal synthesis method is used. The height of the cone 3 can be defined by the thickness of the n-type ZnO wafer. In the present embodiment, the n-type ZnO wafer having a thickness of 500 μm is used. Is 500 μm, but the thickness of the n-type ZnO wafer is not particularly limited. In addition, the inclination angle of each inclined surface 33 with respect to the lower surface 31 of the cone 3 is defined by the crystal axis direction of the n-type ZnO wafer, and is a Zn polar surface that becomes the lower surface 31 of the weight 3 in the n-type ZnO wafer (0001). The cone 3 is formed by anisotropically etching the n-type ZnO wafer from the O polar plane side by providing a mask appropriately patterned on the (000-1) plane which is the O polar plane opposite to the plane). Therefore, the inclination angle of each inclined surface 33 with respect to the lower surface 31 is 60 °.

上述のように、各可視光ＬＥＤチップ１は、六角錘状のＺｎＯ結晶からなる錐体３の下面側に、窒化物半導体材料からなるＬＥＤ薄膜部２、アノード電極４およびカソード電極５が形成されており、第１の可視光ＬＥＤチップ１のアノード電極４およびカソード電極５それぞれがバンプ１４，１５を介して第１の透明電極７２，７２と接合され、第２の可視光ＬＥＤチップ１のアノード電極４およびカソード電極５それぞれがバンプ１４，１５を介して第２の透明電極７２，７２と接合されている。   As described above, each visible light LED chip 1 has the LED thin film portion 2, the anode electrode 4, and the cathode electrode 5 made of nitride semiconductor material formed on the lower surface side of the cone 3 made of hexagonal pyramidal ZnO crystals. The anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 are joined to the first transparent electrodes 72 and 72 via the bumps 14 and 15, respectively, and the anode of the second visible light LED chip 1. The electrode 4 and the cathode electrode 5 are joined to the second transparent electrodes 72 and 72 via the bumps 14 and 15, respectively.

要するに、第１の可視光ＬＥＤチップ１は、錐体３よりもＬＥＤ薄膜部２が第１の透明基板６１に近くなる形で第１の透明基板６１の上記一表面側に実装され、第２の可視光ＬＥＤチップ１は、錐体３よりもＬＥＤ薄膜部２が第２の透明基板６２に近くなる形で第２の透明基板６２の上記一表面側に実装されている。   In short, the first visible light LED chip 1 is mounted on the one surface side of the first transparent substrate 61 such that the LED thin film portion 2 is closer to the first transparent substrate 61 than the cone 3, and the second The visible light LED chip 1 is mounted on the one surface side of the second transparent substrate 62 such that the LED thin film portion 2 is closer to the second transparent substrate 62 than the cone 3.

上述の各可視光ＬＥＤチップ１は、アノード電極４とカソード電極５との間に順方向バイアス電圧を印加することにより、トンネル電流注入によりアノード電極４からｐ形窒化物半導体層２４へホールが注入されるとともに、カソード電極５からｎ形窒化物半導体層２２へ電子が注入され、発光層２３に注入された電子とホールとが再結合することで発光し、錐体３の各斜面３３およびＬＥＤ薄膜部２におけるｎ形窒化物半導体層２２の錐体３側とは反対側の表面から光が放射される。なお、波長が４５０ｎｍの光に対するＺｎＯの屈折率は２．１、ＧａＮの屈折率は２．４である。   In each visible light LED chip 1 described above, by applying a forward bias voltage between the anode electrode 4 and the cathode electrode 5, holes are injected from the anode electrode 4 into the p-type nitride semiconductor layer 24 by tunnel current injection. At the same time, electrons are injected from the cathode electrode 5 into the n-type nitride semiconductor layer 22, and the electrons and holes injected into the light emitting layer 23 recombine to emit light, and each inclined surface 33 of the cone 3 and the LED. Light is emitted from the surface of the thin film portion 2 opposite to the cone 3 side of the n-type nitride semiconductor layer 22. Note that the refractive index of ZnO for light having a wavelength of 450 nm is 2.1, and the refractive index of GaN is 2.4.

また、各可視光ＬＥＤチップ１は、ＬＥＤ薄膜部２における錐体３側とは反対側の表面（ここでは、ｎ形窒化物半導体層２２の表面）に光取り出し効率向上用の微細凹凸構造２２ａが形成されている。要するに、本実施形態の両面発光デバイスは、第１の可視光ＬＥＤチップ１のＬＥＤ薄膜部２における第１の透明基板６１側の表面に光取り出し効率向上用の微細凹凸構造２２ａが形成され、第２の可視光ＬＥＤチップ１のＬＥＤ薄膜部２における第２の透明基板６２側の表面に光取り出し効率向上用の微細凹凸構造２２ａが形成されている。また、本実施形態の両面発光デバイスは、第１の可視光ＬＥＤチップ１と第１の透明基板６１との間の隙間に第１の透光性樹脂（例えば、シリコーン樹脂、エポキシ樹脂など）からなる第１のアンダーフィル部８１が設けられており、第１の可視光ＬＥＤチップ１のアノード電極４およびカソード電極５と第１の透明基板６１の上記一表面側の第１の透明電極７１，７１との接続信頼性を高めることができる。同様に、第２の可視光ＬＥＤチップ１と第２の透明基板６２との間の隙間に第２の透光性樹脂（例えば、シリコーン樹脂、エポキシ樹脂など）からなる第２のアンダーフィル部８２が設けられており、第２の可視光ＬＥＤチップ１のアノード電極４およびカソード電極５と第２の透明基板６２の上記一表面側の第２の透明電極７２，７２との接続信頼性を高めることができる。   Each visible light LED chip 1 has a fine concavo-convex structure 22a for improving light extraction efficiency on the surface of the LED thin film portion 2 opposite to the side of the cone 3 (here, the surface of the n-type nitride semiconductor layer 22). Is formed. In short, the double-sided light emitting device of the present embodiment has the fine uneven structure 22a for improving the light extraction efficiency formed on the surface of the LED thin film portion 2 of the first visible light LED chip 1 on the first transparent substrate 61 side. A fine concavo-convex structure 22a for improving light extraction efficiency is formed on the surface of the LED thin film portion 2 of the visible light LED chip 1 on the second transparent substrate 62 side. Further, the double-sided light emitting device of the present embodiment is formed from a first translucent resin (for example, a silicone resin, an epoxy resin, etc.) in the gap between the first visible light LED chip 1 and the first transparent substrate 61. The first underfill portion 81 is provided, and the anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 and the first transparent electrode 71 on the one surface side of the first transparent substrate 61, Connection reliability with 71 can be improved. Similarly, a second underfill portion 82 made of a second translucent resin (for example, a silicone resin, an epoxy resin, etc.) is formed in the gap between the second visible light LED chip 1 and the second transparent substrate 62. And the connection reliability between the anode electrode 4 and the cathode electrode 5 of the second visible light LED chip 1 and the second transparent electrodes 72 and 72 on the one surface side of the second transparent substrate 62 is improved. be able to.

以上説明した本実施形態の両面発光デバイスによれば、各可視光ＬＥＤチップ１は、六角錘状のＺｎＯ結晶からなる錐体３の下面３１側に、窒化物半導体材料からなるＬＥＤ薄膜部２、アノード電極４およびカソード電極５が形成されており、第１の可視光ＬＥＤチップ１のアノード電極４およびカソード電極５それぞれがバンプ１４，１５を介して第１の透明基板６１の上記一表面側の第１の透明電極７１，７１と接合され、第２の可視光ＬＥＤチップ１のアノード電極４およびカソード電極５それぞれがバンプ１４，１５を介して第２の透明基板６２の上記一表面側の第２の透明電極７２，７２と接合されているので、第１の可視光ＬＥＤチップ１および第２の可視光ＬＥＤチップ１全てを点灯させる点灯時に、各可視光ＬＥＤチップ１における錐体３の各斜面３３およびＬＥＤ薄膜部２の表面それぞれから光が放射されることとなるから、点灯時の各可視光ＬＥＤチップ１それぞれに起因した影の発生を防止できるとともに輝度むらを低減でき、また、各可視光ＬＥＤチップ１の錐体３がＺｎＯ結晶により構成されており透明なので、消灯時に各可視光ＬＥＤチップ１が目立たず、消灯時の見栄えを良くすることが可能となる。   According to the double-sided light emitting device of the present embodiment described above, each visible light LED chip 1 has an LED thin film portion 2 made of a nitride semiconductor material on the lower surface 31 side of the cone 3 made of hexagonal pyramidal ZnO crystal, An anode electrode 4 and a cathode electrode 5 are formed, and the anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 are respectively disposed on the one surface side of the first transparent substrate 61 via the bumps 14 and 15. The anode electrode 4 and the cathode electrode 5 of the second visible light LED chip 1 are bonded to the first transparent electrodes 71 and 71, respectively, and the first transparent electrode 62 on the one surface side of the second transparent substrate 62 is interposed via the bumps 14 and 15. Since the two transparent electrodes 72 and 72 are joined together, each visible light LED chip 1 is turned on when the first visible light LED chip 1 and the second visible light LED chip 1 are turned on. Since light is emitted from each inclined surface 33 of the cone 3 and the surface of the LED thin film portion 2, it is possible to prevent the occurrence of shadows caused by the respective visible light LED chips 1 during lighting and to prevent unevenness in luminance. Moreover, since the cone 3 of each visible light LED chip 1 is made of ZnO crystal and is transparent, each visible light LED chip 1 is not conspicuous when turned off, and it is possible to improve the appearance when turned off. .

また、本実施形態の両面発光デバイスでは、各可視光ＬＥＤチップ１それぞれにおけるＬＥＤ薄膜部２の錐体３側とは反対側の表面に光取り出し効率向上用の微細凹凸構造２２ａが形成されているので、各可視光ＬＥＤチップ１においてＬＥＤ薄膜部２から錐体３側とは反対側に放射される光（ここでは、発光層２３からｎ形窒化物半導体層２２側へ放射される光）がＬＥＤ薄膜部２の表面で反射されるのを抑制して効率良く取り出すことができ、点灯時の輝度むらをより低減できるとともに、光取り出し効率の向上を図れる。   Moreover, in the double-sided light emitting device of this embodiment, the fine uneven structure 22a for light extraction efficiency improvement is formed in the surface on the opposite side to the cone 3 side of the LED thin film part 2 in each visible light LED chip 1 each. Therefore, in each visible light LED chip 1, light emitted from the LED thin film portion 2 to the side opposite to the cone 3 side (here, light emitted from the light emitting layer 23 to the n-type nitride semiconductor layer 22 side). Reflection on the surface of the LED thin film portion 2 can be suppressed and the light can be efficiently taken out, luminance unevenness at the time of lighting can be further reduced, and light extraction efficiency can be improved.

また、本実施形態の両面発光デバイスでは、上述のように、第１の可視光ＬＥＤチップ１のＬＥＤ薄膜部２と第１の透明基板６１との間の隙間に第１の透光性樹脂からなる第１のアンダーフィル部８１が設けられ、第２の可視光ＬＥＤチップ１のＬＥＤ薄膜部２と第２の透明基板６２との間の隙間に第２の透光性樹脂からなる第２のアンダーフィル部８２が設けられているので、各可視光ＬＥＤチップ１においてＬＥＤ薄膜部２から錐体３側とは反対側に放射される光（ここでは、発光層２３からｎ形窒化物半導体層２２側へ放射される光）がＬＥＤ薄膜部２の表面で反射されるのを抑制して効率良く取り出すことができ、点灯時の輝度むらをより低減できるとともに、光取り出し効率の向上を図れる。   Moreover, in the double-sided light-emitting device of this embodiment, as above-mentioned, it is from 1st translucent resin to the clearance gap between the LED thin film part 2 of the 1st visible light LED chip 1, and the 1st transparent substrate 61. A first underfill portion 81 is provided, and a second light-transmitting resin second gap is formed in the gap between the LED thin film portion 2 of the second visible light LED chip 1 and the second transparent substrate 62. Since the underfill portion 82 is provided, light emitted from the LED thin film portion 2 to the side opposite to the cone 3 side in each visible light LED chip 1 (here, the light emitting layer 23 to the n-type nitride semiconductor layer) The light emitted to the 22 side) can be efficiently taken out while being reflected from the surface of the LED thin film portion 2, the luminance unevenness at the time of lighting can be further reduced, and the light extraction efficiency can be improved.

ところで、上述の実施形態では、第１の可視光ＬＥＤチップ１および第２の可視光ＬＥＤチップ１から放射される光が青色光となるように発光層２３を設計してあるが、各可視光ＬＥＤチップ１から放射される光は青色光に限らず、例えば、赤色光、緑色光、紫色光、紫外光などでもよい。また、本実施形態の両面発光デバイスは、例えば、第１の透明基板６１および第２の透明基板６２それぞれに、可視光ＬＥＤチップ１から放射される光によって励起されて可視光ＬＥＤチップ１よりも長波長の光を放射する波長変換材料である蛍光体を含有した透光性材料からなる色変換層を設けて、可視光ＬＥＤチップ１の発光色とは異なる色合いの混色光（例えば、白色光など）を出すようにしてもよい。ここで、上記色変換層は、例えば、各透明基板６１，６２それぞれの上記他表面や、各透明基板６１，６２の厚み方向の中間に設ければよい。また、上記色変換層を設ける代わりに、各透明基板６１，６２それぞれに上記蛍光体を分散させてもよい。なお、本実施形態の両面発光デバイスは、インテリア用途、サイン用途、照明用途、住宅の窓ガラス用途など多様な用途がある。   By the way, in the above-mentioned embodiment, although the light emitting layer 23 is designed so that the light radiated | emitted from the 1st visible light LED chip 1 and the 2nd visible light LED chip 1 turns into blue light, each visible light The light emitted from the LED chip 1 is not limited to blue light, and may be red light, green light, purple light, ultraviolet light, or the like. Moreover, the double-sided light emitting device of this embodiment is excited by the light radiated | emitted from the visible light LED chip 1 to each of the 1st transparent substrate 61 and the 2nd transparent substrate 62, for example rather than the visible light LED chip 1. A color conversion layer made of a translucent material containing a phosphor that is a wavelength conversion material that emits light having a long wavelength is provided, and mixed color light (for example, white light) having a color different from the emission color of the visible light LED chip 1 is provided. Etc.) may be issued. Here, the color conversion layer may be provided, for example, on the other surface of each of the transparent substrates 61 and 62 or in the middle of the thickness direction of the transparent substrates 61 and 62. Further, instead of providing the color conversion layer, the phosphor may be dispersed on each of the transparent substrates 61 and 62. The double-sided light emitting device of this embodiment has various uses such as interior use, sign use, lighting use, and house window glass.

実施形態の両面発光デバイスを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＢ−Ｂ’概略断面図、（ｃ）は（ｂ）の要部拡大図である。The double-sided light emitting device of embodiment is shown, (a) is a schematic plan view, (b) is B-B 'schematic sectional drawing of (a), (c) is the principal part enlarged view of (b). 従来例を示す両面発光デバイスの要部概略断面図である。It is a principal part schematic sectional drawing of the double-sided light-emitting device which shows a prior art example.

符号の説明Explanation of symbols

１ 可視光ＬＥＤチップ（第１の可視光ＬＥＤチップ、第２の可視光ＬＥＤチップ）
２ ＬＥＤ薄膜部
３ 錐体
４ アノード電極
５ カソード電極
６ 保持枠
７ 太陽電池
１４ バンプ
１５ バンプ
３１ 下面
３３ 斜面
２２ａ 微細凹凸構造
６１ 第１の透明基板
６２ 第２の透明基板
７１ 第１の透明電極
７２ 第２の透明電極
８１ 第１のアンダーフィル部
８２ 第２のアンダーフィル部 1 visible light LED chip (first visible light LED chip, second visible light LED chip)
2 LED thin film part 3 Cone 4 Anode electrode 5 Cathode electrode 6 Holding frame 7 Solar cell 14 Bump 15 Bump 31 Lower surface 33 Slope 22a Fine uneven structure 61 First transparent substrate 62 Second transparent substrate 71 First transparent electrode 72 Second transparent electrode 81 First underfill portion 82 Second underfill portion

Claims (4)

第１の透明基板と、第１の透明基板の一表面側に実装された複数の第１の可視光ＬＥＤチップと、第１の透明基板の前記一表面側に設けられ複数の第１の可視光ＬＥＤチップへ給電するための第１の透明電極と、第１の透明基板の前記一表面側に対向配置された第２の透明基板と、第２の透明基板における第１の透明基板との対向面である一表面側に実装された複数の第２の可視光ＬＥＤチップと、第２の透明基板の前記一表面側に設けられ複数の第２の可視光ＬＥＤチップへ給電するための第２の透明電極とを備え、各可視光ＬＥＤチップは、六角錘状のＺｎＯ結晶からなる錐体の下面側に、窒化物半導体材料からなるＬＥＤ薄膜部、アノード電極およびカソード電極が形成されてなり、第１の可視光ＬＥＤチップのアノード電極およびカソード電極それぞれがバンプを介して第１の透明電極と接合され、第２の可視光ＬＥＤチップのアノード電極およびカソード電極それぞれがバンプを介して第２の透明電極と接合されてなることを特徴とする両面発光デバイス。   A first transparent substrate; a plurality of first visible light LED chips mounted on one surface side of the first transparent substrate; and a plurality of first visible lights provided on the one surface side of the first transparent substrate. A first transparent electrode for supplying power to the optical LED chip; a second transparent substrate opposed to the one surface side of the first transparent substrate; and a first transparent substrate in the second transparent substrate A plurality of second visible light LED chips mounted on the one surface side which is the opposing surface, and a second power supply for supplying power to the plurality of second visible light LED chips provided on the one surface side of the second transparent substrate. Each of the visible light LED chips is formed by forming an LED thin film portion made of a nitride semiconductor material, an anode electrode, and a cathode electrode on the lower surface side of a cone made of hexagonal pyramidal ZnO crystals. The first visible light LED chip anode electrode and the cap Each of the electrode electrodes is bonded to the first transparent electrode via a bump, and each of the anode electrode and the cathode electrode of the second visible light LED chip is bonded to the second transparent electrode via a bump. A double-sided light emitting device. 前記第１の可視光ＬＥＤチップの前記ＬＥＤ薄膜部における前記第１の透明基板側の表面に光取り出し効率向上用の微細凹凸構造が形成されてなり、前記第２の可視光ＬＥＤチップの前記ＬＥＤ薄膜部における前記第２の透明基板側の表面に光取り出し効率向上用の微細凹凸構造が形成されてなることを特徴とする請求項１記載の両面発光デバイス。   A fine concavo-convex structure for improving light extraction efficiency is formed on the surface of the LED thin film portion of the first visible LED chip on the first transparent substrate side, and the LED of the second visible LED chip 2. The double-sided light emitting device according to claim 1, wherein a fine uneven structure for improving light extraction efficiency is formed on the surface of the thin film portion on the second transparent substrate side. 前記第１の可視光ＬＥＤチップと前記第１の透明基板との間の隙間に第１の透光性樹脂からなる第１のアンダーフィル部が設けられ、前記第２の可視光ＬＥＤチップと前記第２の透明基板との間の隙間に第２の透光性樹脂からなる第２のアンダーフィル部が設けられてなることを特徴とする請求項１または請求項２記載の両面発光デバイス。   A first underfill portion made of a first translucent resin is provided in a gap between the first visible light LED chip and the first transparent substrate, and the second visible light LED chip and the The double-sided light emitting device according to claim 1 or 2, wherein a second underfill portion made of a second translucent resin is provided in a gap between the second transparent substrate and the second transparent substrate. 前記第１の透明基板と前記第２の透明基板とを保持する保持枠を備え、前記第１の透明基板と前記第２の透明基板と保持枠とで囲まれる空間が真空雰囲気もしくはドライエア雰囲気であり、保持枠に前記第１の可視光ＬＥＤチップおよび前記第２の可視光ＬＥＤチップへの給電用の二次電池が設けられるとともに、当該二次電池を充電可能な太陽電池が設けられてなることを特徴とすることを特徴とする請求項１ないし請求項３のいずれか１項に記載の両面発光デバイス。   A holding frame that holds the first transparent substrate and the second transparent substrate is provided, and a space surrounded by the first transparent substrate, the second transparent substrate, and the holding frame is a vacuum atmosphere or a dry air atmosphere. And a holding frame is provided with a secondary battery for supplying power to the first visible light LED chip and the second visible light LED chip, and a solar battery capable of charging the secondary battery is provided. The double-sided light emitting device according to any one of claims 1 to 3, wherein the double-sided light-emitting device is characterized in that
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