JP2009302145A

JP2009302145A - Light-emitting device

Info

Publication number: JP2009302145A
Application number: JP2008152091A
Authority: JP
Inventors: Akihiko Murai; 章彦村井; Keiichi Yamazaki; 圭一山崎; Kenichiro Tanaka; 健一郎田中
Original assignee: Panasonic Electric Works Co Ltd
Current assignee: Panasonic Electric Works Co Ltd
Priority date: 2008-06-10
Filing date: 2008-06-10
Publication date: 2009-12-24

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of suppressing degradation of quantum efficiency caused by temperature rising of phosphor, and capable of widening a divergence angle of emission light. <P>SOLUTION: The light-emitting device includes an LED chip 10, and a color conversion member 70 which is formed from a translucent material containing a phosphor which is excited with the light radiated from the LED chip 10 to release the light whose wavelength is longer than the LED chip 10, and is so bonded to a mounting substrate 20 as to enclose the LED chip 10 with the mounting substrate 20. The LED chip 10 is so mounted on the mounting substrate 20 that an LED part (light-emitting part) 12 having a lamination structure comprising a p-type nitride semiconductor layer, a light-emitting layer, and an n-type nitride semiconductor layer, a cathode electrode 13a which is electrically connected to the n-type nitride semiconductor layer, and an anode electrode 13b which is electrically connected to the p-type nitride semiconductor layer, are formed on the lower surface side of a conductive spindle 11 of six-sided pyramid shape comprising ZnO crystal. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を備えた発光装置に関するものである。 The present invention relates to a light emitting device including an LED chip (light emitting diode chip).

従来から、ＬＥＤチップとＬＥＤチップから放射された光によって励起されてＬＥＤチップとは異なる発光色の光を放射する波長変換材料としての蛍光体とを組み合わせてＬＥＤチップの発光色とは異なる色合いの混色光を出す発光装置の研究開発が各所で行われている（例えば、特許文献１参照）。なお、この種の発光装置としては、例えば、青色光あるいは紫外光を放射するＬＥＤチップと蛍光体とを組み合わせて白色の光（白色光の発光スペクトル）を得る白色発光装置（一般的に白色ＬＥＤと呼ばれている）の商品化がなされている。 Conventionally, an LED chip and a phosphor that is excited by light emitted from the LED chip and emits light of a color different from that of the LED chip is combined with a phosphor that emits light having a different color from the LED chip. Research and development of light-emitting devices that emit mixed color light are performed in various places (for example, see Patent Document 1). In addition, as this kind of light emitting device, for example, a white light emitting device (generally a white LED) that obtains white light (white light emission spectrum) by combining an LED chip that emits blue light or ultraviolet light and a phosphor. Has been commercialized).

上記特許文献１には、この種の発光装置の一例として、図５に示すように、ＬＥＤチップ１０’と、当該ＬＥＤチップ１０’が実装された実装基板２０’と、第１の透光性材料（例えば、シリコーン樹脂など）により形成され実装基板２０’におけるＬＥＤチップ１０’の実装面側でＬＥＤチップ１０’を封止した半球状の透光性封止部５０’と、ＬＥＤチップ１０’から放射される光によって励起されてＬＥＤチップ１０’よりも長波長の光を放射する蛍光体を含有した第２の透光性材料（例えば、シリコーン樹脂など）により形成され透光性封止部５０’との間に空気層８０’が介在する形で実装基板２０’に固着されたドーム状の色変換部材７０’とを備えた発光装置が記載されている。なお、上記特許文献１には、ＬＥＤチップ１０’として紫外光を放射するＧａＮ系の紫外ＬＥＤチップを用い、蛍光体として赤色蛍光体と緑色蛍光体と青色蛍光体とを用いて白色光を得る例が記載されているが、色むらを抑制するために、ＬＥＤチップ１０’として可視光である青色光を放射する青色ＬＥＤチップを用い、蛍光体として黄色蛍光体を用いて白色光を得ることも考えられる。
特許第３９７８４５１号公報 In Patent Document 1, as an example of this type of light emitting device, as shown in FIG. 5, an LED chip 10 ′, a mounting substrate 20 ′ on which the LED chip 10 ′ is mounted, and a first light-transmitting property are disclosed. A hemispherical translucent sealing portion 50 ′ formed of a material (for example, silicone resin) and sealing the LED chip 10 ′ on the mounting surface side of the LED chip 10 ′ in the mounting substrate 20 ′; and the LED chip 10 ′ A light-transmitting sealing portion formed of a second light-transmitting material (for example, silicone resin) containing a phosphor that emits light having a wavelength longer than that of the LED chip 10 ′ when excited by light emitted from the LED chip 10 ′ A light emitting device is described that includes a dome-shaped color conversion member 70 ′ fixed to the mounting substrate 20 ′ with an air layer 80 ′ interposed therebetween. In Patent Document 1, a GaN ultraviolet LED chip that emits ultraviolet light is used as the LED chip 10 ′, and white light is obtained using a red phosphor, a green phosphor, and a blue phosphor as phosphors. Although an example is described, in order to suppress color unevenness, a blue LED chip that emits blue light, which is visible light, is used as the LED chip 10 ′, and white light is obtained using a yellow phosphor as the phosphor. Is also possible.
Japanese Patent No. 3978451

ところで、上述の発光装置は、ＬＥＤチップ１０’が平板状の面発光型のＬＥＤチップであり、放射光強度の放射角依存性がランバート（Lambert）型分布で近似されるとすると、ＬＥＤチップ１０’の直上方向の放射光強度を１とした場合、直上方向から４５°傾いた方向の放射光強度が０．６、直上方向から６０°傾いた方向の放射光強度が０．４となり、色変換部材７０’から出射される白色光の配光がＬＥＤチップ１０’から出射される青色光の配光に起因して狭角配光となるので、広角配光の白色光源を得るためには大掛かりな光学レンズなどを用いる必要があり、照明用途に用いる場合のコスト増加の原因となってしまい、また、色変換部材７０’の頂部における相対入射光強度が色変換部材７０’の周部における相対入射光強度に比べて大きく、ストークスシフトによるエネルギ損失に起因して発熱する蛍光体が局所的に集中しやすくなって、色変換部材７０’の温度が局所的に上昇しやすくなるので、蛍光体の量子効率が低下し、結果的に白色光の発光効率が低下してしまう。 By the way, in the light emitting device described above, if the LED chip 10 ′ is a flat surface emitting LED chip, and the radiation angle dependency of the emitted light intensity is approximated by a Lambert distribution, the LED chip 10 Assuming that the emitted light intensity directly above '1 is 1, the emitted light intensity in the direction inclined 45 ° from the directly above direction is 0.6, the emitted light intensity in the direction inclined 60 ° from the immediately above direction is 0.4, and the color In order to obtain a white light source with a wide-angle light distribution, the light distribution of the white light emitted from the conversion member 70 ′ becomes a narrow-angle light distribution due to the light distribution of the blue light emitted from the LED chip 10 ′. It is necessary to use a large optical lens or the like, which causes an increase in cost when used for illumination purposes, and the relative incident light intensity at the top of the color conversion member 70 ′ is at the periphery of the color conversion member 70 ′. Relative light intensity The phosphors that generate heat due to energy loss due to Stokes shift are likely to concentrate locally, and the temperature of the color conversion member 70 ′ is likely to rise locally. As a result, the luminous efficiency of white light is reduced.

本発明は上記事由に鑑みて為されたものであり、その目的は、蛍光体の温度上昇による量子効率の低下を抑制でき、且つ、出射光の広がり角を大きくすることが可能な発光装置を提供することにある。 The present invention has been made in view of the above-described reasons, and an object of the present invention is to provide a light-emitting device capable of suppressing a decrease in quantum efficiency due to a temperature rise of a phosphor and increasing a spread angle of emitted light. It is to provide.

請求項１の発明は、ＬＥＤチップと、当該ＬＥＤチップが実装された実装基板と、ＬＥＤチップから放射される光によって励起されてＬＥＤチップよりも長波長の光を放射する蛍光体を含有した透光性材料により形成され実装基板との間にＬＥＤチップを囲む形で実装基板に固着された色変換部材とを備え、ＬＥＤチップは、ｎ形窒化物半導体層とｐ形窒化物半導体層とを有するＬＥＤ部、ｎ形窒化物半導体層に電気的に接続されたカソード電極およびｐ形窒化物半導体層に電気的に接続されたアノード電極がＺｎＯ結晶からなる六角錘状の錐体の下面側に形成されてなり、当該錐体よりもＬＥＤ部が実装基板に近くなる形で実装基板に実装されてなることを特徴とする。 The invention of claim 1 includes a LED chip, a mounting substrate on which the LED chip is mounted, and a transparent material that is excited by light emitted from the LED chip and emits light having a longer wavelength than the LED chip. And a color conversion member fixed to the mounting substrate so as to surround the LED chip between the mounting substrate and the LED chip. The LED chip includes an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. An LED portion having a cathode electrode electrically connected to the n-type nitride semiconductor layer and an anode electrode electrically connected to the p-type nitride semiconductor layer on the lower surface side of the hexagonal pyramid cone made of ZnO crystal. It is formed, and the LED portion is mounted on the mounting substrate so as to be closer to the mounting substrate than the cone.

この発明によれば、実装基板に実装されたＬＥＤチップから放射される光によって励起されてＬＥＤチップよりも長波長の光を放射する蛍光体を含有した透光性材料により形成され実装基板との間にＬＥＤチップを囲む形で実装基板に固着された色変換部材を備え、ＬＥＤチップは、ｎ形窒化物半導体層とｐ形窒化物半導体層とを有するＬＥＤ部、ｎ形窒化物半導体層に電気的に接続されたカソード電極およびｐ形窒化物半導体層に電気的に接続されたアノード電極がＺｎＯ結晶からなる六角錘状の錐体の下面側に形成されてなり、当該錐体よりもＬＥＤ部が実装基板に近くなる形で実装基板に実装されているので、ＬＥＤチップの出射光の広がり角を大きくすることができるから、色変換部材の局所的な温度上昇を抑制できて蛍光体の温度上昇による量子効率の低下を抑制でき、且つ、出射光の広がり角を大きくすることが可能になる。 According to the present invention, the mounting substrate is formed of a translucent material containing a phosphor that is excited by light emitted from the LED chip mounted on the mounting substrate and emits light having a longer wavelength than the LED chip. The LED chip includes a color conversion member fixed to the mounting substrate so as to surround the LED chip, and the LED chip includes an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, and an n-type nitride semiconductor layer. An electrically connected cathode electrode and an anode electrode electrically connected to the p-type nitride semiconductor layer are formed on the lower surface side of a hexagonal pyramid cone made of ZnO crystal, and the LED is more than the cone. Since the portion is mounted on the mounting substrate in a manner close to the mounting substrate, the spread angle of the emitted light of the LED chip can be increased, so that the local temperature rise of the color conversion member can be suppressed and the phosphor temperature It can suppress a decrease in quantum efficiency due to the temperature, and makes it possible to increase the divergence angle of the emitted light.

請求項２の発明は、請求項１の発明において、前記色変換部材は、下面開口した六角錐状の形状に形成されてなることを特徴とする。 A second aspect of the invention is characterized in that, in the first aspect of the invention, the color conversion member is formed in a hexagonal pyramid shape having an open bottom surface.

この発明によれば、前記ＬＥＤチップの前記錐体から放射された光が前記色変換部材の光入射面で全反射されるのを抑制できて前記ＬＥＤチップからの光を前記色変換部材で効率良く色変換（波長変換）することができ、また、前記色変換部材の光入射面への前記ＬＥＤチップからの光の入射光強度の均一化を図れ、前記色変換部材の局所的な温度上昇をより抑制することができ、蛍光体の量子効率の向上を図れる。 According to the present invention, the light emitted from the cone of the LED chip can be prevented from being totally reflected by the light incident surface of the color conversion member, and the light from the LED chip can be efficiently used by the color conversion member. Color conversion (wavelength conversion) can be performed well, and the intensity of light incident from the LED chip on the light incident surface of the color conversion member can be made uniform, and the temperature of the color conversion member rises locally. Can be further suppressed, and the quantum efficiency of the phosphor can be improved.

請求項３の発明は、請求項１または請求項２の発明において、前記色変換部材は、前記ＬＥＤチップとの間に空気層が形成される形で前記実装基板に固着されてなることを特徴とする。 According to a third aspect of the present invention, in the first or second aspect of the invention, the color conversion member is fixed to the mounting substrate in a form in which an air layer is formed between the color conversion member and the LED chip. And

この発明によれば、前記ＬＥＤチップを封止する透光性封止部を備え前記色変換部材と透光性封止部との間に空気層が形成されている場合に比べて、発光装置全体の小型化を図れ、また、前記ＬＥＤチップから放射されて前記色変換部材に入射し前記色変換部材の前記蛍光体により散乱された光のうち前記ＬＥＤチップ側へ散乱されて前記ＬＥＤチップに吸収される光の光量を低減できて外部への光取り出し効率を向上できる。 According to this invention, the light-emitting device is provided as compared with the case where a light-transmitting sealing portion that seals the LED chip is provided and an air layer is formed between the color conversion member and the light-transmitting sealing portion. The entire size can be reduced, and the light emitted from the LED chip, incident on the color conversion member and scattered by the phosphor of the color conversion member is scattered toward the LED chip and is reflected on the LED chip. The amount of absorbed light can be reduced, and the light extraction efficiency to the outside can be improved.

請求項４の発明は、請求項１または請求項２の発明において、前記色変換部材は、内側面が前記錐体の外側面全体に接する大きさに形成されてなることを特徴とする。 According to a fourth aspect of the present invention, in the first or second aspect of the present invention, the color conversion member is formed such that the inner surface is in contact with the entire outer surface of the cone.

この発明によれば、発光装置全体の小型化を図れるとともに、前記色変換部材の前記蛍光体で発生した熱を前記ＬＥＤチップを通して放熱させることができて、前記蛍光体の温度上昇をより抑制できて、量子効率のより一層の向上を図れる。 According to the present invention, the entire light emitting device can be reduced in size, and the heat generated in the phosphor of the color conversion member can be dissipated through the LED chip, and the temperature rise of the phosphor can be further suppressed. Thus, the quantum efficiency can be further improved.

請求項１の発明では、蛍光体の温度上昇による量子効率の低下を抑制でき、且つ、出射光の広がり角を大きくすることが可能になるという効果がある。 According to the first aspect of the present invention, there is an effect that it is possible to suppress the decrease in quantum efficiency due to the temperature rise of the phosphor and to increase the spread angle of the emitted light.

（実施形態１）
以下、本実施形態の発光装置について図１を参照しながら説明する。 (Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIG.

本実施形態の発光装置は、図１に示すように、ＬＥＤチップ１０と、当該ＬＥＤチップ１０が実装された矩形板状の実装基板２０と、ＬＥＤチップ１０から放射される光によって励起されてＬＥＤチップ１０よりも長波長の光を放射する蛍光体を含有した透光性材料により形成され実装基板２０との間にＬＥＤチップ１０を囲む形で実装基板２０に固着された色変換部材７０とを備えている。 As shown in FIG. 1, the light emitting device of the present embodiment is an LED that is excited by light emitted from the LED chip 10, a rectangular plate-like mounting substrate 20 on which the LED chip 10 is mounted, and the LED chip 10. A color conversion member 70 formed of a translucent material containing a phosphor that emits light having a wavelength longer than that of the chip 10 and fixed to the mounting substrate 20 so as to surround the LED chip 10 with the mounting substrate 20. I have.

また、本実施形態の発光装置は、実装基板２０におけるＬＥＤチップ１０の実装面側でＬＥＤチップ１０を封止した透光性封止部５０を備えており、上述の色変換部材７０は、透光性封止部５０との間に空気層８０が形成される形で実装基板２０に固着されている。 In addition, the light emitting device of the present embodiment includes a translucent sealing portion 50 that seals the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20. The air layer 80 is formed between the optical sealing portion 50 and the mounting substrate 20.

本実施形態の発光装置では、ＬＥＤチップ１０として、青色光を放射するＧａＮ系青色ＬＥＤチップを用い、色変換部材７０の蛍光体として、ＬＥＤチップ１０から放射された青色光によって励起されて黄色光を放射する粒子状の黄色蛍光体を用いており、ＬＥＤチップ１０から放射され透光性封止部５０、空気層８０、および色変換部材７０を通過した青色光と、色変換部材７０の黄色蛍光体から放射された黄色光との混色光からなる白色光を得ることができる。 In the light emitting device of this embodiment, a GaN-based blue LED chip that emits blue light is used as the LED chip 10, and yellow light is excited by the blue light emitted from the LED chip 10 as the phosphor of the color conversion member 70. The blue light emitted from the LED chip 10 and passed through the light-transmitting sealing portion 50, the air layer 80, and the color conversion member 70, and the yellow color of the color conversion member 70 are used. White light consisting of mixed color light with yellow light emitted from the phosphor can be obtained.

実装基板２０は、電気絶縁性を有し且つ熱伝導率の高い窒化アルミニウム基板からなる絶縁性基板２０ａの一表面側に、ＬＥＤチップ１０が電気的に接続される配線パターン２３，２３、ＬＥＤチップ１０から放射された光を反射する複数の光反射膜２４が形成されている。ここで、各配線パターン２３，２３は、一端側にＬＥＤチップ１０が金属材料（例えば、Ａｕ、半田など）からなるバンプ１４，１４を介して接合される端子部２３ａが形成され、他端側に外部接続用電極部２３ｂが形成されている。ここにおいて、外部接続用電極部２３ｂは、平面視において色変換部材７０よりも外側で露出している。なお、絶縁性基板２０ａは、ＬＥＤチップ１０および色変換部材７０それぞれで発生した熱を伝熱させる伝熱板を兼ねたものであり、ガラスエポキシ樹脂基板などの有機系基板に比べて熱伝導率の高いものであればよく、窒化アルミニウム基板に限らず、例えば、アルミナ基板や、ホーロー基板、表面にシリコン酸化膜が形成されたシリコン基板などを採用してもよい。また、配線パターン２３，２３は、Ｃｕ膜とＮｉ膜とＡｕ膜との積層膜により構成され、最上層がＡｕ膜となっている。また、各光反射膜２４は、Ｎｉ膜とＡｇ膜との積層膜により構成してあるが、材料や層構造は特に限定するものではなく、例えば、Ｎｉ膜とＡｌ膜との積層膜により構成してもよい。 The mounting substrate 20 includes wiring patterns 23 and 23 in which the LED chip 10 is electrically connected to one surface side of an insulating substrate 20a made of an aluminum nitride substrate having electrical insulation and high thermal conductivity, A plurality of light reflecting films 24 that reflect the light emitted from 10 are formed. Here, each wiring pattern 23, 23 is formed with a terminal portion 23 a to which the LED chip 10 is joined via bumps 14, 14 made of a metal material (for example, Au, solder, etc.) on one end side, and the other end side. The external connection electrode portion 23b is formed on the surface. Here, the external connection electrode portion 23b is exposed outside the color conversion member 70 in plan view. The insulating substrate 20a also serves as a heat transfer plate for transferring the heat generated by the LED chip 10 and the color conversion member 70, and has a thermal conductivity as compared with an organic substrate such as a glass epoxy resin substrate. However, the substrate is not limited to an aluminum nitride substrate. For example, an alumina substrate, a hollow substrate, or a silicon substrate having a silicon oxide film formed on the surface may be employed. Moreover, the wiring patterns 23 and 23 are comprised by the laminated film of Cu film | membrane, Ni film | membrane, and Au film | membrane, and the uppermost layer is Au film | membrane. Each light reflecting film 24 is constituted by a laminated film of a Ni film and an Ag film, but the material and the layer structure are not particularly limited. For example, the light reflecting film 24 is constituted by a laminated film of a Ni film and an Al film. May be.

ＬＥＤチップ１０は、青色光を放射するＧａＮ系の青色ＬＥＤチップであり、ｐ形窒化物半導体層と発光層とｎ形窒化物半導体層との積層構造を有するＬＥＤ部（発光部）１２、ｎ形窒化物半導体層に電気的に接続されたカソード電極１３ａおよびｐ形窒化物半導体層に電気的に接続されたアノード電極１３ｂが導電性を有するＺｎＯ結晶からなる六角錘状の錐体１１の下面側に形成されており、ＬＥＤ部１２が錐体１１よりも実装基板２０に近い側となる形で実装基板２０に実装されている（言い換えれば、錐体１１よりもＬＥＤ部１２が実装基板２０に近くなる形で実装基板２０に実装されている）。要するに、ＬＥＤチップ１は、アノード電極１３ｂおよびカソード電極１３ａそれぞれがバンプ１４，１４を介して配線パターン２３，２３の端子部２３ａ，２３ａと接合されている。 The LED chip 10 is a GaN-based blue LED chip that emits blue light, and has an LED unit (light-emitting unit) 12 having a stacked structure of a p-type nitride semiconductor layer, a light-emitting layer, and an n-type nitride semiconductor layer, n The lower surface of the hexagonal pyramid-shaped cone 11 in which the cathode electrode 13a electrically connected to the p-type nitride semiconductor layer and the anode electrode 13b electrically connected to the p-type nitride semiconductor layer are made of conductive ZnO crystals. The LED portion 12 is mounted on the mounting substrate 20 so as to be closer to the mounting substrate 20 than the cone 11 (in other words, the LED portion 12 is mounted on the mounting substrate 20 rather than the cone 11). It is mounted on the mounting board 20 in a form close to In short, in the LED chip 1, the anode electrode 13b and the cathode electrode 13a are joined to the terminal portions 23a and 23a of the wiring patterns 23 and 23 via the bumps 14 and 14, respectively.

ＬＥＤチップ１０のＬＥＤ部１２は、ｎ形窒化物半導体層をｎ形ＧａＮ層により構成し、発光層をＩｎＧａＮ層により構成し、ｐ形窒化物半導体層を発光層側のｐ形ＡｌＧａＮ層と当該ｐ形ＡｌＧａＮ層における発光層側とは反対側のｐ形ＧａＮ層とで構成してあるが、ＬＥＤ部１２の積層構造は特に限定するものではなく、発光層は単層構造に限らず、多重量子井戸構造ないし単一量子井戸構造でもよい。 The LED portion 12 of the LED chip 10 includes an n-type nitride semiconductor layer composed of an n-type GaN layer, a light-emitting layer composed of an InGaN layer, and a p-type nitride semiconductor layer connected to the p-type AlGaN layer on the light-emitting layer side. The p-type AlGaN layer is composed of a p-type GaN layer opposite to the light-emitting layer side, but the stacked structure of the LED unit 12 is not particularly limited, and the light-emitting layer is not limited to a single layer structure, It may be a quantum well structure or a single quantum well structure.

また、ＬＥＤチップ１０は、カソード電極１３ａが、ＬＥＤ部１２のｎ形窒化物半導体層に接する形で形成されて当該ｎ形窒化物半導体層と電気的に接続され、アノード電極１３ｂが錐体１１の下面に接する形で形成され当該錐体１１を介してｐ形窒化物半導体層と電気的に接続されている。したがって、ｎ形窒化物半導体層と発光層とｐ形窒化物半導体層との平面サイズを同じにすることができる。ここで、ＬＥＤチップ１０のアノード電極１３ｂおよびカソード電極１３ａは、下層側のＮｉ膜と上層側のＡｕ膜との積層膜により構成されている。また、各バンプ１４，１４はＡｕバンプにより構成されているが、各バンプ１４，１４の材料はＡｕに限らず、半田などでもよいが、ＬＥＤチップ１０で発生した熱を効率的に放熱させるには、半田に比べて熱伝導率の高いＡｕを採用することが好ましい。カソード電極１３ａおよびアノード電極１３ｂそれぞれと配線パターン２３，２３との間に介在するバンプ１４の数は特に限定するものではないが、バンプ１４の数が多いほどＬＥＤチップ１０と実装基板２０との間の熱抵抗を低減できて放熱性を高めることができる。 In the LED chip 10, the cathode electrode 13 a is formed in contact with the n-type nitride semiconductor layer of the LED unit 12 and is electrically connected to the n-type nitride semiconductor layer, and the anode electrode 13 b is the cone 11. And is electrically connected to the p-type nitride semiconductor layer via the cone 11. Therefore, the planar sizes of the n-type nitride semiconductor layer, the light emitting layer, and the p-type nitride semiconductor layer can be made the same. Here, the anode electrode 13b and the cathode electrode 13a of the LED chip 10 are configured by a laminated film of a lower layer Ni film and an upper layer Au film. The bumps 14 and 14 are composed of Au bumps, but the material of the bumps 14 and 14 is not limited to Au but may be solder or the like. However, in order to efficiently dissipate the heat generated in the LED chip 10. It is preferable to use Au, which has a higher thermal conductivity than solder. The number of bumps 14 interposed between the cathode electrode 13a and the anode electrode 13b and the wiring patterns 23 and 23 is not particularly limited. However, the larger the number of bumps 14, the greater the distance between the LED chip 10 and the mounting substrate 20. Therefore, the heat resistance can be reduced.

上述のＬＥＤチップ１０は、主表面がｃ面のサファイアウェハの主表面側に上記積層構造を有するＬＥＤ部１２をエピタキシャル成長法（例えば、ＭＯＶＰＥ法など）により成長し、その後、ＬＥＤ部１２を錐体１１の基礎となるＺｎＯウェハに固着してから、サファイアウェハを除去し、続いて、塩酸系のエッチング液を用いてエッチング速度の結晶方位依存性を利用した異方性エッチングを行うことによりＺｎＯウェハの一部からなる六角錘状の錐体１１を形成している。なお、ＺｎＯウェハとしては、水熱合成法を利用して製造したものを用いている。錐体１１の高さは、ＺｎＯウェハの厚さで規定することができ、本実施形態では、ＺｎＯウェハとして厚さが５００μｍのものを用いているので、錐体１１の高さは５００μｍとなっているが、ＺｎＯウェハの厚さは特に限定するものではない。また、錐体１１の下面（底面）に対する各側面それぞれの傾斜角は、ＺｎＯウェハの結晶軸方向で規定され、主表面がｃ面のＺｎＯウェハに対して上述の異方性エッチングを行うことにより錐体１１を形成しているので、下面に対する各側面それぞれの傾斜角が６０°となっている。 In the LED chip 10 described above, the LED portion 12 having the above laminated structure is grown on the main surface side of the sapphire wafer whose main surface is c-plane by an epitaxial growth method (for example, MOVPE method). Then, the sapphire wafer is removed, and then anisotropic etching is performed using a hydrochloric acid-based etchant utilizing the crystal orientation dependence of the etching rate. A hexagonal pyramid 11 is formed. In addition, as a ZnO wafer, what was manufactured using the hydrothermal synthesis method is used. The height of the cone 11 can be defined by the thickness of the ZnO wafer. In the present embodiment, the ZnO wafer having a thickness of 500 μm is used, so the height of the cone 11 is 500 μm. However, the thickness of the ZnO wafer is not particularly limited. In addition, the inclination angle of each side surface with respect to the lower surface (bottom surface) of the cone 11 is defined by the crystal axis direction of the ZnO wafer, and the above-described anisotropic etching is performed on the ZnO wafer having the c-plane main surface. Since the cone 11 is formed, the inclination angle of each side surface with respect to the lower surface is 60 °.

本実施形態の発光装置では、ＬＥＤ部１２がＺｎＯ結晶からなる錐体１１の下面側に形成され錐体１１よりもＬＥＤ部１２が実装基板２０に近くなる形で実装基板２０に実装されており、ＺｎＯはサファイアに比べて屈折率がＧａＮに近いので、ＬＥＤチップ１０からの光取り出し効率を高めることができる。なお、波長が４５０ｎｍの光に対するＺｎＯの屈折率は２．１、ＧａＮの屈折率は２．４、サファイアの屈折率は１．８、透光性封止部５０の材料であるシリコーン樹脂の屈折率は１．５である。 In the light emitting device of the present embodiment, the LED unit 12 is formed on the lower surface side of the cone 11 made of ZnO crystal, and the LED unit 12 is mounted on the mounting substrate 20 in a form closer to the mounting substrate 20 than the cone 11. Since ZnO has a refractive index close to that of GaN compared to sapphire, the light extraction efficiency from the LED chip 10 can be increased. In addition, the refractive index of ZnO with respect to light having a wavelength of 450 nm is 2.1, the refractive index of GaN is 2.4, the refractive index of sapphire is 1.8, and the refraction of the silicone resin that is the material of the light-transmitting sealing portion 50. The rate is 1.5.

上述の透光性封止部５０は、半球状の形状に形成されている。ここにおいて、透光性封止部５０の材料である透光性封止材としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、例えば、エポキシ樹脂、アクリル樹脂、ガラスなどを用いてもよい。 The above-described translucent sealing part 50 is formed in a hemispherical shape. Here, as a translucent sealing material which is a material of the translucent sealing part 50, although silicone resin is used, it is not restricted to silicone resin, For example, epoxy resin, acrylic resin, glass etc. are used. Also good.

色変換部材７０は、シリコーン樹脂のような透光性材料とＬＥＤチップ１０から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品であり、ドーム状に形成されている。したがって、本実施形態の発光装置は、ＬＥＤチップ１０から放射された青色光と黄色蛍光体から放射された光とが色変換部材７０の光出射面を通して放射されることとなり、白色光を得ることができる。なお、色変換部材７０の材料として用いる透光性材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、ガラス、有機成分と無機成分とがｎｍレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、色変換部材７０の材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。 The color conversion member 70 is a mixture of a translucent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10. It is a molded product and is formed in a dome shape. Therefore, in the light emitting device of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the light emitting surface of the color conversion member 70 to obtain white light. Can do. The translucent material used as the material of the color conversion member 70 is not limited to a silicone resin, but an organic / inorganic hybrid in which, for example, an acrylic resin, glass, an organic component and an inorganic component are mixed and combined at the nm level or the molecular level. Materials etc. may be adopted. Further, the phosphor mixed with the translucent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材７０は、光入射面が透光性封止部５０の光出射面に沿った形状に形成されている。したがって、透光性封止部５０の光出射面の位置によらず法線方向における透光性封止部５０の光出射面と色変換部材７０の光入射面との間の距離が略一定値となっている。なお、色変換部材７０は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。また、色変換部材７０は、実装基板２０側の端縁（開口部の周縁）を実装基板２０に対して、接着剤（例えば、シリコーン樹脂、エポキシ樹脂など）を用いて固着されている。 Here, the color conversion member 70 has a light incident surface formed in a shape along the light emitting surface of the translucent sealing portion 50. Therefore, the distance between the light emitting surface of the light transmitting sealing portion 50 and the light incident surface of the color conversion member 70 in the normal direction is substantially constant regardless of the position of the light emitting surface of the light transmitting sealing portion 50. It is a value. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. In addition, the color conversion member 70 is fixed to the mounting substrate 20 with an end edge (periphery of the opening) on the mounting substrate 20 side using an adhesive (for example, silicone resin, epoxy resin, or the like).

ところで、透光性封止部５０の光出射面は上述の空気層８０との境界でＬＥＤチップ１０からの光が全反射しないように凸曲面状に形成されており、ＬＥＤチップ１０と光軸が一致するように配置されている。したがって、ＬＥＤチップ１０から放射され透光性封止部５０に入射した光が透光性封止部５０の光出射面と空気層８０との境界で全反射されることなく色変換部材７０まで到達しやすくなり、全光束を高めることができる。 By the way, the light emitting surface of the translucent sealing portion 50 is formed in a convex curved surface so that the light from the LED chip 10 is not totally reflected at the boundary with the air layer 80 described above. Are arranged to match. Therefore, the light emitted from the LED chip 10 and incident on the light-transmitting sealing portion 50 is not totally reflected at the boundary between the light emitting surface of the light-transmitting sealing portion 50 and the air layer 80 and reaches the color conversion member 70. It becomes easy to reach and the total luminous flux can be increased.

以上説明した本実施形態の発光装置によれば、実装基板２０に実装されたＬＥＤチップ１０から放射される光によって励起されてＬＥＤチップ１０よりも長波長の光を放射する蛍光体を含有した透光性材料により形成され実装基板２０との間にＬＥＤチップ１０を囲む形で実装基板２０に固着された色変換部材７０を備え、ＬＥＤチップ１０は、ｎ形窒化物半導体層とｐ形窒化物半導体層とを有するＬＥＤ部１２、ｎ形窒化物半導体層に電気的に接続されたカソード電極１３ａおよびｐ形窒化物半導体層に電気的に接続されたアノード電極１３ｂがＺｎＯ結晶からなる六角錘状の錐体１１の下面側に形成され、錐体１１よりもＬＥＤ部１２が実装基板２０に近くなる形で実装基板２０に実装されているので、ＬＥＤチップ１０の出射光の広がり角を大きくすることができるから、色変換部材７０の局所的な温度上昇を抑制できて蛍光体の温度上昇による量子効率の低下を抑制でき、且つ、出射光の広がり角を大きくすることが可能になる。 According to the light emitting device of the present embodiment described above, a transparent material containing a phosphor that is excited by light emitted from the LED chip 10 mounted on the mounting substrate 20 and emits light having a longer wavelength than the LED chip 10. A color conversion member 70 formed of an optical material and fixed to the mounting substrate 20 so as to surround the LED chip 10 between the mounting substrate 20 and the LED chip 10 includes an n-type nitride semiconductor layer and a p-type nitride. The LED portion 12 having a semiconductor layer, the cathode electrode 13a electrically connected to the n-type nitride semiconductor layer, and the anode electrode 13b electrically connected to the p-type nitride semiconductor layer have a hexagonal pyramid shape made of ZnO crystals. Since the LED portion 12 is mounted on the mounting substrate 20 so as to be closer to the mounting substrate 20 than the cone 11, the emission light of the LED chip 10 is widened. Since the angle can be increased, the local temperature increase of the color conversion member 70 can be suppressed, the decrease in quantum efficiency due to the temperature increase of the phosphor can be suppressed, and the spread angle of the emitted light can be increased. become.

ここにおいて、単位立体角当たりの放射光強度が最大値に対して５０％以上となる角度範囲を光出射角（出射光の広がり角）と定義すると、本実施形態の発光装置では、ＬＥＤチップ１０の光出射角が１２０°以上であり、色変換部材７０から放射される混色光の光出射角も１２０°以上であり、広角配光を要求される一般照明用途に適した白色光源を実現することができる。 Here, when the angle range in which the emitted light intensity per unit solid angle is 50% or more with respect to the maximum value is defined as the light emission angle (the spread angle of the emitted light), in the light emitting device of this embodiment, the LED chip 10 The light emission angle of the mixed color light emitted from the color conversion member 70 is 120 ° or more, and a white light source suitable for general lighting applications requiring wide-angle light distribution is realized. be able to.

なお、実装基板２０に色変換部材７０で発生した熱をより効率的に放熱させるための伝熱部を絶縁性基板２０ａよりも熱伝導率の高い材料（例えば、Ｃｕ、Ａｌなど）により形成してもよく、このような熱伝導部を設ければ、色変換部材７０で発生した熱を実装基板２０において絶縁性基板２０ａよりも熱伝導率の高い伝熱部を通して効率的に放熱させることができるから、蛍光体の温度上昇をより抑制することができる。 In addition, the heat transfer part for more efficiently dissipating the heat generated in the color conversion member 70 on the mounting substrate 20 is formed of a material (for example, Cu, Al, etc.) having a higher thermal conductivity than the insulating substrate 20a. If such a heat conducting part is provided, the heat generated in the color conversion member 70 can be efficiently radiated through the heat conducting part having a higher thermal conductivity than the insulating substrate 20a in the mounting substrate 20. Therefore, the temperature rise of the phosphor can be further suppressed.

また、本実施形態の発光装置では、色変換部材７０と透光性封止部５０との間に空気層８０が存在しているので、ＬＥＤチップ１０から放射され透光性封止部５０、空気層８０を通して色変換部材７０に入射し当該色変換部材７０中の蛍光体により散乱された光のうちＬＥＤチップ１０側へ散乱されてＬＥＤチップ１０に吸収される光の光量を低減できて発光装置全体としての外部への光取り出し効率を向上できるという利点や、外部雰囲気中の水分がＬＥＤチップ１０に到達しにくくなるという利点がある。 Further, in the light emitting device of the present embodiment, since the air layer 80 exists between the color conversion member 70 and the translucent sealing part 50, the light transmitting device 50 radiated from the LED chip 10, Of the light that is incident on the color conversion member 70 through the air layer 80 and is scattered by the phosphor in the color conversion member 70, the amount of light scattered to the LED chip 10 side and absorbed by the LED chip 10 can be reduced to emit light. There is an advantage that the light extraction efficiency to the outside as the whole apparatus can be improved, and an advantage that moisture in the external atmosphere hardly reaches the LED chip 10.

また、本実施形態の発光装置では、色変換部材７０の透光性材料としてシリコーン樹脂を採用しているが、ガラスを採用すれば、シリコーン樹脂を採用している場合に比べて、色変換部材７０の熱伝導性が向上するので、蛍光体の温度上昇をより抑制できて光束を向上させることができ、しかも、水蒸気やＮＯ_ｘなど対するガスバリア性や耐透湿性が向上するとともに、蛍光体の吸湿劣化を抑制でき、信頼性および耐久性が向上する。 Further, in the light emitting device of the present embodiment, a silicone resin is employed as the translucent material of the color conversion member 70. However, if glass is employed, the color conversion member is compared with a case where a silicone resin is employed. As the thermal conductivity of 70 is improved, the temperature rise of the phosphor can be further suppressed, the luminous flux can be improved, and the gas barrier property and moisture permeability resistance against water vapor and NO _x are improved. Hygroscopic deterioration can be suppressed, and reliability and durability are improved.

また、本実施形態の発光装置では、透光性封止部５０をガラスにより形成すれば、透光性封止部５０がシリコーン樹脂などの有機材料により形成されている場合に比べて、色変換部材７０で発生した熱の伝熱経路に関して、色変換部材７０−空気層８０−透光性封止部５０−実装基板２０を通る伝熱経路の熱伝導性が向上し、色変換部材７０の温度上昇をより抑制することが可能となる。 Further, in the light emitting device of the present embodiment, when the translucent sealing part 50 is formed of glass, color conversion is performed as compared with the case where the translucent sealing part 50 is formed of an organic material such as a silicone resin. Regarding the heat transfer path of the heat generated in the member 70, the heat conductivity of the heat transfer path passing through the color conversion member 70 -the air layer 80 -the translucent sealing portion 50 -the mounting substrate 20 is improved. It becomes possible to further suppress the temperature rise.

また、本実施形態の発光装置は、実装基板２０の上記一表面側にＬＥＤチップ１０への給電用の配線パターン２３，２３を有しているので、実装基板２０を回路基板に実装することなく照明器具の器具本体と熱結合させることが可能となり、ＬＥＤチップ１０から器具本体までの熱抵抗を小さくできて放熱性が向上し、ＬＥＤチップ１０のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。 Moreover, since the light-emitting device of this embodiment has the wiring patterns 23 and 23 for the electric power feeding to the LED chip 10 in the said one surface side of the mounting board | substrate 20, without mounting the mounting board | substrate 20 on a circuit board. Since it is possible to thermally couple with the fixture body of the lighting fixture, the thermal resistance from the LED chip 10 to the fixture body can be reduced, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed. The optical output can be increased and the optical output can be increased.

（実施形態２）
本実施形態の発光装置の基本構成は実施形態１と略同じであり、図２に示すように、透光性封止部５０が六角錐状に形成され、色変換部材７０が下面開口した六角錐状の形状に形成されている点が相違する。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 2)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 2, the light-transmitting sealing portion 50 is formed in a hexagonal pyramid shape, and the color conversion member 70 is open on the lower surface. It is different in that it is formed in a pyramid shape. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態における透光性封止部５０および色変換部材７０は、ＬＥＤチップ１０の錐体１１と相似形状に形成されている。要するに、本実施形態では、透光性封止部５０の光出射面および色変換部材７０の光入射面がＬＥＤチップ１０の錐体１１の各側面に沿った形状に形成されている。したがって、ＬＥＤチップ１０の錐体１１の各側面の位置によらず、法線方向における透光性封止部５０の光出射面、色変換部材７０の光入射面までの距離がそれぞれ略一定値となっている。 The translucent sealing part 50 and the color conversion member 70 in this embodiment are formed in a similar shape to the cone 11 of the LED chip 10. In short, in this embodiment, the light emission surface of the translucent sealing part 50 and the light incident surface of the color conversion member 70 are formed in a shape along each side surface of the cone 11 of the LED chip 10. Therefore, regardless of the position of each side surface of the cone 11 of the LED chip 10, the distances to the light emitting surface of the translucent sealing portion 50 and the light incident surface of the color conversion member 70 in the normal direction are substantially constant values, respectively. It has become.

しかして、本実施形態の発光装置では、透光性封止部５０が六角錐状に形成され、色変換部材７０が下面開口した六角錐状の形状に形成されているので、ＬＥＤチップ１０の錐体１１から放射された光が色変換部材７０の光入射面で全反射されるのを抑制できてＬＥＤチップ１０からの光を色変換部材７０で効率良く色変換（波長変換）することができ、また、色変換部材７０の光入射面へのＬＥＤチップ１０からの光の入射光強度の均一化を図れ、色変換部材７０の局所的な温度上昇をより抑制することができ、蛍光体の量子効率を向上できる。 Thus, in the light emitting device of this embodiment, the translucent sealing portion 50 is formed in a hexagonal pyramid shape, and the color conversion member 70 is formed in a hexagonal pyramid shape having an opening on the lower surface. It is possible to suppress the light emitted from the cone 11 from being totally reflected by the light incident surface of the color conversion member 70 and to efficiently perform color conversion (wavelength conversion) on the light from the LED chip 10 by the color conversion member 70. In addition, the intensity of the incident light of the light from the LED chip 10 on the light incident surface of the color conversion member 70 can be made uniform, and the local temperature rise of the color conversion member 70 can be further suppressed, and the phosphor Quantum efficiency can be improved.

なお、本実施形態では、透光性封止部５０を六角錐状に形成し、色変換部材７０を下面開口した六角錐状の形状に形成してあるが、透光性封止部５０を円錐状に形成し、色変換部材７０を下面開口した円錐状の形状に形成してもよい。 In the present embodiment, the translucent sealing portion 50 is formed in a hexagonal pyramid shape, and the color conversion member 70 is formed in a hexagonal pyramid shape having an opening on the bottom surface. The color conversion member 70 may be formed in a conical shape with a lower surface opened.

（実施形態３）
本実施形態の発光装置の基本構成は実施形態２と略同じであり、実施形態２にて説明した透光性封止部５０が設けられておらず、図３に示すように、下面開口した六角錐状の色変換部材７０が、ＬＥＤチップ１０との間に空気層８０が形成される形で実装基板２０に固着されている点が相違する。なお、実施形態２と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 3)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the second embodiment, and the translucent sealing portion 50 described in the second embodiment is not provided, and the lower surface is opened as shown in FIG. A different point is that the hexagonal pyramid-shaped color conversion member 70 is fixed to the mounting substrate 20 in such a manner that an air layer 80 is formed between the color conversion member 70 and the LED chip 10. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

しかして、本実施形態の発光装置では、実施形態２のようにＬＥＤチップ１０を封止する透光性封止部５０を備え色変換部材７０と透光性封止部５０との間に空気層８０が形成されている場合に比べて、発光装置全体の小型化を図れ、また、ＬＥＤチップ１０から放射されて色変換部材７０に入射し色変換部材７０の蛍光体により散乱された光のうちＬＥＤチップ１０側へ散乱されてＬＥＤチップ１０に吸収される光の光量を低減できて外部への光取り出し効率を向上できる。 Therefore, in the light emitting device according to the present embodiment, the light-transmitting sealing portion 50 that seals the LED chip 10 as in Embodiment 2 is provided, and air is interposed between the color conversion member 70 and the light-transmitting sealing portion 50. Compared with the case where the layer 80 is formed, the entire light emitting device can be reduced in size, and the light emitted from the LED chip 10 and incident on the color conversion member 70 and scattered by the phosphor of the color conversion member 70 can be reduced. Among them, the amount of light scattered to the LED chip 10 side and absorbed by the LED chip 10 can be reduced, and the light extraction efficiency to the outside can be improved.

なお、本実施形態では、色変換部材７０を下面開口した六角錐状の形状に形成してあるが、色変換部材７０を下面開口した円錐状の形状に形成してもよい。 In the present embodiment, the color conversion member 70 is formed in a hexagonal pyramid shape with an opening on the lower surface, but the color conversion member 70 may be formed in a conical shape with an opening on the lower surface.

（実施形態４）
本実施形態の発光装置の基本構成は実施形態３と略同じであり、図４に示すように、色変換部材７０の内側面（光入射面）がＬＥＤチップ１０の錐体１１の外側面全体に接する大きさに形成されている点が相違する。なお、実施形態３と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 4)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the third embodiment. As shown in FIG. 4, the inner surface (light incident surface) of the color conversion member 70 is the entire outer surface of the cone 11 of the LED chip 10. It is different in that it is formed in a size that touches. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 3, and description is abbreviate | omitted.

しかして、本実施形態の発光装置では、色変換部材７０の内側面が錐体１１の外側面全体に接する大きさに形成されているので、実施形態２や実施形態３に比べて発光装置全体の小型化を図れるとともに、色変換部材７０の蛍光体で発生した熱を透光性封止部５０（図１，２参照）や空気層８０（図１〜図３参照）などを通さずに、直接、ＬＥＤチップ１０を通して実装基板２０へ放熱させることができて、蛍光体の温度上昇をより抑制できて、量子効率のより一層の向上を図れる。 Thus, in the light emitting device according to the present embodiment, the inner surface of the color conversion member 70 is formed in a size in contact with the entire outer surface of the cone 11, so that the entire light emitting device is compared with the second and third embodiments. The heat generated by the phosphor of the color conversion member 70 does not pass through the translucent sealing part 50 (see FIGS. 1 and 2), the air layer 80 (see FIGS. 1 to 3), and the like. In addition, heat can be directly radiated to the mounting substrate 20 through the LED chip 10, the temperature rise of the phosphor can be further suppressed, and the quantum efficiency can be further improved.

なお、上述の各実施形態では、ＬＥＤチップ１０の発光色を青色光としてあるが、ＬＥＤチップ１０の発光色は青色光に限らず、例えば、赤色光、緑色光、紫色光、紫外光などでもよい。 In each of the above-described embodiments, the emission color of the LED chip 10 is blue light. However, the emission color of the LED chip 10 is not limited to blue light, and may be, for example, red light, green light, purple light, ultraviolet light, or the like. Good.

実施形態１の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略斜視図である。The light-emitting device of Embodiment 1 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic perspective view. 実施形態２の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 実施形態３の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 3. FIG. 実施形態４の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 4. FIG. 従来例の発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device of a prior art example.

符号の説明Explanation of symbols

１０ＬＥＤチップ
１１錐体
１２ＬＥＤ部
１３ａカソード電極
１３ｂアノード電極
２０実装基板
２０ａ絶縁性基板
２３配線パターン
７０色変換部材
８０空気層 DESCRIPTION OF SYMBOLS 10 LED chip 11 Cone 12 LED part 13a Cathode electrode 13b Anode electrode 20 Mounting board 20a Insulating board 23 Wiring pattern 70 Color conversion member 80 Air layer

Claims

ＬＥＤチップと、当該ＬＥＤチップが実装された実装基板と、ＬＥＤチップから放射される光によって励起されてＬＥＤチップよりも長波長の光を放射する蛍光体を含有した透光性材料により形成され実装基板との間にＬＥＤチップを囲む形で実装基板に固着された色変換部材とを備え、ＬＥＤチップは、ｎ形窒化物半導体層とｐ形窒化物半導体層とを有するＬＥＤ部、ｎ形窒化物半導体層に電気的に接続されたカソード電極およびｐ形窒化物半導体層に電気的に接続されたアノード電極がＺｎＯ結晶からなる六角錘状の錐体の下面側に形成されてなり、当該錐体よりもＬＥＤ部が実装基板に近くなる形で実装基板に実装されてなることを特徴とする発光装置。 An LED chip, a mounting substrate on which the LED chip is mounted, and a translucent material containing a phosphor that emits light having a longer wavelength than the LED chip when excited by light emitted from the LED chip. And a color conversion member fixed to the mounting substrate so as to surround the LED chip between the substrate and the LED chip, the LED chip having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, n-type nitriding A cathode electrode electrically connected to the metal semiconductor layer and an anode electrode electrically connected to the p-type nitride semiconductor layer are formed on the lower surface side of a hexagonal pyramid cone made of ZnO crystal. A light-emitting device, wherein the LED portion is mounted on the mounting substrate in a form closer to the mounting substrate than the body.

前記色変換部材は、下面開口した六角錐状の形状に形成されてなることを特徴とする請求項１記載の発光装置。 The light emitting device according to claim 1, wherein the color conversion member is formed in a hexagonal pyramid shape having an opening on a lower surface.

前記色変換部材は、前記ＬＥＤチップとの間に空気層が形成される形で前記実装基板に固着されてなることを特徴とする請求項１または請求項２記載の発光装置。 3. The light emitting device according to claim 1, wherein the color conversion member is fixed to the mounting substrate in a form in which an air layer is formed between the color conversion member and the LED chip.

前記色変換部材は、内側面が前記錐体の外側面全体に接する大きさに形成されてなることを特徴とする請求項２記載の発光装置。 The light emitting device according to claim 2, wherein the color conversion member is formed to have a size in which an inner surface is in contact with the entire outer surface of the cone.