JP2010129993A - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
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- JP2010129993A JP2010129993A JP2008328572A JP2008328572A JP2010129993A JP 2010129993 A JP2010129993 A JP 2010129993A JP 2008328572 A JP2008328572 A JP 2008328572A JP 2008328572 A JP2008328572 A JP 2008328572A JP 2010129993 A JP2010129993 A JP 2010129993A
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- emitting diode
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- 229920005989 resin Polymers 0.000 claims abstract description 93
- 239000011347 resin Substances 0.000 claims abstract description 93
- 238000004806 packaging method and process Methods 0.000 claims abstract description 44
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000005192 partition Methods 0.000 claims abstract description 22
- 238000009877 rendering Methods 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 40
- 230000004888 barrier function Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
【解決手段】凹部と上記凹部を少なくとも第1収納溝及び第2収納溝に分ける隔壁を有するパッケージ本体と、上記第1及び第2収納溝の底面に夫々露出されるように上記パッケージ本体に形成された第1及び第2電極構造と、上記第1及び第2電極構造に電気的に接続され上記第1及び第2収納溝の底面に夫々実装された第1及び第2発光ダイオードチップと、少なくとも1つの蛍光体を含み第1及び第2発光ダイオードチップを包装するように上記第1及び第2収納溝に形成された第1及び第2樹脂包装部を含むことを特徴とする。
【選択図】図2
Description
101、211 隔壁
110 近紫外線発光ダイオードチップ
111 青色発光ダイオードチップ
210 近紫外線或いは青色発光ダイオードチップ
121、221 第1電極構造
122、222 第2電極構造
Claims (12)
- 凹部と、前記凹部を少なくとも第1収納溝及び第2収納溝に分ける隔壁を有するパッケージ本体と、
前記第1及び第2収納溝の底面に夫々露出されるように前記パッケージ本体に形成された第1及び第2電極構造と、
前記第1及び第2電極構造に電気的に接続され、前記第1及び第2収納溝の底面に夫々実装された第1及び第2発光ダイオードチップと、
少なくとも1つの蛍光体を含み第1及び第2発光ダイオードチップを包装するように前記第1及び第2収納溝に形成された第1及び第2樹脂包装部を含む発光ダイオードパッケージ。 - 前記第1及び第2発光ダイオードチップは近紫外線発光ダイオードチップであることを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記第1発光ダイオードチップを包装するように前記第1収納溝に形成された第1樹脂包装部は赤色の蛍光体を含み、
前記第2発光ダイオードチップを包装するように前記第2収納溝に形成された第2樹脂包装部は緑色及び青色の蛍光体を含むことを特徴とする請求項2に記載の発光ダイオードパッケージ。 - 前記第1及び第2発光ダイオードチップを包装するように前記第1及び第2収納溝に形成された第1及び第2樹脂包装部は赤色、緑色、および青色の蛍光体が混合され形成されることを特徴とする請求項2に記載の発光ダイオードパッケージ。
- 前記第1及び第2発光ダイオードチップを包装するように前記第1及び第2収納溝に形成された第1及び第2樹脂包装部は赤色、緑色、および青色の蛍光体が夫々含まれ順次に積層され形成されることを特徴とする請求項2に記載の発光ダイオードパッケージ。
- 前記第1及び第2発光ダイオードチップを包装するように前記第1及び第2収納溝に形成された第1及び第2樹脂包装部のうち少なくとも1つは第1或いは第2発光ダイオードチップを埋め込む透明樹脂層を含み、
前記透明樹脂層上に赤色、緑色、および青色の蛍光体が夫々含まれ順次に積層され形成されることを特徴とする請求項2に記載の発光ダイオードパッケージ。 - 前記第1発光ダイオードチップは近紫外線発光ダイオードチップで、
第2発光ダイオードチップは青色発光ダイオードチップであることを特徴とする請求項1に記載の発光ダイオードパッケージ。 - 前記第1発光ダイオードチップを包装するように第1収納溝に形成された第1樹脂包装部は赤色、緑色、および青色の蛍光体が混合されて形成され、
前記第2発光ダイオードチップを包装するように第2収納溝に形成された第2樹脂包装部は黄色の蛍光体が含まれることを特徴とする請求項7に記載の発光ダイオードパッケージ。 - 前記第1発光ダイオードチップを包装するように第1収納溝に形成された第1樹脂包装部は赤色、緑色、および青色の蛍光体が夫々含まれ順次に積層され形成され、
前記第2発光ダイオードチップを包装するように第2収納溝に形成された第2樹脂包装部は黄色の蛍光体が含まれて形成されることを特徴とする請求項7に記載の発光ダイオードパッケージ。 - 前記第1発光ダイオードチップを包装するように第1収納溝に形成された第1樹脂包装部は第1発光ダイオードチップを埋め込む透明樹脂層を含み、前記透明樹脂層上に赤色、緑色、および青色の蛍光体が混合されて形成され、
前記第2発光ダイオードチップを包装するように第2収納溝に形成された第2樹脂包装部は第2発光ダイオードチップを埋め込む透明樹脂層を含み、前記透明樹脂層上に黄色の蛍光体が含まれて形成されることを特徴とする請求項7に記載の発光ダイオードパッケージ。 - 前記第1発光ダイオードチップを包装するように第1収納溝に形成された第1樹脂包装部は第1発光ダイオードチップを埋め込む透明樹脂層を含み、前記透明樹脂層上に赤色、緑色、および青色の蛍光体が夫々含まれ順次に積層され形成され、
前記第2発光ダイオードチップを包装するように第2収納溝に形成された第2樹脂包装部は第2発光ダイオードチップを埋め込む透明樹脂層を含み、前記透明樹脂層上に黄色の蛍光体が含まれて形成されることを特徴とする請求項7に記載の発光ダイオードパッケージ。 - 前記隔壁は傾いた面を有することを特徴とする請求項1から請求項11の何れかに記載の発光ダイオードパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0119189 | 2008-11-27 | ||
KR1020080119189A KR101018153B1 (ko) | 2008-11-27 | 2008-11-27 | Led 패키지 |
Publications (2)
Publication Number | Publication Date |
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JP2010129993A true JP2010129993A (ja) | 2010-06-10 |
JP5026404B2 JP5026404B2 (ja) | 2012-09-12 |
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ID=42196068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008328572A Active JP5026404B2 (ja) | 2008-11-27 | 2008-12-24 | Ledパッケージ |
Country Status (3)
Country | Link |
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US (1) | US8558268B2 (ja) |
JP (1) | JP5026404B2 (ja) |
KR (1) | KR101018153B1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012039121A (ja) * | 2010-08-09 | 2012-02-23 | Lg Innotek Co Ltd | 発光素子 |
JP2012039120A (ja) * | 2010-08-09 | 2012-02-23 | Lg Innotek Co Ltd | 発光素子 |
WO2012121304A1 (ja) * | 2011-03-08 | 2012-09-13 | 三菱化学株式会社 | 発光装置及び発光装置を備えた照明装置 |
WO2012124509A1 (ja) * | 2011-03-11 | 2012-09-20 | シャープ株式会社 | 光源、照明装置及び表示装置 |
JP2015079924A (ja) * | 2013-10-18 | 2015-04-23 | シチズン電子株式会社 | 半導体発光装置 |
JP2015528210A (ja) * | 2012-08-24 | 2015-09-24 | コーニンクレッカ フィリップス エヌ ヴェ | 発光アセンブリ、ランプ及び照明器具 |
JP2019519909A (ja) * | 2016-04-29 | 2019-07-11 | ルミレッズ ホールディング ベーフェー | 高輝度明白色led光源 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI399873B (zh) * | 2009-03-03 | 2013-06-21 | Everlight Electronics Co Ltd | 發光二極體封裝結構及其製作方法 |
US20110089448A1 (en) * | 2009-10-20 | 2011-04-21 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Single Encapsulant For A Plurality Of Light Sources |
JP5623062B2 (ja) | 2009-11-13 | 2014-11-12 | シャープ株式会社 | 発光装置およびその製造方法 |
WO2011126135A1 (ja) | 2010-04-09 | 2011-10-13 | ローム株式会社 | Ledモジュール |
TWI476961B (zh) * | 2010-10-12 | 2015-03-11 | 友達光電股份有限公司 | 發光二極體裝置 |
CN102427075B (zh) * | 2010-10-12 | 2013-08-21 | 友达光电股份有限公司 | 发光二极管装置及场序显示器 |
US8899767B2 (en) * | 2011-03-31 | 2014-12-02 | Xicato, Inc. | Grid structure on a transmissive layer of an LED-based illumination module |
KR101852388B1 (ko) | 2011-04-28 | 2018-04-26 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US8901578B2 (en) * | 2011-05-10 | 2014-12-02 | Rohm Co., Ltd. | LED module having LED chips as light source |
US8814378B2 (en) * | 2011-12-05 | 2014-08-26 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | LCD device and LED package structure thereof |
KR101993346B1 (ko) | 2012-02-16 | 2019-06-26 | 엘지이노텍 주식회사 | 조명 장치 및 그의 설계 방법 |
EP2650918A1 (en) * | 2012-04-10 | 2013-10-16 | Koninklijke Philips N.V. | Light emitting module |
RU2662240C2 (ru) | 2013-08-01 | 2018-07-25 | Филипс Лайтинг Холдинг Б.В. | Светоизлучающая структура с адаптированным выходным спектром |
US20160141276A1 (en) * | 2014-11-14 | 2016-05-19 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Light-emitting structure for providing predetermined whiteness |
US9917076B2 (en) | 2016-06-16 | 2018-03-13 | Allix Co., Ltd. | LED package |
KR101897007B1 (ko) * | 2016-11-08 | 2018-09-12 | 주식회사 올릭스 | 엘이디 패키지 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006286935A (ja) * | 2005-03-31 | 2006-10-19 | Sharp Corp | 光源モジュール、バックライトユニット、液晶表示装置 |
JP2008060129A (ja) * | 2006-08-29 | 2008-03-13 | Nec Lighting Ltd | フルカラー発光ダイオード |
JP2008108835A (ja) * | 2006-10-24 | 2008-05-08 | Harison Toshiba Lighting Corp | 半導体発光装置及びその製造方法 |
JP2008140934A (ja) * | 2006-11-30 | 2008-06-19 | Toshiba Lighting & Technology Corp | 発光ダイオード装置及び照明装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6600175B1 (en) * | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
JP3466956B2 (ja) * | 1999-04-28 | 2003-11-17 | キヤノン株式会社 | 画像形成装置 |
US6513949B1 (en) * | 1999-12-02 | 2003-02-04 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
US6583550B2 (en) * | 2000-10-24 | 2003-06-24 | Toyoda Gosei Co., Ltd. | Fluorescent tube with light emitting diodes |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
DE10145701A1 (de) * | 2001-09-17 | 2003-04-10 | Infineon Technologies Ag | Fluoreszenz-Biosensorchip und Fluoreszenz-Biosensorchip-Anordnung |
EP1361594A3 (en) * | 2002-05-09 | 2005-08-31 | Lg Electronics Inc. | Plasma display panel |
US6871982B2 (en) * | 2003-01-24 | 2005-03-29 | Digital Optics International Corporation | High-density illumination system |
US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
JP4414771B2 (ja) * | 2004-01-08 | 2010-02-10 | オリンパス株式会社 | 共焦点顕微分光装置 |
JP2006114854A (ja) | 2004-10-18 | 2006-04-27 | Sharp Corp | 半導体発光装置、液晶表示装置用のバックライト装置 |
US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
EP1899765A4 (en) * | 2005-05-31 | 2011-01-12 | Seiko Epson Corp | LIGHTING ARRANGEMENTS FOR COLORED LIGHT SOURCES |
JP2007036041A (ja) | 2005-07-28 | 2007-02-08 | Sony Corp | 発光装置及び光学装置 |
KR100678197B1 (ko) * | 2005-09-23 | 2007-02-02 | 삼성전자주식회사 | 키패드의 백라이팅 장치 |
US7547114B2 (en) * | 2007-07-30 | 2009-06-16 | Ylx Corp. | Multicolor illumination device using moving plate with wavelength conversion materials |
KR100924912B1 (ko) * | 2008-07-29 | 2009-11-03 | 서울반도체 주식회사 | 웜화이트 발광장치 및 그것을 포함하는 백라이트 모듈 |
-
2008
- 2008-11-27 KR KR1020080119189A patent/KR101018153B1/ko active IP Right Grant
- 2008-12-23 US US12/343,452 patent/US8558268B2/en active Active
- 2008-12-24 JP JP2008328572A patent/JP5026404B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006286935A (ja) * | 2005-03-31 | 2006-10-19 | Sharp Corp | 光源モジュール、バックライトユニット、液晶表示装置 |
JP2008060129A (ja) * | 2006-08-29 | 2008-03-13 | Nec Lighting Ltd | フルカラー発光ダイオード |
JP2008108835A (ja) * | 2006-10-24 | 2008-05-08 | Harison Toshiba Lighting Corp | 半導体発光装置及びその製造方法 |
JP2008140934A (ja) * | 2006-11-30 | 2008-06-19 | Toshiba Lighting & Technology Corp | 発光ダイオード装置及び照明装置 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012039121A (ja) * | 2010-08-09 | 2012-02-23 | Lg Innotek Co Ltd | 発光素子 |
JP2012039120A (ja) * | 2010-08-09 | 2012-02-23 | Lg Innotek Co Ltd | 発光素子 |
WO2012121304A1 (ja) * | 2011-03-08 | 2012-09-13 | 三菱化学株式会社 | 発光装置及び発光装置を備えた照明装置 |
WO2012124509A1 (ja) * | 2011-03-11 | 2012-09-20 | シャープ株式会社 | 光源、照明装置及び表示装置 |
JP2015528210A (ja) * | 2012-08-24 | 2015-09-24 | コーニンクレッカ フィリップス エヌ ヴェ | 発光アセンブリ、ランプ及び照明器具 |
US9772071B2 (en) | 2012-08-24 | 2017-09-26 | Philips Lighting Holding B.V. | Light emitting assembly, a lamp and a luminaire |
JP2015079924A (ja) * | 2013-10-18 | 2015-04-23 | シチズン電子株式会社 | 半導体発光装置 |
JP2019519909A (ja) * | 2016-04-29 | 2019-07-11 | ルミレッズ ホールディング ベーフェー | 高輝度明白色led光源 |
JP7221052B2 (ja) | 2016-04-29 | 2023-02-13 | ルミレッズ ホールディング ベーフェー | 高輝度明白色led光源 |
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KR101018153B1 (ko) | 2011-02-28 |
JP5026404B2 (ja) | 2012-09-12 |
US20100128461A1 (en) | 2010-05-27 |
KR20100060557A (ko) | 2010-06-07 |
US8558268B2 (en) | 2013-10-15 |
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