JP2010109375A5 - - Google Patents
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- Publication number
- JP2010109375A5 JP2010109375A5 JP2009276412A JP2009276412A JP2010109375A5 JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5 JP 2009276412 A JP2009276412 A JP 2009276412A JP 2009276412 A JP2009276412 A JP 2009276412A JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- radiation beam
- laser annealing
- preheating
- incident
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 23
- 238000005224 laser annealing Methods 0.000 claims 9
- 230000000875 corresponding Effects 0.000 claims 5
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 125000004429 atoms Chemical group 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/762,861 US7098155B2 (en) | 2003-09-29 | 2004-01-22 | Laser thermal annealing of lightly doped silicon substrates |
| US10/762,861 | 2004-01-22 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005013255A Division JP4843225B2 (ja) | 2004-01-22 | 2005-01-20 | 低濃度ドープされたシリコン基板のレーザ熱アニール |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010109375A JP2010109375A (ja) | 2010-05-13 |
| JP2010109375A5 true JP2010109375A5 (it) | 2012-03-29 |
| JP5094825B2 JP5094825B2 (ja) | 2012-12-12 |
Family
ID=34911265
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005013255A Expired - Fee Related JP4843225B2 (ja) | 2004-01-22 | 2005-01-20 | 低濃度ドープされたシリコン基板のレーザ熱アニール |
| JP2009276412A Expired - Fee Related JP5094825B2 (ja) | 2004-01-22 | 2009-12-04 | 低濃度ドープされたシリコン基板のレーザ熱アニール |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005013255A Expired - Fee Related JP4843225B2 (ja) | 2004-01-22 | 2005-01-20 | 低濃度ドープされたシリコン基板のレーザ熱アニール |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP4843225B2 (it) |
| KR (1) | KR100699211B1 (it) |
| TW (1) | TWI297521B (it) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5073260B2 (ja) * | 2006-09-29 | 2012-11-14 | 日立コンピュータ機器株式会社 | レーザアニール装置及びレーザアニール方法 |
| US20080206897A1 (en) * | 2007-02-27 | 2008-08-28 | Woo Sik Yoo | Selective Depth Optical Processing |
| US20090114630A1 (en) * | 2007-11-05 | 2009-05-07 | Hawryluk Andrew M | Minimization of surface reflectivity variations |
| US20100068898A1 (en) | 2008-09-17 | 2010-03-18 | Stephen Moffatt | Managing thermal budget in annealing of substrates |
| KR101800404B1 (ko) | 2008-09-17 | 2017-11-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 어닐링시 열량 관리 |
| US20100084744A1 (en) * | 2008-10-06 | 2010-04-08 | Zafiropoulo Arthur W | Thermal processing of substrates with pre- and post-spike temperature control |
| JP5541693B2 (ja) * | 2010-03-25 | 2014-07-09 | 株式会社日本製鋼所 | レーザアニール装置 |
| JP5614768B2 (ja) * | 2010-03-25 | 2014-10-29 | 株式会社日本製鋼所 | レーザ処理装置およびレーザ処理方法 |
| US8014427B1 (en) | 2010-05-11 | 2011-09-06 | Ultratech, Inc. | Line imaging systems and methods for laser annealing |
| JP5617421B2 (ja) * | 2010-08-06 | 2014-11-05 | Ｊｆｅスチール株式会社 | 電子ビーム照射装置 |
| US8026519B1 (en) * | 2010-10-22 | 2011-09-27 | Ultratech, Inc. | Systems and methods for forming a time-averaged line image |
| JP5786557B2 (ja) * | 2011-08-25 | 2015-09-30 | 株式会社Sumco | シミュレーションによるレーザースパイクアニールを施す際に生じる酸素析出物からの発生転位予測方法 |
| US8546805B2 (en) * | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
| SG195515A1 (en) * | 2012-06-11 | 2013-12-30 | Ultratech Inc | Laser annealing systems and methods with ultra-short dwell times |
| US9823121B2 (en) * | 2014-10-14 | 2017-11-21 | Kla-Tencor Corporation | Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line |
| JP6452564B2 (ja) * | 2015-07-15 | 2019-01-16 | 住友重機械工業株式会社 | レーザアニール装置及びレーザアニール方法 |
| SG10201605683WA (en) | 2015-07-22 | 2017-02-27 | Ultratech Inc | High-efficiency line-forming optical systems and methods using a serrated spatial filter |
| US10256005B2 (en) * | 2015-07-29 | 2019-04-09 | Applied Materials, Inc. | Rotating substrate laser anneal |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629323A (en) * | 1979-08-17 | 1981-03-24 | Nec Corp | Two-wavelength laser surface treating apparatus |
| JPS57104217A (en) * | 1980-12-22 | 1982-06-29 | Toshiba Corp | Surface heat treatment |
| JPS57183024A (en) * | 1981-05-02 | 1982-11-11 | Fujitsu Ltd | Laser annealing |
| JPS57183023A (en) * | 1981-05-02 | 1982-11-11 | Fujitsu Ltd | Laser annealing |
| JPS57111020A (en) * | 1981-11-16 | 1982-07-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60117617A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH01173707A (ja) * | 1987-12-28 | 1989-07-10 | Matsushita Electric Ind Co Ltd | レーザアニール方法 |
| JPH03266424A (ja) * | 1990-03-16 | 1991-11-27 | Sony Corp | 半導体基板のアニール方法 |
| JPH0521340A (ja) * | 1991-07-10 | 1993-01-29 | Ricoh Co Ltd | 薄膜半導体装置、その製法および製造装置 |
| JPH0883765A (ja) * | 1994-07-14 | 1996-03-26 | Sanyo Electric Co Ltd | 多結晶半導体膜の製造方法 |
| JP2000012461A (ja) * | 1998-06-17 | 2000-01-14 | Matsushita Electric Ind Co Ltd | 結晶質半導体薄膜の作製方法 |
| JP2000012484A (ja) * | 1998-06-25 | 2000-01-14 | Mitsubishi Electric Corp | レーザアニール装置 |
| JP3185881B2 (ja) * | 1998-10-28 | 2001-07-11 | 日本電気株式会社 | レーザ照射装置およびレーザ照射方法 |
| JP2001156017A (ja) * | 1999-11-29 | 2001-06-08 | Semiconductor Energy Lab Co Ltd | レーザー装置及びレーザー光を用いた熱処理方法並びに半導体装置の作製方法 |
| US7015422B2 (en) * | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| JP2002217125A (ja) * | 2001-01-23 | 2002-08-02 | Sumitomo Heavy Ind Ltd | 表面処理装置及び方法 |
| JP2003347237A (ja) * | 2002-05-30 | 2003-12-05 | Mitsubishi Electric Corp | 半導体装置の製造方法およびその製造装置 |
| JP2004128421A (ja) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
-
2005
- 2005-01-19 TW TW094101533A patent/TWI297521B/zh not_active IP Right Cessation
- 2005-01-20 JP JP2005013255A patent/JP4843225B2/ja not_active Expired - Fee Related
- 2005-01-21 KR KR1020050005988A patent/KR100699211B1/ko active IP Right Grant
-
2009
- 2009-12-04 JP JP2009276412A patent/JP5094825B2/ja not_active Expired - Fee Related
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