JP2010085304A - X-ray reflection device and method for manufacturing the same - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000011553 magnetic fluid Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000001312 dry etching Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 20
- 238000005498 polishing Methods 0.000 claims description 8
- 238000009499 grossing Methods 0.000 claims description 6
- 239000004033 plastic Substances 0.000 abstract description 7
- 238000003384 imaging method Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 29
- 238000005530 etching Methods 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004452 microanalysis Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004454 trace mineral analysis Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
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Abstract
Description
本発明は、宇宙空間におけるＸ線観測機器、あるいは地上における放射線計測や微量分析装置に利用されるＸ線反射装置及びその製造方法に関する。 The present invention relates to an X-ray observation apparatus in outer space, an X-ray reflection apparatus used for radiation measurement and a microanalysis apparatus on the ground, and a manufacturing method thereof.
Ｘ線は、可視光とは異なり、直入射光学系の利用が困難である。このため、金属のＸ線に対する屈折率が１よりも小さいことを利用した金属面の全反射による斜入射光学系が用いられている。この場合の全反射の臨界角は１度程度と小さいため、反射面の有効面積を大きくとるために、直径の異なる金属製の円筒状の反射鏡を、同軸状に多数配置する方法が知られている。しかしながら、この方法ではＸ線反射装置全体の重量が増大するため、宇宙空間で利用する場合に、地上からの輸送に支障を来すという問題があった。 Unlike visible light, X-rays are difficult to use with a direct incidence optical system. For this reason, an oblique incident optical system using total reflection of a metal surface utilizing the fact that the refractive index of metal with respect to X-rays is smaller than 1 is used. In this case, since the critical angle of total reflection is as small as about 1 degree, in order to increase the effective area of the reflecting surface, a method of arranging a large number of metallic cylindrical reflecting mirrors having different diameters coaxially is known. ing. However, since this method increases the weight of the entire X-ray reflection device, there is a problem in that it hinders transportation from the ground when used in outer space.
また、Ｘ線反射装置は、一定以上の反射率を確保するために、反射鏡の表面がＸ線の波長と同程度まで滑らかである必要がある。このため、これまでのＸ線反射装置は、表面を滑らかにするために反射面を研磨する必要があった。これまでは、研磨成形した母型に薄膜を押しつけて作ったレプリカ鏡を多数用意するなどして、一枚一枚の鏡を作成する手間がかかっていた（非特許文献１参照）。さらに、近年、ガラスファイバをＸ線導波管として使うＸ線光学系も実用化されているが、ガラスファイバが高価であるため全体としてのコスト増につながる（非特許文献２参照）。 Further, the X-ray reflection device needs to have a smooth surface to the same extent as the wavelength of X-rays in order to ensure a certain reflectance. For this reason, the conventional X-ray reflectors need to polish the reflecting surface in order to smooth the surface. Until now, it took time and effort to prepare each mirror by preparing a large number of replica mirrors made by pressing a thin film against a polished mold (see Non-Patent Document 1). Furthermore, in recent years, an X-ray optical system using a glass fiber as an X-ray waveguide has been put into practical use. However, since the glass fiber is expensive, it leads to an increase in cost as a whole (see Non-Patent Document 2).
そこで、本出願の発明者らは、異方性エッチングを行ったシリコンウェハの断面を用いるＸ線光学系を提案した（特許文献１、非特許文献３）。これはは、厚みがミクロンオーダーの薄いシリコンウェハに１０μｍレベルのエッチングにより細かい穴を開け、エッチングで得られた滑らかな側壁を反射面として使う。このような方法を用いることにより、一度のエッチングで多数の鏡を簡単に形成できる。しかも、前述のようにウェハが薄いため、このようなＸ線光学系を用いてＸ線反射鏡を製作することによって、全体の重量を一桁以上軽量化することが可能となる。 Therefore, the inventors of the present application have proposed an X-ray optical system using a cross section of a silicon wafer subjected to anisotropic etching (Patent Document 1, Non-Patent Document 3). In this method, a fine hole is formed in a thin silicon wafer having a thickness of the order of microns by etching at a level of 10 μm, and a smooth side wall obtained by the etching is used as a reflecting surface. By using such a method, a large number of mirrors can be easily formed by one etching. In addition, since the wafer is thin as described above, the overall weight can be reduced by an order of magnitude or more by manufacturing an X-ray reflecting mirror using such an X-ray optical system.
しかしながら、異方性エッチングで形成できる穴は、直線的なスリット状の穴に限られるため、上記のようなＸ線光学系を作る際には、理想曲面を直線で近似する必要があり、結果として、結像性能が制限される。また、理想曲面に近づけるために、上記のようなＸ線光学系を小さくして理想曲面に沿って配置することになるので、多数のＸ線光学系が必要になるという問題もある。 However, since holes that can be formed by anisotropic etching are limited to straight slit-shaped holes, it is necessary to approximate the ideal curved surface with a straight line when creating an X-ray optical system as described above. As a result, the imaging performance is limited. Further, since the X-ray optical system as described above is made smaller and arranged along the ideal curved surface in order to approach the ideal curved surface, there is a problem that a large number of X-ray optical systems are required.
本発明は、このような背景のもとになされたものであり、従来のＸ線反射装置の利点を備えつつ、さらに直線的なスリットを形成したＸ線反射装置の欠点を解消することのできるＸ線反射装置を提供することを目的とする。 The present invention has been made based on such a background, and can solve the disadvantages of the X-ray reflecting apparatus in which a straight slit is formed while having the advantages of the conventional X-ray reflecting apparatus. An object is to provide an X-ray reflection device.
本発明のＸ線反射装置の製造方法は、シリコンウェハをドライエッチングして、複数の曲線状のスリットを形成する工程と、前記複数のスリットの各側壁を磁性流体を使った研磨して、Ｘ線反射面を形成する工程とを含むことを特徴とする。 According to the method of manufacturing the X-ray reflection device of the present invention, a silicon wafer is dry-etched to form a plurality of curved slits, and each side wall of the plurality of slits is polished using a magnetic fluid, Forming a line reflecting surface.
本発明のＸ線反射装置の製造方法は、さらに、Ｘ線反射面の形成後に、シリコンウェハ全体を塑性変形して曲面状にする工程を含む。 The manufacturing method of the X-ray reflecting device of the present invention further includes a step of plastically deforming the entire silicon wafer to form a curved surface after forming the X-ray reflecting surface.
本発明のＸ線反射装置は、シリコンウェハと、前記シリコンウェハに同心円状に設けられた複数の曲線状のスリットと、前記各スリットの側壁をＸ線の反射が可能な程度まで平滑化して得られるＸ線反射面とを含むことを特徴とする。 The X-ray reflection device of the present invention is obtained by smoothing a silicon wafer, a plurality of curved slits concentrically provided on the silicon wafer, and the side walls of the slits to the extent that X-rays can be reflected. And an X-ray reflecting surface.
本発明の曲面状Ｘ線反射装置は、さらに、前記Ｘ線反射装置を、曲面を含む所定の形状に塑性変形したことを特徴とする。 The curved X-ray reflector of the present invention is further characterized in that the X-ray reflector is plastically deformed into a predetermined shape including a curved surface.
本発明のＸ線光学装置は、前記曲面状Ｘ線反射装置を複数配置したことを特徴とする。 The X-ray optical apparatus of the present invention is characterized in that a plurality of the curved X-ray reflection devices are arranged.
本発明のＸ線反射装置の製造方法は、Ｘ線ＬＩＧＡプロセスで、複数の曲線状のスリットが形成された金属基板を形成する工程と、前記複数のスリットの各側壁を磁性流体を使った研磨して、Ｘ線反射面を形成する工程とを含むことを特徴とする。 The manufacturing method of the X-ray reflecting device of the present invention includes a step of forming a metal substrate on which a plurality of curved slits are formed by an X-ray LIGA process, and polishing each side wall of the plurality of slits using a magnetic fluid. And a step of forming an X-ray reflecting surface.
本発明のＸ線反射装置の製造方法は、さらに、Ｘ線反射面の形成後に、金属基板全体を塑性変形又は弾性変形して曲面を含む所定の形状にする工程を含む。 The manufacturing method of the X-ray reflecting device of the present invention further includes a step of plastically deforming or elastically deforming the entire metal substrate to form a predetermined shape including a curved surface after forming the X-ray reflecting surface.
本発明のＸ線反射装置は、金属基板と、前記金属基板に同心円状に設けられた複数の曲線状のスリットと、前記各スリットの側壁をＸ線の反射が可能な程度まで平滑化して得られるＸ線反射面とを含むことを特徴とする。 The X-ray reflection device of the present invention is obtained by smoothing a metal substrate, a plurality of curved slits concentrically provided on the metal substrate, and the side walls of the slits to the extent that X-rays can be reflected. And an X-ray reflecting surface.
本発明の曲面状Ｘ線反射装置は、前記Ｘ線反射装置を曲面状に塑性変形又は弾性変形したことを特徴とする。 The curved X-ray reflector of the present invention is characterized in that the X-ray reflector is plastically deformed or elastically deformed into a curved surface.
本発明のＸ線光学装置は、前記曲面状Ｘ線反射装置を複数配置したことを特徴とする。 The X-ray optical apparatus of the present invention is characterized in that a plurality of the curved X-ray reflection devices are arranged.
本発明によれば、Ｘ線反射に必要な平滑度を有する曲面を含む所定の形状の反射面を含むＸ線反射鏡を一括して大量に製作することができるので、Ｘ線反射鏡の製作コストを大幅に下げることができる。また、特にシリコンウェハの場合は非常に薄くすることができるので、重量を大幅に下げることができ、重量制限が厳しい宇宙用途に好適である。また、多数の鏡を用意してこれを正確に並べるという手間が省けるため、製作効率が向上する。さらに、曲線状のスリット構造の形成とその後の曲面状、例えば曲面状への変形により、理由曲面に近いＸ線光学系を構成できるため、従来の技術に比べ、結像性能が大幅に向上する。 According to the present invention, a large number of X-ray reflecting mirrors including a reflecting surface having a predetermined shape including a curved surface having smoothness necessary for X-ray reflection can be manufactured in large quantities. Cost can be greatly reduced. In particular, in the case of a silicon wafer, it can be made very thin, so that the weight can be greatly reduced, and it is suitable for space applications where the weight limit is severe. In addition, since it is possible to save the trouble of preparing a large number of mirrors and arranging them accurately, the production efficiency is improved. Furthermore, since the X-ray optical system close to the reason curved surface can be configured by forming a curved slit structure and then deforming it into a curved surface, for example, a curved surface, the imaging performance is greatly improved compared to the conventional technology. .
以下に図面を参照しながら、本発明の実施の形態について説明する。図１（Ａ）は、シリコンウェハに、ドライエッチングで多数の曲線状のスリットを形成した状態を示した平面図であり、同図（Ｂ）は、同図（Ａ）線Ｘ−Ｘに沿って切った断面図である。ウェハの厚さは、一例として３００〜１０００μｍ程度である。各スリットは、同心円状にシリコンウェハを貫通するように形成されており、その幅は一例として５〜２０μｍ程度である。 Embodiments of the present invention will be described below with reference to the drawings. FIG. 1A is a plan view showing a state in which a number of curved slits are formed on a silicon wafer by dry etching, and FIG. 1B is along the line XX in FIG. It is sectional drawing cut off. The thickness of the wafer is, for example, about 300 to 1000 μm. Each slit is formed concentrically so as to penetrate the silicon wafer, and its width is about 5 to 20 μm as an example.
図１のようなスリットは、シリコンウェハの表面にマスクを塗布し、これをパターニングした後、ドライエッチングプロセスによりウェハ表面と垂直な方向にエッチングすることによって一括して形成される。各スリットの側壁は、円筒形の側面の一部からなる曲面である。ドライエッチングによって得られるスリットの各側壁の面粗さは、せいぜい１０ｎｍ程度であり、異方性エッチングを用いた場合に比べて１桁程度悪い（非特許文献４参照）。 The slits as shown in FIG. 1 are collectively formed by applying a mask to the surface of a silicon wafer, patterning it, and then etching in a direction perpendicular to the wafer surface by a dry etching process. The side wall of each slit is a curved surface formed of a part of a cylindrical side surface. The surface roughness of each side wall of the slit obtained by dry etching is at most about 10 nm, which is about an order of magnitude worse than when anisotropic etching is used (see Non-Patent Document 4).
そこで、本実施形態では、各スリットの側壁を平滑化するために、磁性流体を用いる。磁性流体は、磁場を印加することで粘性が変化する流体であり、既に光学部品の研磨などに実用化されている（非特許文献６参照）。具体的には、磁性流体と研磨材の混合液を各スリットに流し込み、図２に示すように、シリコンウェハと垂直に変動磁場を印加する。前記混合液は磁場の変動に合わせてスリット内をランダムに移動する。シリコンウェハを中心軸の周りに回転させて、前記混合液とスリットの側壁との相対運動を促進することも可能である。こうすることにより、前記混合液が各スリットの側壁面を研磨し、表面の粗さを平滑化することができる。このような方法でドライエッチングによって形成したスリットの側壁を研磨することによって、ｎｍレベルもしくはそれ以下の面粗さを実現することができる（非特許文献６参照）。 Therefore, in this embodiment, a magnetic fluid is used to smooth the side walls of each slit. A magnetic fluid is a fluid whose viscosity changes when a magnetic field is applied, and has already been put into practical use for polishing optical components (see Non-Patent Document 6). Specifically, a mixed liquid of magnetic fluid and abrasive is poured into each slit, and a varying magnetic field is applied perpendicular to the silicon wafer as shown in FIG. The liquid mixture moves randomly in the slit according to the fluctuation of the magnetic field. It is also possible to rotate the silicon wafer around the central axis to promote relative movement between the mixed solution and the side wall of the slit. By carrying out like this, the said liquid mixture can grind | polish the side wall surface of each slit, and can smooth the surface roughness. By polishing the side wall of the slit formed by dry etching by such a method, a surface roughness of the nm level or less can be realized (see Non-Patent Document 6).
混合液としては、例えば平均粒径0.01 μｍの四三酸化鉄水分散体（フェリコロイドＷ４０、タイホー工業株式会社製、固形分４０重量％）と粒径０−１／２μｍのダイヤモンドスラリーを用い、スリットに流し込む。加工部に適当な強さの交流磁場（０．7 Ａ、周波数２０Hz）を印加することで、前記混合液は磁場に感応してスリット内を移動し、即壁面を１〜２ｎｍの面粗さに研磨加工できる。 As the mixed liquid, for example, a triiron tetroxide aqueous dispersion having an average particle size of 0.01 μm (ferricolloid W40, Taiho Kogyo Co., Ltd., solid content 40% by weight) and a diamond slurry having a particle size of 0-1 / 2 μm are used. Pour into the slit. By applying an alternating magnetic field (0.7 A, frequency 20 Hz) of an appropriate strength to the processed part, the mixture moves in the slit in response to the magnetic field, and immediately has a surface roughness of 1 to 2 nm on the wall surface. Can be polished.
なお、この磁性流体による研磨の際に、水素アニールを併せて行うことにより、さらなる平滑化が可能である（非特許文献７参照）。 Note that further smoothing is possible by performing hydrogen annealing together with polishing with the magnetic fluid (see Non-Patent Document 7).
このようにして平滑度を向上させたスリットの側壁は、Ｘ線反射面として機能する。ただし、この状態のＸ線反射面はウェハの表面と垂直であるため、点源からのＸ線を別の一点に収束させるＸ線反射鏡としては使用可能であるが、宇宙Ｘ線観測に必要な、平行Ｘ線を点に集光する目的には使用できない。 The side wall of the slit thus improved in smoothness functions as an X-ray reflecting surface. However, since the X-ray reflecting surface in this state is perpendicular to the wafer surface, it can be used as an X-ray reflecting mirror for converging X-rays from a point source to another point, but is necessary for cosmic X-ray observation. It cannot be used for the purpose of focusing parallel X-rays on a point.
そこで、上記のようにして得られたウェハを、図２に示すような球面状にするために、塑性変形の技術を利用する（非特許文献８）。すなわち、シリコンウェハを予め用意した球面状の型に入れ、水素雰囲気中で１３００度程度の高温とし、圧力をかける。このようにすることによって、シリコンウェハは型に沿って、曲率半径が１０ｃｍ〜１０ｍ程度の球面状に塑性変形し、その後、形状は安定する。もちろん、用途に応じて球面以外の曲面状とすることもできる。 Therefore, a plastic deformation technique is used to make the wafer obtained as described above into a spherical shape as shown in FIG. 2 (Non-patent Document 8). That is, a silicon wafer is put in a spherical mold prepared in advance and is heated to a high temperature of about 1300 degrees in a hydrogen atmosphere and pressure is applied. By doing so, the silicon wafer is plastically deformed into a spherical shape having a curvature radius of about 10 cm to 10 m along the mold, and then the shape is stabilized. Of course, it may be a curved surface other than a spherical surface depending on the application.
図３は、塑性変形後のＸ線反射鏡の断面図である。同図のように、シリコンウェハを球面状に変形させることによって、上方から入来する平行なＸ線を各Ｘ線反射面で反射させることによって、一点に集光させることができる。 FIG. 3 is a cross-sectional view of the X-ray reflecting mirror after plastic deformation. As shown in the figure, by transforming the silicon wafer into a spherical shape, parallel X-rays coming from above are reflected by the respective X-ray reflecting surfaces, so that they can be condensed at one point.
図４は、塑性変形後のＸ線反射鏡を２段に重ねて構成した集光系の断面図であり、球面の曲率半径が異なる二つのＸ線反射鏡を重ねて構成される、２回反射光学系（Walter type-I）となっている。このような２回反射光学系は、宇宙Ｘ線観測でしばしば用いられる。このような構成により、収差のより小さいＸ線光学系が得られる。また、曲率半径のより小さいものを多段に重ねれば、焦点距離をより短くすることができる。さらに、入射口と出射口を逆に配置すれば、点状のＸ線源から平行Ｘ線を作る逆望遠鏡としての利用も可能となる。 FIG. 4 is a cross-sectional view of a condensing system configured by stacking X-ray reflecting mirrors after plastic deformation in two stages, and is configured by overlapping two X-ray reflecting mirrors having different spherical radii of curvature. It is a reflective optical system (Walter type-I). Such a double reflection optical system is often used in cosmic X-ray observation. With such a configuration, an X-ray optical system with smaller aberration can be obtained. In addition, if the ones having a smaller radius of curvature are stacked in multiple stages, the focal length can be shortened. Furthermore, if the entrance and the exit are arranged in reverse, it can be used as a reverse telescope that produces parallel X-rays from a point-like X-ray source.
図５は、図４に示した集光系を２対対峙させた、点光源からの光を点へ集光する集光系の断面図である。このような光学系は、Ｘ線反射鏡を微量分析などを行うＸ線顕微鏡として利用することができる。このように、本実施形態のＸ線反射鏡は、宇宙用途だけでなく、地上における各種用途にも用いることができる。 FIG. 5 is a cross-sectional view of a condensing system for condensing light from a point light source to a point in which the condensing system shown in FIG. Such an optical system can be used as an X-ray microscope that performs microanalysis of the X-ray reflector. As described above, the X-ray reflecting mirror of the present embodiment can be used not only for space use but also for various uses on the ground.
これまで説明してきたＸ線反射鏡は、シリコンウェハをベースとしたものだが、シリコンウェハの代わりに金属の基板をベースとしたＸ線反射鏡を製作することもできる。金属の基板をベースとする場合は、シリコンウェハの場合のドライエッチングの代わりに、Ｘ線ＬＩＧＡプロセスを用いる。すなわち、まず、高い面精度でスリットが形成されたレジトスを加工し、電析によって、ニッケルなどの金属で、レジストのレプリカを製作する。その後、各スリットの側壁面を、磁気流体を用いて研磨する。これにより、ｎｍレベルあるいはそれ以下の面粗さを実現でき、Ｘ線反射面として十分に機能するレベルの平滑度が得られる。 The X-ray reflecting mirror described so far is based on a silicon wafer, but an X-ray reflecting mirror based on a metal substrate can be manufactured instead of a silicon wafer. When a metal substrate is used as a base, an X-ray LIGA process is used instead of dry etching in the case of a silicon wafer. That is, first, a resist having slits formed thereon with high surface accuracy is processed, and a resist replica is made of a metal such as nickel by electrodeposition. Then, the side wall surface of each slit is grind | polished using a magnetic fluid. As a result, surface roughness of the nm level or less can be realized, and a level of smoothness sufficiently functioning as an X-ray reflecting surface can be obtained.
このままの状態で、点源からのＸ線を別の一点に収束させるＸ線反射鏡としては使用可能であるが、さらに、平行Ｘ線を点に集光するために目的の場合は、球面状に変形させる。この変形は、シリコンウェハの場合よりも容易に、通常の弾性変形又は塑性変形により球面状にすることができる。なお、Ｘ線ＬＩＧＡプロセスを利用する場合は、材質がニッケルなどの金属であるため、シリコンウェハの場合よりも高いエネルギーのＸ線の反射が可能になるという利点がある。 In this state, it can be used as an X-ray reflecting mirror for converging X-rays from a point source to another point. To deform. This deformation can be made spherical by ordinary elastic deformation or plastic deformation more easily than in the case of a silicon wafer. Note that, when the X-ray LIGA process is used, since the material is a metal such as nickel, there is an advantage that X-rays with higher energy can be reflected than in the case of a silicon wafer.
金属をベースとしたＸ線反射鏡についても、シリコンウェハをベースとした場合と同様に、２回反射光学系（Walter type-I）、多段に重ねたＸ線反射鏡、逆望遠鏡を構成することができる他、微量分析などにも適用できる。 For metal-based X-ray reflectors, as in the case of silicon wafers, configure a double-reflection optical system (Walter type-I), multi-layered X-ray reflectors, and reverse telescopes. It can be applied to trace analysis.
Claims (10)
磁性流体を使って前記複数のスリットの各側壁を研磨してＸ線反射面を形成する工程と、
を含んだＸ線反射装置の製造方法。 A step of dry etching a silicon wafer to form a plurality of curved slits;
Polishing each side wall of the plurality of slits using a magnetic fluid to form an X-ray reflecting surface;
Of manufacturing an X-ray reflection device including
前記シリコンウェハに同心円状に設けられた複数の曲線状のスリットと、
前記各スリットの側壁をＸ線の反射が可能な程度まで平滑化して得られるＸ線反射面と、
を含んだＸ線反射装置。 A silicon wafer;
A plurality of curved slits concentrically provided in the silicon wafer;
An X-ray reflecting surface obtained by smoothing the side wall of each slit to the extent that X-rays can be reflected;
X-ray reflection device including
磁性流体を使って前記複数のスリットの各側壁を研磨してＸ線反射面を形成する工程と、
を含んだＸ線反射装置の製造方法。 Forming a metal substrate having a plurality of curved slits formed by an X-ray LIGA process;
Polishing each side wall of the plurality of slits using a magnetic fluid to form an X-ray reflecting surface;
Of manufacturing an X-ray reflection device including
前記金属基板に同心円状に設けられた複数の曲線状のスリットと、
前記各スリットの側壁をＸ線の反射が可能な程度まで平滑化して得られるＸ線反射面と、
を含んだＸ線反射装置。 A metal substrate;
A plurality of curved slits concentrically provided on the metal substrate;
An X-ray reflecting surface obtained by smoothing the side wall of each slit to the extent that X-rays can be reflected;
X-ray reflection device including
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