JP2009517953A - 低雑音増幅器 - Google Patents
低雑音増幅器 Download PDFInfo
- Publication number
- JP2009517953A JP2009517953A JP2008542908A JP2008542908A JP2009517953A JP 2009517953 A JP2009517953 A JP 2009517953A JP 2008542908 A JP2008542908 A JP 2008542908A JP 2008542908 A JP2008542908 A JP 2008542908A JP 2009517953 A JP2009517953 A JP 2009517953A
- Authority
- JP
- Japan
- Prior art keywords
- amplifier
- noise
- low noise
- transformer
- lna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004804 winding Methods 0.000 claims description 39
- 238000010586 diagram Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/534—Transformer coupled at the input of an amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Prostheses (AREA)
Abstract
Description
P=V・I (1)
電力は一定なので、次式(2)が得られる。
Pin=Pout (2)
式(1)を用いると、式(2)は、次式(3)となる。
Vin・Iin=Vout ・Iout (3)
又、インピーダンスの点からみると、式(3)は、次式(5)となる。
Vout =n・Vin (5)
Zin=RC /n2 (6)
ただしnは変成器の二次巻線の巻数であり、抵抗RC は変成器の二次巻線と並列に接続されている。電圧利得GV は、入力インピーダンスZin=RS であることを参照すると次式(7)で与えられる。
GV =20Log(2Vout/VS ) (7)
ただしVS はLNAへの入力電圧信号であり、Vout はLNAからの出力電圧である。式(7)は次式(8)のように書き換えられる。
GV =20Log{2n[Zin/(Zin+RS )]} (8)
NF=10Log[1+(Nadded /Nin)] (9)
ただし、Nadded はLNA要素により生じる雑音であり、Ninは入力信号により生じる雑音である。式(9)は、ボルツマン定数k、雑音温度T及び信号の帯域幅Bの点から次式(10)のように書き換えることができる。
NF=10Log[1+((4kTB)/Zin)/((4kTB)/RS )] (10)
NF=10Log(1+(n2 ・RS /RC )) (11)
Zin=Vin/Iin (12)
で表わされ、
Iin=Vin・(1+(n/2)GV )/RC (13)
であるものとする。
Zin=RC /(1+(n/2)GV ) (14)
NF=10Log[1+(Nadded /Nin)]
=10Log[1+(4kTB/RC )/(4kTB/RS )] (15)
で、又は更に簡単に、
NF=10Log[1+(RS /RC )] (16)
で表わすことができる。
Claims (9)
- 一次巻線段及び二次巻線段を有する変成器と、第1の増幅器と、抵抗素子とを具える低雑音増幅器において、前記二次巻線段が前記第1の増幅器の入力端子に接続され、前記第1の増幅器の出力端が前記抵抗素子を用いた帰還接続により前記変成器の一次巻線段に接続されている低雑音増幅器。
- 請求項1に記載の低雑音増幅器において、この低雑音増幅器が更に、前記変成器の二次巻線段及び前記第1の増幅器と直列に接続されている第2の増幅器を具えている低雑音増幅器。
- 請求項2に記載の低雑音増幅器において、この低雑音増幅器の出力が第1の増幅器の出力端と第2の増幅器の出力端との間に得られるようになっている低雑音増幅器。
- 請求項2又は3に記載の低雑音増幅器において、前記第2の増幅器が高入力インピーダンスを有している低雑音増幅器。
- 請求項1〜4のいずれか一項に記載の低雑音増幅器において、前記第1の増幅器が高入力インピーダンスを有している低雑音増幅器。
- 請求項1〜5のいずれか一項に記載の低雑音増幅器において、前記変成器の二次巻線段の中間点が接地されている低雑音増幅器。
- システム・イン・パッケージで構成した請求項1〜6のいずれか一項に記載の低雑音増幅器。
- 請求項1に記載の低雑音増幅器において、この低雑音増幅器がシステム・イン・パッケージで構成され、前記変成器がシステム・イン・パッケージ構成の外部に存在している低雑音増幅器。
- 請求項1〜8のいずれか一項に記載の低雑音増幅器を具えるチューナ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05300998.1 | 2005-12-02 | ||
EP05300998 | 2005-12-02 | ||
PCT/IB2006/054484 WO2007063494A1 (en) | 2005-12-02 | 2006-11-28 | Low noise amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009517953A true JP2009517953A (ja) | 2009-04-30 |
JP4951002B2 JP4951002B2 (ja) | 2012-06-13 |
Family
ID=37944970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008542908A Expired - Fee Related JP4951002B2 (ja) | 2005-12-02 | 2006-11-28 | 低雑音増幅器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8149053B2 (ja) |
EP (1) | EP1961124B1 (ja) |
JP (1) | JP4951002B2 (ja) |
CN (2) | CN103956977A (ja) |
AT (1) | ATE508535T1 (ja) |
DE (1) | DE602006021789D1 (ja) |
WO (1) | WO2007063494A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2466746B1 (en) | 2010-12-16 | 2013-09-18 | TELEFONAKTIEBOLAGET LM ERICSSON (publ) | Low noise amplifier |
JP5828768B2 (ja) * | 2012-01-05 | 2015-12-09 | パナソニック株式会社 | 保護回路 |
CN106571824A (zh) * | 2015-10-08 | 2017-04-19 | 联发科技(新加坡)私人有限公司 | 信号处理电路 |
CN108667431A (zh) * | 2017-03-27 | 2018-10-16 | 中国科学院声学研究所 | 一种前置放大电路和信号放大方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2934709A (en) * | 1954-09-22 | 1960-04-26 | Leeds & Northrup Co | High-fidelity wide-band amplifier |
JPS5593112U (ja) * | 1978-12-22 | 1980-06-27 | ||
JPH05191157A (ja) * | 1992-01-10 | 1993-07-30 | Toshiba Corp | 平衡入力型音声増幅回路 |
JPH1075128A (ja) * | 1996-08-30 | 1998-03-17 | Toshiba Lighting & Technol Corp | 増幅器およびハイブリッド集積回路 |
JP2002100942A (ja) * | 2000-07-24 | 2002-04-05 | Alcatel | 低電圧広帯域回線ドライバ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3210689A (en) * | 1961-09-15 | 1965-10-05 | Honeywell Inc | Signal detecting and amplifying circuit utilizing a saturable core |
US3243511A (en) * | 1962-10-01 | 1966-03-29 | Douglas Aircraft Co Inc | Amplifier circuit |
GB1088251A (en) * | 1965-01-06 | 1967-10-25 | Marconi Co Ltd | Improvements in or relating to transistor amplifiers |
US3530411A (en) * | 1969-02-10 | 1970-09-22 | Bunker Ramo | High frequency electronic circuit structure employing planar transmission lines |
GB1473106A (en) | 1974-08-05 | 1977-05-11 | Emi Ltd | Improvements in or relating to television camera arrangements |
JPS528756A (en) * | 1975-07-10 | 1977-01-22 | Matsushita Electric Ind Co Ltd | Power amplifier circuit |
US4100596A (en) * | 1977-03-18 | 1978-07-11 | Sperry Rand Corporation | Protected aircraft power and phase converter |
GB1588303A (en) * | 1977-03-18 | 1981-04-23 | Sperry Rand Corp | Power conversion apparatus for aircraft |
JPS58200609A (ja) | 1982-05-18 | 1983-11-22 | Takao Yamashita | 差動変圧器を用いた絶縁増幅器 |
JPH07104217B2 (ja) * | 1988-05-27 | 1995-11-13 | 横河電機株式会社 | 振動式トランスデューサとその製造方法 |
DE10325634B4 (de) | 2003-06-06 | 2018-03-29 | Bruker Biospin Mri Gmbh | Rauscharmer Vorverstärker, insbesondere für die Kernspinresonanz(=NMR) |
-
2006
- 2006-11-28 CN CN201410169443.3A patent/CN103956977A/zh active Pending
- 2006-11-28 EP EP06831980A patent/EP1961124B1/en active Active
- 2006-11-28 JP JP2008542908A patent/JP4951002B2/ja not_active Expired - Fee Related
- 2006-11-28 DE DE602006021789T patent/DE602006021789D1/de active Active
- 2006-11-28 CN CNA2006800447521A patent/CN101317334A/zh active Pending
- 2006-11-28 AT AT06831980T patent/ATE508535T1/de not_active IP Right Cessation
- 2006-11-28 WO PCT/IB2006/054484 patent/WO2007063494A1/en active Application Filing
- 2006-11-28 US US12/095,583 patent/US8149053B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2934709A (en) * | 1954-09-22 | 1960-04-26 | Leeds & Northrup Co | High-fidelity wide-band amplifier |
JPS5593112U (ja) * | 1978-12-22 | 1980-06-27 | ||
JPH05191157A (ja) * | 1992-01-10 | 1993-07-30 | Toshiba Corp | 平衡入力型音声増幅回路 |
JPH1075128A (ja) * | 1996-08-30 | 1998-03-17 | Toshiba Lighting & Technol Corp | 増幅器およびハイブリッド集積回路 |
JP2002100942A (ja) * | 2000-07-24 | 2002-04-05 | Alcatel | 低電圧広帯域回線ドライバ |
Also Published As
Publication number | Publication date |
---|---|
US8149053B2 (en) | 2012-04-03 |
EP1961124A1 (en) | 2008-08-27 |
ATE508535T1 (de) | 2011-05-15 |
WO2007063494A1 (en) | 2007-06-07 |
JP4951002B2 (ja) | 2012-06-13 |
CN103956977A (zh) | 2014-07-30 |
CN101317334A (zh) | 2008-12-03 |
DE602006021789D1 (de) | 2011-06-16 |
EP1961124B1 (en) | 2011-05-04 |
US20100219890A1 (en) | 2010-09-02 |
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