JP2009302545A - パターン形成キャップを用いるエアギャップ形成と一体化 - Google Patents
パターン形成キャップを用いるエアギャップ形成と一体化 Download PDFInfo
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Abstract
【解決手段】 実施形態において、基板、例えば、ダマシン層の上にアモルファス炭素マスクを形成する。アモルファス炭素マスクの上にスペーサ層を堆積させ、スペーサ層をエッチングして、スペーサを形成するとともにアモルファス炭素マスクをさらす。アモルファス炭素マスクを選択的にスペーサまで除去して、基板層をさらす。ギャップ充填層がスペーサの周りに堆積されて、基板層を覆うがスペーサをさらす。スペーサを除去して、選択的に基板の上にギャップ充填マスクを形成する。ギャップ充填マスクのパターンは、一実施態様においては、ダマシン層に転写されて、IMDの少なくとも一部を除去するとともにエアギャップを形成する。
【選択図】 図10A
Description
[0001]本発明の実施形態は、一般的には、超小型電子加工技術、より具体的には、膜をパターン形成する方法に関する。
[0002]集積回路における特徴部縮小化は、より有能な電子デバイスを可能にする。より小さな特徴部への縮小化は、所定の形状因子の機能ユニットデバイスの密度を上げるだけでなくデバイス処理速度を増加させる。しかしながら、デバイス縮小化に問題がない訳ではない。例えば、より小さなデバイスの性能を最適化することはますます難しくなっている。これは、デバイスが32nm技術ノード以上に縮小するにつれて性能限界になる相互接続寄生の縮小化について特に言えることである。
Claims (15)
- 膜をパターン形成する方法であって:
基板の上にアモルファス炭素マスクを形成するステップと;
該アモルファス炭素マスクの上にスペーサ層を堆積させるステップと;
該スペーサ層をエッチングして、スペーサを形成するとともに該アモルファス炭素マスクをさらすステップと;
該アモルファス炭素マスクを選択的に該スペーサまで除去して、該基板層をさらすステップと;
該スペーサの周りに該ギャップ充填層を堆積させて、該基板層を覆うが該スペーサをさらすステップと;
該スペーサを選択的に該ギャップ充填層まで除去して、該基板の上にギャップ充填マスクを形成するステップと;
該ギャップ充填マスクのパターンを該基板に転写するステップと;
を含む、前記方法。 - 該基板が:
金属間誘電体(IMD)と金属相互接続部を交互に含むダマシン層と;
該ダマシン層の上で且つ該アモルファス炭素マスクの下のキャップ層と;
を備える、請求項1に記載の方法。 - 該スペーサ層が、窒化シリコンを含み;
該ギャップ充填層が、二酸化シリコンを含み;
該キャップ層が、シリコン炭素窒化物を含み;
該IMDが、アモルファス炭素、炭素ドープ二酸化シリコン、又はポリマー誘電体の少なくとも一つを含む;
請求項2に記載の方法。 - 該ギャップ充填マスクのパターンを該基板に転写するステップが:
該キャップ層を選択的に該ギャップ充填マスクまでエッチングすることにより該キャップ層をパターン形成する工程と;
該ダマシン層から該IMDの少なくとも一部を選択的に該パターン形成キャップ層までエッチングして、該パターン形成キャップ層をアンダカットする工程と;
を更に含む、請求項2に記載の方法。 - ほぼ同じエッチングプロセスを使用して該キャップ層をエッチングして、該スペーサを選択的に該ギャップ充填層まで除去する、請求項4に記載の方法。
- 該IMDをエッチングすると該ギャップ充填マスクも除去されて、該キャップ層をさらす、請求項4に記載の方法。
- 誘電体を等角的に堆積させて、該パターン形成キャップ層の開口を閉鎖するとともに該IMDを除去したエアギャップを封止する工程、
を更に含む、請求項4に記載の方法。 - 該パターン形成キャップ層が、シリコン炭素窒化物を含む層で封止される、請求項7に記載の方法。
- 該エアギャップを封止する前に、該IMDの除去によってさらされる該金属相互接続部の側壁上に不動態層を等角的に(conformally)堆積させる工程であって、該キャップ層が、シリコン炭素窒化物、窒化シリコン、炭化シリコン及び窒化チタンからなる群より選ばれる少なくとも一つの材料を含む、前記工程を更に含む、請求項7に記載の方法。
- 該ダマシン層から該IMDの少なくとも一部をエッチングして、該パターン形成キャップ層をアンダカットするステップが:
該IMDを選択的に該ダマシン層の該金属相互接続部の側壁に隣接した誘電体ライナまでエッチングする工程であって、該誘電体ライナが、シリコン炭素窒化物、窒化シリコン、炭化シリコン及び窒化チタンからなる群より選ばれる少なくとも一つの材料を含む、前記工程を更に含む、請求項4に記載の方法。 - 該IMDをエッチングするステップが、H2、NH3又はフォーミングガスの少なくとも一つを使用するドライエッチングプロセスを含む、請求項1に記載の方法。
- 該IMDをエッチングするステップが、HF又はIPAを含むウェットエッチングプロセスを含む、請求項1に記載の方法。
- ダマシン構造においてエアギャップを形成する方法であって:
二つの金属相互接続ラインの間に金属間誘電体(IMD)を含むダマシン層を形成するステップであって、各々がライン幅より著しく長いラインの長さを持つ、前記ステップと;
該ダマシン層の上にキャップ層を形成するステップと;
該キャップ層の上にラインを画成するアモルファス炭素マスクを形成するステップであって、該アモルファス炭素マスクラインが、二つの金属相互接続ラインの幅より著しく長い長さと該長さに平行でないと長さを持つ、前記ステップと;
該アモルファスマスクラインの対向する側壁上にスペーサを形成するステップと;
該アモルファス炭素マスクラインを選択的に該スペーサまで除去して、一組のスペーサを形成するステップであって、各々が該二つの金属相互接続ラインの幅より著しく長い長さと該長さに平行でない長さを持つ、前記ステップと;
該一組のスペーサの周りにギャップ充填層を堆積させて、該キャップ層を覆うが該スペーサをさらすステップと;
該一組のスペーサを選択的に該ギャップ充填層まで除去して、長さがチャネル幅より著しく長いチャネルを持つギャップ充填マスクを形成するステップであって、該チャネルの長さが該基板の上に該二つの金属相互接続ラインに平行でない、前記ステップと;
該チャネルを該キャップ層に転写して、該二つの相互接続ラインの間に該IMDをさらすステップと;
該二つの相互接続ラインの間から該IMDの少なくとも一部を除去し、該キャップ層をアンダカットして、該エアギャップを形成するステップと;
を含む、前記方法。 - 該二つの相互接続ラインが、65nm以下だけ隔置され、該チャネルが、この空間の長さにほぼ直交して該キャップ層に転写され、該チャネルの幅が約10nm〜約20nmである、請求項13に記載の方法。
- 該キャップ層が、約5nm〜約50nmの厚さを持つシリコン炭素窒化物を含み;
該スペーサ層が、10nm〜50nmの厚さを持ち、窒化シリコン、アモルファスシリコン又は多結晶シリコンの少なくとも一つを含み;
該ギャップ充填層が、二酸化シリコン、又は炭素ドープ酸化シリコンの少なくとも一つを含む、請求項13に記載の方法。
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US6196408P | 2008-06-16 | 2008-06-16 | |
US61/061,964 | 2008-06-16 | ||
US12/336,884 US7811924B2 (en) | 2008-06-16 | 2008-12-17 | Air gap formation and integration using a patterning cap |
US12/336,884 | 2008-12-17 |
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JP2009302545A true JP2009302545A (ja) | 2009-12-24 |
JP2009302545A5 JP2009302545A5 (ja) | 2014-06-19 |
JP5730471B2 JP5730471B2 (ja) | 2015-06-10 |
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Cited By (2)
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JP2011134994A (ja) * | 2009-12-25 | 2011-07-07 | Elpida Memory Inc | マスクの製造方法、及び半導体装置の製造方法 |
WO2019138924A1 (ja) * | 2018-01-11 | 2019-07-18 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
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---|---|---|---|---|
KR100782487B1 (ko) * | 2006-08-21 | 2007-12-05 | 삼성전자주식회사 | 보이드 한정 구조체들, 상기 보이드 한정 구조체들을가지는 반도체 장치들 및 그들의 형성방법들 |
US7973409B2 (en) | 2007-01-22 | 2011-07-05 | International Business Machines Corporation | Hybrid interconnect structure for performance improvement and reliability enhancement |
TW201011861A (en) * | 2008-09-04 | 2010-03-16 | Nanya Technology Corp | Method for fabricating integrated circuit |
US20100051578A1 (en) * | 2008-09-04 | 2010-03-04 | Shuo-Che Chang | Method for fabricating an integrated circuit |
KR101085721B1 (ko) * | 2009-02-10 | 2011-11-21 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조방법 |
US8399350B2 (en) * | 2010-02-05 | 2013-03-19 | International Business Machines Corporation | Formation of air gap with protection of metal lines |
US8241992B2 (en) | 2010-05-10 | 2012-08-14 | International Business Machines Corporation | Method for air gap interconnect integration using photo-patternable low k material |
DE102010029760B4 (de) * | 2010-06-07 | 2019-02-21 | Robert Bosch Gmbh | Bauelement mit einer Durchkontaktierung und Verfahren zu seiner Herstellung |
US8030202B1 (en) | 2010-12-10 | 2011-10-04 | International Business Machines Corporation | Temporary etchable liner for forming air gap |
US8815102B2 (en) * | 2012-03-23 | 2014-08-26 | United Microelectronics Corporation | Method for fabricating patterned dichroic film |
US8603889B2 (en) | 2012-03-30 | 2013-12-10 | International Business Machines Corporation | Integrated circuit structure having air-gap trench isolation and related design structure |
US9711392B2 (en) | 2012-07-25 | 2017-07-18 | Infineon Technologies Ag | Field emission devices and methods of making thereof |
US9082770B2 (en) | 2012-10-24 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company Limited | Damascene gap structure |
US9337314B2 (en) * | 2012-12-12 | 2016-05-10 | Varian Semiconductor Equipment Associates, Inc. | Technique for selectively processing three dimensional device |
US9054164B1 (en) | 2013-12-23 | 2015-06-09 | Intel Corporation | Method of forming high density, high shorting margin, and low capacitance interconnects by alternating recessed trenches |
US9305835B2 (en) | 2014-02-26 | 2016-04-05 | International Business Machines Corporation | Formation of air-gap spacer in transistor |
KR102414130B1 (ko) * | 2014-04-01 | 2022-06-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 집적된 금속 스페이서 및 에어 갭 인터커넥트 |
KR102168172B1 (ko) | 2014-05-23 | 2020-10-20 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US9679852B2 (en) * | 2014-07-01 | 2017-06-13 | Micron Technology, Inc. | Semiconductor constructions |
US9484250B2 (en) | 2015-03-10 | 2016-11-01 | International Business Machines Corporation | Air gap contact formation for reducing parasitic capacitance |
CN106033741B (zh) | 2015-03-20 | 2020-09-15 | 联华电子股份有限公司 | 金属内连线结构及其制作方法 |
US9567207B2 (en) * | 2015-05-15 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Recess with tapered sidewalls for hermetic seal in MEMS devices |
CN108369923B (zh) | 2015-09-23 | 2023-03-14 | 英特尔公司 | 防止过孔穿通的无掩模气隙 |
KR102334736B1 (ko) * | 2015-12-03 | 2021-12-03 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9553019B1 (en) * | 2016-04-15 | 2017-01-24 | International Business Machines Corporation | Airgap protection layer for via alignment |
KR102482369B1 (ko) | 2016-07-06 | 2022-12-29 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR102655189B1 (ko) | 2016-09-30 | 2024-04-04 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
CN107680953B (zh) * | 2017-11-09 | 2023-12-08 | 长鑫存储技术有限公司 | 金属内连线的互连结构及其形成方法、半导体器件 |
US10903109B2 (en) | 2017-12-29 | 2021-01-26 | Micron Technology, Inc. | Methods of forming high aspect ratio openings and methods of forming high aspect ratio features |
US11469189B2 (en) * | 2018-06-29 | 2022-10-11 | Intel Corporation | Inductor and transmission line with air gap |
US11315787B2 (en) | 2019-04-17 | 2022-04-26 | Applied Materials, Inc. | Multiple spacer patterning schemes |
CN110391179A (zh) * | 2019-08-07 | 2019-10-29 | 德淮半导体有限公司 | 半导体结构及其形成方法 |
US11145540B2 (en) * | 2019-08-08 | 2021-10-12 | Nanya Technology Corporation | Semiconductor structure having air gap dielectric and the method of preparing the same |
US10957760B2 (en) | 2019-08-14 | 2021-03-23 | Nanya Technology Corporation | Semiconductor structure having air gap dielectric and method of preparing the same |
CN113013141A (zh) * | 2019-12-18 | 2021-06-22 | 台湾积体电路制造股份有限公司 | 半导体结构 |
US11882770B2 (en) * | 2020-12-10 | 2024-01-23 | International Business Machines Corporation | Area-selective deposition of metal nitride to fabricate devices |
US11521926B2 (en) | 2021-03-10 | 2022-12-06 | Nanya Technology Corporation | Semiconductor device structure with serpentine conductive feature and method for forming the same |
CN113611655A (zh) * | 2021-06-11 | 2021-11-05 | 联芯集成电路制造(厦门)有限公司 | 半导体结构及其制作方法 |
US20230068892A1 (en) * | 2021-08-26 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Barrier & air-gap scheme for high performance interconnects |
US11923306B2 (en) * | 2021-08-30 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having air gaps and method for manufacturing the same |
US11923243B2 (en) * | 2021-08-30 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having air gaps and method for manufacturing the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294316A (ja) * | 1997-04-18 | 1998-11-04 | Nec Corp | 半導体装置及びその製造方法 |
JP2006019401A (ja) * | 2004-06-30 | 2006-01-19 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2007081403A (ja) * | 2005-09-14 | 2007-03-29 | Hynix Semiconductor Inc | 半導体素子の微細パターン形成方法 |
WO2008008338A2 (en) * | 2006-07-10 | 2008-01-17 | Micron Technology Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
JP2008108788A (ja) * | 2006-10-23 | 2008-05-08 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5328810A (en) * | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
JP2971454B2 (ja) * | 1997-08-21 | 1999-11-08 | 松下電子工業株式会社 | 半導体装置とその製造方法 |
US7579278B2 (en) * | 2006-03-23 | 2009-08-25 | Micron Technology, Inc. | Topography directed patterning |
KR20070106277A (ko) * | 2006-04-28 | 2007-11-01 | 삼성전자주식회사 | 피치 감소 방법 |
US20090001045A1 (en) * | 2007-06-27 | 2009-01-01 | International Business Machines Corporation | Methods of patterning self-assembly nano-structure and forming porous dielectric |
US7943480B2 (en) * | 2008-02-12 | 2011-05-17 | International Business Machines Corporation | Sub-lithographic dimensioned air gap formation and related structure |
-
2008
- 2008-12-17 US US12/336,884 patent/US7811924B2/en not_active Expired - Fee Related
-
2009
- 2009-06-15 TW TW098119957A patent/TWI485806B/zh not_active IP Right Cessation
- 2009-06-16 JP JP2009143128A patent/JP5730471B2/ja not_active Expired - Fee Related
- 2009-06-16 KR KR1020090053576A patent/KR101631294B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294316A (ja) * | 1997-04-18 | 1998-11-04 | Nec Corp | 半導体装置及びその製造方法 |
JP2006019401A (ja) * | 2004-06-30 | 2006-01-19 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2007081403A (ja) * | 2005-09-14 | 2007-03-29 | Hynix Semiconductor Inc | 半導体素子の微細パターン形成方法 |
WO2008008338A2 (en) * | 2006-07-10 | 2008-01-17 | Micron Technology Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
JP2009543378A (ja) * | 2006-07-10 | 2009-12-03 | マイクロン テクノロジー, インク. | 半導体デバイス製造中の交互に行うスペーサ堆積を用いたピッチ縮小技術およびそれを含むシステム |
JP2008108788A (ja) * | 2006-10-23 | 2008-05-08 | Toshiba Corp | 半導体装置の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011134994A (ja) * | 2009-12-25 | 2011-07-07 | Elpida Memory Inc | マスクの製造方法、及び半導体装置の製造方法 |
WO2019138924A1 (ja) * | 2018-01-11 | 2019-07-18 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
JPWO2019138924A1 (ja) * | 2018-01-11 | 2021-01-07 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
US11264272B2 (en) | 2018-01-11 | 2022-03-01 | Sony Semiconductor Solutions Corporation | Semiconductor device and method for manufacturing the same, and electronic apparatus |
JP7158415B2 (ja) | 2018-01-11 | 2022-10-21 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
JP7419476B2 (ja) | 2018-01-11 | 2024-01-22 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
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Publication number | Publication date |
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TWI485806B (zh) | 2015-05-21 |
US7811924B2 (en) | 2010-10-12 |
KR101631294B1 (ko) | 2016-06-17 |
TW201011863A (en) | 2010-03-16 |
KR20090130836A (ko) | 2009-12-24 |
US20090309230A1 (en) | 2009-12-17 |
JP5730471B2 (ja) | 2015-06-10 |
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