JP2009290045A - Conductive die bonding agent for led - Google Patents

Conductive die bonding agent for led Download PDF

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JP2009290045A
JP2009290045A JP2008141959A JP2008141959A JP2009290045A JP 2009290045 A JP2009290045 A JP 2009290045A JP 2008141959 A JP2008141959 A JP 2008141959A JP 2008141959 A JP2008141959 A JP 2008141959A JP 2009290045 A JP2009290045 A JP 2009290045A
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bonding agent
led
die bonding
component
conductive die
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JP5193685B2 (en
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Shinji Mizumura
宜司 水村
Takashi Yamaguchi
喬 山口
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Namics Corp
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Namics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conductive die bonding agent for an LED having an excellent storage stability and excellent light resistance, heat resistance, a thermal shock property and reflectivity after curing; and an LED having excellent optical stability, heat resistance and a thermal shock property. <P>SOLUTION: This conductive die bonding agent for an LED contains: (A) an epoxy resin represented by general formula (1), wherein each R<SP>1</SP>is independently 1-5C alkyl group having an epoxycyclohexyl group at an end, each R<SP>2</SP>is independently 1-3C alkyl group, and n is an integer of 3-5; (B) aluminum triacrylate or aluminum trimethacrylate; (C) an alicyclic epoxy resin represented by general formula (2), wherein X is direct bonding, -CH<SB>2</SB>O-CO- or the like; and (D) a conductive filler. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、発光ダイオード（ＬＥＤ）チップを基板等に接着するＬＥＤ用導電性ダイボンディング剤に関し、これを用いて得られるＬＥＤに関する。   The present invention relates to an LED conductive die bonding agent for bonding a light emitting diode (LED) chip to a substrate or the like, and relates to an LED obtained using the same.

ＬＥＤは、長寿命、低消費電力、低発熱、高速応答性、耐衝撃性、対環境性、小型である等の特徴を有しており、液晶ディスプレイのバックライト、信号機、照明灯、表示装置等の多分野で応用されている。ＬＥＤの製造方法においては、一般に、ダイボンディング剤を使用してＬＥＤチップをインターポーザー、リードフレーム、基板等に固定する手法が採られている。   LED has features such as long life, low power consumption, low heat generation, high-speed response, impact resistance, environmental resistance, small size, etc., LCD backlight, traffic light, illumination lamp, display device It is applied in many fields such as. In the manufacturing method of LED, generally, a technique of fixing an LED chip to an interposer, a lead frame, a substrate or the like using a die bonding agent is employed.

ＬＥＤチップが発した光を外部に多く取り出すためには、導電性ダイボンディング剤で光をより多く反射するか、又は透光性のダイボンディング剤を透過させ、接合している基板部で光をより多く反射させることが必要であり、ダイボンディング剤には、高い反射率、又は高い透過率のいずれかが求められる。ダイボンディング剤には、さらに、高い弾性率、高い接着力、耐光性（特に耐紫外線性）、耐熱性、耐熱衝撃性等が求められる。   In order to extract a large amount of light emitted from the LED chip to the outside, more light is reflected by the conductive die bonding agent or transmitted through the light-transmitting die bonding agent, and light is emitted from the bonded substrate portion. It is necessary to reflect more, and the die bonding agent is required to have either high reflectance or high transmittance. The die bonding agent is further required to have a high elastic modulus, high adhesive strength, light resistance (particularly ultraviolet resistance), heat resistance, and thermal shock resistance.

このダイボンディング剤には、高い弾性率と高い接着力とを発現できる点から、一般に、エポキシ樹脂が使用されている。しかしながら、汎用のビスフェノールＡ型エポキシ樹脂やフェノールノボラック型エポキシ樹脂等を使用した場合、ＬＥＤが発光する４００〜５００ｎｍの光をエポキシ樹脂が吸収し、変色してしまうため、光安定性が損なわれ、ＬＥＤの長時間点灯における輝度劣化をもたらすといった問題があった。   In general, an epoxy resin is used for the die bonding agent because it can exhibit a high elastic modulus and a high adhesive force. However, when a general-purpose bisphenol A type epoxy resin or a phenol novolac type epoxy resin is used, the 400-500 nm light emitted from the LED is absorbed by the epoxy resin and discolored. There has been a problem in that the luminance deteriorates when the LED is turned on for a long time.

光半導体の波長光の反射率を向上させるために、紫外線を吸収せずに耐紫外線性、耐候性を一層向上した脂環式エポキシ樹脂、ヒドラジド系硬化剤、および光反射性の無機フィラーを必須成分とするエポキシ樹脂組成物が開発された（特許文献１参照）。これにより、従来のものよりも短波長吸収性を抑制でき、光の反射性、耐紫外線性、耐候性に優れた接着剤を得ることができた。   In order to improve the reflectivity of optical semiconductor wavelength light, alicyclic epoxy resin, hydrazide curing agent, and light-reflective inorganic filler that have further improved UV resistance and weather resistance without absorbing UV light are essential An epoxy resin composition as a component has been developed (see Patent Document 1). Thereby, the short wavelength absorptivity can be suppressed as compared with the conventional one, and an adhesive having excellent light reflectivity, ultraviolet resistance and weather resistance can be obtained.

しかしながら、１００℃を上回るような高温に長時間放置すると樹脂成分が変色して、光反射性が低下することという問題があった。   However, when left at a high temperature exceeding 100 ° C. for a long time, there is a problem that the resin component discolors and the light reflectivity is lowered.

これらを満足するべく脂環式エポキシ化合物に、珪素原子に直接結合した加水分解性基を含有するシラン化合物と、２価の有機錫化合物、４価の有機錫化合物および光反射性の無機フィラーを必須成分とするエポキシ樹脂組成物が開発されたが、耐光性、耐熱性が充分とはいえない（特許文献２参照）。   In order to satisfy these requirements, a silane compound containing a hydrolyzable group directly bonded to a silicon atom, a divalent organic tin compound, a tetravalent organic tin compound, and a light-reflecting inorganic filler are added to an alicyclic epoxy compound. Although an epoxy resin composition as an essential component has been developed, it cannot be said that light resistance and heat resistance are sufficient (see Patent Document 2).

また、特に耐紫外線性、耐光性、耐熱性に優れる脂環式エポキシで変性したポリシロキサン誘導体を、アルミニウムキレートのみや酸無水物を併用する、硬化した透光性樹脂組成物が開発されているが、保存安定性に欠けている（特許文献３参照）。   In addition, a cured translucent resin composition has been developed in which a polysiloxane derivative modified with an alicyclic epoxy that is particularly excellent in ultraviolet resistance, light resistance, and heat resistance is used in combination with only an aluminum chelate or an acid anhydride. However, storage stability is lacking (refer patent document 3).

特開２００４−２５６６０３号公報JP 2004-256603 A 特開２００７−１３１６７７号公報JP 2007-131777 A 特開２００６−２９０９９８号公報JP 2006-290998 A

本発明の目的は、保存安定性が良好であり、硬化後に耐光性、耐熱性、熱衝撃性、反射率に優れたＬＥＤ用導電性ダイボンディング剤を提供することであり、光安定性、耐熱性と熱衝撃性に優れたＬＥＤを提供することである。   An object of the present invention is to provide a conductive die bonding agent for LED which has good storage stability and is excellent in light resistance, heat resistance, thermal shock and reflectance after curing. It is providing the LED excellent in the property and thermal shock property.

本発明者は、上記の目的を達成するために鋭意研究を重ねた結果、特定の組成を有するＬＥＤ用導電性ダイボンディング剤によれば、目的が達成されることを見出し、本発明を完成させるに至った。   As a result of intensive studies to achieve the above object, the present inventor has found that the object is achieved by the conductive die bonding agent for LED having a specific composition, and completes the present invention. It came to.

すなわち、本発明は、（Ａ）一般式（１）：

Figure 2009290045

（式中、各Ｒ1は、独立して、末端にエポキシシクロヘキシル基を有する炭素数１〜５のアルキル基であり、各Ｒ2は、独立して、炭素数１〜３のアルキル基であり、ｎは３〜５の整数である。）で示されるエポキシ樹脂、
（Ｂ）トリアクリル酸アルミニウム又はトリメタクリル酸アルミニウム、
（Ｃ）一般式（２）：
Figure 2009290045
（式中、Ｘは、直接結合、−Ｏ−、−Ｓ−、−ＳＯ−、ＳＯ2−、―ＣＨ2−、−ＣＨ（ＣＨ3）−、−（ＣＨ2）2−、−Ｃ（ＣＨ3）2−、−ＣＨ2Ｏ−ＣＯ−又は−（ＣＨ2）2Ｏ−ＣＯ−である。）で示される脂環式エポキシ樹脂、及び
（Ｄ）導電性フィラー
を含有する、ＬＥＤ用導電性ダイボンディング剤に関する。 That is, the present invention provides (A) general formula (1):
Figure 2009290045
(In the formula, each R 1 is independently an alkyl group having 1 to 5 carbon atoms having an epoxycyclohexyl group at the terminal, and each R 2 is independently an alkyl group having 1 to 3 carbon atoms. , N is an integer of 3 to 5.)
(B) Aluminum triacrylate or aluminum trimethacrylate,
(C) General formula (2):
Figure 2009290045
(In the formula, X represents a direct bond, —O—, —S—, —SO—, SO 2 —, —CH 2 —, —CH (CH 3 ) —, — (CH 2 ) 2 —, —C ( CH 3 ) 2 —, —CH 2 O—CO— or — (CH 2 ) 2 O—CO—)), and (D) an LED containing a conductive filler The present invention relates to a conductive die bonding agent.

本発明のＬＥＤ用導電性ダイボンディング剤は、保存安定性が良好であり、硬化後に耐光性、耐熱性、熱衝撃性、反射率に優れる。この導電性ダイボンディング剤を用いて、ＬＥＤチップをインターポーザー、リードフレーム、基板等に固定することにより、光安定性、耐熱性と熱衝撃性に優れたＬＥＤを提供することができる。   The conductive die bonding agent for LED of the present invention has good storage stability and is excellent in light resistance, heat resistance, thermal shock resistance and reflectance after curing. By using this conductive die bonding agent to fix the LED chip to an interposer, a lead frame, a substrate or the like, an LED having excellent light stability, heat resistance and thermal shock resistance can be provided.

本発明のＬＥＤ用導電性ダイボンディング剤は、
（Ａ）一般式（１）：

Figure 2009290045

（式中、各Ｒ1は、独立して、末端にエポキシシクロヘキシル基を有する炭素数１〜５のアルキル基であり、各Ｒ2は、独立して、炭素数１〜３のアルキル基であり、ｎは３〜５の整数である。）で示されるエポキシ樹脂、
（Ｂ）トリアクリル酸アルミニウム又はトリメタクリル酸アルミニウム、
（Ｃ）一般式（２）：
Figure 2009290045

（式中、Ｘは、直接結合、−Ｏ−、−Ｓ−、−ＳＯ−、ＳＯ2−、―ＣＨ2−、−ＣＨ（ＣＨ3）、−（ＣＨ2）2−、−Ｃ（ＣＨ3）2−、−ＣＨ2Ｏ−ＣＯ−又は−（ＣＨ2）2Ｏ−ＣＯ−である。）で示される脂環式エポキシ樹脂、及び
（Ｄ）導電性フィラー
を含有する。 The conductive die bonding agent for LED of the present invention is
(A) General formula (1):
Figure 2009290045
(In the formula, each R 1 is independently an alkyl group having 1 to 5 carbon atoms having an epoxycyclohexyl group at the terminal, and each R 2 is independently an alkyl group having 1 to 3 carbon atoms. , N is an integer of 3 to 5.)
(B) Aluminum triacrylate or aluminum trimethacrylate,
(C) General formula (2):
Figure 2009290045

(In the formula, X represents a direct bond, —O—, —S—, —SO—, SO 2 —, —CH 2 —, —CH (CH 3 ), — (CH 2 ) 2 —, —C (CH 3 ) 2— , —CH 2 O—CO— or — (CH 2 ) 2 O—CO—), and (D) a conductive filler.

（Ａ）成分により、硬化後のダイボンディング剤の高い耐光性が図られる。（Ａ）成分のＲ1は、末端にエポキシシクロヘキシル基を有する、炭素数１〜５のアルキル基であり、アルキル基は、直鎖又は分岐であることができる。特に、３，４−エポキシシクロヘキシル基を有する、直鎖または分岐の炭素数２〜３のアルキル基が好ましい。 (A) The high light resistance of the die-bonding agent after hardening is achieved by a component. (A) R 1 of the component having an epoxy cyclohexyl group-terminated alkyl group having 1 to 5 carbon atoms, alkyl groups may be linear or branched. In particular, a linear or branched alkyl group having 2 to 3 carbon atoms and having a 3,4-epoxycyclohexyl group is preferable.

また、Ｒ2は、メチル基であることが好ましく、ｎは４であることが好ましい。 R 2 is preferably a methyl group, and n is preferably 4.

（Ａ）成分としては、式（２）：

Figure 2009290045


で示されるものが特に好ましい。なお、（Ａ）成分は、単独でも、２種以上を併用してもよい。 As the component (A), the formula (2):
Figure 2009290045

Is particularly preferred. In addition, (A) component may be individual or may use 2 or more types together.

（Ｂ）成分により、ダイボンディング剤の保存安定性と、硬化後のダイボンディング剤の耐熱性が図られる。（Ｂ）成分としては、トリアクリル酸アルミニウムが好ましい。なお、（Ｂ）成分は、単独でも、２種以上を併用してもよい。   By component (B), the storage stability of the die bonding agent and the heat resistance of the cured die bonding agent are achieved. As the component (B), aluminum triacrylate is preferable. In addition, (B) component may be individual or may use 2 or more types together.

（Ｃ）成分により、硬化後のダイボンディング剤の耐熱衝撃性が図られる。（Ｃ）成分としては、Ｘが−ＣＨ2Ｏ−ＣＯ−である脂環式エポキシ樹脂が好ましい。なお、（Ｃ）成分は、単独でも、２種以上を併用してもよい。 The thermal shock resistance of the die bonding agent after curing is achieved by the component (C). The component (C), alicyclic epoxy resin X is -CH 2 O-CO- is preferred. In addition, (C) component may be individual or may use 2 or more types together.

（Ｄ）成分により、硬化後のダイボンディング剤の耐光性、耐熱性、耐熱衝撃性、高い反射率が図られる。（Ｄ）成分は、特に限定されず、銀、金、銅、ニッケル、パラジウム、スズ及びこれらの合金等の金属微粉末や金、銀、パラジウムでコーティングされた無機又は有機フィラーが挙げられ、好ましくは銀粉末である。これらの形状は、特に限定されず、球状、リン片状等が挙げられ、好ましくはリン片状であり、平均粒子径としては５〜１５μｍが挙げられる。なお、（Ｄ）成分は、単独でも、２種以上を併用してもよい。   The component (D) can achieve light resistance, heat resistance, thermal shock resistance, and high reflectance of the cured die bonding agent. The component (D) is not particularly limited, and examples thereof include fine metal powders such as silver, gold, copper, nickel, palladium, tin, and alloys thereof, and inorganic or organic fillers coated with gold, silver, and palladium. Is silver powder. These shapes are not particularly limited, and examples thereof include a spherical shape and a flake shape, preferably a flake shape, and an average particle diameter of 5 to 15 μm. In addition, (D) component may be individual or may use 2 or more types together.

本発明においては、（Ａ）成分と（Ｃ）成分の重量比は、好ましくは９２：８〜５０：５０であり、より好ましくは、９０：１０〜６０：４０である。   In the present invention, the weight ratio of the component (A) to the component (C) is preferably 92: 8 to 50:50, and more preferably 90:10 to 60:40.

（Ａ）及び（Ｃ）成分の合計１００重量部に対して、（Ｂ）成分は、好ましくは０．５〜３．０重量部であり、より好ましくは、０．５〜２．０重量部である。（Ｄ）成分は、好ましくは４００〜２０００重量部であり、より好ましくは、５５０〜１６００重量部である。   The component (B) is preferably 0.5 to 3.0 parts by weight, more preferably 0.5 to 2.0 parts by weight with respect to 100 parts by weight of the total of the components (A) and (C). It is. (D) component becomes like this. Preferably it is 400-2000 weight part, More preferably, it is 550-1600 weight part.

本発明のダイボンディング剤は、接着性の観点から、カップリング剤を含有することが好ましい。カップリング剤としては、（Ｅ）シランカップリング剤が挙げられる。（Ｅ）シランカップリング剤は、特に限定されず、ビニルトリクロロシラン、ビニルトリメトキシシラン、ビニルトリエトキシシラン等のビニル基含有シラン、２−（３，４−エポキシシクロヘキシル）エチルトリメトキシシラン、３−グリシドキシプロピルトリメトキシシラン、３−グリシドキシプロピルメチルジエトキシシラン、３−グリシドキシプロピルトリエトキシシラン等のエポキシ基含有シラン、ｐ−スチリルトリメトキシシラン等のスチリル基含有シラン、３−メタクリロキシプロピルメチルジメトキシシラン、３−メタクリロキシプロピルトリメトキシシラン、３−メタクリロキシプロピルメチルジエトキシシラン、３−メタクリロキシプロピルトリエトキシシラン等のメタクリロキシ基含有シラン、３−アクリロキシプロピルトリメトキシシラン等のアクリロキシ基含有シラン、Ｎ−２−（アミノエチル）−３−アミノプロピルメチルジメトキシシラン、Ｎ−２−（アミノエチル）−３−アミノプロピルトリメトキシシラン、Ｎ−２−（アミノエチル）−３−アミノプロピルトリエトキシシラン、３−アミノプロピルトリメトキシシラン、３−アミノプロピルトリエトキシシラン、３−トリエトキシシリル−Ｎ−（１，３−ジメチル−ブチリデン）プロピルアミン、Ｎ−フェニル−３−アミノプロピルトリメトキシシラン等のアミノ基含有シラン等が挙げられる。なかでも、耐光性の点から芳香環を含まないものが好ましく、３―メタクリロキシプロピルトリメトキシシラン、２−（３，４−エポキシシクロヘキシル）エチルトリメトキシシラン、３−グリシドキシプロピルトリメトキシシラン、３−グリシドキシプロピルメチルジエトキシシラン、３−グリシドキシプロピルトリエトキシシラン等を好ましく使用することができる。なお、（Ｅ）成分は、単独でも、２種以上を併用してもよい。   The die bonding agent of the present invention preferably contains a coupling agent from the viewpoint of adhesiveness. Examples of the coupling agent include (E) a silane coupling agent. (E) The silane coupling agent is not particularly limited, and vinyl group-containing silanes such as vinyltrichlorosilane, vinyltrimethoxysilane, and vinyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3 -Epoxy group-containing silanes such as glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, and styryl group-containing silanes such as p-styryltrimethoxysilane, Methacryloxy group-containing silanes such as methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypro Acryloxy group-containing silane such as rutrimethoxysilane, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (amino Ethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl Examples include amino group-containing silanes such as -3-aminopropyltrimethoxysilane. Of these, those containing no aromatic ring are preferred from the viewpoint of light resistance. 3-Methacryloxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane and the like can be preferably used. In addition, (E) component may be individual or may use 2 or more types together.

（Ｅ）成分は、成分（Ａ）、（Ｂ）、（Ｃ）、（Ｄ）の合計１００重量部に対して、好ましくは０．０３〜２．０重量部であり、より好ましくは、０．０５〜１．０重量部である。   The component (E) is preferably 0.03 to 2.0 parts by weight, more preferably 0 to 100 parts by weight in total of the components (A), (B), (C) and (D). 0.05 to 1.0 part by weight.

本発明のダイボンディング剤の粘性、ディスペンス性、転写性等を調整するために、溶剤を使用することができる。溶剤としては、ブチルカルビトールアセテート、エチレングリコールモノエチルエーテル、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノブチルエーテル、エチレングリコールモノメチルエーテル、ジエチレングリコールモノブチルエーテル等のエーテル類、メチルエチルケトン、メチルイソブチルケトン等のケトン類、トルエン、キシレン等の芳香族溶剤、ジオクチルフタレート、ジブチルフタレート等の高沸点溶媒等が挙げられる。溶剤の使用量は、特に限定されず、従来から使用されている量とすることができるが、好ましくは、ダイボンディング剤全体の０．５〜７．０重量％である。   A solvent can be used to adjust the viscosity, dispensing property, transfer property and the like of the die bonding agent of the present invention. As the solvent, ethers such as butyl carbitol acetate, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether, diethylene glycol monobutyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, Examples include aromatic solvents such as toluene and xylene, and high-boiling solvents such as dioctyl phthalate and dibutyl phthalate. Although the usage-amount of a solvent is not specifically limited, Although it can be set as the quantity conventionally used, Preferably, it is 0.5 to 7.0 weight% of the whole die-bonding agent.

本発明は、本発明の効果を損なわない範囲で、粘度調整剤、消泡剤、難燃剤、酸化防止剤等を任意成分として含有することができる。   This invention can contain a viscosity modifier, an antifoamer, a flame retardant, antioxidant, etc. as an arbitrary component in the range which does not impair the effect of this invention.

本発明のダイボンディング剤は、（Ａ）〜（Ｄ）成分、及び必要に応じて（Ｅ）成分をはじめとする任意成分を混合することにより調製することができる。   The die bonding agent of the present invention can be prepared by mixing the components (A) to (D) and, if necessary, optional components including the component (E).

本発明のダイボンディング剤をインターポーザー、リードフレーム、基板等に塗布し、塗布部分にＬＥＤチップを配置した後、１４０〜２００℃で１〜３時間（例えば１７０〜１９０℃で１〜２時間）、ダイボンディング剤を加熱硬化させることにより、ＬＥＤを作製することができる。ＬＥＤチップは、青色ＬＥＤチップ、白色ＬＥＤチップのいずれも使用することができる。   After applying the die bonding agent of the present invention to an interposer, a lead frame, a substrate, etc., and placing an LED chip on the application part, 140 to 200 ° C. for 1 to 3 hours (for example, 170 to 190 ° C. for 1 to 2 hours) The LED can be produced by heating and curing the die bonding agent. As the LED chip, either a blue LED chip or a white LED chip can be used.

本発明によれば、耐熱性に優れたＬＥＤ用導電性ダイボンディング剤が得られる。耐熱性は、硬化後のダイボンディング剤の反射率を測定することにより評価することができ、反射率の変化が小さく安定しているものが耐熱性に優れているということができる。具体的には、本発明のダイボンディング剤をガラス基板上に厚み１５０μｍで塗布し、１５０℃で２時間加熱硬化させ、室温まで冷却させて得られた塗膜の初期の４５０ｎｍの反射率Ｘａと、前記塗膜を、１５０℃で１０００時間保持した後の４５０ｎｍの反射率Ｘｂが、Ｘｂ／Ｘａ≧０．９０を充足するようにすることができる。なお本明細書において、反射率は、いずれもガラス基板の裏面側から入射角４５度で測定した値とする。   According to the present invention, an LED conductive die bonding agent having excellent heat resistance can be obtained. The heat resistance can be evaluated by measuring the reflectance of the die-bonding agent after curing, and it can be said that a material with a small change in reflectance and stable is excellent in heat resistance. Specifically, the initial 450 nm reflectance Xa of the coating film obtained by coating the die bonding agent of the present invention on a glass substrate with a thickness of 150 μm, heating and curing at 150 ° C. for 2 hours, and cooling to room temperature, The reflectivity Xb of 450 nm after the coating film is held at 150 ° C. for 1000 hours can satisfy Xb / Xa ≧ 0.90. In this specification, the reflectance is a value measured at an incident angle of 45 degrees from the back side of the glass substrate.

本発明によれば、保存安定性に優れ、硬化後に耐光性、耐熱性、熱衝撃性、反射率に優れたＬＥＤ用導電性ダイボンディング剤が得られる。ＬＥＤ用導電性ダイボンディング剤の保存安定性は、例えば、増粘率の経時変化を測定することにより評価することができる。硬化後のダイボンディング剤の耐光性は、例えば、ブルーライト等の短波長光の照射前後の反射率の変化を測定することにより、耐熱性は、例えば、高温保持後の反射率の変化を測定することにより、耐熱衝撃性は、例えば、熱衝撃試験後の抵抗値の変化を測定することにより評価することができる。   According to the present invention, it is possible to obtain a conductive die bonding agent for LED which is excellent in storage stability and excellent in light resistance, heat resistance, thermal shock and reflectance after curing. The storage stability of the conductive die bonding agent for LED can be evaluated, for example, by measuring the change in viscosity increase with time. The light resistance of the die bonding agent after curing is measured, for example, by measuring the change in reflectance before and after irradiation with short-wavelength light such as blue light, and the heat resistance is measured, for example, by the change in reflectance after holding at high temperature. Thus, the thermal shock resistance can be evaluated, for example, by measuring a change in resistance value after the thermal shock test.

本発明について、実施例により説明するが、本発明はこれらに限定されるものではない。なお、以下の実施例において、部、％はことわりのない限り、重量部、重量％を表す。   The present invention will be described with reference to examples, but the present invention is not limited thereto. In the following examples, parts and% represent parts by weight and% by weight unless otherwise specified.

表１に示す配合で各成分を混合して、実施例及び比較例の各ＬＥＤ用導電性ダイボンディング剤を調製した。   Each component was mixed by the mixing | blending shown in Table 1, and each conductive die-bonding agent for LED of an Example and a comparative example was prepared.

Figure 2009290045
Figure 2009290045

実施例及び比較例の各剤について、下記の試験を行った。
（１）増粘率
各剤の初期粘度をトキメック製粘度計（型番：ＴＶＥ−２２）でローターの回転数を毎分２．５回転で測定した。なお、各剤の温度は約２５℃で、３°コーン（Ｒ９．７）を使用した。結果を表２に示す。次に、各剤を２５℃で２４時間保持した後、初期粘度と同様に粘度を測定した。増粘率（％）を、（２５℃で２４時間保持後の粘度−初期粘度）／（初期粘度）×１００により求めた。結果を表２に示す。 The following tests were conducted on each of the examples and comparative examples.
(1) Thickening rate The initial viscosity of each agent was measured with a Tokimec viscometer (model number: TVE-22) at a rotor rotation speed of 2.5 rotations per minute. The temperature of each agent was about 25 ° C., and a 3 ° cone (R9.7) was used. The results are shown in Table 2. Next, after holding each agent at 25 ° C. for 24 hours, the viscosity was measured in the same manner as the initial viscosity. The thickening rate (%) was determined by (viscosity after holding at 25 ° C. for 24 hours−initial viscosity) / (initial viscosity) × 100. The results are shown in Table 2.

（２）反射率
各剤を、ガラス基板上に厚み１５０μｍで塗布し、１５０℃で２時間加熱硬化し、反射率測定用サンプルを用意した。このサンプルについて、日本電色工業（株）社製 色差計ＮＦ９９９機器により、ガラス基板の裏面から入射角４５度で反射率を測定した。結果を表２に示す。 (2) Reflectance Each agent was applied on a glass substrate with a thickness of 150 μm, and heat cured at 150 ° C. for 2 hours to prepare a sample for measuring reflectance. About this sample, the reflectance was measured with the incident angle of 45 degree | times from the back surface of the glass substrate with the Nippon Denshoku Industries Co., Ltd. product color difference meter NF999 apparatus. The results are shown in Table 2.

（３）耐光性
反射率測定後のサンプルを使用した。青色ＨＩＤランプ（４００Ｗ、８０００ｌｍ、約２００００Ｌｘ、図１）を用いて、５０ｍｍの距離から、１０００時間、サンプルに光照射した後、照射後の反射率を初期の反射率と同様にして測定した。耐光性（％）を、（１０００時間照射後の反射率）／（初期の反射率）×１００により求めた。結果を表２に示す。 (3) Light resistance A sample after reflectance measurement was used. Using a blue HID lamp (400 W, 8000 lm, about 20000 Lx, FIG. 1), the sample was irradiated with light from a distance of 50 mm for 1000 hours, and the reflectance after irradiation was measured in the same manner as the initial reflectance. Light resistance (%) was determined by (reflectance after 1000 hours irradiation) / (initial reflectance) × 100. The results are shown in Table 2.

（４）耐熱性
反射率測定後のサンプルを使用した。サンプルを、１５０℃の乾燥機中で、１０００時間保持し、保持後のサンプルの反射率を、初期の反射率と同様にして測定した。耐熱性（％）を、（１５０℃で１０００時間保持後の反射率）／（初期の反射率）×１００により求めた。結果を表２に示す。 (4) Heat resistance A sample after reflectance measurement was used. The sample was held in a dryer at 150 ° C. for 1000 hours, and the reflectance of the sample after the retention was measured in the same manner as the initial reflectance. The heat resistance (%) was determined by (reflectance after holding at 150 ° C. for 1000 hours) / (initial reflectance) × 100. The results are shown in Table 2.

（５）耐熱衝撃性
図２（Ａ）に示すように、ＦＲ４基板２上に、Ｃｕ／Ｎｉ／Ａｕ電極３、レジスト４を形成した。次に、図２（Ｂ）に示すように、Ｃｕ／Ｎｉ／Ａｕ電極３上に、各剤１を幅０．５ｍｍ、長さ０．５ｍｍ、厚さ７０μｍで塗布した。次に、図２（Ｃ）に示すように、塗布した各剤１上に、４２アロイ製Ａｇめっきパッド５を載せ、各剤１の厚さが５０μｍになるように密着させた後、１５０℃、１２０分間加熱し、各剤１を硬化させた。次に、図２（Ｄ）に示すように、Ｃｕ／Ｎｉ／Ａｕ電極３上に、ダム剤６を塗布し、エポキシ樹脂の封止剤７をダム剤６の内側に流し込み、１８０℃で２時間加熱した後、室温まで冷却し、サンプルを作製した。
Ｃｕ／Ｎｉ／Ａｕ電極３の外側３１の両電極にプローブを当て、１０ｍＡの電流を流したときの電圧を読み取り、抵抗値を算出した。４回の平均を初期の抵抗値とした。
３００℃のホットプレートに、サンプルを１５秒載せた後、室温で放置した。これを３回繰り返した後のサンプルの抵抗値を、初期の測定値と同様に測定し、耐熱衝撃性（％）を（熱衝撃試験後の抵抗値−初期の抵抗値）／（初期の抵抗値）×１００により求めた。結果を表２に示す。 (5) Thermal shock resistance As shown in FIG. 2A, a Cu / Ni / Au electrode 3 and a resist 4 were formed on an FR4 substrate 2. Next, as shown in FIG. 2B, each agent 1 was applied on the Cu / Ni / Au electrode 3 with a width of 0.5 mm, a length of 0.5 mm, and a thickness of 70 μm. Next, as shown in FIG. 2 (C), a 42 alloy-made Ag plating pad 5 is placed on each applied agent 1 and brought into close contact with each other so that the thickness of each agent 1 becomes 50 μm. For 120 minutes to cure each agent 1. Next, as shown in FIG. 2 (D), a dam agent 6 is applied onto the Cu / Ni / Au electrode 3, and an epoxy resin sealant 7 is poured inside the dam agent 6 at 180 ° C. After heating for a period of time, the sample was cooled to room temperature to prepare a sample.
A probe was applied to both electrodes 31 on the outer side 31 of the Cu / Ni / Au electrode 3 to read a voltage when a current of 10 mA was passed and calculate a resistance value. The average of four times was taken as the initial resistance value.
The sample was placed on a hot plate at 300 ° C. for 15 seconds and then allowed to stand at room temperature. The resistance value of the sample after repeating this three times was measured in the same manner as the initial measurement value, and the thermal shock resistance (%) was calculated as (resistance value after thermal shock test−initial resistance value) / (initial resistance value). Value) x100. The results are shown in Table 2.

Figure 2009290045
Figure 2009290045

表２に示すように、実施例１〜５は、増粘率が０〜５％とポットライフが優れ、反射率が３９〜４１％と良好であり、耐光性試験後に、９９〜１００％の反射率を維持し、耐熱性試験後に、９４〜９６％の反射率を維持し、耐熱衝撃性試験後の抵抗値の変化が０〜５％であり、すべてにおいて優れていた。成分（Ｃ）を含まない比較例１は、熱衝撃性試験後の抵抗値の変化が７０％と大きく低下し、アルミニウムキレート化合物を使用した比較例２、３は、耐熱性試験後の反射率が、８５〜８７％と大きく低下した。特に、比較例３は、導電性ペーストがゲル化し、粘度測定ができなかった。   As shown in Table 2, in Examples 1 to 5, the thickening rate is 0 to 5%, the pot life is excellent, the reflectance is 39 to 41%, and the light resistance test is 99 to 100%. The reflectance was maintained, the reflectance of 94 to 96% was maintained after the heat resistance test, and the change in resistance value after the thermal shock resistance test was 0 to 5%, which was excellent in all. In Comparative Example 1 containing no component (C), the change in resistance value after the thermal shock test is greatly reduced to 70%, and Comparative Examples 2 and 3 using an aluminum chelate compound are reflectances after the heat resistance test. However, it greatly decreased to 85 to 87%. In particular, in Comparative Example 3, the conductive paste gelled and viscosity measurement could not be performed.

これらの結果から、本発明のＬＥＤ用導電性ダイボンディング剤は、反射率のみならず、耐光性の点からも優れたものであり、光安定性に優れたＬＥＤを提供できることがわかる。特に、高温においても、光安定性が得られ、かつ熱衝撃後の抵抗値変化が抑制されている点で優れている。さらに、ポットライフ性にも優れていることから、作業面でも便利である。   From these results, it can be seen that the conductive die bonding agent for LED of the present invention is excellent not only in reflectance but also in light resistance, and can provide an LED excellent in light stability. In particular, it is excellent in that light stability is obtained even at a high temperature and a change in resistance value after thermal shock is suppressed. Furthermore, since it has excellent pot life, it is convenient in terms of work.

本発明のＬＥＤ用導電性ダイボンディング剤は、光安定性、耐熱性と熱衝撃性に優れたＬＥＤを提供でき、ＬＥＤの発展に寄与するものである。   The conductive die bonding agent for LED of the present invention can provide an LED excellent in light stability, heat resistance and thermal shock resistance, and contributes to the development of LED.

青色ＨＩＤランプの波長と相対強度を示す図である。It is a figure which shows the wavelength and relative intensity of a blue HID lamp. 耐熱衝撃性試験のサンプルの作製方法を示す模式図である。It is a schematic diagram which shows the preparation methods of the sample of a thermal shock resistance test.

符号の説明Explanation of symbols

１ ダイボンディング剤
２ ＦＲ４基板
３ Ｃｕ／Ｎｉ／Ａｕ電極
４ レジスト
５ ４２アロイ製Ａｇめっきパッド
６ ダム剤
７ 封止剤 DESCRIPTION OF SYMBOLS 1 Die bonding agent 2 FR4 board | substrate 3 Cu / Ni / Au electrode 4 Resist 5 42 Ag plating pad made from 42 alloy 6 Dam agent 7 Sealant

Claims (8)

（Ａ）一般式（１）：
Figure 2009290045
（式中、各Ｒ1は、独立して、末端にエポキシシクロヘキシル基を有する炭素数１〜５のアルキル基であり、各Ｒ2は、独立して、炭素数１〜３のアルキル基であり、ｎは３〜５の整数である。）で示されるエポキシ樹脂、
（Ｂ）トリアクリル酸アルミニウム又はトリメタクリル酸アルミニウム、
（Ｃ）一般式（２）：
Figure 2009290045
（式中、Ｘは、直接結合、−Ｏ−、−Ｓ−、−ＳＯ−、ＳＯ2−、―ＣＨ2−、−ＣＨ（ＣＨ3）−、−（ＣＨ2）2−、−Ｃ（ＣＨ3）2−、−ＣＨ2Ｏ−ＣＯ−又は−（ＣＨ2）2Ｏ−ＣＯ−である。）で示される脂環式エポキシ樹脂、及び
（Ｄ）導電性フィラー
を含有する、ＬＥＤ用導電性ダイボンディング剤。 (A) General formula (1):
Figure 2009290045
(In the formula, each R 1 is independently an alkyl group having 1 to 5 carbon atoms having an epoxycyclohexyl group at the terminal, and each R 2 is independently an alkyl group having 1 to 3 carbon atoms. , N is an integer of 3 to 5.)
(B) Aluminum triacrylate or aluminum trimethacrylate,
(C) General formula (2):
Figure 2009290045
(In the formula, X represents a direct bond, —O—, —S—, —SO—, SO 2 —, —CH 2 —, —CH (CH 3 ) —, — (CH 2 ) 2 —, —C ( CH 3 ) 2 —, —CH 2 O—CO— or — (CH 2 ) 2 O—CO—)), and (D) an LED containing a conductive filler Conductive die bonding agent. （Ａ）成分が、式（３）：
Figure 2009290045
で示される、請求項１記載のＬＥＤ用導電性ダイボンディング剤。 The component (A) is represented by the formula (3):
Figure 2009290045
The conductive die bonding agent for LED of Claim 1 shown by these. （Ｃ）成分が、Ｘが−ＣＨ2ＯＣＯ−である脂環式エポキシ樹脂である、請求項１又は２記載のＬＥＤ用導電性ダイボンディング剤。 The conductive die bonding agent for LED according to claim 1, wherein the component (C) is an alicyclic epoxy resin in which X is —CH 2 OCO—. （Ｄ）成分が、銀粉末である、請求項１〜３のいずれか１項記載のＬＥＤ用導電性ダイボンディング剤。   The conductive die bonding agent for LED according to any one of claims 1 to 3, wherein the component (D) is silver powder. （Ａ）成分と（Ｃ）成分の重量比が、９２：８〜５０：５０であり、かつ（Ａ）及び（Ｃ）成分の合計１００重量部に対して、（Ｂ）成分が、０．５〜３．０重量部、（Ｄ）成分が、４００〜２０００重量部である、請求項１〜４のいずれか１項記載のＬＥＤ用導電性ダイボンディング剤。   The weight ratio of the component (A) to the component (C) is 92: 8 to 50:50, and the component (B) is 0.1% relative to 100 parts by weight of the total of the components (A) and (C). The conductive die bonding agent for LED according to any one of claims 1 to 4, wherein 5 to 3.0 parts by weight and the component (D) is 400 to 2000 parts by weight. さらに、（Ｅ）シランカップリング剤を含有する、請求項１〜５のいずれか１項記載のＬＥＤ用導電性ダイボンディング剤。   Furthermore, the conductive die-bonding agent for LED of any one of Claims 1-5 containing (E) silane coupling agent. ガラス基板上に厚み１５０μｍで塗布し、１５０℃で２時間加熱硬化させ、室温まで冷却させて得られた塗膜の初期の４５０ｎｍの反射率Ｘａと、前記塗膜を、１５０℃で１０００時間保持した後の４５０ｎｍの反射率Ｘｂが、Ｘｂ／Ｘａ≧０．９０を充足する、請求項１〜６のいずれか１項記載のＬＥＤ用導電性ダイボンディング剤。   An initial 450 nm reflectance Xa of the coating film obtained by coating on a glass substrate with a thickness of 150 μm, heating and curing at 150 ° C. for 2 hours, and cooling to room temperature, and holding the coating film at 150 ° C. for 1000 hours The conductive die bonding agent for LED according to any one of claims 1 to 6, wherein the reflectivity Xb of 450 nm after satisfying Xb / Xa ≧ 0.90. 請求項１〜７のいずれか１項記載のＬＥＤ用導電性ダイボンディング剤を使用して製造したＬＥＤ。   LED manufactured using the conductive die-bonding agent for LED of any one of Claims 1-7.
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