JP2009123923A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】 第1の配線基板2上に複数のパッケージ3a,3bが順次積層された半導体装置1である。第1の配線基板2は、その表面に第1の接続パッド17を有する。パッケージ3a,3bは、第2の配線基板8a,8bと、第2の配線基板8a,8b上に配置された半導体チップ10a,10bと、第2の配線基板8a,8bの端部に形成された傾斜部30a,30bと、傾斜部30a,30bに沿って傾斜して形成された第2の接続パッド14a,14bとを有する。第1の接続パッド17と第2の接続パッド14a,14bとはワイヤ4a,4bにより電気的に接続されている。
【選択図】 図1
Description
上記第1の配線基板は、その表面に第1の接続パッドを有し、
上記パッケージは、第2の配線基板と、この第2の配線基板上に配置された半導体チップと、第2の配線基板の端部に形成された傾斜部と、この傾斜部に沿って傾斜して形成された第2の接続パッドとを有し、
上記第1の接続パッドと上記第2の接続パッドとをワイヤにより電気的に接続したことを特徴とする。
マトリックス状に配置されかつ表面に接続パッドを有する配線基板を準備し、
上記配線基板のそれぞれに複数のパッケージを積層・搭載し、
上記パッケージの周辺に傾斜部を形成し、
上記傾斜部に沿ってボンディングパッドを傾斜させて形成し、
上記複数のパッケージのボンディングパッドと、上記配線基板の接続パッドとをワイヤボンディングによりワイヤを介して電気的に接続し、
上記配線基板の上面に、上記パッケージとワイヤを覆う封止体を形成し、
上記配線基板の裏面に導電性のボールを搭載して外部端子を形成し、
上記外部端子の形成された配線基板をダイシングラインで切断・分離し個片化することにより複数の半導体装置を得ることを特徴とする。
2 第1の配線基板
3 子パッケージ
4a,4b ワイヤ
5 封止体
6 外部端子
7 ランド部
8 第2の配線基板
9 凹部
10 半導体チップ
11 第3の接続パッド
12 電極パッド
13 アンダーフィル材
14 第2の接続パッド
15a,15b 配線
16 テスト用ランド
17 第1の接続パッド
Claims (11)
- 第1の配線基板上に複数のパッケージが順次積層された半導体装置において、
上記第1の配線基板は、その表面に第1の接続パッドを有し、
上記パッケージは、第2の配線基板と、この第2の配線基板上に配置された半導体チップと、第2の配線基板の端部に形成された傾斜部と、この傾斜部に沿って傾斜して形成された第2の接続パッドとを有し、
上記第1の接続パッドと上記第2の接続パッドとをワイヤにより電気的に接続したことを特徴とする半導体装置。 - 前記第2の配線基板の中央領域には凹部が形成されており、この凹部内に前記半導体チップが搭載されていることを特徴とする請求項1に記載の半導体装置。
- 前記半導体チップの裏面には、電極パッドが配置されており、
前記凹部には、第3の接続パッドが配置されており、
前記電極パッドと前記第3の接続パッドとは電気的に接続されていることを特徴とする請求項2に記載の半導体装置。 - 前記電極パッドと前記第3の接続パッドとは、バンプ電極を介してフリップチップ接続されていることを特徴とする請求項3に記載の半導体装置。
- 前記第3の接続パッドは、前記第2の配線基板の中央に配置されており、
前記電極パッドは、前記第3の接続パッドに対応する前記半導体チップの中央に配置されていることを特徴とする請求項3又は4に記載の半導体装置。 - 前記第2の配線基板と前記半導体チップとの間にはアンダーフィル材が設けられていることを特徴とする請求項1乃至5に記載の半導体装置。
- 前記第2の配線基板の裏面に、テスト用ランドが配置されていることを特徴とする請求項1乃至6に記載の半導体装置。
- マトリックス状に配置されかつ表面に接続パッドを有する配線基板を準備し、
上記配線基板のそれぞれに複数のパッケージを積層・搭載し、
上記パッケージの周辺に傾斜部を形成し、
上記傾斜部に沿ってボンディングパッドを傾斜させて形成し、
上記複数のパッケージのボンディングパッドと、上記配線基板の接続パッドとをワイヤボンディングによりワイヤを介して電気的に接続し、
上記配線基板の上面に、上記パッケージとワイヤを覆う封止体を形成し、
上記配線基板の裏面に導電性のボールを搭載して外部端子を形成し、
上記外部端子の形成された配線基板をダイシングラインで切断・分離し個片化することにより複数の半導体装置を得ることを特徴とする半導体装置の製造方法。 - 前記複数のパッケージが積層された状態でワイヤボンディングを行うことにより、前記パッケージの積層・搭載工程と前記ワイヤボンディング工程とを一括分離して実施することを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記配線基板の切断・分離工程は、
前記配線基板の封止体をダイシングテープに接着し、
前記ダイシングテープによって前記配線基板を支持し、
前記配線基板をダイシングブレードによりダイシングラインに沿って切断することにより実施することを特徴とする請求項8又は9に記載の半導体装置の製造方法。 - 前記配線基板の個片化完了後、前記ダイシングテープからピックアップすることにより前記半導体装置を得ることを特徴とする請求項10に記載の半導体装置の製造方法。
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