JP2009105472A - 真空システム、液浸露光装置及び露光方法、デバイス製造方法 - Google Patents
真空システム、液浸露光装置及び露光方法、デバイス製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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Abstract
【解決手段】真空システムは、液浸露光装置に使用される。真空システムは、負圧を発生する吸引装置に接続された流路と、前記流路に引き込まれた気体と液体とを分離する分離器とを備える。
【選択図】図6
Description
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
図1において、露光装置EXは、マスクMを支持するマスクステージMSTと、基板Pを支持する基板ステージPSTと、マスクステージMSTに支持されているマスクMを露光光ELで照明する照明光学系ILと、露光光ELで照明されたマスクMのパターンの像を基板ステージPSTに支持されている基板Pに投影露光する投影光学系PLと、基板P上に液体50を供給する液体供給装置1と、基板Pの外側に流出した液体50を回収する回収装置20と、露光装置EX全体の動作を統括制御する制御装置CONTとを備えている。
なお、液体吸収部材21(溝部23)に接続している流路22とは別の流路を設けて、液体回収孔46に接続するようにしてもよい。
また液体供給装置1と液体回収装置2の構成やノズルの配置は上記の実施形態に限られない。また基板Pの露光中に、必ずしも液体供給装置1と液体回収装置2とが並行して動作している必要はなく、投影光学系PLと基板Pとの間の露光光光路が液体50で満たされていれば、どちらか一方を停止させていてもよいし、両方を止めておいてもよい。
次に、本発明の露光装置EXの他の実施形態について、図7を参照しながら説明する。
ここで、以下の説明において、上述した実施形態と同一又は同等の構成部分については同一の符号を付し、その説明を簡略もしくは省略する。本実施形態に係る特徴的な部分は、回収装置として液体吸収部材21に代えて基板Pの周囲に液体回収溝35を設けた点と、基板ステージPSTと管路26とが接続・分離自在となっている点である。
以下、図8〜図10を参照しながら、回収装置の他の実施形態について説明する。
また、回収装置の更に別の実施形態について、以下に説明する。図10(a)に示すように、Zステージ51の上面に液体回収溝35が設けられている。液体回収溝35はZステージ51の下面側に貫通する流路39に接続している。流路39にはバルブ39Aが設けられている。また、Zステージ51の流路39に対応して、XYステージ52及びベース53のそれぞれには貫通孔である流路40、41が形成されている。露光処理中において、バルブ39Aは閉じられており、図10(a)に示すように、液体50が液体回収溝35に溜まる。そして、露光処理が終了したら、制御装置CONTは、基板ステージPSTを基板交換位置に移動し、バルブ39Aを開放する。これにより、図10(b)に示すように、液体回収溝35の液体50は基板交換位置において、流路39、40、及び41を介して自重によりステージ外部に排出される。なお、液体回収溝35の液体50の回収は基板交換位置において行うのが好ましいが、基板交換位置とは別の位置で排出作業を行うようにしてもよい。
ところで、上述した各実施形態においては、液体供給装置1が供給ノズル4を介して基板Pの上方から基板P上に液体50を供給するとともに、第2回収装置としての液体回収装置2が回収ノズル5を介して基板Pの上方から基板P上の液体50を回収することで、基板P上の一部に液浸領域を形成しているが、図11に示すように、基板Pの上方に液体回収装置2(回収ノズル5)を設けずに、基板P上に供給されたほぼ全ての液体50を、基板ステージPSTに設けられた回収装置20で回収するようにしてもよい。図11には、投影光学系PLの投影領域(光学素子60)を挟んだ走査方向(X軸方向)両側のそれぞれに設けられた供給ノズル4、8が図示されている。基板Pを走査露光するときに液体50を供給する際には、基板Pの移動方向に応じて供給ノズル4、8のうちのいずれか一方の供給ノズルから液体50を供給するようにしてよいし、あるいは両方の供給ノズル4、8から同時に液体50を供給するようにしてもよい。液体供給装置1より供給された液体50は、基板P上において大きく拡がり、大きな液浸領域を形成することができる。そして、図12の斜視図に示すように、基板P上に供給された液体50はやがて基板Pの外側に流出するが、基板Pの周りに回収口として設けられた溝部23(液体吸収部材21)を有する回収装置20によりほぼ全てを回収される。ここで、基板Pに対する露光処理中、液体供給装置1は基板P上に対して液体50の供給を継続することにより基板P上に良好に液浸領域を形成できるとともに、供給した液体50により基板P上の液体50に流れを生じさせることができるため、新鮮(清浄)な液体50を基板P上に常時供給するとともに基板P上の液体50を溝部23まで流すことができる。
また先に説明した実施形態のように、基板Pの上方から回収ノズル5を介して液体の回収を行う液体回収装置2を配置しておき、基板Pの露光中は液体回収装置2を動作させずに回収装置20のみで液体の回収を行い、基板Pの露光完了後に、液体回収装置2と回収装置20とを併用して液体50の回収を行うようにしてもよい。この場合も、基板Pの露光中の液体の吸引(回収)に伴う音や振動の影響を抑えることができる。
Claims (14)
- 液浸露光装置に使用される真空システムであって、
負圧を発生する吸引装置に接続された流路と、
前記流路に引き込まれた気体と液体とを分離する分離器と、を備える真空システム。 - 前記分離器は、タンクを含む請求項1記載の真空システム。
- 前記吸引装置と前記タンクとの間の流路に配置されたバルブを更に備える請求項2記載の真空システム。
- 前記分離器は、前記タンクに接続され前記タンク内の液体を排出するための排出流路を有する請求項2記載の真空システム。
- 前記タンクに設けられ、前記タンクに流入した液体量を検出する液体量検出装置を備える請求項4記載の真空システム。
- 前記液体量検出装置は、前記タンク内の液体の水位を検出する水位センサを含み、前記水位センサの検出結果に応じて前記タンクから前記液体を排出する請求項5記載の真空システム。
- 前記液浸露光装置と前記タンクとの間の流路に設けられ、前記流路を通過した液体量を検出する液体量検出装置を備える請求項4記載の真空システム。
- 前記液体量検出装置は、前記液浸露光装置の制御に用いられる前記液体量に関する情報を前記液浸露光装置に通知する請求項5又は7記載の真空システム。
- 前記気体と前記液体とは、多孔部材を介して前記流路に引き込まれる請求項1〜8のいずれか一項記載の真空システム。
- 液体を介して基板上にパターンを投影し、前記基板を露光する液浸露光装置であって、
前記液体を回収する回収装置が、請求項1〜9のいずれか一項記載の真空システムを備える液浸露光装置。 - 請求項10に記載の液浸露光装置を用いることを特徴とするデバイス製造方法。
- 投影光学系により所定のパターン像を基板上に転写することで基板を露光する露光方法であって、
前記投影光学系と前記基板との間に液体を供給することと、
前記液体を介して前記基板を露光することと、
前記供給された液体を回収することと、
前記回収された液体と、前記液体の回収中に混入した気体とを分離することと、を含む露光方法。 - 前記気体から分離した前記液体をタンクに溜めることと、
前記タンクに溜まった前記液体の量を検出することと、を更に含む請求項12記載の露光方法。 - 検出された前記液体の量に応じて前記タンクに溜まった前記液体をタンクから排出することを更に含む請求項13記載の露光方法。
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TWI760371B (zh) * | 2016-09-30 | 2022-04-11 | 日商尼康股份有限公司 | 物體保持裝置、曝光裝置、平板顯示器之製造方法、元件製造方法、以及物體保持方法 |
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JP4596077B2 (ja) | 2010-12-08 |
WO2004053953A1 (ja) | 2004-06-24 |
US8089611B2 (en) | 2012-01-03 |
SG158745A1 (en) | 2010-02-26 |
TW200425268A (en) | 2004-11-16 |
US20060238730A1 (en) | 2006-10-26 |
US20090180089A1 (en) | 2009-07-16 |
US7589820B2 (en) | 2009-09-15 |
EP1571695A1 (en) | 2005-09-07 |
SG150388A1 (en) | 2009-03-30 |
KR20120127755A (ko) | 2012-11-23 |
SG157962A1 (en) | 2010-01-29 |
EP1571695A4 (en) | 2008-10-15 |
CN1723541A (zh) | 2006-01-18 |
AU2003289236A1 (en) | 2004-06-30 |
KR20050062665A (ko) | 2005-06-23 |
CN101852993A (zh) | 2010-10-06 |
TWI334160B (ja) | 2010-12-01 |
US20050219488A1 (en) | 2005-10-06 |
CN1723541B (zh) | 2010-06-02 |
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