JP2009094517A - 複数変換材料発光ダイオードパッケージおよびその製造方法 - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title abstract description 20
- 230000005284 excitation Effects 0.000 claims abstract description 50
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 119
- 239000000203 mixture Substances 0.000 claims description 20
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 7
- 230000002596 correlated effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 238000000295 emission spectrum Methods 0.000 description 48
- 238000000695 excitation spectrum Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000002284 excitation--emission spectrum Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- -1 (YAG) are used Chemical compound 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- VAYOSLLFUXYJDT-RDTXWAMCSA-N Lysergic acid diethylamide Chemical compound C1=CC(C=2[C@H](N(C)C[C@@H](C=2)C(=O)N(CC)CC)C2)=C3C2=CNC3=C1 VAYOSLLFUXYJDT-RDTXWAMCSA-N 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 150000002366 halogen compounds Chemical group 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】複数の蛍光体はそれぞれ、LEDからの光の少なくとも幾分かを吸収し、異なる波長の光を再び発する。このパッケージは、LEDおよび複数の蛍光体からの合成光を発し、蛍光体は、エミッタパッケージが目標色の標準偏差内で光を発するような励起特性を有する。エミッタパッケージを製造する方法は、複数のLEDを製造することを含み、複数のLEDはそれぞれ、ある波長範囲内の波長で発光する。これらのLEDは、それぞれのLEDからの光の少なくとも幾分かが、変換材料によって吸収され、再び発せられるように、複数の変換材料と共にパッケージ内に配置される。複数の変換材料は、LEDパッケージが目標色からの標準偏差内で光を発するように、LED波長範囲内の異なるLED発光波長を補償する励起特性を有する。
【選択図】図2b
Description
Sr2−x−yBaxCaySiO4:Euが含まれる。
SrxCa1−xS:Eu、Y;Y=ハロゲン化合物、
CaSiAlN3:Eu、または
Sr2−yCaySiO4:Eu
SrGa2S4:Eu、
Sr2−yBaySiO4:Eu、または
SrSi2O2N2:Eu
(黄色/緑色)
(Sr、Ca、Ba)(Al、Ga)2S4:Eu2+
Ba2(Mg、Zn)Si2O7:Eu2+
Gd0.46Sr0.31Al1.23OxF1.38:Eu2+ 0.06
(Ba1−x−ySrxCay)SiO4:Eu
Ba2SiO4:Eu2+
(赤色)
Lu2O3:Eu3+
(Sr2−xLax)(Ce1−xEux)O4
Sr2Ce1−xEuxO4
Sr2−xEuxCeO4
SrTiO3:Pr3+、Ga3+
CaAlSiN3:Eu2+
Sr2Si5N8:Eu2+
Claims (11)
- ある波長範囲内のある波長で光を発する発光ダイオード(LED)と、
それぞれが前記LEDからの光の少なくとも幾分かを吸収し、異なる波長の光を再び発する複数の蛍光体とを備えるエミッタパッケージであって、前記パッケージは、前記LEDおよび前記複数の蛍光体からの合成光を発し、前記蛍光体は、前記エミッタパッケージが、前記波長範囲内の前記波長で発光するLEDに関して、目標色の標準偏差内で光を発するような発光波長および励起特性を有することを特徴とするエミッタパッケージ。 - 前記LEDおよび前記蛍光体からの光の合成白色光を発することを特徴とする請求項1に記載のエミッタパッケージ。
- 前記標準偏差は、マカダム楕円を含むことを特徴とする請求項1に記載のエミッタパッケージ。
- 前記発光波長範囲は、約430から480nmであり、前記複数の蛍光体は、それぞれ約560および約570nmのピーク発光を有する第1の蛍光体および第2の蛍光体を備えることを特徴とする請求項1に記載のエミッタパッケージ。
- CIE色座標系の黒体軌跡(BBL)上にほぼある白色目標を有することを特徴とする請求項2に記載のエミッタパッケージ。
- 前記発光波長範囲は、約430から480nmであり、前記複数の蛍光体は、それぞれ約550および約580nmのピーク発光を有する第1の蛍光体および第2の蛍光体を備えることを特徴とする請求項1に記載のエミッタパッケージ。
- 前記発光波長範囲は、約430から480nmであり、前記複数の蛍光体は、それぞれ約500から560nmおよび約570から630nmのピーク発光を有する第1の蛍光体および第2の蛍光体を備えることを特徴とする請求項1に記載のエミッタパッケージ。
- CIE色座標系の黒体軌跡(BBL)上にほぼある約5,000Kから約10,000Kの相関色温度(CCT)を備えた冷白色目標を有することを特徴とする請求項7に記載のエミッタパッケージ。
- CIE色座標系の黒体軌跡(BBL)上にほぼある約2,000Kから約5,000Kの相関色温度(CCT)を備えた暖白色目標を有することを特徴とする請求項7に記載のエミッタパッケージ。
- 前記複数の蛍光体は、一般組成が(Ba1−x−ySrxCay)SiO4:Euの、それぞれ約520nmおよび585nmの発光波長を有する2つの蛍光体を備えることを特徴とする請求項1に記載のエミッタパッケージ。
- ある波長範囲内のある波長で発光する発光ダイオード(LED)と、
それぞれが前記LEDから発せられた光を吸収し、異なる波長の光を再び発するように構成された少なくとも2つの変換材料とを備えるエミッタパッケージであって、前記変換材料のそれぞれは、再発光ピーク波長および励起特性をそれぞれ有し、前記蛍光体は、前記パッケージの前記発光が、標準偏差内に収まるように制御されるように、前記LEDの異なる波長発光を補償するように構成されることを特徴とするエミッタパッケージ。
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US11/974,431 US9012937B2 (en) | 2007-10-10 | 2007-10-10 | Multiple conversion material light emitting diode package and method of fabricating same |
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US (1) | US9012937B2 (ja) |
EP (2) | EP2472614B1 (ja) |
JP (1) | JP2009094517A (ja) |
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Also Published As
Publication number | Publication date |
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EP2472614B1 (en) | 2017-04-26 |
EP2048718A1 (en) | 2009-04-15 |
US20090095966A1 (en) | 2009-04-16 |
EP2048718B1 (en) | 2015-09-09 |
EP2472614A3 (en) | 2012-12-05 |
EP2472614A2 (en) | 2012-07-04 |
US9012937B2 (en) | 2015-04-21 |
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