JP2013500596A - 補償形変換素子を有する発光ダイオードおよび相応する変換素子 - Google Patents
補償形変換素子を有する発光ダイオードおよび相応する変換素子 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 167
- 238000010521 absorption reaction Methods 0.000 claims abstract description 78
- 230000003595 spectral effect Effects 0.000 claims abstract description 22
- 230000005855 radiation Effects 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 7
- 239000000470 constituent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
− この変換素子(34)には第1の発光材料(3)および第2の発光材料(4)が含まれており、− 第1の発光材料(3)は、吸収波長領域(Δλab)において、波長が長くなるのに伴って吸収率が小さくなり、第2の発光材料(4)は、同じ吸収波長領域(Δλab)において、波長が長くなるのに伴って吸収率が大きくなり、
− 上記の1次ビームには、上記の吸収波長領域(Δλab)にある波長が含まれており、また − 上記の発光ダイオードは、1次ビームおよび2次ビームからなりかつ少なくとも4000Kの色温度を有する白色混合光を放射する。
Description
スペクトルを求めるためには以下のようにした。すなわち、
青色発光ダイオードチップのこのスペクトルは、(Ga,In)Nベースの発光ダイオードにおいて測定した。この発光材料の放射スペクトルは、粉末試料において測定した。反射率測定から上記の吸収度を求めることができた。上記のデータを評価するため、クベルカ−ムンク法を使用した。上記の吸収度は、クベルカ−ムンクパラメタKに基づくものであり、これは伝搬方向における減衰を表す。
図9には、個別発光材料ないしは混合物(曲線a+b))に対し、白色発光ダイオードのスペクトル経過が示されている。第2の発光材料のスペクトル(曲線b))は、約100nmの半値幅を有する。
Claims (15)
- 発光ダイオードにおいて、
該発光ダイオードは、
− 動作時に青色光のスペクトル領域において1次ビームを放射する発光ダイオードチップ(1)と、
− 当該1次ビームの一部を吸収して2次ビームを再放射する変換素子(34)とを有しており、
ただし、
− 当該変換素子(34)には、第1の発光材料(3)および第2の発光材料(4)が含まれており、
− 前記第1の発光材料(3)は、吸収波長領域(Δλab)において、波長が長くなるのに伴って吸収率が小さくなり、前記第2の発光材料(4)は、同じ吸収波長領域(Δλab)において、波長が長くなるのに伴って吸収率が大きくなり、
− 前記1次ビームには、前記吸収波長領域(Δλab)内にある複数の波長が含まれており、
− 前記発光ダイオードは、1次ビームおよび2次ビームからなりかつ少なくとも4000Kの色温度を有する白色混合光を放射することを特徴とする
発光ダイオード。 - 前記第1の発光材料(3)および第2の発光ダイオード(4)は同じ色の光を放射し、
当該第1の発光材料および第2の発光材料の最大放射強度の波長は、互いわずかにずれている、
請求項1に記載の発光ダイオード。 - 前記第1の発光材料および第2の発光材料の最大放射強度の波長は、最大で20nm、有利に最大10nm、殊に有利に最大7nmだけ異なる、
請求項1または2に記載の発光ダイオード。 - 前記2次ビームは、黄色光のスペクトル領域内にある、
請求項1から3までのいずれか1項に記載の発光ダイオード。 - 前記第2の発光材料(4)の最大放射強度の波長は、前記第1の発光材料(3)の最大放射強度の波長よりも長い、
請求項1から4までのいずれか1項に記載の発光ダイオード。 - 前記第1の発光材料(3)は、発光中心としてユーロピウムをベースとしており、
前記第2の発光材料(4)は、発光中心としてCerをベースにしている、
請求項1から5までのいずれか1項に記載の発光ダイオード。 - 前記第2の発光材料(4)には(Gd, Lu, Y)(Al, Ga)G:Cer3+が含まれている、
請求項1から6までのいずれか1項に記載の発光ダイオード。 - 前記第1の発光材料(3)には(Ca, Sr, Ba)SiO4:Eu2+および/または(Ca, Sr, Ba)Si2O2N2:Eu2+が含まれている、
請求項1から7までのいずれか1項に記載の発光ダイオード。 - 前記第1次ビームの放射強度の最大値(λD)は、少なくとも440nmでありかつ最大で470nmである、
請求項1から8までのいずれか1項に記載の発光ダイオード。 - 前記第1の発光材料(3)および前記第2の発光材料(4)は、発光中心としてCerをベースとしており、
ただし、前記発光材料(3,4)のうちの1つの発光材料の吸収波長(Δλab)は、当該発光材料(3,4)のホスト格子の構成を変化させることによって他方の発光材料(4,3)に対してシフトされる、
請求項1から9までのいずれか1項に記載の発光ダイオード。 - 前記発光材料(3,4)のうちの1つの発光材料は、YAG:Ceであるかまたはこれを含有しており、
他方の発光材料は、Y(GA,Al)G:Ceであるかまたはこれを含有する、
請求項1から10までのいずれか1項に記載の発光ダイオード。 - 前記吸収波長領域(Δλab)における前記変換素子の吸収率は、殊に少なくとも440nmでありかつ最大で470nmである波長領域において最大35%だけ減少する、
請求項1から11までのいずれか1項に記載の発光ダイオード。 - 前記第2の発光材料(4)に対する前記第1の発光材料(3)の重量比は、少なくとも0.60でありかつ最大で1.5である、
請求項1から12までのいずれか1項に記載の発光ダイオード。 - 2つの発光ダイオードチップ(1)を有しており、
動作時に当該2つの発光ダイオードチップ(1)によって形成される電磁ビームの放射強度最大値は、少なくとも5nmだけ異なっている、
請求項1から13までのいずれか1項に記載の発光ダイオード。 - 1次ビームを吸収しかつ2次ビームを放射するために設けられている、発光ダイオード用の変換素子(34)において、
該変換素子は、
− 第1の発光材料(3)および第2の発光材料(4)を有しており、
ただし、
− 前記第1の発光材料(3)は、吸収波長領域(Δλab)において、波長が長くなるのに伴って吸収率が小さくなり、前記第2の発光材料(4)は、同じ吸収波長領域(Δλab)において、波長が長くなると共に吸収率が大きくなり、
− 第1の発光材料および第2の発光材料の最大放射強度の波長は、最大で20nmだけ互いに異なることを特徴とする、
発光ダイオード用の変換素子。
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DE102009035100A DE102009035100A1 (de) | 2009-07-29 | 2009-07-29 | Leuchtdiode und Konversionselement für eine Leuchtdiode |
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PCT/EP2010/059180 WO2011012388A1 (de) | 2009-07-29 | 2010-06-29 | Leuchtdiode mit kompensierendem konversionselement und entsprechendes konversionselement |
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TWI473303B (zh) * | 2011-09-07 | 2015-02-11 | Univ Nat Central | A way to reduce the LED color temperature and color coordinates drift |
DE102011114192A1 (de) * | 2011-09-22 | 2013-03-28 | Osram Opto Semiconductors Gmbh | Verfahren und Vorrichtung zur Farbortsteuerung eines von einem Licht emittierenden Halbleiterbauelement abgestrahlten Lichts |
DE102011085645B4 (de) | 2011-11-03 | 2014-06-26 | Osram Gmbh | Leuchtdiodenmodul und Verfahren zum Betreiben eines Leuchtdiodenmoduls |
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US9923125B2 (en) | 2013-11-25 | 2018-03-20 | Sichuan Sunfor Light Co., Ltd. | Method for improving defect-free rate of LED light source, phosphor powder, and LED light source |
CN107112320A (zh) * | 2014-10-01 | 2017-08-29 | 皇家飞利浦有限公司 | 具有可调谐发射光谱的光源 |
CN111363360A (zh) * | 2020-04-17 | 2020-07-03 | 南京众慧网络科技有限公司 | 一种新型有机硅封装的高亮度led灯 |
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- 2010-06-29 KR KR1020127005082A patent/KR20120039044A/ko not_active Application Discontinuation
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- 2010-06-29 WO PCT/EP2010/059180 patent/WO2011012388A1/de active Application Filing
- 2010-06-29 JP JP2012522060A patent/JP2013500596A/ja active Pending
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WO2011012388A1 (de) | 2011-02-03 |
EP2460192A1 (de) | 2012-06-06 |
DE102009035100A1 (de) | 2011-02-03 |
US20120126275A1 (en) | 2012-05-24 |
CN102549786A (zh) | 2012-07-04 |
CN102549786B (zh) | 2015-07-15 |
KR20120039044A (ko) | 2012-04-24 |
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