JP2009094207A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2009094207A JP2009094207A JP2007262138A JP2007262138A JP2009094207A JP 2009094207 A JP2009094207 A JP 2009094207A JP 2007262138 A JP2007262138 A JP 2007262138A JP 2007262138 A JP2007262138 A JP 2007262138A JP 2009094207 A JP2009094207 A JP 2009094207A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
【解決手段】電極パターンが形成された基板と、基板上に実装され、電極パターンと電気的に接続された発光素子と、発光素子を覆うように形成された樹脂封止体とを備える発光装置であって、樹脂封止体が、発光素子を覆うように形成された第1の樹脂封止体と、その上に積層された第2の樹脂封止体とから構成され、第1の樹脂封止体および第2の樹脂封止体は同一種類の樹脂で形成され、かつ、第2の樹脂封止体が、第1の樹脂封止体よりも高い濃度で蛍光体を含有する、発光装置。
【選択図】図1
Description
Claims (10)
- 配線パターンが形成された基板と、
基板上に実装され、配線パターンと電気的に接続された発光素子と、
発光素子を覆うように形成された樹脂封止体とを備える発光装置であって、
樹脂封止体が、発光素子を覆うように形成された第1の樹脂封止体と、その上に積層された第2の樹脂封止体とから構成され、第1の樹脂封止体および第2の樹脂封止体は同一種類の樹脂で形成され、かつ、第2の樹脂封止体が、第1の樹脂封止体よりも高い濃度で蛍光体を含有する、発光装置。 - 基板が酸化アルミニウム基板であり、発光素子が青色発光ダイオードである、請求項1に記載の発光装置。
- 第1の樹脂封止体が蛍光体を含まず、第2の樹脂封止体のみが蛍光体を含有する、請求項1または2に記載の発光装置。
- 第1の樹脂封止体および第2の樹脂封止体の両方に蛍光体を含む、請求項1または2に記載の発光装置。
- 第1の樹脂封止体および第2の樹脂封止体が共に2種以上の蛍光体を含み、各樹脂封止体にそれぞれ含まれる各種の蛍光体同士の重量比率が等しくなるように構成されている、請求項4に記載の発光装置。
- 樹脂封止体が2種以上の蛍光体を含有し、少なくとも第1の樹脂封止体が、樹脂に対する蛍光体の沈降が他の蛍光体と比較して相対的に小さい蛍光体を含む、請求項4または5に記載の発光装置。
- 第1の樹脂封止体が、光散乱材となる微粒子を含む、請求項1〜6のいずれかに記載の発光装置。
- 第1の樹脂封止体および第2の樹脂封止体の少なくともいずれかに、蛍光体の沈降を防止する微粒子を含む、請求項1〜7のいずれかに記載の発光装置。
- 前記微粒子が、樹脂封止体を形成する樹脂と同一の樹脂からなる微粒子である、請求項8に記載の発光装置。
- 樹脂封止体を形成する樹脂がシリコーン系樹脂またはエポキシ系樹脂である、請求項1〜9のいずれかに記載の発光装置。
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JP2007262138A JP5286585B2 (ja) | 2007-10-05 | 2007-10-05 | 発光装置 |
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JP2007262138A JP5286585B2 (ja) | 2007-10-05 | 2007-10-05 | 発光装置 |
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JP2009094207A true JP2009094207A (ja) | 2009-04-30 |
JP5286585B2 JP5286585B2 (ja) | 2013-09-11 |
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Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123802A (ja) * | 2008-11-20 | 2010-06-03 | Nitto Denko Corp | 光半導体封止用シート |
CN102163683A (zh) * | 2010-02-02 | 2011-08-24 | 日东电工株式会社 | 光学半导体装置 |
WO2011129202A1 (ja) * | 2010-04-16 | 2011-10-20 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
JP2011238902A (ja) * | 2010-04-16 | 2011-11-24 | Nichia Chem Ind Ltd | 発光装置 |
JP2011258611A (ja) * | 2010-06-04 | 2011-12-22 | Sharp Corp | 発光装置 |
CN102313205A (zh) * | 2010-06-28 | 2012-01-11 | 东芝照明技术株式会社 | 发光模块以及包括该发光模块的照明器具 |
JP2012109478A (ja) * | 2010-11-19 | 2012-06-07 | Toshiba Lighting & Technology Corp | 発光体および照明装置 |
CN102544244A (zh) * | 2010-12-10 | 2012-07-04 | 比亚迪股份有限公司 | 一种led组件的制备方法 |
JP2012186319A (ja) * | 2011-03-07 | 2012-09-27 | Konica Minolta Advanced Layers Inc | 発光装置の製造方法 |
CN102800784A (zh) * | 2011-05-25 | 2012-11-28 | 松下电器产业株式会社 | 光发射装置及使用该装置的照明设备 |
JP2013033903A (ja) * | 2011-07-29 | 2013-02-14 | Lg Innotek Co Ltd | 発光素子パッケージ及びこれを利用した照明システム |
JP2013183089A (ja) * | 2012-03-02 | 2013-09-12 | Idec Corp | 発光装置、照明装置、発光装置集合体および発光装置の製造方法 |
JP2013211462A (ja) * | 2012-03-30 | 2013-10-10 | Furukawa Electric Co Ltd:The | 発光ダイオード用封止樹脂フィルムおよび発光ダイオードパッケージ |
JP2013232484A (ja) * | 2012-04-27 | 2013-11-14 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP2014116637A (ja) * | 2014-02-17 | 2014-06-26 | Sharp Corp | 発光装置 |
WO2014103671A1 (ja) * | 2012-12-28 | 2014-07-03 | シャープ株式会社 | 発光装置 |
US8814396B2 (en) | 2010-03-29 | 2014-08-26 | Toshiba Lighting & Technology Corporation | Lighting apparatus |
JP2014529879A (ja) * | 2011-08-04 | 2014-11-13 | コーニンクレッカ フィリップス エヌ ヴェ | 光コンバータ及び該光コンバータを有する照明ユニット |
JP2015019106A (ja) * | 2009-07-06 | 2015-01-29 | 株式会社東芝 | 素子搭載用セラミックス基板並びに電子部品 |
JP2015144301A (ja) * | 2015-03-10 | 2015-08-06 | 日東電工株式会社 | 光半導体装置 |
JP2016072379A (ja) * | 2014-09-29 | 2016-05-09 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2019004134A (ja) * | 2017-06-12 | 2019-01-10 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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JP2002050800A (ja) * | 2000-05-24 | 2002-02-15 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
JP2005093896A (ja) * | 2003-09-19 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
JP2006339581A (ja) * | 2005-06-06 | 2006-12-14 | Shin Etsu Chem Co Ltd | 蛍光物質入りled発光装置 |
JP2007142474A (ja) * | 2003-04-24 | 2007-06-07 | Nichia Chem Ind Ltd | 半導体装置及びその製造方法 |
JP2007146154A (ja) * | 2005-10-31 | 2007-06-14 | Kyocera Corp | 波長変換器、照明装置および照明装置集合体 |
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JP2002050800A (ja) * | 2000-05-24 | 2002-02-15 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
JP2007142474A (ja) * | 2003-04-24 | 2007-06-07 | Nichia Chem Ind Ltd | 半導体装置及びその製造方法 |
JP2005093896A (ja) * | 2003-09-19 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
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Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010123802A (ja) * | 2008-11-20 | 2010-06-03 | Nitto Denko Corp | 光半導体封止用シート |
JP2015019106A (ja) * | 2009-07-06 | 2015-01-29 | 株式会社東芝 | 素子搭載用セラミックス基板並びに電子部品 |
EP2355195A3 (en) * | 2010-02-02 | 2014-07-23 | Nitto Denko Corporation | Semiconductor light-emitting device, its encapsulation sheet and method for producing said device |
CN102163683A (zh) * | 2010-02-02 | 2011-08-24 | 日东电工株式会社 | 光学半导体装置 |
US9190584B2 (en) | 2010-02-02 | 2015-11-17 | Nitto Denko Corporation | Optical-semiconductor device |
US8814396B2 (en) | 2010-03-29 | 2014-08-26 | Toshiba Lighting & Technology Corporation | Lighting apparatus |
JP5842813B2 (ja) * | 2010-04-16 | 2016-01-13 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
US9153561B2 (en) | 2010-04-16 | 2015-10-06 | Nichia Corporation | Light-emitting device comprising a metal film on a substrate and manufacturing method for the same |
US10707188B2 (en) | 2010-04-16 | 2020-07-07 | Nichia Corporation | Light emitting device |
US9786637B2 (en) | 2010-04-16 | 2017-10-10 | Nichia Corporation | Light emitting device |
TWI565099B (zh) * | 2010-04-16 | 2017-01-01 | 日亞化學工業股份有限公司 | 發光裝置 |
US9245873B2 (en) | 2010-04-16 | 2016-01-26 | Nichia Corporation | Light emitting device |
WO2011129202A1 (ja) * | 2010-04-16 | 2011-10-20 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
TWI513063B (zh) * | 2010-04-16 | 2015-12-11 | Nichia Corp | 發光裝置及發光裝置之製造方法 |
JP2011238902A (ja) * | 2010-04-16 | 2011-11-24 | Nichia Chem Ind Ltd | 発光装置 |
JP2011258611A (ja) * | 2010-06-04 | 2011-12-22 | Sharp Corp | 発光装置 |
CN103839934A (zh) * | 2010-06-04 | 2014-06-04 | 夏普株式会社 | 发光装置 |
CN102313205A (zh) * | 2010-06-28 | 2012-01-11 | 东芝照明技术株式会社 | 发光模块以及包括该发光模块的照明器具 |
US8608340B2 (en) | 2010-06-28 | 2013-12-17 | Toshiba Lighting & Technology Corporation | Light-emitting module and lighting apparatus with the same |
JP2012109478A (ja) * | 2010-11-19 | 2012-06-07 | Toshiba Lighting & Technology Corp | 発光体および照明装置 |
CN102544244A (zh) * | 2010-12-10 | 2012-07-04 | 比亚迪股份有限公司 | 一种led组件的制备方法 |
CN102544244B (zh) * | 2010-12-10 | 2015-09-30 | 比亚迪股份有限公司 | 一种led组件的制备方法 |
JP2012186319A (ja) * | 2011-03-07 | 2012-09-27 | Konica Minolta Advanced Layers Inc | 発光装置の製造方法 |
CN102800784A (zh) * | 2011-05-25 | 2012-11-28 | 松下电器产业株式会社 | 光发射装置及使用该装置的照明设备 |
JP2013033903A (ja) * | 2011-07-29 | 2013-02-14 | Lg Innotek Co Ltd | 発光素子パッケージ及びこれを利用した照明システム |
US9624426B2 (en) | 2011-08-04 | 2017-04-18 | Philips Lighting Holding B.V. | Light converter and lighting unit comprising such light converter |
JP2014529879A (ja) * | 2011-08-04 | 2014-11-13 | コーニンクレッカ フィリップス エヌ ヴェ | 光コンバータ及び該光コンバータを有する照明ユニット |
JP2013183089A (ja) * | 2012-03-02 | 2013-09-12 | Idec Corp | 発光装置、照明装置、発光装置集合体および発光装置の製造方法 |
JP2013211462A (ja) * | 2012-03-30 | 2013-10-10 | Furukawa Electric Co Ltd:The | 発光ダイオード用封止樹脂フィルムおよび発光ダイオードパッケージ |
JP2013232484A (ja) * | 2012-04-27 | 2013-11-14 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
US9504207B2 (en) | 2012-12-28 | 2016-11-29 | Sharp Kabushiki Kaisha | Light emitting device |
JPWO2014103671A1 (ja) * | 2012-12-28 | 2017-01-12 | シャープ株式会社 | 発光装置 |
WO2014103671A1 (ja) * | 2012-12-28 | 2014-07-03 | シャープ株式会社 | 発光装置 |
JP2014116637A (ja) * | 2014-02-17 | 2014-06-26 | Sharp Corp | 発光装置 |
JP2016072379A (ja) * | 2014-09-29 | 2016-05-09 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2015144301A (ja) * | 2015-03-10 | 2015-08-06 | 日東電工株式会社 | 光半導体装置 |
JP2019004134A (ja) * | 2017-06-12 | 2019-01-10 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP7137050B2 (ja) | 2017-06-12 | 2022-09-14 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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