JP2009088348A5 - - Google Patents

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Publication number
JP2009088348A5
JP2009088348A5 JP2007257768A JP2007257768A JP2009088348A5 JP 2009088348 A5 JP2009088348 A5 JP 2009088348A5 JP 2007257768 A JP2007257768 A JP 2007257768A JP 2007257768 A JP2007257768 A JP 2007257768A JP 2009088348 A5 JP2009088348 A5 JP 2009088348A5
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JP
Japan
Prior art keywords
substrate
heating unit
lamp
heating
semiconductor manufacturing
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JP2007257768A
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Japanese (ja)
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JP5465828B2 (en
JP2009088348A (en
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Priority to JP2007257768A priority Critical patent/JP5465828B2/en
Priority claimed from JP2007257768A external-priority patent/JP5465828B2/en
Publication of JP2009088348A publication Critical patent/JP2009088348A/en
Publication of JP2009088348A5 publication Critical patent/JP2009088348A5/ja
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Claims (2)

基板加熱手段としてランプ加熱ユニットを具備する半導体製造装置に於いて、前記ランプ加熱ユニットのランプが基板に対向する加熱部と該加熱部に連続する端部を具備し、該端部は該端部からの輻射熱を反射する端部カバーで覆われたことを特徴とする基板処理装置。 In a semiconductor manufacturing apparatus including a lamp heating unit as a substrate heating means, a lamp of the lamp heating unit includes a heating portion facing the substrate and an end continuous to the heating portion, and the end is the end A substrate processing apparatus covered with an end cover that reflects radiant heat from the substrate . ランプ加熱ユニットのランプが基板に対向する加熱部と該加熱部に連続する端部を具備し、該端部は該端部からの輻射熱を反射する端部カバーで覆われた基板処理装置を用いた半導体製造方法であって、処理室内に基板を搬入する工程と、前記処理室に搬入された基板を前記加熱部が加熱する工程とを有する半導体製造方法。The lamp of the lamp heating unit includes a heating unit that faces the substrate, and an end continuous to the heating unit, and the end is covered with an end cover that reflects radiant heat from the end. A semiconductor manufacturing method, comprising: a step of carrying a substrate into a processing chamber; and a step of heating the substrate carried into the processing chamber by the heating unit.
JP2007257768A 2007-10-01 2007-10-01 Substrate processing apparatus and semiconductor device manufacturing method Active JP5465828B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007257768A JP5465828B2 (en) 2007-10-01 2007-10-01 Substrate processing apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007257768A JP5465828B2 (en) 2007-10-01 2007-10-01 Substrate processing apparatus and semiconductor device manufacturing method

Publications (3)

Publication Number Publication Date
JP2009088348A JP2009088348A (en) 2009-04-23
JP2009088348A5 true JP2009088348A5 (en) 2010-11-18
JP5465828B2 JP5465828B2 (en) 2014-04-09

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JP2007257768A Active JP5465828B2 (en) 2007-10-01 2007-10-01 Substrate processing apparatus and semiconductor device manufacturing method

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JP (1) JP5465828B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6012933B2 (en) * 2011-04-26 2016-10-25 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method
KR101331420B1 (en) 2011-03-04 2013-11-21 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus and method of manufacturing semiconductor device
JP7227350B2 (en) * 2019-03-20 2023-02-21 株式会社Kokusai Electric Substrate processing apparatus, processing vessel, reflector, and method for manufacturing semiconductor device
KR102656121B1 (en) * 2021-12-24 2024-04-12 (주)보부하이테크 Heater structure with improved welding defect and crack

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154618A (en) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd Vapor growth apparatus
JPH0532956Y2 (en) * 1987-09-24 1993-08-23
JPH08292667A (en) * 1995-04-21 1996-11-05 Tec Corp Heat and fixing device
JP2000114196A (en) * 1998-08-06 2000-04-21 Ushio Inc Cooling structure of light projecting heating apparatus
JP3733811B2 (en) * 1999-02-16 2006-01-11 ウシオ電機株式会社 Light irradiation type heat treatment equipment
JP4004765B2 (en) * 2000-10-10 2007-11-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

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