JP2009076888A - センサチップ - Google Patents
センサチップ Download PDFInfo
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- JP2009076888A JP2009076888A JP2008214341A JP2008214341A JP2009076888A JP 2009076888 A JP2009076888 A JP 2009076888A JP 2008214341 A JP2008214341 A JP 2008214341A JP 2008214341 A JP2008214341 A JP 2008214341A JP 2009076888 A JP2009076888 A JP 2009076888A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000005291 magnetic effect Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 5
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 3
- 230000003068 static effect Effects 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract description 7
- 238000002955 isolation Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 71
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
- G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Bipolar Integrated Circuits (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Abstract
【解決手段】センサ素子31と該センサ素子31の制御回路32とが同じ半導体基板10に形成されてなるセンサチップ100であって、制御回路32が、半導体基板10においてPN接合分離された複数の回路素子32a,32bを有してなり、複数の回路素子32a,32bのうち、少なくとも1個の回路素子上に、該回路素子を取り囲む導電膜21,22が形成され、該導電膜21,22が、所定の電位V1,V2に固定されてなるセンサチップ100とする。
【選択図】図1
Description
あるいは、帯電した場合であっても、該導電膜21〜23の電位V1〜V3によって、該導電膜21〜23に取り囲まれた回路素子32a〜32cへの帯電電荷の影響を抑制して、回路素子32a〜32cの特性不良を防止することが可能である。例えば、図3に示す抵抗素子32cは、図9に示した抵抗素子に較べて、寄生トランジスタの動作やリークが発生し難い回路素子とすることが可能である。
80 半導体チップ
10 半導体基板
21〜23,24a〜26a,24b〜26b,27 導電膜
31 センサ素子(磁気抵抗素子)
16 強磁性体薄膜
32 制御回路
32a,32d〜32i 回路素子(バイポーラトランジスタ素子)
32b,32c,32j 回路素子(抵抗素子)
43 P+型素子分離領域
Claims (13)
- センサ素子と該センサ素子の制御回路とが同じ半導体基板に形成されてなるセンサチップであって、
前記制御回路が、前記半導体基板においてPN接合分離された複数の回路素子を有してなり、
前記複数の回路素子のうち、少なくとも1個の回路素子上に、該回路素子を取り囲む導電膜が形成され、
該導電膜が、所定の電位に固定されてなることを特徴とするセンサチップ。 - 前記導電膜が、
前記回路素子における第2導電型領域に挟まれた第1導電型領域を覆うように形成されてなることを特徴とする請求項1に記載のセンサチップ。 - 前記回路素子が、
バイポーラトランジスタ素子または抵抗素子であることを特徴とする請求項1または2に記載のセンサチップ。 - 前記導電膜が、前記回路素子に接続する配線層と異なる膜であることを特徴とする請求項1乃至3のいずれか一項に記載のセンサチップ。
- 前記導電膜が、多結晶シリコン、チタン−タングステンまたはアルミニウムのいずれかであることを特徴とする請求項1乃至4のいずれか一項に記載のセンサチップ。
- 前記センサ素子が、磁気抵抗素子であり、
該磁気抵抗素子と前記導電膜が、同じ材質で同時に形成されることを特徴とする請求項1乃至4のいずれか一項に記載のセンサチップ。 - 前記材質が、ニッケル−鉄合金またはニッケル−コバルト合金であることを特徴とする請求項6に記載のセンサチップ。
- 前記導電膜が、
前記回路素子の外周を取り囲むようにして、リング形状に形成されてなることを特徴とする請求項1乃至7のいずれか一項に記載のセンサチップ。 - 前記導電膜が、
前記回路素子の全面を覆うように形成されてなることを特徴とする請求項1乃至7のいずれか一項に記載のセンサチップ。 - 前記複数の回路素子のうち、2個以上の回路素子上に、
前記導電膜が、それぞれ分離して形成されてなり、
前記導電膜が、それぞれ異なる電位に固定されることを特徴とする請求項8または9に記載のセンサチップ。 - 前記電位が、前記回路素子に印加される最高電位であることを特徴とする請求項8乃至10のいずれか一項に記載のセンサチップ。
- 前記センサ素子が、磁界の変化を検出する磁気センサ素子であり、
前記センサチップが、
回転体に隣接して配置され、前記回転体の回転に伴う磁界の変化の測定に用いられることを特徴とする請求項1乃至11のいずれか一項に記載のセンサチップ。 - 前記センサチップが、
車に搭載されて用いられることを特徴とする請求項1乃至12のいずれか一項に記載のセンサチップ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008214341A JP5243147B2 (ja) | 2007-08-29 | 2008-08-22 | センサチップ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007223161 | 2007-08-29 | ||
JP2007223161 | 2007-08-29 | ||
JP2008214341A JP5243147B2 (ja) | 2007-08-29 | 2008-08-22 | センサチップ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009076888A true JP2009076888A (ja) | 2009-04-09 |
JP5243147B2 JP5243147B2 (ja) | 2013-07-24 |
Family
ID=40299368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008214341A Expired - Fee Related JP5243147B2 (ja) | 2007-08-29 | 2008-08-22 | センサチップ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090057795A1 (ja) |
JP (1) | JP5243147B2 (ja) |
CN (1) | CN101378070A (ja) |
DE (1) | DE102008045001A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014203075A1 (de) | 2013-10-17 | 2015-04-23 | Mitsubishi Electric Corp. | Magnetsensor und Verfahren zu dessen Herstellung |
JP2017103385A (ja) * | 2015-12-03 | 2017-06-08 | 株式会社東海理化電機製作所 | 半導体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5766321B1 (ja) | 2014-03-07 | 2015-08-19 | 三菱電機株式会社 | Tmr磁気センサ、及びその製造方法 |
CN108279028B (zh) * | 2018-01-19 | 2019-08-02 | 京东方科技集团股份有限公司 | 光电检测结构及其制作方法、光电检测装置 |
CN111398879B (zh) * | 2020-03-09 | 2021-06-18 | 兰州大学 | 一种基于p-n结光致磁阻传感器的新方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207477A (ja) * | 2002-12-25 | 2004-07-22 | Sanken Electric Co Ltd | ホール素子を有する半導体装置 |
JP2004264205A (ja) * | 2003-03-03 | 2004-09-24 | Denso Corp | 磁気センサ及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3374680B2 (ja) * | 1996-11-06 | 2003-02-10 | 株式会社デンソー | 半導体装置の製造方法 |
KR100590211B1 (ko) * | 2002-11-21 | 2006-06-15 | 가부시키가이샤 덴소 | 자기 임피던스 소자, 그를 이용한 센서 장치 및 그 제조방법 |
JP2005181066A (ja) * | 2003-12-18 | 2005-07-07 | Denso Corp | 圧力センサ |
-
2008
- 2008-08-22 JP JP2008214341A patent/JP5243147B2/ja not_active Expired - Fee Related
- 2008-08-26 US US12/230,262 patent/US20090057795A1/en not_active Abandoned
- 2008-08-29 CN CNA2008102142904A patent/CN101378070A/zh active Pending
- 2008-08-29 DE DE102008045001A patent/DE102008045001A1/de not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207477A (ja) * | 2002-12-25 | 2004-07-22 | Sanken Electric Co Ltd | ホール素子を有する半導体装置 |
JP2004264205A (ja) * | 2003-03-03 | 2004-09-24 | Denso Corp | 磁気センサ及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014203075A1 (de) | 2013-10-17 | 2015-04-23 | Mitsubishi Electric Corp. | Magnetsensor und Verfahren zu dessen Herstellung |
US9625536B2 (en) | 2013-10-17 | 2017-04-18 | Mitsubishi Electric Corporation | Magnetic sensor and method for manufacturing the same |
JP2017103385A (ja) * | 2015-12-03 | 2017-06-08 | 株式会社東海理化電機製作所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101378070A (zh) | 2009-03-04 |
DE102008045001A1 (de) | 2009-03-05 |
US20090057795A1 (en) | 2009-03-05 |
JP5243147B2 (ja) | 2013-07-24 |
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