DE242880C
(ja)
|
|
|
|
|
DE206607C
(ja)
|
|
|
|
|
DE221563C
(ja)
|
|
|
|
|
DE224448C
(ja)
|
|
|
|
|
GB1242527A
(en)
|
1967-10-20 |
1971-08-11 |
Kodak Ltd |
Optical instruments
|
US3573975A
(en)
|
1968-07-10 |
1971-04-06 |
Ibm |
Photochemical fabrication process
|
ATE1462T1
(de)
|
1979-07-27 |
1982-08-15 |
Werner W. Dr. Tabarelli |
Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
|
FR2474708B1
(fr)
|
1980-01-24 |
1987-02-20 |
Dme |
Procede de microphotolithographie a haute resolution de traits
|
JPS5754317A
(en)
|
1980-09-19 |
1982-03-31 |
Hitachi Ltd |
Method and device for forming pattern
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
US4509852A
(en)
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
US4390273A
(en)
|
1981-02-17 |
1983-06-28 |
Censor Patent-Und Versuchsanstalt |
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
DD206607A1
(de)
|
1982-06-16 |
1984-02-01 |
Mikroelektronik Zt Forsch Tech |
Verfahren und vorrichtung zur beseitigung von interferenzeffekten
|
DD242880A1
(de)
|
1983-01-31 |
1987-02-11 |
Kuch Karl Heinz |
Einrichtung zur fotolithografischen strukturuebertragung
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
JPS6265326A
(ja)
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
JPS62121417A
(ja)
|
1985-11-22 |
1987-06-02 |
Hitachi Ltd |
液浸対物レンズ装置
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
JPS6412515A
(en)
|
1987-07-07 |
1989-01-17 |
Matsushita Electric Ind Co Ltd |
Aluminum electrolytic capacitor
|
US5040020A
(en)
|
1988-03-31 |
1991-08-13 |
Cornell Research Foundation, Inc. |
Self-aligned, high resolution resonant dielectric lithography
|
JPH0828319B2
(ja)
|
1989-04-21 |
1996-03-21 |
株式会社日立製作所 |
投影露光装置
|
JPH03209479A
(ja)
|
1989-09-06 |
1991-09-12 |
Sanee Giken Kk |
露光方法
|
NL9000503A
(nl)
|
1990-03-05 |
1991-10-01 |
Asm Lithography Bv |
Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat.
|
US5121256A
(en)
|
1991-03-14 |
1992-06-09 |
The Board Of Trustees Of The Leland Stanford Junior University |
Lithography system employing a solid immersion lens
|
JPH04305915A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH04305917A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
JP2520833B2
(ja)
|
1992-12-21 |
1996-07-31 |
東京エレクトロン株式会社 |
浸漬式の液処理装置
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
JPH08219718A
(ja)
|
1995-02-08 |
1996-08-30 |
Nikon Corp |
面位置検出装置
|
JP3689949B2
(ja)
|
1995-12-19 |
2005-08-31 |
株式会社ニコン |
投影露光装置、及び該投影露光装置を用いたパターン形成方法
|
JPH1012515A
(ja)
*
|
1996-06-20 |
1998-01-16 |
Nikon Corp |
投影露光装置
|
WO1998009278A1
(en)
|
1996-08-26 |
1998-03-05 |
Digital Papyrus Technologies |
Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
|
US5825043A
(en)
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
JP3612920B2
(ja)
|
1997-02-14 |
2005-01-26 |
ソニー株式会社 |
光学記録媒体の原盤作製用露光装置
|
JPH10255319A
(ja)
|
1997-03-12 |
1998-09-25 |
Hitachi Maxell Ltd |
原盤露光装置及び方法
|
JP3747566B2
(ja)
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
US6330052B1
(en)
|
1997-06-13 |
2001-12-11 |
Canon Kabushiki Kaisha |
Exposure apparatus and its control method, stage apparatus, and device manufacturing method
|
US5900354A
(en)
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
JPH11135420A
(ja)
|
1997-10-30 |
1999-05-21 |
Nikon Corp |
投影露光装置
|
WO1999027568A1
(fr)
|
1997-11-21 |
1999-06-03 |
Nikon Corporation |
Graveur de motifs a projection et procede de sensibilisation a projection
|
JPH11176727A
(ja)
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
EP1039511A4
(en)
|
1997-12-12 |
2005-03-02 |
Nikon Corp |
PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
|
WO1999049504A1
(fr)
|
1998-03-26 |
1999-09-30 |
Nikon Corporation |
Procede et systeme d'exposition par projection
|
JP2000058436A
(ja)
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
TWI242111B
(en)
|
1999-04-19 |
2005-10-21 |
Asml Netherlands Bv |
Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
|
JP4504479B2
(ja)
|
1999-09-21 |
2010-07-14 |
オリンパス株式会社 |
顕微鏡用液浸対物レンズ
|
TW591653B
(en)
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
EP1500186A2
(en)
*
|
2001-08-14 |
2005-01-26 |
Redline Communications Inc. |
An adaptive pre-distortion method and apparatus for digital rf transmitters
|
US6600547B2
(en)
|
2001-09-24 |
2003-07-29 |
Nikon Corporation |
Sliding seal
|
US6897941B2
(en)
|
2001-11-07 |
2005-05-24 |
Applied Materials, Inc. |
Optical spot grid array printer
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
SG121818A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
CN100568101C
(zh)
|
2002-11-12 |
2009-12-09 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
CN101470360B
(zh)
|
2002-11-12 |
2013-07-24 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
EP1420300B1
(en)
*
|
2002-11-12 |
2015-07-29 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP1420302A1
(en)
|
2002-11-18 |
2004-05-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
KR101157002B1
(ko)
|
2002-12-10 |
2012-06-21 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
WO2004053951A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光方法及び露光装置並びにデバイス製造方法
|
WO2004053950A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
JP4232449B2
(ja)
|
2002-12-10 |
2009-03-04 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
US7242455B2
(en)
|
2002-12-10 |
2007-07-10 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
JP2004301825A
(ja)
|
2002-12-10 |
2004-10-28 |
Nikon Corp |
面位置検出装置、露光方法、及びデバイス製造方法
|
DE10257766A1
(de)
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
WO2004053955A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
SG171468A1
(en)
|
2002-12-10 |
2011-06-29 |
Nikon Corp |
Exposure apparatus and method for producing device
|
AU2003289272A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Surface position detection apparatus, exposure method, and device porducing method
|
KR101101737B1
(ko)
|
2002-12-10 |
2012-01-05 |
가부시키가이샤 니콘 |
노광장치 및 노광방법, 디바이스 제조방법
|
JP3997199B2
(ja)
|
2002-12-10 |
2007-10-24 |
キヤノン株式会社 |
露光方法及び装置
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
CN1717776A
(zh)
|
2002-12-10 |
2006-01-04 |
株式会社尼康 |
光学元件及使用该光学元件的投影曝光装置
|
CN1723541B
(zh)
|
2002-12-10 |
2010-06-02 |
株式会社尼康 |
曝光装置和器件制造方法
|
DE60326384D1
(de)
|
2002-12-13 |
2009-04-09 |
Koninkl Philips Electronics Nv |
Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
|
CN1316482C
(zh)
|
2002-12-19 |
2007-05-16 |
皇家飞利浦电子股份有限公司 |
照射层上斑点的方法和装置
|
EP1584089B1
(en)
|
2002-12-19 |
2006-08-02 |
Koninklijke Philips Electronics N.V. |
Method and device for irradiating spots on a layer
|
JP3915789B2
(ja)
|
2003-03-13 |
2007-05-16 |
セイコーエプソン株式会社 |
カラーフィルタ基板の製造方法
|
WO2004083954A1
(ja)
|
2003-03-20 |
2004-09-30 |
Sumitomo Electric Industries, Ltd. |
波長変換器
|
KR101364928B1
(ko)
|
2003-04-10 |
2014-02-19 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
|
WO2004090633A2
(en)
|
2003-04-10 |
2004-10-21 |
Nikon Corporation |
An electro-osmotic element for an immersion lithography apparatus
|
SG10201404132YA
(en)
|
2003-04-11 |
2014-09-26 |
Nippon Kogaku Kk |
Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP1477856A1
(en)
|
2003-05-13 |
2004-11-17 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7274472B2
(en)
|
2003-05-28 |
2007-09-25 |
Timbre Technologies, Inc. |
Resolution enhanced optical metrology
|
DE10324477A1
(de)
|
2003-05-30 |
2004-12-30 |
Carl Zeiss Smt Ag |
Mikrolithographische Projektionsbelichtungsanlage
|
EP2261742A3
(en)
|
2003-06-11 |
2011-05-25 |
ASML Netherlands BV |
Lithographic apparatus and device manufacturing method.
|
JP2005019616A
(ja)
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
EP1498778A1
(en)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP3862678B2
(ja)
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
CN102854755A
(zh)
*
|
2003-07-09 |
2013-01-02 |
株式会社尼康 |
曝光装置
|
WO2005006416A1
(ja)
*
|
2003-07-09 |
2005-01-20 |
Nikon Corporation |
結合装置、露光装置、及びデバイス製造方法
|
SG109000A1
(en)
|
2003-07-16 |
2005-02-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
JP4378136B2
(ja)
|
2003-09-04 |
2009-12-02 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP3870182B2
(ja)
|
2003-09-09 |
2007-01-17 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP2005159322A
(ja)
|
2003-10-31 |
2005-06-16 |
Nikon Corp |
定盤、ステージ装置及び露光装置並びに露光方法
|
JP2005175016A
(ja)
|
2003-12-08 |
2005-06-30 |
Canon Inc |
基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
|
JP2005175034A
(ja)
|
2003-12-09 |
2005-06-30 |
Canon Inc |
露光装置
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
JP2005191393A
(ja)
|
2003-12-26 |
2005-07-14 |
Canon Inc |
露光方法及び装置
|
JP2005191381A
(ja)
|
2003-12-26 |
2005-07-14 |
Canon Inc |
露光方法及び装置
|
JP4429023B2
(ja)
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP4018647B2
(ja)
|
2004-02-09 |
2007-12-05 |
キヤノン株式会社 |
投影露光装置およびデバイス製造方法
|
JP4510494B2
(ja)
|
2004-03-29 |
2010-07-21 |
キヤノン株式会社 |
露光装置
|
JP2005286068A
(ja)
|
2004-03-29 |
2005-10-13 |
Canon Inc |
露光装置及び方法
|
US7271917B2
(en)
*
|
2005-05-03 |
2007-09-18 |
Asml Netherlands B.V. |
Lithographic apparatus, position quantity detection system and method
|