JP2009009957A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009009957A JP2009009957A JP2007167063A JP2007167063A JP2009009957A JP 2009009957 A JP2009009957 A JP 2009009957A JP 2007167063 A JP2007167063 A JP 2007167063A JP 2007167063 A JP2007167063 A JP 2007167063A JP 2009009957 A JP2009009957 A JP 2009009957A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
- 239000002184 metal Substances 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims description 22
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 abstract description 13
- 230000035882 stress Effects 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000020169 heat generation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- Y10S257/924—Active solid-state devices, e.g. transistors, solid-state diodes with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap
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- Condensed Matter Physics & Semiconductors (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】表面電極を形成した半導体チップ2をメタルキャップ1の平坦部に固着し、メタルキャップ1の側壁部を外部端子13として兼用している。メタルキャップ1に、半導体チップ2を横切るようにスリット7を形成することによって、半導体チップ2とメタルキャップ1との固着領域を小さく分割し、それぞれの固着領域にかかる熱応力を小さくしている。これにより、それぞれの固着領域において剥離を防止でき、全体として信頼性を向上した小型の半導体装置が得られる。
【選択図】図3
Description
2 半導体チップ
3 固着材
4 ドレイン電極
5 ゲート電極
6 ソース電極
7 スリット
8 耐熱テープ
9 ヒーター
11 平坦部
12 側壁部
13 外部接続端子
15 表面電極
Claims (6)
- 一主面に表面電極を有し、前記一主面とは反対側の面を有する半導体チップと、
半導体チップの前記反対側の面が固着される平坦部と、少なくとも前記平坦部の対向する2辺に、前記平坦部と同一材料で形成された側壁部を有するメタルキャップを含み、
前記側壁部は、前記半導体チップの表面電極と同じ側に外部接続端子が形成され、
前記平坦部は、前記半導体チップが固着される面からその反対側の面まで貫通するスリットを有しており、前記スリットは前記半導体チップを横切るように形成され、前記平坦部と前記半導体チップとの固着領域が前記スリットによって複数に分割されている半導体装置。 - 前記スリットの幅が前記平坦部の厚さの1/10以上であり、かつ前記半導体チップの一辺の長さに対して1/3以下である請求項1記載の半導体装置。
- 前記スリットの形状が十字形である請求項1または2記載の半導体装置。
- それぞれの前記固着領域の形状が四角形である請求項3記載の半導体装置。
- それぞれの前記固着領域の形状が三角形である請求項3記載の半導体装置。
- 前記半導体チップを前記平坦部に固着する固着材が前記スリットの内部にも固着している請求項1乃至5のいずれか一に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007167063A JP2009009957A (ja) | 2007-06-26 | 2007-06-26 | 半導体装置 |
US12/146,864 US8076771B2 (en) | 2007-06-26 | 2008-06-26 | Semiconductor device having metal cap divided by slit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007167063A JP2009009957A (ja) | 2007-06-26 | 2007-06-26 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
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JP2009009957A true JP2009009957A (ja) | 2009-01-15 |
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ID=40159397
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Application Number | Title | Priority Date | Filing Date |
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JP2007167063A Pending JP2009009957A (ja) | 2007-06-26 | 2007-06-26 | 半導体装置 |
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US (1) | US8076771B2 (ja) |
JP (1) | JP2009009957A (ja) |
Cited By (5)
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JP2013069390A (ja) * | 2011-09-26 | 2013-04-18 | Dainippon Printing Co Ltd | サスペンション用基板、サスペンション、ヘッド付サスペンション、およびハードディスクドライブ |
US8476550B2 (en) * | 2010-08-25 | 2013-07-02 | Canon Kabushiki Kaisha | Manufacturing method of hermetically sealed container |
KR200474757Y1 (ko) * | 2012-11-15 | 2014-10-13 | 경기도 | 구급용 들것의 시트 |
JP2020123654A (ja) * | 2019-01-30 | 2020-08-13 | 京セラ株式会社 | 配線基板および実装構造 |
JP7298799B1 (ja) * | 2022-10-26 | 2023-06-27 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8907472B2 (en) | 2013-02-07 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC package comprising perforated foil sheet |
JP6252550B2 (ja) * | 2014-07-31 | 2017-12-27 | 株式会社デンソー | 電子装置及びそれを用いた駆動装置、ならびに電子装置の製造方法 |
JP6565973B2 (ja) * | 2017-06-29 | 2019-08-28 | 日亜化学工業株式会社 | 実装用部品、それを用いた半導体装置及びその製造方法 |
WO2019005152A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | CHIP REAR FRONT STRUCTURES FOR AN ARROW CONTROL |
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US8476550B2 (en) * | 2010-08-25 | 2013-07-02 | Canon Kabushiki Kaisha | Manufacturing method of hermetically sealed container |
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JP2020123654A (ja) * | 2019-01-30 | 2020-08-13 | 京セラ株式会社 | 配線基板および実装構造 |
JP7283909B2 (ja) | 2019-01-30 | 2023-05-30 | 京セラ株式会社 | 配線基板および実装構造 |
JP7298799B1 (ja) * | 2022-10-26 | 2023-06-27 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
WO2024089817A1 (ja) * | 2022-10-26 | 2024-05-02 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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US8076771B2 (en) | 2011-12-13 |
US20090001555A1 (en) | 2009-01-01 |
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