JP2008544521A - 半導体ナノワイヤトランジスタ - Google Patents
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- 239000002070 nanowire Substances 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 54
- 230000003071 parasitic effect Effects 0.000 claims abstract description 7
- 230000005669 field effect Effects 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000012212 insulator Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 claims description 4
- 238000006731 degradation reaction Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 8
- 229910000673 Indium arsenide Inorganic materials 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 n ++- Si Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
Description
Claims (13)
- 第1バンドギャップを持つ材料からなりかつトランジスタの電流チャネルを形成するナノワイヤ(205)と、
前記ナノワイヤの一方の端部に配置されたソース接点(240)と、
前記ナノワイヤの前記一方の端部と反対の端部に配置されたドレイン接点(250)と、
前記ナノワイヤの前記ソース接点と前記ドレイン接点との間の一部分を取り囲こみかつゲート領域(206)を画定するラップゲート接点(260)とを有するラップ絶縁体ゲート型電界効果トランジスタであって、
前記ナノワイヤは、前記第1バンドギャップと異なる第2バンドギャップを持つ材料からなる少なく1つのセグメントである少なくとも1つのヘテロ構造(270)を有し、
前記少なくとも1つのヘテロ構造は、前記ソース接点(240)、前記ドレイン接点(240)または前記ラップゲート接点(260)のうちの1つと連結していることを特徴とするラップ絶縁体ゲート型電界効果トランジスタ。 - 前記第2バンドギャップは前記第1バンドギャップより広いことを特徴とする請求項1に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 前記少なくとも1つのヘテロ構造(270)は、少なくとも一部が前記ゲート領域(206)内に配置されていることを特徴とする請求項1または請求項2に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 1つのヘテロ構造(270)が前記ソース接点(240)と連結していることを特徴とする請求項1乃至請求項3のうちのいずれか1項に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 1つのヘテロ構造(270)が前記ドレイン接点(250)と連結していることを特徴とする請求項1乃至請求項4のうちのいずれか1項に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 前記少なくとも1つのヘテロ構造(270)は、前記ナノワイヤ(205)の材料より狭いバンドギャップを持つ材料からなりかつ前記ナノワイヤ(205)と前記ソース接点(240)との間の接触抵抗と、前記ナノワイヤ(205)と前記ドレイン接点(250)との間の接触抵抗とのうちの少なくとも1つの接触抵抗を低減するために提供されていることを特徴とする請求項1乃至請求項5のうちのいずれか1項に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 第1のヘテロ構造(270)のうちの少なくとも1つが、少なくとも部分的にラップゲート接点(260)によって取り囲まれたナノワイヤ(205)の一部の内部に配置されており、
第2のヘテロ構造(270)が、ソース接点(240)またはドレイン接点(250)と連結して配置されていることを特徴とする請求項1または請求項2に記載のラップ絶縁体ゲート型電界効果トランジスタ。 - 大きいバンドギャップ材料からなる1つまたは複数のセグメントが、前記電界効果トランジスタの衝突イオン化速度を低減するためにドレイン・ゲート間の領域(208)中に提供されることを特徴とする請求項1に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 大きいバンドギャップ材料からなる1つまたは複数のセグメントが、前記電界効果トランジスタの衝突イオン化速度を低減するためにソース・ゲート間の領域(207)中に提供されていることを特徴とする請求項1に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 大きいバンドギャップ材料からなる1つまたは複数のセグメントが、前記電界効果トランジスタのオフ電流を低減するためにドレイン・ゲート間の領域(208)中に提供されていることを特徴とする請求項1に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 大きいバンドギャップ材料からなる1つまたは複数のセグメントが、前記電界効果トランジスタのドレイン誘発障壁低下を低減するためにゲート領域(206)中に提供されることを特徴とする請求項2に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 前記ソース接点、前記ドレイン接点または前記ラップゲート接点のうちの少なくとも2つに連結された外部接点が、寄生容量を減少させるために横木構造により配置されていることを特徴とする請求項1乃至請求項11のうちのいずれか1項に記載のラップ絶縁体ゲート型電界効果トランジスタ。
- 固有接触抵抗を低減するためにソース領域およびドレイン領域のそれぞれに配置された、ナノワイヤ(205)より狭いバンドギャップを持つ第1材料からなるヘテロ構造(970、971)の複数のセグメントと、
少なくとも一部が前記ゲート領域内に配置されかつ前記ドレイン領域(205)に延びている少なくとも1つのセグメント(972)であって、高フィールド領域における衝突発生プロセスを減少させるために前記ナノワイヤ(205)の材料より広いバンドギャップを持つ第2材料からなる前記少なくとも1つのセグメント(972)とを提供することによってアナログ応用のために最適化されていることを特徴とする請求項1に記載のラップ絶縁体ゲート型電界効果トランジスタ。
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SE0501376-8 | 2005-06-16 | ||
SE0501376 | 2005-06-16 | ||
PCT/SE2006/050204 WO2006135336A1 (en) | 2005-06-16 | 2006-06-16 | Semiconductor nanowire transistor |
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JP5255437B2 JP5255437B2 (ja) | 2013-08-07 |
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US (2) | US8344361B2 (ja) |
EP (2) | EP1891679A1 (ja) |
JP (1) | JP5255437B2 (ja) |
KR (1) | KR20080025147A (ja) |
CN (1) | CN101273459B (ja) |
AU (1) | AU2006258261A1 (ja) |
WO (2) | WO2006135337A1 (ja) |
Cited By (5)
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JP2008072104A (ja) * | 2006-09-15 | 2008-03-27 | Interuniv Micro Electronica Centrum Vzw | シリコンナノワイヤに基づくトンネル効果トランジスタ |
JP2015508575A (ja) * | 2012-01-05 | 2015-03-19 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 電界効果トランジスタ及びその形成方法 |
WO2018038512A1 (ko) * | 2016-08-22 | 2018-03-01 | 한양대학교 산학협력단 | 수직 터널링 전계효과 트랜지스터 및 이의 제조방법 |
JP2019145753A (ja) * | 2018-02-23 | 2019-08-29 | 富士通株式会社 | 半導体装置、受信機及び半導体装置の製造方法 |
JP2019153639A (ja) * | 2018-03-01 | 2019-09-12 | 富士通株式会社 | 半導体デバイス、受信機及び半導体デバイスの製造方法 |
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US8178403B2 (en) | 2006-09-18 | 2012-05-15 | Qunano Ab | Method of producing precision vertical and horizontal layers in a vertical semiconductor structure |
US8049203B2 (en) | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
CN101669219B (zh) | 2006-12-22 | 2011-10-05 | 昆南诺股份有限公司 | 带有直立式纳米线结构的led及其制作方法 |
US8183587B2 (en) | 2006-12-22 | 2012-05-22 | Qunano Ab | LED with upstanding nanowire structure and method of producing such |
US8227817B2 (en) | 2006-12-22 | 2012-07-24 | Qunano Ab | Elevated LED |
EP2095426A4 (en) * | 2006-12-22 | 2012-10-10 | Qunano Ab | NANOELECTRONIC STRUCTURE AND PRODUCTION METHOD THEREOF |
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Publication number | Publication date |
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CN101273459A (zh) | 2008-09-24 |
CN101273459B (zh) | 2013-01-02 |
EP1891679A1 (en) | 2008-02-27 |
AU2006258261A1 (en) | 2006-12-21 |
US8330143B2 (en) | 2012-12-11 |
EP2383785A3 (en) | 2012-02-22 |
WO2006135337A1 (en) | 2006-12-21 |
JP5255437B2 (ja) | 2013-08-07 |
US8344361B2 (en) | 2013-01-01 |
KR20080025147A (ko) | 2008-03-19 |
WO2006135336A1 (en) | 2006-12-21 |
US20090321716A1 (en) | 2009-12-31 |
US20090294757A1 (en) | 2009-12-03 |
EP2383785A2 (en) | 2011-11-02 |
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