JP2008532298A - Ledアレイ - Google Patents
Ledアレイ Download PDFInfo
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- JP2008532298A JP2008532298A JP2007557315A JP2007557315A JP2008532298A JP 2008532298 A JP2008532298 A JP 2008532298A JP 2007557315 A JP2007557315 A JP 2007557315A JP 2007557315 A JP2007557315 A JP 2007557315A JP 2008532298 A JP2008532298 A JP 2008532298A
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- Prior art keywords
- led array
- radiation
- semiconductor chip
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- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 230000005855 radiation Effects 0.000 claims abstract description 79
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 238000000605 extraction Methods 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000004020 luminiscence type Methods 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000007493 shaping process Methods 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 description 7
- 238000003491 array Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
−エピタキシ層列は20μm以下の範囲、特に10μmの範囲の厚さを有している;
−エピタキシ層列は、理想的にはエピタキシャルなエピタキシ層列における光線のほぼエルゴード的(ergodisch)な分配をもたらす混合構造を有する少なくとも1つの面を備えた少なくとも1つの半導体層を有している。すなわち、エピタキシ層列はできるだけエルゴード的に確率的な散乱特性を有している。
図2は、本発明によるLEDアレイの図1に示した実施例の平面図である。
Claims (16)
- それぞれ1つの放射線取出し面(5)を有する、放射線を発する複数の半導体チップ(2)を備えたLEDアレイであって、半導体チップ(2)により発せられた放射線(4)が、主として放射線取出し面(5)を通じて取り出されるようになっており、さらに、発せられた放射線(4)に対して透過性の透明なカバー体(8)が設けられている形式のものにおいて、
−透明なカバー体(8)が、半導体チップ(2)の放射線取出し面(5)に面した側の表面に、発せられた放射線(4)に対して透過性の透明な導電性の材料から成る1つまたは複数の導体路(9,10)を有しており、半導体チップ(2)が、放射線取出し面(5)にそれぞれ少なくとも1つの電気的なコンタクト(7)を有しており、該電気的なコンタクト(7)が、前記1つの導体路(9,10)または前記複数の導体路(9,10)のうちの少なくとも1つの導体路に接続されており、
−少なくとも1つのルミネッセンス変換物質が、透明なカバー体(8)に含まれており、かつ/または層(11)の形でカバー体(8)および/または半導体チップ(2)に被着されている
ことを特徴とするLEDアレイ。 - 透明な導電性の材料が、透明な導電性の酸化物である、請求項1記載のLEDアレイ。
- 透明な導電性の酸化物がITOである、請求項2記載のLEDアレイ。
- カバー体がカバープレート(8)である、請求項1から3までのいずれか1項記載のLEDアレイ。
- カバープレート(8)が、100μmまたはそれよりも小さい厚さ、有利には50μmまたはそれよりも小さい厚さを有している、請求項4記載のLEDアレイ。
- カバー体(8)がガラスから形成されている、請求項1から5までのいずれか1項記載のLEDアレイ。
- 電気的なコンタクト(7)が、はんだまたは導電性の接着剤から形成されている、請求項1から6までのいずれか1項記載のLEDアレイ。
- 半導体チップ(2)が、放射線取出し面(5)とは反対の側の底面(6)を有しており、該底面(6)によって半導体チップ(2)が支持体(1)に搭載されている、請求項1から7までのいずれか1項記載のLEDアレイ。
- 当該LEDアレイが、放射線を発する少なくとも4つの半導体チップ(2)を有している、請求項1から8までのいずれか1項記載のLEDアレイ。
- 当該LEDアレイが、半導体チップ(2)から発せられた放射線(4)のビーム成形のための少なくとも1つの光学素子(12)を有している、請求項1から9までのいずれか1項記載のLEDアレイ。
- 前記光学素子(12)と放射線取出し面(5)との間の間隔が300μmまたはそれよりも小さい、請求項10記載のLEDアレイ。
- 前記光学素子(12)が、CPC−、CEC−またはCHC−状の光学的な集光器である、請求項11または12記載のLEDアレイ。
- カバー体(8)が光学素子として形成されている、請求項1から12までのいずれか1項記載のLEDアレイ。
- カバー体(8)がカバーシートである、請求項1から12までのいずれか1項記載のLEDアレイ。
- 半導体チップ(2)が、III−V族化合物半導体材料を含有している、請求項1から14までのいずれか1項記載のLEDアレイ。
- 半導体チップ(2)が薄膜型の発光ダイオードチップである、請求項1から15までのいずれか1項記載のLEDアレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005009059 | 2005-02-28 | ||
DE102005019375A DE102005019375A1 (de) | 2005-02-28 | 2005-04-26 | LED-Array |
PCT/DE2006/000191 WO2006089508A1 (de) | 2005-02-28 | 2006-02-06 | Led-array |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008532298A true JP2008532298A (ja) | 2008-08-14 |
Family
ID=36325274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007557315A Pending JP2008532298A (ja) | 2005-02-28 | 2006-02-06 | Ledアレイ |
Country Status (8)
Country | Link |
---|---|
US (1) | US7726835B2 (ja) |
EP (1) | EP1854153B1 (ja) |
JP (1) | JP2008532298A (ja) |
KR (1) | KR101227582B1 (ja) |
CN (1) | CN101128942B (ja) |
DE (1) | DE102005019375A1 (ja) |
TW (1) | TWI307176B (ja) |
WO (1) | WO2006089508A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8686452B2 (en) | 2008-06-30 | 2014-04-01 | Osram Opto Semiconductors Gmbh | Optoelectronic apparatus |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008007297A2 (en) * | 2006-07-11 | 2008-01-17 | Koninklijke Philips Electronics N.V. | Transparent body comprising at least one embedded led |
DE102006046199A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US7737636B2 (en) * | 2006-11-09 | 2010-06-15 | Intematix Corporation | LED assembly with an LED and adjacent lens and method of making same |
DE202006017924U1 (de) | 2006-11-24 | 2008-03-27 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Beleuchtungseinheit mit einer LED-Lichtquelle |
DE102007011123A1 (de) | 2007-03-07 | 2008-09-11 | Osram Opto Semiconductors Gmbh | Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul |
WO2008152552A1 (en) * | 2007-06-13 | 2008-12-18 | Philips Intellectual Property & Standards Gmbh | Led lighting device |
CN101847646B (zh) * | 2010-02-02 | 2012-05-30 | 孙润光 | 一种无机发光二极管显示装置 |
DE102010014177A1 (de) | 2010-04-01 | 2011-10-06 | Jenoptik Polymer Systems Gmbh | Oberflächenemittierende Halbleiter-Leuchtdiode |
US8269235B2 (en) | 2010-04-26 | 2012-09-18 | Koninklijke Philips Electronics N.V. | Lighting system including collimators aligned with light emitting segments |
DE102011100710A1 (de) * | 2011-05-06 | 2012-11-08 | Osram Opto Semiconductors Gmbh | Konversionselement für Leuchtdioden und Herstellungsverfahren |
WO2013085874A1 (en) | 2011-12-05 | 2013-06-13 | Cooledge Lighting Inc. | Control of luminous intensity distribution from an array of point light sources |
US9397265B2 (en) | 2013-04-15 | 2016-07-19 | Nthdegree Technologies Worldwide Inc. | Layered conductive phosphor electrode for vertical LED and method for forming same |
FR3033939B1 (fr) | 2015-03-20 | 2018-04-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diode electroluminescente |
CN106353972A (zh) * | 2016-11-03 | 2017-01-25 | 河南百合特种光学研究院有限公司 | 一种led复合匀光器及使用该复合匀光器的曝光*** |
US10923635B2 (en) * | 2016-12-30 | 2021-02-16 | Lumileds Llc | Phosphor deposition system for LEDs |
DE102018126246A1 (de) * | 2018-10-22 | 2020-04-23 | Osram Opto Semiconductors Gmbh | Verbesserung der klebstoffschicht bei led flipchip anwendungen |
JP7288343B2 (ja) * | 2019-05-16 | 2023-06-07 | スタンレー電気株式会社 | 発光装置 |
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JPS6236561U (ja) * | 1985-08-22 | 1987-03-04 | ||
JPH0175294U (ja) * | 1987-11-09 | 1989-05-22 | ||
JPH11177147A (ja) * | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | 光半導体モジュール、およびその製造方法 |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP2004146835A (ja) * | 2002-10-22 | 2004-05-20 | Osram Opto Semiconductors Gmbh | Ledおよび発光変換体を有する光源、および発光変換体の製造方法 |
JP2004172578A (ja) * | 2002-09-02 | 2004-06-17 | Matsushita Electric Ind Co Ltd | 発光装置 |
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-
2005
- 2005-04-26 DE DE102005019375A patent/DE102005019375A1/de not_active Withdrawn
-
2006
- 2006-02-06 EP EP06705919.6A patent/EP1854153B1/de not_active Expired - Fee Related
- 2006-02-06 WO PCT/DE2006/000191 patent/WO2006089508A1/de active Application Filing
- 2006-02-06 US US11/816,951 patent/US7726835B2/en active Active
- 2006-02-06 KR KR1020077022068A patent/KR101227582B1/ko active IP Right Grant
- 2006-02-06 CN CN2006800058186A patent/CN101128942B/zh not_active Expired - Fee Related
- 2006-02-06 JP JP2007557315A patent/JP2008532298A/ja active Pending
- 2006-02-23 TW TW095106016A patent/TWI307176B/zh not_active IP Right Cessation
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JPS6236561U (ja) * | 1985-08-22 | 1987-03-04 | ||
JPH0175294U (ja) * | 1987-11-09 | 1989-05-22 | ||
JPH11177147A (ja) * | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | 光半導体モジュール、およびその製造方法 |
JP2004526307A (ja) * | 2001-01-31 | 2004-08-26 | ジェンテクス・コーポレーション | 高出力放射エミッタデバイスおよび電子部品用熱放散パッケージ |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP2004172578A (ja) * | 2002-09-02 | 2004-06-17 | Matsushita Electric Ind Co Ltd | 発光装置 |
JP2004146835A (ja) * | 2002-10-22 | 2004-05-20 | Osram Opto Semiconductors Gmbh | Ledおよび発光変換体を有する光源、および発光変換体の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8686452B2 (en) | 2008-06-30 | 2014-04-01 | Osram Opto Semiconductors Gmbh | Optoelectronic apparatus |
US9046673B2 (en) | 2008-06-30 | 2015-06-02 | Osram Opto Semiconductors Gmbh | Optoelectronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
US20090103297A1 (en) | 2009-04-23 |
DE102005019375A1 (de) | 2006-09-07 |
KR101227582B1 (ko) | 2013-01-29 |
TW200637039A (en) | 2006-10-16 |
US7726835B2 (en) | 2010-06-01 |
WO2006089508A1 (de) | 2006-08-31 |
EP1854153A1 (de) | 2007-11-14 |
CN101128942A (zh) | 2008-02-20 |
KR20070107794A (ko) | 2007-11-07 |
TWI307176B (en) | 2009-03-01 |
CN101128942B (zh) | 2011-11-16 |
EP1854153B1 (de) | 2019-01-23 |
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