JP2008523615A - 多色、広帯域または「白色」発光用の適合型短波長led - Google Patents
多色、広帯域または「白色」発光用の適合型短波長led Download PDFInfo
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Abstract
Description
半導体デバイスにおける層の積層に関して、「直に隣接する」とは、次の層が介在層がなく、連続的に続くことを意味し、「近くに隣接する」とは、次の層が1層または少数の介在層を経て連続的に続くことを意味し、「周囲の」とは、前および後の両方に連続的に続くことを意味する。
「電位井戸」とは、周囲の層より低い伝導帯エネルギまたは周囲の層より高い価電子帯エネルギ、あるいはその両方のエネルギを有する半導体デバイスにおける半導体の層を意味し、
「量子井戸」とは、量子化効果により、井戸における電子−正孔対の遷移エネルギを上昇するほど十分に薄く、一般的に厚さが100nm以下である電位井戸を意味し、
「遷移エネルギ」とは、電子−正孔再結合エネルギを意味し、
「格子整合される」とは、基板上のエピタキシャル膜などの2つの結晶質材料に関して、分離しているものと考えたときに各材料が格子定数を有し、これらの格子定数が実質的に等しく、一般的に互いの差が0.2%以下であり、さらに一般的に互いの差が0.1%以下であり、最も一般的には互いの差が0.01%以下であることを意味し、
「擬似格子整合」とは、エピタキシャル膜および基板などの所与の厚さの第1の結晶層および第2の結晶層に関し、分離しているものと考えたときに各層が格子定数を有し、これらの格子定数は、所与の厚さの第1の層が、不整合の欠点を実質的に持たずに、層の平面で第2の層の格子間隔を採用することができるほど十分に類似であることを意味する。
Claims (42)
- 短波長LEDおよび再発光半導体構造を備え、前記再発光半導体構造がpn接合内部に位置しない電位井戸を含む、適合型LED。
- 前記再発光半導体構造が、前記少なくとも1つの電位井戸の少なくとも1つに対して近くに隣接する吸収層をさらに備える、請求項1に記載の適合型LED。
- 前記再発光半導体構造が、前記少なくとも1つの電位井戸の少なくとも1つに対して直に隣接する吸収層をさらに備える、請求項1に記載の適合型LED。
- 前記再発光半導体構造が、第1の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第1の電位井戸と、前記第1の遷移エネルギに等しくない第2の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第2の電位井戸とを備える、請求項1に記載の適合型LED。
- 前記短波長LEDが紫外光LEDである、請求項1に記載の適合型LED。
- 前記短波長LEDが、緑色LED、青色LEDまたは紫色LEDである、請求項1に記載の適合型LED。
- 前記短波長LEDが青色LEDである、請求項1に記載の適合型LED。
- 前記再発光半導体構造が、青色波長光に対応する第1の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第1の電位井戸と、緑色波長光に対応する第2の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第2の電位井戸と、赤色波長光に対応する第3の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第3の電位井戸とを備える、請求項5に記載の適合型LED。
- 前記再発光半導体構造が、黄色波長光または緑色波長光に対応する第1の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第1の電位井戸と、橙色波長光または赤色波長光に対応する第2の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第2の電位井戸とを備える、請求項6に記載の適合型LED。
- 前記再発光半導体構造が、黄色波長光または緑色波長光に対応する第1の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第1の電位井戸と、橙色波長光または赤色波長光に対応する第2の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第2の電位井戸とを備える、請求項7に記載の適合型LED。
- 前記再発光半導体構造が、緑色波長光に対応する第1の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第1の電位井戸と、赤色波長光に対応する第2の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第2の電位井戸とを備える、請求項7に記載の適合型LED。
- 前記少なくとも1つの電位井戸が量子井戸を含む、請求項1に記載の適合型LED。
- 前記少なくとも1つの電位井戸が量子井戸を含む、請求項2に記載の適合型LED。
- 前記少なくとも1つの電位井戸が量子井戸を含む、請求項3に記載の適合型LED。
- 前記少なくとも1つの第1の電位井戸が第1の量子井戸を含み、前記少なくとも1つの第2の電位井戸が第2の量子井戸を含む、請求項4に記載の適合型LED。
- 前記少なくとも1つの電位井戸が量子井戸を含む、請求項5に記載の適合型LED。
- 前記少なくとも1つの電位井戸が量子井戸を含む、請求項6に記載の適合型LED。
- 前記少なくとも1つの電位井戸が量子井戸を含む、請求項7に記載の適合型LED。
- 前記少なくとも1つの第1の電位井戸が第1の量子井戸を含み、前記少なくとも1つの第2の電位井戸が第2の量子井戸を含み、前記少なくとも1つの第3の電位井戸が第3の量子井戸を含む、請求項8に記載の適合型LED。
- 前記少なくとも1つの第1の電位井戸が第1の量子井戸を含み、前記少なくとも1つの第2の電位井戸が第2の量子井戸を含む、請求項9に記載の適合型LED。
- 前記少なくとも1つの第1の電位井戸が第1の量子井戸を含み、前記少なくとも1つの第2の電位井戸が第2の量子井戸を含む、請求項10に記載の適合型LED。
- 前記少なくとも1つの第1の電位井戸が第1の量子井戸を含み、前記少なくとも1つの第2の電位井戸が第2の量子井戸を含む、請求項11に記載の適合型LED。
- 請求項1に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項1に記載の適合型LEDを備える、照明装置。
- 請求項2に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項2に記載の適合型LEDを備える、照明装置。
- 請求項6に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項6に記載の適合型LEDを備える、照明装置。
- 請求項10に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項10に記載の適合型LEDを備える、照明装置。
- 請求項12に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項12に記載の適合型LEDを備える、照明装置。
- 請求項13に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項13に記載の適合型LEDを備える、照明装置。
- 請求項17に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項17に記載の適合型LEDを備える、照明装置。
- 請求項21に記載の適合型LEDを備える、グラフィックディスプレイ装置。
- 請求項21に記載の適合型LEDを備える、照明装置。
- 前記再発光半導体構造が、黄色波長光に対応する第1の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第1の電位井戸を備える、請求項7に記載の適合型LED。
- 前記再発光半導体構造が、青色波長光に対応する第1の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第1の電位井戸と、黄色波長光に対応する第2の遷移エネルギを有し、pn接合内部に位置しない少なくとも1つの第2の電位井戸とを備える、請求項5に記載の適合型LED。
- 前記短波長LEDがIII−V半導体を備え、前記再発光半導体構造がII−VI半導体を備える、請求項1に記載の適合型LED。
- 前記短波長LEDがGaN半導体を備え、前記再発光半導体構造がII−VI半導体を備える、請求項1に記載の適合型LED。
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Application Number | Priority Date | Filing Date | Title |
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US11/009,217 | 2004-12-09 | ||
US11/009,217 US7402831B2 (en) | 2004-12-09 | 2004-12-09 | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
PCT/US2005/037648 WO2006062588A1 (en) | 2004-12-09 | 2005-10-18 | Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission |
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JP2008523615A true JP2008523615A (ja) | 2008-07-03 |
JP5059617B2 JP5059617B2 (ja) | 2012-10-24 |
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JP2011511446A (ja) * | 2008-01-31 | 2011-04-07 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス部品およびその製造方法 |
US8686451B2 (en) | 2008-01-31 | 2014-04-01 | Osram Opto Semiconductor Gmbh | Optical-electronic component and method for production thereof |
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JP2012532453A (ja) * | 2009-06-30 | 2012-12-13 | スリーエム イノベイティブ プロパティズ カンパニー | 調節可能な色温度を備えた白色光エレクトロルミネセンスデバイス |
JP2013512439A (ja) * | 2009-11-24 | 2013-04-11 | ユニバーシティ オブ フロリダ リサーチ ファウンデーション,インク. | 赤外線放射を感知する方法および装置 |
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US10134815B2 (en) | 2011-06-30 | 2018-11-20 | Nanoholdings, Llc | Method and apparatus for detecting infrared radiation with gain |
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JP2019062220A (ja) * | 2014-05-27 | 2019-04-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体デバイス及び照明装置 |
US10553748B2 (en) | 2014-05-27 | 2020-02-04 | Osram Opto Semiconductors Gmbh | Semiconductor component and illumination device |
US11393949B2 (en) | 2014-05-27 | 2022-07-19 | Osram Opto Semiconductors Gmbh | Semiconductor component and illumination device |
US10749058B2 (en) | 2015-06-11 | 2020-08-18 | University Of Florida Research Foundation, Incorporated | Monodisperse, IR-absorbing nanoparticles and related methods and devices |
Also Published As
Publication number | Publication date |
---|---|
US7700939B2 (en) | 2010-04-20 |
US20100155694A1 (en) | 2010-06-24 |
US20080272362A1 (en) | 2008-11-06 |
US20060124917A1 (en) | 2006-06-15 |
US20080272387A1 (en) | 2008-11-06 |
KR20070093092A (ko) | 2007-09-17 |
US7737430B2 (en) | 2010-06-15 |
US7700938B2 (en) | 2010-04-20 |
CN100490194C (zh) | 2009-05-20 |
WO2006062588A1 (en) | 2006-06-15 |
US7402831B2 (en) | 2008-07-22 |
CN101076897A (zh) | 2007-11-21 |
TW200637032A (en) | 2006-10-16 |
JP5059617B2 (ja) | 2012-10-24 |
US7902543B2 (en) | 2011-03-08 |
EP1831934A1 (en) | 2007-09-12 |
US20070051967A1 (en) | 2007-03-08 |
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