FR2932608B1 - Procede de croissance de nitrure d'elements du groupe iii. - Google Patents
Procede de croissance de nitrure d'elements du groupe iii.Info
- Publication number
- FR2932608B1 FR2932608B1 FR0853943A FR0853943A FR2932608B1 FR 2932608 B1 FR2932608 B1 FR 2932608B1 FR 0853943 A FR0853943 A FR 0853943A FR 0853943 A FR0853943 A FR 0853943A FR 2932608 B1 FR2932608 B1 FR 2932608B1
- Authority
- FR
- France
- Prior art keywords
- elements
- group iii
- growing nitride
- growing
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0853943A FR2932608B1 (fr) | 2008-06-13 | 2008-06-13 | Procede de croissance de nitrure d'elements du groupe iii. |
| PCT/EP2009/057273 WO2009150220A1 (fr) | 2008-06-13 | 2009-06-12 | Procede de croissance de nitrure d'elements du groupe iii |
| EP09761782A EP2304773A1 (fr) | 2008-06-13 | 2009-06-12 | Procede de croissance de nitrure d'elements du groupe iii |
| US12/997,796 US20110089537A1 (en) | 2008-06-13 | 2009-06-12 | Growing process for group iii nitride elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0853943A FR2932608B1 (fr) | 2008-06-13 | 2008-06-13 | Procede de croissance de nitrure d'elements du groupe iii. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2932608A1 FR2932608A1 (fr) | 2009-12-18 |
| FR2932608B1 true FR2932608B1 (fr) | 2011-04-22 |
Family
ID=40418895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0853943A Expired - Fee Related FR2932608B1 (fr) | 2008-06-13 | 2008-06-13 | Procede de croissance de nitrure d'elements du groupe iii. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20110089537A1 (fr) |
| EP (1) | EP2304773A1 (fr) |
| FR (1) | FR2932608B1 (fr) |
| WO (1) | WO2009150220A1 (fr) |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2807909B1 (fr) * | 2000-04-12 | 2006-07-28 | Centre Nat Rech Scient | COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL |
| DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| US6445009B1 (en) * | 2000-08-08 | 2002-09-03 | Centre National De La Recherche Scientifique | Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings |
| JP3872327B2 (ja) * | 2000-12-04 | 2007-01-24 | 日本碍子株式会社 | 半導体発光素子 |
| JP2002222989A (ja) * | 2001-01-26 | 2002-08-09 | Toshiba Corp | 半導体発光素子 |
| US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
| JP3791765B2 (ja) * | 2001-06-08 | 2006-06-28 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US7676307B2 (en) * | 2001-11-05 | 2010-03-09 | Ford Global Technologies | System and method for controlling a safety system of a vehicle in response to conditions sensed by tire sensors related applications |
| ATE467701T1 (de) * | 2003-08-08 | 2010-05-15 | Centre Nat Rech Scient | Verfahren zur herstellung von quantenpunkten aus indiumnitrid und erzeugnis enthaltend diese quantenpunkten |
| US7122827B2 (en) * | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
| JP2005260093A (ja) * | 2004-03-12 | 2005-09-22 | Yamaha Corp | 窒化ガリウムのヘテロエピタキシャル成長方法 |
| FR2875333B1 (fr) * | 2004-09-16 | 2006-12-15 | Centre Nat Rech Scient Cnrse | Realisation d'une couche de nitrure d'indium |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| FR2898434B1 (fr) * | 2006-03-13 | 2008-05-23 | Centre Nat Rech Scient | Diode electroluminescente blanche monolithique |
| FR2904008B1 (fr) * | 2006-07-18 | 2009-12-04 | Centre Nat Rech Scient | NOUVEAU PROCEDE POUR LA CROISSANCE DE NITRURES D'ELEMENTS DU GROUPE IIIb. |
| WO2008057454A2 (fr) * | 2006-11-02 | 2008-05-15 | The Regents Of The University Of California | Croissance et fabrication de films de nitrure d'aluminium autonomes et de densité de dislocation réduite par épitaxie en phase vapeur aux hydrures |
| FR2908925B1 (fr) * | 2006-11-17 | 2009-02-20 | St Microelectronics Sa | PROCEDE D'INTEGRATION D'UN COMPOSANT DE TYPE III-N, TEL QUE DU GaN, SUR UN SUBSTRAT DE SILICIUM (001) NOMINAL |
| KR101002336B1 (ko) * | 2008-02-04 | 2010-12-20 | 엘지디스플레이 주식회사 | 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법 |
-
2008
- 2008-06-13 FR FR0853943A patent/FR2932608B1/fr not_active Expired - Fee Related
-
2009
- 2009-06-12 US US12/997,796 patent/US20110089537A1/en not_active Abandoned
- 2009-06-12 EP EP09761782A patent/EP2304773A1/fr not_active Withdrawn
- 2009-06-12 WO PCT/EP2009/057273 patent/WO2009150220A1/fr active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| FR2932608A1 (fr) | 2009-12-18 |
| US20110089537A1 (en) | 2011-04-21 |
| EP2304773A1 (fr) | 2011-04-06 |
| WO2009150220A1 (fr) | 2009-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20100226 |
|
| TQ | Partial transmission of property | ||
| RN | Application for restoration | ||
| FC | Decision of inpi director general to approve request for restoration | ||
| ST | Notification of lapse |
Effective date: 20140228 |