JP2008503167A - 電流モード計装用増幅器 - Google Patents
電流モード計装用増幅器 Download PDFInfo
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- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
- H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/38—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/38—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers
- H03F3/387—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only
- H03F3/393—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45273—Mirror types
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/261—Amplifier which being suitable for instrumentation applications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/91—Indexing scheme relating to amplifiers the amplifier has a current mode topology
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45592—Indexing scheme relating to differential amplifiers the IC comprising one or more buffer stages other than emitter or source followers between the input signal leads and input leads of the dif amp, e.g. inverter stages
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
本発明は、増幅器の分野に関し、詳細には電流モード計装用増幅器に関する。
本IAでは、電流モードトポロジを使用している。このIAは、差動電圧Vin=VINP−VINNを受け取る第1および第2の入力端子(VINP、VINN)と、抵抗値R1を有する抵抗と、この差動電圧を受け取り、それぞれVINPおよびVINNと共に変化する各出力ノードにおいて、第1および第2の出力電圧V1およびV2を供給する第1および第2のバッファ増幅器とを含んでいる。図2を参照すると、第1の増幅器は、バイアス電流Ibias1=I3−I1を用いてバイアスされ、V1と回路コモンポイント(circuit common point)との間に接続された第1のトランジスタ(MN1)を含んでおり、第2の増幅器は、バイアス電流Ibias2=I4−I2を用いてバイアスされ、V2と回路コモンポイントとの間に接続された第2のトランジスタ(MN2)を含んでいる。
以上で指摘した式IaおよびIbが正しいためには、MN1またはMN2に印加される入力信号電流が、小信号(small signal)として見えるように、I3はI1よりも大きい必要があり、またI4はI2よりも大きい必要がある。
Claims (10)
- 差動電圧(VINP−VINN)を受け取るように接続された第1および第2の入力端子と、
前記入力端子のうちの各入力端子に結合された各入力ノードと、それぞれVINPおよびVINNと共に変化する第1および第2の出力電圧V1およびV2を供給する各出力ノードとを有し、前記第1の増幅器が、前記第1の出力ノードと回路コモンポイントとの間に結合され、バイアス電流Ibias1でバイアスされる第1のトランジスタ(MN1)を含み、前記第2の増幅器が、前記第2の出力ノードと前記回路コモンポイントとの間に結合され、バイアス電流Ibias2でバイアスされる第2のトランジスタ(MN2)を含む第1および第2のバッファ増幅器と、
前記第1の抵抗素子が、V1−V2と共に変化する電流IR1を伝導させ、前記第1のトランジスタが、VINP>VINNであるときに電流Ia=Ibias1−IR1を、またVINP<VINNであるときに電流Ia=Ibias1+IR1を伝導させ、前記第2のトランジスタが、VINN>VINPであるときに電流Ib=Ibias2−IR1を、またVINN<VINPであるときに電流Ib=Ibias2+IR1を伝導させるように、前記第1の出力ノードに第1の端子で、また前記第2の出力ノードに第2の端子で接続された、抵抗値R1を有する第1の抵抗素子と、
電流出力ノードに結合された電流出力端子に対して、電流入力端子に印加された電流をミラーするように構成された電流ミラーと、
前記電流ミラーの前記電流入力端子に対して電流Iaを結合するように構成された回路と、
前記電流出力ノードに対して電流Ibを結合するように構成された回路と
を備える電流モード計装用増幅器(IA)。 - その入力において前記電流出力ノードに接続され、その出力において前記IAの出力電圧Voutを供給するバッファ増幅器(55)をさらに備える、請求項1に記載の前記IA。
- 前記IAが、G=−2*(R2/R1)によって与えられるゲインGを有するように、前記電流出力ノードと前記回路コモンポイントとの間に結合される、抵抗値R2を有する第2の抵抗素子(54)をさらに備える、請求項2に記載の前記IA。
- VINP−VINNが、所定の値に等しいときにVoutを所望の中心値に設定するために前記第2の抵抗素子と前記回路コモンポイントとの間に直列に接続された基準電圧源をさらに備える、請求項3に記載の前記IA。
- 前記第2の抵抗素子が、
供給電圧と前記電流出力ノードとの間に直列に接続された第1の抵抗と、
前記電流出力ノードと前記回路コモンポイントとの間に直列に接続された第2の抵抗と
を備え、VINP−VINNが所定の値に等しいときに前記第1および第2の抵抗の前記抵抗値が、Voutを所望の中心値に設定するように選択される、請求項3に記載の前記IA。 - 電流Iaを結合するように構成された前記回路が、前記第1のトランジスタと、前記電流ミラーの前記電流入力端子に対して電流Iaをミラーするように接続された第3のトランジスタ(MN3)とを備え、電流Ibを結合するように構成された前記回路が、前記第2のトランジスタと、前記電流出力ノードに電流Ibをミラーするように接続された第4のトランジスタ(MN4)とを備える、請求項1に記載の前記IA。
- 電流Iaを結合するように構成された前記回路が、
前記第1のトランジスタと、
前記第1のトランジスタと前記回路コモンポイントとの間に接続された第1の固定電流源(70)と、
前記固定電流源と前記第1のトランジスタとの前記接続部に接続されたその制御入力と、第2の固定電流源(72)と前記回路コモンポイントとの間に接続されたその電流回路とを有する第3のトランジスタ(MN5)と、
前記第2の固定電流源と前記第3のトランジスタの前記接続部に接続されたその制御入力と、前記電流ミラー入力端子と前記第3のトランジスタの前記制御入力との間に接続されたその電流回路とを有し、前記第3および第4のトランジスタが、前記第3のトランジスタの前記制御入力における前記電圧を安定化させる仮想グランドノードを形成し、前記第4のトランジスタが、電流Iaと共に変化する電流を伝導させるようになっている、第4のトランジスタ(MN6)と
を備える、請求項1に記載の前記IA。 - 前記IAは、第1および第2の位相を有するチョッピングサイクルに従って、動作するようにチョッパにより安定化させられ、
前記IAの第1および第2の入力ノードが、それぞれ前記第1および第2の入力端子に接続され、前記IAの第1および第2の出力ノードが、それぞれ前記第1の抵抗素子の第1および第2の端子に接続され、電流IaおよびIbが、それぞれ前記電流ミラーの前記電流入力および電流出力の端子に結合されるように、前記IAが、前記第1の位相中に構成され、
前記IAの第1および第2の入力ノードが、それぞれ前記第2および第1の入力端子に接続され、前記IAの第1および第2の出力ノードが、それぞれ前記第1の抵抗素子の第1および第2の端子に接続され、電流IaおよびIbが、それぞれ前記電流ミラーの前記電流出力および電流入力の端子に結合されるように、前記IAが、前記第2の位相中に構成される、請求項1に記載の前記IA。 - 前記電流ミラーが、チョップされた電流ミラーである、請求項8に記載の前記IA。
- 前記電流ミラーが、前記IAとは異なる周波数でチョップされる、請求項9に記載の前記IA。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58029504P | 2004-06-15 | 2004-06-15 | |
PCT/US2005/021250 WO2005124997A1 (en) | 2004-06-15 | 2005-06-15 | Current-mode instrumentation amplifier |
Publications (2)
Publication Number | Publication Date |
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JP2008503167A true JP2008503167A (ja) | 2008-01-31 |
JP4523035B2 JP4523035B2 (ja) | 2010-08-11 |
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007516722A Active JP4406030B2 (ja) | 2004-06-15 | 2005-06-15 | 高精度のチョッパ安定化電流ミラー |
JP2007516724A Expired - Fee Related JP4538050B2 (ja) | 2004-06-15 | 2005-06-15 | 電流モード計装用増幅器のゲインエラー補正回路 |
JP2007516723A Expired - Fee Related JP4523035B2 (ja) | 2004-06-15 | 2005-06-15 | 電流モード計装用増幅器 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007516722A Active JP4406030B2 (ja) | 2004-06-15 | 2005-06-15 | 高精度のチョッパ安定化電流ミラー |
JP2007516724A Expired - Fee Related JP4538050B2 (ja) | 2004-06-15 | 2005-06-15 | 電流モード計装用増幅器のゲインエラー補正回路 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7161413B2 (ja) |
EP (3) | EP1756690B1 (ja) |
JP (3) | JP4406030B2 (ja) |
CN (3) | CN100490310C (ja) |
DE (3) | DE602005025760D1 (ja) |
WO (3) | WO2005124998A1 (ja) |
Cited By (1)
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JP2010220195A (ja) * | 2009-03-18 | 2010-09-30 | Honeywell Internatl Inc | カレントコンベアベースの計器増幅器 |
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KR101805557B1 (ko) * | 2010-03-03 | 2017-12-07 | 드비알레 | 전류 리플렉터를 구비한 전류-전압 변환기, 증폭기의 입력단 및 대응하는 증폭기 |
US8847139B2 (en) | 2010-08-24 | 2014-09-30 | Intersil Americas LLC | Methods, sub-systems and systems that reduce a mismatch error associated with an analog circuit |
CN102354241B (zh) * | 2011-07-29 | 2015-04-01 | 开曼群岛威睿电通股份有限公司 | 电压/电流转换电路 |
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CN102681583A (zh) * | 2012-05-28 | 2012-09-19 | 天津大学 | 高精度带隙基准电路 |
US8791758B1 (en) | 2013-03-04 | 2014-07-29 | Analog Devices, Inc. | Apparatus and methods for buffer linearization |
US9444408B2 (en) * | 2013-09-30 | 2016-09-13 | Atmel Corporation | Sense amplifier |
KR101937676B1 (ko) | 2014-01-13 | 2019-01-14 | 삼성전자주식회사 | 생체 신호 증폭 회로 |
CN104935151B (zh) * | 2014-03-19 | 2017-10-31 | 中航(重庆)微电子有限公司 | 交换式电源转换器内建补偿电路*** |
CN105300530B (zh) * | 2015-11-10 | 2018-07-31 | 中国科学院半导体研究所 | 带有读出电路的太赫兹波探测器 |
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US11152901B2 (en) | 2018-09-10 | 2021-10-19 | Analog Devices, Inc. | Amplifier |
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2005
- 2005-06-15 US US11/154,136 patent/US7161413B2/en active Active
- 2005-06-15 EP EP05759175A patent/EP1756690B1/en not_active Expired - Fee Related
- 2005-06-15 CN CNB200580022605XA patent/CN100490310C/zh not_active Expired - Fee Related
- 2005-06-15 JP JP2007516722A patent/JP4406030B2/ja active Active
- 2005-06-15 DE DE602005025760T patent/DE602005025760D1/de active Active
- 2005-06-15 WO PCT/US2005/021251 patent/WO2005124998A1/en active Application Filing
- 2005-06-15 WO PCT/US2005/021249 patent/WO2005124499A1/en active Application Filing
- 2005-06-15 CN CNB2005800269337A patent/CN100508374C/zh not_active Expired - Fee Related
- 2005-06-15 DE DE602005026004T patent/DE602005026004D1/de active Active
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JPS61223661A (ja) * | 1985-03-29 | 1986-10-04 | Clarion Co Ltd | Ac−dc変換回路 |
JPS62113283A (ja) * | 1985-11-12 | 1987-05-25 | Victor Co Of Japan Ltd | 絶対値回路 |
JPH0557924U (ja) * | 1991-12-27 | 1993-07-30 | ミツミ電機株式会社 | 演算増幅回路 |
JPH08222969A (ja) * | 1995-02-14 | 1996-08-30 | Sanyo Electric Co Ltd | 電圧電流変換回路 |
JPH10150332A (ja) * | 1996-11-15 | 1998-06-02 | Nec Corp | 差動回路 |
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JP2010220195A (ja) * | 2009-03-18 | 2010-09-30 | Honeywell Internatl Inc | カレントコンベアベースの計器増幅器 |
Also Published As
Publication number | Publication date |
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CN100476679C (zh) | 2009-04-08 |
CN1993665A (zh) | 2007-07-04 |
CN100490310C (zh) | 2009-05-20 |
EP1756944A1 (en) | 2007-02-28 |
US7167051B2 (en) | 2007-01-23 |
DE602005025760D1 (de) | 2011-02-17 |
US20050275452A1 (en) | 2005-12-15 |
US7193457B2 (en) | 2007-03-20 |
CN100508374C (zh) | 2009-07-01 |
EP1756690A1 (en) | 2007-02-28 |
US20050275453A1 (en) | 2005-12-15 |
WO2005124997A1 (en) | 2005-12-29 |
EP1756944B1 (en) | 2010-09-29 |
DE602005023864D1 (de) | 2010-11-11 |
US7161413B2 (en) | 2007-01-09 |
DE602005026004D1 (de) | 2011-03-03 |
US20050275460A1 (en) | 2005-12-15 |
CN101002382A (zh) | 2007-07-18 |
JP4538050B2 (ja) | 2010-09-08 |
CN1981432A (zh) | 2007-06-13 |
EP1756690B1 (en) | 2011-01-05 |
JP2008503168A (ja) | 2008-01-31 |
EP1756945A1 (en) | 2007-02-28 |
JP4406030B2 (ja) | 2010-01-27 |
JP2008503166A (ja) | 2008-01-31 |
JP4523035B2 (ja) | 2010-08-11 |
WO2005124499A1 (en) | 2005-12-29 |
EP1756945B1 (en) | 2011-01-19 |
WO2005124998A1 (en) | 2005-12-29 |
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