JP2008294388A - ウェハレベルのシステムインパッケージ及びその製造方法 - Google Patents
ウェハレベルのシステムインパッケージ及びその製造方法 Download PDFInfo
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- JP2008294388A JP2008294388A JP2007198748A JP2007198748A JP2008294388A JP 2008294388 A JP2008294388 A JP 2008294388A JP 2007198748 A JP2007198748 A JP 2007198748A JP 2007198748 A JP2007198748 A JP 2007198748A JP 2008294388 A JP2008294388 A JP 2008294388A
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- substrate
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- heat
- interlayer insulating
- electronic device
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Abstract
【解決手段】ウェハを単位システム別に切断した基板と、該基板の上面に熱放出プレートを媒介して実装する一つ以上の第1電子素子と、上記基板の上面に順次に形成する複数の層間絶縁膜と、上記基板の層間絶縁膜の間または内部に埋設する一つ以上の第2電子素子を含むシステムインパッケージを提供する。上記基板の下面には、ヒートシンクを追加して付着することができ、その場合、上記基板上面の熱放出プレートと上記ヒートシンクを連結するヒートパイプからなる熱伝導パスを形成する。ウェハレベルで各種素子を埋設することで、微細ピッチに対応してより集積された半導体装置を具現することができる。また、多段階熱放出構造によって高速動作及び高発熱素子の熱放出を最大化し、素子の動作もさらに安定化することができる。
【選択図】図22
Description
120…垂直導電層
210…(高発熱性)電子素子
230…薄膜型受動素子
310…熱放出プレート
320…ヒートパイプ
330…ヒートシンク
Claims (25)
- ウェハを単位システム別に切断した基板と、
該基板の上面に熱放出プレートを媒介して実装する一つ以上の第1電子素子と、
前記基板の上面に順次に形成する複数の層間絶縁膜と、
前記基板の層間絶縁膜の間または内部に埋設する一つ以上の第2電子素子を含む、ことを特徴とするシステムインパッケージ。 - 前記基板の下面にはヒートシンクが付着する、請求項1に記載のシステムインパッケージ。
- 前記基板の上面の熱放出プレートと前記ヒートシンクを連結するヒートパイプが、基板を貫いて形成する、ことを特徴とする請求項2に記載のシステムインパッケージ。
- 前記第1電子素子が、CPU、MCU、AP、BBPなどの高速動作及び高発熱素子である、ことを特徴とする請求項1に記載のシステムインパッケージ。
- 前記層間絶縁膜の間または内部に内蔵する受動素子をさらに含む、ことを特徴とする請求項1に記載のシステムインパッケージ。
- 前記受動素子が、集積型受動素子または薄膜型受動素子である、ことを特徴とする請求項5に記載のシステムインパッケージ。
- 前記第1電子素子及び第2電子素子の中で少なくとも一つと電気的に連結する再配置導電層を含む、ことを特徴とする請求項1に記載のシステムインパッケージ。
- 前記基板の上部に前記第1電子素子及び第2電子素子と電気的に連結するソルダバンプを含む、ことを特徴とする請求項1に記載のシステムインパッケージ。
- 前記層間絶縁膜を貫いて第1電子素子または第2電子素子とソルダバンプを電気的に連結する垂直導電層を形成する、ことを特徴とする請求項8に記載のシステムインパッケージ。
- 前記ソルダバンプの下部に、1層以上の下部金属層を形成する、ことを特徴とする請求項8に記載のシステムインパッケージ。
- 前記第1電子素子が、熱放出プレートとダイ接着フイルム(die attach film)を媒介して接触する、ことを特徴とする請求項1に記載のシステムインパッケージ。
- 前記第1電子素子または第2電子素子が、上面が上向き配置または下向き配置(face up/down)方式で実装する、ことを特徴とする請求項1に記載のシステムインパッケージ。
- 前記基板が、Si、Al2O3、ガラス、金属材質の基板である、ことを特徴とする請求項1に記載のシステムインパッケージ。
- ウェハを単位システム別に切断した基板と、
該基板の上面に熱放出プレートを媒介して実装する一つ以上の第1電子素子と、
前記基板の上面に順次に形成する複数の層間絶縁膜と、
前記基板の層間絶縁膜の間または内部に埋設する一つ以上の第2電子素子と、
前記第2電子素子と前記熱放出プレートを連結する熱伝導パスとを含む、ことを特徴とするシステムインパッケージ。 - 前記熱伝導パスが、前記層間絶縁膜を垂直に貫くホールに熱伝導性物質を充填し、前記第2電子素子と熱放出プレートを連結する、ことを特徴とする請求項14に記載のシステムインパッケージ。
- ウェハレベルの基板に厚さ方向にホールを形成し、該ホールに熱伝導性物質を充填してヒートパイプを形成し、
前記基板の上面に熱放出プレートを配置し、
前記熱放出プレートの上部に第1電子素子を実装し、
前記基板の上部に複数の層間絶縁膜を形成し、
前記層間絶縁膜の間または内部に第2電子素子を埋設し、
前記基板の下面を研削してヒートパイプを露出させ、
前記基板の上部にソルダバンプを形成し、
前記基板の下面にヒートシンクを付着する工程を含む、ことを特徴とするシステムインパッケージ製造方法。 - 前記層間絶縁膜の間または内部に受動素子を埋設する工程をさらに含む、ことを特徴とする請求項16に記載のシステムインパッケージ製造方法。
- 前記第1電子素子または第2電子素子と電気的に連結するように、前記層間絶縁膜を貫く垂直導電層を形成する工程をさらに含む、ことを特徴とする請求項16に記載のシステムインパッケージ製造方法。
- 前記第1電子素子または第2電子素子と電気的に連結する再配置導電層を形成する工程をさらに含む、ことを特徴とする請求項16に記載のシステムインパッケージ製造方法。
- 前記基板をシステム単位で切断する工程をさらに含む、ことを特徴とする請求項16に記載のシステムインパッケージ製造方法。
- 前記基板に複数のホールを形成して該ホールに導電性物質を充填する工程を含む、ことを特徴とする請求項16に記載のシステムインパッケージ製造方法。
- 前記第2電子素子の一部分と前記熱放出プレートを連結する熱伝導パスを形成する工程をさらに含む、ことを特徴とする請求項21に記載のシステムインパッケージ製造方法。
- ウェハレベルの基板に熱放出プレートを配置し、
該熱放出プレートの上部に第1電子素子を実装し、
前記基板の上部に複数の層間絶縁膜を形成し、
前記層間絶縁膜の間または内部に第2電子素子を埋設し、
前記基板の上部にソルダバンプを形成し、
前記基板を除去し、
前記熱放出プレートの下面にヒートシンクを付着する工程を含む、ことを特徴とするシステムインパッケージ製造方法。 - 前記基板が、硬質ベース基板に柔軟性フイルムを形成する複合構造である、ことを特徴とする請求項23に記載のシステムインパッケージ製造方法。
- 前記柔軟性フイルムが、離型性を有する薄型フイルムまたは液状で塗布した離型剤である、ことを特徴とする請求項24に記載のシステムインパッケージ製造方法。
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