JP2008294168A - レジスト除去方法及びその装置 - Google Patents
レジスト除去方法及びその装置 Download PDFInfo
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- JP2008294168A JP2008294168A JP2007137288A JP2007137288A JP2008294168A JP 2008294168 A JP2008294168 A JP 2008294168A JP 2007137288 A JP2007137288 A JP 2007137288A JP 2007137288 A JP2007137288 A JP 2007137288A JP 2008294168 A JP2008294168 A JP 2008294168A
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- 238000000034 method Methods 0.000 title claims description 28
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 5
- 239000012498 ultrapure water Substances 0.000 claims abstract description 5
- 230000008016 vaporization Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 description 69
- 238000004380 ashing Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- 239000005977 Ethylene Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001819 mass spectrum Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 150000001345 alkine derivatives Chemical class 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical class [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000005949 ozonolysis reaction Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】基板16(例えば高ドーズイオン注入レジストを有するもの)を格納するチャンバ2を備え、このチャンバ2には大気圧よりも低圧のもとでオゾンガスと不飽和炭化水素ガスと水蒸気とが供給する。前記オゾンガスとしてはオゾン含有ガスを蒸気圧の差に基づいてオゾンのみを液化分離した後に再び気化して得られる超高濃度オゾンガスが挙げられる。前記処理した基板16には洗浄するために超純水を供給するとよい。チャンバ2は基板16を保持するサセプタ15を備える。サセプタ15はその温度が100℃以下となるように加熱される。前記サセプタを加熱する手段としては例えば赤外光を発する光源4が挙げられる。
【選択図】図1
Description
2…チャンバ、5,6,7,9…配管、13…光導入窓
3…真空ポンプ、10…バルブ、11…オゾンキラー
4…光源、12…反射板
8…オゾン発生装置
15…サセプタ、17…熱伝導ブロック、18…熱電対
16…基板
Claims (8)
- 大気圧よりも低圧のもとでオゾンガスと不飽和炭化水素ガスと水蒸気とを基板に供給して前記基板上のレジストを除去することを特徴とするレジスト除去方法。
- 前記オゾンガスは、オゾン含有ガスを蒸気圧の差に基づいてオゾンのみを液化分離した後に再び気化して得られる超高濃度オゾンガスであることを特徴とする請求項1に記載のレジスト除去方法。
- イオン注入レジストを有する基板に大気圧よりも低圧のもとでオゾンガスと不飽和炭化水素ガスと水蒸気とを供給した後に前記基板を超純水で洗浄することを特徴とする請求項1または2に記載のレジスト除去方法。
- 前記基板をサセプタで保持し、このサセプタの温度が100℃以下となるように前記サセプタを加熱することを特徴とする請求項1から3のいずれか1項に記載のレジスト除去方法。
- 基板を格納するチャンバを備え、このチャンバには大気圧よりも低圧のもとでオゾンガスと不飽和炭化水素ガスと水蒸気とが供給されることを特徴とするレジスト除去装置。
- 前記オゾンガスの供給は、オゾン含有ガスを蒸気圧の差に基づいてオゾンのみを液化分離した後に再び気化することで超高濃度オゾンガスを発生するオゾン発生装置により行うことを特徴とする請求項5に記載のレジスト除去装置。
- 前記チャンバは前記基板を保持するサセプタを備え、前記サセプタはその温度が100℃以下となるように加熱されることを特徴とする請求項5または6に記載のレジスト除去装置。
- 前記サセプタを加熱する手段は赤外光を発する光源であることを特徴とする請求項7に記載のレジスト除去装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007137288A JP4952375B2 (ja) | 2007-05-23 | 2007-05-23 | レジスト除去方法及びその装置 |
PCT/JP2008/058577 WO2008143017A1 (ja) | 2007-05-23 | 2008-05-08 | レジスト除去方法及びその装置 |
CN2008800170471A CN101715601B (zh) | 2007-05-23 | 2008-05-08 | 去除抗蚀剂的方法和装置 |
US12/598,501 US8187389B2 (en) | 2007-05-23 | 2008-05-08 | Method of removing resist and apparatus therefor |
KR1020097023735A KR101160258B1 (ko) | 2007-05-23 | 2008-05-08 | 레지스트 제거방법과 그를 위한 장치 |
TW097118796A TW200913007A (en) | 2007-05-23 | 2008-05-21 | Method and apparatus for removing resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007137288A JP4952375B2 (ja) | 2007-05-23 | 2007-05-23 | レジスト除去方法及びその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008294168A true JP2008294168A (ja) | 2008-12-04 |
JP4952375B2 JP4952375B2 (ja) | 2012-06-13 |
Family
ID=40031729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007137288A Active JP4952375B2 (ja) | 2007-05-23 | 2007-05-23 | レジスト除去方法及びその装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8187389B2 (ja) |
JP (1) | JP4952375B2 (ja) |
KR (1) | KR101160258B1 (ja) |
CN (1) | CN101715601B (ja) |
TW (1) | TW200913007A (ja) |
WO (1) | WO2008143017A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009157355A (ja) * | 2007-12-04 | 2009-07-16 | Meidensha Corp | レジスト除去方法及びその装置 |
JP2011086886A (ja) * | 2009-10-19 | 2011-04-28 | Fujitsu Semiconductor Ltd | 炭素汚染除去処理方法及び炭素汚染除去処理装置 |
JP2012146712A (ja) * | 2011-01-07 | 2012-08-02 | Renesas Electronics Corp | クリーニング方法およびクリーニング装置 |
JP2012243852A (ja) * | 2011-05-17 | 2012-12-10 | Renesas Electronics Corp | 露光装置、露光方法、半導体装置の製造方法、検査装置、検査方法及びクリーニング方法 |
US10053548B2 (en) | 2015-05-21 | 2018-08-21 | Meidensha Corporation | Method and device for modifying resin |
KR20180128382A (ko) * | 2018-11-26 | 2018-12-03 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
US10253148B2 (en) | 2015-03-12 | 2019-04-09 | Meidensha Corporation | Method and device for modifying resin |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2010488C2 (en) | 2012-03-20 | 2014-10-21 | Mapper Lithography Ip Bv | Arrangement and method for transporting radicals. |
US9522844B2 (en) * | 2014-09-03 | 2016-12-20 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Low temperature poly-silicon thin film preparation apparatus and method for preparing the same |
DE102015209529A1 (de) * | 2015-05-22 | 2016-11-24 | BSH Hausgeräte GmbH | Haushaltsgerät |
US9981293B2 (en) | 2016-04-21 | 2018-05-29 | Mapper Lithography Ip B.V. | Method and system for the removal and/or avoidance of contamination in charged particle beam systems |
JP6985803B2 (ja) * | 2017-03-01 | 2021-12-22 | 株式会社Screenホールディングス | 露光装置、基板処理装置、基板の露光方法および基板処理方法 |
JP7092478B2 (ja) * | 2017-09-15 | 2022-06-28 | 株式会社Screenホールディングス | レジスト除去方法およびレジスト除去装置 |
KR102099433B1 (ko) | 2018-08-29 | 2020-04-10 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
CN111333034A (zh) * | 2020-03-06 | 2020-06-26 | 费勉仪器科技(上海)有限公司 | 一种液化型超高纯臭氧制备装置 |
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Publication number | Publication date |
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JP4952375B2 (ja) | 2012-06-13 |
CN101715601A (zh) | 2010-05-26 |
CN101715601B (zh) | 2013-06-12 |
US8187389B2 (en) | 2012-05-29 |
KR20100002280A (ko) | 2010-01-06 |
WO2008143017A1 (ja) | 2008-11-27 |
KR101160258B1 (ko) | 2012-06-26 |
US20100139708A1 (en) | 2010-06-10 |
TWI369720B (ja) | 2012-08-01 |
TW200913007A (en) | 2009-03-16 |
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