CN102061228B - 包含氧化剂和有机溶剂的微电子清洁组合物 - Google Patents

包含氧化剂和有机溶剂的微电子清洁组合物 Download PDF

Info

Publication number
CN102061228B
CN102061228B CN2011100064160A CN201110006416A CN102061228B CN 102061228 B CN102061228 B CN 102061228B CN 2011100064160 A CN2011100064160 A CN 2011100064160A CN 201110006416 A CN201110006416 A CN 201110006416A CN 102061228 B CN102061228 B CN 102061228B
Authority
CN
China
Prior art keywords
cleaning compositions
weight
cleaning
water
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2011100064160A
Other languages
English (en)
Other versions
CN102061228A (zh
Inventor
许建斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avantor Performance Materials LLC
Original Assignee
Anwantuo Spcial Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anwantuo Spcial Materials Co Ltd filed Critical Anwantuo Spcial Materials Co Ltd
Publication of CN102061228A publication Critical patent/CN102061228A/zh
Application granted granted Critical
Publication of CN102061228B publication Critical patent/CN102061228B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3454—Organic compounds containing sulfur containing sulfone groups, e.g. vinyl sulfones
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

适用于清洁具有二氧化硅、低κ或高κ电介质和铜或铝金属化的微电子结构的清洁组合物包含氧化剂和选自酰胺、砜、环丁烯砜、硒代砜和饱和醇的极性有机溶剂，及任选的其它组分。

Description

包含氧化剂和有机溶剂的微电子清洁组合物
此案是申请日为2003年5月27日、中国申请号为03813035.1(国际申请号为PCT/US03/16828)、发明名称为“包含氧化剂和有机溶剂的微电子清洁组合物”的分案申请。
技术领域
本发明涉及用于清洁微电子基底的方法和清洁组合物，以及具体涉及对以二氧化硅、敏感的低κ或高κ电介质和铜金属化(copper metallization)为特征的微电子基底以及Al或Al(Cu)金属化的基底有用并具有改进相容性的清洁组合物。本发明也涉及该清洁组合物用于剥离光致抗蚀剂(photoresist)、清洁来自等离子过程生成的有机化合物、有机金属化合物和无机化合物的残留物、清洁从如化学机械抛光的平整过程(planarization process)中产生的残留物，以及在平整浆料残留物中用作添加剂的用途。
背景技术
在微电子领域中，已经建议使用许多光致抗蚀剂剥离剂和残留物去除剂作为生产线下游或后端(back end)的清洁剂。在制造过程中光致抗蚀剂薄膜沉积在晶片基底上，然后在薄膜上成像电路图案。烘焙后，未聚合的抗蚀剂用光致抗蚀剂展开剂(developer)除去。然后通过反应性等离子体蚀刻气体或化学蚀刻剂溶液将所得到的图像转印至底层材料，该材料通常是电介质或金属。蚀刻气体或化学蚀刻剂溶液选择性蚀刻基底上未被光致抗蚀剂保护的区域。
另外，在蚀刻步骤终止后，抗蚀剂掩膜(mask)必须从晶片的保护区除去，从而可以进行最终的抛光操作。这可以在等离子体灰化步骤中通过采用合适的等离子体灰化(ashing)气体或湿法化学剥离剂完成。然而，寻找用于除去该抗蚀剂掩膜材料而对金属电路没有如腐蚀、溶解或钝化等负面影响的合适清洁组合物，已证实是有问题的。
随着微电子制造集成水平的提高以及图案化微电子器件尺寸的减小，在本领域中使用铜金属化、低κ和高κ电介质变得越来越普遍。这些材料对寻找可接受的清洁剂组合物提出了另外的挑战。先前开发的用于“传统”或“常规”半导体器件(含有Al/SiO2或Al(Cu)SiO2结构)的许多工艺技术组合物不能用于铜金属化的低κ或高κ电介质结构。例如，羟胺类剥离剂或残留物除去剂组合物成功地用于清洁由铝金属化的器件，但对那些由铜金属化的器件实际上不合适。同样，如果不在组合物中作出重大调整，许多铜金属化的/低κ剥离剂不适合铝金属化的器件。
已经证实在等离子蚀刻和/或灰化过程后这些蚀刻和/或灰化残留物的去除是有问题的，特别对具有低κ电介质材料的基底和由铜金属化的那些基底。无法完全除去或抵消这些残留物会导致湿气的吸收和对金属结构引起腐蚀的不希望物质的形成。电路材料被这些不希望的物质腐蚀，并在电路线路(circuitry wiring)中产生不连续性以及不希望地增加电阻。
迄今为止，氧化剂使用在主要为水溶液形式的清洁组合物中。已知氧化剂如普通使用的过氧化氢和过酸容易发生反应或易于分解，特别是在有机溶剂基质(通常应用在剥离剂组合物中)中。在这些例子中，氧化剂被消耗，对所期望的应用变得无法得到。另外，含有氧化剂的微电子清洁组合物经常显示出差的产品稳定性，特别在存在大量的(10重量％或更多的)有机溶剂，以及在较高的pH范围内和高的处理温度下。而且，在许多组合物中，稳定剂和溶剂的使用经常会妨碍氧化剂，导致在清洁过程中进行有效氧化/还原反应的能力降低。
发明内容
因此，需要适合后端清洁操作的微电子清洁组合物，其中该组合物是有效的清洁剂，且能用于剥离光致抗蚀剂和清洁来自等离子过程生成的有机化合物、有机金属化合物和无机化合物的残留物，清洁如CMP的平整过程产生的残留物，和在平整浆料/液中用作添加剂，以及该组合物可用于采用铜金属化，和多孔或无孔低κ(即κ值为3或更小)或高κ(即κ值为20或更大)的电介质的高级互连材料(advanced interconnect materials)，以及适用于清洁常规器件，例如那些含有二氧化硅、低κ或高κ电介质的铝或铝(同)金属化的器件。本发明涉及包含氧化剂的清洁组合物，该组合物是用于清洁所有这些器件的有效清洁剂。
已经发现以下配制剂能提供普遍可接受的清洁组合物，该配制剂包含氧化剂和与氧化剂发生最小程度的反应或不发生反应的某些极性有机溶剂，以及特别是能帮助稳定该氧化剂的那些溶剂。还已发现具有良好氢键键合能力的溶剂可提供包含这些氧化剂的配制剂。本发明的清洁组合物通常具有大约0.1-30wt％氧化剂和大约1-99.9wt％具有良好氢键键合能力的极性有机溶剂。本发明的清洁组合物也可任选包含水和/或相容的酸或碱(alkaline base)、螯合剂、共溶剂、氧化剂稳定剂、金属腐蚀抑制剂抑制剂(metal corrosion inhibitor)、表面活性剂和氟化物。尽管在本发明的清洁组合物中碱是任选的组分，但优选存在碱，这是因为尽管不是必需的，但清洁组合物具有碱性pH是优选的。碱存在的量为0至大约30重量％，优选存在的量为大约0.1-10重量％。在本说明书中提供的重量百分数基于清洁组合物的总重量。
具体实施方式
本发明的新型后端清洁组合物将包含一种或多种任意的氧化剂和极性有机溶剂。该清洁组合物可配制为高含水性、半含水性或有机溶剂类的配制剂。清洁组合物可以只和其它溶剂单独使用，或与酸和碱结合使用。本发明的清洁组合物可用于大范围的pH和温度的加工/操作条件，及可用于有效除去光致抗蚀剂、后等离子体(post plasma)蚀刻/灰化残留物、牺牲(sacrificial)光吸收材料和防反射涂层(ARC)。另外，发现用本发明的清洁组合物容易清洁难以清洁的样品，例如高度交联或硬化的光致抗蚀剂和含有含钛物质(如钛、氧化钛和氮化钛)或含钽物质(如钽、氧化钽和氮化钽)的结构。
本发明的组合物可以含有适合用于微电子清洁组合物的任何氧化剂。这些氧化剂的例子，可提及例如，过氧化物，特别是过氧化氢，来自过氧化氢和含氧酸、乙酸氧锆和偶氮化合物的过氧水合物(peroxyhydrates)的分子加合物，例如过碳酸钠、高硼酸钠，以及高碘酸盐(IO4 -)、高硼酸盐、高锰酸盐(MnO4 -)、过硫酸氢盐(hydrogen persulfates)、过硫酸盐和烷氧基卤化物如t-BuOCl。也可以采用从H2O2和有机分子的取代反应得到的其它过氧化合物，但较不优选。实例包括烷基过氧化物、过氧酸、二酰基过氧化物和酮过氧化物。也可以采用H2O2和无机分子的相似取代产物如过氧硫酸。在本发明的清洁组合物中使用的氧化剂的量为大约0.1-30重量％，优选为大约0.1-5重量％，更优选为大约1-5重量％。优选的氧化剂是过氧化氢(H2O2)，优选采用3-30％的水溶液。
所述有机溶剂是具有氢键键合能力以及与氧化剂发生最小程度的反应或不发生反应的极性有机溶剂。该有机溶剂包括酰胺、砜、环丁烯砜(sulfolene)、硒代砜(selenone)和饱和醇。在优选的溶剂中，可提及环丁砜(四氢噻吩-1，1-二氧化物)、3-甲基环丁砜、正丙基砜、正丁基砜；环丁烯砜(2，5-二氢噻吩-1，1-二氧化物)、3-甲基环丁烯砜；酰胺如1-(2-羟乙基)-2-吡咯烷酮(HEP)、二甲基哌啶酮(DMPD)、N-甲基吡咯烷酮(NMP)、二甲基乙酰胺(DMAc)、二甲基甲酰胺；和饱和醇如乙醇、丙醇、丁醇、己醇、乙二醇、丙二醇、丙三醇和六氟异丙醇。有机溶剂组分可以包括一种或多种该溶剂，并且在组合物中存在的量通常为大约1-99.9重量％，优选为大约10-90重量％，最优选为大约30-80重量％。这些溶剂对酸性和碱性条件具有抵抗力并且不会和氧化剂结合得太牢固。另外，通过相互作用如氢键键合形成稳定的络合物它们能够稳定氧化剂，如过氧化氢。
水可存在于清洁组合物中，并且水存在时，存在的量为大约0.1-98重量％，优选为大约10-60重量％，最优选为大约15-50重量％。水可作为其它组分的水性部分和/或作为另外添加的水而存在。
碱是作为本发明清洁组合物的任选但通常是优选的组分而存在的。碱存在的量可以为0至大约30重量％，优选为大约0.1-10重量％，最优选为大约0.1-5重量％。在清洁组合物中可以使用任何合适的碱。该碱优选为氢氧化铵或氨或非氨衍生碱(non-ammonia derived base)。正如下文公开的，当组合物是打算用来清洁铜金属化结构时，碱优选为非氨衍生碱，而当组合物是打算用来清洁含铝结构时，该碱优选为氢氧化铵、氨或与腐蚀抑制共溶剂(corrosion-inhibiting co-solvent)和/或腐蚀抑制剂(corrosion-inhibiting agent)结合的非氨衍生碱。作为合适的非氨衍生碱的例子，可提及氢氧化四烷基铵，例如分子式为R4N+OH-的那些，其中每个R独立为取代的或未取代的烷基，该烷基优选具有1-22个碳原子，且更优选具有1-4个碳原子。在适用于组合物的非氨衍生碱中，可提及例如，氢氧化四甲基铵、氢氧化四丁基铵、胆碱氢氧化物(choline hydroxide)等。无机碱如氢氧化钾、氢氧化钠等也可以用作所述碱。
如前面提到的，本发明的清洁组合物也可以在酸性pH条件下应用，并且可以使用必需量的任何合适的酸组分(例如HCI或HF)以足够给予组合物酸性pH。
清洁组合物也可以任选包括一种或多种腐蚀抑制共溶剂。在本发明的组合物中使用的优选腐蚀抑制共溶剂具有下述通式：
W-[CR1R2]n-Y
其中R1和R2各自独立选自H、烷基，优选具有1-6个碳原子的烷基、芳基，优选具有3-14个碳原子的芳基、OR3和SO2R4；n为2-6的数，优选2或3；W和Y各自独立选自OR3和SO2R4；及R3和R4各自独立选自H、烷基，优选具有1-6个碳原子的烷基、芳基，优选具有3-14个碳原子的芳基。作为该腐蚀抑制共溶剂的例子，可提及例如，乙二醇、丙二醇和丙三醇等。如果清洁组合物所要求的极性有机溶剂不是上述通式内的饱和醇，则此饱和醇可作为共溶剂存在。组合物中存在的共溶剂的量为0至大约80重量％，优选为大约1-50重量％，最优选为大约1-30重量％。
本发明的组合物也可以包含其它腐蚀抑制剂，优选为包含与芳香环直接键合的两个或多个OH、OR6和/或SO2R6R7基团的芳基化合物，其中R6、R7和R8各自独立为烷基，优选具有1-6个碳原子的烷基，或芳基，优选具有6-14个碳原子的芳基。这些优选的腐蚀抑制剂的例子，可提及邻苯二酚、焦酚、没食子酸、间苯二酚等。其它腐蚀抑制剂存在的量为0至大约15重量％，优选为大约0.1-10重量％，最优选为大约0.5-5重量％。
有机或无机螯合剂或者金属络合剂不是必需的，但它们能提供实质的益处，例如提高的产品稳定性。合适的螯合剂或络合剂的例子包括但不限于反-1，2-环己烷二胺四乙酸(CyDTA)、乙二胺四乙酸(EDTA)、锡酸盐、焦膦酸盐、亚烷基-二膦酸衍生物(如乙烷-1-羟基-1，1-二膦酸盐)、包含乙二胺、二亚乙基三胺或三亚乙基四胺官能部分的膦酸盐[如乙二胺四(亚甲基膦酸)(EDTMP)、二亚乙基三胺五(亚甲基膦酸)、三亚乙基四胺六(亚甲基膦酸)]。组合物中螯合剂的量为0至大约5重量％，优选为大约0.1-2重量％。各种膦酸盐的金属螯合剂或络合剂如乙二胺四(亚甲基膦酸)(EDTMP)对在酸性或碱性条件下含氧化剂的本发明清洁组合物提供了更加改进的稳定性，因而通常是优选的。
需要时，用于氧化剂的其它稳定剂也可以用在本发明的清洁组合物中。这些稳定剂可以使用的量是0至大约10重量％，优选大约0.1-5重量％。这些稳定剂的例子包括但不限于，N-乙酰苯胺和硅酸酯，优选为不含金属离子的硅酸酯如硅酸四烷基铵(包括羟烷基和烷氧烷基)，其中烷基优选包含1-4个碳原子。在这些硅酸酯中有原硅酸四乙酯、四(2-羟乙基)原硅酸酯等。
任选的：可以使用其它金属腐蚀抑制剂，如苯并***，其含量为0至大约5重量％，优选为大约0.1-2重量％。
清洁组合物也可以任选包含表面活性剂，例如二甲基己炔醇(Surfynol-61)、乙氧化四甲基癸炔二醇(Surfynol-465)、聚四氟亚乙基十六烷氧基丙基甜菜碱(Zonyl FSK)，Zonyl FSH等。表面活性剂存在的量通常为0至大约5重量％，优选大约0.1-3重量％。
清洁组合物也可以在清洁组合物中任选包含氟化物，例如，氟化四甲基铵、氟化四丁基铵和氟化铵。其它合适的氟化物包括，例如氟硼酸盐、氟硼酸四丁基铵、六氟化铝、氟化锑等。氟化物组分存在的量为0至大约10重量％，优选为大约0.1-5重量％。
在下表1-9中列出了本发明的清洁组合物的例子。
在下表中所用的缩写词如下。
HEP＝1-(2-羟乙基)-2-吡咯烷酮
TMAH＝氢氧化四甲基铵
TMAF＝氟化四甲基铵
ACA＝N-乙酰苯胺
CyDTA＝反-1，2-环己烷二胺四乙酸
TEOS＝原硅酸四乙酯
DMPD＝二甲基哌啶酮
SFL＝环丁砜
TMAS＝硅酸四甲基胺
EG＝乙二醇
CAT＝邻苯二酚
EHDP＝乙烷-1-羟基-1，1-二膦酸盐
EDTMP＝乙二胺四(亚甲基膦酸)
1N HCI＝1当量浓度盐酸
NH4OH＝氢氧化铵
CH＝胆碱氢氧化物
水＝来自组分水溶液的水之外加入的水
在下表中，组合物XM-188、XM-188A和XM-191也指下列组合物，其中括号内表示的是列出组分的重量份数。
XM-188＝SFL(300)，水(75)，25％TMAH(25)，CyDTA(2.3)
XM-188A＝SFL(150)，水(60)，25％TMAH(17.5)，EDTMP(1.8)
XM-191＝SFL(150)，水(60)，25％TMAH(17.5)，EDTMP(1.8)，EG(30)
表1
组合物/重量份数
  组分   A   B   C   D   E   F   G
  HEP   30   30   30   30   60
  25％TMAH   2   2.6   2   2   2   5   5
  ACA   0.2   0.2
  CyDTA   0.2   0.4   0.4
  TEOS   1
  DMPD   30   60
  SFL
  EG
  CAT
  60％EHDP
  EDTMP
  TMAF
  10％TMAS
  29％NH4OH
  30％H2O2   2.5   2.5   2.5   2.5   2.5   5   5
  水   15   15   15   15   15   30   30
  XM-188
  XM-188A
  XM-191
  1N HCI
  20％CH
表2
组合物/重量份数
  组分   H   I   J   K   L   M   N
  HEP   30
  25％TMAH   1   10   8.8   4   3   4.9
  ACA
  CyDTA   0.92   0.35   0.24
  TEOS
  DMPD
  SFL   120   50   30   37
  EG   10
  CAT
  60％EHDP   0.24   0.29
  EDTMP
  TMAF
  10％TMAS   1
  29％NH4OH
  30％H2O2   2   10   8.8   2.5   4.2   2.5   4
  水   15   60   9
  XM-188   40   40
  XM-188A
  XM-191
  1N HCI
  20％CH
表3
组合物/重量份数
  组分   O   P   Q   R   S   T   U
  HEP
  25％TMAH   5   20   4.4   7.8
  ACA
  CyDTA
  TEOS
  DMPD
  SFL   200   37.5   42.5
  EG   10.3   15
  CAT
  60％EHDP   1.5   2.6
  EDTMP   0.68
  TMAF   2
  10％TMAS
  29％NH4OH
  30％H2O2   19.2   18.7   4.8   5   4.3   5
  水   20   70   22.5   10.6   3.5
  XM-188   200   40
  XM-188A   57.4   40
  XM-191
  1N HCI
  20％CH
表4
组合物/重量份数
  组分   V   W   X   Y   Z   AA   BB
  HEP
  25％TMAH
  ACA
  CyDTA   0.39   0.39
  TEOS
  DMPD
  SFL   50   50   50   50   40
  EG   15   15
  CAT   3   3.5   3.5   1.5
  60％EHDP
  EDTMP   0.6   0.6   0.6
  TMAF
  10％TMAS
  29％NH4OH   1.4   1.9   1.4   1.9   2
  30％H2O2   6.4   5.8   5.5   7.2   6.7   6.7   7.6
  水   12.5   20   12.5   20   30
  XM-188   40   40
  XM-188A
  XM-191
  1N HCI
  20％CH
表5
组合物/重量份数
  组分   CC   DD   EE   FF   GG   HH   II
  HEP
  25％TMAH   2
  ACA
  CyDTA   0.39
  TEOS
  DMPD
  SFL   50   50   60   60
  EG   50
  CAT
  60％EHDP
  EDTMP   0.6
  TMAF
  10％TMAS
  29％NH4OH   1.7   2.2
  30％H2O2   7   7.3   5   5   5   6.2   2.5
  水   12.5   20
  XM-188   40
  XM-188A   57
  XM-191
  1N HCI   1
  20％CH
表6
组合物/重量份数
  组分   JJ   KK   LL   MM   NN   OO
  HEP
  25％TMAH   5   5   6   5   6
  ACA
  CyDTA
  TEOS
  DMPD
  SFL
  EG
  CAT
  60％EHDP
  EDTMP
  TMAF
  10％TMAS
  29％NH4OH
  30％H2O2   7   7.5   6   2.5   7   6
  水   5
  XM-188   80   40   80
  XM-188A
  XM-191   62.5   64.5   62.5
  1N HCI   1
  20％CH
表7
组合物/重量份数
  组分   PP   QQ   RR   SS   TT   UU   W
  HEP
  25％TMAH   25   25   20   25   17.5   17.5   2.5
  ACA
  CyDTA   3   3   2.5   1.5   0.23
  TEOS
  DMPD
  SFL   300   300   300   300   150   150   30
  EG   5   40   20   15
  CAT   3
  60％EHDP
  EDTMP   1.8   1.8
  TMAF
  10％TMAS
  29％NH4OH
  30％H2O2   36.8   37.3   36.7   37.2   26   24   5.8
  水   35   45   45   45   50   50   7.5
  XM-188
  XM-188A
  XM-191
  1N HCI
  20％CH
表8
组合物/重量份数
  组分   WW   XX   YY   ZZ   AAA   BBB   CCC
  HEP
  25％TMAH   3.1   7.5
  ACA
  CyDTA   0.39   0.39   0.28   1.2   0.8
  TEOS
  DMPD   7.5
  SFL   50   50   50   50   74   75
  EG
  CAT   3.5   3.5
  60％EHDP
  EDTMP   0.6   0.6
  TMAF
  10％TMAS
  29％NH4OH   1.4   1.9   1.4   1.9
  30％H2O2   6.8   7.6   6.4   7.25   14.7   13.6   14
  水   12.5   20   12.5   20   40   25   25
  XM-188
  XM-188A
  XM-191
  1N HCI
  20％CH   12
表9
组合物/重量份数
  组分   DDD   EEE
  HEP   75
  25％TMAH   6.25   7.5
  ACA
  CyDTA   0.6   1.2
  TEOS
  DMPD
  SFL
  EG   75
  CAT
  60％EHDP
  EDTMP
  TMAF
  10％TMAS
  29％NH4OH
  30％H2O2   13.4   13.6
  水   25   25
  XM-188
  XM-188A
  XM-191
  1N HCI
通过下表10中的蚀刻速率数据说明本发明清洁组合物对铜和铝的蚀刻速率。使用下述测试程序确定蚀刻速率。
采用大约13×50mm的铝箔或铜箔的薄片。测量箔片厚度。在用2-丙醇、蒸馏水和丙酮清洁箔片后，将箔片放入干燥箱干燥。然后将清洁和干燥过的箔片放入盖子松开的瓶中，瓶中有预热过的本发明清洁组合物，并将其置于指定温度的真空箱中2到4个小时。在进行处理和从箱和瓶中取出后，用大量的蒸馏水冲洗清洁过的箔片，并放入干燥箱中干燥大约1小时，然后使其冷却至室温，再根据重量损失或重量变化来确定蚀刻速率。
表10
Figure BDA0000043666530000161
通过下面的测试程序评估本发明的组合物JJ和NN(表6)对各种电介质的层间电介质(ILD)蚀刻速率。
采用Rudolph干涉仪测量晶片的膜厚度。在指定温度下将晶片(硅晶片上沉积有ILD材料)浸入指定的清洁组合物中30分钟，接着用去离子水冲洗并在氮气流动/气流下干燥。然后在处理之后再次测量厚度，并根据膜厚的变化计算指定处理方法产生的蚀刻速率。
下列是组合物JJ(表11)、组合物NN(表12)、组合物HH(表13)、组合物FF(表14)和组合物GG(表15)的IDL蚀刻速率。
表11
Figure BDA0000043666530000171
表12
表13
Figure BDA0000043666530000173
表14
Figure BDA0000043666530000174
表15
Figure BDA0000043666530000181
本发明的组合物的清洁能力也可以通过下面的测试进行说明，其中将包含下列结构的晶片，即光致抗蚀机/掺杂碳的氧化物/氮化硅/铜(被氮化硅穿通以露出铜)的晶片的微电子结构放入指定温度的清洁溶液中浸泡指定时间，然后用水冲洗、干燥，并通过SEM检查测定清洁度。结果列于表16中。
表16
Figure BDA0000043666530000182
本发明的组合物的清洁能力也可以通过下面的测试进行说明，其中将包含下列结构(即TiN/AI/TiN/Ti/Si)的铝晶片的微电子结构放入指定温度的清洁溶液中浸泡指定时间，然后用水冲洗、干燥，并通过SEM检查测定清洁度。结果列于表17中。
表17
Figure BDA0000043666530000183
本发明的清洁组合物的铝蚀刻速率也可用下表18中的蚀刻速率数据进行说明。该蚀刻速率利用下列的测试程序进行测定。
采用大约13×50mm的铝箔或铜箔的薄片。测量箔片厚度。在用2-丙醇、蒸馏水和丙酮清洁箔片后，将箔片放入干燥箱干燥。然后将清洁和干燥过的箔片放入盖子松开的瓶中，瓶中有预热过的本发明清洁组合物，并将其置于指定温度的真空箱中2到4个小时。在进行处理和从箱和瓶中取出后，用大量的蒸馏水冲洗清洁过的箔片，并放入干燥箱中干燥大约1小时，然后使其冷却至室温，再根据重量损失或重量变化来确定蚀刻速率。
表18
Figure BDA0000043666530000191
尽管已经参考本发明的具体实施方式描述了本发明，但应理解在不偏离在此公开的创造性概念的实质和范围内，可以进行变化、修改和变更。因此，旨在包含落入所附权利要求书的范围和实质内的所有变化、修改和变更。

Claims (7)

1.清洁组合物，其能够从铜金属化且具有低κ或高κ电介质的微电子基底清洁高度交联或硬化的光致抗蚀剂、后等离子体蚀刻/灰化残留物、牺牲光吸收材料、防反射涂层、和含有钛或钽的结构，所述清洁组合物包含：
0.1至30重量％的过氧化氢，作为氧化剂；
1至99.9重量％的环丁砜，作为具有氢键键合能力以及与所述过氧化氢发生最小程度的反应或不发生反应的极性有机溶剂；
大于0且小于等于30重量％的氢氧化四烷基铵，作为碱；
0.1至5重量％的螯合剂或金属络合剂，其选自反-1,2-环己烷二胺四乙酸和乙二胺四(亚甲基膦酸)；和
0.1至98重量％的水，
其中该清洁组合物中各成分含量百分比的总和等于100%。
2.权利要求1所述的清洁组合物，其中所述极性有机溶剂在组合物中存在的量为10至90重量％。
3.权利要求2所述的清洁组合物，其包含：环丁砜、氢氧化四甲基铵、反-1,2-环己烷二胺四乙酸、过氧化氢和水。
4.权利要求2所述的清洁组合物，其包含：环丁砜、氢氧化四甲基铵、乙二胺四(亚甲基膦酸)、过氧化氢和水。
5.权利要求1所述的清洁组合物，所述清洁组合物仅由所述组分组成。
6.权利要求5所述的清洁组合物，其由以下组成：环丁砜、反-1,2-环己烷二胺四乙酸、氢氧化四甲基铵、过氧化氢和水。
7.一种用于从铜金属化且具有低κ或高κ电介质的微电子基底清洁高度交联或硬化的光致抗蚀剂、后等离子体蚀刻/灰化残留物、牺牲光吸收材料、防反射涂层、和含有钛或钽的结构的方法，所述方法包含将基底与清洁组合物接触足够的时间以从微电子基底清洁高度交联或硬化的光致抗蚀剂、后等离子体蚀刻/灰化残留物、牺牲光吸收材料、防反射涂层、和含有钛或钽的结构，其中所述清洁组合物包含权利要求1至6任一项的组合物。
CN2011100064160A 2002-06-07 2003-05-27 包含氧化剂和有机溶剂的微电子清洁组合物 Expired - Lifetime CN102061228B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38680002P 2002-06-07 2002-06-07
US60/386,800 2002-06-07

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN038130351A Division CN1659481A (zh) 2002-06-07 2003-05-27 包含氧化剂和有机溶剂的微电子清洁组合物

Publications (2)

Publication Number Publication Date
CN102061228A CN102061228A (zh) 2011-05-18
CN102061228B true CN102061228B (zh) 2013-02-13

Family

ID=29736216

Family Applications (2)

Application Number Title Priority Date Filing Date
CN038130351A Pending CN1659481A (zh) 2002-06-07 2003-05-27 包含氧化剂和有机溶剂的微电子清洁组合物
CN2011100064160A Expired - Lifetime CN102061228B (zh) 2002-06-07 2003-05-27 包含氧化剂和有机溶剂的微电子清洁组合物

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN038130351A Pending CN1659481A (zh) 2002-06-07 2003-05-27 包含氧化剂和有机溶剂的微电子清洁组合物

Country Status (17)

Country Link
US (1) US7419945B2 (zh)
EP (2) EP2034365A3 (zh)
JP (1) JP4304154B2 (zh)
KR (1) KR100958069B1 (zh)
CN (2) CN1659481A (zh)
AU (1) AU2003238773A1 (zh)
BR (1) BR0311827A (zh)
CA (1) CA2488735A1 (zh)
IL (1) IL165580A (zh)
IN (1) IN2004CH02761A (zh)
MY (1) MY139208A (zh)
NO (1) NO20050076L (zh)
PL (1) PL208299B1 (zh)
RS (1) RS50930B (zh)
TW (1) TWI322827B (zh)
WO (1) WO2003104900A2 (zh)
ZA (1) ZA200409621B (zh)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
TW200505975A (en) * 2003-04-18 2005-02-16 Ekc Technology Inc Aqueous fluoride compositions for cleaning semiconductor devices
BRPI0418529A (pt) * 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
EP1840659A3 (en) * 2004-02-11 2009-12-02 Mallinckrodt Baker, Inc. Composition for cleaning microelectronic substrates containing halogen oxygen acids and derivatives thereof
ATE488570T1 (de) * 2004-03-01 2010-12-15 Mallinckrodt Baker Inc Nanoelektronik- und mikroelektronik- reinigungsmittel
JP4524744B2 (ja) * 2004-04-14 2010-08-18 日本電気株式会社 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
SG161211A1 (en) * 2005-04-04 2010-05-27 Mallinckrodt Baker Inc Compositions for cleaning ion implanted photoresist in front end of line applications
US7754668B2 (en) * 2005-05-06 2010-07-13 Mallinckrodt Baker. Inc Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
CN1862392B (zh) * 2005-05-13 2011-08-03 安集微电子（上海）有限公司 一种去除光阻层的组合物及其使用方法
CN1862391B (zh) * 2005-05-13 2013-07-10 安集微电子（上海）有限公司 除光阻层的组合物及其使用方法
US20090215269A1 (en) * 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
TWI622639B (zh) * 2005-06-07 2018-05-01 恩特葛瑞斯股份有限公司 金屬及介電相容犠牲抗反射塗層清洗及移除組成物
KR101221560B1 (ko) * 2005-09-02 2013-01-14 주식회사 동진쎄미켐 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물
KR101444468B1 (ko) * 2005-10-05 2014-10-30 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제
EP1946358A4 (en) 2005-11-09 2009-03-04 Advanced Tech Materials COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS WITH LOW DIELECTRICITY CONSTANT MATERIALS
KR101319113B1 (ko) * 2006-04-13 2013-10-17 동우 화인켐 주식회사 금속용 세정제
TWI611047B (zh) * 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
CN101632042B (zh) * 2007-03-16 2012-06-13 三菱瓦斯化学株式会社 洗涤用组合物、半导体元件的制造方法
JP4952375B2 (ja) 2007-05-23 2012-06-13 株式会社明電舎 レジスト除去方法及びその装置
US8110508B2 (en) * 2007-11-22 2012-02-07 Samsung Electronics Co., Ltd. Method of forming a bump structure using an etching composition for an under bump metallurgy layer
CN101952485A (zh) * 2007-11-22 2011-01-19 出光兴产株式会社 蚀刻液组合物
WO2009072402A1 (ja) 2007-12-04 2009-06-11 Meidensha Corporation レジスト除去方法及びその装置
CN101359189B (zh) * 2008-09-17 2011-04-27 电子科技大学 正性光敏聚酰亚胺光刻胶用显影液
US20100178887A1 (en) 2009-01-13 2010-07-15 Millam Michael J Blast shield for use in wireless transmission system
MX2011008789A (es) * 2009-02-25 2011-09-29 Avantor Performance Mat Inc Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores.
WO2010098899A1 (en) * 2009-02-25 2010-09-02 Mallinckrodt Baker, Inc. Multipurpose acidic, organic solvent based microelectronic cleaning composition
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8669189B2 (en) 2009-06-25 2014-03-11 Lam Research Ag Method for treating a semiconductor wafer
WO2010150134A2 (en) * 2009-06-25 2010-12-29 Lam Research Ag Method for treating a semiconductor wafer
EP2348142B1 (en) * 2010-01-25 2018-12-05 Westinghouse Electric Company Llc Method and composition for removing scale deposits formed on a metal surface within a steam generating system
KR101664951B1 (ko) 2010-01-26 2016-10-11 도미니온 엔지니어링 인코포레이티드 증착물들을 제거하기 위한 방법 및 조성물
CN101908503A (zh) * 2010-07-21 2010-12-08 河北工业大学 超大规模集成电路多层铜布线化学机械抛光后的洁净方法
US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
CN101968610A (zh) * 2010-08-12 2011-02-09 武汉华灿光电有限公司 一种全湿刻蚀后去胶的方法
CN103958640B (zh) * 2011-10-21 2016-05-18 安格斯公司 无胺cmp后组合物及其使用方法
JP6066552B2 (ja) * 2011-12-06 2017-01-25 関東化學株式会社 電子デバイス用洗浄液組成物
EP2814895A4 (en) * 2012-02-15 2015-10-07 Entegris Inc POST-CMP DISPOSAL USING COMPOSITIONS AND USE PROCESSES
KR101827756B1 (ko) * 2012-12-03 2018-02-12 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자용 세정액 및 이를 이용한 세정방법
WO2015002272A1 (ja) * 2013-07-05 2015-01-08 和光純薬工業株式会社 エッチング剤、エッチング方法およびエッチング剤調製液
JP2015108041A (ja) * 2013-12-03 2015-06-11 ダイキン工業株式会社 洗浄用組成物
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
CN103955123A (zh) * 2014-04-11 2014-07-30 武汉高芯科技有限公司 一种离子注入后晶片的湿法去胶液及光刻胶去除方法
US9567493B2 (en) * 2014-04-25 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. CMP slurry solution for hardened fluid material
US9908821B2 (en) 2015-09-29 2018-03-06 Winfield Solutions, Llc Micronutrient compositions and systems and methods of using same
US9938201B1 (en) 2016-02-25 2018-04-10 Winfield Solutions, Llc Micronutrient compositions containing zinc and systems and methods of using same
KR102152665B1 (ko) 2016-03-31 2020-09-07 후지필름 가부시키가이샤 반도체 제조용 처리액, 및 패턴 형성 방법
JP6880085B2 (ja) 2017-02-20 2021-06-02 富士フイルム株式会社 薬液、薬液収容体、及び、パターン形成方法
AT519943A1 (de) * 2017-04-29 2018-11-15 Thonhauser Gmbh Zusammensetzung
CN107338126A (zh) * 2017-06-23 2017-11-10 昆山欣谷微电子材料有限公司 一种水基微电子剥离和清洗液组合物
CN107357143B (zh) 2017-07-25 2018-06-19 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
WO2020146748A1 (en) 2019-01-11 2020-07-16 Versum Materials Us, Llc Hafnium oxide corrosion inhibitor
JP7271993B2 (ja) * 2019-02-19 2023-05-12 三菱ケミカル株式会社 セリウム化合物除去用洗浄液、洗浄方法及び半導体ウェハの製造方法
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
CN112430508B (zh) * 2020-12-09 2021-10-19 淄博鑫欧瑞环保科技有限公司 一种消毒粉雾化装置清洁剂、应用及其清洁方法
US20230033363A1 (en) * 2021-07-23 2023-02-02 Ascend Performance Materials Operations Llc Aqueous solutions containing amino carboxylic acid chelators

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1309785A (zh) * 1998-05-18 2001-08-22 马林克罗特有限公司 用于清洗微电子衬底的含硅酸盐碱性组合物

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673099A (en) * 1970-10-19 1972-06-27 Bell Telephone Labor Inc Process and composition for stripping cured resins from substrates
BE789090A (fr) * 1971-09-22 1973-01-15 Western Electric Co Procede et solution d'attaque de semi-conducteurs
US4096243A (en) * 1976-02-09 1978-06-20 Clairol Incorporated Composition for lightening hair containing an oxidizing agent and certain quaternary amines
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS60203944A (ja) * 1984-03-28 1985-10-15 Mitsubishi Gas Chem Co Inc ポジ型フオトレジストの除去法
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US5037724A (en) 1988-02-25 1991-08-06 Hoya Corporation Peeling solution for photo- or electron beam-sensitive resin
US5002687A (en) * 1989-04-13 1991-03-26 Lever Brothers Company, Division Of Conopco, Inc. Fabric washing compositions
EP0482275B1 (en) * 1990-10-22 1996-07-10 The Procter & Gamble Company Stable liquid detergent compositions containing bleach
TW263531B (zh) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
JP3183310B2 (ja) * 1992-09-25 2001-07-09 三菱瓦斯化学株式会社 半導体基板の洗浄液
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5885362A (en) * 1995-07-27 1999-03-23 Mitsubishi Chemical Corporation Method for treating surface of substrate
US5911836A (en) * 1996-02-05 1999-06-15 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
US6096138A (en) * 1997-04-30 2000-08-01 Bausch & Lomb Incorporated Method for inhibiting the deposition of protein on contact lens
US5989353A (en) * 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
JPH11121418A (ja) * 1997-10-14 1999-04-30 Kao Corp 洗浄剤組成物及び洗浄方法
JP2000056478A (ja) * 1998-08-04 2000-02-25 Showa Denko Kk サイドウォール除去液
JP2000202617A (ja) * 1999-01-06 2000-07-25 Nippon Steel Corp 溶融金属容器の調心・傾転装置
EP1039518A1 (en) * 1999-03-24 2000-09-27 Interuniversitair Micro-Elektronica Centrum Vzw Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2003005383A (ja) * 2000-11-30 2003-01-08 Tosoh Corp レジスト剥離剤
KR100822236B1 (ko) * 2000-11-30 2008-04-16 토소가부시키가이샤 레지스트 박리제
JP4267359B2 (ja) * 2002-04-26 2009-05-27 花王株式会社 レジスト用剥離剤組成物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1309785A (zh) * 1998-05-18 2001-08-22 马林克罗特有限公司 用于清洗微电子衬底的含硅酸盐碱性组合物

Also Published As

Publication number Publication date
EP2034365A3 (en) 2009-11-11
WO2003104900A2 (en) 2003-12-18
CN102061228A (zh) 2011-05-18
TWI322827B (en) 2010-04-01
CN1659481A (zh) 2005-08-24
WO2003104900A3 (en) 2004-02-19
PL373809A1 (en) 2005-09-19
US20050239673A1 (en) 2005-10-27
RS50930B (sr) 2010-08-31
EP2034365A2 (en) 2009-03-11
TW200407419A (en) 2004-05-16
EP1520211A2 (en) 2005-04-06
BR0311827A (pt) 2005-03-29
ZA200409621B (en) 2006-07-26
CA2488735A1 (en) 2003-12-18
PL208299B1 (pl) 2011-04-29
NO20050076L (no) 2005-01-06
IL165580A0 (en) 2006-01-15
JP4304154B2 (ja) 2009-07-29
MY139208A (en) 2009-08-28
US7419945B2 (en) 2008-09-02
KR100958069B1 (ko) 2010-05-17
IN2004CH02761A (zh) 2006-02-10
AU2003238773A1 (en) 2003-12-22
JP2005529487A (ja) 2005-09-29
KR20050019103A (ko) 2005-02-28
IL165580A (en) 2009-05-04
RS106204A (en) 2007-02-05

Similar Documents

Publication Publication Date Title
CN102061228B (zh) 包含氧化剂和有机溶剂的微电子清洁组合物
CN102135735A (zh) 用于微电子基底的清洁组合物
JP4393553B2 (ja) ハロゲン酸素酸、その塩及び誘導体含有、マイクロエレクトロニクス洗浄組成物
JP4188232B2 (ja) 選択的フォトレジストストリッピングおよびプラズマ灰化残渣洗浄のための、アンモニア不含フッ化物塩含有マイクロエレクトロニクス洗浄組成物
CN1961065B (zh) 纳米电子和微电子清洗组合物
TW200428512A (en) Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
KR100642185B1 (ko) 프럭토스를 함유하는 비-수성 마이크로전자 세정 조성물
US7393819B2 (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP2007514983A (ja) 非水性、非腐食性マイクロエレクトロニクス洗浄組成物
KR100944444B1 (ko) 기판과의 양립성이 향상된 무암모니아 알칼리 마이크로일렉트로닉 세정 조성물

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170425

Address after: American Pennsylvania

Patentee after: AVANTOR PERFORMANCE MATERIALS, Inc.

Address before: New jersey, USA

Patentee before: AVANTOR PERFORMANCE MATERIALS, Inc.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20130213