JP2008251904A - 載置台の表面処理方法 - Google Patents
載置台の表面処理方法 Download PDFInfo
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- JP2008251904A JP2008251904A JP2007092378A JP2007092378A JP2008251904A JP 2008251904 A JP2008251904 A JP 2008251904A JP 2007092378 A JP2007092378 A JP 2007092378A JP 2007092378 A JP2007092378 A JP 2007092378A JP 2008251904 A JP2008251904 A JP 2008251904A
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- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000004381 surface treatment Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000012545 processing Methods 0.000 claims description 74
- 238000012546 transfer Methods 0.000 claims description 20
- 238000005498 polishing Methods 0.000 claims description 11
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 230000004308 accommodation Effects 0.000 claims description 4
- 230000001186 cumulative effect Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 145
- 239000007789 gas Substances 0.000 description 51
- 238000005530 etching Methods 0.000 description 9
- 238000009499 grossing Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 8
- 238000003672 processing method Methods 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】チャンバ内に配置されたESCを有し、該ESCはウエハWが載置される載置面を有する基板処理装置において、チャンバ内にウエハWを搬入しS31、該ウエハWをESCの載置面に載置し、さらに、静電電極板に高直流電圧を印加してウエハWを載置面に静電吸着しS32、処理空間Sに高周波電力を供給して処理ガスからプラズマを発生S33させてウエハWを熱膨張させ、次いで、プラズマを消滅させ、ウエハWをチャンバ内から搬出しS34、高周波電力供給の積算時間が所定時間を超えたか否かを判別しS35、高周波電力供給の積算時間が所定時間を超えている場合には、処理を終了し、超えていない場合には、上述した処理を繰り返す。
【選択図】図3
Description
25枚のウエハWを準備し、該ウエハWを用いて図3の処理を実行した。このとき、ステップS33におけるガス導入シャワーヘッド29及びサセプタ12が供給する高周波電力をそれぞれ3300W及び3800Wに設定した。また、ステップS35における所定時間を20時間に設定した。なお、ウエハW1枚あたりの高周波電力供給時間を60秒に設定したので、本実施例ではウエハWが1200回交換された。
載置面が砥石によって研削されただけのESC13を有する基板処理装置10を準備し、該基板処理装置10によってウエハWにエッチング処理を施し、該エッチング処理におけるウエハWの温度を測定したところ、該温度はウエハWの中心から100mmの箇所で約52℃〜55.5℃であり、平均温度は約54℃であった。
10 基板処理装置
11 チャンバ
12 サセプタ
13 ESC
19 下部高周波電源
21 静電電極板
27 伝熱ガス供給孔
29 ガス導入シャワーヘッド
31 上部高周波電源
Claims (10)
- 基板にプラズマ処理を施す基板処理装置の収容室内に配置され、前記基板を載置する載置面を有する載置台の表面処理方法であって、
前記載置された基板が熱膨張する膨張ステップを有することを特徴とする表面処理方法。 - 前記基板の熱膨張係数は前記載置台の熱膨張係数と異なることを特徴とする請求項1記載の載置台の表面処理方法。
- 前記基板処理装置は、前記収容室内に処理ガスを導入するガス導入装置と、前記収容室内に高周波電力を供給する電極とを備え、
前記膨張ステップでは、前記供給された高周波電力によって前記処理ガスから生成されたプラズマが前記基板を加熱することを特徴とする請求項1又は2記載の載置台の表面処理方法。 - 前記膨張ステップでは、前記電極が供給可能な最大の高周波電力を供給することを特徴とする請求項3記載の載置台の表面処理方法。
- 前記基板処理装置は、前記載置された基板及び前記載置面の間に伝熱ガスを供給するガス供給装置を備え、
前記膨張ステップでは、前記ガス供給装置が前記伝熱ガスの供給を停止することを特徴とする請求項1乃至4のいずれか1項に記載の載置台の表面処理方法。 - 前記載置台は、前記基板を静電吸着する吸着装置を備え、
前記膨張ステップでは、前記吸着装置が前記基板を静電吸着することを特徴とする請求項1乃至5のいずれか1項に記載の載置台の表面処理方法。 - 前記膨張ステップを繰り返して実行する請求項1乃至6のいずれか1項に記載の載置台の表面処理方法。
- 前記膨張ステップを繰り返す毎に、前記載置される基板を交換することを特徴とする請求項7記載の載置台の表面処理方法。
- 前記膨張ステップの後に、前記載置された基板を前記収容室内から搬出する搬出ステップと、
該搬出された基板における前記載置台の載置面との接触面から付着物を除去する除去ステップと、
前記基板の接触面を再研磨する再研磨ステップを有することを特徴とする請求項7又は8記載の載置台の表面処理方法。 - 前記基板は前記接触面を覆う膜を有し、該膜の硬度は前記載置面の硬度よりも低いことを特徴とする請求項1乃至9のいずれか1項に記載の載置台の表面処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007092378A JP5295515B2 (ja) | 2007-03-30 | 2007-03-30 | 載置台の表面処理方法 |
CN2008100869172A CN101276775B (zh) | 2007-03-30 | 2008-03-28 | 载置台的表面处理方法 |
KR1020080028971A KR100978167B1 (ko) | 2007-03-30 | 2008-03-28 | 탑재대의 표면 처리 방법 |
TW097111203A TWI429015B (zh) | 2007-03-30 | 2008-03-28 | 載置台的表面處理方法 |
US12/057,975 US8343372B2 (en) | 2007-03-30 | 2008-03-28 | Surface processing method for mounting stage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007092378A JP5295515B2 (ja) | 2007-03-30 | 2007-03-30 | 載置台の表面処理方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008251904A true JP2008251904A (ja) | 2008-10-16 |
JP5295515B2 JP5295515B2 (ja) | 2013-09-18 |
Family
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JP2007092378A Active JP5295515B2 (ja) | 2007-03-30 | 2007-03-30 | 載置台の表面処理方法 |
Country Status (5)
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US (1) | US8343372B2 (ja) |
JP (1) | JP5295515B2 (ja) |
KR (1) | KR100978167B1 (ja) |
CN (1) | CN101276775B (ja) |
TW (1) | TWI429015B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017157727A (ja) * | 2016-03-03 | 2017-09-07 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105189812B (zh) * | 2013-03-15 | 2017-10-20 | 应用材料公司 | 用于基板的载具 |
US9338829B2 (en) | 2014-02-14 | 2016-05-10 | Varian Semiconductor Equipment Associates, Inc. | Heated platen with improved temperature uniformity |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0513558A (ja) * | 1990-12-25 | 1993-01-22 | Ngk Insulators Ltd | ウエハー加熱装置及びその製造方法 |
JPH09218104A (ja) * | 1996-02-14 | 1997-08-19 | Sony Corp | 基板の温度測定装置 |
JP2001127041A (ja) * | 1999-10-26 | 2001-05-11 | Matsushita Electric Ind Co Ltd | 基板のプラズマ処理装置およびプラズマ処理方法 |
JP2006286874A (ja) * | 2005-03-31 | 2006-10-19 | Komatsu Electronic Metals Co Ltd | ウェーハ熱処理用治具及び熱処理後のウェーハ |
Family Cites Families (11)
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US5548470A (en) * | 1994-07-19 | 1996-08-20 | International Business Machines Corporation | Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity |
US6365495B2 (en) * | 1994-11-14 | 2002-04-02 | Applied Materials, Inc. | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature |
US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
JP4312372B2 (ja) * | 2000-12-11 | 2009-08-12 | 日本碍子株式会社 | 静電チャックおよびその製造方法 |
US7843632B2 (en) * | 2006-08-16 | 2010-11-30 | Cymer, Inc. | EUV optics |
US7341673B2 (en) * | 2003-08-12 | 2008-03-11 | Lam Research Corporation | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission |
AU2003272478A1 (en) | 2002-09-19 | 2004-04-08 | Applied Materials, Inc. | Electrostatic chuck having a low level of particle generation and method of fabricating same |
US8055125B2 (en) | 2005-07-14 | 2011-11-08 | Tokyo Electron Limited | Substrate stage mechanism and substrate processing apparatus |
JP2007258240A (ja) | 2006-03-20 | 2007-10-04 | Tokyo Electron Ltd | 表面処理方法 |
US8450193B2 (en) * | 2006-08-15 | 2013-05-28 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
US7655933B2 (en) * | 2006-08-15 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
-
2007
- 2007-03-30 JP JP2007092378A patent/JP5295515B2/ja active Active
-
2008
- 2008-03-28 CN CN2008100869172A patent/CN101276775B/zh not_active Expired - Fee Related
- 2008-03-28 TW TW097111203A patent/TWI429015B/zh active
- 2008-03-28 KR KR1020080028971A patent/KR100978167B1/ko active IP Right Grant
- 2008-03-28 US US12/057,975 patent/US8343372B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0513558A (ja) * | 1990-12-25 | 1993-01-22 | Ngk Insulators Ltd | ウエハー加熱装置及びその製造方法 |
JPH09218104A (ja) * | 1996-02-14 | 1997-08-19 | Sony Corp | 基板の温度測定装置 |
JP2001127041A (ja) * | 1999-10-26 | 2001-05-11 | Matsushita Electric Ind Co Ltd | 基板のプラズマ処理装置およびプラズマ処理方法 |
JP2006286874A (ja) * | 2005-03-31 | 2006-10-19 | Komatsu Electronic Metals Co Ltd | ウェーハ熱処理用治具及び熱処理後のウェーハ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017157727A (ja) * | 2016-03-03 | 2017-09-07 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
US10424488B2 (en) | 2016-03-03 | 2019-09-24 | Panasonic Intellectual Property Management Co., Ltd. | Method of manufacturing electronic component |
Also Published As
Publication number | Publication date |
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TWI429015B (zh) | 2014-03-01 |
KR20080089256A (ko) | 2008-10-06 |
US20080237030A1 (en) | 2008-10-02 |
CN101276775B (zh) | 2012-04-25 |
JP5295515B2 (ja) | 2013-09-18 |
TW200908197A (en) | 2009-02-16 |
US8343372B2 (en) | 2013-01-01 |
KR100978167B1 (ko) | 2010-08-25 |
CN101276775A (zh) | 2008-10-01 |
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