JP2008244428A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
- Publication number
- JP2008244428A JP2008244428A JP2007334741A JP2007334741A JP2008244428A JP 2008244428 A JP2008244428 A JP 2008244428A JP 2007334741 A JP2007334741 A JP 2007334741A JP 2007334741 A JP2007334741 A JP 2007334741A JP 2008244428 A JP2008244428 A JP 2008244428A
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- Prior art keywords
- oxide film
- insulating film
- manufacturing
- high dielectric
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000002243 precursor Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 79
- 238000000231 atomic layer deposition Methods 0.000 claims description 51
- 239000000203 mixture Substances 0.000 claims description 40
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 10
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 10
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 10
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 claims description 5
- HVXCTUSYKCFNMG-UHFFFAOYSA-N aluminum oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[Al+3] HVXCTUSYKCFNMG-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 15
- 238000010030 laminating Methods 0.000 claims 6
- 239000010410 layer Substances 0.000 abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract description 6
- 239000011229 interlayer Substances 0.000 abstract description 3
- 238000005019 vapor deposition process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 172
- 238000010926 purge Methods 0.000 description 31
- 238000002347 injection Methods 0.000 description 27
- 239000007924 injection Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000000354 decomposition reaction Methods 0.000 description 21
- 239000007789 gas Substances 0.000 description 21
- 229910052735 hafnium Inorganic materials 0.000 description 13
- 239000010409 thin film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 150000001408 amides Chemical class 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229910052726 zirconium Inorganic materials 0.000 description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 2
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- -1 purge Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
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- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】高誘電絶縁膜(140)上に第3の絶縁膜(150)を形成する。第3の絶縁膜(150)は、NANDフラッシュ素子のフローティングゲートとコントロールゲートとの間の誘電体膜の上部酸化膜、キャパシタ製造工程ではキャパシタの下部電極とキャパシタの上部電極との間の層間絶縁膜として用いるために形成され、望ましくはHTO酸化膜で形成する。この場合、CVD方法(例えば、LPCVD方法)を用いて10〜50Åの厚さで形成する。これにより、第2の絶縁膜(130)、高誘電絶縁膜(140)及び第3の絶縁膜(150)からなるNANDフラッシュ素子においてOKO構造の高誘電体膜(160)が形成される。
【選択図】図1C
Description
110 :第1の絶縁膜
120 :第1の導電膜
130 :第2の絶縁膜
140 :高誘電絶縁膜
150 :第3の絶縁膜
160 :高誘電体膜
170 :第2の導電膜
Claims (33)
- 半導体基板上にHf[C5H4(CH3)]2(CH3)2、Hf[C5H4(CH3)]2(OCH3)CH3及びHf[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて400〜500℃の温度で形成されたハフニウム酸化膜(HfO2)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にZr[C5H4(CH3)]2(CH3)2、Zr[C5H4(CH3)]2(OCH3)CH3及びZr[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて400〜500℃の温度で形成されたジルコニウム酸化膜(ZrO2)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にHf[C5H4(CH3)]2(CH3)2、Hf[C5H4(CH3)]2(OCH3)CH3及びHf[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて400〜500℃の温度で形成されたハフニウム酸化膜(HfO2)とアルミニウム酸化膜(Al2O3)を交互に積層して高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にZr[C5H4(CH3)]2(CH3)2、Zr[C5H4(CH3)]2(OCH3)CH3及びZr[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて400〜500℃の温度で形成されたジルコニウム酸化膜(ZrO2)とアルミニウム酸化膜(Al2O3)を交互に積層して高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にHf[C5H4(CH3)]2(CH3)2、Hf[C5H4(CH3)]2(OCH3)CH3及びHf[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて400〜500℃の温度で形成されたハフニウム酸化膜(HfO2)とアルミニウム酸化膜(Al2O3)を交互に積層してナノ-ミックスされたハフニウム-アルミニウム酸化膜(HfAlO)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にZr[C5H4(CH3)]2(CH3)2、Zr[C5H4(CH3)]2(OCH3)CH3及びZr[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて400〜500℃の温度で形成されたジルコニウム酸化膜(ZrO2)とアルミニウム酸化膜(Al2O3)を交互に積層してナノ-ミックスされたジルコニウム-アルミニウム酸化膜(ZrAlO)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 前記高誘電絶縁膜は、450〜500℃の温度で形成される請求項1〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記高誘電絶縁膜は、原子層蒸着法で形成される請求項1〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記高誘電絶縁膜は、40〜500Åの厚さで形成される請求項1〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記ハフニウム酸化膜(HfO2)及び前記アルミニウム酸化膜(Al2O3)のそれぞれは、10〜30Åの厚さで形成される請求項3に記載の半導体素子の製造方法。
- 前記ジルコニウム酸化膜(ZrO2)及び前記アルミニウム酸化膜(Al2O3)のそれぞれは、10〜30Åの厚さで形成される請求項4に記載の半導体素子の製造方法。
- 前記ハフニウム-アルミニウム酸化膜(HfAlO)は、Hf:Alの組成比が2:1〜30:1である請求項5に記載の半導体素子の製造方法。
- 前記ハフニウム-アルミニウム酸化膜(HfAlO)は、Hf:Alの組成比が24:1である請求項5に記載の半導体素子の製造方法。
- 前記ジルコニウム-アルミニウム酸化膜(ZrAlO)は、Zr:Alの組成比が2:1〜30:1である請求項6に記載の半導体素子の製造方法。
- 前記ジルコニウム-アルミニウム酸化膜(ZrAlO)は、Zr:Alの組成比が24:1である請求項6に記載の半導体素子の製造方法。
- 前記組成比は、原子層蒸着法で単位サイクルの回数で調節される請求項14又は15に記載の半導体素子の製造方法。
- 前記ハフニウム酸化膜(HfO2)及び前記アルミニウム酸化膜(Al2O3)のそれぞれは、単位サイクル当たり0.1Å〜9.9Åの厚さで形成される請求項5に記載の半導体素子の製造方法。
- 前記ジルコニウム酸化膜(ZrO2)及び前記アルミニウム酸化膜(Al2O3)のそれぞれは、単位サイクル当たり0.1Å〜9.9Åの厚さで形成される請求項6に記載の半導体素子の製造方法。
- 前記アルミニウム酸化膜(Al2O3)は、トリメチルアルミニウム(TriMethyl Aluminum, Al(CH3)3)を前駆体として用いる請求項3〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記アルミニウム酸化膜(Al2O3)は、400〜500℃の温度で形成される請求項3〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記アルミニウム酸化膜(Al2O3)は、450〜500℃の温度で形成される請求項3〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記高誘電絶縁膜下部には、電子格納膜、誘電体膜の下部酸化膜及びキャパシタの下部電極のいずれか一つが形成される請求項1〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記高誘電絶縁膜の上部及び下部に、HTO酸化膜が形成される請求項1〜6のいずれか一項に記載の半導体素子の製造方法。
- 前記下部HTO酸化膜の形成前と前記上部HTO酸化膜の形成後にプラズマ窒化処理段階をさらに含む請求項23に記載の半導体素子の製造方法。
- 半導体基板上にHf[C5H4(CH3)]2(CH3)2、Hf[C5H4(CH3)]2(OCH3)CH3及びHf[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて形成されたハフニウム酸化膜(HfO2)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にZr[C5H4(CH3)]2(CH3)2、Zr[C5H4(CH3)]2(OCH3)CH3及びZr[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて形成されたジルコニウム酸化膜(ZrO2)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にHf[C5H4(CH3)]2(CH3)2、Hf[C5H4(CH3)]2(OCH3)CH3及びHf[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて形成されたハフニウム酸化膜(HfO2)とアルミニウム酸化膜(Al2O3)を交互に積層して高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にZr[C5H4(CH3)]2(CH3)2、Zr[C5H4(CH3)]2(OCH3)CH3及びZr[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて形成されたジルコニウム酸化膜(ZrO2)とアルミニウム酸化膜(Al2O3)を交互に積層して高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にHf[C5H4(CH3)]2(CH3)2、Hf[C5H4(CH3)]2(OCH3)CH3及びHf[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて形成されたハフニウム酸化膜(HfO2)とアルミニウム酸化膜(Al2O3)を交互に積層してナノ-ミックスされたハフニウム-アルミニウム酸化膜(HfAlO)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 半導体基板上にZr[C5H4(CH3)]2(CH3)2、Zr[C5H4(CH3)]2(OCH3)CH3及びZr[C5H4(CH2CH3)][N(CH3)(CH2CH3)]3のいずれか一つの前駆体を用いて形成されたジルコニウム酸化膜(ZrO2)とアルミニウム酸化膜(Al2O3)を交互に積層してナノ-ミックスされたジルコニウム-アルミニウム酸化膜(ZrAlO)を含む高誘電絶縁膜を形成する半導体素子の製造方法。
- 前記高誘電絶縁膜は、400〜500℃の温度で形成される請求項25〜30のいずれか一項に記載の半導体素子の製造方法。
- 前記高誘電絶縁膜は、450〜500℃の温度で形成される請求項25〜30のいずれか一項に記載の半導体素子の製造方法。
- 前記高誘電絶縁膜は、原子層蒸着法で形成される請求項25〜30のいずれか一項に記載の半導体素子の製造方法。
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Also Published As
Publication number | Publication date |
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CN101271841B (zh) | 2010-09-08 |
TW200839872A (en) | 2008-10-01 |
JP5084492B2 (ja) | 2012-11-28 |
US20080233762A1 (en) | 2008-09-25 |
KR100805018B1 (ko) | 2008-02-20 |
CN101271841A (zh) | 2008-09-24 |
JP2013012746A (ja) | 2013-01-17 |
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