JP2008240088A

JP2008240088A - Vapor deposition apparatus, vapor deposition method, electro-optical apparatus, and electronic apparatus

Info

Publication number: JP2008240088A
Application number: JP2007083689A
Authority: JP
Inventors: Shiro Kobayashi; 四郎小林
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2007-03-28
Filing date: 2007-03-28
Publication date: 2008-10-09

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of securing good adhesiveness between a substrate to be treated and a vapor deposition mask in both of a region overlapping a load-carrying region by pressing and a region other than that and capable of enhancing the film forming accuracy to the substrate to be treated, a vapor deposition method, an electro-optical apparatus, and an electronic apparatus. <P>SOLUTION: The vapor deposition apparatus is provided with the vapor deposition mask 5 which has openings 511 on film forming patterns and has magnetism, and is arranged overlapping the film-formed surface side of the substrate 10 to be treated; a pressing part for pressing the substrate 10 to be treated toward the vapor deposition mask 5 from the opposite side to the film-formed surface of the substrate 10 to be treated; and a magnetic attracting part for magnetically attracting the vapor deposition mask 5 toward the substrate 10 to be treated from the opposite side to the film-formed surface of the substrate 10 to be treated, at least in the region other than the region overlapping the load-carrying region GR by the pressing. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、被処理基板に蒸着マスクを重ねて蒸着する蒸着装置、蒸着方法、電気光学装
置及び電子機器に関する。 The present invention relates to a vapor deposition apparatus, a vapor deposition method, an electro-optical device, and an electronic apparatus that deposit a vapor deposition mask on a substrate to be processed.

電気光学装置や半導体装置の製造工程に於いて、開口を有する蒸着マスクを被処理基板
に重ねて配置し、真空蒸着やスパッタリングで成膜を行うマスク蒸着法が知られている。
例えば電気光学装置である有機ＥＬ装置の有機機能層はマスク蒸着法で形成することが多
い。斯様なマスク蒸着法では、被処理基板と蒸着マスクとの間に隙間が生ずると成膜精度
が低下するため、被処理基板と蒸着マスクの密着性を確保することが必要となる。そのた
め、例えば蒸着マスクを被処理基板に重ねて配置し、その状態で被処理基板を蒸着マスク
に向けて押圧し、被処理基板と蒸着マスクとの密着性を確保している（特許文献１参照）
。 2. Description of the Related Art In a process for manufacturing an electro-optical device or a semiconductor device, a mask vapor deposition method is known in which a vapor deposition mask having an opening is placed on a substrate to be processed and a film is formed by vacuum vapor deposition or sputtering.
For example, an organic functional layer of an organic EL device that is an electro-optical device is often formed by a mask vapor deposition method. In such a mask vapor deposition method, if a gap is generated between the substrate to be processed and the vapor deposition mask, the film forming accuracy is lowered, and thus it is necessary to ensure adhesion between the substrate to be processed and the vapor deposition mask. Therefore, for example, a deposition mask is placed on the substrate to be processed, and in that state, the substrate to be processed is pressed against the deposition mask to ensure adhesion between the substrate to be processed and the deposition mask (see Patent Document 1). )
.

特開２００５−１５８５７１号公報JP 2005-158571 A

しかしながら、上記被処理基板を蒸着マスクに向けて押圧する構成は、その押圧の荷重
負荷領域と重なる領域では被処理基板と蒸着マスクの密着性を確保することができるもの
の、前記荷重負荷領域と重なる領域以外の領域での密着性は十分ではない。そのため、押
圧の荷重負荷領域と重なる領域以外の領域でも、被処理基板と蒸着マスクの密着性を確保
できる構成が求められている。 However, the configuration in which the substrate to be processed is pressed toward the vapor deposition mask can ensure adhesion between the substrate to be processed and the vapor deposition mask in a region overlapping the load load region of the press, but overlaps the load load region. Adhesion in areas other than the area is not sufficient. For this reason, there is a demand for a configuration that can ensure the adhesion between the substrate to be processed and the vapor deposition mask even in a region other than the region overlapping the load-loading region of the press.

本発明は上記課題に鑑み提案するものであって、押圧の荷重負荷領域と重なる領域とそ
れ以外の領域の双方で、被処理基板と蒸着マスクの良好な密着性を確保し、被処理基板へ
の成膜精度を高めることができる蒸着装置、蒸着方法、電気光学装置及び電子機器を提供
することを目的とする。 The present invention is proposed in view of the above problems, and ensures good adhesion between the substrate to be processed and the vapor deposition mask in both the region overlapping with the load-loading region of the press and the other region, to the substrate to be processed. An object of the present invention is to provide a vapor deposition apparatus, a vapor deposition method, an electro-optical device, and an electronic apparatus that can improve the film forming accuracy.

本発明の蒸着装置は、成膜パターンの開口を有すると共に磁性を有し、被処理基板の被
成膜面側に重ねて配置される蒸着マスクと、前記被処理基板の被成膜面と反対側から、前
記被処理基板を蒸着マスクに向けて押圧する押圧部と、前記被処理基板の被成膜面と反対
側から、少なくとも前記押圧による荷重負荷領域と重なる領域以外の領域で、前記蒸着マ
スクを前記被処理基板に向けて磁気吸引する磁気吸引部とを備えることを特徴とする。本
発明によれば、被処理基板１０とマスク基板５１の双方を互いに倣うように変形させて、
押圧の荷重負荷領域と重なる領域とそれ以外の領域の双方で、被処理基板と蒸着マスクの
良好な密着性を確保することが可能となり、被処理基板への成膜精度を高めることができ
る。 The vapor deposition apparatus of the present invention has an opening for a film formation pattern and has magnetism, and a vapor deposition mask disposed on the film formation surface side of the substrate to be processed, opposite to the film formation surface of the substrate to be processed. From the side, from the side opposite to the film formation surface of the substrate to be processed, the deposition unit that presses the substrate to be processed toward the deposition mask, and at least in the region other than the region overlapping the load-loading region by the pressing And a magnetic attraction unit that magnetically attracts the mask toward the substrate to be processed. According to the present invention, both the substrate 10 to be processed and the mask substrate 51 are deformed so as to follow each other,
It is possible to ensure good adhesion between the substrate to be processed and the vapor deposition mask in both the region overlapping with the pressing load-loading region and the other region, and the accuracy of film formation on the substrate to be processed can be improved.

本発明の蒸着装置は、前記蒸着マスクを、成膜パターンの開口を有すると共に磁性を有
する複数のマスク基板と、前記複数のマスク基板を保持するベース基板とで構成し、前記
マスク基板を前記磁気吸引部で磁気吸引することを特徴とする。複数のマスク基板をベー
ス基板で保持する蒸着マスクは、大型の被処理基板に対応する高強度化と、成膜パターン
に対応する開口の高精度化を実現することができるが、本発明によれば、その蒸着マスク
について、押圧の荷重負荷領域と重なる領域とそれ以外の領域の双方で、被処理基板と蒸
着マスクの良好な密着性を確保することが可能となり、被処理基板への成膜精度を高める
ことができる。特に、複数のマスク基板をベース基板で保持する蒸着マスクの場合、押圧
だけ行うと押圧箇所によっては被処理基板とマスク基板との間に大きな隙間が生ずるが、
マスク基板を磁気吸引することで前記隙間を解消し、被処理基板とマスク基板の良好な密
着性を確保することができる。 In the vapor deposition apparatus according to the present invention, the vapor deposition mask includes a plurality of mask substrates having openings of film formation patterns and having magnetism, and a base substrate holding the plurality of mask substrates, and the mask substrate is the magnetic It is characterized by magnetic attraction in the attraction part. A vapor deposition mask that holds a plurality of mask substrates with a base substrate can achieve high strength corresponding to a large substrate to be processed and high accuracy of an opening corresponding to a film formation pattern. For example, it becomes possible to secure good adhesion between the substrate to be processed and the vapor deposition mask in both the region overlapping the load-loading region of the pressing and the other region, and film formation on the substrate to be processed. Accuracy can be increased. In particular, in the case of a vapor deposition mask that holds a plurality of mask substrates with a base substrate, if only pressing is performed, a large gap is generated between the substrate to be processed and the mask substrate depending on the pressed location.
The gap can be eliminated by magnetically attracting the mask substrate, and good adhesion between the substrate to be processed and the mask substrate can be ensured.

本発明の蒸着装置は、前記蒸着マスクの開口形成領域の少なくとも一部領域を前記磁気
吸引部で磁気吸引することを特徴とする。本発明によれば、成膜パターンの開口形成領域
を確実に被処理基板に密着させ、被処理基板への成膜精度を確実に且つ一層高めることが
できる。 The vapor deposition apparatus of the present invention is characterized in that at least a partial region of the opening formation region of the vapor deposition mask is magnetically attracted by the magnetic attraction unit. According to the present invention, the opening formation region of the film formation pattern can be securely adhered to the substrate to be processed, and the film formation accuracy on the substrate to be processed can be reliably and further increased.

本発明の蒸着装置は、前記押圧部の押圧による前記被処理基板に対する荷重負荷領域を
、前記蒸着マスクの開口形成領域と重ならない領域とすることを特徴とする。本発明によ
れば、押圧による荷重負荷で蒸着マスクの開口に変形や損傷を生ずることを防止でき、蒸
着マスクの成膜精度を維持することができる。 The vapor deposition apparatus according to the present invention is characterized in that a load-loading area on the substrate to be processed by pressing of the pressing portion is an area that does not overlap with an opening forming area of the vapor deposition mask. ADVANTAGE OF THE INVENTION According to this invention, it can prevent that a deformation | transformation and damage arise in the opening of a vapor deposition mask with the load load by press, and the film-forming precision of a vapor deposition mask can be maintained.

本発明の蒸着装置は、前記被処理基板に対する荷重負荷領域を、前記マスク基板の外枠
と重なる領域とすることを特徴とする。本発明によれば、押圧による荷重負荷でマスク基
板の開口に変形や損傷が生ずることを防止でき、マスク基板の成膜精度を維持することが
できる。 The vapor deposition apparatus of the present invention is characterized in that a load-loading region for the substrate to be processed is a region overlapping with an outer frame of the mask substrate. According to the present invention, it is possible to prevent the opening of the mask substrate from being deformed or damaged by a load applied by pressing, and it is possible to maintain the deposition accuracy of the mask substrate.

本発明の蒸着装置は、前記押圧部で前記被処理基板を押圧した状態で、前記磁気吸引部
で前記蒸着マスクを磁気吸引することを特徴とする。本発明によれば、押圧部の押圧によ
り、被処理基板と蒸着マスクとの弛みを減じつつ、被処理基板と蒸着マスクの位置合わせ
した位置を正確に維持し、その状態のまま磁気吸引して被処理基板と蒸着マスクを密着す
ることが可能となり、被処理基板の成膜精度をより一層高めることができる。 The vapor deposition apparatus of the present invention is characterized in that the vapor deposition mask is magnetically attracted by the magnetic attraction unit in a state where the substrate to be processed is pressed by the pressing unit. According to the present invention, the pressed position of the pressing portion reduces the slack between the substrate to be processed and the vapor deposition mask while accurately maintaining the aligned position of the substrate to be processed and the vapor deposition mask, and magnetically attracts the substrate in that state. It becomes possible to adhere | attach a to-be-processed substrate and a vapor deposition mask, and can further improve the film-forming precision of a to-be-processed substrate.

本発明の蒸着装置は、前記磁気吸引部を電磁石として前記押圧部に一体的に設け、前記
押圧部で前記被処理基板を押圧した状態で、前記電磁石の磁力を発生させて前記蒸着マス
クを磁気吸引することを特徴とする。本発明によれば、押圧と磁気吸引を１つの部材で行
うことが可能となり、装置構成の簡略化、製造コストの低減を図ることができる。 In the vapor deposition apparatus of the present invention, the magnetic attraction unit is integrally provided in the pressing unit as an electromagnet, and the magnetic force of the electromagnet is generated in a state where the substrate to be processed is pressed by the pressing unit to magnetize the vapor deposition mask. It is characterized by sucking. According to the present invention, it is possible to perform pressing and magnetic attraction with a single member, so that the configuration of the apparatus can be simplified and the manufacturing cost can be reduced.

本発明の蒸着装置は、前記磁気吸引部を永久磁石として前記押圧部と別体で設け、前記
押圧部で前記被処理基板を押圧した状態で、前記永久磁石を前記被処理基板に近付けて前
記蒸着マスクを磁気吸引することを特徴とする。本発明によれば、永久磁石を近付けるだ
けで蒸着マスクを磁気吸引することが可能となり、装置構成の簡略化、製造コストの低減
を図ることができる。 In the vapor deposition apparatus of the present invention, the magnetic attraction unit is provided as a permanent magnet separately from the pressing unit, and the permanent magnet is brought close to the substrate to be processed in a state where the substrate to be processed is pressed by the pressing unit. The vapor deposition mask is magnetically attracted. According to the present invention, it is possible to magnetically attract the vapor deposition mask only by bringing the permanent magnet close to it, and it is possible to simplify the apparatus configuration and reduce the manufacturing cost.

また、本発明の蒸着方法は、成膜パターンの開口を有すると共に磁性を有する蒸着マス
クを、被処理基板の被成膜面側に重ねて配置する工程と、前記被処理基板の被成膜面と反
対側から、前記被処理基板を前記蒸着マスクに向けて押圧すると共に、前記被処理基板の
被成膜面と反対側から、少なくとも前記押圧による荷重負荷領域と重なる領域以外の領域
で、前記蒸着マスクを前記被処理基板に向けて磁気吸引する工程と、前記被処理基板の被
成膜面側に前記成膜パターンの開口を介して蒸着する工程とを備えることを特徴とする。
本発明によれば、被処理基板１０とマスク基板５１の双方を互いに倣うように変形させて
、押圧の荷重負荷領域と重なる領域とそれ以外の領域の双方で、被処理基板と蒸着マスク
の良好な密着性を確保することが可能であり、被処理基板への成膜精度を高めることがで
きる。 Further, the vapor deposition method of the present invention includes a step of placing a vapor deposition mask having an opening of a film formation pattern and magnetism on the film formation surface side of the substrate to be processed, and a film formation surface of the substrate to be processed. From the opposite side, the substrate to be processed is pressed toward the vapor deposition mask, and from the side opposite to the film formation surface of the substrate to be processed, at least in a region other than the region overlapping the load load region due to the pressing, And a step of magnetically attracting a deposition mask toward the substrate to be processed, and a step of depositing on the deposition surface side of the substrate to be processed through an opening of the deposition pattern.
According to the present invention, both the substrate to be processed 10 and the mask substrate 51 are deformed so as to follow each other, and the substrate to be processed and the vapor deposition mask are excellent in both the region overlapping with the pressure load region and the other region. High adhesion can be ensured, and the deposition accuracy on the substrate to be processed can be improved.

また、本発明の電気光学装置は、本発明の蒸着装置で前記被処理基板に薄膜を蒸着され
た薄膜構造を備えることを特徴とする。本発明によれば、電気光学装置の薄膜構造の成膜
精度を高め、電気光学装置を高品質化することができる。 According to another aspect of the present invention, there is provided an electro-optical device having a thin film structure in which a thin film is deposited on the substrate to be processed by the vapor deposition apparatus of the present invention. According to the present invention, the film forming accuracy of the thin film structure of the electro-optical device can be improved, and the quality of the electro-optical device can be improved.

また、本発明の電子機器は、本発明の蒸着装置で前記被処理基板に薄膜を蒸着された薄
膜構造を有する装置を備えることを特徴とする。本発明によれば、電子機器の装置の薄膜
構造の成膜精度を高め、電子機器を高品質化することができる。 In addition, an electronic apparatus according to the present invention includes an apparatus having a thin film structure in which a thin film is deposited on the substrate to be processed by the vapor deposition apparatus according to the present invention. ADVANTAGE OF THE INVENTION According to this invention, the film-forming precision of the thin film structure of the apparatus of an electronic device can be improved, and an electronic device can be improved in quality.

本発明の実施形態について図面を参照して説明する。 Embodiments of the present invention will be described with reference to the drawings.

〔第１実施形態〕
図１は第１実施形態の蒸着装置を示す模式断面図、図２は押圧板、被処理基板及び蒸着
マスクの位置関係を示す斜視図、図３は押圧板の押圧及び磁気吸引を説明する縦断説明図
、図４は蒸着マスクの平面説明図である。第１実施形態の蒸着装置１は、図１に示すよう
に、蒸着槽２と、蒸着槽２内を減圧して真空雰囲気とする真空ポンプ３と、蒸着粒子を供
給する蒸着源４と、成膜パターンの開口を有すると共に磁性を有する蒸着マスク５と、被
処理基板１０及び蒸着マスク５を水平に保持するホルダ６と、密着機構７とを備える。蒸
着装置１は、蒸着槽２内を真空ポンプ３で真空排気し、蒸着源４の蒸着物質を蒸発して蒸
着粒子を被処理基板１０の表面に蒸着する真空蒸着装置である。 [First Embodiment]
1 is a schematic cross-sectional view showing a vapor deposition apparatus according to the first embodiment, FIG. 2 is a perspective view showing a positional relationship between a pressure plate, a substrate to be treated, and a vapor deposition mask, and FIG. 3 is a longitudinal section for explaining pressure and magnetic attraction of the pressure plate. Explanatory drawing and FIG. 4 are plane | planar explanatory drawings of a vapor deposition mask. As shown in FIG. 1, the vapor deposition apparatus 1 of the first embodiment includes a vapor deposition tank 2, a vacuum pump 3 that depressurizes the vapor deposition tank 2 to form a vacuum atmosphere, a vapor deposition source 4 that supplies vapor deposition particles, and a component. A vapor deposition mask 5 having an opening of a film pattern and having magnetism, a substrate 6 to be processed and a vapor deposition mask 5 that holds the vapor deposition mask 5 horizontally, and an adhesion mechanism 7 are provided. The vapor deposition apparatus 1 is a vacuum vapor deposition apparatus that evacuates the inside of the vapor deposition tank 2 with a vacuum pump 3, evaporates the vapor deposition material of the vapor deposition source 4, and deposits vapor deposition particles on the surface of the substrate 10 to be processed.

蒸着源４は、蒸着槽２内の底面側に配置され、抵抗加熱又は電子ビームで加熱され、図
１の点線の如く、収容した蒸着物質を蒸着粒子として蒸発する。ホルダ６は、蒸着槽２内
の中央より若干上側の位置に設けられており、蒸着マスク５の下面の相対向する両端部分
を支持するように対向して設けられ、被処理基板１０及び被処理基板１０の被成膜面側に
重ねて配置される蒸着マスク５を保持する。本例のホルダ６は、後述する長方形のマスク
基板５１の長手方向に沿う蒸着マスク５の両端部分を支持するように対向して設けられて
いる。 The vapor deposition source 4 is disposed on the bottom surface side in the vapor deposition tank 2 and heated by resistance heating or electron beam, and the contained vapor deposition material is evaporated as vapor deposition particles as shown by the dotted line in FIG. The holder 6 is provided at a position slightly above the center in the vapor deposition tank 2, and is provided so as to support both opposite end portions of the lower surface of the vapor deposition mask 5. The vapor deposition mask 5 that is placed on the deposition surface side of the substrate 10 is held. The holder 6 of this example is provided so as to face both ends of the vapor deposition mask 5 along the longitudinal direction of a rectangular mask substrate 51 described later.

蒸着マスク５は、図２〜図４に示すように、磁性を有する複数の長方形のマスク基板５
１と、各マスク基板５１を保持するベース基板５２とで構成され、各マスク基板５１がア
ラインメントされて紫外線硬化型接着剤等によりベース基板５２に接合されている。マス
ク基板５１には、成膜パターンに対応する長孔状の開口５１１の複数が所定間隔で平行に
形成され、開口５１１の形成領域の周りに外枠５１２が設けられている。ベース基板５２
には、マスク基板５１に対応する長方形の開口が複数設けられ、アラインメントマーク（
図示省略）で位置合わせして前記開口を塞ぐように各マスク基板５１が配置され、固定さ
れている。前記固定されたマスク基板５１はベース基板５２の上面から被処理基板１０側
に段差状に突出している。更に、ベース基板５２には蒸着マスク５の位置合わせを行うた
めのアラインメントマーク５２１が設けられている。 The vapor deposition mask 5 includes a plurality of rectangular mask substrates 5 having magnetism, as shown in FIGS.
1 and a base substrate 52 that holds each mask substrate 51. Each mask substrate 51 is aligned and bonded to the base substrate 52 by an ultraviolet curable adhesive or the like. In the mask substrate 51, a plurality of long hole-shaped openings 511 corresponding to the film formation pattern are formed in parallel at predetermined intervals, and an outer frame 512 is provided around the area where the openings 511 are formed. Base substrate 52
Are provided with a plurality of rectangular openings corresponding to the mask substrate 51, and alignment marks (
Each mask substrate 51 is arranged and fixed so as to close the opening by aligning in (not shown). The fixed mask substrate 51 protrudes from the upper surface of the base substrate 52 in a step shape toward the substrate 10 to be processed. Furthermore, the base substrate 52 is provided with an alignment mark 521 for aligning the vapor deposition mask 5.

マスク基板５１は、図５に示すように、開口５１１を有するシリコン基板５１ａに所定
パターンの磁性体膜５１ｄを形成して構成される。マスク基板５１を製造する際には、先
ず、図５（ａ）に示すように、面方位（１００）を有する単結晶シリコンや、面方位（１
１０）を有する単結晶シリコン等のシリコン基板５１ａに、フォトリソグラフィ技術、ウ
エットエッチング、ドライエッチングなどを用いて開口５１１を形成する。次いで、図５
（ｂ）に示すように、シリコン基板５１ａに酸化シリコン膜等の耐アルカリ膜５１ｂを成
膜する。耐アルカリ膜５１ｂは、ジンケート処理や無電解メッキ等に用いられるアルカリ
性液に耐性を有する膜であり、アルカリ性液への浸漬によるシリコン基板５１ａの溶解を
防ぐために成膜される。次いで、図５（ｃ）に示すように、耐アルカリ膜５１ｂが形成さ
れたシリコン基板５１ａの開口５１１の形成領域の裏面側に、マスクスパッター法を用い
て、所定パターンを有する合金膜の下地膜５１ｃを形成する。下地膜５１ｃは、後工程の
無電解メッキ処理で磁性体膜５１ｄを析出させるための下地となる膜であり、Ｎｉ合金や
Ｃｕ合金を用いることが好ましい。次いで、図５（ｄ）に示すように、無電解メッキ処理
で下地膜５１ｃ上に磁性体膜５１ｄを形成し、マスク基板５１となる。磁性体膜５１ｄは
、Ｃｏ、Ｎｉ、Ｆｅ等を含んだ強磁性体で形成された膜であり、具体的にはＣｏ−Ｎｉ−
Ｐ膜やＮｉ−Ｆｅ−Ｐ膜等である。 As shown in FIG. 5, the mask substrate 51 is configured by forming a magnetic film 51 d having a predetermined pattern on a silicon substrate 51 a having openings 511. When manufacturing the mask substrate 51, first, as shown in FIG. 5A, single crystal silicon having a plane orientation (100) or a plane orientation (1
10), an opening 511 is formed in the silicon substrate 51a such as single crystal silicon using a photolithography technique, wet etching, dry etching, or the like. Next, FIG.
As shown in FIG. 6B, an alkali resistant film 51b such as a silicon oxide film is formed on the silicon substrate 51a. The alkali resistant film 51b is a film that is resistant to an alkaline liquid used for zincate treatment, electroless plating, and the like, and is formed to prevent dissolution of the silicon substrate 51a due to immersion in the alkaline liquid. Next, as shown in FIG. 5C, an underlayer film of an alloy film having a predetermined pattern is formed on the back surface side of the formation region of the opening 511 of the silicon substrate 51a on which the alkali resistant film 51b is formed by using a mask sputtering method. 51c is formed. The base film 51c is a film that serves as a base for depositing the magnetic film 51d in an electroless plating process in a later step, and it is preferable to use a Ni alloy or a Cu alloy. Next, as shown in FIG. 5 (d), a magnetic film 51 d is formed on the base film 51 c by electroless plating, thereby forming a mask substrate 51. The magnetic film 51d is a film formed of a ferromagnetic material including Co, Ni, Fe, and the like, and specifically, Co—Ni—.
P film, Ni-Fe-P film or the like.

ベース基板５２は、マスク基板５１の構成材料の熱膨張係数と同一又は近い熱膨張係数
の材料で構成することが好ましく、これにより、ベース基板５２とマスク基板５１との熱
膨張量の違いによる歪み又は撓みの発生を抑えることができる。本例では、マスク基板５
１をシリコン基板５１ａで構成するので、シリコンの熱膨張係数と同一又は近い熱膨張係
数の材料で構成することが好ましく、例えば無アルカリガラス、ホウケイ酸ガラス、ソー
ダガラス、石英等の透明基板とするとよい。 The base substrate 52 is preferably made of a material having a thermal expansion coefficient that is the same as or close to the thermal expansion coefficient of the constituent material of the mask substrate 51, whereby distortion due to a difference in thermal expansion amount between the base substrate 52 and the mask substrate 51. Or generation | occurrence | production of bending can be suppressed. In this example, the mask substrate 5
1 is composed of a silicon substrate 51a, and is preferably composed of a material having a thermal expansion coefficient that is the same as or close to that of silicon. For example, a transparent substrate such as non-alkali glass, borosilicate glass, soda glass, or quartz is used. Good.

密着機構７は、図１に示すように、蒸着槽２内の上面側に配置され、ホルダ６に載置さ
れた被処理基板１０の被成膜面と反対側である上側に配置される。密着機構７は、図１〜
図３に示すように、被処理基板１０を蒸着マスク５に向けて押圧する押圧部と、蒸着マス
ク５を被処理基板１０に向けて磁気吸引する磁気吸引部とが一体となったものとして、永
久磁石で形成された複数の押圧板７１を有する。押圧板７１は、マスク基板５１と平面視
形状及びサイズが略同一であり、ワイヤーなど上下に伸縮可能な支持部材７２を介して、
伸縮調整部７３で支持されている。各押圧板７１は、伸縮調整部７３による各支持部材７
２の伸長で被処理基板１０の上面に一括してローディングされ、又、伸縮調整部７３によ
る各支持部材７２の短縮で被処理基板１０の上面から一括してアンローディングされる。 As shown in FIG. 1, the adhesion mechanism 7 is disposed on the upper surface side in the vapor deposition tank 2 and is disposed on the upper side opposite to the film formation surface of the substrate 10 to be processed placed on the holder 6. The close contact mechanism 7 is shown in FIGS.
As shown in FIG. 3, it is assumed that the pressing unit that presses the substrate 10 to be processed toward the deposition mask 5 and the magnetic suction unit that magnetically attracts the deposition mask 5 toward the substrate 10 to be processed are integrated. It has a plurality of pressing plates 71 formed of permanent magnets. The pressing plate 71 has substantially the same shape and size in plan view as the mask substrate 51, and via a support member 72 that can be expanded and contracted vertically, such as a wire,
It is supported by the expansion / contraction adjustment unit 73. Each pressing plate 71 corresponds to each support member 7 by the expansion / contraction adjustment unit 73.
When the support member 72 is shortened by the expansion / contraction adjustment unit 73, the substrate is unloaded from the upper surface of the substrate 10 as a whole.

ローディングされた押圧板７１は、マスク基板５１の全体と重なる押圧板配置領域１１
で被処理基板１０の上面に当接し、錘となって自重を被処理基板１０に負荷し、上側の被
処理基板１０を下側の蒸着マスク５に向けて押圧する。前記ローディング時には、支持部
材７２の押圧板７１に対する支持力（張力）がゼロになるまで支持部材７２を伸長し、押
圧板７２の自重の全部が被処理基板１０の上面に負荷される。更に、永久磁石である押圧
板７１は、当接する被処理基板１０を挟んで、磁性を有する下側の蒸着マスク５、即ち磁
性体膜５１ｄを有するマスク基板５１を上側の被処理基板１０に向けて磁気吸引する。 The loaded pressing plate 71 has a pressing plate arrangement region 11 that overlaps the entire mask substrate 51.
Then, it comes into contact with the upper surface of the substrate to be processed 10, becomes a weight, loads its own weight on the substrate 10 to be processed, and presses the upper substrate 10 to be processed toward the lower deposition mask 5. At the time of loading, the support member 72 is extended until the support force (tension) of the support member 72 against the pressing plate 71 becomes zero, and the entire weight of the pressing plate 72 is loaded on the upper surface of the substrate 10 to be processed. Further, the pressing plate 71 which is a permanent magnet has the lower deposition mask 5 having magnetism, that is, the mask substrate 51 having the magnetic film 51 d facing the upper substrate to be processed 10, with the substrate to be processed 10 in contact therewith. And magnetically attract.

第１実施形態の蒸着装置１で蒸着する際には、被処理基板１０の被成膜面側を下側にし
て、前記被成膜面側に蒸着マスク５を重ねて配置する。この状態で蒸着マスク５のマスク
基板５１の無いベース基板５２の部分をホルダ６に載置し、被処理基板１０と蒸着マスク
５をホルダ６で水平に保持する。この際、ホルダ６で保持された蒸着マスク５は自重によ
り中央が凹んだ状態に撓み、マスク基板５１に撓みや傾きが生ずる。 When vapor deposition is performed by the vapor deposition apparatus 1 of the first embodiment, the vapor deposition mask 5 is placed on the film formation surface side with the film formation surface side of the substrate to be processed 10 facing down. In this state, the portion of the base substrate 52 without the mask substrate 51 of the vapor deposition mask 5 is placed on the holder 6, and the substrate to be processed 10 and the vapor deposition mask 5 are held horizontally by the holder 6. At this time, the vapor deposition mask 5 held by the holder 6 is bent in a state where the center is recessed by its own weight, and the mask substrate 51 is bent or tilted.

そして、伸縮調整部７３で支持部材７２を伸長して各押圧板７１を下降し、各押圧板７
１を押圧板配置領域１１に配置して被処理基板１０の上面に当接し、押圧板７１の自重を
被処理基板１０に負荷して被処理基板１０を蒸着マスク５に向けて押圧する。前記押圧に
より、図３の太線矢印の如く、押圧板７１の長手方向に沿う両端部分で被処理基板１０に
荷重Ｇが負荷され、被処理基板１０の各押圧板７１の長手方向に沿う両端縁及びその近傍
領域が荷重負荷領域ＧＲとなる（図２参照）。荷重負荷領域ＧＲは、マスク基板５１の外
枠５１２と重なる領域で、開口５１１の形成領域と重ならない領域である。そして、荷重
Ｇは、マスク基板５１の長手方向に沿う両端部分の荷重受領域Ｒで受けられ、被処理基板
１０がマスク基板５１の傾きや撓みに倣うように変形する。 Then, the support member 72 is extended by the expansion / contraction adjustment unit 73 to lower each pressing plate 71 and each pressing plate 7.
1 is placed in the pressing plate arrangement region 11 and is brought into contact with the upper surface of the substrate 10 to be processed, and the weight of the pressing plate 71 is loaded on the substrate 10 to be processed and pressed against the deposition mask 5. Due to the pressing, a load G is applied to the substrate to be processed 10 at both end portions along the longitudinal direction of the pressing plate 71 as shown by thick arrows in FIG. 3, and both end edges along the longitudinal direction of each pressing plate 71 of the processing substrate 10 And the area | region of the vicinity becomes load load area | region GR (refer FIG. 2). The load application region GR is a region that overlaps the outer frame 512 of the mask substrate 51 and is a region that does not overlap the formation region of the opening 511. The load G is received by the load receiving regions R at both end portions along the longitudinal direction of the mask substrate 51, and the substrate to be processed 10 is deformed so as to follow the inclination and the bending of the mask substrate 51.

前記押圧だけでは、前記両端の荷重負荷領域ＧＲ・ＧＲと重なる領域以外の領域、即ち
前記両端の荷重負荷領域ＧＲ・ＧＲ間の領域と重なる領域で、被処理基板１０とマスク基
板５１との間に隙間が残る。しかしながら、本実施形態では、押圧だけではなく、前記両
端の荷重負荷領域ＧＲ・ＧＲ及びその間の領域と重なる領域、換言すればマスク基板５１
の開口５１１の形成領域及び外枠５１２の領域の全体に亘り、永久磁石の押圧板７１によ
りマスク基板５１を被処理基板１０に向けて磁気吸引している。前記磁気吸引により、前
記隙間の発生を防止し、マスク基板５１を被処理基板１０に倣うように変形することがで
きる。尚、本実施形態では永久磁石の押圧板７１を被処理基板１０に近付けて前記押圧及
び磁気吸引を行っていることから、押圧と磁気吸引は同時か、或いは押圧より磁気吸引が
僅かに早く行われる。 Between the substrate 10 to be processed and the mask substrate 51 in the region other than the region overlapping the load load regions GR and GR at both ends, that is, the region overlapping the regions between the load load regions GR and GR at both ends only by the pressing. Leave a gap. However, in this embodiment, not only the pressing, but also the load-loading regions GR and GR at both ends and the region overlapping with the region between them, in other words, the mask substrate 51
The mask substrate 51 is magnetically attracted toward the substrate 10 to be processed by the permanent magnet pressing plate 71 over the entire region where the opening 511 is formed and the region of the outer frame 512. Due to the magnetic attraction, the generation of the gap can be prevented, and the mask substrate 51 can be deformed to follow the substrate 10 to be processed. In this embodiment, the pressing plate 71 of the permanent magnet is brought close to the substrate 10 to perform the pressing and magnetic attraction, so that the pressing and the magnetic attraction are performed at the same time or the magnetic attraction is performed slightly earlier than the pressing. Is called.

第１実施形態の蒸着装置１は、被処理基板１０とマスク基板５１の双方を互いに倣うよ
うに変形させて、押圧の荷重負荷領域ＧＲと重なる領域とそれ以外の領域の双方で、被処
理基板１０とマスク基板５１の良好な密着性を確保することが可能であり、被処理基板１
０への成膜精度を高めることができる。特に、マスク基板５１の開口５１１の形成領域を
磁気吸引していることから、成膜パターンの開口５１１の形成領域を確実に被処理基板１
０に密着することができ、成膜精度を確実に且つ一層高めることができる。また、押圧の
荷重負荷領域ＧＲがマスク基板５１の開口５１１の形成領域ではなく外枠５１２と重なる
領域であるから、押圧による荷重負荷でマスク基板５１の開口５１１に変形や損傷が生ず
ることを防止でき、マスク基板５１の成膜精度を維持することができる。 The vapor deposition apparatus 1 according to the first embodiment deforms both the substrate 10 to be processed and the mask substrate 51 so as to follow each other, and the substrate to be processed in both the region overlapping with the pressing load load region GR and the other region. 10 and the mask substrate 51 can be secured with good adhesion.
The film formation accuracy to 0 can be increased. In particular, since the formation region of the opening 511 of the mask substrate 51 is magnetically attracted, the formation region of the opening 511 of the film formation pattern can be surely formed.
The film formation accuracy can be reliably and further increased. In addition, since the load area GR of the pressure is not the area where the opening 511 of the mask substrate 51 is formed but overlaps with the outer frame 512, it is possible to prevent the opening 511 of the mask substrate 51 from being deformed or damaged by the load applied by the pressure. In addition, the deposition accuracy of the mask substrate 51 can be maintained.

尚、上記蒸着装置１では、複数のマスク基板５１をベース基板５２で支持する蒸着マス
ク５を用いる場合について説明したが、本発明の蒸着装置で用いられる蒸着マスクには、
単体のマスク基板５１に相当する構成の蒸着マスクも含まれ、後述の実施形態でも同様で
ある。例えば図６に示すように、押圧板７１と同一構成の押圧板７４で押圧し、磁気吸引
する構成としてもよい。本例では、被処理基板１０の被成膜面側に平面視長方形の蒸着マ
スク５０を重ねて配置する。この際、蒸着マスク５０は被処理基板１０より大きい外形を
有し、その外枠は被処理基板１０より外方に突出する。そして、蒸着マスク５０の長手方
向に沿う両端部分の前記突出部分をホルダ６に載置し、蒸着マスク５０及び被処理基板１
０をホルダ６で保持する。 In the above-described vapor deposition apparatus 1, the case where the vapor deposition mask 5 that supports the plurality of mask substrates 51 with the base substrate 52 has been described, but the vapor deposition mask used in the vapor deposition apparatus of the present invention includes:
A vapor deposition mask having a configuration corresponding to the single mask substrate 51 is also included, and the same applies to the embodiments described later. For example, as shown in FIG. 6, a pressing plate 74 having the same configuration as the pressing plate 71 may be pressed and magnetically attracted. In this example, a vapor deposition mask 50 having a rectangular shape in plan view is arranged on the film formation surface side of the substrate 10 to be processed. At this time, the vapor deposition mask 50 has an outer shape larger than that of the substrate to be processed 10, and its outer frame protrudes outward from the substrate to be processed 10. And the said protrusion part of the both ends along the longitudinal direction of the vapor deposition mask 50 is mounted in the holder 6, and the vapor deposition mask 50 and the to-be-processed substrate 1 are mounted.
0 is held by the holder 6.

更に、被処理基板１０と平面視形状及びサイズが略同一の押圧板７４で、被処理基板１
０を蒸着マスク５０に向けて押圧する。押圧時には、図６の被処理基板１０の両端部分で
荷重Ｇが負荷され、ホルダ６と重ならず且つ蒸着マスク５０の外枠と重なる、被処理基板
１０の押圧板７４の長手方向に沿う両端縁及びその近傍領域が荷重負荷領域ＧＲとなる。
また、永久磁石の押圧板７４は、前記両端の荷重負荷領域ＧＲ・ＧＲ及びその間の領域と
重なる領域、換言すれば蒸着マスク５０の開口形成領域及び被処理基板１０に重なる蒸着
マスク５０の外枠の領域に亘り、蒸着マスク５０を被処理基板１０に向けて磁気吸引する
。前記押圧と磁気吸引により、略中央が撓む蒸着マスク５０と被処理基板５０とが正確に
倣うように変形することができる。本例の蒸着マスク５０の場合にも、被処理基板１０と
蒸着マスク５０の良好な密着性を確保できる等、上記マスク基板５１で構成される蒸着マ
スク５の場合と同様の効果が得られる。 Furthermore, the substrate 1 to be processed is a pressing plate 74 having substantially the same shape and size as the substrate 10 to be processed.
0 is pressed toward the vapor deposition mask 50. At the time of pressing, both ends along the longitudinal direction of the pressing plate 74 of the substrate to be processed 10 are loaded with the load G at both ends of the substrate 10 to be processed in FIG. 6 and do not overlap the holder 6 but overlap the outer frame of the vapor deposition mask 50. The edge and its vicinity region become the load application region GR.
The permanent magnet pressing plate 74 overlaps the load-loading areas GR and GR at both ends and the area between them, in other words, the opening forming area of the evaporation mask 50 and the outer frame of the evaporation mask 50 overlapping the substrate 10 to be processed. The deposition mask 50 is magnetically attracted toward the substrate 10 to be processed over the region. By the pressing and magnetic attraction, the deposition mask 50 and the substrate 50 to be processed can be deformed so as to accurately follow the center. Also in the case of the vapor deposition mask 50 of this example, the same effect as the case of the vapor deposition mask 5 comprised by the said mask board | substrate 51 is acquired, such as ensuring the favorable adhesiveness of the to-be-processed substrate 10 and the vapor deposition mask 50.

〔第２実施形態〕
図７は第２実施形態の蒸着装置の押圧板、被処理基板及び蒸着マスクの位置関係を示す
斜視図、図８は蒸着マスクの平面説明図である。第２実施形態の蒸着装置１は、第１実施
形態の永久磁石の押圧板７１に代え、電磁石７６を内装した押圧板７５を用いるものであ
り、以下では第１実施形態と相違する箇所のみ説明する。 [Second Embodiment]
FIG. 7 is a perspective view showing the positional relationship between the pressing plate, the substrate to be processed, and the vapor deposition mask of the vapor deposition apparatus according to the second embodiment, and FIG. 8 is a plane explanatory view of the vapor deposition mask. The vapor deposition apparatus 1 of 2nd Embodiment replaces with the press plate 71 of the permanent magnet of 1st Embodiment, and uses the press plate 75 which comprised the electromagnet 76, and demonstrates only the location different from 1st Embodiment below. To do.

押圧板７５は、被処理基板１０を蒸着マスク５に向けて押圧する押圧部と、蒸着マスク
５を被処理基板１０に向けて磁気吸引する磁気吸引部とが一体となったものである。押圧
板７５は、図７に示すように、押圧板７１と平面視形状及びサイズが同一の長方形であり
、幅方向の中央位置に長手方向に沿うように細長の電磁石７６が内装されている。電磁石
７６は、マスク基板５１の開口５１１の形成領域の幅より幅狭で、開口５１１の形成領域
の幅方向中央に対応する位置に配置されている。電磁石７６には、支持部材７２に沿って
設けられる電路（図示省略）を介して電流が供給され、制御部（図示省略）の切替制御で
前記電路を介して電流が供給／停止され、電磁石７６の磁力が発生／停止する。 The pressing plate 75 is formed by integrating a pressing portion that presses the substrate 10 to be processed toward the deposition mask 5 and a magnetic suction portion that magnetically attracts the deposition mask 5 toward the processing substrate 10. As shown in FIG. 7, the pressing plate 75 is a rectangle having the same shape and size in plan view as the pressing plate 71, and an elongate electromagnet 76 is housed along the longitudinal direction at the center position in the width direction. The electromagnet 76 is arranged at a position that is narrower than the width of the formation region of the opening 511 of the mask substrate 51 and corresponds to the center in the width direction of the formation region of the opening 511. An electric current is supplied to the electromagnet 76 via an electric path (not shown) provided along the support member 72, and current is supplied / stopped via the electric path by switching control of a control unit (not shown). The magnetic force is generated / stopped.

第２実施形態の蒸着装置１で蒸着する際には、第１実施形態と同様に被処理基板１０と
蒸着マスク５を配置し、ホルダ６で保持する。次いで、電磁石７６の磁力を停止した状態
で、伸縮調整部７３で支持部材７２を伸長して各押圧板７５を下降し、各押圧板７５を押
圧板配置領域１１に配置して被処理基板１０の上面に当接し、錘となる押圧板７５の自重
を被処理基板１０に負荷して被処理基板１０を蒸着マスク５に向けて押圧する。前記押圧
により、図３の場合と同様に荷重Ｇが負荷され、被処理基板１０の各押圧板７５の長手方
向に沿う両端縁及びその近傍領域が荷重負荷領域ＧＲとなる。荷重負荷領域ＧＲは、マス
ク基板５１の外枠５１２と重なる領域で、開口５１１の形成領域と重ならない領域である
。そして、荷重Ｇは、マスク基板５１の長手方向に沿う両端部分の荷重受領域Ｒで受けら
れ（図８参照）、被処理基板１０がマスク基板５１の傾きや撓みに倣うように変形する。 When vapor deposition is performed by the vapor deposition apparatus 1 of the second embodiment, the substrate 10 to be processed and the vapor deposition mask 5 are arranged and held by the holder 6 as in the first embodiment. Next, in a state where the magnetic force of the electromagnet 76 is stopped, the support member 72 is extended by the expansion / contraction adjustment unit 73 to lower each pressing plate 75, and each pressing plate 75 is disposed in the pressing plate arrangement region 11 to be processed substrate 10. The weight of the pressure plate 75 serving as a weight is loaded on the substrate 10 to be processed and pressed against the vapor deposition mask 5. Due to the pressing, a load G is applied in the same manner as in FIG. 3, and both end edges along the longitudinal direction of each pressing plate 75 of the substrate to be processed 10 and the vicinity thereof become the load loading region GR. The load application region GR is a region that overlaps the outer frame 512 of the mask substrate 51 and is a region that does not overlap the formation region of the opening 511. Then, the load G is received by the load receiving regions R at both end portions along the longitudinal direction of the mask substrate 51 (see FIG. 8), and the substrate 10 to be processed is deformed so as to follow the inclination and bending of the mask substrate 51.

その後、前記押圧した状態で、電磁石７６の磁力を発生させ、前記両端の荷重負荷領域
ＧＲ・ＧＲ間の中央に位置する所定領域と重なる領域、換言すればマスク基板５１の開口
５１１の形成領域の一部領域及び外枠５１２の一部領域とからなる磁気吸引領域Ｍで、マ
スク基板５１を被処理基板１０に向けて磁気吸引する。前記磁気吸引により、前記両端の
荷重負荷領域ＧＲ・ＧＲ間の領域と重なる領域でマスク基板５１と被処理基板１０との間
に隙間が発生することを防止し、マスク基板５１を被処理基板１０に倣うように変形する
ことができる。 After that, the magnetic force of the electromagnet 76 is generated in the pressed state, and overlaps with a predetermined region located in the center between the load load regions GR and GR at both ends, in other words, the region where the opening 511 of the mask substrate 51 is formed. The mask substrate 51 is magnetically attracted toward the substrate to be processed 10 in the magnetic attraction region M including the partial region and the partial region of the outer frame 512. The magnetic attraction prevents a gap from being generated between the mask substrate 51 and the substrate to be processed 10 in a region overlapping the region between the load load regions GR and GR at both ends. It can be deformed to follow.

第２実施形態の蒸着装置１は、第１実施形態と同様の効果が得られる。更に、押圧板７
５で被処理基板１０を押圧した状態で、電磁石７６でマスク基板５１を磁気吸引すること
により、押圧で、被処理基板１０とマスク基板５１との弛みを減じつつ、被処理基板１０
とマスク基板５１の位置合わせした位置を正確に維持し、その状態のまま磁気吸引して被
処理基板１０とマスク基板５１を密着することが可能となり、被処理基板１０の成膜精度
をより一層高めることができる。また、電磁石７６が一体化された押圧板７５で押圧と磁
気吸引の双方で行うことが可能であり、装置構成の簡略化、製造コストの低減を図ること
ができる。 The vapor deposition apparatus 1 of 2nd Embodiment can acquire the effect similar to 1st Embodiment. Furthermore, the pressing plate 7
5, the mask substrate 51 is magnetically attracted by the electromagnet 76 in a state where the substrate 10 to be processed is pressed, thereby reducing the looseness between the substrate 10 to be processed and the mask substrate 51 by pressing.
The mask substrate 51 and the mask substrate 51 can be accurately maintained, and the target substrate 10 and the mask substrate 51 can be brought into close contact with each other by magnetic attraction so that the film forming accuracy of the target substrate 10 is further increased. Can be increased. Further, it is possible to perform both pressing and magnetic attraction with the pressing plate 75 in which the electromagnet 76 is integrated, so that the apparatus configuration can be simplified and the manufacturing cost can be reduced.

〔第３実施形態〕
図９は第３実施形態の蒸着装置を示す模式断面図、図１０は押圧板、磁石体、被処理基
板及び蒸着マスクの位置関係を示す斜視図、図１１は押圧板の押圧及び磁石体の磁気吸引
を説明する縦断説明図。図１２は蒸着マスクの平面説明図である。第３実施形態の蒸着装
置１は、第１実施形態の永久磁石の押圧板７１で押圧し且つ磁気吸引する密着機構７に代
え、押圧板７７で押圧し、押圧板７７と別体の磁石体７８で磁気吸引する密着機構７０を
用いるものであり、以下では第１実施形態と相違する箇所のみ説明する。 [Third Embodiment]
FIG. 9 is a schematic cross-sectional view showing the vapor deposition apparatus of the third embodiment, FIG. 10 is a perspective view showing the positional relationship between the pressure plate, the magnet body, the substrate to be processed and the vapor deposition mask, and FIG. 11 is the pressure of the pressure plate and the magnet body. Longitudinal explanatory drawing explaining magnetic attraction. FIG. 12 is an explanatory plan view of the vapor deposition mask. The vapor deposition apparatus 1 of 3rd Embodiment is replaced with the press mechanism 77 instead of the contact | adherence mechanism 7 which presses and magnetically attracts with the press plate 71 of the permanent magnet of 1st Embodiment, and separates the press plate 77 and the magnet body. The contact mechanism 70 that magnetically attracts 78 is used, and only the portions that differ from the first embodiment will be described below.

密着機構７０は、図９〜図１１に示すように、ホルダ６に載置された被処理基板１０の
被成膜面と反対側である上側に配置され、被処理基板１０を蒸着マスク５に向けて押圧す
る押圧部として押圧板７７と、蒸着マスク５を被処理基板１０に向けて磁気吸引する磁気
吸引部として磁石体７８とを有する。押圧板７７は、マスク基板５１の長手方向と同一長
さの四角棒状であり、ワイヤーなど上下に伸縮可能な支持部材７２１を介して、伸縮調整
部７３で支持されている。押圧板７７は、マスク基板５１の長手方向に沿う端部に対応す
る位置に配置されている。図１０の前後方向の両外側の押圧板７１はマスク基板５１の外
枠５１２の一端部の上面に対応する位置に配置され、内側の押圧板７１は隣り合うマスク
基板５１・５１の外枠５１２・５１２の対向する両端部の上面に対応する位置に配置され
ている。各押圧板７７は、伸縮調整部７３による各支持部材７２１の伸長で被処理基板１
０の上面に一括してローディングされ、又、伸縮調整部７３による各支持部材７２１の短
縮で被処理基板１０の上面から一括してアンローディングされる。 As shown in FIGS. 9 to 11, the contact mechanism 70 is disposed on the upper side opposite to the film formation surface of the substrate 10 to be processed placed on the holder 6, and the substrate 10 is used as the deposition mask 5. A pressing plate 77 is provided as a pressing part that presses the head, and a magnet body 78 is provided as a magnetic attraction part that magnetically attracts the vapor deposition mask 5 toward the substrate 10 to be processed. The pressing plate 77 is a square bar having the same length as the longitudinal direction of the mask substrate 51, and is supported by the expansion / contraction adjustment unit 73 via a support member 721 that can be vertically expanded and contracted, such as a wire. The pressing plate 77 is disposed at a position corresponding to an end portion along the longitudinal direction of the mask substrate 51. 10 are arranged at positions corresponding to the upper surface of one end of the outer frame 512 of the mask substrate 51, and the inner pressing plate 71 is the outer frame 512 of the adjacent mask substrates 51 and 51. -It is arrange | positioned in the position corresponding to the upper surface of the both ends which 512 faces. Each pressing plate 77 is formed by extending the supporting member 721 by the expansion / contraction adjusting unit 73.
It is loaded all at once on the upper surface of 0, and is unloaded all at once from the upper surface of the substrate 10 to be processed by shortening each support member 721 by the expansion / contraction adjusting unit 73.

磁石体７８は永久磁石であり、マスク基板５１の長手方向と同一長さで且つマスク基板
５１の開口５１１の形成領域より幅狭の長方形平板状である。磁石体７８は、ワイヤーな
ど上下に伸縮可能な支持部材７２２を介して、伸縮調整部７３で支持されている。各磁石
体７８は、伸縮調整部７３による各支持部材７２２の伸長で被処理基板１０の上面に一括
してローディングされ、又、伸縮調整部７３による各支持部材７２２の短縮で被処理基板
１０の上面から一括してアンローディングされる。 The magnet body 78 is a permanent magnet, and has a rectangular flat plate shape having the same length as the longitudinal direction of the mask substrate 51 and a width narrower than a region where the opening 511 of the mask substrate 51 is formed. The magnet body 78 is supported by the expansion / contraction adjustment unit 73 via a support member 722 that can be vertically expanded and contracted, such as a wire. Each magnet body 78 is loaded in a lump on the upper surface of the substrate 10 to be processed by extension of each support member 722 by the expansion / contraction adjustment unit 73, and each of the support members 722 by the expansion / contraction adjustment unit 73 is shortened. Unloading is performed from the top.

ローディングされた押圧板７７は、マスク基板５１の外枠５１２の端部と重なる押圧板
配置領域１２で被処理基板１０の上面に当接し、錘となって自重を被処理基板１０に負荷
し、被処理基板１０を蒸着マスク５に向けて押圧する。前記ローディング時には、支持部
材７２の押圧板７１に対する支持力（張力）がゼロになるまで支持部材７２を伸長し、押
圧板７７の自重の全部が被処理基板１０の上面に負荷される。また、ローディングされた
磁石体７８は、マスク基板５１の開口５１１の形成領域の一部と重なる磁石配置領域１３
で被処理基板１０の上面に当接し、当接する被処理基板１０を挟んで、磁性を有する下側
の蒸着マスク５、即ち磁性体膜５１ｄを有するマスク基板５１を被処理基板１０に向けて
磁気吸引する。 The loaded pressing plate 77 abuts on the upper surface of the substrate to be processed 10 in the pressing plate arrangement region 12 that overlaps the end of the outer frame 512 of the mask substrate 51, and acts as a weight to load its own weight on the substrate to be processed 10. The substrate 10 to be processed is pressed toward the vapor deposition mask 5. At the time of loading, the support member 72 is extended until the support force (tension) of the support member 72 against the pressing plate 71 becomes zero, and the entire weight of the pressing plate 77 is loaded on the upper surface of the substrate 10 to be processed. The loaded magnet body 78 overlaps with a part of the formation region of the opening 511 of the mask substrate 51.
Then, the lower deposition mask 5 having magnetism, that is, the mask substrate 51 having the magnetic film 51d is magnetically directed toward the substrate to be processed 10 with the substrate to be processed 10 in contact with the upper surface of the substrate to be processed. Suction.

第３実施形態の蒸着装置１で蒸着する際には、第１実施形態と同様に被処理基板１０と
蒸着マスク５を配置し、ホルダ６で保持する。次いで、伸縮調整部７３で支持部材７２１
を伸長して各押圧板７７を下降し、各押圧板７７を押圧板配置領域１２に配置して被処理
基板１０の上面に当接し、押圧板７７の自重を被処理基板１０に負荷して被処理基板１０
を蒸着マスク５に向けて押圧する。前記押圧により、図１１の太線矢印の如く、押圧板７
７の長手方向に沿う端部分で被処理基板１０に荷重Ｇが負荷され、被処理基板１０の各押
圧板７７の長手方向に沿う両端縁及びその近傍領域が荷重負荷領域ＧＲとなる（図１０参
照）。図１０の前後方向の両外側に位置する荷重負荷領域ＧＲ以外の荷重負荷領域ＧＲは
、マスク基板５１の外枠５１２と重なる領域で、開口５１１の形成領域と重ならない領域
である。そして、図１１の両外側の荷重Ｇ以外の荷重Ｇが、マスク基板５１の長手方向に
沿う両端部分の荷重受領域Ｒで受けられ（図１２参照）、被処理基板１０がマスク基板５
１の傾きや撓みに倣うように変形する。 When vapor deposition is performed by the vapor deposition apparatus 1 of the third embodiment, the substrate 10 to be processed and the vapor deposition mask 5 are arranged and held by the holder 6 as in the first embodiment. Next, the expansion / contraction adjustment unit 73 supports the support member 721.
The pressure plate 77 is lowered, the pressure plates 77 are arranged in the pressure plate arrangement region 12 and contact the upper surface of the substrate 10 to be processed, and the weight of the pressure plate 77 is loaded on the substrate 10 to be processed. Substrate 10
Is pressed toward the vapor deposition mask 5. By the pressing, the pressing plate 7 as shown by the thick arrow in FIG.
7, a load G is applied to the substrate 10 to be processed at the end portion along the longitudinal direction, and both end edges along the longitudinal direction of the pressing plates 77 of the substrate 10 to be processed and the vicinity thereof become the load load region GR (FIG. 10). reference). A load load region GR other than the load load region GR located on both outer sides in the front-rear direction in FIG. 10 is a region that overlaps with the outer frame 512 of the mask substrate 51 and does not overlap with a region where the opening 511 is formed. Then, a load G other than the load G on both outer sides in FIG. 11 is received in the load receiving regions R at both end portions along the longitudinal direction of the mask substrate 51 (see FIG. 12), and the substrate 10 to be processed is the mask substrate 5.
It is deformed so as to follow the inclination and bending of 1.

その後、前記押圧した状態で、伸縮調整部７３で支持部材７２２を伸長して各磁石体７
８を下降し、各磁石体７８を被処理基板１０の上面に近付けていき、磁石配置領域１３に
配置して被処理基板１０の上面に当接する。磁石体７８は、隣り合う押圧板７７・７７の
荷重負荷領域ＧＲ・ＧＲ間の中央に位置する所定領域と重なる領域、換言すればマスク基
板５１の開口５１１の形成領域の一部領域及び外枠５１２の一部領域とからなる磁気吸引
領域Ｍで、マスク基板５１を被処理基板１０に向けて磁気吸引する。前記磁気吸引により
、隣り合う押圧板７７・７７の荷重負荷領域ＧＲ・ＧＲ間の中央に位置する所定領域と重
なる領域で被処理基板１０とマスク基板５１との間に隙間が発生することを防止し、マス
ク基板５１を被処理基板１０に倣うように変形することができる。 After that, in the pressed state, the support member 722 is extended by the expansion / contraction adjustment unit 73 and each magnet body 7 is extended.
8 is moved down, each magnet body 78 is brought close to the upper surface of the substrate 10 to be processed, and is disposed in the magnet arrangement region 13 so as to contact the upper surface of the substrate 10 to be processed. The magnet body 78 overlaps with a predetermined region located in the center between the load-loading regions GR and GR of the adjacent pressing plates 77 and 77, in other words, a partial region of the formation region of the opening 511 of the mask substrate 51 and the outer frame. The mask substrate 51 is magnetically attracted toward the substrate 10 to be processed in the magnetic attraction region M including a partial region 512. The magnetic attraction prevents a gap from being generated between the substrate 10 to be processed and the mask substrate 51 in a region overlapping a predetermined region located in the center between the load load regions GR and GR of the adjacent pressing plates 77 and 77. Then, the mask substrate 51 can be deformed so as to follow the substrate 10 to be processed.

第３実施形態の蒸着装置１は、第１実施形態と同様の効果が得られる。更に、押圧板７
７で被処理基板１０を押圧した状態で、磁石体７８をマスク基板５１に近付けて磁気吸引
することにより、押圧で、被処理基板１０とマスク基板５１との弛みを減じつつ、被処理
基板１０とマスク基板５１の位置合わせした位置を正確に維持し、その状態のまま磁気吸
引して被処理基板１０とマスク基板５１を密着することが可能となり、被処理基板１０の
成膜精度をより一層高めることができる。また、永久磁石の磁石体７８を近付けるだけで
蒸着マスクを磁気吸引することができ、装置構成の簡略化、製造コストの低減を図ること
ができる。 The vapor deposition apparatus 1 of 3rd Embodiment can acquire the effect similar to 1st Embodiment. Furthermore, the pressing plate 7
7, the magnet body 78 is brought close to the mask substrate 51 and magnetically attracted while pressing the substrate 10 to be processed, thereby reducing the looseness between the substrate 10 to be processed and the mask substrate 51 by pressing. The mask substrate 51 and the mask substrate 51 can be accurately maintained, and the target substrate 10 and the mask substrate 51 can be brought into close contact with each other by magnetic attraction so that the film forming accuracy of the target substrate 10 is further increased. Can be increased. Further, the vapor deposition mask can be magnetically attracted only by moving the magnet body 78 of the permanent magnet close to it, so that the apparatus configuration can be simplified and the manufacturing cost can be reduced.

〔第１〜第３実施形態の変形例等〕
尚、本明細書に開示の発明は、上記課題解決手段の各発明の構成を一部変更したもの、
或いは各発明の構成を一部削除して上位概念化したものを包含するものであり、第１〜第
３実施形態等に種々の変更を加えたものも包含する。 [Modifications of First to Third Embodiments]
The invention disclosed in this specification is a partial modification of the configuration of each invention of the above problem solving means.
Or the thing which deleted the structure of each invention partially and made it a high-order concept is included, and what added the various change to 1st-3rd embodiment etc. is also included.

例えば第１〜第３実施形態は、各押圧板７１、７５、７７で被処理基板１０に負荷する
荷重Ｇを同一としているが、所要の押圧板７１、７５、７７の負荷荷重と他の押圧板７１
、７５、７７の負荷荷重とを異ならせることも可能であり、例えば図２の前後両外側の押
圧板７１の自重と、その内側の押圧板７１の自重を異ならせ、負荷荷重が異ならせる構成
等としてもよい。また、押圧板７１、７５、７７は、所要の単数又は複数の押圧板７１毎
に順次ローディングしてもよい。 For example, in the first to third embodiments, the load G to be applied to the substrate 10 to be processed by the respective pressing plates 71, 75, 77 is the same, but the required load of the pressing plates 71, 75, 77 and other pressings Board 71
2, 75, 77 can be made different from each other. For example, the weight of the pressing plate 71 on both the front and rear sides in FIG. 2 is different from the weight of the pressing plate 71 on the inner side, thereby making the load different. Etc. Further, the pressing plates 71, 75, 77 may be sequentially loaded for each required single or plural pressing plates 71.

また、本発明の被処理基板を蒸着マスクに向けて押圧する押圧部は、錘となる押圧板７
１、７４、７５、７７に限定されず、例えば押圧板の支持部材としてコイルバネ等のバネ
材を設け、前記バネ材の弾性力で押圧板を被処理基板に付勢する構成等としてもよい。ま
た、例えば前記バネ材で押圧板を付勢する構成等を用い、被処理基板１０の被成膜面を上
向きに配置して蒸着する構成や、被処理基板１０を立てて蒸着する構成とすることも可能
である。 Moreover, the pressing part which presses the to-be-processed substrate of this invention toward a vapor deposition mask is the press board 7 used as a weight.
For example, a spring material such as a coil spring may be provided as a support member for the pressing plate, and the pressing plate may be urged toward the substrate by the elastic force of the spring material. In addition, for example, a configuration in which the pressing plate is urged by the spring material is used, and a configuration in which deposition is performed with the film formation surface of the substrate to be processed 10 disposed upward, or a configuration in which the substrate to be processed 10 is stood up is deposited. It is also possible.

また、本発明の蒸着マスクを被処理基板に向けて磁気吸引する磁気吸引部は、上記実施
形態の永久磁石の押圧板７１や磁石体７８、電磁石７６に限定されず、例えば第３実施形
態の磁石体７８を電磁石とし、第２実施形態と同様に電路、制御部を設けてもよい。また
、本発明で磁気吸引する領域は、少なくとも押圧による荷重負荷領域と重なる領域以外の
領域を有するものであれば適宜であり、例えばマスク基板５１の開口５１１の形成領域近
傍に於ける外枠５１２の領域とすることも可能である。また、マスク基板５１の開口５１
１の形成領域を磁気吸引する場合には、その全部又は一部を磁気吸引することが可能であ
るが、少なくとも荷重負荷領域ＧＲ・ＧＲ間の中央に重なる領域を磁気吸引することが好
ましい。 Moreover, the magnetic attraction part which magnetically attracts the vapor deposition mask of this invention toward a to-be-processed substrate is not limited to the press plate 71, the magnet body 78, and the electromagnet 76 of the permanent magnet of the said embodiment, For example, of 3rd Embodiment. The magnet body 78 may be an electromagnet, and an electric circuit and a control unit may be provided as in the second embodiment. In the present invention, the region to be magnetically attracted is appropriate as long as it has at least a region other than the region that overlaps the load applied region by pressing. For example, the outer frame 512 in the vicinity of the region where the opening 511 of the mask substrate 51 is formed. It is also possible to set this area. Further, the opening 51 of the mask substrate 51 is used.
In the case of magnetically attracting one formation region, it is possible to magnetically attract all or part of it, but it is preferable to magnetically attract at least the region overlapping the center between the load load regions GR and GR.

また、複数のマスク基板５１を１つの押圧板で押圧し、又は１つの磁石体７８で磁気吸
引する構成とすることも可能であり、例えば上記実施形態の押圧板７１、７５、７７又は
磁石体７８を長手方向に延ばした形状とし、２つのマスク基板５１を１つの押圧板７１、
７５、７７で押圧し、又１つの磁石体７８で磁気吸引する構成としてもよい。 It is also possible to adopt a configuration in which a plurality of mask substrates 51 are pressed by one pressing plate or magnetically attracted by one magnet body 78. For example, the pressing plates 71, 75, 77 of the above embodiment or the magnet body. 78 has a shape extending in the longitudinal direction, and the two mask substrates 51 are connected to one pressing plate 71,
A configuration may be adopted in which pressing is performed by 75 and 77 and magnetic attraction is performed by one magnet body 78.

また、第１〜第３実施形態では、ホルダ６で、上記長方形のマスク基板５１の長手方向
に沿う蒸着マスク５の両端部分を保持する構成、或いは上記長方形の蒸着マスク５０の長
手方向に沿う両端部分を保持する構成としているが、これに限定されず、ホルダ６で蒸着
マスク５、５０を保持する箇所は適宜である。例えば前記長手方向と直交する方向にホル
ダ６を設け、蒸着マスク５、５０の前記直交方向の両端部分で保持する構成、或いは蒸着
マスク５、５０の下面の外周領域を支持するように周状にホルダ６を設ける構成等とする
ことが可能である。尚、前記マスク基板５１の長手方向或いは蒸着マスク５の長手方向で
蒸着マスク５、５０を保持する構成とすると、マスク基板５１或いは蒸着マスク５０の撓
みが大きくなる長手方向を押圧し、被処理基板１０とマスク基板５１或いは蒸着マスク５
との隙間をより小さくすることができるので好適である。 In the first to third embodiments, the holder 6 holds both end portions of the vapor deposition mask 5 along the longitudinal direction of the rectangular mask substrate 51, or both ends along the longitudinal direction of the rectangular vapor deposition mask 50. Although it is set as the structure which hold | maintains a part, it is not limited to this, The location holding the vapor deposition masks 5 and 50 with the holder 6 is appropriate. For example, the holder 6 is provided in a direction orthogonal to the longitudinal direction and held at both end portions of the vapor deposition masks 5 and 50 in the orthogonal direction, or circumferentially so as to support the outer peripheral region of the lower surface of the vapor deposition masks 5 and 50. A configuration in which the holder 6 is provided can be employed. If the vapor deposition masks 5 and 50 are held in the longitudinal direction of the mask substrate 51 or the longitudinal direction of the vapor deposition mask 5, the longitudinal direction in which the deflection of the mask substrate 51 or the vapor deposition mask 50 increases is pressed, and the substrate to be processed 10 and mask substrate 51 or vapor deposition mask 5
This is preferable because the gap between the two can be made smaller.

また、第１〜第３実施形態では真空蒸着装置の例を説明したが、本発明の蒸着装置は真
空蒸着装置に限定されず、例えばスパッタ蒸着装置等としてもよい。また、本発明の蒸着
マスク或いはマスク基板は、成膜パターンの開口が形成され、磁性を有するものであれば
適宜であり、例えば金属製の蒸着マスク或いはマスク基板等とすることも可能である。尚
、上記マスク基板５１で説明した構成は、適用可能な範囲で、マスク基板５１に相当する
構成の単体の蒸着マスク５０に適用できる。 Moreover, although the example of the vacuum vapor deposition apparatus was demonstrated in 1st-3rd embodiment, the vapor deposition apparatus of this invention is not limited to a vacuum vapor deposition apparatus, For example, it is good also as a sputter vapor deposition apparatus etc. The vapor deposition mask or mask substrate of the present invention is appropriate as long as it has a film-formation pattern opening and has magnetism. For example, it can be a metal vapor deposition mask or mask substrate. In addition, the structure demonstrated by the said mask substrate 51 is applicable to the single vapor deposition mask 50 of the structure corresponded to the mask substrate 51 in the applicable range.

〔電気光学装置〕
図１３は、上記実施形態の蒸着装置１で薄膜を蒸着して薄膜構造を形成された電気光学
装置の例として、有機ＥＬ装置の一例を示す模式断面図である。本例の有機ＥＬ装置１０
０は、図１３に示すように、透光性の基板１０１と、基板１０１の一方の面側に画素パタ
ーン毎に形成された陽極（画素電極）１０２と、陽極１０２上に形成された正孔輸送層１
０３と、正孔輸送層１０３上に形成された赤色、緑色、青色の各色の発光層１０４、１０
５、１０６と、発光層１０４、１０５、１０６上に形成された陰極１０７を備える。有機
ＥＬ装置１００は、マトリクス状に画素が配置される有機ＥＬ表示装置であり、図示省略
するが、基板１０１上には各画素を駆動する回路部が設けられている。 Electro-optical device
FIG. 13 is a schematic cross-sectional view showing an example of an organic EL device as an example of an electro-optical device in which a thin film is formed by vapor deposition using the vapor deposition device 1 of the above embodiment. Organic EL device 10 of this example
As shown in FIG. 13, 0 is a translucent substrate 101, an anode (pixel electrode) 102 formed for each pixel pattern on one surface side of the substrate 101, and holes formed on the anode 102. Transport layer 1
03, and light emitting layers 104, 10 of red, green, and blue colors formed on the hole transport layer 103
5 and 106, and a cathode 107 formed on the light emitting layers 104, 105, and 106. The organic EL device 100 is an organic EL display device in which pixels are arranged in a matrix. A circuit unit that drives each pixel is provided on a substrate 101, although not shown.

有機ＥＬ装置１００は、発光層１０４〜１０６の発光を基板１０１側から装置外部に取
り出すボトムエミッション型であり、基板１０１はガラス等の透明材料で形成され、陽極
１０２はインジウム錫酸化物（ＩＴＯ）等の透明導電膜で形成されている。陰極１０７は
、アルミニウム（Ａｌ）、マグネシウム銀合金（ＭｇＡｇ）等の金属電極である。正孔輸
送層１０３、発光層１０４〜１０６とで構成される機能層はそれぞれ低分子系の有機材料
で形成されており、発光層１０４〜１０６は蒸着装置１で蒸着して形成されている。発光
層１０４〜１０６では、前記回路部の制御に応じて陽極１０２と陰極１０７に電圧が印加
され、陽極１０２から正孔輸送層１０３を介して輸送された正孔と、陰極１０７からの電
子が結合し、これにより発光層１０４〜１０６が発光する。有機ＥＬ装置１００は、発光
層１０４〜１０６の成膜精度に優れ、信頼性の高い表示が可能であり、高品質なものとな
る。尚、正孔輸送層１０３、更に陰極１０７を蒸着装置１で蒸着して形成してもよい。 The organic EL device 100 is a bottom emission type in which light emitted from the light emitting layers 104 to 106 is extracted from the substrate 101 side to the outside of the device, the substrate 101 is formed of a transparent material such as glass, and the anode 102 is indium tin oxide (ITO). It is formed with a transparent conductive film. The cathode 107 is a metal electrode such as aluminum (Al) or magnesium silver alloy (MgAg). The functional layers including the hole transport layer 103 and the light emitting layers 104 to 106 are each formed of a low molecular weight organic material, and the light emitting layers 104 to 106 are formed by vapor deposition using the vapor deposition apparatus 1. In the light emitting layers 104 to 106, voltage is applied to the anode 102 and the cathode 107 in accordance with the control of the circuit portion, and holes transported from the anode 102 through the hole transport layer 103 and electrons from the cathode 107 are transmitted. As a result, the light emitting layers 104 to 106 emit light. The organic EL device 100 is excellent in film formation accuracy of the light emitting layers 104 to 106, can display with high reliability, and has high quality. The hole transport layer 103 and the cathode 107 may be formed by vapor deposition using the vapor deposition apparatus 1.

有機ＥＬ装置１００を上記実施形態の蒸着装置１で製造する際には、例えば基板１０１
上にＩＴＯ等の透明導電膜で陽極１０２を形成し、陽極１０２上に正孔輸送層１０３を形
成する。その後、陽極１０２と正孔輸送層１０３が形成された被成膜面側を下側にして、
被処理基板１０に相当する陽極１０２と正孔輸送層１０３が形成された基板１０１を蒸着
装置１の蒸着槽２内に搬送する。蒸着槽２内では、基板１０１と蒸着マスク５の位置を合
わせ、基板１０１の被成膜面側に蒸着マスク５を重ねて配置し、その状態の基板１０１と
蒸着マスク５をホルダ６で水平に保持する。 When the organic EL device 100 is manufactured by the vapor deposition device 1 of the above embodiment, for example, the substrate 101
An anode 102 is formed with a transparent conductive film such as ITO, and a hole transport layer 103 is formed on the anode 102. Thereafter, the deposition surface side on which the anode 102 and the hole transport layer 103 are formed is on the lower side,
The substrate 101 on which the anode 102 corresponding to the substrate to be processed 10 and the hole transport layer 103 are formed is transferred into the vapor deposition tank 2 of the vapor deposition apparatus 1. In the vapor deposition tank 2, the positions of the substrate 101 and the vapor deposition mask 5 are aligned, the vapor deposition mask 5 is placed on the deposition surface side of the substrate 101, and the substrate 101 and the vapor deposition mask 5 in that state are horizontally placed by the holder 6. Hold.

次いで、基板１０１の被成膜面と反対側の密着機構７又は７０により、基板１０１を蒸着
マスク５に向けて押圧すると共に、蒸着マスク５を基板１０１に向けて磁気吸引し、基板
１０１と蒸着マスク５とを密着させる。前記押圧及び磁気吸引に於いて、蒸着マスク５が
マスク基板５１とベース基板５２で構成される場合には、基板１０１をマスク基板５１に
向けて押圧すると共に、マスク基板５１を基板１０１に向けて磁気吸引し、基板１０１と
マスク基板５１とを密着させる。更に、真空雰囲気の蒸着槽２に於いて蒸着源４で蒸着物
質を蒸発させ、蒸着マスク５の一色の発光層に相当する成膜パターンの開口５１１等を介
して蒸着粒子を基板１０１の被成膜面に蒸着し、赤色の発光層１０４を形成する。発光層
１０４の蒸着形成後には、前記押圧と磁気吸引を解除する。そして、例えば被処理基板１
０を支持具（図示省略）で支持し、ホルダ６の水平方向への移動等で蒸着マスク５を緑色
の発光層１０５の蒸着位置まで移動すると共に、伸縮調整部７３で支持部材７２、７２１
、７２２を水平方向へ移動し、前記蒸着マスク５の位置に対応させて押圧板７１、７４、
７５、７７や磁石体７８を配置する。更に、上記と同様に押圧及び磁気吸引して基板１０
１と蒸着マスク５を密着させ、緑色の発光層１０５を形成する。その後、同様の処理によ
り、青色の発光層１０６を形成する。 Next, the substrate 101 is pressed toward the deposition mask 5 by the contact mechanism 7 or 70 on the opposite side to the film formation surface of the substrate 101, and the deposition mask 5 is magnetically attracted toward the substrate 101, and the substrate 101 and the deposition are deposited. The mask 5 is brought into close contact. In the pressing and magnetic attraction, when the vapor deposition mask 5 is composed of the mask substrate 51 and the base substrate 52, the substrate 101 is pressed toward the mask substrate 51 and the mask substrate 51 is directed toward the substrate 101. The substrate 101 and the mask substrate 51 are brought into close contact with each other by magnetic attraction. Further, the vapor deposition material is evaporated by the vapor deposition source 4 in the vapor deposition tank 2 in a vacuum atmosphere, and the vapor deposition particles are deposited on the substrate 101 through the openings 511 of the film formation pattern corresponding to the light emitting layer of one color of the vapor deposition mask 5. The red light emitting layer 104 is formed by vapor deposition on the film surface. After the formation of the light emitting layer 104 by vapor deposition, the pressing and magnetic attraction are released. For example, the substrate 1 to be processed
0 is supported by a support (not shown), the deposition mask 5 is moved to the deposition position of the green light emitting layer 105 by moving the holder 6 in the horizontal direction, and the support members 72, 721 are moved by the expansion / contraction adjustment unit 73.
, 722 in the horizontal direction, and corresponding to the position of the vapor deposition mask 5, the pressing plates 71, 74,
75, 77 and a magnet body 78 are arranged. Further, the substrate 10 is pressed and magnetically attracted in the same manner as described above.
1 and the vapor deposition mask 5 are brought into close contact with each other to form a green light emitting layer 105. Thereafter, a blue light emitting layer 106 is formed by the same treatment.

尚、有機ＥＬ装置１００に機能層として正孔注入層、電子注入層、電子輸送層を設ける
場合には、所要の機能層を本発明の蒸着装置で蒸着することが可能である。また、有機Ｅ
Ｌ装置は、有機ＥＬ表示装置の他にも適宜であり、例えばプリンターヘッドなど各種の有
機ＥＬ装置とすることが可能である。また、本発明の蒸着装置で蒸着される薄膜構造を備
える電気光学装置は、有機ＥＬ装置の他にも適宜であり、例えば液晶装置としてもよい。 In addition, when providing a hole injection layer, an electron injection layer, and an electron carrying layer as a functional layer in the organic EL apparatus 100, a required functional layer can be vapor-deposited with the vapor deposition apparatus of this invention. Organic E
The L device is appropriate in addition to the organic EL display device, and can be various organic EL devices such as a printer head. In addition to the organic EL device, the electro-optical device having a thin film structure deposited by the vapor deposition device of the present invention is appropriate, for example, a liquid crystal device.

〔電子機器〕
上記実施形態の蒸着装置１で薄膜を蒸着して形成する薄膜構造は各種の電子機器に設け
ることが可能である。有機ＥＬ装置など電気光学装置として前記薄膜構造を備える電子機
器の例としては、携帯電話機、ＰＤＡ等の携帯情報端末、ページャ、電子ブック、電子手
帳、電子ペーパー、腕時計、ノートパソコン、ワードプロセッサ、モニター、テレビ、テ
レビ電話機、デジタルカメラ、ビューファインダー型・モニター直視型のビデオテープレ
コーダー、カーナビゲーション装置、ＰＯＳ端末など、前記薄膜構造を表示部である電気
光学装置に備える電子機器や、エレクトロクロミック調光ガラス、照明装置、前記薄膜構
造をプリンターヘッドとして備えるプリンター等が挙げられる。また、前記薄膜構造を備
える電子機器は、例えば各種の半導体装置として半導体基板に前記薄膜構造を備えるもの
等、電気光学装置以外の各種装置として前記薄膜構造を備えるものとしてもよい。これら
の電子機器は、優れた成膜精度の薄膜構造を有し、信頼性の高い表示が可能である等、高
品質なものとなる。〔Electronics〕
A thin film structure formed by depositing a thin film with the vapor deposition apparatus 1 of the above embodiment can be provided in various electronic devices. Examples of electronic equipment having the thin film structure as an electro-optical device such as an organic EL device include a portable information terminal such as a mobile phone and a PDA, a pager, an electronic book, an electronic notebook, electronic paper, a wristwatch, a notebook computer, a word processor, a monitor, Electronic devices and electrochromic light control glasses, such as televisions, video phones, digital cameras, viewfinder type / monitor direct view type video tape recorders, car navigation devices, POS terminals, etc., which are equipped with the above-mentioned thin film structure in electro-optical devices as display units , A lighting device, a printer including the thin film structure as a printer head, and the like. In addition, the electronic device including the thin film structure may include the thin film structure as various devices other than the electro-optical device, such as a semiconductor substrate including the thin film structure as a semiconductor substrate. These electronic devices have a thin film structure with excellent film forming accuracy, and are of high quality, such as being capable of highly reliable display.

第１実施形態の蒸着装置を示す模式断面図。The schematic cross section which shows the vapor deposition apparatus of 1st Embodiment. 第１実施形態の蒸着装置の押圧板、被処理基板及び蒸着マスクの位置関係を示す斜視図。The perspective view which shows the positional relationship of the press plate of the vapor deposition apparatus of 1st Embodiment, a to-be-processed substrate, and a vapor deposition mask. 第１実施形態に於ける押圧板の押圧及び磁気吸引を説明する縦断説明図。FIG. 3 is a longitudinal explanatory view for explaining pressing of the pressing plate and magnetic attraction in the first embodiment. 第１実施形態に於ける蒸着マスクの平面説明図。Plane explanatory drawing of the vapor deposition mask in 1st Embodiment. 第１実施形態に於けるマスク基板の製造工程を説明する模式図。The schematic diagram explaining the manufacturing process of the mask substrate in 1st Embodiment. 第１実施形態の蒸着装置の変形例に於ける押圧板の押圧を説明する縦断説明図。Longitudinal explanatory drawing explaining the press of the press plate in the modification of the vapor deposition apparatus of 1st Embodiment. 第２実施形態の蒸着装置の押圧板、被処理基板及び蒸着マスクの位置関係を示す斜視図。The perspective view which shows the positional relationship of the press plate of the vapor deposition apparatus of 2nd Embodiment, a to-be-processed substrate, and a vapor deposition mask. 第２実施形態に於ける蒸着マスクの平面説明図。Plane explanatory drawing of the vapor deposition mask in 2nd Embodiment. 第３実施形態の蒸着装置を示す模式断面図。The schematic cross section which shows the vapor deposition apparatus of 3rd Embodiment. 第３実施形態の蒸着装置の押圧板、磁石体、被処理基板及び蒸着マスクの位置関係を示す斜視図。The perspective view which shows the positional relationship of the press plate of the vapor deposition apparatus of 3rd Embodiment, a magnet body, a to-be-processed substrate, and a vapor deposition mask. 第３実施形態に於ける押圧板の押圧及び磁石体の磁気吸引を説明する縦断説明図。The longitudinal section explanatory drawing explaining press of a press plate and magnetic attraction of a magnet body in a 3rd embodiment. 第３実施形態に於ける蒸着マスクの平面説明図。Plane explanatory drawing of the vapor deposition mask in 3rd Embodiment. 実施形態の蒸着装置で薄膜を蒸着して薄膜構造を形成された有機ＥＬ装置の一例を示す模式断面図。The schematic cross section which shows an example of the organic EL apparatus by which the thin film was vapor-deposited with the vapor deposition apparatus of embodiment, and the thin film structure was formed.

符号の説明Explanation of symbols

１…蒸着装置２…蒸着槽３…真空ポンプ４…蒸着源５、５０…蒸着マスク５１
…マスク基板５１１…開口５１２…外枠５２…ベース基板５２１…アラインメン
トマーク５１ａ…シリコン基板５１ｂ…耐アルカリ膜５１ｃ…下地膜５１
ｄ…磁性体膜６…ホルダ７、７０…密着機構７１、７４、７５、７７…押圧板７
２、７２１、７２２…支持部材７３…伸縮調整部７６…電磁石７８…磁石体１０
…被処理基板１１、１２…押圧板配置領域１３…磁石配置領域１００…有機ＥＬ装
置Ｇ…荷重ＧＲ…荷重負荷領域Ｒ…荷重受領域Ｍ…磁気吸引領域 DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus 2 ... Deposition tank 3 ... Vacuum pump 4 ... Deposition source 5, 50 ... Deposition mask 51
... Mask substrate 511 ... Opening 512 ... Outer frame 52 ... Base substrate 521 ... Alignment mark 51a ... Silicon substrate 51b ... Alkali-resistant film 51c ... Base film 51
d ... Magnetic film 6 ... Holder 7, 70 ... Adhesion mechanism 71, 74, 75, 77 ... Pressing plate 7
2, 721, 722 ... support member 73 ... expansion / contraction adjustment part 76 ... electromagnet 78 ... magnet body 10
... Processed substrates 11, 12 ... Pressing plate arrangement area 13 ... Magnet arrangement area 100 ... Organic EL device G ... Load GR ... Load load area R ... Load receiving area M ... Magnetic attraction area

Claims

成膜パターンの開口を有すると共に磁性を有し、被処理基板の被成膜面側に重ねて配置
される蒸着マスクと、
前記被処理基板の被成膜面と反対側から、前記被処理基板を蒸着マスクに向けて押圧す
る押圧部と、
前記被処理基板の被成膜面と反対側から、少なくとも前記押圧による荷重負荷領域と重
なる領域以外の領域で、前記蒸着マスクを前記被処理基板に向けて磁気吸引する磁気吸引
部とを備えることを特徴とする蒸着装置。 A vapor deposition mask having an opening of a film formation pattern and having magnetism, and being disposed on the film formation surface side of the substrate to be processed;
A pressing portion that presses the substrate to be processed toward the deposition mask from the side opposite to the film formation surface of the substrate to be processed;
A magnetic attraction unit that magnetically attracts the vapor deposition mask toward the substrate to be processed in a region other than a region that overlaps a load-loading region due to the pressing from the side opposite to the film formation surface of the substrate to be processed; The vapor deposition apparatus characterized by this.

前記蒸着マスクを、成膜パターンの開口を有すると共に磁性を有する複数のマスク基板
と、前記複数のマスク基板を保持するベース基板とで構成し、
前記マスク基板を前記磁気吸引部で磁気吸引することを特徴とする請求項１記載の蒸着
装置。 The vapor deposition mask is composed of a plurality of mask substrates having openings of film formation patterns and magnetism, and a base substrate holding the plurality of mask substrates,
The vapor deposition apparatus according to claim 1, wherein the mask substrate is magnetically attracted by the magnetic attraction unit.

前記蒸着マスクの開口形成領域の少なくとも一部領域を前記磁気吸引部で磁気吸引する
ことを特徴とする請求項１又は２記載の蒸着装置。 The vapor deposition apparatus according to claim 1, wherein at least a partial area of an opening formation area of the vapor deposition mask is magnetically attracted by the magnetic attraction unit.

前記押圧部の押圧による前記被処理基板に対する荷重負荷領域を、前記蒸着マスクの開
口形成領域と重ならない領域とすることを特徴とする請求項１〜３の何れかに記載の蒸着
装置。 The vapor deposition apparatus according to any one of claims 1 to 3, wherein a load load area on the substrate to be processed by the pressing of the pressing portion is an area that does not overlap with an opening formation area of the vapor deposition mask.

前記被処理基板に対する荷重負荷領域を、前記マスク基板の外枠と重なる領域とするこ
とを特徴とする請求項４記載の蒸着装置。 The vapor deposition apparatus according to claim 4, wherein a load load area on the substrate to be processed is an area overlapping with an outer frame of the mask substrate.

前記押圧部で前記被処理基板を押圧した状態で、前記磁気吸引部で前記蒸着マスクを磁
気吸引することを特徴とする請求項１〜５の何れかに記載の蒸着装置。 The vapor deposition apparatus according to claim 1, wherein the vapor deposition mask is magnetically attracted by the magnetic attraction unit in a state where the substrate to be processed is pressed by the pressing unit.

前記磁気吸引部を電磁石として前記押圧部に一体的に設け、前記押圧部で前記被処理基
板を押圧した状態で、前記電磁石の磁力を発生させて前記蒸着マスクを磁気吸引すること
を特徴とする請求項６記載の蒸着装置。 The magnetic attraction part is integrally provided on the pressing part as an electromagnet, and the deposition mask is magnetically attracted by generating a magnetic force of the electromagnet in a state where the substrate to be processed is pressed by the pressing part. The vapor deposition apparatus according to claim 6.

前記磁気吸引部を永久磁石として前記押圧部と別体で設け、前記押圧部で前記被処理基
板を押圧した状態で、前記永久磁石を前記被処理基板に近付けて前記蒸着マスクを磁気吸
引することを特徴とする請求項６記載の蒸着装置。 The magnetic attraction unit is provided as a permanent magnet separately from the pressing unit, and the deposition mask is magnetically attracted by bringing the permanent magnet close to the processing substrate in a state where the processing substrate is pressed by the pressing unit. The vapor deposition apparatus according to claim 6.

成膜パターンの開口を有すると共に磁性を有する蒸着マスクを、被処理基板の被成膜面
側に重ねて配置する工程と、
前記被処理基板の被成膜面と反対側から、前記被処理基板を前記蒸着マスクに向けて押
圧すると共に、前記被処理基板の被成膜面と反対側から、少なくとも前記押圧による荷重
負荷領域と重なる領域以外の領域で、前記蒸着マスクを前記被処理基板に向けて磁気吸引
する工程と、
前記被処理基板の被成膜面側に前記成膜パターンの開口を介して蒸着する工程とを備え
ることを特徴とする蒸着方法。 A step of arranging a deposition mask having an opening of a film formation pattern and magnetism on the film formation surface side of the substrate to be processed; and
The substrate to be processed is pressed toward the vapor deposition mask from the side opposite to the film formation surface of the substrate to be processed, and at least a load load region due to the pressing from the side opposite to the film formation surface of the substrate to be processed. Magnetically attracting the vapor deposition mask toward the substrate to be processed in a region other than a region overlapping with
A vapor deposition method comprising: vapor-depositing on a film deposition surface side of the substrate to be processed through an opening of the film deposition pattern.

請求項１〜８の何れかに記載の蒸着装置で前記被処理基板に薄膜を蒸着された薄膜構造
を備えることを特徴とする電気光学装置。 An electro-optical device comprising: a thin film structure in which a thin film is deposited on the substrate to be processed by the vapor deposition device according to claim 1.

請求項１〜８の何れかに記載の蒸着装置で前記被処理基板に薄膜を蒸着された薄膜構造
を有する装置を備えることを特徴とする電子機器。 An electronic apparatus comprising a device having a thin film structure in which a thin film is deposited on the substrate to be processed by the vapor deposition device according to claim 1.