JP2008205462A - フロントコンタクトを有するパッケージ化された半導体発光デバイスを圧縮成形により形成する方法 - Google Patents
フロントコンタクトを有するパッケージ化された半導体発光デバイスを圧縮成形により形成する方法 Download PDFInfo
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Abstract
【解決手段】半導体発光デバイスをパッケージ化する方法は、前面上に半導体発光デバイス及びコンタクトを有する基板を設けるステップを含む。発光デバイスは、基板の前面上のコンタクトと電気的に接続される。基板は圧縮成形されて、基板の前面上で半導体発光デバイスを覆う光学要素と、基板の前面のコンタクトを含む領域を覆う残余コーティングとを形成する。コンタクトを覆う残余コーティングは、コンタクトに損傷を与えずに除去することができる。パッケージ化された半導体発光デバイスもまた提供される。
【選択図】図5
Description
Claims (26)
- 半導体発光デバイスをパッケージ化する方法であって、
前面の上に前記半導体発光デバイスおよびコンタクトを有する基板を設けるステップであって、前記半導体発光デバイスは、前記基板の前記前面の上の前記コンタクトと電気的に接続されるステップと、
前記基板の前記前面の上の前記半導体発光デバイスの上を覆う光学要素と、前記基板の前記前面の前記コンタクトを含む領域の上を覆う残余コーティングとを圧縮成形するステップと
を含むことを特徴とする方法。 - 前記コンタクトに損傷を与えずに前記コンタクトの上を覆う前記残余コーティングを除去するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記基板を設けるステップは、
前記基板の前記前面の上に前記半導体発光デバイスを備え付けるステップと、
前記半導体発光デバイスを前記基板のコンタクト部分に電気的に接続するワイヤボンドを取り付けるステップと
を含むことを特徴とする請求項2に記載の方法。 - 前記基板の背面の上に第2の半導体発光デバイスを備え付けるステップと、
前記第2の半導体発光デバイスを前記基板の前記背面の上のコンタクトに電気的に接続するステップと
をさらに含むことを特徴とする請求項3に記載の方法。 - 前記圧縮成形するステップは、前記基板を圧縮成形して前記半導体発光デバイス及び前記ワイヤボンドの上を覆う前記光学要素を形成し、前記ワイヤボンドと直接に接触させるステップを含むことを特徴とする請求項3に記載の方法。
- 前記基板は、セラミック基板、メタルコアプリント回路基板(MCPCB)、可撓性回路基板、および/またはリードフレームを備えることを特徴とする請求項2に記載の方法。
- 前記圧縮成形するステップに先行して、前記前面側のコンタクトを覆うマスクを設けるステップが行われ、
前記残余コーティングを除去するステップは、前記マスクを除去ステップを含むことを特徴とする請求項2に記載の方法。 - 前記マスクは、ポリイミドフィルムを備えることを特徴とする請求項7に記載の方法。
- 前記マスクを除去するステップは、
前記マスクに対応するパターンに前記残余コーティングをカットするステップと、
前記マスク及び前記マスクに覆い重なっている前記残余コーティングを除去して、前記前面側のコンタクトを露出させるステップと
を含むことを特徴とする請求項7に記載の方法。 - 前記基板は、前記前面の上に複数の半導体発光デバイス及び複数のコンタクトを備え、
前記圧縮成形するステップは、前記基板を圧縮成形して、前記基板の前記前面の上に前記半導体発光デバイスの対応したそれぞれを覆う複数の光学要素と、前記基板の前記前面の上の前記複数のコンタクトを含む領域を覆う残余コーティングとを形成するステップを含み、
前記残余コーティングをカットするステップは、ホットナイフを用いて前記残余コーティングをカットするステップであって、前記ホットナイフは、前記残余コーティングの中にカットされたパターンに対応するパターンを有するステップを含むことを特徴とする請求項9に記載の方法。 - 前記光学要素は、レンズを備え、
前記圧縮成形するステップは、
前記複数の半導体発光デバイスの対応したそれぞれの近傍に位置する複数のレンズ形状のキャビティを備える鋳型の中に前記基板を配置するステップと、
前記鋳型の中にシリコーンを供給するステップと、
前記キャビティの中の前記シリコーンから前記レンズを圧縮成形するステップと、
前記鋳型の中で形成された前記レンズを有する前記基板を前記鋳型から取り外すステップと
を含むことを特徴とする請求項10に記載の方法。 - 前記シリコーンを提供するステップに先行して、前記キャビティを備える前記鋳型の表面上に剥離層を設けるステップが行われ、
前記基板を取り外すステップは、前記剥離層のところで前記基板を取り外すステップを含むことを特徴とする請求項11に記載の方法。 - 前記基板は、可撓性回路基板を備え、
前記残余コーティングを除去するステップは、前記基板を湿式溶媒で化学洗浄して前記コンタクトの上を覆う前記残余コーティングを除去するステップを含むことを特徴とする請求項2に記載の方法。 - 前記基板は、前記前面の上に複数の半導体発光デバイス及び複数のコンタクトを備え、
前記基板を圧縮成形するステップは、前記基板を圧縮成形して、前記基板の前記前面の上に前記半導体発光デバイスの対応したそれぞれを覆う複数の光学要素と、前記基板の前記前面の前記複数のコンタクトを含む領域を覆う残余コーティングとを形成するステップを含むことを特徴とする請求項13に記載の方法。 - 前記光学要素は、レンズを備え、
前記圧縮成形するステップは、
前記複数の半導体発光デバイスの対応したそれぞれの近傍に位置する複数のレンズ形状のキャビティを備える鋳型の中に前記基板を配置するステップと、
前記鋳型の中にシリコーンを供給するステップと、
前記キャビティの中の前記シリコーンから前記レンズを圧縮成形するステップと、
前記鋳型の中に形成された前記レンズを有する前記基板を前記鋳型から取り外すステップと
を含むことを特徴とする請求項14に記載の方法。 - 前記光学要素は、第1の光学要素および第2の光学要素を備え、
前記圧縮成形するステップは、
前記半導体発光デバイスの近傍に前記第1の光学要素を圧縮成形するステップと、
前記半導体発光デバイス及び前記第1の光学要素の上を覆って前記第2の光学要素を圧縮成形するステップと
を含むことを特徴とする請求項2に記載の方法。 - 前記第1の光学要素を圧縮成形するステップは、前記半導体発光デバイスの上を覆って前記第1の光学要素を圧縮成形するステップを含むことを特徴とする請求項16に記載の方法。
- 前記光学要素は、第2の光学要素を備え、前記圧縮成形するステップに先行して前記半導体発光デバイスの近傍に第1の光学要素を形成するステップを行い、
前記基板を圧縮成形するステップは、前記半導体発光デバイス及び前記第1の光学要素の上を覆って前記第2の光学要素を圧縮成形するステップを含むことを特徴とする請求項2に記載の方法。 - 前記光学要素は、第1の光学要素を備え、
前記半導体発光デバイス及び前記第1の光学要素の上を覆って第2の光学要素を形成するステップを、前記圧縮成形するステップの後に行うことを特徴とする請求項2に記載の方法。 - パッケージ化された半導体発光デバイスであって、
前面の上にコンタクトを有する基板と、
前記基板の前記前面の上に備え付けられた半導体発光デバイスと、
前記基板の前記前面の上に前記半導体発光デバイスの上を覆って圧縮成形された光学要素と
を備えることを特徴とするデバイス。 - 前記半導体発光デバイスは、反射キャビティを伴わずに、前記基板の前記前面の上に前記前面と同じ高さに備え付けられ、
前記光学要素は、前記基板の前記前面の前記半導体発光デバイスを囲む領域に成形されて前記領域から延在し、前記半導体発光デバイスの上を覆って延在することを特徴とする請求項20に記載のデバイス。 - 前記光学要素は、第2の光学要素を備え、
前記デバイスは、前記半導体発光デバイスの近傍に位置する第1の光学要素をさらに備え、
前記第2の光学要素は、前記第1の光学要素の上を覆って延在することを特徴とする請求項21に記載のデバイス。 - 前記第1の光学要素は、圧縮成形された光学要素を備えることを特徴とする請求項22に記載のデバイス。
- 前記圧縮成形された光学要素は、シリコーンレンズを備えることを特徴とする請求項21に記載のデバイス。
- 前記半導体発光デバイスは、複数の半導体発光デバイスを備え、
前記コンタクトは、前記前面の上に複数のコンタクトを備え、
前記圧縮成形された光学要素は、前記半導体発光デバイスの対応するそれぞれの上を覆う複数の圧縮成形された光学要素を備えることを特徴とする請求項21に記載のデバイス。 - 前記光学要素は、シリコーンレンズを備えることを特徴とする請求項25に記載のデバイス。
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US11/705,233 US9061450B2 (en) | 2007-02-12 | 2007-02-12 | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
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JP2015507371A (ja) * | 2012-02-10 | 2015-03-05 | コーニンクレッカ フィリップス エヌ ヴェ | チップスケールのledパッケージを形成する成型レンズ及び該成型レンズを製造する方法 |
JP2018014509A (ja) * | 2012-02-10 | 2018-01-25 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Led構造 |
JP2013232656A (ja) * | 2013-06-10 | 2013-11-14 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
US9911904B2 (en) | 2015-08-31 | 2018-03-06 | Nichia Corporation | Composite board, light-emitting device, and manufacturing method of light-emitting device |
US10566504B2 (en) | 2015-08-31 | 2020-02-18 | Nichia Corporation | Composite board, light-emitting device, and manufacturing method of light-emitting device |
US11011682B2 (en) | 2015-08-31 | 2021-05-18 | Nichia Corporation | Composite board, light-emitting device, and manufacturing method of light-emitting device |
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JP5063398B2 (ja) | 2012-10-31 |
DE102008008058A1 (de) | 2008-08-28 |
US20120235180A1 (en) | 2012-09-20 |
US8669573B2 (en) | 2014-03-11 |
US8822245B2 (en) | 2014-09-02 |
US9061450B2 (en) | 2015-06-23 |
US20110101385A1 (en) | 2011-05-05 |
US20080191225A1 (en) | 2008-08-14 |
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