JP2008153797A - 圧電薄膜共振器およびフィルタ - Google Patents
圧電薄膜共振器およびフィルタ Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】本発明は、基板(41)の空隙(46)上または基板との間に空隙が形成されるように設けられた下部電極(43)と、下部電極上に設けられた圧電膜(44)と、圧電膜を挟み下部電極と対向する共振領域(50)を有するように圧電膜上に設けられた上部電極(45)と、共振領域の周辺に設けられ、横方向に伝搬する波動の波長の0.35倍から0.65倍の幅を有し波動の通過する支持領域(52)と、支持領域の周辺に設けられ、横方向に伝搬する波動を遮断する周辺領域(54)と、を具備する圧電薄膜共振器およびフィルタである。
【選択図】図9
Description
13、23、33、43 下部電極
14、24,34、44 圧電薄膜
15、25、35、45 上部電極
16、26、36、46 空隙
48 質量付加膜
50 共振領域
52 支持領域
54 周辺領域
Claims (9)
- 基板の空隙上または基板との間に空隙が形成されるように設けられた下部電極と、
該下部電極上に設けられた圧電膜と、
前記圧電膜を挟み前記下部電極と対向する共振領域を有するように前記圧電膜上に設けられた上部電極と、
前記共振領域の周辺に設けられ、横方向に伝搬する波動の波長の0.35倍から0.65倍の幅を有し前記波動の通過する支持領域と、
前記支持領域の周辺に設けられ、前記波動を遮断する周辺領域と、を具備することを特徴とする圧電薄膜共振器。 - 基板の空隙上または基板との間に空隙が形成されるように設けられた下部電極と、
該下部電極上に設けられた圧電膜と、
前記圧電膜を挟み前記下部電極と対向する共振領域を有するように前記圧電膜上に設けられた上部電極と、
前記共振領域の周辺に設けられ、横方向に伝搬する波動の波長の0.35倍から0.65倍の幅を有し、前記空隙上の前記下部電極と前記圧電膜とからなる支持領域と、
前記支持領域の周辺に設けられ、前記基板と前記下部電極と前記圧電膜とからなる周辺領域と、を具備することを特徴とする圧電薄膜共振器。 - 基板の空隙上または基板との間に空隙が形成されるように設けられた下部電極と、
該下部電極上に設けられた圧電膜と、
前記圧電膜を挟み前記下部電極と対向する共振領域を有するように前記圧電膜上に設けられた上部電極と、
前記共振領域の周辺に設けられ、横方向に伝搬する波動の波長の0.35倍から0.65倍の幅を有し、前記空隙上の前記圧電膜と前記上部電極とからなる支持領域と、
前記支持領域の周辺に設けられ、前記基板と前記圧電膜と上部電極とからなる周辺領域と、を具備することを特徴とする圧電薄膜共振器。 - 基板の空隙上または基板との間に空隙が形成されるように設けられた下部電極と、
該下部電極上に設けられた圧電膜と、
前記圧電膜を挟み前記下部電極と対向する共振領域を有するように前記圧電膜上に設けられた上部電極と、
前記共振領域の周辺に設けられ、横方向に伝搬する波動の波長の0.35倍から0.65倍の幅を有し、前記空隙上の前記圧電膜と前記下部電極および前記上部電極のいずれか一方とからなる支持領域と、
前記支持領域の周辺に設けられ、前記空隙上の前記圧電膜からなる周辺領域と、を具備することを特徴とする圧電薄膜共振器。 - 基板の空隙上または基板との間に空隙が形成されるように設けられた下部電極と、
該下部電極上に設けられた圧電膜と、
前記圧電膜を挟み前記下部電極と対向する共振領域を有するように前記圧電膜上に設けられた上部電極と、
前記共振領域の周辺に設けられ、前記空隙上の前記圧電膜と前記下部電極および前記上部電極のうちのいずれか一方とからなる支持領域と、
前記支持領域の周辺に設けられ、前記空隙上の前記圧電膜と前記下部電極および前記上部電極のうち前記一方と質量付加膜とからなる周辺領域と、を具備することを特徴とする圧電薄膜共振器。 - 前記支持領域の幅は、横方向に伝搬する波動の波長の0.35倍以上かつ0.65倍以下であることを特徴とする請求項5記載の圧電薄膜共振器。
- 前記質量付加膜は金属膜または絶縁膜であることを特徴とする請求項5または6記載の圧電薄膜共振器。
- 前記支持領域の幅は、横方向に伝搬する波動の波長の0.5倍であることを特徴とする請求項1から7のいずれか一項記載の圧電薄膜共振器。
- 請求項1から8のいずれか一項記載の圧電薄膜共振器を有するフィルタ。
Priority Applications (4)
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JP2006337711A JP4870541B2 (ja) | 2006-12-15 | 2006-12-15 | 圧電薄膜共振器およびフィルタ |
CN200710198855XA CN101207370B (zh) | 2006-12-15 | 2007-12-14 | 薄膜体声波谐振器 |
KR20070131456A KR100922475B1 (ko) | 2006-12-15 | 2007-12-14 | 압전 박막 공진기 및 필터 |
US12/000,654 US7816998B2 (en) | 2006-12-15 | 2007-12-14 | Film bulk acoustic resonator and filter |
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JP2006337711A JP4870541B2 (ja) | 2006-12-15 | 2006-12-15 | 圧電薄膜共振器およびフィルタ |
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JP4870541B2 JP4870541B2 (ja) | 2012-02-08 |
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US (1) | US7816998B2 (ja) |
JP (1) | JP4870541B2 (ja) |
KR (1) | KR100922475B1 (ja) |
CN (1) | CN101207370B (ja) |
Cited By (3)
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JP2018125762A (ja) * | 2017-02-02 | 2018-08-09 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
JP2022507318A (ja) * | 2019-04-04 | 2022-01-18 | 中芯集成電路(寧波)有限公司上海分公司 | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム |
JP2022507306A (ja) * | 2019-04-04 | 2022-01-18 | 中芯集成電路(寧波)有限公司上海分公司 | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム |
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CN101207370B (zh) | 2012-04-18 |
US20080150653A1 (en) | 2008-06-26 |
KR20080055740A (ko) | 2008-06-19 |
US7816998B2 (en) | 2010-10-19 |
CN101207370A (zh) | 2008-06-25 |
JP4870541B2 (ja) | 2012-02-08 |
KR100922475B1 (ko) | 2009-10-21 |
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