JP2008153021A5 - - Google Patents
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- JP2008153021A5 JP2008153021A5 JP2006338696A JP2006338696A JP2008153021A5 JP 2008153021 A5 JP2008153021 A5 JP 2008153021A5 JP 2006338696 A JP2006338696 A JP 2006338696A JP 2006338696 A JP2006338696 A JP 2006338696A JP 2008153021 A5 JP2008153021 A5 JP 2008153021A5
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- JP
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- Prior art keywords
- electron
- manufacturing
- catalyst layer
- emitting device
- catalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (5)
前記触媒層を加熱し、
減圧雰囲気下において、前記触媒層の周囲に混合ガスを導入し、
プラズマを発生させてＣＶＤを行い、前記電子放出部を形成することを特徴とする電子放出素子の製造方法。 A method for manufacturing an electron-emitting device, comprising: forming an electron-emitting portion that includes a carbon material and has a fibrous or tubular shape and has an exposed end surface of a graphene sheet on a side portion on a conductive catalyst layer. There,
Heating the catalyst layer;
In a reduced pressure atmosphere, a mixed gas is introduced around the catalyst layer,
A method of manufacturing an electron-emitting device, wherein plasma is generated to perform CVD to form the electron-emitting portion.
前記触媒層を加熱し、
減圧雰囲気下において、前記触媒層の周囲に混合ガスを導入し、
プラズマを発生させてＣＶＤを行うとともに、
前記電子放出部を形成するに際して、前記触媒層の触媒の核の大きさまたは形状を調整することを特徴とする電子放出素子の製造方法。 A method for manufacturing an electron-emitting device, comprising: forming an electron-emitting portion that includes a carbon material and forms a fibrous or tubular shape on a conductive catalyst layer,
Heating the catalyst layer;
In a reduced pressure atmosphere, a mixed gas is introduced around the catalyst layer,
While generating plasma and performing CVD,
A method of manufacturing an electron-emitting device, wherein the size or shape of a catalyst nucleus of the catalyst layer is adjusted when forming the electron-emitting portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006338696A JP5300193B2 (en) | 2006-12-15 | 2006-12-15 | Method for manufacturing electron-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006338696A JP5300193B2 (en) | 2006-12-15 | 2006-12-15 | Method for manufacturing electron-emitting device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008153021A JP2008153021A (en) | 2008-07-03 |
| JP2008153021A5 true JP2008153021A5 (en) | 2010-02-04 |
| JP5300193B2 JP5300193B2 (en) | 2013-09-25 |
Family
ID=39654992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006338696A Expired - Fee Related JP5300193B2 (en) | 2006-12-15 | 2006-12-15 | Method for manufacturing electron-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5300193B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102151586B (en) * | 2011-05-13 | 2013-04-24 | 天津大学 | Method for preparing thermal-instability material supported catalyst by using low-temperature plasma and application of catalyst |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289086A (en) * | 2001-03-27 | 2002-10-04 | Canon Inc | Electron emitting element, electron source, image forming device and manufacturing method for electron emitting element |
| JP4680406B2 (en) * | 2001-04-06 | 2011-05-11 | 双葉電子工業株式会社 | Double-sided fluorescent light emitting device |
| JP3768937B2 (en) * | 2001-09-10 | 2006-04-19 | キヤノン株式会社 | Electron emitting device, electron source, and manufacturing method of image display device |
| US7767185B2 (en) * | 2003-09-30 | 2010-08-03 | Nec Corporation | Method of producing a carbon nanotube and a carbon nanotube structure |
| KR100682864B1 (en) * | 2005-02-19 | 2007-02-15 | 삼성에스디아이 주식회사 | Method of preparing catalyst layer for synthesis of carbon nanotubes and method of synthesizing carbon nanotubes using the same |
| JP2006286622A (en) * | 2005-03-09 | 2006-10-19 | Sonac Kk | Electric field electron emission material and its manufacturing method |
-
2006
- 2006-12-15 JP JP2006338696A patent/JP5300193B2/en not_active Expired - Fee Related
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