JP2007287969A - Substrate supporter for substrate annealing apparatus - Google Patents

Substrate supporter for substrate annealing apparatus Download PDF

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JP2007287969A
JP2007287969A JP2006114330A JP2006114330A JP2007287969A JP 2007287969 A JP2007287969 A JP 2007287969A JP 2006114330 A JP2006114330 A JP 2006114330A JP 2006114330 A JP2006114330 A JP 2006114330A JP 2007287969 A JP2007287969 A JP 2007287969A
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substrate
substrate support
holding plate
annealing apparatus
horizontal holding
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Terumasa Ishihara
照正 石原
Masayuki Mizuno
昌幸 水野
Koji Hashimoto
孝治 橋本
Masaru Morita
勝 森田
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IHI Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate supporter for a substrate annealing apparatus which can support horizontally a large-sized substrate (e.g., not smaller than one meter square), and can follow the displacement caused by the heating and cooling of the substrate, and further, can reduce largely the generation of the scratches (micro scratches) caused by its sliding on the surface of the substrate. <P>SOLUTION: The substrate supporter 10 for a substrate annealing apparatus has a flat-plate-form substrate 1 supported horizontally and has a heater 5 positioned above the substrate and for heating the top surface of the substrate by its radiating heat. Further, the substrate supporter 10 comprises a plurality of substrate supporting rods 12 extended downward and for supporting the rear surface of the substrate by their upper surfaces, and comprises a horizontal holding plate 14 for so holding the plurality of substrate supporting rods that their upper surfaces follow the displacement of the substrate 1 as their upper surfaces contact with the rear surfaces of the substrate and that their lower ends are made displace-able. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、熱処理炉内にガラス基板等の基板を搬入してアニールする基板アニール装置用の基板支持装置に関する。   The present invention relates to a substrate support apparatus for a substrate annealing apparatus that carries in and anneals a substrate such as a glass substrate in a heat treatment furnace.

半導体デバイスの製造工程において、ランプアニール装置やＣＶＤ装置のように、熱処理炉内へ基板、例えば半導体ウエハを１枚ずつ搬入し基板に光を照射するなどしてウエハを加熱し熱処理する装置が知られている（例えば、特許文献１）。   In a semiconductor device manufacturing process, an apparatus that heats and heats a wafer, such as a lamp annealing apparatus or a CVD apparatus, carries a substrate, for example, a semiconductor wafer one by one into a heat treatment furnace and irradiates the substrate with light. (For example, Patent Document 1).

図５は、特許文献１に開示された従来のランプアニール装置の概略構成を示す模式的断面図である。この図において、５０は熱処理炉。５２は光入射窓、５４はウエハ支持リング、５６はウエハ支持円筒ホルダ、５８はランプハウス、６０はランプ、６２はリフレクタ、６４はシャッター板である。   FIG. 5 is a schematic cross-sectional view showing a schematic configuration of a conventional lamp annealing apparatus disclosed in Patent Document 1. As shown in FIG. In this figure, 50 is a heat treatment furnace. 52 is a light incident window, 54 is a wafer support ring, 56 is a wafer support cylindrical holder, 58 is a lamp house, 60 is a lamp, 62 is a reflector, and 64 is a shutter plate.

半導体ウエハＷは、図示しない開口を通して熱処理炉５０内に搬入され、ウエハ支持リング５４上に水平に支持される。シャッター板６４は、図示しない支持・移動機構により、水平方向へ移動可能に支持されており、光入射窓５２とランプハウス５８の間に位置する「作動位置」とその間から外れた「退避位置」との間を移動する。このシャッター板６４は、ウエハＷの熱処理が終了してランプ６０への電力供給が停止する際に、退避位置から作動位置に高速で移動し、ランプ６０の消灯直後の余熱によるウエハＷへの熱輻射を遮断し、ウエハＷの温度を速やかに降下させるようになっている。   The semiconductor wafer W is carried into the heat treatment furnace 50 through an opening (not shown) and supported horizontally on the wafer support ring 54. The shutter plate 64 is supported by a support / moving mechanism (not shown) so as to be movable in the horizontal direction. The “operating position” located between the light incident window 52 and the lamp house 58 and the “retracted position” deviated therebetween. Move between. The shutter plate 64 moves at high speed from the retracted position to the operating position when the power supply to the lamp 60 is stopped after the heat treatment of the wafer W is finished, and heat to the wafer W due to residual heat immediately after the lamp 60 is turned off. The radiation is blocked and the temperature of the wafer W is quickly lowered.

また、上述したような熱処理炉内で基板を支持する手段として、（１）基板周辺を石英ロッドやセラミックボール等で支持する、（２）石英製基板セッタ（平面板）上に基板を載せる、等が従来行われていたが、これらの支持手段では、熱処理過程の基板収縮や変形時に基板と支持材が擦れて基板に傷（マイクロスクラッチ）が生じる問題があった。   Further, as means for supporting the substrate in the heat treatment furnace as described above, (1) the periphery of the substrate is supported by a quartz rod, a ceramic ball or the like, and (2) the substrate is placed on a quartz substrate setter (planar plate). However, these support means have a problem that the substrate and the support material are rubbed when the substrate contracts or deforms during the heat treatment process, and the substrate is scratched (micro scratch).

そこで、この問題を解決するために、いくつかの基板支持手段が既に提案されている（例えば特許文献２）。   In order to solve this problem, several substrate support means have already been proposed (for example, Patent Document 2).

特許文献２の熱処理基板用支持具は、図６に示すように、支持板７３と支持板７３上に立設された複数の支持部材７４を有し、基板７２の下面を複数の支持部材７４の上端縁に載せて基板７２を水平に支持するように構成され、複数の支持部材７４が弾性変形可能な複数本の線材７４ａにより構成されたものである。   As shown in FIG. 6, the heat treatment substrate support of Patent Document 2 includes a support plate 73 and a plurality of support members 74 erected on the support plate 73, and the lower surface of the substrate 72 is disposed on the plurality of support members 74. The plurality of support members 74 are configured by a plurality of wire rods 74a that can be elastically deformed.

特開２００３−２８２４７０号公報、「基板の熱処理装置」Japanese Patent Application Laid-Open No. 2003-282470, “Substrate Heat Treatment Apparatus” 特開２００２−１００６６８号公報、「熱処理基板用支持具」JP 2002-1000066, “Heat-treating substrate support”

基板アニール装置のような熱処理炉では、基板（例えばガラス基板）は、昇温、定常温度保持、降温の各熱処理工程を受け、加熱時に熱膨張し、冷却時に熱収縮する。
また、大型の基板（例えば１ｍ四方以上）では、基板各部の温度が相違し、相対的に面内又は面外で変位する。特に、基板材料の変質が生じる直前の温度域において、基板は比較的大きな数〜十数ミクロンの収縮、変形を起こす。
このような基板の水平変位、膨張・収縮、変形時において、従来の基板支持具では、基板支持具が基板の変位（水平変位、膨張・収縮、変形等）に追従できないため、基板と基板支持具の接触部との間に滑りが生じ、基板表面（下面）に小さな擦り傷（マイクロスクラッチ）を発生させていた。
このようなマイクロスクラッチは、半導体ウエハ等を対象とする高品質な基板では、後工程において製品の歩留まり低下の要因となるため、大幅に低減することが要望されていた。 In a heat treatment furnace such as a substrate annealing apparatus, a substrate (for example, a glass substrate) undergoes heat treatment steps of temperature rise, steady temperature maintenance, and temperature fall, and thermally expands when heated and shrinks when cooled.
Further, in a large substrate (for example, 1 m square or more), the temperature of each part of the substrate is different and relatively displaces in or out of the plane. In particular, in the temperature range immediately before the deterioration of the substrate material occurs, the substrate contracts and deforms by a relatively large number of several to several tens of microns.
During such horizontal displacement, expansion / contraction, and deformation of the substrate, the conventional substrate support tool cannot follow the displacement (horizontal displacement, expansion / contraction, deformation, etc.) of the substrate. Slip occurred between the contact portion of the tool and a small scratch (micro scratch) was generated on the substrate surface (lower surface).
Such micro scratches have been demanded to be greatly reduced on a high-quality substrate intended for semiconductor wafers and the like because it causes a decrease in product yield in a later process.

上述した（１）の基板周辺を石英ロッドやセラミックボール等で支持する手段では、基板にたわみが生じるために、大型の基板（例えば１ｍ四方以上）を水平に支持することができない。
また、（２）の石英製基板セッタ（平面板）上に基板を載せる手段では、大型の基板の水平支持はできるが、セッタの存在により、基板の急速加熱や急速冷却はできない。また、セッタとの接触箇所が広いため、基板全面がセッタと擦れて基板全面に傷（マイクロスクラッチ）が生じるおそれがある。
さらに、例えば特許文献２の支持具では、高温（例えば約７５０℃前後）において弾性変形可能な支持部材の製作が困難である問題点があった。 With the above-mentioned means for supporting the periphery of the substrate (1) with a quartz rod, a ceramic ball or the like, since the substrate is bent, a large substrate (for example, 1 m square or more) cannot be supported horizontally.
Further, with the means (2) for placing a substrate on a quartz substrate setter (planar plate), a large substrate can be supported horizontally, but due to the presence of the setter, the substrate cannot be heated or cooled rapidly. Further, since the contact portion with the setter is wide, the entire surface of the substrate may be rubbed against the setter and scratches (micro scratches) may be generated on the entire surface of the substrate.
Furthermore, for example, the support of Patent Document 2 has a problem that it is difficult to manufacture a support member that can be elastically deformed at a high temperature (for example, about 750 ° C.).

本発明は、上述した問題点を解決するために創案されたものである。すなわち本発明の目的は、大型の基板（例えば１ｍ四方以上）を水平に支持することができ、基板の加熱・冷却による変位に追従でき、基板表面との滑りによる傷（マイクロスクラッチ）の発生を大幅に低減することができる基板アニール装置用の基板支持装置を提供することにある。   The present invention has been developed to solve the above-described problems. That is, the object of the present invention is to support a large substrate (for example, 1 m square or more) horizontally, follow the displacement due to heating / cooling of the substrate, and generate scratches (micro scratches) due to sliding with the substrate surface. It is an object of the present invention to provide a substrate support apparatus for a substrate annealing apparatus that can be significantly reduced.

本発明によれば、水平に支持された平板状の基板と、該基板の上方に位置し基板上面を輻射熱で加熱するヒータとを有する基板アニール装置用の基板支持装置であって、
該基板支持装置は、上面で基板下面を支持し下方に延びる複数の基板支持棒と、
該基板支持棒の上面が基板下面に接したまま基板の変位に追従するように、複数の基板支持棒の下端を変位可能に保持する水平保持板とからなる、ことを特徴とする基板アニール装置用の基板支持装置が提供される。 According to the present invention, there is provided a substrate support apparatus for a substrate annealing apparatus having a flat substrate that is horizontally supported and a heater that is positioned above the substrate and that heats the upper surface of the substrate with radiant heat,
The substrate support device includes a plurality of substrate support bars that support the lower surface of the substrate on the upper surface and extend downward,
A substrate annealing apparatus comprising: a horizontal holding plate that holds the lower ends of a plurality of substrate support rods in a displaceable manner so as to follow the displacement of the substrate while the upper surface of the substrate support rod is in contact with the lower surface of the substrate. A substrate support apparatus is provided.

本発明の好ましい実施形態によれば、前記水平保持板は、互いに間隔を隔てた複数の取り付け孔を有する水平な固定平板であり、
前記基板支持棒は、前記取り付け孔に隙間をもって嵌合する下向き突起部と、該突起部の上方に位置し水平保持板の上面に接する下面を有する鍔部と、該鍔部から上方に延びる細長いロッド部とからなり、
前記ロッド部の上面は、基板との接触応力が所定の許容応力以下になるように十分大きな円弧面に形成されている。 According to a preferred embodiment of the present invention, the horizontal holding plate is a horizontal fixed plate having a plurality of mounting holes spaced from each other.
The substrate support bar includes a downward projection that fits in the mounting hole with a gap, a flange having a lower surface positioned above the projection and in contact with the upper surface of the horizontal holding plate, and an elongated shape extending upward from the flange. It consists of a rod part,
The upper surface of the rod portion is formed in a sufficiently large circular arc surface so that the contact stress with the substrate is not more than a predetermined allowable stress.

前記水平保持板は、取り付け孔の上隅部にテーパ部を有し、
前記鍔部の下面は、該テーパ部よりわずかに大きい水平円板である、ことが好ましい。 The horizontal holding plate has a tapered portion at the upper corner of the mounting hole,
The lower surface of the flange portion is preferably a horizontal disk that is slightly larger than the tapered portion.

また、別の実施形態によれば、前記水平保持板は、取り付け孔の上隅部に下方に凸の円弧面を有し、
前記鍔部の下面は、該円弧面と嵌合する下方に凸の円弧面を有する。 According to another embodiment, the horizontal holding plate has a downwardly convex arc surface at the upper corner of the mounting hole,
The lower surface of the flange has a downwardly projecting arc surface that fits with the arc surface.

前記基板支持棒は、石英、セラミック、又はその他の耐熱材料からなる、ことが好ましい。   The substrate support rod is preferably made of quartz, ceramic, or other heat resistant material.

上記本発明の構成によれば、基板支持棒の下端が水平保持板で保持されているので、基板の中央部を含む任意の複数の箇所を、複数の基板支持棒で支持でき、大型の基板（例えば１ｍ四方以上）であってもそのたわみを防止して水平に支持することができる。
また、水平保持板は、基板支持棒の上面が基板下面に接したまま基板の変位に追従するように、複数の基板支持棒の下端を変位可能に保持するので、熱処理中の基板の収縮や変形にあわせて支持部材が追従して、基板と支持部材の擦れを最小限にできる。
これにより、基板の加熱・冷却による変位に容易に追従でき、基板表面との滑りによる傷（マイクロスクラッチ）の発生を大幅に低減することができる。 According to the configuration of the present invention, since the lower end of the substrate support bar is held by the horizontal holding plate, a plurality of arbitrary positions including the central portion of the substrate can be supported by the plurality of substrate support bars, and the large substrate Even if it is (for example, 1 m square or more), the deflection can be prevented and it can be supported horizontally.
In addition, the horizontal holding plate holds the lower ends of the plurality of substrate support rods so that they can follow the displacement of the substrate while the upper surface of the substrate support rod is in contact with the lower surface of the substrate. The support member follows the deformation and the friction between the substrate and the support member can be minimized.
Thereby, it is possible to easily follow displacement due to heating / cooling of the substrate, and it is possible to greatly reduce the occurrence of scratches (micro scratches) due to sliding with the substrate surface.

また、水平保持板が互いに間隔を隔てた複数の取り付け孔を有する水平な平板であり、
基板支持棒が、取り付け孔に隙間をもって嵌合する下向き突起部と、突起部の上方に位置し水平保持板の上面に接する下面を有する鍔部と、鍔部から上方に延びる細長いロッド部とからなり、
ロッド部の上面が、基板との接触応力が所定の許容応力以下になるように十分大きな円弧面に形成されている構成により、支持棒自体の固定を自由度のある状態とすることができ、支持棒の先端部はガラス基板の熱収縮による変位に伴って移動するため、結果として擦り傷を作らないようにできる。 The horizontal holding plate is a horizontal flat plate having a plurality of mounting holes spaced from each other,
The substrate support rod includes a downward projection that fits in the mounting hole with a gap, a flange having a lower surface that is located above the projection and contacts the upper surface of the horizontal holding plate, and an elongated rod that extends upward from the flange. Become
With the configuration in which the upper surface of the rod portion is formed in a sufficiently large arc surface so that the contact stress with the substrate is not more than a predetermined allowable stress, the support rod itself can be fixed with a degree of freedom. Since the tip end portion of the support rod moves in accordance with the displacement due to the thermal contraction of the glass substrate, it is possible to prevent scratches as a result.

以下、本発明の好ましい実施形態を図面を参照して説明する。なお各図において、共通する部分には同一の符号を付し、重複した説明は省略する。   Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In each figure, common portions are denoted by the same reference numerals, and redundant description is omitted.

図１は、本発明の基板支持装置を備えた基板アニール装置の全体構成図である。この図において、２は熱処理炉。３は光入射窓、４は遮熱板、５はヒータ、７は基板出入ドア、８は支持・移動機構、１０は基板支持装置である。   FIG. 1 is an overall configuration diagram of a substrate annealing apparatus provided with a substrate support apparatus of the present invention. In this figure, 2 is a heat treatment furnace. 3 is a light incident window, 4 is a heat shield, 5 is a heater, 7 is a substrate door, 8 is a support / movement mechanism, and 10 is a substrate support device.

平板状の基板１は、例えばガラス基板であり、開閉可能な基板出入ドア７を通して熱処理炉２内に搬入され、基板支持装置１０の上に水平に支持される。
ヒータ５は、例えば電気ヒータ、加熱ランプ等であり、基板１の上方に位置し、基板１の上面を輻射熱で加熱する。このヒータ５は、例えば基板１の急速加熱のため、ヒータ側温度が高温（例えば約７５０℃前後）となっている。
遮熱板４は、支持・移動機構８により、水平方向へ移動可能に支持されており、基板１とヒータ５との間を遮蔽する遮蔽位置（図でＣ方向）とその間から外れた開放位置（図でＯ方向）との間を水平移動可能に構成されている。
この構成により、遮熱板４は、基板１の熱処理が終了した際に、開放位置から遮蔽位置に高速で移動し、基板とヒータとの間を遮蔽して基板１の温度を速やかに降下させることができる。 The flat substrate 1 is, for example, a glass substrate, is carried into the heat treatment furnace 2 through an openable / closable substrate entrance door 7, and is supported horizontally on the substrate support device 10.
The heater 5 is, for example, an electric heater, a heating lamp, or the like, and is positioned above the substrate 1 and heats the upper surface of the substrate 1 with radiant heat. The heater 5 has a high temperature on the heater side (for example, about 750 ° C.) due to, for example, rapid heating of the substrate 1.
The heat shield 4 is supported by a support / moving mechanism 8 so as to be movable in the horizontal direction, and a shielding position (direction C in the figure) that shields between the substrate 1 and the heater 5 and an open position that is out of the shielding position. (The O direction in the figure) is configured to be horizontally movable.
With this configuration, when the heat treatment of the substrate 1 is completed, the heat shield plate 4 moves at high speed from the open position to the shield position, shields the space between the substrate and the heater, and quickly lowers the temperature of the substrate 1. be able to.

この基板アニール装置において、基板１は、例えば、昇温、定常温度保持、降温の各熱処理工程を受け、加熱時に熱膨張し、冷却時に熱収縮する。基板の加熱温度は、例えば常温から約７５０℃前後の範囲である。
また、同時に、基板支持装置１０も加熱時に熱膨張し、冷却時に熱収縮する。基板支持装置１０の加熱温度も、同様に例えば常温から約７５０℃前後の範囲である。
なお、本発明の基板支持装置１０は、上述した基板アニール装置に限定されず、その他の熱処理炉にも適用することができる。 In this substrate annealing apparatus, the substrate 1 undergoes, for example, heat treatment steps of temperature rise, steady temperature holding, and temperature drop, and thermally expands during heating and shrinks when cooled. The heating temperature of the substrate is, for example, in the range from room temperature to about 750 ° C.
At the same time, the substrate support apparatus 10 also thermally expands when heated and shrinks when cooled. Similarly, the heating temperature of the substrate support apparatus 10 is, for example, in the range from room temperature to about 750 ° C.
The substrate support apparatus 10 of the present invention is not limited to the above-described substrate annealing apparatus, and can be applied to other heat treatment furnaces.

図２は、本発明の基板支持装置の構成図であり、図３はその部分拡大図である。図２及び図３において、本発明の基板支持装置１０は、複数の基板支持棒１２と水平保持板１４からなる。   FIG. 2 is a configuration diagram of the substrate support apparatus of the present invention, and FIG. 3 is a partially enlarged view thereof. 2 and 3, the substrate support apparatus 10 of the present invention includes a plurality of substrate support bars 12 and a horizontal holding plate 14.

基板支持棒１２は、大型の基板１（例えば１ｍ四方以上）のたわみを防止して水平に支持できるように、基板の中央部を含む任意の複数の箇所に配置されている。基板支持棒１２は、全体が一体であり、使用状態における加熱温度に耐えるように、石英、セラミック、又はその他の耐熱材料からなるのが好ましい。   The board | substrate support bar 12 is arrange | positioned in arbitrary several places including the center part of a board | substrate so that the deflection | deviation of the large sized board | substrate 1 (for example, 1 m square or more) can be prevented and supported horizontally. The substrate support rod 12 is preferably integrated as a whole and is made of quartz, ceramic, or other heat-resistant material so as to withstand the heating temperature in use.

水平保持板１４は、基板支持棒１２の配置に対応した、互いに間隔を隔てた複数の取り付け孔１４ａを有する水平な固定平板である。また水平保持板１４は、基板支持棒１２の上面が基板下面に接したまま基板１の変位に追従するように、複数の基板支持棒１２の下端を変位可能に保持する。水平保持板１４は、この例では、取り付け孔１４ａの上隅部にテーパ部１４ｂを有する。
水平保持板１４は、好ましくは１枚の板であり、使用状態における加熱温度に耐えるように、複合炭素材料（カーボンコンポジット材）、例えば高温耐酸化コーティングを有するＣ／Ｃコンポジット材であるのがよい。なお、使用状態における加熱温度に耐える限りで、金属板でもよい。 The horizontal holding plate 14 is a horizontal fixed plate having a plurality of mounting holes 14 a spaced from each other, corresponding to the arrangement of the substrate support rods 12. Further, the horizontal holding plate 14 holds the lower ends of the plurality of substrate support bars 12 in a displaceable manner so as to follow the displacement of the substrate 1 while the upper surface of the substrate support bars 12 is in contact with the lower surface of the substrate. In this example, the horizontal holding plate 14 has a tapered portion 14b at the upper corner of the mounting hole 14a.
The horizontal holding plate 14 is preferably a single plate, and is a composite carbon material (carbon composite material), for example, a C / C composite material having a high-temperature oxidation-resistant coating so as to withstand the heating temperature in use. Good. A metal plate may be used as long as it can withstand the heating temperature in use.

図３において、基板支持棒１２は、下向き突起部１２ａ、鍔部１２ｂ、および細長いロッド部１２ｃとからなる。   In FIG. 3, the substrate support rod 12 includes a downward projecting portion 12a, a flange portion 12b, and an elongated rod portion 12c.

下向き突起部１２ａは、水平保持板１４に設けられた取り付け孔１４ａに隙間をもって嵌合する。この隙間は、使用状態における加熱温度において、基板支持棒の上面が基板下面に接したまま基板１の変位（水平、傾き）に追従できる大きさに設定する。なお、下向き突起部１２ａは、この例では円柱形であるが、本発明はこれに限定されず、円錐形、切頭円錐形、球形、その他でもよい。   The downward projecting portion 12a is fitted into a mounting hole 14a provided in the horizontal holding plate 14 with a gap. This gap is set to a size that can follow the displacement (horizontal, tilt) of the substrate 1 while the upper surface of the substrate support bar is in contact with the lower surface of the substrate at the heating temperature in use. In this example, the downward projecting portion 12a has a cylindrical shape, but the present invention is not limited to this, and may be a conical shape, a truncated conical shape, a spherical shape, or the like.

鍔部１２ｂは、下向き突起部１２ａの上方に位置し、水平保持板１４の上面に接する下面を有する。鍔部１２ｂの下面は、この例では、テーパ部１４ｂの直径よりわずかに大きい水平円板である。   The flange 12b is positioned above the downward projection 12a and has a lower surface that contacts the upper surface of the horizontal holding plate 14. In this example, the lower surface of the flange portion 12b is a horizontal disk that is slightly larger than the diameter of the tapered portion 14b.

細長いロッド部１２ｃは、鍔部１２ｂから上方に延びる。ロッド部１２ｃの断面形状は、この例では円形（直径約２ｍｍ）であるが、矩形、その他の形状でもよい。また、その長さは、この例では３０〜４０ｍｍである。ロッド部１２ｃの長さは、基板支持棒の上面が基板下面に接したまま基板１の変位（水平、傾き）に追従でき、かつ基板１の搬入・搬出に適した長さに設定する。
また、ロッド部１２ｃの上面は、基板１との接触応力が所定の許容応力以下になるように十分大きな円弧面（例えば、１０Ｒ以上）に形成されている。 The elongated rod portion 12c extends upward from the flange portion 12b. In this example, the cross-sectional shape of the rod portion 12c is circular (diameter of about 2 mm), but may be rectangular or other shapes. Moreover, the length is 30-40 mm in this example. The length of the rod portion 12c is set to a length that can follow the displacement (horizontal and tilt) of the substrate 1 while the upper surface of the substrate support bar is in contact with the lower surface of the substrate and is suitable for loading and unloading the substrate 1.
Further, the upper surface of the rod portion 12c is formed in a sufficiently large circular arc surface (for example, 10R or more) so that the contact stress with the substrate 1 is not more than a predetermined allowable stress.

上述した本発明の構成によれば、複数の基板支持棒１２の下端が水平保持板１４で保持されているので、基板１の中央部を含む任意の複数の箇所を、複数の基板支持棒１２で支持でき、大型の基板（例えば１ｍ四方以上）であってもそのたわみを防止して水平に支持することができる。
また、水平保持板１４は、基板支持棒１２の上面が基板下面に接したまま基板１の変位に追従するように、基板支持棒１２の下端を変位可能に保持するので、熱処理中の基板の収縮や変形にあわせて支持部材が追従して、基板と支持部材の擦れを最小限にできる。
これにより、基板の加熱・冷却による変位に容易に追従でき、基板表面との滑りによる傷（マイクロスクラッチ）の発生を大幅に低減することができる。 According to the configuration of the present invention described above, since the lower ends of the plurality of substrate support bars 12 are held by the horizontal holding plate 14, any plurality of locations including the central portion of the substrate 1 can be placed at the plurality of substrate support bars 12. Even a large substrate (for example, 1 m square or more) can be supported horizontally by preventing its deflection.
Further, the horizontal holding plate 14 holds the lower end of the substrate support rod 12 so that the lower end of the substrate support rod 12 can be displaced so that the upper surface of the substrate support rod 12 is in contact with the lower surface of the substrate 1. The support member follows in accordance with the shrinkage and deformation, and the friction between the substrate and the support member can be minimized.
Thereby, it is possible to easily follow displacement due to heating / cooling of the substrate, and it is possible to greatly reduce the occurrence of scratches (micro scratches) due to sliding with the substrate surface.

また、図３の構成により、支持棒自体の固定を自由度のある状態とすることができ、支持棒の先端部はガラス基板の熱収縮による変位に伴って移動するため、結果として擦り傷を作らないようにできる。   Further, with the configuration of FIG. 3, the support rod itself can be fixed with a degree of freedom, and the tip of the support rod moves in accordance with the displacement due to the thermal contraction of the glass substrate. I can not.

図４は、本発明の別の実施形態を示す、図３と同様の図である。
この例において、水平保持板１４は、取り付け孔１４ａの上隅部に下方に凸の円弧面１５ｂを有する。
また基板支持棒１２は、下向き突起部１２ａ、鍔部１３ｂ、および細長いロッド部１２ｃとからなる。 FIG. 4 is a view similar to FIG. 3 showing another embodiment of the present invention.
In this example, the horizontal holding plate 14 has a downwardly convex arcuate surface 15b at the upper corner of the mounting hole 14a.
The substrate support rod 12 includes a downward projecting portion 12a, a flange portion 13b, and an elongated rod portion 12c.

鍔部１３ｂは、突起部１２ａの上方に位置し、水平保持板１４の上面に接する下面を有する。鍔部１３ｂの下面は、この例では、円弧面１５ｂと嵌合する下方に凸の円弧面を有する。
なおこの例において、ロッド部１２ｃの上面の円弧面と鍔部１３ｂの下面の円弧面１５ｂは、その間の高さの半分を半径とする円弧面（例えば、約１５〜２０ｍｍＲ）であるのがよい。
その他の構成は、図３と同様である。 The flange portion 13b is located above the protruding portion 12a and has a lower surface in contact with the upper surface of the horizontal holding plate 14. In this example, the lower surface of the flange portion 13b has a downwardly convex arc surface that fits with the arc surface 15b.
In this example, the arc surface on the upper surface of the rod portion 12c and the arc surface 15b on the lower surface of the flange portion 13b are preferably arc surfaces (for example, about 15 to 20 mmR) having a radius half the height therebetween. .
Other configurations are the same as those in FIG.

上述した図４の構成によれば、下向き突起部１２ａと取り付け孔１４ａの隙間で許容される範囲で基板支持棒１２が傾斜しても、基板支持棒１２の上面から鍔部１３ｂの下面までの距離（高さ）が変化しないので、基板支持棒１２の上面が基板下面に接したまま基板１の変位に追従するように、基板支持棒１２の下端を変位可能に保持することができる。   According to the configuration of FIG. 4 described above, even if the substrate support bar 12 is tilted within the range allowed by the gap between the downward projection 12a and the mounting hole 14a, the upper surface of the substrate support bar 12 to the lower surface of the flange 13b. Since the distance (height) does not change, the lower end of the substrate support rod 12 can be held displaceably so as to follow the displacement of the substrate 1 while the upper surface of the substrate support rod 12 is in contact with the lower surface of the substrate.

なお、本発明は、上述した実施形態に限定されず、本発明の要旨を逸脱しない範囲で種々に変更することができることは勿論である。   In addition, this invention is not limited to embodiment mentioned above, Of course, it can change variously in the range which does not deviate from the summary of this invention.

本発明の基板支持装置を備えた基板アニール装置の全体構成図である。It is a whole block diagram of the substrate annealing apparatus provided with the substrate support apparatus of this invention. 本発明の基板支持装置の構成図である。It is a block diagram of the board | substrate support apparatus of this invention. 図２の部分拡大図である。FIG. 3 is a partially enlarged view of FIG. 2. 本発明の別の実施形態を示す図である。It is a figure which shows another embodiment of this invention. 特許文献１に開示された従来のランプアニール装置の概略構成を示す模式的断面図である。It is typical sectional drawing which shows schematic structure of the conventional lamp annealing apparatus disclosed by patent document 1. FIG. 特許文献２の熱処理基板用支持具の構成図である。It is a block diagram of the support tool for heat processing substrates of patent document 2. FIG.

符号の説明Explanation of symbols

１ 基板（ガラス基板）、２ 熱処理炉、３ 光入射窓、
４ 遮熱板、５ ヒータ、
７ 基板出入ドア、８ 支持・移動機構、
１０ 基板支持装置、１２ 基板支持棒、
１２ａ 下向き突起部、１２ｂ 鍔部、１２ｃ ロッド部、１３ｂ 鍔部、
１４ 水平保持板、１４ａ 取り付け孔、１４ｂ テーパ部、
１５ｂ 円弧面
1 substrate (glass substrate), 2 heat treatment furnace, 3 light entrance window,
4 heat shield, 5 heater,
7 PCB door, 8 Support / movement mechanism,
10 substrate support device, 12 substrate support rod,
12a downward projection, 12b collar, 12c rod, 13b collar,
14 horizontal holding plate, 14a mounting hole, 14b taper part,
15b Arc surface

Claims (5)

水平に支持された平板状の基板と、該基板の上方に位置し基板上面を輻射熱で加熱するヒータとを有する基板アニール装置用の基板支持装置であって、
該基板支持装置は、上面で基板下面を支持し下方に延びる複数の基板支持棒と、
該基板支持棒の上面が基板下面に接したまま基板の変位に追従するように、複数の基板支持棒の下端を変位可能に保持する水平保持板とからなる、ことを特徴とする基板アニール装置用の基板支持装置。 A substrate support apparatus for a substrate annealing apparatus, comprising a flat substrate that is horizontally supported and a heater that is positioned above the substrate and that heats the upper surface of the substrate with radiant heat,
The substrate support device includes a plurality of substrate support bars that support the lower surface of the substrate on the upper surface and extend downward,
A substrate annealing apparatus comprising: a horizontal holding plate that holds the lower ends of a plurality of substrate support rods in a displaceable manner so as to follow the displacement of the substrate while the upper surface of the substrate support rod is in contact with the lower surface of the substrate. Substrate support device. 前記水平保持板は、互いに間隔を隔てた複数の取り付け孔を有する水平な固定平板であり、
前記基板支持棒は、前記取り付け孔に隙間をもって嵌合する下向き突起部と、該突起部の上方に位置し水平保持板の上面に接する下面を有する鍔部と、該鍔部から上方に延びる細長いロッド部とからなり、
前記ロッド部の上面は、基板との接触応力が所定の許容応力以下になるように十分大きな円弧面に形成されている、ことを特徴とする請求項１に記載の基板アニール装置用の基板支持装置。 The horizontal holding plate is a horizontal fixed plate having a plurality of mounting holes spaced from each other,
The substrate support bar includes a downward projection that fits in the mounting hole with a gap, a flange having a lower surface positioned above the projection and in contact with the upper surface of the horizontal holding plate, and an elongated shape extending upward from the flange. It consists of a rod part,
2. The substrate support for a substrate annealing apparatus according to claim 1, wherein the upper surface of the rod portion is formed in a sufficiently large arc surface so that a contact stress with the substrate is equal to or less than a predetermined allowable stress. apparatus. 前記水平保持板は、取り付け孔の上隅部にテーパ部を有し、
前記鍔部の下面は、該テーパ部よりわずかに大きい水平円板である、ことを特徴とする請求項２に記載の基板アニール装置用の基板支持装置。 The horizontal holding plate has a tapered portion at the upper corner of the mounting hole,
3. The substrate support apparatus for a substrate annealing apparatus according to claim 2, wherein the lower surface of the flange portion is a horizontal disk that is slightly larger than the tapered portion. 前記水平保持板は、取り付け孔の上隅部に下方に凸の円弧面を有し、
前記鍔部の下面は、該円弧面と嵌合する下方に凸の円弧面を有する、ことを特徴とする請求項２に記載の基板アニール装置用の基板支持装置。 The horizontal holding plate has a downwardly convex arc surface at the upper corner of the mounting hole,
The substrate support apparatus for a substrate annealing apparatus according to claim 2, wherein a lower surface of the flange portion has a downwardly projecting arc surface that is fitted to the arc surface. 前記基板支持棒は、石英、セラミック、又はその他の耐熱材料からなる、ことを特徴とする請求項１に記載の基板アニール装置用の基板支持装置。
The substrate support apparatus for a substrate annealing apparatus according to claim 1, wherein the substrate support rod is made of quartz, ceramic, or other heat resistant material.
JP2006114330A 2006-04-18 2006-04-18 Substrate supporter for substrate annealing apparatus Pending JP2007287969A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194066A (en) * 2008-02-13 2009-08-27 Canon Anelva Engineering Corp Heating apparatus
WO2016068069A1 (en) * 2014-10-30 2016-05-06 日本電気硝子株式会社 Glass base plate heat processing method and glass base plate production method
CN106340487A (en) * 2016-10-21 2017-01-18 北京鼎泰芯源科技发展有限公司 Wafer carrying plate for wafer annealing, annealing apparatus and wafer annealing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194066A (en) * 2008-02-13 2009-08-27 Canon Anelva Engineering Corp Heating apparatus
JP4520512B2 (en) * 2008-02-13 2010-08-04 キヤノンアネルバ株式会社 Heating device
WO2016068069A1 (en) * 2014-10-30 2016-05-06 日本電気硝子株式会社 Glass base plate heat processing method and glass base plate production method
CN106340487A (en) * 2016-10-21 2017-01-18 北京鼎泰芯源科技发展有限公司 Wafer carrying plate for wafer annealing, annealing apparatus and wafer annealing method

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