JP2008066610A - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
- Publication number
- JP2008066610A JP2008066610A JP2006244964A JP2006244964A JP2008066610A JP 2008066610 A JP2008066610 A JP 2008066610A JP 2006244964 A JP2006244964 A JP 2006244964A JP 2006244964 A JP2006244964 A JP 2006244964A JP 2008066610 A JP2008066610 A JP 2008066610A
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- Prior art keywords
- solder
- diffusion plate
- conductive film
- heat diffusion
- semiconductor chip
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Abstract
熱拡散板上面とはんだ接続される下面及びリードとはんだ接続される上面を有する半導体素子を備えた半導体モジュールにおいて、はんだのリフロー時における半導体素子及びリードの熱拡散板上面に対する位置ずれを抑止する。
【解決手段】
本発明による半導体モジュールは、実装基板主面に離間して設けられた第一導電膜と第二導電膜、前記第一導電膜の上面にはんだ接続される熱拡散板、前記熱拡散板上面にはんだ接続される半導体素子、前記第二導電膜に一端が且つ前記半導体素子に他端が夫々はんだ接続されるリードを備え、前記熱拡散板上面の前記半導体素子がはんだ接続される接合領域の外周には当該接合領域より突き出た突出部が形成されて、はんだ接続工程における前記熱拡散板上面内での半導体チップの回転を当該突出部で抑える。
【選択図】 図1
Description
前記第一導電膜の上面と前記半導体素子の下面との間には金属または合金からなる熱拡散板が設けられ、
前記熱拡散板に突起が形成されたことを特徴とする半導体モジュール。
前記第一導電膜上面と前記半導体素子の下面との間には金属または合金からなる熱拡散板が設けられており前記熱拡散板上面の前記半導体素子の下面が接合される接合領域より該熱拡散板の上面の端部に近い周縁領域には該接合領域より突き出た突出部が形成されていることを特徴とする熱拡散板および前記熱拡散板を有する半導体モジュール。
金属基板(実装基板)4のリードフレーム2搭載領域および熱拡散板3搭載領域となる金属板44の主面に、第一導電膜41及び第二導電膜42が樹脂絶縁層43により夫々接続される。次に第一導電膜41の上面にはんだ102が、第二導電膜42上にはんだ103が、はんだペースト、はんだシート、はんだめっきなどで夫々供給される。はんだ102,103の供給方法は、印刷法、はんだシートの搭載、めっき法などのいずれでもよい。第一導電膜41、第二導電膜42、及び金属板44は、アルミニウム、ニッケル、鉄や銅などの金属もしくは合金からなる。はんだ材として、例えばSn−3Ag−0.5Cuはんだに代表される鉛フリーはんだを用いると良い。このように形成した第一導電膜41上のはんだ102に熱拡散板3を搭載する。熱拡散板3の形状の一例を図7に示す。
Claims (8)
- 第一導電膜と第二導電膜とが互いに離されて形成された主面を有する基板、前記第一導電膜の上面上に配置され且つ該第一導電膜と電気的に接続された半導体素子、および前記第二導電膜と前記半導体素子とを電気的に接続するリードを備え、
前記第一導電膜の上面と前記半導体素子の下面との間には金属または合金からなる熱拡散板が設けられ、
前記熱拡散板に突起が形成されたことを特徴とする半導体モジュール。 - 前記熱拡散板の上面と前記半導体素子の下面とは互いに対向し、該半導体素子は該熱拡散板の上面に接合されていることを特徴とする請求項1に記載の半導体モジュール。
- 前記突起は前記熱拡散板の上面の前記半導体素子が接合される領域より該上面の端に近い位置に形成されることを特徴とする請求項2に記載の半導体モジュール。
- 前記第一導電膜の上面と前記熱拡散板の突起は前記熱拡散板の上面の前記半導体素子が接合される領域より該上面の端に近い位置に形成されることを特徴とする請求項2に記載の半導体モジュール。
- 第一導電膜と第二導電膜とが離されて形成された主面を有する基板、前記第一導電膜上に固定され且つ該第一導電膜上と電気的に接続された半導体素子、および前記第二導電膜と前記半導体素子とを電気的に接続するリードを備え、
前記第一導電膜上面と前記半導体素子の下面との間には金属または合金からなる熱拡散板が設けられており、前記熱拡散板上面の前記半導体素子の下面が接合される接合領域より該熱拡散板の上面の端部に近い周縁領域には該接合領域より突き出た突出部が形成されていることを特徴とする熱拡散板および前記熱拡散板を有する半導体モジュール。 - 前記リードと前記半導体素子および前記半導体素子と前記熱拡散板および前記熱拡散板と前記第一導電膜および前記リードと前記第二導電膜を同一なもしくは一括接続可能なはんだもしくははんだペーストにて接続したことを特徴とする請求項5記載の半導体モジュール。
- 前記熱拡散板の前記突出部以外の上面もしくは下面に突起を形成したことを特徴とする熱拡散板および前記熱拡散板を有することを特徴とする請求項5記載の半導体モジュール。
- 前記半導体モジュールの上面もしくは上面と下面の一部を充填樹脂にて覆うことを特徴とする請求項5記載の半導体モジュール。
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JP2011003832A (ja) * | 2009-06-22 | 2011-01-06 | Nippon Inter Electronics Corp | パワー半導体モジュール |
JP2012004226A (ja) * | 2010-06-15 | 2012-01-05 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2015177159A (ja) * | 2014-03-18 | 2015-10-05 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2023021928A1 (ja) * | 2021-08-19 | 2023-02-23 | ローム株式会社 | 半導体装置および点火装置 |
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DE102011115887A1 (de) * | 2011-10-15 | 2013-04-18 | Danfoss Silicon Power Gmbh | Leistungshalbleiterchip mit oberseitigen Potentialflächen |
DE102011115886B4 (de) | 2011-10-15 | 2020-06-18 | Danfoss Silicon Power Gmbh | Verfahren zur Schaffung einer Verbindung eines Leistungshalbleiterchips mit oberseitigen Potentialflächen zu Dickdrähten |
US9147631B2 (en) | 2013-04-17 | 2015-09-29 | Infineon Technologies Austria Ag | Semiconductor power device having a heat sink |
DE102015113421B4 (de) | 2015-08-14 | 2019-02-21 | Danfoss Silicon Power Gmbh | Verfahren zum Herstellen von Halbleiterchips |
US20170084521A1 (en) * | 2015-09-18 | 2017-03-23 | Industrial Technology Research Institute | Semiconductor package structure |
EP3770960A4 (en) * | 2018-03-23 | 2022-10-19 | Mitsubishi Materials Corporation | MODULE MOUNTED ON AN ELECTRONIC COMPONENT |
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JPS5740965A (en) | 1980-08-26 | 1982-03-06 | Nec Corp | Hybrid integrated circuit device |
JPS5791528A (en) * | 1980-11-28 | 1982-06-07 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS61127137A (ja) * | 1984-11-26 | 1986-06-14 | Mitsubishi Electric Corp | 半導体チツプの固着方法 |
JPH07211731A (ja) * | 1994-01-27 | 1995-08-11 | Fuji Electric Co Ltd | 半導体装置 |
ES2373092T3 (es) * | 1999-02-26 | 2012-01-31 | Valeo Equipements Electriques Moteur | Módulo eléctrico para alternador de vehículo, en particular automóvil, y conjunto que incluye tal alternador y tal módulo. |
JP3627591B2 (ja) * | 1999-10-07 | 2005-03-09 | 富士電機機器制御株式会社 | パワー半導体モジュールの製造方法 |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US6897567B2 (en) | 2000-07-31 | 2005-05-24 | Romh Co., Ltd. | Method of making wireless semiconductor device, and leadframe used therefor |
JP4136845B2 (ja) * | 2002-08-30 | 2008-08-20 | 富士電機ホールディングス株式会社 | 半導体モジュールの製造方法 |
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JP2011003832A (ja) * | 2009-06-22 | 2011-01-06 | Nippon Inter Electronics Corp | パワー半導体モジュール |
JP2012004226A (ja) * | 2010-06-15 | 2012-01-05 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2015177159A (ja) * | 2014-03-18 | 2015-10-05 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
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