JP2008060411A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
JP2008060411A
JP2008060411A JP2006236768A JP2006236768A JP2008060411A JP 2008060411 A JP2008060411 A JP 2008060411A JP 2006236768 A JP2006236768 A JP 2006236768A JP 2006236768 A JP2006236768 A JP 2006236768A JP 2008060411 A JP2008060411 A JP 2008060411A
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light emitting
semiconductor light
phosphor
emitting device
recess
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Takayoshi Fujii
孝佳 藤井
Naotada Okada
直忠 岡田
Yasuhide Okada
康秀 岡田
Tetsuo Komatsu
哲郎 小松
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wavelength-conversion semiconductor light emitting device with an improved light extraction efficiency whose wavelength-conversion is performed through a phosphor. <P>SOLUTION: The semiconductor light emitting device is provided with an outer enclosure having a first recess, a semiconductor light emitting element formed on the bottom of the first recess, a phosphor dispersion layer in which a phosphor for converting the wavelength of light radiated from the semiconductor light emitting element is dispersed, and seal resin for sealing the semiconductor light emitting element and the phosphor dispersion layer. A second recess is formed on the surface of the seal resin above the semiconductor light emitting element. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体発光装置に関し、特に、蛍光体による波長変換型の半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device, and more particularly to a wavelength conversion type semiconductor light emitting device using a phosphor.

窒化ガリウム系半導体などを用いた短波長発光型の半導体発光素子と蛍光体との組み合わせによる半導体発光装置は、その応用分野を飛躍的に拡大させている。例えば、液晶ディスプレイのバックライト、照明光源などには、紫外光から青色光の波長帯を放射する窒化ガリウム系半導体発光素子と、適正に選択された蛍光体との組み合わせにより得られる白色光が用いられる。   A semiconductor light emitting device using a combination of a short wavelength light emitting type semiconductor light emitting element using a gallium nitride based semiconductor and a phosphor has dramatically expanded its application field. For example, white light obtained by a combination of a gallium nitride semiconductor light-emitting element that emits a wavelength band from ultraviolet light to blue light and an appropriately selected phosphor is used for a backlight of a liquid crystal display, an illumination light source, etc. It is done.

このような液晶ディスプレイや照明光源用途においては、高密度実装を行うために表面実装型（ＳＭＤ：Suraface Mounting Device）の半導体発光装置が好ましい。この表面実装型半導体発光装置に適用可能であり、より高い光度を得るための技術開示例がある（例えば、特許文献１）。   In such a liquid crystal display or illumination light source application, a surface mounting type (SMD) semiconductor light emitting device is preferable for high density mounting. There is a technical disclosure example that can be applied to this surface-mounted semiconductor light-emitting device and obtains higher luminous intensity (for example, Patent Document 1).

しかしながら、半導体発光素子からの励起光が蛍光体層を通過する際に蛍光体に吸収され、励起されてより長波長の光を放射する構造においては、半導体発光素子の近傍の蛍光体層で多くの励起光が吸収される。このように波長変換された光は、半導体発光素子からみてより遠方の蛍光体層において再び吸収されてしまうため、光取り出し効率の低下を生じる問題があった。
特開２００１−１４８５１６号公報 However, in the structure in which excitation light from the semiconductor light emitting element is absorbed by the phosphor when passing through the phosphor layer and is excited and emits light having a longer wavelength, the phosphor layer near the semiconductor light emitting element is often used. Is absorbed. The light thus wavelength-converted is again absorbed in the phosphor layer farther from the semiconductor light emitting device, and there is a problem that the light extraction efficiency is lowered.
JP 2001-148516 A

本発明は、光取り出し効率が改善された、蛍光体による波長変換型の半導体発光装置を提供する。   The present invention provides a wavelength-converting semiconductor light-emitting device using a phosphor with improved light extraction efficiency.

本発明の一態様によれば、第１凹部を有する外囲器と、前記第１凹部の底面に設けられた半導体発光素子と、前記第１凹部の内側面に沿って設けられ、前記半導体発光素子からの放射光を波長変換する蛍光体が分散された蛍光体分散層と、前記半導体発光素子と前記蛍光体分散層を封止する封止樹脂と、を備え、前記封止樹脂の表面において、前記半導体発光素子の上に第２凹部が設けられたことを特徴とする半導体発光装置が提供される。   According to an aspect of the present invention, the envelope having the first recess, the semiconductor light emitting element provided on the bottom surface of the first recess, and the semiconductor light emitting device provided along the inner side surface of the first recess. A phosphor dispersion layer in which a phosphor that converts the wavelength of emitted light from the element is dispersed, and a sealing resin that seals the semiconductor light emitting element and the phosphor dispersion layer, and on the surface of the sealing resin A semiconductor light emitting device is provided, wherein a second recess is provided on the semiconductor light emitting element.

また、本発明の他の一態様によれば、第１リードと、第２リードと、前記第１リードと前記第２リードとをそれぞれ固定し、第１凹部を有する外囲器と、前記第１凹部の底に露出した前記第１リード上に接着された半導体発光素子と、前記第１凹部の底に露出した前記第２リードと前記半導体発光素子とを電気的に接続するボンディングワイヤと、前記第１凹部の内側面に沿って設けられ、前記半導体発光素子からの放射光を波長変換する蛍光体が分散された蛍光体分散層と、前記半導体発光素子と前記ボンディングワイヤと前記蛍光体分散層を封止する封止樹脂と、を備え、前記封止樹脂の表面において、前記半導体発光素子の上に第２凹部が設けられたことを特徴とする半導体発光装置が提供される。   According to another aspect of the present invention, the first lead, the second lead, the first lead and the second lead are fixed to each other, and an envelope having a first recess is formed. A semiconductor light emitting device bonded onto the first lead exposed at the bottom of one recess; a bonding wire electrically connecting the second lead exposed at the bottom of the first recess and the semiconductor light emitting device; A phosphor dispersion layer provided along the inner surface of the first recess and dispersed with a phosphor that converts the wavelength of emitted light from the semiconductor light emitting device, the semiconductor light emitting device, the bonding wire, and the phosphor dispersion And a sealing resin for sealing the layer, wherein a second recess is provided on the semiconductor light emitting element on the surface of the sealing resin.

本発明により、光取り出し効率が改善された、蛍光体による波長変換型半導体発光装置が提供される。   According to the present invention, there is provided a wavelength conversion type semiconductor light emitting device using a phosphor with improved light extraction efficiency.

以下、図面を参照しつつ、本発明の実施の形態について説明する。
図１は、本発明の第１具体例にかかる半導体発光装置の模式断面図である。
半導体発光素子１０は、第１のリード１２の上に、導電性接着剤１１などによって接着されている。半導体発光素子１０の上面に設けられた上部電極（図示せず）と第２リード１４とは、ボンディングワイヤ１３で接続されている。第１リード及び第２リードは、樹脂ベース１６に埋め込まれており、さらに上方に向けて拡開した第１凹部４０を有する外囲器１８が設けられている。外囲器１８は、例えば、樹脂などにより形成できる。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic cross-sectional view of a semiconductor light emitting device according to a first specific example of the present invention.
The semiconductor light emitting element 10 is bonded onto the first lead 12 with a conductive adhesive 11 or the like. An upper electrode (not shown) provided on the upper surface of the semiconductor light emitting element 10 and the second lead 14 are connected by a bonding wire 13. The first lead and the second lead are embedded in the resin base 16, and an envelope 18 having a first recess 40 that is further expanded upward is provided. The envelope 18 can be formed of, for example, resin.

外囲器１８に設けられた第１凹部４０の内側面４２は、光を反射させるリフレクタとして作用する。そして、この内側面４２に沿って、蛍光体分散層２０が所定の厚みで設けられている。蛍光体分散層２０は、蛍光体を分散させた樹脂などからなる。
そして、第１凹部４０内に配置された半導体発光素子１０、ボンディングワイヤ１３、蛍光体分散層２０は、透光性を有する封止樹脂３２により封止されている。封止樹脂３２としては、エポキシ樹脂、シリコーン樹脂などが用いられる。半導体発光素子１０から放出される発光５０の波長が紫外線領域のように短い場合、エポキシ樹脂を用いると変色などが生ずることがあり、この点からは、シリコーン樹脂を用いたほうが有利である。なお、本具体例の半導体発光装置は、いわゆる表面実装型（ＳＭＤ：Surface Mounting Device）半導体発光装置と呼ばれ、液晶ディスプレイや照明用光源用途などにおける高密度実装に適している。 The inner side surface 42 of the first recess 40 provided in the envelope 18 acts as a reflector that reflects light. Along the inner side surface 42, the phosphor dispersion layer 20 is provided with a predetermined thickness. The phosphor dispersion layer 20 is made of a resin in which a phosphor is dispersed.
The semiconductor light emitting element 10, the bonding wire 13, and the phosphor dispersion layer 20 disposed in the first recess 40 are sealed with a light-transmitting sealing resin 32. As the sealing resin 32, an epoxy resin, a silicone resin, or the like is used. When the wavelength of the emitted light 50 emitted from the semiconductor light emitting device 10 is as short as in the ultraviolet region, discoloration or the like may occur when an epoxy resin is used. From this point, it is advantageous to use a silicone resin. The semiconductor light emitting device of this specific example is called a so-called surface mounting type (SMD) semiconductor light emitting device, and is suitable for high-density mounting in applications such as liquid crystal displays and illumination light sources.

封止樹脂３２は、半導体発光素子１０のほぼ中心軸上に第２凹部（「へこみ」）を有していること。第２凹部４５は、上方に向けて拡開した形状であることが望ましい。即ち、第２凹部４５は、半導体発光素子１０のほぼ中心軸上でもっとも深く、中心軸を含む垂直断面における第２凹部４５の幅Ｗは、半導体発光素子１０から離れるに従って広がるものとすることができる。図１に例示した第２凹部４５は、例えば放物線のような上方に凸である曲線を半導体発光素子１０のほぼ中心軸の周りに回転して得られる回転体構造を有する封止樹脂表面４４により形成される。   The sealing resin 32 has a second recess (“dent”) substantially on the central axis of the semiconductor light emitting element 10. It is desirable that the second recess 45 has a shape that expands upward. That is, the second recess 45 is deepest on substantially the central axis of the semiconductor light emitting element 10, and the width W of the second recess 45 in the vertical cross section including the central axis is increased as the distance from the semiconductor light emitting element 10 increases. it can. The second recess 45 illustrated in FIG. 1 is formed by a sealing resin surface 44 having a rotating body structure obtained by rotating an upwardly convex curve such as a parabola around the substantially central axis of the semiconductor light emitting element 10. It is formed.

このような第２凹部４５を設けることにより、半導体発光素子１０からの放射光５０のうちで上方に向かう光の多くは、封止樹脂３２と空気との屈折率差により全反射され、図１に矢印で表したように蛍光体分散層２０へと向かう。   By providing such a second recess 45, most of the upward light of the radiated light 50 from the semiconductor light emitting element 10 is totally reflected by the difference in refractive index between the sealing resin 32 and air, and FIG. As shown by the arrows in FIG.

図２は、全反射を説明するための部分拡大模式図である。
ここで、封止樹脂３２の屈折率を１．５とし、外部は空気とする。臨界角θｃは、θｃ＝ｓｉｎ−１（空気屈折率／封止樹脂屈折率）＝ｓｉｎ−１（１／１．５）＝４２°となる。 FIG. 2 is a partially enlarged schematic view for explaining total reflection.
Here, the refractive index of the sealing resin 32 is 1.5, and the outside is air. The critical angle θc is θc = sin −1 (air refractive index / sealing resin refractive index) = sin −1 (1 / 1.5) = 42 °.

入射角が４２°である臨界角光線５１は、Ｒ点における接線ＢＢ‘と一致する方向へ進む。   A critical angle ray 51 having an incident angle of 42 ° proceeds in a direction coinciding with the tangent line BB ′ at the R point.

本図において、Ｒ点における封止樹脂表面４４の断面内接線ＢＢ‘と直交する法線をＡＡ’とする。法線ＡＡ‘となす角度が、臨界角θｃ以上であると、光はＲ点において全反射されて外部へは放射されない。従って、封止樹脂表面４４の曲面形状は、半導体発光素子放射光５０が封止樹脂表面４４で可能な限り多く全反射されるように形成することが望ましい。また、封止樹脂表面４４の断面は、曲線ではなく、例えば折れ線状であっても良い。なお、半導体発光素子１０から放射された光のうちで、封止樹脂表面４４で反射されずに、直接蛍光体分散層２０へ向かう半導体発光素子放射光５０も多く存在する。   In this figure, the normal line orthogonal to the cross-section inscribed line BB ′ of the sealing resin surface 44 at point R is AA ′. If the angle formed with the normal line AA ′ is equal to or greater than the critical angle θc, the light is totally reflected at the point R and is not emitted to the outside. Therefore, it is desirable to form the curved shape of the sealing resin surface 44 so that the semiconductor light emitting element radiation 50 is totally reflected as much as possible on the sealing resin surface 44. Further, the cross section of the sealing resin surface 44 may be a polygonal line instead of a curved line. Of the light emitted from the semiconductor light emitting element 10, there is also a large amount of semiconductor light emitting element emitted light 50 that is not reflected by the sealing resin surface 44 and goes directly to the phosphor dispersion layer 20.

ここで、蛍光体による波長変換に関してより詳細に説明する。
紫外光〜青色光を吸収した蛍光体は、励起状態となり蛍光体組成により決まった波長光を放射する。蛍光体からの放射光は、一般に励起光（紫外光〜青色光）より長い波長を有する。すなわち、蛍光体による波長変換が行われていることになる。 Here, the wavelength conversion by the phosphor will be described in more detail.
The phosphor that has absorbed ultraviolet light to blue light enters an excited state and emits light having a wavelength determined by the phosphor composition. The emitted light from the phosphor generally has a longer wavelength than the excitation light (ultraviolet light to blue light). That is, wavelength conversion by the phosphor is performed.

紫外光〜青色光の範囲の励起光を放射するためには、「窒化ガリウム系半導体」からなる発光層を有する発光素子を用いることが望ましい。ここで、本願明細書において、「窒化ガリウム系半導体」とは、ＩｎｘＧａｙＡｌ１−ｘ−ｙＮ（０≦ｘ≦１，０≦ｙ≦１、ｘ＋ｙ≦１）なる組成式で表される化合物半導体を意味する。この組成式で表される半導体層を積み重ねることにより、ダブルへテロ接合を形成し、紫外光〜青色光の波長帯の放射光を得ることができる。 In order to emit excitation light in the range of ultraviolet light to blue light, it is desirable to use a light emitting element having a light emitting layer made of “gallium nitride semiconductor”. Here, in the present specification, the “gallium nitride-based semiconductor” is represented by a composition formula of In x Ga y Al 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1). Means a compound semiconductor. By stacking the semiconductor layers represented by this composition formula, a double heterojunction can be formed, and radiation in the wavelength band of ultraviolet light to blue light can be obtained.

第１具体例においては、励起光として窒化ガリウム系発光素子１０からの約４２０ナノメータの波長を有する紫外光を用いる。この紫外光を吸収し、励起により、紫外光より長波長である赤色光（波長約６５０ナノメータ）、青色光（波長約４７０ナノメータ）、緑色光（波長約５３０ナノメータ）を放射させる蛍光体としては、セリウム（Ｃｅ）で付活されたイットリウム・アルミニウム・ガーネット系蛍光体などの公知の蛍光体を一例として挙げることができる。この発光スペクトルのピークは、５３０ナノメータ付近にあり、７００ナノメータまでの広範囲な発光スペクトルを有する。   In the first specific example, ultraviolet light having a wavelength of about 420 nanometers from the gallium nitride based light emitting device 10 is used as excitation light. As a phosphor that absorbs this ultraviolet light and emits red light (wavelength of about 650 nanometers), blue light (wavelength of about 470 nanometers), and green light (wavelength of about 530 nanometers) that is longer than ultraviolet light by excitation. For example, a known phosphor such as yttrium, aluminum, and garnet phosphor activated with cerium (Ce) can be used. The peak of this emission spectrum is in the vicinity of 530 nanometers and has a broad emission spectrum up to 700 nanometers.

このイットリウム・アルミニウム・ガーネット系蛍光体においては、アルミニウム（Ａｌ），ガーネット（Ｇａ），イットリウム（Ｙ）及びガドリニウム（Ｇｄ），ランタン（Ｌａ），サマリウム（Ｓｍ）の組成比を選択することにより、ＲＧＢ（赤色、緑色、青色）の波長成分を変化させることができる。   In this yttrium-aluminum-garnet phosphor, by selecting the composition ratio of aluminum (Al), garnet (Ga), yttrium (Y) and gadolinium (Gd), lanthanum (La), samarium (Sm), The wavelength components of RGB (red, green, blue) can be changed.

次に、本具体例による白色光を生じる作用について説明する。
図３は、図１におけるＡ領域３０の部分拡大模式断面図である。
外囲器１８の第１凹部４０の内側面４２に、蛍光体分散層２０が設けられている。蛍光体分散層２０は、樹脂などの中に、赤色蛍光体２２、緑色蛍光体２４、青色蛍光体２６が分散された構造を有し、内側面４２の上で所定の厚みＴを有するように形成されている。 Next, the effect | action which produces the white light by this example is demonstrated.
3 is a partially enlarged schematic cross-sectional view of the A region 30 in FIG.
The phosphor dispersion layer 20 is provided on the inner side surface 42 of the first recess 40 of the envelope 18. The phosphor dispersion layer 20 has a structure in which a red phosphor 22, a green phosphor 24, and a blue phosphor 26 are dispersed in a resin or the like, and has a predetermined thickness T on the inner side surface 42. Is formed.

半導体発光素子からの放射光５０は、蛍光体分散層２０中の赤色蛍光体２２に吸収され、励起されて赤色光５２を放出する。同様に、緑色蛍光体２４は緑色光５４を、青色蛍光体２６は青色光５６を放出する。このようにして発光された赤色光５２と、緑色光５４と、青色光５６との混合により、半導体発光装置６０から白色光５８が得られる。
そして、本実施形態においては、蛍光体分散層２０の表面近くで半導体発光素子放射光５０の多くが吸収され、波長変換がされるようにする。このようにすると、波長変換された光が他の蛍光体により再吸収されて、取り出される光が低減するという問題を抑制できる。 The emitted light 50 from the semiconductor light emitting device is absorbed by the red phosphor 22 in the phosphor dispersion layer 20 and excited to emit red light 52. Similarly, the green phosphor 24 emits green light 54 and the blue phosphor 26 emits blue light 56. White light 58 is obtained from the semiconductor light emitting device 60 by mixing the red light 52, the green light 54, and the blue light 56 thus emitted.
In the present embodiment, much of the semiconductor light emitting element radiation 50 is absorbed near the surface of the phosphor dispersion layer 20 and wavelength conversion is performed. In this way, it is possible to suppress the problem that the wavelength-converted light is reabsorbed by another phosphor and the extracted light is reduced.

すなわち、蛍光体分散層２０の厚みＴ及び蛍光体含有量は、半導体発光素子放射光５０が内側面４２に到達する前に大部分が蛍光体に吸収されるように設定することが望ましい。このようにすると、蛍光体分散層２０における半導体発光素子放射光５０の光損失を低減できる。
さらに、内側面４２の表面に、例えば金属膜などを設けて高反射率のリフレクタとすることができる。または、外囲器１８の代わりに、同様の形状を有する金属製の成形体を設けてもよい。この場合、一対のリード１２、１４が電気的にショートしないように、これらリード１２、１４と金属製の成形体との間を絶縁できる構造または部材を適宜設ければよい。 That is, the thickness T and the phosphor content of the phosphor dispersion layer 20 are desirably set so that most of the semiconductor light emitting element radiation 50 is absorbed by the phosphor before reaching the inner side surface 42. In this way, the optical loss of the semiconductor light emitting element radiation 50 in the phosphor dispersion layer 20 can be reduced.
Furthermore, for example, a metal film can be provided on the surface of the inner side surface 42 to provide a reflector having a high reflectance. Alternatively, instead of the envelope 18, a metal molded body having a similar shape may be provided. In this case, a structure or a member that can insulate between the leads 12 and 14 and the metal molded body may be appropriately provided so that the pair of leads 12 and 14 are not electrically short-circuited.

この場合、内側面４２からの反射光が蛍光体分散層２０の表面に戻ってきたときに、半導体発光素子放射光５０が蛍光体にほぼ吸収されるように、厚みＴ及び蛍光体含有量を決定することが好ましい。   In this case, when the reflected light from the inner side surface 42 returns to the surface of the phosphor dispersion layer 20, the thickness T and the phosphor content are set so that the semiconductor light emitting element radiation 50 is substantially absorbed by the phosphor. It is preferable to determine.

次に、比較例について説明する。
図４は、比較例の半導体発光装置の模式断面図である。
なお、同図については、図１に関して前述した要素の同様のものには、同一の符号を付して詳細な説明は省略する。
本比較例においては、蛍光体２２、２４、２６は、透光性の封止樹脂３２の全体に分散配置されている。 Next, a comparative example will be described.
FIG. 4 is a schematic cross-sectional view of a semiconductor light emitting device of a comparative example.
In the figure, the same elements as those described above with reference to FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
In this comparative example, the phosphors 22, 24, and 26 are dispersedly disposed throughout the translucent sealing resin 32.

本比較例の場合、半導体発光素子からの放射光５０の多くは、半導体発光素子１０の直上の近傍であるＢ領域（破線）において蛍光体に吸収される。この結果、波長変換された赤色光５２、緑色光５４、青色光５６、が通過したＢ領域よりも上の部分においては、半導体発光素子からの放射光５０（すなわち、励起光）の強度は低下する。そして、波長変換された光が、蛍光体に再吸収される確率が高まる。この結果、波長変換された赤色光５２、緑色光５４、青色光５６の強度も低下し、混合色である白色光５８の強度も低下する。言い換えると、光取り出し効率が低下する。   In the case of this comparative example, most of the emitted light 50 from the semiconductor light emitting element is absorbed by the phosphor in the B region (broken line) that is in the vicinity immediately above the semiconductor light emitting element 10. As a result, the intensity of the radiated light 50 (that is, the excitation light) from the semiconductor light emitting element is reduced in the portion above the B region through which the wavelength-converted red light 52, green light 54, and blue light 56 have passed. To do. The probability that the wavelength-converted light is reabsorbed by the phosphor increases. As a result, the intensities of the red light 52, the green light 54, and the blue light 56 that have undergone wavelength conversion are also reduced, and the intensity of the white light 58 that is a mixed color is also reduced. In other words, the light extraction efficiency decreases.

これに対して、第１の具体例においては、波長変換された光が蛍光体において再吸収されることを抑制できる。この結果、高い光取り出し効率が実現できる。なお、封止樹脂３２には、蛍光体を混合しない具体例について説明した。しかし、波長変換光を再吸収しない程度に蛍光体を低濃度に分散させれば、全体としては光取り出し効率および指向特性を改善できる。   In contrast, in the first specific example, the wavelength-converted light can be prevented from being reabsorbed in the phosphor. As a result, high light extraction efficiency can be realized. In addition, the specific example which does not mix a fluorescent substance with the sealing resin 32 was demonstrated. However, if the phosphor is dispersed at a low concentration to the extent that wavelength-converted light is not reabsorbed, the overall light extraction efficiency and directivity can be improved.

次に、第１具体例における指向特性について説明する。
図５は、第１の具体例にかかる半導体発光装置６０の指向特性を概念的に例示したグラフ図である。 半導体発光装置６０の一点鎖線Ｃ−Ｃ‘における断面に沿って、垂直面内における光度の相対値を測定した。軸上光度の５０％となる角度（半値全角）は約１３０度であり、液晶ディスプレイのバックライトや照明用光源としての仕様を満たすことができる。なお、内側面４２の傾斜角度や、第２凹部４５の形状により、図５に例示したような各種の指向特性の制御が可能である。 Next, directivity characteristics in the first specific example will be described.
FIG. 5 is a graph conceptually illustrating the directivity characteristics of the semiconductor light emitting device 60 according to the first specific example. A relative value of the luminous intensity in the vertical plane was measured along the cross-section along the one-dot chain line CC ′ of the semiconductor light emitting device 60. The angle (full width at half maximum) that is 50% of the on-axis luminous intensity is about 130 degrees, and can satisfy the specifications as a backlight of a liquid crystal display or an illumination light source. Note that various directivity characteristics illustrated in FIG. 5 can be controlled by the inclination angle of the inner side surface 42 and the shape of the second recess 45.

図６は、第１具体例の変形例を表す模式断面図である。
同図についても、図１に関して前述したものと同様の要素には同一の符号を付して詳細な説明は省略する。
本変形例においては、蛍光体分散層２０が、内側面４２上のみならず、第１凹部４０の底面を構成する樹脂ベース１６、第１リード１２、第２リード１４の上にも配置されている。半導体発光素子１０が上方向のみならず、横方向、下方向にも光を放射する構造を有している場合には、本変形例を用いて、より光取り出し効率を改善できる。 FIG. 6 is a schematic cross-sectional view showing a modification of the first specific example.
Also in this figure, the same elements as those described above with reference to FIG.
In this modification, the phosphor dispersion layer 20 is disposed not only on the inner side surface 42 but also on the resin base 16, the first lead 12, and the second lead 14 that form the bottom surface of the first recess 40. Yes. When the semiconductor light emitting element 10 has a structure that emits light not only in the upward direction but also in the lateral direction and the downward direction, the light extraction efficiency can be further improved by using this modification.

図７は、本発明の第２具体例にかかる半導体発光装置６０の模式断面図である。
同図についても、図１に関して前述したものと同様の要素には同一の符号を付して詳細な説明は省略する。
本具体例における第２凹部４５は、断面が直線状とされている。すなわち、円錐状の第２凹部（すなわち、「へこみ」）が設けられている。 FIG. 7 is a schematic cross-sectional view of a semiconductor light emitting device 60 according to a second specific example of the present invention.
Also in this figure, the same elements as those described above with reference to FIG.
The second recess 45 in this specific example has a linear cross section. That is, a conical second recess (that is, “dent”) is provided.

本具体例においても、半導体発光素子放射光５０のうち、封止樹脂表面４４におけるＱ点において臨界角θｃより大きい入射角を有する光は全反射したのち、蛍光体分散層２０へと向かう。蛍光体分散層２０における作用は、図３に関して前述したものとほぼ同様である。円錐状の第２凹部であっても、傾斜を適正に選択することにより効率よい蛍光体吸収、励起が可能である。
また、このように、第２凹部４５の形状を適宜調整することにより、半導体発光素子１０からの発光の一部を封止樹脂表面４４において全反射させずに、直接、外部に取り出すことができる。この時、後に詳述するように、半導体発光素子１０からの放出光を青色の波長帯の光とし、蛍光体分散層２０に黄色光を発光する蛍光体を分散させると、白色光が得られる。つまり、半導体発光素子１０から直接外部に取り出された青色光と、蛍光体分散層２０において波長変換された黄色光と、の混合により白色光が得られる。この場合も、蛍光体分散層２０を内側面４２において所定の厚みで形成することにより、波長変換された黄色光が蛍光体などに再吸収されて光取り出し効率が低下する問題を抑制できる。 Also in this specific example, of the semiconductor light emitting element radiated light 50, light having an incident angle larger than the critical angle θc at the point Q on the sealing resin surface 44 is totally reflected and then travels to the phosphor dispersion layer 20. The operation of the phosphor dispersion layer 20 is substantially the same as that described above with reference to FIG. Even if it is a conical 2nd recessed part, fluorescent substance absorption and excitation are possible efficiently by selecting inclination appropriately.
In addition, by appropriately adjusting the shape of the second recess 45 as described above, a part of the light emitted from the semiconductor light emitting element 10 can be directly taken out without being totally reflected on the sealing resin surface 44. . At this time, as will be described in detail later, white light can be obtained by making the emitted light from the semiconductor light emitting element 10 light in the blue wavelength band and dispersing the phosphor emitting yellow light in the phosphor dispersion layer 20. . That is, white light can be obtained by mixing the blue light extracted directly from the semiconductor light emitting element 10 and the yellow light wavelength-converted in the phosphor dispersion layer 20. Also in this case, by forming the phosphor dispersion layer 20 with a predetermined thickness on the inner side surface 42, it is possible to suppress the problem that the wavelength-converted yellow light is reabsorbed by the phosphor and the light extraction efficiency is reduced.

図８は、本発明の第３具体例にかかる半導体発光装置の模式断面図である。
同図についても、図１に関して前述したものと同様の要素には同一の符号を付して詳細な説明は省略する。
本具体例においては、内側面４３の断面形状が、放物線状とされている。このようにすると、第１凹部４０の底面付近において光を有効に上方向に向けることができるので、指向特性の制御と光取り出し効率の改善が容易になる。なお、放物線の代わりに、折れ線状断面であっても同様の効果を生じる。 FIG. 8 is a schematic cross-sectional view of a semiconductor light emitting device according to a third specific example of the present invention.
Also in this figure, the same elements as those described above with reference to FIG.
In this specific example, the cross-sectional shape of the inner side surface 43 is a parabolic shape. In this way, light can be effectively directed upward in the vicinity of the bottom surface of the first recess 40, so that it is easy to control the directivity and improve the light extraction efficiency. In addition, the same effect is produced even if it is a polygonal cross section instead of a parabola.

以上、第１乃至第３具体例においては、窒化ガリウム系半導体発光素子１０から放射される紫外光と、この光を吸収し励起された蛍光体からの波長変換光とを合成することにより白色光を得る場合について説明した。しかし、本発明はこれには限定されない。   As described above, in the first to third specific examples, the white light is synthesized by combining the ultraviolet light emitted from the gallium nitride based semiconductor light emitting element 10 and the wavelength converted light from the phosphor that is absorbed and excited by this light. Explained when you get. However, the present invention is not limited to this.

例えば、窒化ガリウム系半導体発光素子から放射される波長４７０ナノメータ前後の青色光を用いることもできる。この場合、例えば、青色光を吸収し、黄色光を放射する蛍光体として珪酸塩蛍光体を用いることができる。珪酸塩蛍光体は、（Ｍｅ１−ｙＥｕｙ）２ＳｉＯ４（Ｍｅは、Ｂａ，Ｓｒ，Ｃａ，Ｍｇから選ばれる少なくとも一つのアルカリ土類金属元素）で表される。 For example, blue light having a wavelength of about 470 nanometers emitted from a gallium nitride based semiconductor light emitting element can be used. In this case, for example, a silicate phosphor can be used as a phosphor that absorbs blue light and emits yellow light. The silicate phosphor is represented by (Me 1-y Eu y ) 2 SiO 4 (Me is at least one alkaline earth metal element selected from Ba, Sr, Ca, and Mg).

半導体発光素子１０から放射される青色光と、黄色蛍光体により波長変換された黄色光の合成によっても白色光が得られる。さらに、赤の演色性を改善するために、窒化物蛍光体により波長変換された赤色光を加えることにより赤色演色性が改善された、いわゆる「電球色」の白色光が得られる。このような黄色蛍光体と、赤色蛍光体とを分散させた蛍光体分散層２０を用いることによっても、第１乃至第３の具体例と同様の効果を得ることができる。   White light can also be obtained by combining the blue light emitted from the semiconductor light emitting element 10 and the yellow light wavelength-converted by the yellow phosphor. Furthermore, in order to improve the color rendering properties of red, a so-called “bulb color” white light with improved red color rendering properties is obtained by adding red light wavelength-converted by the nitride phosphor. By using the phosphor dispersion layer 20 in which such a yellow phosphor and a red phosphor are dispersed, the same effects as those of the first to third specific examples can be obtained.

さらに、本発明は、放射光として白色光に限定されることはない。半導体発光素子放射光５０と、蛍光体による波長変換光とを用いて波長が４００〜７００ナノメータの範囲である可視光を得る半導体発光装置に対して広く応用することができる。   Furthermore, the present invention is not limited to white light as emitted light. The present invention can be widely applied to semiconductor light-emitting devices that obtain visible light having a wavelength in the range of 400 to 700 nanometers using semiconductor light-emitting element radiation light 50 and wavelength-converted light by a phosphor.

以上、具体例を参照しつつ本発明の実施の形態について説明した。しかし、本発明はこれら具体例に限定されるものではない。   The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

半導体発光装置を構成する半導体発光素子、リード、樹脂、蛍光体、凹部などの各要素の形状、サイズ、材質、配置関係などに関して当業者が各種の設計変更を加えたものであっても、本発明の要旨を有する限りにおいて本発明の範囲に包含される。   Even if a person skilled in the art has made various design changes with respect to the shape, size, material, arrangement relation, etc. of each element such as a semiconductor light emitting element, a lead, a resin, a phosphor, and a recess constituting the semiconductor light emitting device As long as it has the gist of the invention, it is included in the scope of the present invention.

本発明の第１具体例にかかる半導体発光装置を表す模式断面図である。It is a schematic cross section showing the semiconductor light-emitting device concerning the 1st example of the present invention. 第１具体例における封止樹脂と空気の界面における全反射を説明する模式図である。It is a schematic diagram explaining the total reflection in the interface of the sealing resin and air in a 1st specific example. 第１具体例における蛍光体分散層の部分拡大断面図である。It is a partial expanded sectional view of the fluorescent substance dispersion layer in the 1st example. 比較例にかかる半導体発光装置を表す模式断面図である。It is a schematic cross section showing the semiconductor light-emitting device concerning a comparative example. 第１具体例にかかる半導体発光装置の指向特性を表すグラフ図である。It is a graph showing the directivity of the semiconductor light emitting device according to the first specific example. 第１具体例の変形例である半導体発光装置を表す模式図である。It is a schematic diagram showing the semiconductor light-emitting device which is a modification of a 1st specific example. 本発明の第２実施例にかかる半導体発光装置を表す模式断面図である。It is a schematic cross section showing the semiconductor light-emitting device concerning 2nd Example of this invention. 本発明の第３具体例にかかる半導体発光装置を表す模式断面図である。It is a schematic cross section showing the semiconductor light-emitting device concerning the 3rd example of the present invention.

符号の説明Explanation of symbols

１０ 半導体発光素子、１２ 第１リード、１３ ボンディングワイヤ、 １４ 第２リード、 １６ 樹脂ベース、 １８ 外囲器、 ２０ 蛍光体分散層、 ２２ 赤色蛍光体、 ２４ 緑色蛍光体、 ２６ 青色蛍光体、 ３０ Ａ領域、 ３２ 封止樹脂、 ４０ 第１凹部、 ４１ Ｂ領域、 ４２ 内側面、 ４４ 封止樹脂表面、 ４５ 第２凹部、 ５０ 半導体発光素子放射光、 ５１ 臨界角光線、 ５２ 赤色光、 ５４ 緑色光、 ５６ 青色光、 ５８ 白色光、 ６０ 半導体発光装置   DESCRIPTION OF SYMBOLS 10 Semiconductor light-emitting device, 12 1st lead | read | reed, 13 Bonding wire, 14 2nd lead | read | reed, 16 Resin base, 18 Envelope, 20 Phosphor dispersion layer, 22 Red fluorescent substance, 24 Green fluorescent substance, 26 Blue fluorescent substance, 30 A region, 32 sealing resin, 40 1st recessed part, 41 B area | region, 42 inner surface, 44 sealing resin surface, 45 2nd recessed part, 50 Semiconductor light-emitting device radiation | emission light, 51 critical angle light beam, 52 red light, 54 green Light, 56 blue light, 58 white light, 60 semiconductor light emitting device

Claims (8)

第１凹部を有する外囲器と、
前記第１凹部の底面に設けられた半導体発光素子と、
前記第１凹部の内側面に沿って設けられ、前記半導体発光素子からの放射光を波長変換する蛍光体が分散された蛍光体分散層と、
前記半導体発光素子と前記蛍光体分散層を封止する封止樹脂と、
を備え、
前記封止樹脂の表面において、前記半導体発光素子の上に第２凹部が設けられたことを特徴とする半導体発光装置。 An envelope having a first recess;
A semiconductor light emitting device provided on a bottom surface of the first recess;
A phosphor dispersion layer that is provided along the inner surface of the first recess and in which a phosphor that converts the wavelength of the emitted light from the semiconductor light emitting element is dispersed;
A sealing resin for sealing the semiconductor light emitting element and the phosphor dispersion layer;
With
A semiconductor light emitting device, wherein a second recess is provided on the semiconductor light emitting element on a surface of the sealing resin. 第１リードと、
第２リードと、
前記第１リードと前記第２リードとをそれぞれ固定し、第１凹部を有する外囲器と、
前記第１凹部の底に露出した前記第１リード上に接着された半導体発光素子と、
前記第１凹部の底に露出した前記第２リードと前記半導体発光素子とを電気的に接続するボンディングワイヤと、
前記第１凹部の内側面に沿って設けられ、前記半導体発光素子からの放射光を波長変換する蛍光体が分散された蛍光体分散層と、
前記半導体発光素子と前記ボンディングワイヤと前記蛍光体分散層を封止する封止樹脂と、
を備え、
前記封止樹脂の表面において、前記半導体発光素子の上に第２凹部が設けられたことを特徴とする半導体発光装置。 The first lead;
A second lead;
An envelope having a first recess and fixing the first lead and the second lead;
A semiconductor light emitting device bonded onto the first lead exposed at the bottom of the first recess;
A bonding wire that electrically connects the second lead exposed at the bottom of the first recess and the semiconductor light emitting element;
A phosphor dispersion layer that is provided along the inner surface of the first recess and in which a phosphor that converts the wavelength of the emitted light from the semiconductor light emitting element is dispersed;
A sealing resin for sealing the semiconductor light emitting element, the bonding wire, and the phosphor dispersion layer;
With
A semiconductor light emitting device, wherein a second recess is provided on the semiconductor light emitting element on a surface of the sealing resin. 前記第２凹部は、前記半導体発光素子から上方に放出された前記放射光を前記封止樹脂の表面において実質的に全反射させるように前記半導体発光素子の直上において深く、且つ周囲に向けて浅くなるように形成されてなることを特徴とする請求項１または２に記載の半導体発光装置。   The second recess is deep immediately above the semiconductor light emitting element and shallow toward the periphery so that the emitted light emitted upward from the semiconductor light emitting element is substantially totally reflected on the surface of the sealing resin. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed as follows. 前記第２凹部の表面の形状は、実質的に放物面であることを特徴とする請求項1〜３のいずれか１つに記載の半導体発光装置。   4. The semiconductor light emitting device according to claim 1, wherein a shape of a surface of the second recess is substantially a paraboloid. 5. 前記第２凹部の表面の形状は、実質的に円錐面であることを特徴とする請求項１〜３のいずれか１つに記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein a shape of a surface of the second recess is substantially a conical surface. 前記蛍光体分散層は、前記半導体発光素子から放出された前記放射光が前記内側面に至るまでにほぼその全てが前記蛍光体により吸収されるようにその厚みと蛍光体の密度とが決定されていることを特徴とする請求項１〜５のいずれか１つに記載の半導体発光装置。   The phosphor dispersion layer has a thickness and a phosphor density determined so that almost all of the emitted light emitted from the semiconductor light emitting device is absorbed by the phosphor before reaching the inner surface. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is provided. 前記内側面は、光を反射するリフレクタとして作用し、
前記蛍光体分散層は、前記半導体発光素子から放出された前記放射光が前記蛍光体分散層を通過して前記内側面に至り前記内側面において反射されて前記蛍光体分散層を通過し前記蛍光体分散層と前記封止樹脂との界面に至るまでにほぼその全てが前記蛍光体により吸収されるようにその厚みと蛍光体の密度とが決定されていることを特徴とする請求項１〜５のいずれか１つに記載の半導体発光装置。 The inner surface acts as a reflector that reflects light;
In the phosphor dispersion layer, the emitted light emitted from the semiconductor light emitting element passes through the phosphor dispersion layer, reaches the inner surface, is reflected at the inner surface, passes through the phosphor dispersion layer, and passes through the phosphor dispersion layer. The thickness and the density of the phosphor are determined such that almost all of the body dispersion layer and the sealing resin are absorbed by the phosphor before reaching the interface. The semiconductor light emitting device according to any one of 5. 前記半導体発光素子は、窒化ガリウム系半導体からなる発光層を有し、
前記蛍光体は、前記放射光を吸収して互いに異なる波長の光を放出する複数種類の蛍光体を含み、
前記蛍光体により波長変換された光の混合により白色光が得られることを特徴とする請求項１〜７のいずれか１つに記載の半導体発光装置。
The semiconductor light emitting device has a light emitting layer made of a gallium nitride based semiconductor,
The phosphor includes a plurality of types of phosphors that absorb the emitted light and emit light having different wavelengths.
8. The semiconductor light emitting device according to claim 1, wherein white light is obtained by mixing light converted in wavelength by the phosphor.
JP2006236768A 2006-08-31 2006-08-31 Semiconductor light emitting device Pending JP2008060411A (en)

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JP2010028049A (en) * 2008-07-24 2010-02-04 Kyocera Corp Light-emitting device and lighting system
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JP2016019000A (en) * 2014-07-08 2016-02-01 エルジー イノテック カンパニー リミテッド Light emitting element package
KR20180047822A (en) * 2016-11-01 2018-05-10 주식회사 지엘비젼 Converting Structure of Wavelength, Light Emitting Diode Package And Lighting device
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