JP2010157608A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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JP2010157608A
JP2010157608A JP2008334992A JP2008334992A JP2010157608A JP 2010157608 A JP2010157608 A JP 2010157608A JP 2008334992 A JP2008334992 A JP 2008334992A JP 2008334992 A JP2008334992 A JP 2008334992A JP 2010157608 A JP2010157608 A JP 2010157608A
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phosphor
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blue
emitting device
light emitting
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JP5195415B2 (en
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Hiroaki Okagawa
広明 岡川
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Mitsubishi Chemical Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device capable of generating white light having stable white balance and excelling in a color rendering property in spite of using a semiconductor light emitting element for an excitation light source. <P>SOLUTION: This light emitting device includes the semiconductor light emitting element of which the red phosphor is a Mn activation fluoro complex salt-based phosphor, the blue phosphor is a Eu activation aluminate-based phosphor, the green phosphor is a Eu and Mn activation aluminate-based phosphor, and which emits light for exciting the blue phosphor and the green phosphor without substantially exciting the red phosphor. The red phosphor is excited by a part of blue light emitted by the blue phosphor by being excited by light emitted by the semiconductor light emitting element. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、ＬＥＤなどの半導体発光素子と波長変換手段である蛍光体とを組み合わせた発光装置に関する。   The present invention relates to a light-emitting device that combines a semiconductor light-emitting element such as an LED and a phosphor that is wavelength converting means.

ＬＥＤと蛍光体とを組み合わせて白色光を発生させる白色発光装置が固体照明用光源として注目を集めている。ＬＥＤは供給する電流値の変化や周囲温度の変動によってその発光波長が変化するために、このような白色発光装置においてはホワイトバランスを安定化させることがひとつの課題となっている（特許文献１）。
特開２０００−３１５３１号公報 米国特許第３５７６７５６号公報 米国特許公開第２００６／０１６９９９８号公報 White light-emitting devices that generate white light by combining LEDs and phosphors are attracting attention as light sources for solid-state illumination. Since the light emission wavelength of an LED changes due to a change in a current value to be supplied or a change in ambient temperature, in such a white light emitting device, it is one problem to stabilize white balance (Patent Document 1). ).
JP 2000-31531 A U.S. Pat. No. 3,576,756 US Patent Publication No. 2006/0169998

特許文献１にはホワイトバランスを安定化させた白色発光装置として、紫外線発光素子を用いて青色蛍光体を励起し、その青色蛍光体が放出する青色光の一部で黄色蛍光体を励起し、共に蛍光体由来の青色光および黄色光の混合により白色光を生成させる発光装置が開示されている。黄色蛍光体として用いられているのは（Ｙ1-aＧｄa）3（Ａｌ1-bＧａb）5Ｏ12：Ｃｅで表されるＣｅ付活ＹＡＧ（ＹＡＧはイットリウム・アルミニウム・ガーネットの略）である。しかしながら、この白色発光装置が放射する白色光は成分光として青色光と黄色光しか含まないために演色性に劣るという問題点がある。 In Patent Document 1, as a white light emitting device with stabilized white balance, a blue phosphor is excited using an ultraviolet light emitting element, and a yellow phosphor is excited by a part of blue light emitted from the blue phosphor, Both disclose a light emitting device that generates white light by mixing blue light and yellow light derived from a phosphor. That used as a yellow phosphor (Y 1-a Gd a) 3 (Al 1-b Ga b) 5 O 12: Ce activated YAG represented by Ce (YAG stands for yttrium aluminum garnet ). However, the white light emitted from the white light emitting device has a problem that it is inferior in color rendering because it contains only blue light and yellow light as component light.

したがって、半導体発光素子を励起光源に用いながらも、ホワイトバランスが安定でかつ演色性の良好な白色光を生成することのできる発光装置が求められている。かかる発光装置が実現されれば、照明用光源やカラー液晶表示装置のバックライト用光源として好ましく使用できることはいうまでもない。   Therefore, there is a need for a light emitting device that can generate white light with stable white balance and good color rendering while using a semiconductor light emitting element as an excitation light source. It goes without saying that if such a light emitting device is realized, it can be preferably used as a light source for illumination or a backlight for a color liquid crystal display device.

本発明が提供する半導体発光装置は、赤色蛍光体としてＭ2ＸＦ6：Ｍｎ（ここで、ＭはＬｉ，Ｎａ，Ｋ，Ｒｂ，ＣｓおよびＮＨ4からなる群から選ばれる一種以上を含有し、ＸはＧｅ、Ｓｉ，Ｓｎ，ＴｉおよびＺｒからなる群より選ばれる１種以上を含有する）で表されるＭｎ付活フルオロ錯体塩系蛍光体を用いることをひとつの特徴としている。なお、以下ではこの蛍光体を「ＭＸＦ」と略称する場合がある。 The semiconductor light emitting device provided by the present invention contains M 2 XF 6 : Mn (wherein M is one or more selected from the group consisting of Li, Na, K, Rb, Cs and NH 4 as a red phosphor, One feature is that X uses a Mn-activated fluorocomplex salt-based phosphor represented by X) containing at least one selected from the group consisting of Ge, Si, Sn, Ti and Zr. Hereinafter, this phosphor may be abbreviated as “MXF”.

ＭＸＦは特許文献２、特許文献３などに開示されている公知の赤色蛍光体である。特許文献２のＦｉｇ．１にはＭＸＦの典型的な励起スペクトルとしてＫ2ＴｉＦ6：Ｍｎの励起スペクトルが示されているが、その励起スペクトルが示す通り、ＭＸＦは青色波長域（４３０ｎｍ〜４８０ｎｍ）の光によって強く励起される一方、波長４００ｎｍ付近（３８０ｎｍ〜４２０ｎｍ）の光によっては実質的に励起されないという性質を有している。 MXF is a known red phosphor disclosed in Patent Document 2, Patent Document 3, and the like. FIG. 1 shows the excitation spectrum of K 2 TiF 6 : Mn as a typical excitation spectrum of MXF. As the excitation spectrum shows, MXF is strongly excited by light in the blue wavelength region (430 nm to 480 nm). On the other hand, it has a property that it is not substantially excited by light having a wavelength of around 400 nm (380 nm to 420 nm).

従って、発光波長４００ｎｍ付近の半導体発光素子を用いて青色蛍光体を励起し、その青色蛍光体が放出する光の一部を用いてＭＸＦを励起させるようにすれば、青色光と赤色光とのバランスが安定した発光装置が得られる。しかし、青色光と赤色光のみでは高演色照明やカラー液晶ディスプレイに用い得る良質な白色光を生成させることはできない。そのような白色光を生成させるには、この発光装置に更に緑色光源として緑色蛍光体を追加する必要がある。ＭＸＦは緑色光によっても実質的に励起されないので、緑色蛍光体を追加しても青色光と赤色光とのバランスには影響がないという利点がある。ただし、半導体発光素子の発光波長が変化したときには緑色蛍光体から生じる緑色光の強度も青色光および赤色光と同じように変化するようにしないと、ホワイトバランスの安定化が達成できない。   Therefore, if a blue phosphor is excited using a semiconductor light emitting element having an emission wavelength of about 400 nm and MXF is excited using a part of the light emitted from the blue phosphor, the blue and red lights A light-emitting device with a stable balance can be obtained. However, high-quality white light that can be used for high color rendering illumination and color liquid crystal displays cannot be generated with only blue light and red light. In order to generate such white light, it is necessary to add a green phosphor as a green light source to the light emitting device. Since MXF is not substantially excited by green light, there is an advantage that even if a green phosphor is added, the balance between blue light and red light is not affected. However, when the emission wavelength of the semiconductor light emitting element is changed, the white balance cannot be stabilized unless the intensity of the green light generated from the green phosphor is changed in the same manner as the blue light and the red light.

そこで、本発明では、波長４００ｎｍ付近における青色蛍光体と緑色蛍光体の励起特性が揃うように、青色および緑色の蛍光体として母体の基本構造が同一であるものを選択する。すなわち、青色蛍光体として（Ｃａ，Ｓｒ，Ｂａ）ＭｇＡｌ10Ｏ17：Ｅｕで表されるＥｕ付活アルミン酸塩系蛍光体を用い、緑色蛍光体として（Ｂａ，Ｓｒ）ＭｇＡｌ10Ｏ17：Ｅｕ，Ｍｎで表されるＥｕおよびＭｎ付活アルミン酸塩系蛍光体を用いる。好ましくは、青色蛍光体にＢａＭｇＡｌ10Ｏ17：Ｅｕを用い、緑色蛍光体にＢａＭｇＡｌ10Ｏ17：Ｅｕ，Ｍｎを用いる。このようにすれば、半導体発光素子の発光波長が変化しても、青色蛍光体から生じる青色光の強度と緑色蛍光体から生じる緑色光の強度とが同じように変化するので、青色光と緑色光とのバランスは変わらない。そして、前述の通り、赤色蛍光体としてＭＸＦを用いることにより、赤色光と青色光との間のバランスも安定しているので、得られる発光装置においては、成分光である赤色光と青色光と緑色光との間のバランスが安定した、演色性にもホワイトバランスの安定性にも優れた良質な白色光の生成が可能となる。なお、ＭＸＦの発光スペクトルが赤色領域に有するピークは半値幅が極めて小さいので、この三原色光を同時に放射する発光装置は色再現範囲の広いことが要求されるカラー液晶表示装置のバックライト用途に特に適している。 Therefore, in the present invention, blue and green phosphors having the same basic structure are selected so that the excitation characteristics of the blue phosphor and the green phosphor in the vicinity of a wavelength of 400 nm are aligned. That is, an Eu-activated aluminate-based phosphor represented by (Ca, Sr, Ba) MgAl 10 O 17 : Eu is used as the blue phosphor, and (Ba, Sr) MgAl 10 O 17 : Eu is used as the green phosphor. Eu and Mn activated aluminate phosphors represented by Mn are used. Preferably, BaMgAl 10 O 17 : Eu is used for the blue phosphor, and BaMgAl 10 O 17 : Eu, Mn is used for the green phosphor. In this way, even if the emission wavelength of the semiconductor light emitting device changes, the intensity of blue light generated from the blue phosphor and the intensity of green light generated from the green phosphor change in the same way. The balance with light does not change. As described above, since the balance between red light and blue light is stable by using MXF as the red phosphor, in the obtained light emitting device, red light and blue light as component lights are It is possible to generate high-quality white light with a stable balance between green light and excellent color rendering and white balance stability. Note that the peak of the MXF emission spectrum in the red region has a very small half-value width. Therefore, the light emitting device that simultaneously emits these three primary colors is particularly suitable for backlight applications in color liquid crystal display devices that require a wide color reproduction range. Is suitable.

また、本発明では、上記のように選択する赤色蛍光体、青色蛍光体および緑色蛍光体に加えて、更にＣｅ付活ＹＡＧを組み合わせて発光装置を構成してもよい。Ｃｅ付活ＹＡＧは青色光により励起される一方、波長４００ｎｍ付近の光によっても、また、緑色光によっても、実質的に励起されない。よって、半導体発光素子の発光波長が変化しても、Ｃｅ付活ＹＡＧから生じる黄色光の強度は青色蛍光体から生じる青色光の強度と同じように変化するので、青色光と黄色光とのバランスは変わらない。よって、得られる発光装置においては、赤色光、青色光、緑色光および黄色光の間のバランスが安定した、演色性にもホワイトバランスの安定性にも優れた白色光が生成可能となる。このような４つの成分光からなる白色光を生成し得る発光装置は演色性が重視される照明用途に特に適している。   In the present invention, in addition to the red phosphor, blue phosphor, and green phosphor selected as described above, a Ce-activated YAG may be further combined to constitute a light emitting device. Ce-activated YAG is excited by blue light, but is not substantially excited by light in the vicinity of a wavelength of 400 nm or by green light. Therefore, even if the emission wavelength of the semiconductor light emitting element changes, the intensity of yellow light generated from Ce-activated YAG changes in the same way as the intensity of blue light generated from the blue phosphor, so the balance between blue light and yellow light Will not change. Therefore, in the obtained light emitting device, it is possible to generate white light having a stable balance among red light, blue light, green light, and yellow light and having excellent color rendering properties and white balance stability. Such a light-emitting device capable of generating white light composed of four component lights is particularly suitable for lighting applications where color rendering is important.

本発明の半導体発光装置は、半導体発光素子を励起光源に用いながらも、演色性にもホワイトバランスの安定性にも優れた良質な白色光を生成させることができるので、照明用光源やカラー液晶表示装置のバックライト用光源として好ましく使用できる。   The semiconductor light-emitting device of the present invention can generate high-quality white light excellent in color rendering and white balance stability while using a semiconductor light-emitting element as an excitation light source. It can be preferably used as a light source for a backlight of a display device.

前述の通り、本発明は赤色蛍光体としてＭ2ＸＦ6：Ｍｎ（ここで、ＭはＬｉ，Ｎａ，Ｋ，Ｒｂ，ＣｓおよびＮＨ4からなる群から選ばれる一種以上を含有し、ＸはＧｅ、Ｓｉ，Ｓｎ，ＴｉおよびＺｒからなる群より選ばれる１種以上を含有する）で表されるＭｎ付活フルオロ錯体塩系蛍光体を用いることをひとつの特徴としている。
Ｍｎ付活フルオロ錯体塩系蛍光体の中でも好ましいのは、上記化学式においてＭがＫ（カリウム）またはＮａ（ナトリウム）から選ばれる１種以上であり、ＸがＳｉ（ケイ素）であるものである。その中でもより好ましいのは、Ｍ全量に占めるＫの比率が９０モル％以上、特に９７モル％以上、更には９９モル％以上のものである。
付活元素はＭｎ（マンガン）が１００％であることが望ましいが、限定されるものではなく、付活元素の全量に対し１０モル％未満の範囲でＴｉ、Ｚｒ、Ｇｅ、Ｓｎ、Ａｌ、Ｇａ、Ｂ、Ｉｎ、Ｃｒ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｎｂ、Ｍｏ、Ｒｕ、Ａｇ、Ｚｎ、Ｍｇなどを含んでいてもよい。
ＸがＳｉの場合、ＳｉとＭｎとの合計におけるＭｎの割合は、０．５モル％〜１０モル％の範囲内であることが望ましい。 As described above, the present invention includes M 2 XF 6 : Mn (wherein M is one or more selected from the group consisting of Li, Na, K, Rb, Cs and NH 4) , and X is Ge. One feature is the use of a Mn-activated fluoro complex salt-based phosphor represented by the formula (1) containing at least one selected from the group consisting of Si, Sn, Ti and Zr.
Among the Mn-activated fluorocomplex salt-based phosphors, those in which M is one or more selected from K (potassium) or Na (sodium) and X is Si (silicon) are preferable. Of these, the ratio of K in the total amount of M is 90 mol% or more, particularly 97 mol% or more, and more preferably 99 mol% or more.
The activator element is preferably 100% Mn (manganese), but is not limited, and Ti, Zr, Ge, Sn, Al, Ga in a range of less than 10 mol% with respect to the total amount of the activator element. , B, In, Cr, Fe, Co, Ni, Cu, Nb, Mo, Ru, Ag, Zn, Mg, and the like may be included.
When X is Si, the ratio of Mn in the sum of Si and Mn is preferably in the range of 0.5 mol% to 10 mol%.

ＭＸＦの製造方法については特許文献２または特許文献３を参照すればよいが、ここでは一例としてＫ2ＳｉＦ6：Ｍｎの合成例を説明する。
工程１
ＫＦ粉体またはＫＨＦ2粉体をフッ化水素酸（４７．３重量％）に溶解させてから、ＫＭｎＯ4粉体をこの溶液に溶解させる。溶液を攪拌しながら過酸化水素水を滴下していくと、ＫＭｎＯ4とＨ2Ｏ2とのモル比が１．５になった時に黄色い沈澱物が得られる。その沈澱物をアセトンで洗浄した後１３０℃で１時間乾燥させることによりＫ2ＭｎＦ6が得られる。
工程２
蛍光体の各原料の仕込み組成がＫ2Ｓｉ0.9Ｍｎ0.1Ｆ6となるように、Ｋ2ＳｉＦ6（１．７７８３ｇ）とＫ2ＭｎＦ6（０．２２１７ｇ）を大気圧下、室温の下で、フッ化水素酸（４７．３重量％）７０ｍｌに添加して溶解させる。各原料化合物が完全に溶解した後、溶液を攪拌しながらアセトン７０ｍｌを２４０ｍｌ／ｈｒの速度で添加して蛍光体を析出させる。析出物をエタノールで洗浄し、１３０℃で１時間乾燥させることにより１．７ｇの蛍光体Ｋ2ＳｉＦ6：Ｍｎが得られる。
得られる蛍光体におけるＳｉとＭｎのモル比は、ＥＤＸ（エネルギー分散Ｘ線分析）法による組成分析から知ることができる。このモル比は仕込み組成を変更することにより調整することができる。 As for the manufacturing method of MXF, Patent Document 2 or Patent Document 3 may be referred to, but here, a synthesis example of K 2 SiF 6 : Mn will be described as an example.
Process 1
KF powder or KHF 2 powder is dissolved in hydrofluoric acid (47.3% by weight), and then KMnO 4 powder is dissolved in this solution. When hydrogen peroxide is added dropwise while stirring the solution, a yellow precipitate is obtained when the molar ratio of KMnO 4 and H 2 O 2 reaches 1.5. The precipitate is washed with acetone and dried at 130 ° C. for 1 hour to obtain K 2 MnF 6 .
Process 2
K 2 SiF 6 (1.7783 g) and K 2 MnF 6 (0.2217 g) were added under atmospheric pressure and room temperature so that the charged composition of each raw material of the phosphor was K 2 Si 0.9 Mn 0.1 F 6. Add to 70 ml of hydrofluoric acid (47.3% by weight) and dissolve. After each raw material compound is completely dissolved, 70 ml of acetone is added at a rate of 240 ml / hr while stirring the solution to precipitate the phosphor. The precipitate is washed with ethanol and dried at 130 ° C. for 1 hour to obtain 1.7 g of phosphor K 2 SiF 6 : Mn.
The molar ratio of Si and Mn in the obtained phosphor can be known from composition analysis by EDX (energy dispersive X-ray analysis) method. This molar ratio can be adjusted by changing the charged composition.

上記工程１および工程２を実際に行うことにより得たＫ2ＳｉＦ6：Ｍｎの励起スペクトルおよび発光スペクトルを図１に示す。励起スペクトルは波長３５０ｎｍ付近と波長４５０ｎｍ〜４６０ｎｍの範囲にそれぞれピークを有しており、青色光により効率よく励起可能であること、また、波長４００ｎｍ付近では励起効率が低いことが分かる。また、発光スペクトルは波長６３０ｎｍに半値幅６ｎｍの鋭いピークを有している。 FIG. 1 shows an excitation spectrum and an emission spectrum of K 2 SiF 6 : Mn obtained by actually performing the above steps 1 and 2. The excitation spectrum has peaks in the vicinity of a wavelength of 350 nm and in the range of wavelengths of 450 nm to 460 nm, and it can be seen that excitation can be efficiently performed with blue light, and that the excitation efficiency is low in the vicinity of a wavelength of 400 nm. The emission spectrum has a sharp peak at a wavelength of 630 nm and a half width of 6 nm.

青色蛍光体として用いるＥｕ付活アルミン酸塩系蛍光体、緑色蛍光体として用いるＥｕおよびＭｎ付活アルミン酸塩系蛍光体、および、黄色蛍光体として用いるＣｅ付活ＹＡＧは、それぞれ公知の物質であり、その製造方法等については従来技術を適宜参照することができる。
本発明における好ましい青色蛍光体であるＢａＭｇＡｌ10Ｏ17：Ｅｕの励起スペクトルおよび発光スペクトルを図２に示す。また、本発明における好ましい緑色蛍光体であるＢａＭｇＡｌ10Ｏ17：Ｅｕ，Ｍｎの励起スペクトルおよび発光スペクトルを図３に示す。 Eu-activated aluminate phosphors used as blue phosphors, Eu and Mn activated aluminate phosphors used as green phosphors, and Ce-activated YAG used as yellow phosphors are known materials, respectively. Yes, the prior art can be referred to as appropriate for the manufacturing method and the like.
FIG. 2 shows the excitation spectrum and emission spectrum of BaMgAl 10 O 17 : Eu, which is a preferred blue phosphor in the present invention. FIG. 3 shows the excitation spectrum and emission spectrum of BaMgAl 10 O 17 : Eu, Mn, which is a preferred green phosphor in the present invention.

本発明の半導体発光装置において、青色蛍光体および緑色蛍光体の励起に用いる半導体発光素子にはＧａＮ系発光素子を好適に用いることができる。ＧａＮ系発光素子とは、ＰＮ接合構造、ＭＩＳ構造などの発光素子構造を一般式ＩｎxＧａyＡｌ1-x-yＮで表されるＧａＮ系半導体で形成したＬＥＤやＬＤ（レーザダイオード）である。現在では、ダブルヘテロＰＮ接合型の素子構造を採用するとともに、発光層を井戸層および障壁層からなる多重量子井戸構造とした高輝度のＧａＮ系発光素子が市販されている。このようなＧａＮ系発光素子の発光波長は井戸層を形成するＧａＮ系半導体の組成により制御することができる。青色蛍光体に用いるＥｕ付活アルミン酸塩系蛍光体と緑色蛍光体に用いるＥｕおよびＭｎ付活アルミン酸塩系蛍光体の励起特性を考慮すると、ＧａＮ系半導体発光素子の主発光波長は好ましくは４１０ｎｍ以下、より好ましくは４００ｎｍ以下である。 In the semiconductor light emitting device of the present invention, a GaN-based light emitting element can be suitably used as the semiconductor light emitting element used for exciting the blue phosphor and the green phosphor. A GaN-based light-emitting element is an LED or LD (laser diode) in which a light-emitting element structure such as a PN junction structure or a MIS structure is formed of a GaN-based semiconductor represented by the general formula In x Ga y Al 1-xy N. Currently, a high-brightness GaN-based light-emitting element that employs a double hetero PN junction type element structure and has a light-emitting layer having a multiple quantum well structure including a well layer and a barrier layer is commercially available. The emission wavelength of such a GaN-based light-emitting element can be controlled by the composition of the GaN-based semiconductor that forms the well layer. Considering the excitation characteristics of the Eu-activated aluminate phosphor used for the blue phosphor and the Eu and Mn-activated aluminate phosphor used for the green phosphor, the main emission wavelength of the GaN-based semiconductor light emitting device is preferably It is 410 nm or less, More preferably, it is 400 nm or less.

Ｉｎを含むＧａＮ系半導体で井戸層を形成したＧａＮ系発光素子は、当該層の内部でＩｎ濃度が自発的に不均一化し、Ｉｎ濃度が局所的に高くなった領域において発光再結合が促進されるために、発光層中に貫通転位と呼ばれる結晶欠陥が高密度に存在するにもかかわらず、極めて高い発光効率を示す。しかし、ＩｎxＧａyＮ（ｘ＋ｙ＝１）からなる井戸層を用いて３８０ｎｍ〜４００ｎｍという短波長光を発生させようとすると、井戸層のＩｎ組成ｘを低く抑えなくてはならず、そのためにＩｎ濃度の不均一化による上記の効果が小さくなり、特に、温度上昇に伴う素子の発光効率の低下が顕著となってくる。
この問題を改善するためには、ＡｌおよびＩｎを含む多重量子井戸構造の発光層を採用することが望ましい。Ａｌの添加はＧａＮ系半導体のバンドギャップを大きくする働きがあるので、例えば、井戸層をＡｌおよびＩｎを含むＩｎＧａＡｌＮで形成すると、Ｉｎ含有量を低く抑えることなく、発光波長を短くすることができる。あるいは、井戸層はＩｎＧａＮで形成する一方、障壁層にＡｌを添加すると、井戸層と障壁層とのバンドギャップ差が大きくなるためにキャリアが井戸層に留まる時間が長くなり、井戸層における発光再結合が促進される。 In a GaN-based light emitting device in which a well layer is formed of a GaN-based semiconductor containing In, the In concentration spontaneously becomes nonuniform within the layer, and light emission recombination is promoted in a region where the In concentration is locally high. Therefore, even though crystal defects called threading dislocations exist in the light emitting layer at a high density, extremely high light emission efficiency is exhibited. However, when trying to generate light having a short wavelength of 380 nm to 400 nm using a well layer made of In x Ga y N (x + y = 1), the In composition x of the well layer must be kept low. The above-mentioned effect due to the non-uniformity of the In concentration is reduced, and in particular, the decrease in the light emission efficiency of the element accompanying the temperature rise becomes remarkable.
In order to improve this problem, it is desirable to employ a light emitting layer having a multiple quantum well structure containing Al and In. Since the addition of Al serves to increase the band gap of the GaN-based semiconductor, for example, when the well layer is formed of InGaAlN containing Al and In, the emission wavelength can be shortened without reducing the In content. . Alternatively, when the well layer is formed of InGaN and Al is added to the barrier layer, the band gap difference between the well layer and the barrier layer increases, so that the time for the carriers to stay in the well layer increases, and the light emission in the well layer is regenerated. Bonding is promoted.

本発明の半導体発光装置は、既に説明した通り、半導体発光素子が放出する光により青色および緑色の蛍光体が励起され、このうち青色蛍光体が放出する光の一部により赤色蛍光体（黄色蛍光体を用いる場合は赤色蛍光体および黄色蛍光体）が励起され、各蛍光体から生じる光が同時に当該発光装置から外部に放射されるように構成される。本発明の半導体発光装置は、蛍光体の具体的な固定化方法であるとか、半導体発光素子と蛍光体との具体的な結合方法や結合構造などにより限定されるものではない。本発明の半導体発光装置を作るにあたり必要となる、蛍光体の固定化方法や、半導体発光素子と蛍光体との結合方法や結合構造などについては、公知技術を適宜参照すればよい   In the semiconductor light emitting device of the present invention, as already described, the blue and green phosphors are excited by the light emitted from the semiconductor light emitting element, and the red phosphor (yellow fluorescent light) is produced by a part of the light emitted from the blue phosphor. When a body is used, red phosphor and yellow phosphor) are excited, and light generated from each phosphor is simultaneously emitted to the outside from the light emitting device. The semiconductor light-emitting device of the present invention is not limited by a specific method for fixing a phosphor, or by a specific bonding method or bonding structure between the semiconductor light-emitting element and the phosphor. For the phosphor immobilization method, the semiconductor light-emitting element-phosphor bonding method, the bonding structure, and the like, which are necessary for manufacturing the semiconductor light-emitting device of the present invention, known techniques may be referred to as appropriate.

一実施形態において、本発明の半導体発光装置は、パッケージ、リードフレーム、ユニット基板等に固定された１つ以上の半導体発光素子と、これを埋め込んだ透光性の被覆部材を含む。この被覆部材は単層構造であってもよいし多層構造を有していてもよい。この被覆部材のベース材料に限定はなく、樹脂であってもよいしガラスであってもよい。被覆部材が多層構造である場合には、層毎にベース材料が異なっていてもよい。樹脂材料としては、エポキシ樹脂などと比べて短波長光により劣化し難いシリコーン樹脂が好ましい。この被覆部材中には増量や屈折率調整の目的で、シリカ微粒子、ジルコニア微粒子、チタニア微粒子のような無色透明の金属酸化物微粒子を分散することができる。この被覆部材の成形方法に限定はなく、例えば、モールドやポッティングなどであってもよい。被覆部材が多層構造である場合には、層毎に異なる方法で成形してもよい。
蛍光体は上記被覆部材のいずれかの層内に固定化することができる。全部の蛍光体を混合してひとつの層内に固定化することもできるし、あるいは、赤色蛍光体を分散した赤色蛍光体層、青色蛍光体を分散した青色蛍光体層、緑色蛍光体を分散した緑色蛍光体層、黄色蛍光体を分散した黄色蛍光体層をそれぞれ設けることもできる。
蛍光体を透明な樹脂やガラス中に分散固定化した板状ないし膜状の蛍光部材を別途形成し、これを上記被覆部材の外部に設置することもできる。蛍光体の一部を上記被覆部材の内部に固定化し、他の一部を外部の蛍光部材中に固定化することもできる。上記被覆部材の外部に蛍光部材を設置した場合に、被覆部材と蛍光部材との間に形成される空間の全部または一部を透明材料（樹脂、ガラス、高分子液体など）で充たすことができる。 In one embodiment, the semiconductor light-emitting device of the present invention includes one or more semiconductor light-emitting elements fixed to a package, a lead frame, a unit substrate, and the like, and a light-transmitting covering member embedded therein. The covering member may have a single layer structure or a multilayer structure. There is no limitation in the base material of this coating | coated member, Resin may be sufficient and glass may be sufficient. When the covering member has a multilayer structure, the base material may be different for each layer. The resin material is preferably a silicone resin that is less likely to be deteriorated by short-wavelength light than an epoxy resin or the like. In this covering member, colorless and transparent metal oxide fine particles such as silica fine particles, zirconia fine particles, and titania fine particles can be dispersed for the purpose of increasing the amount and adjusting the refractive index. There is no limitation on the method of forming the covering member, and for example, molding or potting may be used. When the covering member has a multilayer structure, the layers may be formed by different methods.
The phosphor can be immobilized in any layer of the covering member. All phosphors can be mixed and fixed in one layer, or red phosphor layer with dispersed red phosphor, blue phosphor layer with dispersed blue phosphor, and green phosphor dispersed A green phosphor layer and a yellow phosphor layer in which a yellow phosphor is dispersed can also be provided.
It is also possible to separately form a plate-like or film-like fluorescent member in which the phosphor is dispersed and fixed in a transparent resin or glass, and install this on the outside of the covering member. A part of the phosphor can be fixed inside the covering member, and the other part can be fixed in the external fluorescent member. When a fluorescent member is installed outside the covering member, all or part of the space formed between the covering member and the fluorescent member can be filled with a transparent material (resin, glass, polymer liquid, etc.). .

本発明の半導体発光装置は、また、パッケージ、リードフレーム、ユニット基板等に固定された１つ以上の半導体発光素子と、半導体発光素子の固定部位から離れた位置に固定化された蛍光体と、半導体発光素子が放出する光をこの蛍光体に導くための導光板あるいは導波路（例えば、光ファイバ）と、を含むものであってもよい。   The semiconductor light-emitting device of the present invention also includes one or more semiconductor light-emitting elements fixed to a package, a lead frame, a unit substrate, and the like, and a phosphor fixed at a position away from a fixing portion of the semiconductor light-emitting element, A light guide plate or a waveguide (for example, an optical fiber) for guiding the light emitted from the semiconductor light emitting element to the phosphor may be included.

図４に本発明の一実施形態に係る半導体発光装置の模式断面図を示す。この図に示す発光装置１００は、ＳＭＤ（表面実装）型ＬＥＤであり、パッケージ１０に設けられたキャビティ（カップ状部分）の底面上にＧａＮ系発光素子２０が接着剤（図示せず）を用いて固定されている。
パッケージ１０は、セラミック（アルミナ、ＡｌＮなど）、白色樹脂などで形成されたパッケージ基板１１と、二つのパッケージ電極１２と、リフレクタ１３とから構成されている。この図ではパッケージ基板１１とリフレクタ１３とを別個の部材のように示しているが、これらは一体的に形成されていてもよい。
パッケージ基板１１上に固定されたＧａＮ系発光素子２０は４００ｎｍ付近に主発光波長を有するものである。このＧａＮ系発光素子は、サファイア、ＳｉＣ、ＧａＮなどからなる素子基板２１と、その上に形成された、ダブルヘテロＰＮ接合型のＬＥＤ構造を備えたＧａＮ系半導体膜２２とを有しており、そのＧａＮ系半導体膜２２上に、正負の電極が形成されている。正電極は、透明導電性酸化物（ＴＣＯ：Transparent Conductive Oxide）からなる透明電極２３ａと、その一部上に形成された金属製のボンディングパッド２３ｂとから構成されている。負電極も、ＴＣＯからなる透明電極２４ａと、その一部上に形成された金属製のボンディングパッド２４ｂとから構成されている。素子基板２１の下面には金属製の反射膜２５が形成されている。
ＧａＮ系発光素子２０の正電極および負電極のそれぞれは、ＡｕまたはＣｕからなるボンディングワイヤ３０により、２つのパッケージ電極１２のそれぞれに接続されている。
ＧａＮ系発光素子２０は透光性の被覆部材４０により埋め込まれている。被覆部材４０は内層部４１と外層部４２とを有しており、２本のボンディングワイヤ３０は内層部４１に埋め込まれている。
蛍光体（図示せず）は被覆部材４０中に固定化されており、とりわけ、赤色蛍光体は内層部４１に固定化されており、青色蛍光体および緑色蛍光体は外層部４２に固定化されている。黄色蛍光体を用いる場合には外層部４２に固定化することが望ましい。 FIG. 4 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. The light emitting device 100 shown in this figure is an SMD (surface mounted) LED, and the GaN-based light emitting element 20 uses an adhesive (not shown) on the bottom surface of a cavity (cup-shaped portion) provided in the package 10. Is fixed.
The package 10 includes a package substrate 11 formed of ceramic (alumina, AlN, etc.), white resin, etc., two package electrodes 12, and a reflector 13. In this figure, the package substrate 11 and the reflector 13 are shown as separate members, but they may be integrally formed.
The GaN-based light emitting device 20 fixed on the package substrate 11 has a main emission wavelength in the vicinity of 400 nm. This GaN-based light emitting device has an element substrate 21 made of sapphire, SiC, GaN, and the like, and a GaN-based semiconductor film 22 having a double hetero PN junction type LED structure formed thereon, Positive and negative electrodes are formed on the GaN-based semiconductor film 22. The positive electrode is composed of a transparent electrode 23a made of transparent conductive oxide (TCO) and a metal bonding pad 23b formed on a part thereof. The negative electrode is also composed of a transparent electrode 24a made of TCO and a metal bonding pad 24b formed on a part thereof. A metal reflective film 25 is formed on the lower surface of the element substrate 21.
Each of the positive electrode and the negative electrode of the GaN-based light emitting element 20 is connected to each of the two package electrodes 12 by a bonding wire 30 made of Au or Cu.
The GaN-based light emitting element 20 is embedded with a translucent covering member 40. The covering member 40 has an inner layer portion 41 and an outer layer portion 42, and the two bonding wires 30 are embedded in the inner layer portion 41.
A phosphor (not shown) is fixed in the covering member 40. In particular, the red phosphor is fixed to the inner layer portion 41, and the blue phosphor and the green phosphor are fixed to the outer layer portion 42. ing. When using a yellow phosphor, it is desirable to fix it to the outer layer portion 42.

発光装置１００において、ＧａＮ系発光素子２０から放出される波長４００ｎｍ付近の光は、被覆部材４０の内層部４１に固定化された赤色蛍光体によっては実質的に吸収されることなく外層部４２に達し、そこで青色蛍光体および緑色蛍光体を励起させる。青色蛍光体から生じる青色光は方向性を有さないので、その一部は内層部４１側に向かって進み、赤色蛍光体を励起させることになる。赤色蛍光体から生じる赤色光は直接、あるいはパッケージ基板１１、パッケージ電極１２、リフレクタ１３またはボンディングワイヤ３０の表面で反射されて、外層部４２側に向かって進み、これを透過して発光装置１００の外部に放射される。   In the light emitting device 100, light having a wavelength of about 400 nm emitted from the GaN-based light emitting element 20 is not substantially absorbed by the red phosphor fixed on the inner layer portion 41 of the covering member 40 and is not absorbed by the outer layer portion 42. Where the blue and green phosphors are excited. Since the blue light generated from the blue phosphor does not have directionality, a part of the blue light proceeds toward the inner layer portion 41 and excites the red phosphor. The red light generated from the red phosphor is reflected directly or on the surface of the package substrate 11, the package electrode 12, the reflector 13, or the bonding wire 30, travels toward the outer layer portion 42 side, passes through this, and passes through the light emitting device 100. Radiated to the outside.

発光装置１００において、被覆部材４０の内層部４１に赤色蛍光体を、外層部４２に青色蛍光体を固定化しているのは、ボンディングワイヤ３０の近傍では青色光を発生させないで、赤色光を発生させるようにするためである。その理由は、ボンディングワイヤ３０の材料であるＡｕまたはＣｕは青色光を強く吸収するのに対し、赤色光に対しては強い吸収を示さないからである。外層部４２に固定化した青色蛍光体から生じる青色光のうち、内層部４１に入射するのはその一部であり、更に内層部４１に入射すると青色光は赤色蛍光体によって赤色光に変換されるので、青色光がボンディングワイヤ３０に吸収されることによる損失が減少することになる。なお、このような損失低減効果の発生に必要な条件は、赤色蛍光体が青色蛍光体により励起され得ることである（蛍光体の種類にはよらない）。このことは、本技術分野における当業者であれば理解されよう。   In the light emitting device 100, the red phosphor is fixed to the inner layer portion 41 of the covering member 40 and the blue phosphor is fixed to the outer layer portion 42. The red light is generated in the vicinity of the bonding wire 30 without generating blue light. This is to make it happen. The reason is that Au or Cu as the material of the bonding wire 30 strongly absorbs blue light, but does not exhibit strong absorption for red light. Of the blue light generated from the blue phosphor immobilized on the outer layer portion 42, only a portion of the blue light is incident on the inner layer portion 41. When the blue light is further incident on the inner layer portion 41, the blue light is converted into red light by the red phosphor. Therefore, the loss due to the blue light being absorbed by the bonding wire 30 is reduced. Note that a necessary condition for generating such a loss reduction effect is that the red phosphor can be excited by the blue phosphor (regardless of the type of phosphor). This will be appreciated by those skilled in the art.

発光装置１００において、被覆部材４０の内層部４１に赤色蛍光体を固定化するにあたっては、内層部４１の全体にわたって赤色蛍光体を分散させてもよいし、あるいは、内層部４１の中でも外層部４２に隣接する部分に、赤色蛍光体を分散させた領域を層状に形成してもよい。また、被覆部材４０の外層部４２には青色蛍光体と緑色蛍光体を混合した状態で分散させてもよいし、あるいは、青色蛍光体を分散させた層状領域と緑色蛍光体を分散させた層状領域とをそれぞれ外層部４２内に設けてもよい。   In the light emitting device 100, when fixing the red phosphor to the inner layer portion 41 of the covering member 40, the red phosphor may be dispersed throughout the inner layer portion 41, or the outer layer portion 42 in the inner layer portion 41. A region in which the red phosphor is dispersed may be formed in a layered manner in a portion adjacent to. Further, the outer layer portion 42 of the covering member 40 may be dispersed in a state where the blue phosphor and the green phosphor are mixed, or alternatively, a layered region in which the blue phosphor is dispersed and a layered state in which the green phosphor is dispersed. Each region may be provided in the outer layer portion 42.

ドミナント発光波長３９０ｎｍ〜４００ｎｍで発光する近紫外ＬＥＤとして、Ｃｒｅｅ社製の２９０μｍ角チップＣ３９５ＭＢ２９０を用い、それをシリコーン樹脂ベースの透明ダイボンドペーストで、３５２８ＳＭＤ型ＰＰＡ樹脂パッケージの凹部の底の端子に接着した。その後に、１５０℃で２時間加熱し、透明ダイボンドペーストを硬化させた後、近紫外ＬＥＤとパッケージの電極とを直径２５μｍの金線を用いてワイヤーボンディングした。   As a near-ultraviolet LED that emits light with a dominant emission wavelength of 390 nm to 400 nm, a 290 μm square chip C395MB290 manufactured by Cree was used, and this was bonded to a terminal at the bottom of a recess of a 3528 SMD type PPA resin package with a silicone resin-based transparent die bond paste. . Then, after heating at 150 degreeC for 2 hours and hardening a transparent die-bonding paste, near ultraviolet LED and the electrode of the package were wire-bonded using the gold wire with a diameter of 25 micrometers.

一方、発光ピーク波長４５５ｍｍ、発光ピーク半値幅５１ｎｍのＢａ0.7Ｅｕ0.3ＭｇＡｌ10Ｏ17 （青色蛍光体）０．１３５ｇと、発光ピーク波長５１７ｎｍ、発光ピーク半値幅が２７ｎｍのＢａＭｇＡｌ10Ｏ17：Ｅｕ，Ｍｎ（緑色蛍光体）０．０９６ｇと、Ｋ2ＳｉＦ6：Ｍｎ（赤色蛍光体）０．３３１ｇと、東レ・ダウコーニング社製シリコーン樹脂（ＪＣＲ６１０１ｕｐ）１．０８３ｇとを秤量し、シンキー社製攪拌脱泡装置ＡＲ−１００にて混合し、蛍光体含有組成物を得た。 On the other hand, 0.135 g of Ba 0.7 Eu 0.3 MgAl 10 O 17 (blue phosphor) having an emission peak wavelength of 455 mm and an emission peak half width of 51 nm, and BaMgAl 10 O 17 : Eu, having an emission peak wavelength of 517 nm and an emission peak half width of 27 nm. Weigh 0.096 g of Mn (green phosphor), 0.331 g of K 2 SiF 6 : Mn (red phosphor), and 1.083 g of silicone resin (JCR6101up) manufactured by Toray Dow Corning Co., Ltd. The phosphor-containing composition was obtained by mixing with a defoaming device AR-100.

次に、ディスペンサーを用いて上記のように得られた蛍光体含有組成物４μｌを、前記近紫外ＬＥＤを設置したＳＭＤ型樹脂パッケージの凹部に注液した。この後、７０℃で１時間、次いで１５０℃で５時間加熱して蛍光体含有組成物を硬化させ、半導体発光装置を得た。   Next, 4 μl of the phosphor-containing composition obtained as described above using a dispenser was injected into the concave portion of the SMD type resin package in which the near ultraviolet LED was installed. Thereafter, the phosphor-containing composition was cured by heating at 70 ° C. for 1 hour and then at 150 ° C. for 5 hours to obtain a semiconductor light emitting device.

上記作製した半導体発光装置の近紫外ＬＥＤに２０ｍＡの電流を供給して発光させた。その発光のＣＩＥ色度座標値を測定したところ、ｘ／ｙ＝０．２７７／０．３１５であった。得られた発光スペクトルを図５に示す。近紫外ＬＥＤからの光出力に対する、半導体発光装置からの白色の光束は２２７ルーメン／Ｗだった。   A current of 20 mA was supplied to the near-ultraviolet LED of the semiconductor light-emitting device produced above to emit light. The CIE chromaticity coordinate value of the emitted light was measured and found to be x / y = 0.277 / 0.315. The obtained emission spectrum is shown in FIG. The white luminous flux from the semiconductor light emitting device with respect to the light output from the near ultraviolet LED was 227 lumen / W.

上記作製した半導体発光装置を液晶バックライト用のカラーフィルターと組み合わせて得たカラー画像表示装置について色度（ｘ、ｙ、Ｙ）、色再現性（ＮＴＳＣ比）、および色調（色温度）を算出したところ、それぞれ、（０．３１１，０．３４７，２７．９％）、１１０％および６４９３Ｋであった。   Calculation of chromaticity (x, y, Y), color reproducibility (NTSC ratio), and color tone (color temperature) for a color image display device obtained by combining the semiconductor light-emitting device produced above with a color filter for a liquid crystal backlight. As a result, they were (0.311, 0.347, 27.9%), 110%, and 6493K, respectively.

Ｋ2ＳｉＦ6：Ｍｎの励起スペクトルおよび発光スペクトルを示す図である。K 2 SiF 6: a diagram showing the excitation and emission spectra of Mn. ＢａＭｇＡｌ10Ｏ17：Ｅｕの励起スペクトルおよび発光スペクトルを示す図である。BaMgAl 10 O 17: a diagram showing the excitation and emission spectra of Eu. ＢａＭｇＡｌ10Ｏ17：Ｅｕ，Ｍｎの励起スペクトルおよび発光スペクトルを示す図である。BaMgAl 10 O 17: Eu, is a diagram showing the excitation and emission spectra of Mn. 本発明の一実施形態に係る半導体発光装置の模式断面図である。1 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. 本発明の一実施形態に係る半導体発光装置の発光スペクトルを示すチャートである。It is a chart which shows the emission spectrum of the semiconductor light-emitting device concerning one Embodiment of this invention.

符号の説明Explanation of symbols

１００ 半導体発光装置
１０ パッケージ
２０ ＧａＮ系発光素子
３０ ボンディングワイヤ
４０ 被覆部材
４１ 内層部
４２ 外層部 DESCRIPTION OF SYMBOLS 100 Semiconductor light-emitting device 10 Package 20 GaN-type light emitting element 30 Bonding wire 40 Cover member 41 Inner layer part 42 Outer layer part

Claims (6)

赤色蛍光体から生じる赤色光と、青色蛍光体から生じる青色光と、緑色蛍光体から生じる緑色光と、を同時に放射する発光装置であって、
前記赤色蛍光体がＭｎ付活フルオロ錯体塩系蛍光体であり、
前記青色蛍光体がＥｕ付活アルミン酸塩系蛍光体であり、
前記緑色蛍光体がＥｕおよびＭｎ付活アルミン酸塩系蛍光体であり、
前記青色蛍光体および前記緑色蛍光体を励起するための、前記赤色蛍光体を実質的に励起しない光を放出する半導体発光素子を備え、
前記半導体発光素子が放出する光で励起されて前記青色蛍光体が放出する青色光の一部により前記赤色蛍光体が励起されるように構成した、
ことを特徴とする半導体発光装置。 A light emitting device that simultaneously emits red light generated from a red phosphor, blue light generated from a blue phosphor, and green light generated from a green phosphor,
The red phosphor is a Mn-activated fluoro complex salt phosphor,
The blue phosphor is an Eu activated aluminate phosphor,
The green phosphor is Eu and Mn activated aluminate phosphor,
A semiconductor light emitting device for emitting light that does not substantially excite the red phosphor for exciting the blue phosphor and the green phosphor;
The red phosphor is excited by a part of blue light that is excited by light emitted from the semiconductor light emitting device and emitted from the blue phosphor.
A semiconductor light-emitting device. 赤色蛍光体から生じる赤色光と、青色蛍光体から生じる青色光と、緑色蛍光体から生じる緑色光と、黄色蛍光体から生じる黄色光と、を同時に放射する発光装置であって、
前記赤色蛍光体がＭｎ付活フルオロ錯体塩系蛍光体であり、
前記青色蛍光体がＥｕ付活アルミン酸塩系蛍光体であり、
前記緑色蛍光体がＥｕおよびＭｎ付活アルミン酸塩系蛍光体であり、
前記黄色蛍光体がＣｅ付活ＹＡＧ系蛍光体であり、
前記青色蛍光体および緑色蛍光体を励起するための、前記赤色蛍光体および黄色蛍光体を実質的に励起しない光を放出する半導体発光素子を備え、
前記半導体発光素子が放出する光で励起されて前記青色蛍光体が放出する青色光の一部により前記赤色蛍光体および黄色蛍光体が励起されるように構成した、
ことを特徴とする半導体発光装置。 A light emitting device that simultaneously emits red light generated from a red phosphor, blue light generated from a blue phosphor, green light generated from a green phosphor, and yellow light generated from a yellow phosphor,
The red phosphor is a Mn-activated fluoro complex salt phosphor,
The blue phosphor is an Eu activated aluminate phosphor,
The green phosphor is Eu and Mn activated aluminate phosphor,
The yellow phosphor is a Ce-activated YAG phosphor,
A semiconductor light emitting device for emitting light that does not substantially excite the red phosphor and the yellow phosphor for exciting the blue phosphor and the green phosphor;
The red phosphor and the yellow phosphor are configured to be excited by a part of blue light that is excited by light emitted from the semiconductor light emitting device and emitted from the blue phosphor.
A semiconductor light-emitting device. 前記赤色蛍光体がＭ2ＳｉＦ6：Ｍｎ（ここで、ＭはＮａおよびＫからなる群から選ばれる一種以上を含有する）である、請求項１または２に記載の半導体発光装置。 3. The semiconductor light emitting device according to claim 1, wherein the red phosphor is M 2 SiF 6 : Mn (where M contains one or more selected from the group consisting of Na and K). 前記青色蛍光体がＢａＭｇＡｌ10Ｏ17：Ｅｕであり、前記緑色蛍光体がＢａＭｇＡｌ10Ｏ17：Ｅｕ，Ｍｎである、請求項１〜３のいずれかに記載の半導体発光装置。 The semiconductor light-emitting device according to claim 1, wherein the blue phosphor is BaMgAl 10 O 17 : Eu, and the green phosphor is BaMgAl 10 O 17 : Eu, Mn. 前記半導体発光素子の発光波長が３８０ｎｍ〜４００ｎｍである、請求項１〜４のいずれかに記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, wherein an emission wavelength of the semiconductor light-emitting element is 380 nm to 400 nm. 前記半導体発光素子がＡｌおよびＩｎを含む多重量子井戸構造の発光層を備えたＧａＮ系発光素子である、請求項５に記載の半導体発光装置。   6. The semiconductor light emitting device according to claim 5, wherein the semiconductor light emitting element is a GaN-based light emitting element including a light emitting layer having a multiple quantum well structure containing Al and In.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012147611A1 (en) * 2011-04-26 2012-11-01 サンユレック株式会社 Method and apparatus for manufacturing optical device
JP2014022508A (en) * 2012-07-17 2014-02-03 Konica Minolta Inc Led device and manufacturing method of the same
JP2017126743A (en) * 2016-01-12 2017-07-20 シチズン電子株式会社 LED package
JP2017531324A (en) * 2014-10-08 2017-10-19 ソウル セミコンダクター カンパニー リミテッド Light emitting device
US9806236B2 (en) 2013-10-15 2017-10-31 Sharp Kabushiki Kaisha Light-emitting device and method for producing the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031531A (en) * 1998-07-14 2000-01-28 Toshiba Electronic Engineering Corp Light emitter
WO2003032407A1 (en) * 2001-10-01 2003-04-17 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting element and light emitting device using this
JP2005232305A (en) * 2004-02-19 2005-09-02 Nichia Chem Ind Ltd Fluorescent substance of alkaline earth metal aluminate, and light-emitting device using the same
JP2007165728A (en) * 2005-12-15 2007-06-28 Toshiba Discrete Technology Kk Light-emitting device and lighting device for visible light communication
JP2007201301A (en) * 2006-01-30 2007-08-09 Sumitomo Metal Electronics Devices Inc Light emitting device using white led
JP2008071806A (en) * 2006-09-12 2008-03-27 C I Kasei Co Ltd Light emitting device
JP2008208238A (en) * 2007-02-27 2008-09-11 Showa Denko Kk Fluorescent substance and method for producing the same and lighting apparatus and image display device equipped with the same
JP2009528429A (en) * 2006-02-28 2009-08-06 ルミネイション リミテッド ライアビリティ カンパニー Red line emitting phosphors for use in light emitting diode applications

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031531A (en) * 1998-07-14 2000-01-28 Toshiba Electronic Engineering Corp Light emitter
WO2003032407A1 (en) * 2001-10-01 2003-04-17 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting element and light emitting device using this
JP2005232305A (en) * 2004-02-19 2005-09-02 Nichia Chem Ind Ltd Fluorescent substance of alkaline earth metal aluminate, and light-emitting device using the same
JP2007165728A (en) * 2005-12-15 2007-06-28 Toshiba Discrete Technology Kk Light-emitting device and lighting device for visible light communication
JP2007201301A (en) * 2006-01-30 2007-08-09 Sumitomo Metal Electronics Devices Inc Light emitting device using white led
JP2009528429A (en) * 2006-02-28 2009-08-06 ルミネイション リミテッド ライアビリティ カンパニー Red line emitting phosphors for use in light emitting diode applications
JP2008071806A (en) * 2006-09-12 2008-03-27 C I Kasei Co Ltd Light emitting device
JP2008208238A (en) * 2007-02-27 2008-09-11 Showa Denko Kk Fluorescent substance and method for producing the same and lighting apparatus and image display device equipped with the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012147611A1 (en) * 2011-04-26 2012-11-01 サンユレック株式会社 Method and apparatus for manufacturing optical device
JPWO2012147611A1 (en) * 2011-04-26 2014-07-28 サンユレック株式会社 Opto device manufacturing method and manufacturing apparatus
US9373730B2 (en) 2011-04-26 2016-06-21 Sanyu Rec Co., Ltd. Method and apparatus for manufacturing optical device
US10050158B2 (en) 2011-04-26 2018-08-14 Sanyu Rec Co., Ltd. Method and apparatus for manufacturing optical device
JP2014022508A (en) * 2012-07-17 2014-02-03 Konica Minolta Inc Led device and manufacturing method of the same
US9806236B2 (en) 2013-10-15 2017-10-31 Sharp Kabushiki Kaisha Light-emitting device and method for producing the same
JP2017531324A (en) * 2014-10-08 2017-10-19 ソウル セミコンダクター カンパニー リミテッド Light emitting device
JP7073102B2 (en) 2014-10-08 2022-05-23 ソウル セミコンダクター カンパニー リミテッド Light emitting device
US11545599B2 (en) 2014-10-08 2023-01-03 Seoul Semiconductor Co., Ltd. Light emitting device
JP2017126743A (en) * 2016-01-12 2017-07-20 シチズン電子株式会社 LED package
JP7101455B2 (en) 2016-01-12 2022-07-15 シチズン電子株式会社 LED package

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