JP2008053598A - 半導体レーザ素子および光送信モジュール - Google Patents
半導体レーザ素子および光送信モジュール Download PDFInfo
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- JP2008053598A JP2008053598A JP2006230370A JP2006230370A JP2008053598A JP 2008053598 A JP2008053598 A JP 2008053598A JP 2006230370 A JP2006230370 A JP 2006230370A JP 2006230370 A JP2006230370 A JP 2006230370A JP 2008053598 A JP2008053598 A JP 2008053598A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 230000003287 optical effect Effects 0.000 title claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- 239000011701 zinc Substances 0.000 claims description 31
- 238000005253 cladding Methods 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000004891 communication Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000000370 acceptor Substances 0.000 abstract description 32
- 238000000034 method Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 112
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 23
- 230000010355 oscillation Effects 0.000 description 13
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
【解決手段】上記課題を解決するための手段として、以下の手段の少なくとも一つを採用した。第1の手段として、回折格子構造をAlGaInAs層とした。第2の手段として、回折格子層にCをアクセプタとしてドーピングする。そして、第3の手段として、回折格子層にCおよびZnをアクセプタとしてドーピングする。
【選択図】図3
Description
Claims (5)
- 半導体基板上にn導電型のクラッド層と、活性層と、p導電型のクラッド層とを有する半導体レーザ素子において、
前記p導電型クラッド層中に少なくともAl元素を含む混晶系化合物半導体層から構成される回折格子層が形成されていることを特徴とする半導体レーザ素子。 - 請求項1記載の半導体レーザ素子であって、
前記回折格子層に炭素がドーピングされていることを特徴とする半導体レーザ素子。 - 請求項1記載の半導体レーザ素子であって、
前記回折格子層に炭素および亜鉛がドーピングされていることを特徴とする半導体レーザ素子。 - 請求項1ないし請求項3のいずれかに記載の半導体レーザ素子であって、
前記活性層は、Al、Ga、InおよびAsの元素を含むことを特徴とする半導体レーザ素子。 - ケースの中に、半導体レーザと、この通信用レーザを駆動するドライバと、前記通信用半導体レーザの出力をモニタするフォトダイオードを搭載する光送信モジュールにおいて、
前記半導体レーザは、半導体基板上にn導電型のクラッド層と、活性層と、p導電型のクラッド層とを有し、前記p導電型クラッド層中に少なくともAl元素を含む混晶系化合物半導体層から構成される回折格子層が形成されていることを特徴とする光送信モジュール。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0969667A (ja) * | 1995-08-31 | 1997-03-11 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
JPH114044A (ja) * | 1997-06-11 | 1999-01-06 | Hitachi Cable Ltd | 化合物半導体エピタキシャルウエハおよびその製造方法 |
JP2001326423A (ja) * | 2000-05-15 | 2001-11-22 | Mitsubishi Electric Corp | 半導体光素子及びその製造方法 |
JP2004079644A (ja) * | 2002-08-13 | 2004-03-11 | Fujitsu Ltd | 半導体素子 |
JP2004165608A (ja) * | 2002-09-20 | 2004-06-10 | Mitsubishi Chemicals Corp | 化合物半導体結晶及び化合物半導体デバイス |
JP2004207435A (ja) * | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 分布帰還型半導体レーザ素子 |
JP2005217195A (ja) * | 2004-01-29 | 2005-08-11 | Sumitomo Electric Ind Ltd | 光半導体デバイス、および光半導体デバイスを製造する方法 |
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2006
- 2006-08-28 JP JP2006230370A patent/JP4861095B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0969667A (ja) * | 1995-08-31 | 1997-03-11 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
JPH114044A (ja) * | 1997-06-11 | 1999-01-06 | Hitachi Cable Ltd | 化合物半導体エピタキシャルウエハおよびその製造方法 |
JP2001326423A (ja) * | 2000-05-15 | 2001-11-22 | Mitsubishi Electric Corp | 半導体光素子及びその製造方法 |
JP2004079644A (ja) * | 2002-08-13 | 2004-03-11 | Fujitsu Ltd | 半導体素子 |
JP2004165608A (ja) * | 2002-09-20 | 2004-06-10 | Mitsubishi Chemicals Corp | 化合物半導体結晶及び化合物半導体デバイス |
JP2004207435A (ja) * | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 分布帰還型半導体レーザ素子 |
JP2005217195A (ja) * | 2004-01-29 | 2005-08-11 | Sumitomo Electric Ind Ltd | 光半導体デバイス、および光半導体デバイスを製造する方法 |
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