JP2008053313A - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP2008053313A JP2008053313A JP2006225798A JP2006225798A JP2008053313A JP 2008053313 A JP2008053313 A JP 2008053313A JP 2006225798 A JP2006225798 A JP 2006225798A JP 2006225798 A JP2006225798 A JP 2006225798A JP 2008053313 A JP2008053313 A JP 2008053313A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49112—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
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- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】一つの半導体チップに、回路形成領域31と発熱素子形成領域21a〜21cとを有してなる半導体集積回路装置であって、発熱素子形成領域21a〜21cに隣接して、回路形成領域31が配置されてなり、素子上パッド61w,61o,61od,62w,62o,62odが、発熱素子形成領域21a〜21cと回路形成領域31の境界に沿って当該境界を取り囲むようにして、発熱素子形成領域21a〜21cおよび/または回路形成領域31内に複数個配置されてなる半導体集積回路装置100〜108とする。
【選択図】図1
Description
2,20a,20b,21a〜21c 発熱素子形成領域
3,30,31 回路形成領域
61w,61o,61od,62w,62o,62od 素子上パッド
71,72 (開放パッド61o,62oを連結する)配線パターン
40a,40b 熱緩衝領域
Claims (7)
- 一つの半導体チップに、能動素子による回路が形成された領域である回路形成領域と、周辺の前記回路形成領域における前記能動素子の発熱量に較べて大きな発熱量のパワー能動素子が形成された領域である発熱素子形成領域とを有してなる半導体集積回路装置であって、
前記発熱素子形成領域に隣接して、前記回路形成領域が配置されてなり、
金属層が露出した端子で、前記能動素子または前記パワー能動素子の上方に形成される素子上パッドが、前記発熱素子形成領域と前記回路形成領域の境界に沿って当該境界を取り囲むようにして、発熱素子形成領域および/または回路形成領域内に複数個配置されてなることを特徴とする半導体集積回路装置。 - 前記素子上パッドが、前記発熱素子形成領域内において、前記回路形成領域との境界から中央部に至る全面に渡って配置されてなることを特徴とする請求項1に記載の半導体集積回路装置。
- 前記素子上パッドが、格子縞の格子点に配置されてなることを特徴とする請求項1または2に記載の半導体集積回路装置。
- 前記発熱素子形成領域および/または回路形成領域内に複数個配置されてなる素子上パッドのうち、少なくとも1個の素子上パッドが、他の端子と接続されない開放パッドであることを特徴とする請求項1乃至3のいずれか一項に記載の半導体集積回路装置。
- 前記開放パッドが、前記発熱素子形成領域および/または回路形成領域内における一体の配線パターンにより、互いに連結されてなることを特徴とする請求項4に記載の半導体集積回路装置。
- 前記開放パッドに、ワイヤの他端が他の端子に接続されない他端開放ワイヤボンディングが施されていることを特徴とする請求項4または5に記載の半導体集積回路装置。
- 前記半導体チップが、リードフレームプレート上に搭載されてなることを特徴とする請求項1乃至6のいずれか一項に記載の半導体集積回路装置。
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JP2006225798A JP4929919B2 (ja) | 2006-08-22 | 2006-08-22 | 半導体集積回路装置 |
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JP2006225798A JP4929919B2 (ja) | 2006-08-22 | 2006-08-22 | 半導体集積回路装置 |
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JP2008053313A true JP2008053313A (ja) | 2008-03-06 |
JP4929919B2 JP4929919B2 (ja) | 2012-05-09 |
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JP2006225798A Expired - Fee Related JP4929919B2 (ja) | 2006-08-22 | 2006-08-22 | 半導体集積回路装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011055006A (ja) * | 2010-12-13 | 2011-03-17 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2011187650A (ja) * | 2010-03-08 | 2011-09-22 | Renesas Electronics Corp | 半導体装置 |
WO2015097962A1 (ja) * | 2013-12-25 | 2015-07-02 | パナソニック株式会社 | 半導体装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0529456A (ja) * | 1991-07-22 | 1993-02-05 | Hitachi Ltd | 半導体集積回路装置 |
JPH05218042A (ja) * | 1992-02-05 | 1993-08-27 | Toshiba Corp | 半導体装置 |
JP2000200905A (ja) * | 1999-01-06 | 2000-07-18 | Nissan Motor Co Ltd | 半導体装置 |
JP2002141436A (ja) * | 2000-11-01 | 2002-05-17 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2003007836A (ja) * | 2001-06-26 | 2003-01-10 | Toshiba Corp | 半導体チップ及び半導体モジュール |
JP2005203584A (ja) * | 2004-01-16 | 2005-07-28 | Renesas Technology Corp | 半導体装置 |
JP2007053157A (ja) * | 2005-08-16 | 2007-03-01 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2007067409A (ja) * | 2005-09-01 | 2007-03-15 | Atmel Germany Gmbh | 制御可能な周波数を生成するための半導体チップ |
-
2006
- 2006-08-22 JP JP2006225798A patent/JP4929919B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0529456A (ja) * | 1991-07-22 | 1993-02-05 | Hitachi Ltd | 半導体集積回路装置 |
JPH05218042A (ja) * | 1992-02-05 | 1993-08-27 | Toshiba Corp | 半導体装置 |
JP2000200905A (ja) * | 1999-01-06 | 2000-07-18 | Nissan Motor Co Ltd | 半導体装置 |
JP2002141436A (ja) * | 2000-11-01 | 2002-05-17 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2003007836A (ja) * | 2001-06-26 | 2003-01-10 | Toshiba Corp | 半導体チップ及び半導体モジュール |
JP2005203584A (ja) * | 2004-01-16 | 2005-07-28 | Renesas Technology Corp | 半導体装置 |
JP2007053157A (ja) * | 2005-08-16 | 2007-03-01 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2007067409A (ja) * | 2005-09-01 | 2007-03-15 | Atmel Germany Gmbh | 制御可能な周波数を生成するための半導体チップ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011187650A (ja) * | 2010-03-08 | 2011-09-22 | Renesas Electronics Corp | 半導体装置 |
JP2011055006A (ja) * | 2010-12-13 | 2011-03-17 | Renesas Electronics Corp | 半導体装置の製造方法 |
WO2015097962A1 (ja) * | 2013-12-25 | 2015-07-02 | パナソニック株式会社 | 半導体装置 |
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