JP2008034687A - Photoelectric conversion element - Google Patents

Photoelectric conversion element Download PDF

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JP2008034687A
JP2008034687A JP2006207770A JP2006207770A JP2008034687A JP 2008034687 A JP2008034687 A JP 2008034687A JP 2006207770 A JP2006207770 A JP 2006207770A JP 2006207770 A JP2006207770 A JP 2006207770A JP 2008034687 A JP2008034687 A JP 2008034687A
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photoelectric conversion
conversion element
transparent electrode
moth
convex portions
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Jo Shibata
城 柴田
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Toppan Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectiric conversion element using a flexible film which is so excellent in dispersion of light (a light confining effect within the photoelectiric conversion element) to be efficient in photoelectiric conversion as a base material, by making an uneven surface (texture structure) minute, dense and homogeneous. <P>SOLUTION: The photoelectiric conversion element has at least a flexible transparent base material, a transparent electrode, and a semiconductor layer laminated in this order from a light incident side. A moth eye structure is formed on the side of the transparent electrode of the flexible transparent base material. A silicone resin is used as a material of the flexible transparent base material. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は光電変換素子の基材フィルムに関し、更に詳しくは、太陽光を有効利用し光電変換効率を向上させる構造を有する基材フィルムに関する。 The present invention relates to a base film of a photoelectric conversion element, and more particularly to a base film having a structure that effectively uses sunlight to improve photoelectric conversion efficiency.

現在、多くの光電変換素子はガラス上に作製されている。
しかしながらガラス上に作製すると重く設置場所が限られてしまう。
フィルム上で作製できれば軽量化が可能で、さらに曲面上にも設置が可能になり光電変換素子の設置可能範囲が拡大し光電変換素子の普及に貢献できる。
また、フィルムはロールトゥロールの生産工程が可能で量産できコストを抑えられるという利点がある。 Currently, many photoelectric conversion elements are produced on glass.
However, if it is made on glass, the installation place is heavy and limited.
If it can be manufactured on a film, it can be reduced in weight, and can also be installed on a curved surface, so that the installation range of the photoelectric conversion element can be expanded and the photoelectric conversion element can be widely used.
In addition, the film has an advantage that the production process of roll-to-roll is possible, mass production can be performed, and cost can be reduced.

光電変換素子の性能向上のためには光反射による光損失、電荷の再結合による光損失、エネルギーの不完全利用による光損失、抵抗による電気損失などの損失を少なくする必要がある。 In order to improve the performance of the photoelectric conversion element, it is necessary to reduce losses such as light loss due to light reflection, light loss due to charge recombination, light loss due to incomplete use of energy, and electrical loss due to resistance.

光電変換素子の光電変換層表面は屈折率が大きいので光反射による光損失が大きくなることが懸念されるため、光電変換層表面に光反射防止構造としてテクスチャーを形成することが行われている。 Since the surface of the photoelectric conversion layer of the photoelectric conversion element has a high refractive index, there is a concern that light loss due to light reflection increases, and therefore, a texture is formed on the surface of the photoelectric conversion layer as a light reflection preventing structure.

反射防止構造を形成する方法として、シリコンウエハーから太陽電池セルを作製するタイプでは、シリコンウエハーを水酸化カリウムなどのアルカリ溶液に浸漬し結晶方位によるエッチング速度異方性を利用しテクスチャーを形成する方法が開示されている。（特許文献１） As a method of forming an antireflection structure, in a type in which a solar cell is manufactured from a silicon wafer, a method of forming a texture by immersing the silicon wafer in an alkaline solution such as potassium hydroxide and utilizing etching rate anisotropy due to crystal orientation Is disclosed. (Patent Document 1)

反射防止構造を形成する方法として、基板上に透明導電膜を形成して行くタイプでは、透明導電膜に酢酸や塩酸などの酸性または水酸化ナトリウムなどのアルカリ性溶液でエッチングすることによりテクスチャーを形成する方法が開示されている。（特許文献２） As a method of forming an antireflection structure, in a type in which a transparent conductive film is formed on a substrate, a texture is formed by etching the transparent conductive film with an acidic solution such as acetic acid or hydrochloric acid or an alkaline solution such as sodium hydroxide. A method is disclosed. (Patent Document 2)

反射防止構造を形成する方法として、基板上に透明導電膜を形成して行くタイプでは、スパッタやＣＶＤでの透明導電膜作製時にホウ素を導入することでテクスチャーを形成する方法が開示されている。（特許文献３） As a method for forming an antireflection structure, a method in which a transparent conductive film is formed on a substrate is disclosed in which a texture is formed by introducing boron at the time of forming a transparent conductive film by sputtering or CVD. (Patent Document 3)

特開２００４−２８１７５８号公報JP 2004-281758 A 特開２００５−７２３３２号公報JP 2005-72332 A 特開２０００−２５２５０４号公報JP 2000-252504 A

しかしながら、従来の透明電極及び裏面電極表面上の凹凸形状（テクスチャー構造）は、規則性がなく、形状がランダムに形成されていた。
そのため、電極表面上のテクスチャー構造の密度にばらつきを生じており、光の散乱（光電変換素子内における光の閉じ込め効果）が十分ではなく、光電変換効率が不十分だった。 However, the concavo-convex shape (texture structure) on the surface of the conventional transparent electrode and the back electrode has no regularity, and the shape is randomly formed.
For this reason, the density of the texture structure on the electrode surface varies, light scattering (light confinement effect in the photoelectric conversion element) is not sufficient, and photoelectric conversion efficiency is insufficient.

本発明の課題は、凹凸形状（テクスチャー構造）を高密度かつ緻密かつ均質にすることにより、光の散乱（光電変換素子内における光の閉じ込め効果）に優れた光電変換効率が高い、
可撓性を有するフィルムを基材として用いた光電変換素子を提供することを目的とする。 The problem of the present invention is that the uneven shape (texture structure) is made dense, dense and homogeneous, so that the photoelectric conversion efficiency excellent in light scattering (light confinement effect in the photoelectric conversion element) is high.
It aims at providing the photoelectric conversion element which used the film which has flexibility as a base material.

請求項１に記載の発明は、少なくとも、フレキシブル透明基材、透明電極、半導体層が光入射側からこの順に積層されてなる光電変換素子において、
前記フレキシブル透明基材の透明電極側にモスアイ構造が形成されていることを特徴とする光電変換素子である。 The invention according to claim 1 is a photoelectric conversion element in which at least a flexible transparent substrate, a transparent electrode, and a semiconductor layer are laminated in this order from the light incident side.
A moth-eye structure is formed on the transparent electrode side of the flexible transparent substrate.

このような構成にすることで、透明電極表面に高密度かつ緻密かつ均質な凹凸形状（テクスチャー構造）を形成することができ、入射光を多方向へ散乱させることが可能となり、光電変換効率を向上することができる。 By adopting such a configuration, it is possible to form a high-density, dense and homogeneous uneven shape (texture structure) on the transparent electrode surface, and to scatter incident light in multiple directions, and to improve the photoelectric conversion efficiency. Can be improved.

請求項２に記載の発明は、前記フレキシブル透明基材がシリコン樹脂であることを特徴とする請求項１記載の光電変換素子である。 The invention according to claim 2 is the photoelectric conversion element according to claim 1, wherein the flexible transparent base material is a silicon resin.

前記フレキシブル透明基材として耐熱性を有するシリコン樹脂を用いることにより、高温プロセス（光電変換層の作製プロセス）に耐久することができる。 By using a heat-resistant silicon resin as the flexible transparent substrate, it can be durable to a high-temperature process (photoelectric conversion layer manufacturing process).

請求項３に記載の発明は、前記フレキシブル透明基材と前記透明電極の間にガスバリア層を形成したことを特徴とする請求項１または請求項２に記載の光電変換素子である。 The invention according to claim 3 is the photoelectric conversion element according to claim 1 or 2, wherein a gas barrier layer is formed between the flexible transparent substrate and the transparent electrode.

このようにすることで、透明電極を水蒸気から保護することができる。 By doing in this way, a transparent electrode can be protected from water vapor | steam.

請求項４に記載の発明は、前記モスアイ構造を有する表面が、凸部が２００〜２０００Åの平均直径（ピッチ）を有した概略円柱状であり、アスペクト比（凸部の高さ／凸部の幅）は０．４〜０．５の関係を満たしていることを特徴とする請求項１乃至請求項３のいずれか１項に記載の光電変換素子。 According to a fourth aspect of the present invention, the surface having the moth-eye structure has a substantially cylindrical shape with convex portions having an average diameter (pitch) of 200 to 2000 mm, and an aspect ratio (height of convex portions / convex portions). 4. The photoelectric conversion element according to claim 1, wherein the width satisfies a relationship of 0.4 to 0.5. 5.

このようにすることで、効率良く入射光を多方向へ散乱させることが可能となり、光電変換素子の出力を向上することができる。 By doing in this way, incident light can be efficiently scattered in multiple directions, and the output of the photoelectric conversion element can be improved.

請求項５に記載の発明は、少なくとも、フレキシブル透明基材、透明電極、半導体層が光入射側からこの順に積層されてなる光電変換素子において、
前記フレキシブル透明基材上に透明樹脂でモスアイ構造を形成したことを特徴とする光電変換素子である。 The invention according to claim 5 is at least a photoelectric conversion element in which a flexible transparent substrate, a transparent electrode, and a semiconductor layer are laminated in this order from the light incident side.
The photoelectric conversion element is characterized in that a moth-eye structure is formed of a transparent resin on the flexible transparent substrate.

このような構成にすることで、透明電極表面に高密度かつ緻密かつ均質な凹凸形状（テクスチャー構造）を形成することができ、入射光を多方向へ散乱させることが可能となり、光電変換効率を向上することができる。 By adopting such a configuration, it is possible to form a high-density, dense and homogeneous uneven shape (texture structure) on the transparent electrode surface, and to scatter incident light in multiple directions, and to improve the photoelectric conversion efficiency. Can be improved.

請求項６に記載の発明は、前記透明樹脂がシリコン樹脂であることを特徴とする請求項５に記載の光電変換素子である。 The invention according to claim 6 is the photoelectric conversion element according to claim 5, wherein the transparent resin is a silicon resin.

前記透明樹脂として耐熱性を有するシリコン樹脂を用いることにより、高温プロセス（光電変換層の作製プロセス）に耐久することができる。 By using a heat-resistant silicon resin as the transparent resin, it is possible to endure a high-temperature process (a process for producing a photoelectric conversion layer).

請求項７に記載の発明は、前記透明樹脂と前記透明電極の間にガスバリア層を形成したことを特徴とする請求項５または請求項６に記載の光電変換素子である。 The invention according to claim 7 is the photoelectric conversion element according to claim 5 or 6, wherein a gas barrier layer is formed between the transparent resin and the transparent electrode.

このようにすることで、透明電極を水蒸気から保護することができる。 By doing in this way, a transparent electrode can be protected from water vapor | steam.

請求項８に記載の発明は、前記モスアイ構造を有する表面が、凸部が２００〜２０００Åの平均直径（ピッチ）を有した概略円柱状であり、アスペクト比（凸部の高さ／凸部の幅）は０．４〜０．５の関係を満たしていることを特徴とする請求項５乃至請求項７のいずれか１項に記載の光電変換素子である。 According to an eighth aspect of the present invention, the surface having the moth-eye structure has a substantially cylindrical shape with convex portions having an average diameter (pitch) of 200 to 2000 mm, and an aspect ratio (height of convex portions / convex portions). 8. The photoelectric conversion element according to claim 5, wherein the width satisfies a relationship of 0.4 to 0.5.

このようにすることで、効率良く入射光を多方向へ散乱させることが可能となり、光電変換素子の出力を向上することができる。 By doing in this way, incident light can be efficiently scattered in multiple directions, and the output of the photoelectric conversion element can be improved.

本発明によれば、光の散乱（光電変換素子内における光の閉じ込め効果）に優れた光電変換効率が高い、可撓性を有するフィルムを基材として用いた光電変換素子を得ることができる。 ADVANTAGE OF THE INVENTION According to this invention, the photoelectric conversion element using the film which has the photoelectric conversion efficiency excellent in the scattering of light (the light confinement effect in a photoelectric conversion element) and high as a base material can be obtained.

図１にモスアイ反射防止パターンを形成した光電変換素子構造を示す。
図１は一例であり、基材１の光入射側にも反射防止パターンを形成してもよい。
また、入射光を散乱させるため透明基材内に散乱体を導入しても良い。 FIG. 1 shows a photoelectric conversion element structure in which a moth-eye antireflection pattern is formed.
FIG. 1 is an example, and an antireflection pattern may also be formed on the light incident side of the substrate 1.
Further, a scatterer may be introduced into the transparent substrate in order to scatter incident light.

フレキシブル透明基材１の材料としては、紫外領域から赤外領域まで幅広く透明性があり、可撓性を有し、透明導電膜及び光電変換層の形成時の熱に対する耐熱性（およそ２５０℃）を有し、屋外で使用するための耐候性有するシリコン樹脂を用いることができる。 The material of the flexible transparent substrate 1 is widely transparent from the ultraviolet region to the infrared region, has flexibility, and heat resistance to heat when forming the transparent conductive film and the photoelectric conversion layer (approximately 250 ° C.) And a weather-resistant silicon resin for outdoor use can be used.

シリコン樹脂は、例えば、光電変換層３がアモルファスシリコンの場合、アモルファスシリコンの吸収波長である３００〜７５０ｎｍの波長対して少なくとも９０％以上の透過率を有している。 For example, when the photoelectric conversion layer 3 is amorphous silicon, the silicon resin has a transmittance of at least 90% with respect to a wavelength of 300 to 750 nm which is an absorption wavelength of amorphous silicon.

モスアイ構造の凸部のピッチは光電変換層３の吸収波長の３００ｎｍよりも少なくとも小さい必要があり、更に、入射光の入射角が変化するためそれより更に小さいことが必要である。 The pitch of the convex portions of the moth-eye structure needs to be at least smaller than the absorption wavelength of 300 nm of the photoelectric conversion layer 3, and further needs to be smaller than that because the incident angle of incident light changes.

膜質の良い透明電極形成や光電変換層形成のため、モスアイ構造のアスペクト比は小さい方が適しているがモスアイ構造を付加する効果を得るためにはある程度のアスペクト比が必要である。
モスアイ構造のアスペクト比（凸部の高さ／凸部の幅）は０．４〜０．５が好ましい。 In order to form a transparent electrode or a photoelectric conversion layer with good film quality, it is suitable that the aspect ratio of the moth-eye structure is small, but a certain aspect ratio is required to obtain the effect of adding the moth-eye structure.
The aspect ratio of the moth-eye structure (the height of the convex portion / the width of the convex portion) is preferably 0.4 to 0.5.

モスアイ構造形成方法としては、基板上にレジストを塗布し電子線やＵＶにより凹凸パターンを形成し、該凹凸パターン上に電鋳によりＮｉを積層し、原版を作製し、該原版の凹凸形成面上に、ＵＶ硬化性の樹脂を流し込みＵＶを照射し剥がすことでモスアイ構造を形成する方法を用いることができる。 As a moth-eye structure forming method, a resist is applied on a substrate, a concavo-convex pattern is formed by an electron beam or UV, Ni is laminated on the concavo-convex pattern by electroforming, a master is prepared, and a concavo-convex formation surface of the master is formed. In addition, a method of forming a moth-eye structure by pouring a UV curable resin, irradiating with UV, and peeling it off can be used.

透明電極２の材料としてはＺｎＯ、ＳｎＯ２およびＩＴＯを用いる事ができる。
光電変換層としてアモルファスシリコンを、水素プラズマ法を用いて成膜する場合、透明電極２の材料としては耐水素プラズマ性を有するＺｎＯやＳｎＯ２を用いる事が望ましい。 As a material of the transparent electrode 2, ZnO, SnO 2 and ITO can be used.
In the case where amorphous silicon is formed as the photoelectric conversion layer using the hydrogen plasma method, it is desirable to use ZnO or SnO 2 having hydrogen plasma resistance as the material of the transparent electrode 2.

光電変換層３の材料としては、シリコン系材料（アモルファス、微結晶、多結晶）やＣＩＧＳ系材料、２−６族系材料を用いることができ、フレキシブル透明基材１の耐熱性を考えるとシリコン系が好ましい。 As the material of the photoelectric conversion layer 3, silicon materials (amorphous, microcrystal, polycrystal), CIGS materials, and 2-6 group materials can be used. Considering the heat resistance of the flexible transparent substrate 1, silicon is used. A system is preferred.

光電変換層３の構造としては、ｐｉｎ構造が好ましく、アモルファスと微結晶等のタンデム構造でもよい。 The structure of the photoelectric conversion layer 3 is preferably a pin structure, and may be a tandem structure such as amorphous or microcrystalline.

裏面電極４の材料としては、Ａｇ、Ａｌなどの金属やＺｎＯを用いることができる。 As a material for the back electrode 4, a metal such as Ag or Al or ZnO can be used.

裏面電極４の構造としては、ＺｎＯをテクスチャー化して形成し、その上に金属を積層することにより、光散乱（光閉じ込め）効果を加えてもよい。 As the structure of the back electrode 4, a light scattering (light confinement) effect may be added by forming textured ZnO and laminating a metal thereon.

まず、電子線描画により形成したレジスト版（凹凸ピッチ２００ｎｍ、高さ１００ｎｍ）を作製し、その後、レジスト上に電鋳法を用いてＮｉを積層したＮｉ原版を作製し、その原版にＵＶ硬化性シリコン樹脂を流し込み、該ＵＶ硬化性シリコン樹脂にＵＶを照射し硬化させることにより、凸部が１０００Åの平均直径（ピッチ）を有した概略円柱状であり、アスペクト比（凸部の高さ／凸部の幅）が０．４５であるモスアイ構造を持つ１５０μｍ厚のシリコン樹脂シートを形成した。 First, a resist plate (uneven pitch 200 nm, height 100 nm) formed by electron beam drawing is prepared, and then a Ni original plate in which Ni is laminated on the resist using an electroforming method is prepared. By pouring a silicone resin and irradiating and curing the UV curable silicone resin with UV, the projections are roughly cylindrical with an average diameter (pitch) of 1000 mm, and the aspect ratio (height of projections / convex A 150 μm-thick silicon resin sheet having a moth-eye structure with a width of 0.45 was formed.

次に、モスアイ構造上にガスバリア層（酸化珪素層（膜厚３０ｎｍ））を、ＲＦマグネトロンスパッタ法を用いて形成した。 Next, a gas barrier layer (silicon oxide layer (film thickness: 30 nm)) was formed on the moth-eye structure by using an RF magnetron sputtering method.

スパッタ条件を以下に示す。
ターゲット；Ｓｉ
スパッタガス：Ｏ２；Ａｒ＝１：９
スパッタガス流量；５０ｓｃｃｍ
圧力；０．５Ｐａ
投入電力；３００Ｗ／ｃｍ２
基板温度；１００℃ The sputtering conditions are shown below.
Target; Si
Sputtering gas: O 2 ; Ar = 1: 9
Sputtering gas flow rate: 50 sccm
Pressure; 0.5Pa
Input power: 300 W / cm 2
Substrate temperature: 100 ° C

次に、ガスバリア層上に透明電極としてＺｎＯ層（膜厚２００ｎｍ）を、ＲＦマグネトロンスパッタ法を用いて形成した。 Next, a ZnO layer (thickness: 200 nm) was formed as a transparent electrode on the gas barrier layer using an RF magnetron sputtering method.

スパッタ条件を以下に示す。
ターゲット；ＺｎＯ・Ｇａ２Ｏ３（Ｇａ２Ｏ３ ５．６ｗｔ％）
スパッタガス：アルゴン
ガス圧力；０．３Ｐａ
投入電力；３００Ｗ／ｃｍ２
基板温度；１００℃ The sputtering conditions are shown below.
Target: ZnO.Ga2O3 (Ga2O3 5.6 wt%)
Sputtering gas: Argon gas pressure; 0.3 Pa
Input power: 300 W / cm 2
Substrate temperature: 100 ° C

次に、透明電極上に、光電変換層（ａ−Ｓｉ）を、ＰＥＣＶＤ法を用いて形成した。 Next, a photoelectric conversion layer (a-Si) was formed on the transparent electrode using a PECVD method.

ＰＥＣＶＤ条件を以下に示す。
（ｐ層（２０ｎｍ））
原料ガスおよび原料ガス流量；ＳｉＨ４：７ｓｃｃｍ、Ｈ２：５０ｓｃｃｍ、Ｂ２Ｈ６：５０ｓｃｃｍ
圧力；５０Ｐａ
電力；８Ｗ
基板温度；２００℃
（ｉ層（５００ｎｍ））
原料ガスおよび原料ガス流量；ＳｉＨ４：５ｓｃｃｍ、Ｈ２：５０ｓｃｃｍ
圧力；５０Ｐａ
電力；２０Ｗ
基板温度；１８０℃
（ｎ層（４０ｎｍ））
原料ガスおよび原料ガス流量；ＳｉＨ４：３ｓｃｃｍ、Ｈ２：４８ｓｃｃｍ、ＰＨ３：２ｓｃｃｍ
圧力；５０Ｐａ
電力；５Ｗ
基板温度；２００℃ The PECVD conditions are shown below.
(P layer (20 nm))
Source gas and source gas flow rate; SiH 4 : 7 sccm, H 2 : 50 sccm, B 2 H 6 : 50 sccm
Pressure: 50Pa
Power: 8W
Substrate temperature: 200 ° C
(I layer (500 nm))
Source gas and source gas flow rate; SiH 4 : 5 sccm, H 2 : 50 sccm
Pressure: 50Pa
Power: 20W
Substrate temperature: 180 ° C
(N layer (40 nm))
Source gas and source gas flow rate; SiH 4 : 3 sccm, H 2 : 48 sccm, PH 3 : 2 sccm
Pressure: 50Pa
Electric power: 5W
Substrate temperature: 200 ° C

最後に、光電変換層上に裏面電極（Ａｇ）を、ＥＢ蒸着法を用いて形成することにより光電変換素子を得た。 Finally, a back surface electrode (Ag) was formed on the photoelectric conversion layer by using an EB vapor deposition method to obtain a photoelectric conversion element.

ＥＢ蒸着条件を以下に示す。
ガス圧力；５０Ｐａ
投入電力；３００Ｗ／ｃｍ２
基板温度；１００℃ The EB deposition conditions are shown below.
Gas pressure; 50Pa
Input power: 300 W / cm 2
Substrate temperature: 100 ° C

次に、ソーラーシュミレーターを用い、太陽電池規格ＡＭ１．５（１００ｍＷ／ｃｍ２）照射条件下における電流−電圧特性を評価した。 Next, the current-voltage characteristics under solar cell standard AM1.5 (100 mW / cm 2 ) irradiation conditions were evaluated using a solar simulator.

開放電圧は０．５Ｖ、短絡電流は２４ｍＡ／ｃｍ２、形状因子は０．７５、変換効率は９．０％であった。 The open circuit voltage was 0.5 V, the short circuit current was 24 mA / cm 2 , the form factor was 0.75, and the conversion efficiency was 9.0%.

＜比較例１＞
微細凹凸パターンを設けなかったこと以外は実施例と同様にして光電変換素子を作製し、実施例と同様に電池特性を測定した。 <Comparative Example 1>
A photoelectric conversion element was produced in the same manner as in the example except that the fine uneven pattern was not provided, and the battery characteristics were measured in the same manner as in the example.

開放電圧は０．５２Ｖ、短絡電流は１８ｍＡ／ｃｍ２、形状因子は０．７５、変換効率は７．２％であった。 The open circuit voltage was 0.52 V, the short circuit current was 18 mA / cm 2 , the form factor was 0.75, and the conversion efficiency was 7.2%.

比較例の光電変換素子よりも実施例の光電変換素子の方が、光電電流が大きく、変換効率が高い事が確認された。 It was confirmed that the photoelectric conversion element of the example had a larger photoelectric current and higher conversion efficiency than the photoelectric conversion element of the comparative example.

本発明の、太陽電池およびその製造方法は、電気自動車、携帯電話、自動販売機、宇宙船用電源等に用いる太陽電池に利用できる。 The solar cell and the manufacturing method thereof according to the present invention can be used for a solar cell used for an electric vehicle, a mobile phone, a vending machine, a power supply for a spacecraft, and the like.

本発明の太陽電池の断面の一部を示す説明図である。It is explanatory drawing which shows a part of cross section of the solar cell of this invention. 本発明の太陽電池の断面の一部を示す説明図である。It is explanatory drawing which shows a part of cross section of the solar cell of this invention.

符号の説明Explanation of symbols

１ フレキシブル透明基材
２ 透明電極
３ 光電変換層
４ 裏面電極
５ 透明樹脂 DESCRIPTION OF SYMBOLS 1 Flexible transparent base material 2 Transparent electrode 3 Photoelectric conversion layer 4 Back surface electrode 5 Transparent resin

Claims (8)

少なくとも、フレキシブル透明基材、透明電極、半導体層が光入射側からこの順に積層されてなる光電変換素子において、
前記フレキシブル透明基材の透明電極側にモスアイ構造が形成されていることを特徴とする光電変換素子。 At least in a photoelectric conversion element in which a flexible transparent substrate, a transparent electrode, and a semiconductor layer are laminated in this order from the light incident side,
A photoelectric conversion element characterized in that a moth-eye structure is formed on the transparent electrode side of the flexible transparent substrate. 前記フレキシブル透明基材がシリコン樹脂であることを特徴とする請求項１記載の光電変換素子。 The photoelectric conversion element according to claim 1, wherein the flexible transparent substrate is a silicon resin. 前記フレキシブル透明基材と前記透明電極の間にガスバリア層を形成したことを特徴とする請求項１または請求項２に記載の光電変換素子。 The photoelectric conversion element according to claim 1, wherein a gas barrier layer is formed between the flexible transparent substrate and the transparent electrode. 前記モスアイ構造を有する表面が、凸部が２００〜２０００Åの平均直径（ピッチ）を有した概略円柱状であり、アスペクト比（凸部の高さ／凸部の幅）は０．４〜０．５の関係を満たしていることを特徴とする請求項１乃至請求項３のいずれか１項に記載の光電変換素子。 The surface having the moth-eye structure has a substantially cylindrical shape with convex portions having an average diameter (pitch) of 200 to 2000 mm, and the aspect ratio (height of convex portions / width of convex portions) is 0.4 to 0.00. 5. The photoelectric conversion element according to claim 1, wherein the relationship 5 is satisfied. 少なくとも、フレキシブル透明基材、透明電極、半導体層が光入射側からこの順に積層されてなる光電変換素子において、
前記フレキシブル透明基材上に透明樹脂でモスアイ構造を形成したことを特徴とする光電変換素子。 At least in a photoelectric conversion element in which a flexible transparent substrate, a transparent electrode, and a semiconductor layer are laminated in this order from the light incident side,
A photoelectric conversion element, wherein a moth-eye structure is formed of a transparent resin on the flexible transparent substrate. 前記透明樹脂がシリコン樹脂であることを特徴とする請求項５に記載の光電変換素子。 The photoelectric conversion element according to claim 5, wherein the transparent resin is a silicon resin. 前記透明樹脂と前記透明電極の間にガスバリア層を形成したことを特徴とする請求項５または請求項６に記載の光電変換素子。 The photoelectric conversion element according to claim 5, wherein a gas barrier layer is formed between the transparent resin and the transparent electrode. 前記モスアイ構造を有する表面が、凸部が２００〜２０００Åの平均直径（ピッチ）を有した概略円柱状であり、アスペクト比（凸部の高さ／凸部の幅）は０．４〜０．５の関係を満たしていることを特徴とする請求項５乃至請求項７のいずれか１項に記載の光電変換素子。 The surface having the moth-eye structure has a substantially cylindrical shape with convex portions having an average diameter (pitch) of 200 to 2000 mm, and the aspect ratio (height of convex portions / width of convex portions) is 0.4 to 0.00. The photoelectric conversion element according to claim 5, wherein the relationship 5 is satisfied.
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