JP2007533140A - 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 - Google Patents
少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 17
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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Abstract
Description
Claims (22)
- 印加された電圧に反応して光を発するよう設定されたアクティブ領域と、
少なくとも部分的に前記アクティブ領域をカプセル化する第1のカプセル化層であって、
前記第1のカプセル化層の少なくとも一つの物理的性質を変化させる基材とナノ粒子群とを含む第1のカプセル化層と、
少なくとも部分的に前記第1のカプセル化層をカプセル化する第2のカプセル化層とを備えたことを特徴とする発光素子。 - 前記基材は、シリコーン、シリコーン化合物、オプティカルゲル、エポキシ樹脂、ガラス、ゾルゲル、エーロゲル、および/又は光学的に安定な高分子化合物を含むことを特徴とする請求項1に記載の発光素子。
- 前記第1のカプセル化層は、十分に透明であることを特徴とする請求項1に記載の発光素子。
- 前記ナノ粒子群は、TiO2、ダイヤモンド、炭化ケイ素、散乱粒子群、充填材群、リン光体群、および/又は光変換物質群を含むことを特徴とする請求項1に記載の発光素子。
- 前記少なくとも一つの物理的特性は、屈折率、熱伝導率、機械的強度、耐磨耗性、および/又は光学的安定性を含むことを特徴とする請求項1に記載の発光素子。
- 前記基材は、第1の基材であり、前記ナノ粒子群は、第1のナノ粒子群であり、前記第2のカプセル化層は、前記第2のカプセル化層の少なくとも一つの物理的性質を変化させる第2の基材と第2のナノ粒子群とを含むことを特徴とする請求項1に記載の発光素子。
- 前記第2の基材は、シリコーン、シリコーン化合物、オプティカルゲル、エポキシ樹脂、ガラス、ゾルゲル、エーロゲル、および/又は光学的に安定な高分子化合物を含むことを特徴とする請求項6に記載の発光素子。
- 前記第2のカプセル化層は、十分に透明であることを特徴とする請求項6に記載の発光素子。
- 前記第2のナノ粒子群は、TiO2、ダイヤモンド、炭化ケイ素、散乱粒子群、充填材群、リン光体群、および/又は光変換物質群を含むことを特徴とする請求項6に記載の発光素子。
- 前記第2のカプセル化層の前記少なくとも一つの物理的特性は、屈折率、熱伝導率、機械的強度、耐磨耗性、および/又は光学的安定性を含むことを特徴とする請求項6に記載の発光素子。
- 前記アクティブ領域に対向した、前記第1のカプセル化層の外側表面は、前記アクティブ領域からの光線群が、前記第1のカプセル化層に、臨界角より大きな角度で入射しないように形成されることを特徴とする請求項1に記載の発光素子。
- 発光素子を形成する方法であって、
印加された電圧に反応して光を発するよう設定されたアクティブ領域を形成するステップと、
少なくとも部分的に前記アクティブ領域をカプセル化する第1のカプセル化層であって、
前記第1のカプセル化層の少なくとも一つの物理的性質を変化させる基材とナノ粒子群とを含む第1のカプセル化層を形成するステップと、
少なくとも部分的に前記第1のカプセル化層をカプセル化する第2のカプセル化層を形成するステップとを備えたことを特徴とする方法。 - 前記基材は、シリコーン、シリコーン化合物、オプティカルゲル、エポキシ樹脂、ガラス、ゾルゲル、エーロゲル、および/又は光学的に安定な高分子化合物を含むことを特徴とする請求項12に記載の方法。
- 前記第1のカプセル化層は、十分に透明であることを特徴とする請求項12に記載の方法。
- 前記ナノ粒子群は、TiO2、ダイヤモンド、炭化ケイ素、散乱粒子群、充填材群、リン光体群、および/又は光変換物質群を含むことを特徴とする請求項12に記載の方法。
- 前記少なくとも一つの物理的特性は、屈折率、熱伝導率、機械的強度、耐磨耗性、および/又は光学的安定性を含むことを特徴とする請求項12に記載の方法。
- 前記基材は、第1の基材であり、前記ナノ粒子群は、第1のナノ粒子群であり、前記第2のカプセル化層は、前記第2のカプセル化層の少なくとも一つの物理的性質を変化させる第2の基材と第2のナノ粒子群とを含むことを特徴とする請求項12に記載の方法。
- 前記第2の基材は、シリコーン、シリコーン化合物、オプティカルゲル、エポキシ樹脂、ガラス、ゾルゲル、エーロゲル、および/又は光学的に安定な高分子化合物を含むことを特徴とする請求項17に記載の方法。
- 前記第2のカプセル化層は、十分に透明であることを特徴とする請求項17に記載の方法。
- 前記第2のナノ粒子群は、TiO2、ダイヤモンド、炭化ケイ素、散乱粒子群、充填材群、リン光体群、および/又は光変換物質群を含むことを特徴とする請求項17に記載の方法。
- 前記第2のカプセル化層の前記少なくとも一つの物理的特性は、屈折率、熱伝導率、機械的強度、耐磨耗性、および/又は光学的安定性を含むことを特徴とする請求項17に記載の方法。
- 前記アクティブ領域に対向した、前記第1のカプセル化層の外側表面は、前記アクティブ領域からの光線群が、前記第1のカプセル化層に、臨界角より大きな角度で入射しないように形成されることを特徴とする請求項12に記載の方法。
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US10/818,912 | 2004-04-06 | ||
US10/818,912 US7868343B2 (en) | 2004-04-06 | 2004-04-06 | Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same |
PCT/US2005/011592 WO2005101909A1 (en) | 2004-04-06 | 2005-04-05 | Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same |
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JP2011265534A Division JP2012089864A (ja) | 2004-04-06 | 2011-12-05 | 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 |
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JP2011265534A Pending JP2012089864A (ja) | 2004-04-06 | 2011-12-05 | 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 |
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EP (1) | EP1741315B1 (ja) |
JP (2) | JP5376801B2 (ja) |
KR (2) | KR101225252B1 (ja) |
AT (1) | ATE415072T1 (ja) |
DE (1) | DE602005011119D1 (ja) |
TW (1) | TWI364115B (ja) |
WO (1) | WO2005101909A1 (ja) |
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US7868343B2 (en) | 2011-01-11 |
TWI364115B (en) | 2012-05-11 |
JP5376801B2 (ja) | 2013-12-25 |
US20050224829A1 (en) | 2005-10-13 |
US8946755B2 (en) | 2015-02-03 |
US20110068362A1 (en) | 2011-03-24 |
TW200537714A (en) | 2005-11-16 |
EP1741315B1 (en) | 2008-11-19 |
JP2012089864A (ja) | 2012-05-10 |
KR20070004023A (ko) | 2007-01-05 |
ATE415072T1 (de) | 2008-12-15 |
KR101138540B1 (ko) | 2012-04-25 |
WO2005101909A1 (en) | 2005-10-27 |
DE602005011119D1 (de) | 2009-01-02 |
KR101225252B1 (ko) | 2013-01-22 |
EP1741315A1 (en) | 2007-01-10 |
KR20110112450A (ko) | 2011-10-12 |
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