JP2007305724A - Device and method for deciding transfer state of paste - Google Patents

Device and method for deciding transfer state of paste Download PDF

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JP2007305724A
JP2007305724A JP2006131362A JP2006131362A JP2007305724A JP 2007305724 A JP2007305724 A JP 2007305724A JP 2006131362 A JP2006131362 A JP 2006131362A JP 2006131362 A JP2006131362 A JP 2006131362A JP 2007305724 A JP2007305724 A JP 2007305724A
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paste
transferred
flux
transfer state
bump
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Hideaki Kato
秀明 加藤
Hiroshi Murata
浩 村田
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and a method for deciding the nondefective or defective of the transfer state of a flux in an electrode for an electronic part. <P>SOLUTION: A brightness distribution is detected in a bump 11a with a transferred flux with a blended pigment changing the brightness of the bump 11a. The nondefective or defective of the transfer state of the flux is decided on the basis of a ratio of a region 11c displaying the brightness exceeding a threshold value TH to the region 11d displaying the brightness exceeding no threshold value TH. Accordingly, the nondefective or defective of the transfer state of the flux can be decided, and the trouble can be prevented in the joining of the electrode resulting from the defective transfer of the flux. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、電極に転写されたフラックス等のペーストの転写状態の良否を判定するペーストの転写状態判定装置およびペーストの転写状態判定方法に関するものである。   The present invention relates to a paste transfer state determination device and a paste transfer state determination method for determining whether a transfer state of a paste such as flux transferred to an electrode is good or bad.

従来、フリップチップ等の接合体と基板等の被接合体との接合性の向上を目的として、フリップチップの電極と基板との接合部にフラックスを介在させている。フラックスは、接合前のフリップチップの電極に予め転写することにより供給され、フラックスが転写された電極を基板に押圧することによりフリップチップと基板の接合が行われる。（特許文献１参照）。
特許第３２８９６０４号公報 Conventionally, for the purpose of improving the bondability between a bonded body such as a flip chip and a bonded body such as a substrate, a flux is interposed in the bonded portion between the electrode of the flip chip and the substrate. The flux is supplied by being transferred in advance to the electrode of the flip chip before bonding, and the flip chip and the substrate are bonded by pressing the electrode onto which the flux has been transferred to the substrate. (See Patent Document 1).
Japanese Patent No. 3289604

ところで、フラックスが電極の表面に完全に転写されていなかったり、転写量（厚み）に不足があったりする等の転写不良が発生すると、フリップチップと基板との物理的、電気的な接合強度が不足する等の不具合が生じることがある。   By the way, when a transfer failure such as the flux not being completely transferred to the surface of the electrode or the transfer amount (thickness) being insufficient, the physical and electrical bonding strength between the flip chip and the substrate is reduced. Problems such as shortage may occur.

そこで本発明は、接合体の電極におけるフラックス等のペーストの転写状態の良否を判定するペーストの転写状態判定装置およびペーストの転写状態判定方法を提供することを目的とする。   Accordingly, an object of the present invention is to provide a paste transfer state determination device and a paste transfer state determination method for determining whether or not a transfer state of a paste such as a flux in an electrode of a bonded body is good.

請求項１記載のペーストの転写状態判定装置は、電極の輝度を変化させる顔料が配合されたペーストが転写された前記電極における輝度分布を検出する輝度分布検出手段と、前記輝度分布に基づいて前記ペーストが転写された領域と転写されていない領域との比率を演算する演算手段と、前記ペーストが転写された領域と転写されていない領域との比率に基づいて前記ペーストの転写状態の良否を判定する判定手段と、を備えた。   The apparatus for determining a transfer state of a paste according to claim 1, wherein a luminance distribution detecting means for detecting a luminance distribution in the electrode to which a paste containing a pigment that changes the luminance of the electrode is transferred, and the luminance distribution based on the luminance distribution. Based on the ratio between the area where the paste is transferred and the area where the paste is not transferred and the ratio between the area where the paste is transferred and the area where the paste is not transferred And a determination means.

請求項２記載のペーストの転写状態判定装置は、請求項１記載のペーストの転写状態判定装置において、前記演算手段が、前記ペーストが転写された電極の輝度とペーストが転写されていない電極の輝度との間の輝度に設定された閾値を超えている領域と超えていない領域との比率を演算し、前記判定手段が、前記閾値を超えている領域と超えていない領域との比率に基づいて前記ペーストの転写状態の良否を判定する。   The paste transfer state determination device according to claim 2 is the paste transfer state determination device according to claim 1, wherein the calculation means includes a luminance of an electrode to which the paste is transferred and a luminance of an electrode to which the paste is not transferred. The ratio between the area exceeding the threshold set for the luminance between and the area not exceeding is calculated, and the determination means is based on the ratio between the area exceeding the threshold and the area not exceeding The quality of the paste transfer state is determined.

請求項３記載のペーストの転写状態判定方法は、電極の輝度を変化させる顔料が配合されたペーストを前記電極に転写する工程と、前記電極における輝度分布を検出する工程と、前記輝度分布に基づいてペーストが転写された領域と転写されていない領域との比率を演算する工程と、前記ペーストが転写された領域と転写されていない領域との比率に基づいて前記ペーストの転写状態の良否を判定する工程と、を含む。   The method for determining a transfer state of a paste according to claim 3 is based on the step of transferring a paste containing a pigment that changes the luminance of the electrode to the electrode, the step of detecting the luminance distribution in the electrode, and the luminance distribution. The process of calculating the ratio of the area where the paste is transferred and the area where the paste is not transferred and the ratio of the area where the paste is transferred and the area where the paste is not transferred determine the quality of the paste transfer state. And a step of performing.

本発明によれば、フラックス等のペーストの転写による電極の輝度の差を利用し、ペーストが転写された電極におけるペーストが転写された領域と転写されていない領域との比率に基づいてペーストの転写状態の良否を判定するので、ペーストの転写状態の良否を的確に判定することができ、ペーストの転写不良に起因する電極の接合不具合を防止することができる。   According to the present invention, the transfer of paste is performed based on the ratio of the area where the paste is transferred to the area where the paste is not transferred in the electrode where the paste is transferred, using the difference in brightness of the electrode due to the transfer of the paste such as flux. Since the quality of the state is determined, it is possible to accurately determine the quality of the paste transfer state, and it is possible to prevent an electrode joint failure caused by a paste transfer failure.

本発明の実施の形態について図面を参照して説明する。まず、本発明の実施の形態の実装装置の全体構成について説明する。図１において、基台１は実装装置のベースとなり、基台１上の略中央には基板２の搬送を行う基板搬送装置３がＸ方向に延伸して配設される。基板搬送装置３は基板２をクランプして固定する機能を備え、基板２を所定の位置に位置決めする基板位置決め装置としても機能する。なお、本発明において、基板２の搬送方向をＸ方向とし、これに水平面内で直交する方向をＹ方向とする。   Embodiments of the present invention will be described with reference to the drawings. First, the overall configuration of the mounting apparatus according to the embodiment of the present invention will be described. In FIG. 1, a base 1 serves as a base of a mounting apparatus, and a substrate transport device 3 that transports a substrate 2 is disposed in the center of the base 1 so as to extend in the X direction. The substrate transfer device 3 has a function of clamping and fixing the substrate 2 and also functions as a substrate positioning device that positions the substrate 2 at a predetermined position. In the present invention, the transport direction of the substrate 2 is defined as the X direction, and the direction perpendicular to the substrate 2 in the horizontal plane is defined as the Y direction.

基板搬送装置３のＹ方向における両側方には複数のパーツフィーダ４が並設される。パーツフィーダ４は内部に収納された複数の電子部品を供給口５に順次供給する電子部品供給装置として機能する。基台１のＸ方向における両端部には一対のＹテーブル６が配設され、一対のＹテーブル６にＸテーブル７が架設される。Ｘテーブル７には実装ヘッド８が装着される。Ｙテーブル６およびＸテーブル７にはＹ軸駆動機構６ａおよびＸ軸駆動機構７ａ（図２参照）が備えられ、実装ヘッド８を基台１に対して相対的に水平移動させる実装ヘッド移動手段として機能する。   A plurality of parts feeders 4 are arranged in parallel on both sides in the Y direction of the substrate transfer device 3. The parts feeder 4 functions as an electronic component supply device that sequentially supplies a plurality of electronic components stored therein to the supply port 5. A pair of Y tables 6 are disposed at both ends in the X direction of the base 1, and an X table 7 is installed on the pair of Y tables 6. A mounting head 8 is mounted on the X table 7. The Y table 6 and the X table 7 are provided with a Y-axis drive mechanism 6a and an X-axis drive mechanism 7a (see FIG. 2), as mounting head moving means for moving the mounting head 8 horizontally relative to the base 1. Function.

図２において、実装ヘッド８には複数のノズルユニット９が装着され、各ノズルユニット９の下端部にはノズル１０が装着される。各ノズル１０にはＺ軸駆動機構１０ａおよびθ軸駆動機構１０ｂが備えられ、各ノズル１０は独立してＺ方向に昇降およびθ方向（Ｚ軸周り）に回転可能に構成される。また、各ノズル１０には吸排気機構１０ｃが備えられ、ノズル１０内を真空吸引して電子部品１１を吸着し、排気して電子部品１１をリリースする真空破壊を行う。   In FIG. 2, a plurality of nozzle units 9 are mounted on the mounting head 8, and a nozzle 10 is mounted on the lower end of each nozzle unit 9. Each nozzle 10 is provided with a Z-axis drive mechanism 10a and a θ-axis drive mechanism 10b, and each nozzle 10 is configured to be able to move up and down in the Z direction and rotate in the θ direction (around the Z axis) independently. In addition, each nozzle 10 is provided with an intake / exhaust mechanism 10c, and vacuum breaks in which the inside of the nozzle 10 is vacuum-sucked to adsorb the electronic component 11 and exhausted to release the electronic component 11.

図１において、基板搬送装置３とパーツフィーダ４の間にはラインカメラ１２が配設される。ラインカメラ１２はノズル１０に吸着された電子部品１１を下方から撮像する撮像手段として機能する。図２において、画像処理部１２ａは、ラインカメラ１２によって撮像された電子部品１１の画像から電子部品１１の外形（四辺）をパターン認識し、電子部品１１の中心位置と角度を検出する。   In FIG. 1, a line camera 12 is disposed between the substrate transfer device 3 and the parts feeder 4. The line camera 12 functions as an imaging unit that images the electronic component 11 adsorbed by the nozzle 10 from below. In FIG. 2, the image processing unit 12 a recognizes the outer shape (four sides) of the electronic component 11 from the image of the electronic component 11 captured by the line camera 12 and detects the center position and angle of the electronic component 11.

図１において、基板搬送装置３とパーツフィーダ４の間でラインカメラ１２の側方にはペースト供給手段としてのフラックス供給部１３が配設される。フラックス供給部１３の上部には、電子部品１１の電極に形成された複数のバンプ１１ａ（図２参照）に供給するフラックスや銀ペースト等のペーストが貯留され、ノズル１０に吸着された電子部品１１の各バンプ１１ａの表面に転写されるようになっている。フラックスには、例えば黒色のカヤセットが配合され、バンプ１１ａの輝度を低下させる効果を伴っている。   In FIG. 1, a flux supply unit 13 serving as a paste supply unit is disposed beside the line camera 12 between the substrate transfer device 3 and the parts feeder 4. In the upper part of the flux supply unit 13, a paste such as flux or silver paste supplied to a plurality of bumps 11 a (see FIG. 2) formed on the electrodes of the electronic component 11 is stored, and the electronic component 11 adsorbed by the nozzle 10. Are transferred to the surface of each bump 11a. For example, a black kaya set is blended in the flux, which has an effect of reducing the luminance of the bump 11a.

図１において、基板搬送装置３とパーツフィーダ４の間でフラックス供給部１３の側方にはカメラ１４が配設される。カメラ１４にはＣＣＤやＣＭＯＳ等の光センサが備えられ、対象物の反射光を感知する複数の画素が配列される。図２において、輝度分布検出部１４ａは、カメラ１４の画素毎に感知された反射光の強弱に基づいて対象物の輝度分布を検出する。従って、ノズル１０に吸着された電子部品１１の複数のバンプ１１ａにおける輝度分布を検出する場合には、輝度分布を検出したい箇所をカメラ１４の撮像領域に位置させる。   In FIG. 1, a camera 14 is disposed beside the flux supply unit 13 between the substrate transfer device 3 and the parts feeder 4. The camera 14 is provided with an optical sensor such as a CCD or a CMOS, and a plurality of pixels that sense the reflected light of the object are arranged. In FIG. 2, the luminance distribution detector 14 a detects the luminance distribution of the object based on the intensity of the reflected light sensed for each pixel of the camera 14. Therefore, when detecting the luminance distribution in the plurality of bumps 11 a of the electronic component 11 attracted by the nozzle 10, the position where the luminance distribution is to be detected is positioned in the imaging region of the camera 14.

図３は輝度分布検出部１４ａにより検出されたバンプ１１ａにおける輝度分布を示している。図３（ａ）において、フラックスが転写されていないバンプ１１ａの場合、金や半田で形成されるバンプ１１ａの強い反射光によりバンプ１１ａ全体は高輝度で検出され、バンプに比べて低反射性であるレジストやパッシベーションなどの樹脂により覆われた電子部品１１の本体１１ｂは低輝度で検出される。一方、図３（ｂ）、（ｃ）はフラックス
が転写されたバンプ１１ａの輝度分布を示しており、通常使用される淡色系のフラックスが転写されたバンプ１１ａは、図３（ｂ）に示すように高輝度で検出され、暗色系の顔料が配合されたフラックスが転写されたバンプ１１ａは、図３（ｃ）に示すように、フラックスが転写されていないバンプ１１ａにおける輝度（図３（ａ）参照）より低輝度で検出される。 FIG. 3 shows the luminance distribution in the bump 11a detected by the luminance distribution detector 14a. In FIG. 3A, in the case of the bump 11a to which the flux has not been transferred, the entire bump 11a is detected with high luminance by the strong reflected light of the bump 11a formed of gold or solder, and is less reflective than the bump. The main body 11b of the electronic component 11 covered with a resin such as a certain resist or passivation is detected with low luminance. On the other hand, FIGS. 3B and 3C show the luminance distribution of the bump 11a to which the flux is transferred, and the normally used bump 11a to which the light-colored flux is transferred is shown in FIG. 3B. As shown in FIG. 3C, the bump 11a to which the flux mixed with the dark pigment is transferred and the brightness of the bump 11a to which the flux is not transferred (FIG. ))) Detected at lower brightness.

そこで、フラックスが転写されてないバンプ１１ａにおける輝度（図３（ａ）参照）と暗色系の顔料が配合されたフラックスが転写されたバンプ１１ａにおける輝度の間に閾値ＴＨを設定し、検出された輝度分布と閾値ＴＨを比較してバンプ１１ａにおけるフラックスの転写状態を判定する。例えば、図３（ｄ）に示すように、バンプ１１ａにフラックスが転写された領域１１ｃと転写されていない領域１１ｄが混在する場合、転写された領域１１ｃは閾値ＴＨより低輝度で検出され、転写されていない領域１１ｄは閾値ＴＨより高輝度で検出される。この場合、閾値ＴＨより高輝度で検出される領域が大きいほどフラックスが転写されていない領域が大きいことになり、フラックスの不良転写が発生していると判定できる。   Therefore, a threshold TH is set between the brightness of the bump 11a to which the flux is not transferred (see FIG. 3A) and the brightness of the bump 11a to which the flux containing the dark pigment is transferred, and is detected. The brightness distribution and the threshold value TH are compared to determine the transfer state of the flux on the bump 11a. For example, as shown in FIG. 3D, when the area 11c to which the flux is transferred and the area 11d to which the flux is not transferred are mixed on the bump 11a, the transferred area 11c is detected with a luminance lower than the threshold value TH and the transfer is performed. The region 11d that has not been detected is detected with higher brightness than the threshold value TH. In this case, the larger the area detected with higher brightness than the threshold value TH, the larger the area where the flux is not transferred, and it can be determined that defective transfer of the flux occurs.

図２において、制御部１５は、Ｙ軸駆動機構６ａおよびＸ軸駆動機構７ａ、Ｚ軸駆動機構１０ａ、θ軸駆動機構１０ｂ、吸排気機構１０ｃ、画像処理部１２ａ、輝度分布検出部１４ａとの間で電気信号の送受信可能に接続される。制御部１５には記憶領域１５ａと演算領域１５ｂが含まれ、記憶領域１５ａに記憶された制御プログラムや各種パラメータに基づいて実装装置の動作制御を行う。記憶領域１５ａには、上述した閾値ＴＨのほかにフラックスの転写状態の良否を判定するための許容値が設定される。   In FIG. 2, the control unit 15 includes a Y-axis drive mechanism 6a, an X-axis drive mechanism 7a, a Z-axis drive mechanism 10a, a θ-axis drive mechanism 10b, an intake / exhaust mechanism 10c, an image processing unit 12a, and a luminance distribution detection unit 14a. They are connected so that electrical signals can be transmitted and received between them. The control unit 15 includes a storage area 15a and a calculation area 15b, and performs operation control of the mounting apparatus based on a control program and various parameters stored in the storage area 15a. In addition to the above-described threshold value TH, an allowable value for determining the quality of the flux transfer state is set in the storage area 15a.

フラックスの転写状態の良否は、バンプ１１ａにおける輝度分布のうち閾値ＴＨを超える輝度を示す画素数のバンプ１１ａの円領域に含まれる画素数に対する比率（以下、輝度異常画素比率という）により判定され、輝度異常画素比率が許容値（許容比率）を超える場合に不良転写が発生していると判定する。記憶領域１５ａにはバンプ１１ａの径が記憶され、この径に基づいてバンプ１１ａの円領域に含まれる画素数が算出される。また、記憶領域１５ａには、電子部品１１の電極に形成された複数のバンプ１１ａの電子部品１１の中心に対する相対位置が記憶され、画像処理部１２ａにより検出された電子部品１１の中心位置および角度に基づいて各バンプ１１ａの位置を算出できるようになっている。フラックスの転写状態の判定の際には、電子部品１１の中心に対する相対位置に基づいて任意のバンプ１１ａをカメラ１４の撮像領域に順次位置決めし、全てのバンプ１１ａにおける輝度分布を検出し、それぞれ閾値ＴＨおよび許容値との比較を行う。   The quality of the transfer state of the flux is determined by the ratio of the number of pixels showing the luminance exceeding the threshold TH in the luminance distribution in the bump 11a to the number of pixels included in the circular area of the bump 11a (hereinafter referred to as luminance abnormal pixel ratio). When the abnormal luminance pixel ratio exceeds the allowable value (allowable ratio), it is determined that defective transfer has occurred. The storage area 15a stores the diameter of the bump 11a, and the number of pixels included in the circular area of the bump 11a is calculated based on the diameter. The storage area 15a stores the relative positions of the plurality of bumps 11a formed on the electrodes of the electronic component 11 with respect to the center of the electronic component 11, and the center position and angle of the electronic component 11 detected by the image processing unit 12a. The position of each bump 11a can be calculated based on the above. When determining the transfer state of the flux, arbitrary bumps 11a are sequentially positioned in the imaging region of the camera 14 based on the relative position with respect to the center of the electronic component 11, and the luminance distribution in all the bumps 11a is detected, and the respective threshold values are detected. Comparisons are made with TH and tolerance values.

このように、カメラ１４と輝度分布検出部１４ａは、フラックスが転写されたバンプ１１ａにおける輝度分布を検出する輝度分布検出手段として機能し、制御部１５は、バンプ１１ａにおける輝度分布に基づいてフラックスが転写された領域と転写されていない領域との比率を演算し、また、フラックスが転写されたバンプ１１ａにおける輝度分布から所定の輝度に設定した閾値ＴＨを超えている領域と超えていない領域との比率を演算する演算手段として機能するとともに、フラックスが転写された領域と転写されていない領域との比率に基づいてフラックスの転写状態の良否を判定し、また、閾値ＴＨを超えている領域と超えていない領域との比率に基づいてフラックスの転写状態の良否を判定する判定手段として機能する。   As described above, the camera 14 and the luminance distribution detection unit 14a function as luminance distribution detection means for detecting the luminance distribution in the bump 11a to which the flux is transferred, and the control unit 15 determines the flux based on the luminance distribution in the bump 11a. The ratio between the transferred area and the non-transferred area is calculated, and the area between the area exceeding the threshold TH set to a predetermined luminance from the luminance distribution in the bump 11a to which the flux is transferred and the area not exceeding It functions as a calculation means for calculating the ratio, determines the quality of the transfer state of the flux based on the ratio of the area where the flux is transferred and the area where the flux is not transferred, and also exceeds the area where the threshold value TH is exceeded. It functions as a determination unit that determines the quality of the transfer state of the flux based on the ratio to the area that is not.

なお、電子部品１１が微小チップである場合には、カメラ１４の撮像領域に電子部品１１の全体が含まれることがある。このような場合には、電子部品１１全体を撮像して複数のバンプ１１ａにおける輝度分布を一度に検出することが可能である。また、フラックスが転写された部分の輝度が、フラックスが転写されていない部分の輝度より高輝度で検出されるように構成することも可能である。この場合、フラックスに赤色のキナクリドンな
どの高反射性の顔料を配合し、フラックスが転写されてないバンプ１１ａにおける輝度とフラックスが転写されたバンプ１１ａにおける輝度との間に閾値を設定し、輝度分布のうち閾値を下回る輝度を示す画素数の認識対象全体の画素数に対する比率によりフラックスの転写状態の良否を判定する。また、上述した電子部品１１の電極にはバンプ１１ａが形成されており、バンプ１１ａ自体を電子部品１１の電極として構成しているが、電極が電子部品１１の下面から突出する凸状体等であればバンプ１１ａを介さずに基板２と接合できるので、その場合には電極自体にフラックスを転写し、電極自体におけるフラックスの転写状態の良否を判定する。 When the electronic component 11 is a microchip, the entire electronic component 11 may be included in the imaging area of the camera 14. In such a case, it is possible to detect the luminance distribution in the plurality of bumps 11a at a time by imaging the entire electronic component 11. It is also possible to configure so that the luminance of the portion where the flux is transferred is detected at a higher luminance than the luminance of the portion where the flux is not transferred. In this case, a highly reflective pigment such as red quinacridone is blended in the flux, a threshold is set between the luminance of the bump 11a to which the flux is not transferred and the luminance of the bump 11a to which the flux is transferred, and the luminance distribution. The quality of the transfer state of the flux is determined based on the ratio of the number of pixels having a luminance lower than the threshold to the number of pixels of the entire recognition target. In addition, bumps 11 a are formed on the electrodes of the electronic component 11 described above, and the bumps 11 a themselves are configured as electrodes of the electronic component 11. However, the electrodes are convex bodies or the like that protrude from the lower surface of the electronic component 11. If there is, it can be bonded to the substrate 2 without the bumps 11a. In this case, the flux is transferred to the electrode itself, and the quality of the flux transfer state on the electrode itself is judged.

制御部１５にはキーボードやドライバ等からなる入力部１６が接続され、制御部１５にアクセスして記憶領域１５ａにデータの入力等を行う。さらに、制御部１５には出力部１７が接続される。出力部１７は、ＣＲＴや液晶パネル等の表示手段を備え、実装装置における動作状況を可視表示するほか、警告手段を備え、実装装置の稼動中にエラーが生じた場合等にオペレータに警告する。   An input unit 16 including a keyboard and a driver is connected to the control unit 15 and accesses the control unit 15 to input data to the storage area 15a. Further, an output unit 17 is connected to the control unit 15. The output unit 17 includes display means such as a CRT and a liquid crystal panel, and displays the operation status in the mounting apparatus visually, and also includes warning means to warn the operator when an error occurs during operation of the mounting apparatus.

このように構成される実装装置は、電子部品の電極におけるフラックスの転写状態の良否を判定する機能を備えており、次に、フラックスの転写状態の良否を判定する方法について図４を参照して説明する。まず、実装対象となる電子部品１１の電極に形成された各バンプ１１ａの径および位置を設定する（ＳＴ１）。各バンプ１１ａの位置に関しては電子部品１１の中心位置に対する相対位置で設定する。各バンプ１１ａが規則的にマトリックス配列して形成されている場合には、行列数および行ピッチ、列ピッチで設定するようにしてもよい。   The mounting apparatus configured as described above has a function of determining the quality of the transfer state of the flux in the electrodes of the electronic component. Next, a method for determining the quality of the transfer state of the flux is described with reference to FIG. explain. First, the diameter and position of each bump 11a formed on the electrode of the electronic component 11 to be mounted are set (ST1). The position of each bump 11a is set relative to the center position of the electronic component 11. When the bumps 11a are regularly formed in a matrix arrangement, the number of rows, the row pitch, and the column pitch may be set.

次に、閾値ＴＨおよび許容比率を設定する（ＳＴ２）。このうち閾値ＴＨは、フラックスが転写されてないバンプ１１ａにおける輝度と暗色系の顔料が配合されたフラックスが転写されたバンプ１１ａにおける輝度の間に設定する。また、許容比率は、バンプ１１ａの円領域全体に対するフラックスが転写された領域の比率を画素比で表したものであり、電子部品１１と基板２の間で要求される接合品質を物理的、電気的に許容できる値に設定する。なお、ＳＴ１とＳＴ２については何れの順序であってもよい。   Next, a threshold value TH and an allowable ratio are set (ST2). Of these, the threshold value TH is set between the luminance of the bump 11a to which the flux is not transferred and the luminance of the bump 11a to which the flux containing the dark pigment is transferred. The allowable ratio is the ratio of the area where the flux is transferred to the entire circular area of the bump 11a, expressed as a pixel ratio, and the bonding quality required between the electronic component 11 and the substrate 2 is physically and electrically Set to an acceptable value. Note that ST1 and ST2 may be in any order.

次に、各バンプ１１ａに暗色系の顔料を配合したフラックスを転写する（ＳＴ３）。フラックスはフラックス供給部１３の上部に貯留されているので、各バンプ１１ａが形成された面を下向きにした状態でノズル１０に吸着された電子部品１１をフラックス供給部１３の上方で昇降させて各バンプ１１ａの表面にフラックスを転写する。   Next, a flux in which a dark pigment is blended is transferred to each bump 11a (ST3). Since the flux is stored in the upper part of the flux supply unit 13, the electronic component 11 adsorbed by the nozzle 10 is moved up and down above the flux supply unit 13 with the surface on which each bump 11 a is formed facing downward. The flux is transferred to the surface of the bump 11a.

次に、各バンプ１１ａの位置を算出する（ＳＴ４）。各バンプ１１ａの位置は、ノズル１０に吸着された電子部品１１をラインカメラ１２の上方に移動させ、撮像画像から電子部品１１の外形（四辺）をパターン認識して電子部品１１の中心位置と角度を検出し、記憶領域１５ａに記憶された各バンプ１１ａの電子部品１１の中心に対する相対位置に基づいて算出される。   Next, the position of each bump 11a is calculated (ST4). The position of each bump 11a is determined by moving the electronic component 11 adsorbed by the nozzle 10 above the line camera 12 and pattern-recognizing the external shape (four sides) of the electronic component 11 from the captured image. Is calculated based on the relative position of each bump 11a stored in the storage area 15a with respect to the center of the electronic component 11.

次に、各バンプ１１ａにおける輝度分布を検出する（ＳＴ５）。ＳＴ４において算出された各バンプ１１ａの位置に基づいて各バンプ１１ａをカメラ１４の撮像領域に順次位置決めし、各バンプ１１ａにおける輝度分布を検出する。バンプ１１ａ毎に検出された輝度分布は、ＳＴ２において設定した閾値ＴＨおよび許容比率と比較され、フラックスの転写状態の良否が判定される。全てのバンプ１１ａにおける輝度異常画素比率が許容比率を下回る場合には転写良好であると判定し（ＳＴ６）、１つでも許容比率を超える場合には転写不良であると判定し（ＳＴ７）、エラー警告を行う（ＳＴ８）。   Next, the luminance distribution in each bump 11a is detected (ST5). Based on the position of each bump 11a calculated in ST4, each bump 11a is sequentially positioned in the imaging area of the camera 14, and the luminance distribution in each bump 11a is detected. The luminance distribution detected for each bump 11a is compared with the threshold value TH and the allowable ratio set in ST2, and the quality of the flux transfer state is determined. If the luminance abnormal pixel ratio in all the bumps 11a is lower than the allowable ratio, it is determined that the transfer is good (ST6). If even one of the bumps 11a exceeds the allowable ratio, it is determined that the transfer is defective (ST7). A warning is given (ST8).

本発明によれば、フラックス等のペーストの転写不良に起因する電極の接合不具合を防止することができるので、電子部品の実装分野において特に有用である。   According to the present invention, it is possible to prevent a bonding failure of electrodes due to poor transfer of a paste such as flux, which is particularly useful in the field of mounting electronic components.

本発明の実施の形態の電子部品実装装置の全体構成図1 is an overall configuration diagram of an electronic component mounting apparatus according to an embodiment of the present invention. 本発明の実施の形態の電子部品実装装置の制御系の構成図Configuration diagram of a control system of an electronic component mounting apparatus according to an embodiment of the present invention 本発明の実施の形態の輝度分布を示す説明図Explanatory drawing which shows the luminance distribution of embodiment of this invention 本発明の実施の形態のフラックス転写状態の良否判定処理フロー図FIG. 4 is a flow chart for determining whether or not the flux is transferred according to the embodiment of the present invention.

符号の説明Explanation of symbols

１１ 電子部品
１１ａ バンプ
１４ カメラ
１４ａ 輝度分布検出部
１５ 制御部
ＴＨ 閾値 DESCRIPTION OF SYMBOLS 11 Electronic component 11a Bump 14 Camera 14a Luminance distribution detection part 15 Control part TH threshold value

Claims (3)

電極の輝度を変化させる顔料が配合されたペーストが転写された前記電極における輝度分布を検出する輝度分布検出手段と、
前記輝度分布に基づいて前記ペーストが転写された領域と転写されていない領域との比率を演算する演算手段と、
前記ペーストが転写された領域と転写されていない領域との比率に基づいて前記ペーストの転写状態の良否を判定する判定手段と、
を備えたペーストの転写状態判定装置。 A luminance distribution detecting means for detecting a luminance distribution in the electrode to which a paste containing a pigment that changes the luminance of the electrode is transferred;
A calculation means for calculating a ratio between a region where the paste is transferred and a region where the paste is not transferred based on the luminance distribution;
A determination unit for determining whether the paste is in a transfer state based on a ratio between a region where the paste is transferred and a region where the paste is not transferred;
A paste transfer state determination apparatus comprising: 前記演算手段が、前記ペーストが転写された電極の輝度とペーストが転写されていない電極の輝度との間の輝度に設定された閾値を超えている領域と超えていない領域との比率を演算し、前記判定手段が、前記閾値を超えている領域と超えていない領域との比率に基づいて前記ペーストの転写状態の良否を判定する請求項１記載のペーストの転写状態判定装置。   The calculation means calculates a ratio of a region exceeding a threshold set to a luminance between a luminance of an electrode to which the paste is transferred and a luminance of an electrode to which the paste is not transferred and a region not exceeding the threshold. The paste transfer state determination device according to claim 1, wherein the determination unit determines whether the paste transfer state is good or not based on a ratio between an area exceeding the threshold and an area not exceeding the threshold. 電極の輝度を変化させる顔料が配合されたペーストを前記電極に転写する工程と、
前記電極における輝度分布を検出する工程と、
前記輝度分布に基づいてペーストが転写された領域と転写されていない領域との比率を演算する工程と、
前記ペーストが転写された領域と転写されていない領域との比率に基づいて前記ペーストの転写状態の良否を判定する工程と、
を含むペーストの転写状態判定方法。 Transferring a paste containing a pigment that changes the brightness of the electrode to the electrode;
Detecting a luminance distribution at the electrode;
Calculating a ratio of a region where the paste is transferred and a region where the paste is not transferred based on the luminance distribution;
Determining the quality of the paste transfer state based on the ratio of the area where the paste is transferred and the area where the paste is not transferred;
A method for determining the transfer state of a paste containing.
JP2006131362A 2006-05-10 2006-05-10 Device and method for deciding transfer state of paste Pending JP2007305724A (en)

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JP2015088534A (en) * 2013-10-29 2015-05-07 パナソニックＩｐマネジメント株式会社 Electronic component mounting method
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JP2009260105A (en) * 2008-04-18 2009-11-05 Panasonic Corp Paste transfer device, and paste transfer method
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JP2015133422A (en) * 2014-01-14 2015-07-23 ヤマハ発動機株式会社 Device for mounting electronic component
CN107346742A (en) * 2016-05-05 2017-11-14 中芯国际集成电路制造（天津）有限公司 The preparation method of wafer bumps

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