JP2007294601A - Wiring board - Google Patents

Wiring board Download PDF

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JP2007294601A
JP2007294601A JP2006119478A JP2006119478A JP2007294601A JP 2007294601 A JP2007294601 A JP 2007294601A JP 2006119478 A JP2006119478 A JP 2006119478A JP 2006119478 A JP2006119478 A JP 2006119478A JP 2007294601 A JP2007294601 A JP 2007294601A
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circuit conductor
circuit
glass
wiring board
component
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JP4828998B2 (en
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Akira Wakasaki
昭 若崎
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that when a lead pin is joined to an end surface of a circuit conductor of a wiring board made of glass ceramics with an active metal containing Ag-Cu alloy brazing material, Ag-Cu alloy enters the circuit conductor during brazing as Cu contained in the circuit conductor and the active metal containing Ag-Cu alloy brazing material come into contact with each other and then a void is formed in the circuit conductor to cause the circuit conductor to increase in conduction resistance value. <P>SOLUTION: The wiring board has an insulating base 1 made of glass ceramic and circuit conductors formed on the insulating base 1 comprising a circuit portion and a joint portion formed on a side of the circuit conductor where a lead pin is connected. The joint portion contains Cu or Ag as a first component and glass as a second component, and the joint portion contains less glass than the circuit portion, where an Ni layer is formed on a surface of the joint portion. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体素子を収容するための半導体素子収納用パッケージや回路基板、電子回路モジュール等に使用される、入出力端子用のリードピンが立設されたいわゆるピングリッドアレイ（Pin Grid Array：ＰＧＡ）用の配線基板に関する。   The present invention relates to a so-called pin grid array (PGA) in which lead pins for input / output terminals are erected, which are used for semiconductor element storage packages, circuit boards, electronic circuit modules, and the like for accommodating semiconductor elements. ) For a wiring board.

従来から、ＩＣ（Integrated Circuit），ＬＳＩ（Large Scale Integration）等の半導体素子を収容するための半導体素子収納用パッケージは、一般的に、セラミック配線基板の表面に形成された回路導体にリードピン等の金属からなる端子部材が、ろう材を介して接合された、いわゆるリードピン付き配線基板の形態で用いられている。   2. Description of the Related Art Conventionally, a package for housing a semiconductor element for housing a semiconductor element such as an IC (Integrated Circuit) or LSI (Large Scale Integration) generally has a circuit conductor formed on the surface of a ceramic wiring substrate such as a lead pin. A terminal member made of metal is used in the form of a so-called wiring board with a lead pin joined through a brazing material.

近年の半導体素子の駆動の高速化にともない、誘電率の低いガラスセラミックスを絶縁基体に電気抵抗の小さいＣｕ系やＡｇ系の材料で回路導体を形成したセラミック配線基板が用いられるようになっており、回路導体の中で絶縁基体の表面に形成された電極パッドにＡｇ−Ｃｕ合金ろう材を用いてリードピン等がろう付けされる。このようなガラスセラミックスは、用いられるガラスの種類によっては磁器強度が極めて小さいものもあり、ガラスセラミックスから成る絶縁基体と電極パッドとの界面において破壊してしまう場合もある。   With the recent increase in driving speed of semiconductor elements, ceramic wiring boards in which circuit conductors are formed of glass ceramics having a low dielectric constant on an insulating substrate using Cu-based or Ag-based materials with low electrical resistance are being used. In the circuit conductor, a lead pin or the like is brazed to the electrode pad formed on the surface of the insulating substrate using an Ag—Cu alloy brazing material. Some of these glass ceramics have extremely small porcelain strength depending on the type of glass used, and may be broken at the interface between the insulating substrate made of glass ceramics and the electrode pad.

このような場合は、リードピンを接合する回路導体にリードピン接合用の電極パッドを絶縁基体の表面に形成せずに絶縁基体表面に貫通導体を露出させた形態とし、この部位を含む絶縁基体の表面に、Ｔｉ，ＺｒおよびＨｆの少なくとも１種から成る活性金属を含有するＡｇ−Ｃｕ合金ろう材（活性ろう材）を用いてリードピンを直接ろう付けする、いわゆる活性ろう付け法によりリードピンを接合した構成が提案されている。この構成では、リードピンは活性ろう材を介して回路導体（貫通導体）と電気的に接続され、リードピンの機械的接続は活性ろう材を介して主として絶縁基体に直接接合されることにより行なわれている。このため、電極パッドと絶縁基体との接合強度に依存することなくリードピンを接合することができ、絶縁基体と電極パッドとの間の界面における破壊を防止することができる（例えば、特許文献１を参照。）。   In such a case, the electrode conductor for joining the lead pins is not formed on the surface of the insulating base on the circuit conductor for joining the lead pins, and the through conductor is exposed on the surface of the insulating base, and the surface of the insulating base including this part The lead pin is joined by a so-called active brazing method in which the lead pin is brazed directly using an Ag-Cu alloy brazing material (active brazing material) containing an active metal composed of at least one of Ti, Zr and Hf. Has been proposed. In this configuration, the lead pin is electrically connected to the circuit conductor (through conductor) via the active brazing material, and the mechanical connection of the lead pin is performed mainly by being directly joined to the insulating substrate via the active brazing material. Yes. For this reason, the lead pin can be bonded without depending on the bonding strength between the electrode pad and the insulating substrate, and destruction at the interface between the insulating substrate and the electrode pad can be prevented (for example, see Patent Document 1). reference.).

また、このようなセラミック配線基板においては、ガラスセラミックスとＣｕ系やＡｇ系の材料との間で焼結挙動が異なることにより回路導体と絶縁基体との間に空隙などの欠陥が発生してしまうことから、Ｃｕ系やＡｇ系の材料の焼結挙動をガラスセラミックスの焼結挙動に近づけ、また絶縁基体との密着を良くするために、回路導体は導電性材料であるＣｕ系やＡｇ系の材料を第１の成分とし、第２の成分として焼結挙動を調節するガラス成分が添加されている。
特開平２００４−１４０２４９号公報 Moreover, in such a ceramic wiring board, defects such as voids are generated between the circuit conductor and the insulating base due to the difference in sintering behavior between the glass ceramic and the Cu-based or Ag-based material. Therefore, in order to bring the sintering behavior of Cu-based and Ag-based materials closer to the sintering behavior of glass ceramics and to improve the close contact with the insulating substrate, the circuit conductor is made of a Cu-based or Ag-based conductive material. The material is a first component, and a glass component that adjusts the sintering behavior is added as a second component.
Japanese Patent Laid-Open No. 2004-140249

しかしながら、従来の配線基板にリードピンを接合すると、ろう材に接した回路導体内にボイドが発生してしまう場合があり、特にろう付け温度が高く、ろう付け時間が長い場合には、配線基板のさらに内部に位置する回路導体内にまでボイドが発生してしまうこともあった。   However, when lead pins are joined to a conventional wiring board, voids may occur in the circuit conductor in contact with the brazing material. Especially when the brazing temperature is high and the brazing time is long, the wiring board Further, voids may occur even in the circuit conductor located inside.

このように回路導体内にボイドが発生した場合、導通抵抗の増加や断線などの不良が発生してしまう場合があった。特に、近年の配線基板に対する小型化や高密度化の要求に対応するために回路導体を微細なものとした場合には、回路導体の内部に発生したボイドが小さいあるいは少ないものであってもその影響は大きく、導通抵抗の増加や断線を顕著に誘発し、リードピン付き配線基板の電気的特性や機械的信頼性を十分に確保できないという問題があった。   When voids are generated in the circuit conductor as described above, defects such as increase in conduction resistance and disconnection may occur. In particular, when the circuit conductor is made minute in order to meet the recent demands for miniaturization and higher density of the wiring board, even if the void generated inside the circuit conductor is small or small, The influence is great, and there is a problem that the electrical resistance and the mechanical reliability of the wiring board with lead pins cannot be sufficiently secured because the increase in conduction resistance and disconnection are remarkably induced.

このような不具合について研究した結果、本発明者は、ろう付け時に回路導体のＣｕやＡｇがろう材に取り込まれることに起因して上記の不具合が誘発されるということを見出した。すなわち、ろう付け温度では、溶融したＡｇ−Ｃｕ合金を主成分とするろう材とＣｕやＡｇを主成分とする回路導体とが接しており、この界面では回路導体のＣｕやＡｇが溶融したろう材に溶解されるので、溶融したＡｇ−Ｃｕ合金（液相）が回路導体内に浸入していく。このとき、ろう材に溶解された回路導体のＣｕやＡｇの跡が空隙となるため、ろう付け後には回路導体内に浸入したＡｇ−Ｃｕ合金と回路導体のＣｕやＡｇとの界面にこの空隙がボイドとして残留してしまう。   As a result of studying such defects, the present inventor has found that the above-described defects are induced due to the incorporation of Cu and Ag of the circuit conductor into the brazing material during brazing. That is, at the brazing temperature, the brazing material mainly composed of the molten Ag—Cu alloy is in contact with the circuit conductor mainly composed of Cu or Ag, and Cu or Ag of the circuit conductor is melted at this interface. Since it is dissolved in the material, the molten Ag—Cu alloy (liquid phase) enters the circuit conductor. At this time, since traces of Cu and Ag of the circuit conductor dissolved in the brazing material become voids, after the brazing, the voids are formed at the interface between the Ag-Cu alloy infiltrated into the circuit conductor and the Cu and Ag of the circuit conductor. Will remain as voids.

本発明は、上記の問題点を解決するために案出されたものであり、その目的は、ろう付けの際の回路導体内への溶融したＡｇ−Ｃｕ合金ろう材の浸入を抑制することにより、ボイドによる回路導体の導通抵抗の増加や断線を抑えることのできる、狭ピンピッチで高信頼性を有するリードピン付き配線基板用の配線基板を提供することにある。   The present invention has been devised to solve the above-described problems, and its purpose is to suppress the intrusion of the molten Ag—Cu alloy brazing material into the circuit conductor during brazing. An object of the present invention is to provide a wiring board for a wiring board with lead pins having a narrow pin pitch and high reliability, which can suppress an increase in conduction resistance and disconnection of a circuit conductor due to voids.

本発明の配線基板は、ガラスセラミックスから成る絶縁基体と、該絶縁基体に形成され回路導体とを有し、該回路導体に、Ｔｉ，ＺｒおよびＨｆのうちの少なくとも一種を含むＡｇ−Ｃｕ合金ろう材を介してリードピンが接合される配線基板であって、前記回路導体は、第１の成分であるＣｕまたはＡｇと、第２の成分であるガラスとを含み、回路部と、前記回路導体における前記リードピンが接続される側に形成される接合部とからなり、該接合部におけるガラスの含有量が前記回路部におけるガラスの含有量に比較して少なく、且つ前記接合部の表面にＮｉ層が形成されていることを特徴とするものである。   The wiring board of the present invention has an insulating base made of glass ceramics and a circuit conductor formed on the insulating base, and the circuit conductor contains at least one of Ti, Zr and Hf. A wiring board to which a lead pin is bonded via a material, wherein the circuit conductor includes Cu or Ag as a first component and glass as a second component, and includes a circuit portion and a circuit conductor in the circuit conductor. A bonding portion formed on a side to which the lead pin is connected, the glass content in the bonding portion is smaller than the glass content in the circuit portion, and a Ni layer is formed on the surface of the bonding portion. It is characterized by being formed.

また、本発明の配線基板は、前記回路部における前記第２の成分の含有量が前記第１の成分に対して８質量％乃至３０質量％、前記接合部における前記第２の成分の含有量が前記第１の成分に対して５質量％未満であり、且つ前記Ｎｉ層の厚みが１μｍ乃至１５μｍであることを特徴とするものである。   In the wiring board of the present invention, the content of the second component in the circuit portion is 8% by mass to 30% by mass with respect to the first component, and the content of the second component in the joint portion. Is less than 5% by mass with respect to the first component, and the thickness of the Ni layer is 1 μm to 15 μm.

本発明の配線基板によれば、回路導体は、第１の成分であるＣｕまたはＡｇと、第２の成分であるガラスとを含み、回路部と、前記回路導体における前記リードピンが接続される側に形成される接合部とからなり、該接合部におけるガラスの含有量が前記回路部におけるガラスの含有量に比較して少なくしてあることから、接合部の表面に露出したガラスが少ないので、めっき法にて接合部の表面に形成されたＮｉから成る層を、ピンホールなどの欠陥が少なく、且つ十分に被覆されたものとなすことができる。また接合部の表面にＮｉ層が形成されていることから、Ｔｉ，ＺｒおよびＨｆのうちの少なくとも一種を含むＡｇ−Ｃｕ合金ろう材（以下、活性金属含有Ａｇ−Ｃｕ合金ろう材ともいう）によりリードピンを接合する際に、回路導体のＣｕまたはＡｇと溶融した活性金属含有Ａｇ−Ｃｕ合金ろう材とが接することがないので、溶融した活性金属含有Ａｇ−Ｃｕ合金ろう材に回路導体のＣｕまたはＡｇが溶解されることにより回路導体内にボイドが発生することを抑制することができる。これにより導通抵抗の増加や断線などの不良がないリードピン付配線基板を作製することができる。   According to the wiring board of the present invention, the circuit conductor includes Cu or Ag as the first component and glass as the second component, and the circuit portion is connected to the lead pin of the circuit conductor. Since the glass content in the joint part is less than the glass content in the circuit part, the glass exposed on the surface of the joint part is less, The layer made of Ni formed on the surface of the joint portion by plating can be made to be sufficiently covered with few defects such as pinholes. In addition, since the Ni layer is formed on the surface of the joint portion, an Ag—Cu alloy brazing material containing at least one of Ti, Zr and Hf (hereinafter also referred to as an active metal-containing Ag—Cu alloy brazing material) is used. When the lead pin is joined, the Cu or Ag of the circuit conductor does not contact the molten active metal-containing Ag—Cu alloy brazing material. Generation | occurrence | production of a void in a circuit conductor can be suppressed by melt | dissolving Ag. As a result, it is possible to manufacture a wiring board with lead pins that is free from defects such as increase in conduction resistance and disconnection.

また、本発明の配線基板によれば、前記回路部における前記第２の成分の含有量が前記第１の成分に対して８質量％乃至３０質量％であることから回路導体の導通抵抗を大きく上げることなく回路導体の材料の焼結挙動（焼結挙動とは回路導体やガラスセラミックスの焼結時の収縮の挙動を意味する。）を、絶縁基体の材料であるガラスセラミックスの焼結挙動に近づけることことにより、回路導体内のみならず回路導体と絶縁基体との間にも空隙などの欠陥のない配線基板を作成する事ができる。また、前記接合部における前記第２の成分の含有量が前記第１の成分に対して５質量％未満であることから接合部の表面に露出したガラスが十分に少ないのでめっき法にてＮｉ層を形成する場合に１μｍという薄い厚みでピンホールなどの欠陥なく接合部の表面を十分に被覆することができる。さらに前記Ｎｉ層の厚みが１μｍ乃至１５μｍであることから、活性金属含有Ａｇ−Ｃｕ合金ろう材によりリードピンを接合する際に、活性金属含有Ａｇ−Ｃｕ合金ろう材へ拡散するＮｉの量が少ないので、Ｎｉの拡散により形成される脆弱な合金層の厚みを薄くすることができ、リードピンをより強固に接合することが可能な配線基板を作成する事ができる。   Further, according to the wiring board of the present invention, since the content of the second component in the circuit portion is 8% by mass to 30% by mass with respect to the first component, the conduction resistance of the circuit conductor is increased. Sintering behavior of circuit conductor materials (sintering behavior means the shrinkage behavior during sintering of circuit conductors and glass ceramics) By bringing them closer, it is possible to create a wiring board having no defects such as a gap not only in the circuit conductor but also between the circuit conductor and the insulating base. In addition, since the content of the second component in the joint is less than 5% by mass with respect to the first component, the amount of glass exposed on the surface of the joint is sufficiently small. In the case of forming, the surface of the joint can be sufficiently covered with a thin thickness of 1 μm without defects such as pinholes. Further, since the thickness of the Ni layer is 1 μm to 15 μm, the amount of Ni diffusing into the active metal-containing Ag—Cu alloy brazing material is small when joining the lead pin with the active metal-containing Ag—Cu alloy brazing material. The thickness of the brittle alloy layer formed by the diffusion of Ni can be reduced, and a wiring board capable of bonding the lead pins more firmly can be produced.

本発明の配線基板について以下に詳細に説明する。図１は本発明の配線基板の実施の形態の一例を示す断面図である。図２および図３は図１におけるＡ部拡大の一例を示す断面図である。図１乃至図３において１は絶縁基体、２は回路導体、３はＮｉ層、４は配線基板、５はろう材、６はリードピン、７は電極、８は半導体素子、９は金属細線であり、本発明の配線基板４の下面にろう材５を介してリードピン６を接合し、上面に半導体素子８を搭載して、配線基板４の電極７と半導体素子８とをＡｕ等からなる金属細線９を用いたワイヤーボンディングにより電気的に接続した例である。   The wiring board of the present invention will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of a wiring board according to the present invention. 2 and 3 are cross-sectional views showing an example of an enlargement of the portion A in FIG. 1 to 3, 1 is an insulating substrate, 2 is a circuit conductor, 3 is a Ni layer, 4 is a wiring board, 5 is a brazing material, 6 is a lead pin, 7 is an electrode, 8 is a semiconductor element, and 9 is a fine metal wire. The lead pin 6 is joined to the lower surface of the wiring board 4 of the present invention via the brazing material 5, the semiconductor element 8 is mounted on the upper surface, and the electrode 7 and the semiconductor element 8 of the wiring board 4 are made of a fine metal wire made of Au or the like. 9 is an example of electrical connection by wire bonding using 9.

絶縁基体１はガラスセラミックスから成るものであり、ガラス粉末とフィラー粉末との焼結体である。ガラス粉末やフィラー粉末は従来のガラスセラミックスに用いられているものを用いればよく、例えばガラス粉末はＳｉＯ２−Ｂ２Ｏ３系、ＳｉＯ２−Ｂ２Ｏ３−Ａｌ２Ｏ３系、ＳｉＯ２−Ｂ２Ｏ３−Ａｌ２Ｏ３−ＭＯ系（但し、ＭはＣａ，Ｓｒ，Ｍｇ，ＢａまたはＺｎを示す）、ＳｉＯ２−Ａｌ２Ｏ３−Ｍ１Ｏ−Ｍ２Ｏ系（但し、Ｍ１およびＭ２は同じまたは異なっていて、Ｃａ，Ｓｒ，Ｍｇ，ＢａまたはＺｎを示す）、ＳｉＯ２−Ｂ２Ｏ３−Ａｌ２Ｏ３−Ｍ１Ｏ−Ｍ２Ｏ系（但し、Ｍ１およびＭ２は上記と同じである）、ＳｉＯ２−Ｂ２Ｏ３−Ｍ３ ２Ｏ系（但し、Ｍ３はＬｉ，ＮａまたはＫを示す）、ＳｉＯ２−Ｂ２Ｏ３−Ａｌ２Ｏ３−Ｍ３ ２Ｏ系（但し、Ｍ３は上記と同じである）、Ｐｂ系、Ｂｉ系等のガラスの粉末が挙げられる。またフィラー粉末は、Ａｌ２Ｏ３，ＳｉＯ２，ＺｒＯ２とアルカリ土類金属酸化物との複合酸化物、ＴｉＯ２とアルカリ土類金属酸化物との複合酸化物、Ａｌ２Ｏ３およびＳｉＯ２から選ばれる少なくとも１種を含む複合酸化物（スピネル，ムライト，コージェライト等）等のセラミックスの粉末が挙げられる。ガラス粉末とフィラー粉末の割合は、質量比で１０：９０乃至９９：１であり、好ましくは４０：６０乃至８０：２０である。 The insulating substrate 1 is made of glass ceramics and is a sintered body of glass powder and filler powder. Glass powder and filler powder may be used those used in the conventional glass ceramics, for example glass powder SiO 2 -B 2 O 3 -based, SiO 2 -B 2 O 3 -Al 2 O 3 system, SiO 2 —B 2 O 3 —Al 2 O 3 —MO system (where M represents Ca, Sr, Mg, Ba or Zn), SiO 2 —Al 2 O 3 —M 1 O—M 2 O system (provided that M 1 and M 2 are the same or different and represent Ca, Sr, Mg, Ba or Zn), SiO 2 —B 2 O 3 —Al 2 O 3 —M 1 O—M 2 O system (provided that M 1 and M 2 are the same as above), SiO 2 —B 2 O 3 —M 3 2 O system (where M 3 represents Li, Na or K), SiO 2 —B 2 O 3 —Al 2 O 3 -M 3 2 O system (where M 3 is the same as above) ), Pb-based and Bi-based glass powders. The filler powder is composed of Al 2 O 3 , SiO 2 , ZrO 2 and a complex oxide of alkaline earth metal oxide, TiO 2 and a complex oxide of alkaline earth metal oxide, Al 2 O 3 and SiO 2. And ceramic powders such as complex oxides (spinel, mullite, cordierite, etc.) containing at least one selected from the above. The ratio of the glass powder to the filler powder is 10:90 to 99: 1 by mass ratio, and preferably 40:60 to 80:20.

回路導体２は、第１の成分であるＣｕまたはＡｇと第２の成分であるガラスとを含むものであり、これらの成分を含む焼結体である。第２の成分のガラスの粉末としては、絶縁基体１に用いられるガラス粉末として挙げられたものを用いることができる。回路導体のガラス粉末は、回路導体２の成分の焼結挙動を絶縁基体１のガラスセラミックスの焼結挙動に近づけるために含むものであるので、軟化点等の焼結挙動に関係する特性が絶縁基体１に用いられるガラス粉末に近いものが用いられ、好ましくは絶縁基体１に用いられるガラス粉末と同じものが用いられる。   The circuit conductor 2 contains Cu or Ag as the first component and glass as the second component, and is a sintered body containing these components. As the glass powder of the second component, those mentioned as the glass powder used for the insulating substrate 1 can be used. Since the glass powder of the circuit conductor includes the sintering behavior of the components of the circuit conductor 2 in order to approximate the sintering behavior of the glass ceramics of the insulating substrate 1, characteristics relating to the sintering behavior such as the softening point have the insulating substrate 1. Those close to the glass powder used for the insulating substrate 1 are used, and preferably the same glass powder used for the insulating substrate 1 is used.

回路導体２は、回路部２ａと、回路導体２におけるリードピン６が接続される側に形成される接合部２ｂとからなる。接合部２ｂは、図２に示すように貫通孔内に形成され、貫通導体である回路導体２の一部として形成される場合や、図３に示すように貫通孔の上に形成される場合、すなわち貫通導体である回路部２ａの配線基板４の表面に露出した部分を覆うように形成される場合がある。接合部２ｂが貫通孔内に形成され、貫通導体である回路導体２の一部として形成された場合は、活性金属含有Ａｇ−Ｃｕ合金ろう材５と絶縁基体１が貫通孔を除く部分で直接接合できるために、リードピン６の接合強度を高いものとすることができる点で好ましい。接合部２ｂが貫通孔（貫通導体）の上に形成される場合は、回路部２ａを覆うために貫通孔（貫通導体）の径以上に形成されるが、活性金属含有Ａｇ−Ｃｕ合金ろう材５によるリードピン６の接合強度を高いものとするためには、活性金属含有Ａｇ−Ｃｕ合金ろう材５と絶縁基体１とが接合される面積が大きい方がよいので、接合部２ｂの径は、好ましくは貫通孔（貫通導体）と同程度の径であるのがよい。   The circuit conductor 2 includes a circuit portion 2a and a joint portion 2b formed on the side of the circuit conductor 2 to which the lead pin 6 is connected. The joint 2b is formed in the through hole as shown in FIG. 2 and is formed as a part of the circuit conductor 2 that is a through conductor, or is formed on the through hole as shown in FIG. That is, it may be formed so as to cover a portion exposed on the surface of the wiring board 4 of the circuit portion 2a which is a through conductor. When the joint portion 2b is formed in the through hole and formed as a part of the circuit conductor 2 which is a through conductor, the active metal-containing Ag-Cu alloy brazing material 5 and the insulating base 1 are directly in the portion excluding the through hole. Since it can join, it is preferable at the point which can make the joining strength of the lead pin 6 high. When the joining portion 2b is formed on the through hole (through conductor), it is formed to have a diameter larger than that of the through hole (through conductor) so as to cover the circuit portion 2a, but the active metal-containing Ag—Cu alloy brazing material In order to increase the bonding strength of the lead pin 6 by 5, the area where the active metal-containing Ag—Cu alloy brazing material 5 and the insulating base 1 are bonded is preferably large. The diameter is preferably about the same as that of the through hole (through conductor).

また、接合部２ｂにおけるガラスの含有量は、回路部２のガラスの含有量に比較して少なく成してあるとともに、接合部２ｂの表面にはＮｉ層３が形成されている。接合部２ｂの表面に露出したガラスが少ないので、めっき法にて接合部２ｂの表面に形成されたＮｉから成る層３はピンホールなどの欠陥が少なく十分に被覆されたものとなすことができる。また接合部２ｂの表面にＮｉ層３が形成されていることから、活性金属含有Ａｇ−Ｃｕ合金ろう材５によりリードピン６を接合する際に、回路導体２のＣｕまたはＡｇと溶融した活性金属含有Ａｇ−Ｃｕ合金ろう材５とが接することがないので、溶融した活性金属含有Ａｇ−Ｃｕ合金ろう材５に回路導体２のＣｕまたはＡｇが溶解されることにより回路導体２内にボイドが発生することを抑制することができ、導通抵抗の増加や断線などの不良がないリードピン付配線基板を作製することができる配線基板４となる。   Further, the glass content in the joint portion 2b is smaller than the glass content in the circuit portion 2, and the Ni layer 3 is formed on the surface of the joint portion 2b. Since there is little glass exposed on the surface of the joint 2b, the layer 3 made of Ni formed on the surface of the joint 2b by plating can be sufficiently covered with few defects such as pinholes. . Further, since the Ni layer 3 is formed on the surface of the joint portion 2b, when the lead pin 6 is joined by the active metal-containing Ag—Cu alloy brazing material 5, Cu or Ag contained in the circuit conductor 2 is fused with the active metal. Since the Ag—Cu alloy brazing material 5 does not come into contact with each other, voids are generated in the circuit conductor 2 by dissolving Cu or Ag of the circuit conductor 2 in the molten active metal-containing Ag—Cu alloy brazing material 5. Thus, the wiring board 4 can be manufactured with a lead pin-attached wiring board free from defects such as increase in conduction resistance and disconnection.

また、本発明の配線基板４は、接合部２ｂの第２の成分であるガラスの含有量が第１の成分に対して５質量％未満、回路部２ａの第２の成分であるガラスの含有量が第１の成分に対して８質量％乃至３０質量％になしてあり、且つＮｉ層３の厚みが１μｍ乃至１５μｍであることが好ましい。回路部２ａの第２の成分であるガラスの含有量が第１の成分に対して８質量％乃至３０質量％になしてあることから、回路導体２の導通抵抗を大きく上げることなく回路導体２の材料の焼結挙動を絶縁基体１の材料であるガラスセラミックスの焼結挙動に近づけることができるので、回路導体２内のみならず回路導体２と絶縁基体との間にも空隙などの欠陥の少ない配線基板４となるとともに、接合部２ｂの第２の成分であるガラスの含有量が第１の成分に対して５質量％未満であることから、接合部２ｂの表面に露出したガラスが十分に少なく、これによりめっき法にてＮｉ層３を形成する場合に１μｍという薄い厚みでピンホールなどの欠陥が少なく且つ接合部の表面を十分に被覆することができる。また、Ｎｉ層３の厚みが１μｍ乃至１５μｍであることから、活性金属含有Ａｇ−Ｃｕ合金ろう材５によりリードピン６を接合する際に、活性金属含有Ａｇ−Ｃｕ合金ろう材５へ拡散するＮｉの量が少ないので、Ｎｉの拡散により形成される脆弱な合金層の厚みを薄くすることができ、リードピン６をより強固に接合することが可能な配線基板４となる。   In addition, the wiring board 4 of the present invention has a glass content that is the second component of the joint portion 2b of less than 5% by mass with respect to the first component, and the glass content that is the second component of the circuit portion 2a. The amount is preferably 8% by mass to 30% by mass with respect to the first component, and the thickness of the Ni layer 3 is preferably 1 μm to 15 μm. Since the content of the glass that is the second component of the circuit portion 2a is 8% by mass to 30% by mass with respect to the first component, the circuit conductor 2 does not significantly increase the conduction resistance of the circuit conductor 2. Since the sintering behavior of this material can be brought close to the sintering behavior of the glass ceramics which is the material of the insulating substrate 1, defects such as voids are not only in the circuit conductor 2 but also between the circuit conductor 2 and the insulating substrate. Since the amount of the glass that is the second component of the joint portion 2b is less than 5% by mass with respect to the first component, the glass exposed on the surface of the joint portion 2b is sufficient while the wiring board 4 is reduced. Therefore, when the Ni layer 3 is formed by plating, the thickness of the thin layer is as small as 1 μm, and there are few defects such as pinholes, and the surface of the joint can be sufficiently covered. Further, since the thickness of the Ni layer 3 is 1 μm to 15 μm, when the lead pin 6 is joined by the active metal-containing Ag—Cu alloy brazing material 5, Ni diffused into the active metal-containing Ag—Cu alloy brazing material 5 is used. Since the amount is small, the thickness of the fragile alloy layer formed by diffusion of Ni can be reduced, and the wiring board 4 can be joined more firmly.

このような配線基板４におけるガラスセラミックスより成る絶縁基体１は、例えば以下のような従来周知のセラミックグリーンシート積層法を用いて製作することができる。すなわち、上記割合のガラス粉末とフィラー粉末に適当な有機バインダや溶剤、必要に応じて分散剤や可塑剤等を添加し、ボールミル法等の混合方法により混合して作製したスラリーをドクターブレード法やカレンダーロール法等の成形方法を採用してシート状に成形してセラミックグリーンシートを得て、このセラミックグリーンシートを上下に積層し、この積層体を１００〜８００℃の温度で加熱して脱バインダした後、８００〜１１００℃の温度で焼成することによって製作される。焼成は、回路導体２の第１の成分がＣｕである場合は窒素雰囲気中で行なわれ、Ａｇである場合は大気中で行なわれる。なお、窒素雰囲気の場合は、加湿することにより脱バインダ性を高めることが行なわれる。   The insulating base 1 made of glass ceramics in such a wiring board 4 can be manufactured using, for example, a conventionally known ceramic green sheet laminating method as described below. That is, a slurry prepared by adding a suitable organic binder or solvent to the glass powder and filler powder in the above ratio, and if necessary, a dispersing agent, a plasticizer, and the like, and mixing them by a mixing method such as a ball mill method or the like. A ceramic green sheet is obtained by forming a sheet by adopting a molding method such as a calender roll method, and the ceramic green sheet is laminated up and down, and the laminate is heated at a temperature of 100 to 800 ° C. to remove the binder. Then, it is manufactured by firing at a temperature of 800 to 1100 ° C. Firing is performed in a nitrogen atmosphere when the first component of the circuit conductor 2 is Cu, and is performed in the air when it is Ag. In the case of a nitrogen atmosphere, the binder removal property is improved by humidification.

このときの、回路導体２は、たとえば銅（Ｃｕ）・銀（Ａｇ）からなる。これらの金属粉末に適当な有機バインダや溶剤、必要に応じて分散剤等を添加混合し、ボールミル・三本ロールミル・プラネタリーミキサー等の混練手段により混練して得た金属ペーストを上記にセラミックグリーンシートに所定のパターンに印刷塗布し、これをセラミックグリーンシートの積層体とともに焼成することによって形成することができる。   The circuit conductor 2 at this time is made of, for example, copper (Cu) · silver (Ag). Add a suitable organic binder and solvent to these metal powders, if necessary, a dispersant, etc., and mix them with a kneading means such as a ball mill, a three-roll mill, or a planetary mixer. It can be formed by printing on a sheet in a predetermined pattern and firing it together with a laminate of ceramic green sheets.

次に、このセラミックグリーンシートに、導体材料の粉末をペースト化した導体ペーストをスクリーン印刷法やグラビア印刷法等により印刷するか、または所定パターン形状の金属箔を転写する等の方法を用いて、回路導体２を形成する。導体ペーストの導体材料としては、ガラスセラミックス焼結体に対しては、ＣｕまたはＡｇが好適に用いられる。   Next, on this ceramic green sheet, a conductor paste obtained by pasting a powder of a conductor material is printed by a screen printing method or a gravure printing method, or a method such as transferring a metal foil having a predetermined pattern shape, A circuit conductor 2 is formed. As the conductive material of the conductive paste, Cu or Ag is suitably used for the glass ceramic sintered body.

なお、この回路導体２には、絶縁基体１の上面と下面とにそれぞれ配置された導体パターン同士を絶縁基体１の内部で接続するためのビア導体やスルーホール導体等といった回路部２ａも含まれる。この回路部２ａは、例えば、パンチング加工等によりセラミックグリーンシートに形成した貫通孔に導体ペーストを充填することによって形成される。   The circuit conductor 2 also includes a circuit portion 2 a such as a via conductor or a through-hole conductor for connecting the conductor patterns respectively disposed on the upper surface and the lower surface of the insulating substrate 1 within the insulating substrate 1. . The circuit portion 2a is formed, for example, by filling a through hole formed in a ceramic green sheet with a conductive paste by punching or the like.

ここで、回路部２ａの導体ペーストには焼成時にセラミックとの密着を良くする為に導体成分のＣｕまたはＡｇを第１の成分とし、セラミックグリーンシートと同じガラス粉末を第２の成分として、第１の成分のＣｕまたはＡｇに対して８乃至３０質量％のガラス粉末が添加される。ガラスの含有量が８質量％未満だと回路部２ａ内では焼成時に回路導体の成分のＣｕまたはＡｇとグリーンシートの収縮挙動が合わずに、回路導体とグリーンシートとの剥離が生じる場合がある。また、ガラスの含有量が３０質量％を越えると回路導体の抵抗値が高くなり、配線基板としての機能を充分に発揮できなくなる。   Here, in the conductor paste of the circuit portion 2a, in order to improve adhesion with the ceramic during firing, the conductor component Cu or Ag is the first component, and the same glass powder as the ceramic green sheet is the second component. 8 to 30% by weight of glass powder is added to one component of Cu or Ag. If the glass content is less than 8% by mass, the shrinkage behavior of the circuit sheet component Cu or Ag and the green sheet does not match during firing in the circuit part 2a, and the circuit conductor and the green sheet may peel off. . On the other hand, if the glass content exceeds 30% by mass, the resistance value of the circuit conductor increases, and the function as a wiring board cannot be sufficiently exhibited.

更に本発明の配線基板によれば、貫通孔に導体ペーストを充填後に、導体の成分のＣｕまたはＡｇを第１の成分とし、セラミックグリーンシートと同じガラス粉末を第２の成分として、第１の成分のＣｕまたはＡｇに対して５質量％未満のガラス粉末が添加された導体ペーストを貫通孔の表縁側の一端面に充填したり、印刷することにより回路部２ｂとなる層が形成される。また、回路導体２は、主に絶縁基体１の表面に形成され、その一部が半導体素子８の電極を電気的に接続させるための電極７として機能する。   Furthermore, according to the wiring board of the present invention, after filling the through hole with the conductive paste, the conductor component Cu or Ag is used as the first component, and the same glass powder as the ceramic green sheet is used as the second component. A layer that becomes the circuit portion 2b is formed by filling or printing one end surface on the front edge side of the through hole with a conductive paste to which less than 5% by mass of glass powder is added relative to the component Cu or Ag. The circuit conductor 2 is mainly formed on the surface of the insulating base 1, and a part of the circuit conductor 2 functions as an electrode 7 for electrically connecting the electrodes of the semiconductor element 8.

次に、図２に断面図で示すように、回路部２ｂの露出する表面にＮｉ層３を形成するために、めっき法、蒸着法およびスパッタリング等によって１μｍ乃至１５μｍＮｉ層を形成する。Ｎｉ層３は、ＣｕやＡｇに対して密着性が良く、拡散しにくいためにバリア層として有効に機能する。   Next, as shown in a sectional view in FIG. 2, in order to form the Ni layer 3 on the exposed surface of the circuit portion 2b, a 1 μm to 15 μm Ni layer is formed by plating, vapor deposition, sputtering, or the like. The Ni layer 3 functions effectively as a barrier layer because it has good adhesion to Cu and Ag and is difficult to diffuse.

また、Ｎｉ層３の厚みが１μｍ未満の場合、回路導体２を形成する導体にガラス成分を含んでいるために、十分に回路導体をカバーできずにピンホール部などの欠陥が生じる場合がある。このため、リードピン６取付けの加熱処理が行なわれる場合、回路導体のＣｕまたはＡｇと活性金属含有Ａｇ−Ｃｕ合金ろう材（ろう材５）が互いに接する部分が生じ、この互いに接触した界面より回路導体のＣｕまたはＡｇが溶解されることにより回路導体内やさらに内部に位置する回路導体と接続された配線導体内にボイドが発生する場合がある。その結果、回路導体内で断線が生じる恐れがある。   Further, when the thickness of the Ni layer 3 is less than 1 μm, the conductor forming the circuit conductor 2 contains a glass component, so that the circuit conductor cannot be sufficiently covered and defects such as pinhole portions may occur. . For this reason, when the heat treatment for attaching the lead pin 6 is performed, a portion where Cu or Ag of the circuit conductor and the active metal-containing Ag—Cu alloy brazing material (brazing material 5) are in contact with each other is generated, and the circuit conductor is formed from the interface in contact with each other. When Cu or Ag is dissolved, voids may be generated in the circuit conductor or in the wiring conductor connected to the circuit conductor located further inside. As a result, disconnection may occur in the circuit conductor.

また、Ｎｉ層３を構成するＮｉはろう付けの際にろう材側へ拡散し、ろう材内で活性金属と合金層を形成する。この合金層の引っ張り等の外力に対する強度は脆弱である為に、ピンピッチが狭く、リードピン６とろう材５との接合面積が小さくなると外力により破壊され易くなる。Ｎｉ層３の厚みが厚いほどその傾向は大きくなり１５μｍを超える場合、比較的小さな外力でも容易にＮｉ層３が破壊されるやすくなるという問題点が発生する。   Ni constituting the Ni layer 3 diffuses to the brazing material side during brazing, and forms an alloy layer with the active metal in the brazing material. Since the strength of the alloy layer against an external force such as pulling is weak, if the pin pitch is narrow and the joint area between the lead pin 6 and the brazing material 5 is small, the alloy layer is easily broken by the external force. As the thickness of the Ni layer 3 increases, the tendency increases. When the thickness exceeds 15 μm, the Ni layer 3 is easily broken even with a relatively small external force.

Ｎｉ層３をめっき法で形成する際の一例を以下に示す。Ｎｉめっき層は、Ｐを４乃至１２質量％含有する無電解Ｎｉ−Ｐめっき層から成る。このようなＮｉめっき層は、まず、配線導体６および回路導体７が形成された絶縁基体１を界面活性剤と塩酸水溶液とから成る温度が２５乃至５０℃の酸性の洗浄液に１乃至５分間浸漬して、回路導体２の表面に露出する面を清浄し、次にこれを純水で洗浄した後、塩化パラジウム，水酸化カリウム，エチレンジアミンテトラアセティクアシッドから成る温度が２５乃至４０℃のパラジウム活性液中に１乃至５分間程度浸漬して、回路導体７の表面に露出する面にパラジウム触媒を付着させ、次にこれを純水で洗浄した後、硫酸ニッケル，クエン酸ナトリウム，酢酸ナトリウム，次亜リン酸ナトリウム，塩化アンモニウムから成る温度が５０乃至９０℃の無電解Ｎｉめっき液中に、２乃至６０分間浸漬することによって、回路導体２の表面に露出する面に被着される。   An example of forming the Ni layer 3 by a plating method is shown below. The Ni plating layer is composed of an electroless Ni—P plating layer containing 4 to 12% by mass of P. In such a Ni plating layer, first, the insulating substrate 1 on which the wiring conductor 6 and the circuit conductor 7 are formed is immersed in an acidic cleaning solution composed of a surfactant and an aqueous hydrochloric acid solution at a temperature of 25 to 50 ° C. for 1 to 5 minutes. Then, the surface exposed on the surface of the circuit conductor 2 is cleaned, and then this is washed with pure water, and then the palladium activity of palladium chloride, potassium hydroxide, ethylenediaminetetraacetic acid is 25 to 40 ° C. Immerse it in the solution for about 1 to 5 minutes to allow the palladium catalyst to adhere to the surface exposed on the surface of the circuit conductor 7, and then wash it with pure water, then nickel sulfate, sodium citrate, sodium acetate, The surface of the circuit conductor 2 is immersed in an electroless Ni plating solution composed of sodium phosphite and ammonium chloride at a temperature of 50 to 90 ° C. for 2 to 60 minutes. It is applied to the output faces.

そして、配線基板４の下面の回路導体２が絶縁基体１表面に露出した部位を含む領域に、活性金属含有Ａｇ−Ｃｕ合金ろう材を含む導体ペーストを、スクリーン印刷法やグラビア印刷法等により印刷し、リードピン６と、配線基板４の回路導体２の表面に露出する面とその面を含む絶縁基体１とを、活性金属含有Ａｇ−Ｃｕ合金ろう材からなるろう材を介してろう付けする。この活性金属含有Ａｇ−Ｃｕ合金ろう材は、ＢＡｇ−８（ＪＩＳ Ｚ−３２６１：７２質量％Ａｇ−２８質量％Ｃｕ）ろう材を始めとして、Ａｇが６０乃至８０質量％でＣｕが２０乃至４０質量％の組成から成るＡｇ−Ｃｕ合金ろう材に、活性金属であるＴｉ，ＺｒおよびＨｆのうち少なくとも１種を、金属または水素化物の状態で外添加で２乃至１０質量％添加したものが好適に用いられる。なお、外添加とはあらかじめ出来上がったＡｇ−Ｃｕ合金ろう材１００質量％に対して活性金属を別に添加することをいう。   Then, a conductor paste containing an active metal-containing Ag—Cu alloy brazing material is printed by a screen printing method, a gravure printing method, or the like in a region including a portion where the circuit conductor 2 on the lower surface of the wiring substrate 4 is exposed on the surface of the insulating substrate 1. Then, the lead pin 6, the surface exposed to the surface of the circuit conductor 2 of the wiring board 4, and the insulating base 1 including the surface are brazed via a brazing material made of an active metal-containing Ag-Cu alloy brazing material. This active metal-containing Ag-Cu alloy brazing material includes a BAg-8 (JIS Z-3261: 72 mass% Ag-28 mass% Cu) brazing material, Ag is 60 to 80 mass%, and Cu is 20 to 40 mass%. It is preferable that at least one of active metals Ti, Zr and Hf is added to Ag—Cu alloy brazing material having a composition of mass% in an external addition in the form of metal or hydride in an amount of 2 to 10 mass%. Used for. In addition, external addition means adding an active metal separately with respect to 100 mass% of Ag-Cu alloy brazing materials completed beforehand.

このろう材５を介してリードピン６を絶縁基体１に接合するには、活性金属含有Ａｇ−Ｃｕ合金ろう材の粉末に有機溶剤、樹脂バインダおよび溶剤（有機溶剤，水等）を合わせて５乃至１５質量％を外添加で混合して得たろう材ペーストを、回路導体２が露出した端面を含む絶縁基体１の表面に、スクリーン印刷法等によりリードピン１を立設する部位に対応した所定パターンで印刷し、これにリードピン６のヘッド部を載置して、真空中、中性雰囲気中または還元雰囲気中で活性金属含有Ａｇ−Ｃｕ合金ろう材の溶融温度に合わせた所定温度（例えば約８００℃）で加熱処理し、活性金属含有Ａｇ−Ｃｕ合金ろう材を溶融させて、配線導体４および絶縁基体１とリードピン６とをろう付け接合する。   In order to join the lead pin 6 to the insulating substrate 1 through the brazing material 5, the active metal-containing Ag—Cu alloy brazing powder is combined with an organic solvent, a resin binder, and a solvent (organic solvent, water, etc.) 5 to 5. A brazing material paste obtained by mixing 15% by mass with external addition is added to the surface of the insulating substrate 1 including the end face where the circuit conductor 2 is exposed, in a predetermined pattern corresponding to the portion where the lead pins 1 are erected by screen printing or the like. Printing is performed, and the head portion of the lead pin 6 is placed thereon, and a predetermined temperature (for example, about 800 ° C.) corresponding to the melting temperature of the active metal-containing Ag—Cu alloy brazing material in vacuum, neutral atmosphere, or reducing atmosphere. ), The active metal-containing Ag—Cu alloy brazing material is melted, and the wiring conductor 4 and the insulating substrate 1 are joined to the lead pin 6 by brazing.

このとき、活性金属含有Ａｇ−Ｃｕ合金ろう材の融点およびろう付け後の接合部の外観や反応層および合金層の厚み等を考慮して、ろう材５における活性金属の含有量、ボリューム（体積）、ブレージング最高到達温度（ブレージング最高到達温度とはろう材が溶融するための温度以上の所望の温度をいう。）、ろう材５の融点以上の温度の保持時間等を決める必要がある。また、加熱処理時にリードピン６に加重を掛けると、ろう材５がリードピン６のヘッド部にメニスカスをきれいに形成し、より強固にろう材５とリードピン６を接合できる。   At this time, considering the melting point of the active metal-containing Ag—Cu alloy brazing material, the appearance of the joint after brazing, the thickness of the reaction layer and the alloy layer, etc., the content, volume (volume) of the active metal in the brazing material 5 ), The brazing maximum temperature (the brazing maximum temperature is a desired temperature higher than the temperature at which the brazing material is melted), the holding time of the temperature higher than the melting point of the brazing material 5 and the like. Further, when a weight is applied to the lead pin 6 during the heat treatment, the brazing material 5 forms a meniscus cleanly at the head portion of the lead pin 6, and the brazing material 5 and the lead pin 6 can be joined more firmly.

その一例として、７２質量％Ａｇ−２８質量％ＣｕのいわゆるＢＡｇ−８と呼ばれるろう材に活性金属としてＴｉＨ２を３質量％添加したろう材を用いて、絶縁基体１の表面にろう付け後に直径０．９０ｍｍの接続パッドを形成する場合、ピン径が０．２０ｍｍ、ヘッド部の厚みが０．１５ｍｍ、ヘッド部の直径が０．４５ｍｍのネイルヘッド型（ネイルヘッド型とは、図１に示すようにリードピン６の片側の先端の型がリードピン６の径より大きい型をいう。）のリードピン６を絶縁基体１の所定部位に当接した状態で、真空炉中で最高温度７９５℃乃至８５０℃で５分乃至１時間保持すれば、高い接合強度を有する良好な接合状態が得られる。 As an example, a brazing material in which 3% by mass of TiH 2 is added as an active metal to a so-called BAg-8 brazing material of 72% by mass Ag-28% by mass Cu is used, and the diameter after brazing on the surface of the insulating substrate 1 When a 0.90 mm connection pad is formed, a nail head type having a pin diameter of 0.20 mm, a head portion thickness of 0.15 mm, and a head portion diameter of 0.45 mm (the nail head type is shown in FIG. The maximum temperature of 795 ° C. to 850 ° C. in a vacuum furnace in a state where the lead pin 6 of one end of the lead pin 6 is larger than the diameter of the lead pin 6 is in contact with a predetermined portion of the insulating substrate 1. For 5 minutes to 1 hour, a good bonding state having high bonding strength can be obtained.

なお、本発明の配線基板４に用いられるリードピン６の材質、ピン部の長さ、ヘッド部の厚み等は、外部電気回路のソケットの形状や接続方法等に応じて選択が可能である。例えば、半導体素子収納用パッケージに適用するリードピンであれば、Ｆｅ−Ｎｉ−Ｃｏ合金やＣｕ合金製のものが使用され、ピン部の長さとしては１乃至６ｍｍ程度の範囲のものが使用される。   The material of the lead pin 6 used in the wiring board 4 of the present invention, the length of the pin portion, the thickness of the head portion, and the like can be selected according to the shape of the socket of the external electric circuit, the connection method, and the like. For example, if it is a lead pin applied to a package for housing a semiconductor element, one made of Fe-Ni-Co alloy or Cu alloy is used, and the pin portion has a length in the range of about 1 to 6 mm. .

以上のようにしてリードピン６と絶縁基体１とを接合することにより、リードピン６がろう材５を介して回路導体２に接合され、回路導体２とリードピン６の導通抵抗の増大を抑制し、回路導体２とリードピン６が絶縁することを防止することが可能な配線基板４を得ることができる。   By joining the lead pin 6 and the insulating substrate 1 as described above, the lead pin 6 is joined to the circuit conductor 2 via the brazing material 5, and an increase in the conduction resistance between the circuit conductor 2 and the lead pin 6 is suppressed. A wiring substrate 4 that can prevent the conductor 2 and the lead pin 6 from being insulated can be obtained.

本発明の配線基板の実施例について以下に説明する。   Examples of the wiring board of the present invention will be described below.

まず、ガラス粉末として平均粒径が２μｍであるＳｉＯ２を用い、フィラー粉末として平均粒径が１乃至２μｍであるコーディライトを用い、質量比で４０：６０の割合で混合し、さらに適当な有機溶剤，溶媒を添加混合して泥漿状となし、これをドクターブレード法やカレンダーロール法によりシート状に成形してセラミックグリーンシート（セラミック生シート）を作製した。 First, SiO 2 having an average particle diameter of 2 μm is used as the glass powder, cordierite having an average particle diameter of 1 to 2 μm is used as the filler powder, and the mixture is mixed at a mass ratio of 40:60, and further suitable organic A solvent and a solvent were added and mixed to form a slurry, which was formed into a sheet by a doctor blade method or a calender roll method to produce a ceramic green sheet (ceramic green sheet).

次に、このセラミックグリーンシートにパンチング加工により貫通孔を形成し、表１に示すようにＣｕ粉末を第１の成分とし、第２の成分として平均粒径が２μｍであるＳｉＯ２のガラス粉末を第１の成分のＣｕ粉末に対して５乃至３４質量％とを混合してペースト化した導体ペーストを充填することによって回路導体（回路導体となる導体ペースト層）を形成した。

Figure 2007294601
Next, through holes are formed in the ceramic green sheet by punching, and as shown in Table 1, Cu powder is the first component, and SiO 2 glass powder having an average particle diameter of 2 μm is used as the second component. A circuit conductor (conductor paste layer to be a circuit conductor) was formed by filling a paste of conductor paste mixed with 5 to 34% by mass with respect to the first component Cu powder.
Figure 2007294601

また、最表層のリードピンを接合する部分のグリーンシートには更に、Ｃｕ粉末を第１の成分とし、第２の成分として平均粒径が２μｍであるＳｉＯ２のガラス粉末を第１の成分のＣｕ粉末に対して０乃至７質量％とをペースト化した導体ペーストをスクリーン印刷法より回路導体上に貫通孔径と同じサイズで印刷して接合部２ｂを形成したサンプルを作成した。 Further, the green sheet of the portion where the lead pin of the outermost layer is joined further contains Cu powder as the first component, and as the second component, SiO 2 glass powder having an average particle diameter of 2 μm is used as the first component Cu. A conductor paste in which 0 to 7% by mass of the powder was pasted was printed on the circuit conductor with the same size as the through-hole diameter by screen printing to prepare a sample in which the joint portion 2b was formed.

次に、これらの回路導体を形成したセラミックグリーンシートを複数枚積層し、９５０℃の温度で焼成することによって、回路導体７にガラス粉末を５乃至３４質量％含み、かつ回路導体７の直上にガラス粉末を０乃至７質量％含む接合部２ｂを有するガラスセラミックスから成る絶縁基体を製作した。   Next, a plurality of ceramic green sheets on which these circuit conductors are formed are stacked and fired at a temperature of 950 ° C., so that the circuit conductor 7 contains 5 to 34% by mass of glass powder and is directly above the circuit conductor 7. An insulating base made of glass ceramics having a joint 2b containing 0 to 7% by mass of glass powder was manufactured.

焼成後の絶縁基体において、貫通孔部の凹みや凸が見られたサンプルは、リードピン付けを行う際の活性ろう材の印刷工程において貫通孔部の凹みによるろう材の気泡の巻き込みや、貫通孔部の凸によるろう材の欠けが出やすく、外観上の歩留まりを低下させるために実使用上問題は無いが表１中の外観に△で示す。   Samples with dents and protrusions in the through-holes in the insulating substrate after firing were used for the entrapment of bubbles in the brazing filler metal due to the dents in the through-holes in the printing process of the active brazing material when lead pins were attached. Brazing of the brazing material is likely to occur due to the protrusion of the portion, and there is no problem in actual use in order to reduce the yield in appearance, but the appearance in Table 1 is indicated by Δ.

また、焼成後に回路導体部の導通抵抗を電気テスターによりチェックを行い、導通抵抗が５００ｍΩ未満の物は使用上問題無し（表１中の電気チェックに○で示す）、５００乃至１０００ｍΩの物は使用上問題無し（表１中の電気チェックに△で示す）、１０００ｍΩを越えるもの使用に耐えないとした（表１中の電気チェックに×で示す）。   In addition, the conductive resistance of the circuit conductor part is checked with an electric tester after firing, and those having a conductive resistance of less than 500 mΩ have no problem in use (indicated by a circle in the electric check in Table 1), and those having a resistance of 500 to 1000 mΩ are used. There was no problem above (indicated by Δ in the electrical check in Table 1), and it could not withstand use exceeding 1000 mΩ (indicated by × in the electrical check in Table 1).

表１より、回路導体中のガラスの含有量が７質量％以下のサンプルにおいて貫通孔部に凹みが見られた。また、３３質量％以上のサンプルにおいて貫通孔部に凸が見られた。また、３１質量％以上のサンプルにおいて電気チェックで５００乃至１０００ｍΩの物が見られた。   From Table 1, the dent was seen by the through-hole part in the sample whose content of the glass in a circuit conductor is 7 mass% or less. Further, in the sample of 33% by mass or more, the through hole portion was convex. In addition, in the sample of 31% by mass or more, an electric check showed 500 to 1000 mΩ.

次に、表２に示すように回路部２ａのガラスの含有量が１５質量％、接合部２ｂのガラスの含有量が０乃至７質量％の絶縁基体を用いて、回路導体７の絶縁基体５の表面に露出する面にめっき法によってＮｉ層３の厚みが０．５乃至１７μｍの評価用サンプルを製作した。

Figure 2007294601
Next, as shown in Table 2, an insulating substrate 5 of the circuit conductor 7 is formed using an insulating substrate having a glass content of the circuit portion 2a of 15% by mass and a glass content of the bonding portion 2b of 0 to 7% by mass. An evaluation sample having a thickness of the Ni layer 3 of 0.5 to 17 μm was manufactured by plating on the surface exposed on the surface.
Figure 2007294601

次に、絶縁基体１の表面に、Ａｇ７２質量％とＣｕ２８質量％とから成るＡｇ−Ｃｕ合金ろう材（ＢＡｇ−８）に活性金属としてのＴｉＨ２を３質量％および樹脂バインダを１０質量％の割合で外添加した活性金属含有Ａｇ−Ｃｕ合金ろう材のペーストを、リードピン１と絶縁基体５との接合用のろう材２としてスクリーン印刷し、ろう付け後の直径が０．９０ｍｍとなるろう材５を形成した。 Next, on the surface of the insulating base 1, 3% by mass of TiH 2 as an active metal and 10% by mass of a resin binder are added to an Ag—Cu alloy brazing material (BAg-8) composed of 72% by mass of Ag and 28% by mass of Cu. The paste of the active metal-containing Ag—Cu alloy brazing material added externally at a ratio is screen-printed as a brazing material 2 for joining the lead pin 1 and the insulating base 5 so that the diameter after brazing becomes 0.90 mm. 5 was formed.

次に、このろう材５を介して、リードピン６の全長が２．０ｍｍ、ピン部の直径が０．２０ｍｍ、ヘッド部１ａの厚みが０．１５ｍｍ、ヘッド部１ａの直径が０.４５ｍｍであるＦｅ−Ｎｉ−Ｃｏ合金製のリードピン６を、真空炉中で最高温度８００℃を１５分保持することにより接合した。   Next, the total length of the lead pin 6 is 2.0 mm, the diameter of the pin portion is 0.20 mm, the thickness of the head portion 1 a is 0.15 mm, and the diameter of the head portion 1 a is 0.45 mm through the brazing material 5. The lead pin 6 made of Fe—Ni—Co alloy was joined by maintaining the maximum temperature of 800 ° C. for 15 minutes in a vacuum furnace.

以上のようにして、リードピン６がろう材５を介して配線基板４に接合され、回路導体２とリードピン６の導通抵抗の増大を抑制し、回路導体２とリードピン６とが絶縁することを防止することが可能なリードピン付き配線基板を得た。   As described above, the lead pin 6 is joined to the wiring board 4 via the brazing material 5 to suppress an increase in the conduction resistance between the circuit conductor 2 and the lead pin 6 and to prevent the circuit conductor 2 and the lead pin 6 from being insulated. A wiring board with lead pins that can be obtained was obtained.

これらのリードピン付き配線基板の回路導体部の導通抵抗を電気テスターにより測定し、回路導体の電気チェックを行った。また、電気チェック後に回路導体部分の断面観察を行う事で回路導体内へのＡｇ−Ｃｕ合金の侵入具合を確認した。   The electrical resistance of the circuit conductor was measured by measuring the conduction resistance of the circuit conductor portion of these wiring boards with lead pins using an electric tester. Moreover, the penetration | invasion state of the Ag-Cu alloy into a circuit conductor was confirmed by observing the cross section of a circuit conductor part after an electrical check.

なお、リードピン接合後の電気チェックにおいて、導通抵抗が５００ｍΩ未満の物は使用上問題無し（表２中の電気チェックに○で示す）、５００乃至１０００ｍΩの物は実使用上問題無し（表２中の電気チェックに△で示す）、１０００ｍΩを越えるもの使用に耐えないとした（表２中の電気チェックに×で示す）。   In addition, in the electrical check after joining the lead pins, there is no problem in use if the conduction resistance is less than 500 mΩ (indicated by a circle in the electrical check in Table 2), and there is no problem in actual use in the case of 500 to 1000 mΩ. It is assumed that it cannot endure the use exceeding 1000 mΩ (indicated by x in the electrical check in Table 2).

本発明の配線基板において接合部２ｂのガラスの含有量がを５質量％未満であり、且つＮｉ層の厚みが１μｍのサンプルは電気チェックによる導通抵抗の大きい部分は見られなかったが、接合部２ｂのガラスの含有量が５質量％を越えるサンプルとＮｉ層３の厚みが０．５μｍのサンプルにおいて、実使用上問題無いレベルであるが電気チェックによる導通抵抗の大きい部分がみられた。また、電気チェックによる導通抵抗の大きい回路導体部の断面を観察すると回路部２ａにＡｇ−Ｃｕ合金が見られた。また、電気チェックによる導通抵抗の大きい部分では回路部２ａにボイドが生じている場所もあった。   In the wiring board of the present invention, the portion having a large conductive resistance by electrical check was not found in the sample in which the glass content of the joint portion 2b was less than 5% by mass and the thickness of the Ni layer was 1 μm. In the sample in which the content of the glass of 2b exceeds 5 mass% and the sample in which the thickness of the Ni layer 3 is 0.5 μm, a portion having a large conduction resistance by an electrical check was found although there was no problem in practical use. Moreover, when the cross section of the circuit conductor part with a large conduction resistance by an electrical check was observed, an Ag—Cu alloy was found in the circuit part 2a. Further, there is a place where a void is generated in the circuit portion 2a in a portion where the conduction resistance is large by the electrical check.

さらに、リードピンの接合強度（４５°引っ張り強度）を、４５°上方に１０ｍｍ／分の速度でリードピンを引っ張る引っ張り試験によりリードピン５０ピンを引っ張ることによって測定し、破壊強度と破壊モードを評価した。なお、引張り試験の判断基準として、破壊モードのピン切れ率が１００％であれば問題ないとした（表中に○印で示す）。また、破壊モードが磁器破壊やろう材内の破壊であっても破壊強度が１０Ｎ以上有れば実用上問題ないとした（表中に△印で示す）。   Furthermore, the bonding strength (45 ° tensile strength) of the lead pins was measured by pulling 50 lead pins by a pull test in which the lead pins were pulled upward at 45 ° at a speed of 10 mm / min, and the breaking strength and the breaking mode were evaluated. As a criterion for the tensile test, there was no problem if the pin breakage rate in the fracture mode was 100% (indicated by a circle in the table). Further, even if the fracture mode is a ceramic fracture or a fracture in the brazing material, there is no practical problem if the fracture strength is 10 N or more (indicated by Δ in the table).

接合部２ｂのガラスの含有量によらず、Ｎｉ層３の厚みが１５μｍ未満のサンプルはリードピンで破壊し、充分な強度であったが、接合部２ｂのガラスの含有量によらず、Ｎｉ層３の厚みが１５μｍを越えたサンプルにおいて、実使用上問題ない破壊強度であるが、ろう材内での破壊モードが見られた。   Regardless of the glass content of the joint 2b, the sample with the Ni layer 3 having a thickness of less than 15 μm was broken with a lead pin and had sufficient strength, but the Ni layer was not affected by the glass content of the joint 2b. In the sample in which the thickness of 3 exceeded 15 μm, the fracture mode was not problematic in practical use, but a fracture mode in the brazing material was observed.

なお、本発明は以上の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を施すことは何ら差し支えない。例えば、上記の実施の形態では、本発明の配線基板を半導体素子収納用パッケージに適用した例を示したが、混成集積回路基板等の他の用途に適用してもよい。   Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention. For example, in the above-described embodiment, an example in which the wiring board of the present invention is applied to a package for housing semiconductor elements has been described. However, it may be applied to other uses such as a hybrid integrated circuit board.

本発明の配線基板の実施の形態の例を示す断面図である。It is sectional drawing which shows the example of embodiment of the wiring board of this invention. 図１に示す配線基板の要部拡大断面図である。It is a principal part expanded sectional view of the wiring board shown in FIG. 図１に示す配線基板の要部拡大断面図である。It is a principal part expanded sectional view of the wiring board shown in FIG.

符号の説明Explanation of symbols

１・・・絶縁基体
２・・・回路導体
２ａ・・・回路部
２ｂ・・・接合部
３・・・Ｎｉ層
４・・・配線基板
５・・・ろう材
６・・・リードピン
７・・・電極
８・・・半導体素子
９・・・金属配線 DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 2 ... Circuit conductor 2a ... Circuit part 2b ... Joint part 3 ... Ni layer 4 ... Wiring board 5 ... Brazing material 6 ... Lead pin 7 ... -Electrode 8 ... Semiconductor element 9 ... Metal wiring

Claims (2)

ガラスセラミックスから成る絶縁基体と、該絶縁基体に形成された回路導体とを有し、該回路導体に、Ｔｉ，ＺｒおよびＨｆのうちの少なくとも一種を含むＡｇ−Ｃｕ合金ろう材を介してリードピンが接合される配線基板であって、前記回路導体は、第１の成分であるＣｕまたはＡｇと第２の成分であるガラスとを含むとともに、回路部と、前記回路導体における前記リードピンが接続される側に形成される接合部とからなり、該接合部におけるガラスの含有量が前記回路部におけるガラスの含有量に比較して少なく、且つ前記接合部の表面にＮｉ層が形成されていることを特徴とする配線基板。 A lead pin having an insulating base made of glass ceramics and a circuit conductor formed on the insulating base, and an Ag—Cu alloy brazing material containing at least one of Ti, Zr and Hf. A wiring board to be joined, wherein the circuit conductor includes Cu or Ag as a first component and glass as a second component, and a circuit portion and the lead pin in the circuit conductor are connected to each other. The glass portion in the joint portion is less than the glass content in the circuit portion, and a Ni layer is formed on the surface of the joint portion. A characteristic wiring board. 前記回路部における前記第２の成分の含有量が前記第１の成分に対して８質量％乃至３０質量％、前記接合部における前記第２の成分の含有量が前記第１の成分に対して５質量％未満であり、且つ前記Ｎｉ層の厚みが１μｍ乃至１５μｍであることを特徴とする請求項１に記載の配線基板。 The content of the second component in the circuit part is 8% by mass to 30% by mass with respect to the first component, and the content of the second component in the joint part is with respect to the first component. The wiring board according to claim 1, wherein the wiring board is less than 5% by mass and the thickness of the Ni layer is 1 μm to 15 μm.
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WO2020138209A1 (en) * 2018-12-26 2020-07-02 京セラ株式会社 Wiring base, electronic component housing package, and electronic device

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Publication number Priority date Publication date Assignee Title
WO2013081110A1 (en) * 2011-11-30 2013-06-06 京セラ株式会社 Ceramic structure, ceramic heater, and glow plug provided with same
JPWO2013081110A1 (en) * 2011-11-30 2015-04-27 京セラ株式会社 Ceramic structure, ceramic heater and glow plug provided with the same
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KR20210027447A (en) * 2018-12-26 2021-03-10 교세라 가부시키가이샤 Package for storing wiring body and electronic parts, and electronic devices
JPWO2020138209A1 (en) * 2018-12-26 2021-09-09 京セラ株式会社 Wiring substrates, electronic component storage packages and electronic devices
JP7027578B2 (en) 2018-12-26 2022-03-01 京セラ株式会社 Wiring boards, electronic component storage packages and electronic devices
KR102463392B1 (en) 2018-12-26 2022-11-04 교세라 가부시키가이샤 Wiring body, electronic component storage package and electronic device

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