JP2007277578A - Die attach paste and semiconductor device - Google Patents

Die attach paste and semiconductor device Download PDF

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Publication number
JP2007277578A
JP2007277578A JP2007178615A JP2007178615A JP2007277578A JP 2007277578 A JP2007277578 A JP 2007277578A JP 2007178615 A JP2007178615 A JP 2007178615A JP 2007178615 A JP2007178615 A JP 2007178615A JP 2007277578 A JP2007277578 A JP 2007277578A
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resin
crosslinked
paste
semiconductor
organic resin
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JP5061760B2 (en
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Nobuki Tanaka
伸樹 田中
Keiichiro Saito
敬一郎 斎藤
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

<P>PROBLEM TO BE SOLVED: To provide a die attach paste for insulation semiconductor having excellent reliability and provide semiconductor device having excellent reliability in solder crack resistance and the like. <P>SOLUTION: The resin paste for insulation semiconductor includes (A) a thermosetting resin and (B) an organic resin particles as a filler, and (B) the organic resin particle is a polyorganosylsesquioxane having the three-dimensionally crosslinked siloxane structure and/or a silicone rubber fine particles having the structure crosslinking the straight chain dimethyl polysiloxane, and/or a silicone rubber fine particles having the structure formed by crosslinking straight chain dimethyl polysiloxane crosslinked structure, and these fine particles are preferably coated with polyorganosylsesquioxane-cured fine particle powder having the structure formed by crosslinking siloxane bonds in the three dimensional network. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、ＩＣ、ＬＳＩ等の半導体素子を金属フレーム、有機基板に接着する絶縁性半導体用樹脂ペーストに関するものである。   The present invention relates to an insulating semiconductor resin paste for bonding a semiconductor element such as an IC or LSI to a metal frame or an organic substrate.

従来、ＩＣ等の半導体素子を金属フレーム、有機基板に接着する方法として半導体用樹脂ペーストが一般的に使用されている。近年、環境対応の一環として半導体装置を基板に搭載する際に使用する半田から鉛を除去撤廃するために半田リフロー温度を従来の２２０〜２４５℃から２６０〜２７０℃にする必要があり、半導体用樹脂ペーストには半田リフロー温度の上昇に伴い発生する熱応力の増加に対する耐性をより一層求められるようになってきている。   Conventionally, a semiconductor resin paste is generally used as a method for bonding a semiconductor element such as an IC to a metal frame or an organic substrate. In recent years, it has been necessary to change the solder reflow temperature from 220 to 245 ° C. to 260 to 270 ° C. in order to remove and eliminate lead from solder used when mounting a semiconductor device on a substrate as part of environmental measures. Resin pastes are increasingly required to withstand the increase in thermal stress that occurs with increasing solder reflow temperature.

更に大型半導体素子に対応するため弾性率を小さくして低応力性を重視したダイアッタチペーストの場合、高温での接着力が十分でなく２６０〜２７０℃といった高温での半田リフロー時に剥離が発生し、場合によっては半導体素子のクラックに進展し信頼性の点でも不満足なものであった。
特開平０７−１７６５４８号公報 Furthermore, in the case of a diattach paste that reduces the elastic modulus and emphasizes low stress in order to cope with large semiconductor elements, the adhesive strength at high temperature is not sufficient and peeling occurs at the time of solder reflow at a high temperature of 260 to 270 ° C. In some cases, however, the semiconductor device has progressed to cracks in the semiconductor element, which is unsatisfactory in terms of reliability.
JP 07-176548 A

本発明は、信頼性に優れた絶縁性半導体用ダイアタッチペースト及び耐半田クラック性等の信頼性に優れた半導体装置を提供することである。   An object of the present invention is to provide a semiconductor device having excellent reliability such as a die attach paste for an insulating semiconductor excellent in reliability and solder crack resistance.

本発明は、
［１］（Ａ）熱硬化性樹脂組成物と（Ｂ）有機樹脂粒子とを含むことを特徴とする絶縁性半導体用樹脂ペースト、
［２］（Ｂ）有機樹脂粒子がシロキサン結合を三次元網目状に架橋した構造を持つポリオルガノシルセスキオキサン硬化物粉末及び／又は直鎖状のジメチルポリシロキサンを架橋した構造を持つシリコーンゴムの微粉末及び／又は直鎖状のジメチルポリシロキサンを架橋した構造を持つシリコーンゴムの微粉末の表面をシロキサン結合を三次元網目状に架橋した構造を持つポリオルガノシルセスキオキサン硬化物粉末で被覆した微粉末である［１］項記載の絶縁性半導体樹脂ペースト、
［３］（Ｂ）有機樹脂粒子が、平均粒径が０．５〜１５μｍで且つ最大粒径が５０μｍ以下である［２］項記載の絶縁性半導体樹脂ペースト、
［４］ ［１］［２］又は［３］項記載の半導体樹脂ペーストを用いて製作されてなる半
導体装置である。 The present invention
[1] An insulating semiconductor resin paste comprising (A) a thermosetting resin composition and (B) organic resin particles,
[2] (B) Silicone rubber having a structure in which organic resin particles have a structure in which a siloxane bond is crosslinked in a three-dimensional network and / or a polyorganosilsesquioxane cured powder and / or a linear dimethylpolysiloxane is crosslinked. A polyorganosilsesquioxane cured powder having a structure in which the fine powder of silicone rubber and / or the fine powder of silicone rubber having a structure in which linear dimethylpolysiloxane is crosslinked is crosslinked in a three-dimensional network structure with a siloxane bond. Insulating semiconductor resin paste according to item [1], which is a coated fine powder,
[3] (B) Insulating semiconductor resin paste according to item [2], wherein the organic resin particles have an average particle size of 0.5 to 15 μm and a maximum particle size of 50 μm or less.
[4] A semiconductor device manufactured using the semiconductor resin paste according to [1] [2] or [3].

本発明のダイアタッチペーストは、信頼性に優れた絶縁性半導体用ダイアタッチペーストであり、その結果耐半田クラック性等の信頼性に優れた半導体装置を得ることができる。   The die attach paste of the present invention is an insulating semiconductor die attach paste excellent in reliability, and as a result, a semiconductor device excellent in reliability such as solder crack resistance can be obtained.

本発明で用いられる有機樹脂粒子は、無機粒子に比べて軟らかく、樹脂への分散性に優れるという特徴がある。   The organic resin particles used in the present invention are characterized by being softer than inorganic particles and having excellent dispersibility in the resin.

本発明に用いる熱硬化性樹脂組成物（Ａ）は、熱硬化性樹脂、硬化剤、硬化促進剤等からなる一般的な熱硬化性樹脂組成物であり、特に限定されるものではないがペーストを形成する材料であることから室温で液状であることが望ましい。   The thermosetting resin composition (A) used in the present invention is a general thermosetting resin composition comprising a thermosetting resin, a curing agent, a curing accelerator and the like, and is not particularly limited, but a paste. It is desirable that the material is liquid at room temperature.

本発明に望ましく用いる液状の樹脂としては、例えば、液状のシアネート樹脂、液状エポキシ樹脂、ラジカル重合性の各種アクリル樹脂、アリール基を有するトリアリールイソシアヌレートなどが挙げられ、液状エポキシ樹脂としてはビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＥ型エポキシ樹脂、脂環式エポキシ樹脂、脂肪族エポキシ樹脂、グリシジルアミン型の液状エポキシ樹脂などが挙げられる。   Examples of the liquid resin desirably used in the present invention include liquid cyanate resin, liquid epoxy resin, various radically polymerizable acrylic resins, triaryl isocyanurate having an aryl group, and the liquid epoxy resin includes bisphenol A. Type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin, glycidylamine type liquid epoxy resin, and the like.

シアネート樹脂の硬化触媒としては、例えば、銅アセチルアセトナート、亜鉛アセチルアセトナート等の金属錯体が挙げられる。エポキシ樹脂の硬化剤としては、例えば、脂肪族アミン、芳香族アミン、ジシアンジアミド、ジカルボン酸ジヒドラジド化合物、フェノール樹脂等が例として挙げられる。ジヒドラジド化合物の例としては、アジピン酸ジヒドラジド、ドデカン酸ジヒドラジド、イソフタル酸ジヒドラジド、ｐ−オキシ安息香酸ジヒドラジド等のカルボン酸ジヒドラジドなどが挙げられる。   Examples of the curing catalyst for the cyanate resin include metal complexes such as copper acetylacetonate and zinc acetylacetonate. Examples of epoxy resin curing agents include aliphatic amines, aromatic amines, dicyandiamide, dicarboxylic acid dihydrazide compounds, and phenol resins. Examples of the dihydrazide compounds include carboxylic acid dihydrazides such as adipic acid dihydrazide, dodecanoic acid dihydrazide, isophthalic acid dihydrazide, and p-oxybenzoic acid dihydrazide.

硬化促進剤兼硬化剤としては各種のイミダゾール化合物があり、その例としては、２−メチルイミダゾール，２−エチルイミダゾール，２−フェニルイミダゾール，２−フェニル−４−メチルイミダゾール，２−フェニル−４−メチル−５−ヒドロキシメチルイミダゾール，２−フェニル−４，５−ジヒドロキシメチルイミダゾール，２−Ｃ11Ｈ23−イミダゾール等の一般的なイミダゾールやトリアジンやイソシアヌル酸を付加し、保存安定性を付与した２，４−ジアミノ−６−｛２−メチルイミダゾール−（１）｝−エチル−Ｓ−トリアジン、またそのイソシアネート付加物等があり、これらは何れも１種類あるいは複数種と併用して使うことが可能である。 Examples of the curing accelerator / curing agent include various imidazole compounds, such as 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and 2-phenyl-4-. methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-dihydroxy methyl imidazole, 2-C 11 H 23 - adds a generic imidazole or triazine and isocyanuric acid such as imidazole, to impart storage stability 2 , 4-Diamino-6- {2-methylimidazole- (1)}-ethyl-S-triazine, and its isocyanate adduct, etc., all of which can be used in combination with one or more. It is.

本発明においては室温で固体の熱硬化性樹脂成分を特性低下が起きない程度に混合して用いることも充分可能である。例えば、ビスフェノールＡ、ビスフェノールＦ、フェノールノボラック、クレゾールノボラック類とエピクロルヒドリンとの反応により得られるポリグリシジルエーテル、ブタンジオールジグリシジルエーテル、ネオペンチルグリコールジグリシジルエーテル等の脂肪族エポキシ、ジグリシジルヒダントイン等の複素環式エポキシ、ビニルシクロヘキセンジオキサイド、ジシクロペンタジエンジオキサイド、アリサイクリックジエポキシーアジペイトのような脂環式エポキシがあり、これらの内の１種類あるいは複数種と併用可能である。   In the present invention, it is also possible to mix and use a thermosetting resin component that is solid at room temperature to such an extent that characteristic deterioration does not occur. For example, aliphatic epoxies such as polyglycidyl ether, butanediol diglycidyl ether, neopentyl glycol diglycidyl ether obtained by the reaction of bisphenol A, bisphenol F, phenol novolak, cresol novolaks and epichlorohydrin, complex such as diglycidyl hydantoin There are alicyclic epoxies such as cyclic epoxy, vinylcyclohexene dioxide, dicyclopentadiene dioxide, alicyclic diepoxy adipate, and one or more of these can be used in combination.

本発明に用いる（Ｂ）有機樹脂粒子には、例えば、シリコーン樹脂、フェノール樹脂、ポリテトラフロロエチレン等のフッ素樹脂、ポリメチルメタクリレート等のアクリル樹脂、ベンゾグアナミンやメラミンとホルムアルデヒドとの架橋物等が挙げられる。さらに好ましくは有機樹脂粒子がシロキサン結合を三次元網目状に架橋した構造を持つポリオルガノシルセスキオキサン硬化物粉末又は／及び直鎖状のジメチルポリシロキサンを架橋した構造を持つシリコーンゴムの微粉末又は／及び直鎖状のジメチルポリシロキサンを架橋した構造を持つシリコーンゴムの微粉末の表面をシロキサン結合を三次元網目状に架橋した構造を持つポリオルガノシルセスキオキサン硬化物粉末で被覆した微粉末である。本発明に用いる（Ｂ）有機樹脂粒子の形状としてはフレーク状、鱗片状、樹脂状や球状等が用いられる。必要とするペーストの粘度により、使用する粒径は異なるが、通常平均粒径は０．５〜１５μｍ、最大粒径は５０μｍ程度のものが好ましい。平均粒径が０．５μｍ未満だと粘度が高くなり、１５μｍを越えると塗布又は硬化時に樹脂分が流出するのでブリードが発生するため好ましくない。最大粒径が５０μｍを越えるとディスペンサーでペーストを塗布するときに、ニードルの出口を塞ぎ長時間の連続使用ができない。又比較的粗い
有機樹脂粒子と細かい有機樹脂粒子とを混合して用いることもでき、種類、形状についても各種のものを適宜混合してもよい。尚、本発明に用いる（Ｂ）有機樹脂粒子は、予め表面をアルコキシシラン、アシロキシシラン、シラザン、オルガノアミノシラン等のシランカップリング材等で処理したものを用いてもよい。本発明の半導体用樹脂ペーストは、（Ａ）、（Ｂ）成分、及びその他の添加剤等を予備混合し、ロール等を用いて混練した後、真空下脱泡する等の製造方法で得られる。半導体装置の製造方法は公知の方法を用いることができる。以下実施例を用いて本発明を具体的に説明する。配合割合は重量部で示す。 Examples of the (B) organic resin particles used in the present invention include silicone resins, phenol resins, fluorine resins such as polytetrafluoroethylene, acrylic resins such as polymethyl methacrylate, benzoguanamine, cross-linked products of melamine and formaldehyde, and the like. It is done. More preferably, a cured product of polyorganosilsesquioxane having a structure in which organic resin particles are crosslinked with siloxane bonds in a three-dimensional network or / and fine powder of silicone rubber having a structure in which linear dimethylpolysiloxane is crosslinked. Or / and the surface of a fine powder of silicone rubber having a structure in which linear dimethylpolysiloxane is crosslinked is coated with a polyorganosilsesquioxane cured powder having a structure in which siloxane bonds are crosslinked in a three-dimensional network. It is a powder. As the shape of the organic resin particles (B) used in the present invention, flakes, scales, resins, spheres and the like are used. Although the particle size to be used varies depending on the required viscosity of the paste, it is usually preferable that the average particle size is 0.5 to 15 μm and the maximum particle size is about 50 μm. If the average particle size is less than 0.5 μm, the viscosity will be high, and if it exceeds 15 μm, the resin will flow out during coating or curing, causing bleeding, which is not preferable. When the maximum particle size exceeds 50 μm, when applying the paste with a dispenser, the needle outlet is blocked and continuous use for a long time cannot be performed. Also, relatively coarse organic resin particles and fine organic resin particles can be mixed and used, and various kinds of shapes and shapes may be appropriately mixed. The (B) organic resin particles used in the present invention may be those obtained by previously treating the surface with a silane coupling material such as alkoxysilane, acyloxysilane, silazane, organoaminosilane, or the like. The semiconductor resin paste of the present invention can be obtained by a production method such as premixing the components (A) and (B) and other additives, kneading using a roll or the like, and degassing under vacuum. . A known method can be used as a method of manufacturing the semiconductor device. The present invention will be specifically described below with reference to examples. The blending ratio is expressed in parts by weight.

実施例１〜３、比較例１〜２成分（Ａ）として、ビスフェノールＡとエピクロルヒドリンとの反応により得られるジグリシジルビスフェノールＡ（エポキシ当量１８０、室温で液体、以下ビスＡエポキシ）、クレジルグリシジルエーテル（エポキシ当量１８５、以下ＣＧＥ）、フェノールノボラック樹脂（水酸基当量１０４、軟化点８５℃、以下ＰＮ）、２−フェニル−４，５−ジヒドロキシメチルイミダゾール（四国化成工業（株）製、キュアゾール２ＰＨＺ）、グリシジル基を有するシランカップリング剤（信越化学工業（株）製、ＫＢＭ−４０３Ｅ）、成分（Ｂ）として平均粒径２μｍ、最大粒径４μｍのシロキサン結合を三次元網目状に架橋した構造を持つポリオルガノシルセスキオキサン硬化物粉末（以下有機樹脂粒子Ａ）、平均粒径５μｍ、最大粒径１０μｍの直鎖状のジメチルポリシロキサンを架橋した構造を持つシリコーンゴムの微粉末（以下有機樹脂粒子Ｂ）、平均粒径３μｍ、最大粒径１５μｍの破砕シリカ粉末（以下無機粒子Ａ）、平均粒径１．５μｍ、最大粒径７μｍの球状シリカ粉末（以下無機粒子Ｂ）を表１のように配合し、３本ロールを用いて混練し、脱泡後ペーストを得た。得られたペーストを以下の方法により評価した。評価結果を表１に示す。   Examples 1-3, Comparative Examples 1-2 As component (A), diglycidyl bisphenol A (epoxy equivalent 180, liquid at room temperature, hereinafter bis A epoxy) obtained by reaction of bisphenol A and epichlorohydrin, cresyl glycidyl ether (Epoxy equivalent 185, hereinafter CGE), phenol novolak resin (hydroxyl equivalent 104, softening point 85 ° C., hereinafter PN), 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., Curazole 2PHZ), A silane coupling agent having a glycidyl group (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403E) has a structure in which siloxane bonds having an average particle size of 2 μm and a maximum particle size of 4 μm are crosslinked in a three-dimensional network as the component (B). Polyorganosilsesquioxane cured powder (hereinafter referred to as organic resin particles A), average particle Silicone rubber fine powder (hereinafter referred to as organic resin particle B) having a structure in which linear dimethylpolysiloxane having a diameter of 5 μm and a maximum particle size of 10 μm is cross-linked, crushed silica powder having an average particle size of 3 μm and a maximum particle size of 15 μm (hereinafter inorganic) Particles A), spherical silica powder (hereinafter referred to as inorganic particles B) having an average particle diameter of 1.5 μm and a maximum particle diameter of 7 μm are blended as shown in Table 1, and kneaded using three rolls to obtain a paste after defoaming. . The obtained paste was evaluated by the following method. The evaluation results are shown in Table 1.

評価方法
・粘度： E型粘度計（３°コーン）を用い２５℃ ２．５ｒｐｍでの値を測定した。
・弾性率：１０×１５０×０．１ｍｍの試験片を作成し（硬化条件１５０℃、１５分）、引っ張り試験により加重−変位曲線を測定しその初期勾配より弾性率を求めた（測定長：１００ｍｍ、試験速度：１ｍｍ／分、測定温度：２５℃）。
・耐半田クラック性：表１に示すペースト組成物を用い、シリコンチップを、下記の硬化条件により硬化し、接着した。その後スミコンＥＭＥ−Ｇ７７０（住友ベークライト（株）製）の封止材料を用い、封止したパッケージを８５℃、相対湿度６０％、１６８時間吸湿処理した後、ＩＲリフロー処理（２６０℃１０秒、３回リフロー）を行い、処理後のパッケージを超音波探傷装置（透過型）により剥離の程度を測定した。ダイアタッチ部の剥離面積が１０％未満の場合を合格とした。
パッケージ：３５×３５ｍｍＢＧＡチップサイズ：１０×１０ｍｍ硬化条件：１５０℃３０分 Evaluation Method / Viscosity: A value at 25 ° C. and 2.5 rpm was measured using an E-type viscometer (3 ° cone).
-Elastic modulus: A test piece of 10 x 150 x 0.1 mm was prepared (curing conditions 150 ° C, 15 minutes), a load-displacement curve was measured by a tensile test, and an elastic modulus was obtained from the initial gradient (measurement length: 100 mm, test speed: 1 mm / min, measurement temperature: 25 ° C.).
Solder crack resistance: Using the paste composition shown in Table 1, the silicon chip was cured and bonded under the following curing conditions. Thereafter, using a sealing material of Sumicon EME-G770 (manufactured by Sumitomo Bakelite Co., Ltd.), the sealed package was subjected to moisture absorption treatment at 85 ° C., relative humidity 60%, 168 hours, and then IR reflow treatment (260 ° C. for 10 seconds, 3 seconds The package after the treatment was measured for the degree of peeling with an ultrasonic flaw detector (transmission type). The case where the peeling area of the die attach part was less than 10% was regarded as acceptable.
Package: 35 × 35 mm BGA Chip size: 10 × 10 mm Curing condition: 150 ° C. for 30 minutes


Claims (4)

（Ａ）熱硬化性樹脂組成物と（Ｂ）有機樹脂粒子とを含むことを特徴とする絶縁性半導体用樹脂ペースト。 A resin paste for an insulating semiconductor comprising (A) a thermosetting resin composition and (B) organic resin particles. （Ｂ）有機樹脂粒子がシロキサン結合を三次元網目状に架橋した構造を持つポリオルガノシルセスキオキサン硬化物粉末及び／又は直鎖状のジメチルポリシロキサンを架橋した構造を持つシリコーンゴムの微粉末及び／又は直鎖状のジメチルポリシロキサンを架橋した構造を持つシリコーンゴムの微粉末の表面をシロキサン結合を三次元網目状に架橋した構造を持つポリオルガノシルセスキオキサン硬化物粉末で被覆した微粉末である請求項１記載の絶縁性半導体樹脂ペースト。 (B) Polyorganosilsesquioxane cured powder having a structure in which organic resin particles are crosslinked with siloxane bonds in a three-dimensional network and / or fine powder of silicone rubber having a structure in which linear dimethylpolysiloxane is crosslinked And / or the surface of a fine powder of silicone rubber having a structure in which linear dimethylpolysiloxane is crosslinked is coated with a cured polyorganosilsesquioxane powder having a structure in which siloxane bonds are crosslinked in a three-dimensional network. The insulating semiconductor resin paste according to claim 1, which is a powder. （Ｂ）有機樹脂粒子が、平均粒径が０．５〜１５μｍで且つ最大粒径が５０μｍ以下である請求項２記載の絶縁性半導体樹脂ペースト。 (B) The insulating semiconductor resin paste according to claim 2, wherein the organic resin particles have an average particle size of 0.5 to 15 µm and a maximum particle size of 50 µm or less. 請求項１、２又は３記載の半導体樹脂ペーストを用いて製作されてなる半導体装置。 A semiconductor device manufactured using the semiconductor resin paste according to claim 1.
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JP2013067756A (en) * 2011-09-26 2013-04-18 Tamura Seisakusho Co Ltd Curable resin composition, and flexible substrate and reflection sheet having film of curable resin composition
JP2014152310A (en) * 2013-02-13 2014-08-25 Panasonic Corp Liquid epoxy resin composition and semiconductor device using the same

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JP2013067756A (en) * 2011-09-26 2013-04-18 Tamura Seisakusho Co Ltd Curable resin composition, and flexible substrate and reflection sheet having film of curable resin composition
JP2014152310A (en) * 2013-02-13 2014-08-25 Panasonic Corp Liquid epoxy resin composition and semiconductor device using the same

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