JP2007243062A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 200
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 125000005842 heteroatom Chemical group 0.000 claims description 116
- 239000000758 substrate Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 230000001154 acute effect Effects 0.000 claims description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 67
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- 238000012986 modification Methods 0.000 description 47
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- 239000002772 conduction electron Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】ドレイン領域2とヘテロ半導体領域3とゲート絶縁膜4とが接する3重点aとゲート電極5との距離が最短となるゲート電極最短点bからゲート絶縁膜4とドレイン領域2との接合面に下ろした垂線が接合面と接する接触点cと、3重点aとの距離が、ゲート絶縁膜4の厚みよりも小さくなるように構成される。
【選択図】図2
Description
N− 型のドレイン領域2が形成されて半導体基体を形成し、ドレイン領域2の基板領域1との接合面に対向する主面に接するように、例えばN型の多結晶シリコンからなるヘテロ半導体領域3が形成されている。すなわち、ドレイン領域2とヘテロ半導体領域3との接合部は、炭化珪素と多結晶シリコンのバンドギャップが異なる材料によるヘテロ接合からなっており、その接合界面にはエネルギー障壁が存在している。
2…ドレイン領域
3…ヘテロ半導体領域
4…ゲート絶縁膜
5…ゲート電極
6…ソース電極
7…ドレイン電極
8…第一の電界緩和領域
9…第二の電界緩和領域
10…導通領域
11…電界緩和ヘテロ半導体領域
12…マスク材
Claims (6)
- 第一導電型の半導体基体と、
前記半導体基体の一主面に接して前記半導体基体とヘテロ接合を形成するヘテロ半導体領域と、
前記ヘテロ半導体領域と前記半導体基体との接合端部に隣接してゲート絶縁膜を介して配設されたゲート電極と、
前記ヘテロ半導体領域に接続されたソース電極と、
前記半導体基体に接続されたドレイン電極と
を有する半導体装置において、
前記接合端部と前記ゲート電極との距離が最短となるゲート電極最短点から前記ゲート絶縁膜と前記半導体基体との接合面に下ろした垂線が前記接合面と接する接触点と、前記接合端部との距離が、前記半導体基体に接する前記ゲート絶縁膜の厚みよりも小さい
ことを特徴とする半導体装置。 - 前記ゲート絶縁膜と前記ヘテロ半導体領域との接合端部のなす角度が鋭角である
ことを特徴とする請求項1に記載の半導体装置。 - 前記半導体基体と前記ヘテロ半導体領域との接合面と、前記半導体基体と前記ゲート絶縁膜との接合面とでなす角度は、180°以下である
ことを特徴とする請求項1または2に記載の半導体装置。 - 前記半導体基体は炭化珪素からなる
ことを特徴とする請求項1,2及び3のいずれか1項に記載の半導体装置。 - 前記ヘテロ半導体領域は、単結晶シリコン、多結晶シリコンならびにアモルファスシリコンのいずれかで構成されている
ことを特徴とする請求項1、2,3及び4のいずれか1項に記載の半導体装置。 - 第一導電型の半導体基体に前記半導体基体とヘテロ接合を構成するヘテロ半導体領域を形成する第1の工程と、
前記ヘテロ半導体領域に前記ヘテロ半導体領域を選択的に除去するマスク材を形成する第2の工程と、
前記マスク材をマスクにして、前記ヘテロ半導体領域を選択的に除去する第3の工程と、
前記半導体基体と前記ヘテロ半導体領域上にゲート絶縁膜を形成する第4の工程と、
前記ゲート絶縁膜を介して、前記半導体基体と前記ヘテロ半導体領域との接合端部に隣接してゲート電極を形成する第5の工程と、
前記ヘテロ半導体領域に接続されたソース電極を形成する第6の工程と、
前記半導体基体に接続されたドレイン電極を形成する第7の工程とを備え、
前記第3の工程は、前記接合端部と前記ゲート電極との距離が最短となるゲート電極最短点から前記ゲート絶縁膜と前記半導体基体との接合面に下ろした垂線が前記接合面と接する接触点と、前記接合端部との距離が、前記半導体基体に接する前記ゲート絶縁膜の厚みよりも小さく形成する
ことを特徴とする半導体装置の製造方法。
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JP2006066492A JP5034278B2 (ja) | 2006-03-10 | 2006-03-10 | 半導体装置の製造方法 |
US11/714,214 US7671383B2 (en) | 2006-03-10 | 2007-03-06 | Semiconductor device and method of producing the same |
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JP2015061018A (ja) * | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
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JP2009211732A (ja) * | 2008-02-29 | 2009-09-17 | Eastman Kodak Co | シフトレジスタ回路および表示装置 |
JP5625314B2 (ja) * | 2009-10-22 | 2014-11-19 | サンケン電気株式会社 | 半導体装置 |
IT1401756B1 (it) | 2010-08-30 | 2013-08-02 | St Microelectronics Srl | Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione. |
IT1401754B1 (it) | 2010-08-30 | 2013-08-02 | St Microelectronics Srl | Dispositivo elettronico integrato e relativo metodo di fabbricazione. |
IT1401755B1 (it) * | 2010-08-30 | 2013-08-02 | St Microelectronics Srl | Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione. |
US8530978B1 (en) * | 2011-12-06 | 2013-09-10 | Hrl Laboratories, Llc | High current high voltage GaN field effect transistors and method of fabricating same |
US10276712B2 (en) | 2014-05-29 | 2019-04-30 | Hrl Laboratories, Llc | III-nitride field-effect transistor with dual gates |
US9812532B1 (en) | 2015-08-28 | 2017-11-07 | Hrl Laboratories, Llc | III-nitride P-channel transistor |
CN108292678B (zh) | 2015-11-19 | 2021-07-06 | Hrl实验室有限责任公司 | 具有双栅极的iii族氮化物场效应晶体管 |
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