JP2007221043A - Electronic component - Google Patents

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Publication number
JP2007221043A
JP2007221043A JP2006042328A JP2006042328A JP2007221043A JP 2007221043 A JP2007221043 A JP 2007221043A JP 2006042328 A JP2006042328 A JP 2006042328A JP 2006042328 A JP2006042328 A JP 2006042328A JP 2007221043 A JP2007221043 A JP 2007221043A
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Prior art keywords
package
lead
electronic component
edge
shape
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Japanese (ja)
Inventor
Sada Sawamura
貞 澤村
Yoichi Fujii
要一 藤井
Gakuo Igarashi
岳夫 五十嵐
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Nihon Almit Co Ltd
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Nihon Almit Co Ltd
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Priority to JP2006042328A priority Critical patent/JP2007221043A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component wherein a semiconductor element is sealed by a package, and whisker is suppressed as caused from the surface of the leads of the package from which many leads are projected. <P>SOLUTION: The semiconductor element of the electronic component is sealed in the package such as a flat package, an outline package, and an inline package; and the many leads 3 are projected from the package. All or part of edges 3c on the surface of the leads is formed to be curved. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体素子がパッケージにより封入され、パッケージから多数のリードが突出する電子部品のリードの表面から発生するウィスカを抑制する電子部品に関する。 The present invention relates to an electronic component that suppresses whiskers generated from the surface of a lead of an electronic component in which a semiconductor element is enclosed by a package and a large number of leads protrude from the package.

一般に、ウィスカは、電子部品のリードの金属表面から成長するひげ状の結晶であり、電子産業では、以前から電子部品のSnめっきから発生するSnウィスカが大きな問題となっていた。Snウィスカは時間と共に成長し、短絡を引き起こす可能性がある。
近年、環境問題による半田合金のPbフリー化が進み、半田付部のSn濃度が高くなることにより、半田付部からのSnウィスカの発生も懸念されている。
ウィスカは、めっきのSn自身の酸化による内部応力によって引き起こされる可能性が高く、特に、リードの表面のエッジ部から発生することが多い。
詳しい原因はわかっていないが、従来のリードの表面のエッジ形状は角状であり、内部応力が集中するからであると推察されている。
図3に示されるようにフラットパッケージ、アウトラインパッケージ、インラインパッケージ等を有する電子部品1は、半導体素子がパッケージ2により封入され、外部に多数のリード3が突出される。
図3、図4(a)およびリード3の横断面図である図4(b)に示されるようにリード3の表面のエッジ3aの形状の全部は角状に形成され、基板上に半田付により接合される。
従来、特開2004−200249号公報(特許文献1)にて、ウィスカの発生を抑制するために外部端子の表面に形成したPbフリーのSn系合金めっき層から成る接続用導電層を溶融させる際に、加熱処理によって電子部品の内部まで熱的影響を与えることがないようにする電子部品及びその製造方法並びに製造装置が提案されている。
この従来の電子部品及びその製造方法並びに製造装置は、リードの表面に形成した接続用導電層を構成するSn−Bi合金めっき層を、Sn−Bi合金めっき層の融点以上である220〜280℃に加熱したフッ素系不活性化学液内に0.2〜5秒間のごく短時間浸漬することで溶融させるものである。
特開2004−200249号公報
In general, whiskers are whisker-like crystals grown from the metal surface of the lead of an electronic component, and Sn whiskers generated from Sn plating of electronic components have been a major problem in the electronic industry. Sn whiskers grow over time and can cause short circuits.
In recent years, Pb-free solder alloys due to environmental problems have progressed and the Sn concentration in soldered portions has increased, and there is a concern about the occurrence of Sn whiskers from the soldered portions.
The whisker is likely to be caused by internal stress due to oxidation of the Sn itself of the plating, and is often generated particularly from the edge portion of the surface of the lead.
Although the detailed cause is unknown, it is presumed that the edge shape on the surface of the conventional lead is square and the internal stress is concentrated.
As shown in FIG. 3, in an electronic component 1 having a flat package, an outline package, an inline package, and the like, a semiconductor element is encapsulated by a package 2, and a large number of leads 3 protrude outside.
As shown in FIGS. 3 and 4A and FIG. 4B, which is a cross-sectional view of the lead 3, the shape of the edge 3a on the surface of the lead 3 is formed in a square shape and soldered onto the substrate. Are joined together.
Conventionally, in Japanese Patent Application Laid-Open No. 2004-220409 (Patent Document 1), when a conductive layer for connection composed of a Pb-free Sn-based alloy plating layer formed on the surface of an external terminal to suppress the generation of whiskers is melted In addition, an electronic component, a manufacturing method thereof, and a manufacturing apparatus have been proposed in which the heat treatment does not affect the inside of the electronic component thermally.
In this conventional electronic component, its manufacturing method, and manufacturing apparatus, the Sn—Bi alloy plating layer constituting the connection conductive layer formed on the surface of the lead is 220 to 280 ° C. which is equal to or higher than the melting point of the Sn—Bi alloy plating layer. It is melted by immersing it in a fluorine-based inert chemical solution heated for a very short time of 0.2 to 5 seconds.
JP 2004-200409 A

そこで、本発明は、半導体素子がパッケージにより封入され、パッケージから多数のリードが突出する電子部品のリードの表面から発生するウィスカを抑制する電子部品を提供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide an electronic component that suppresses whiskers generated from the surface of a lead of an electronic component in which a semiconductor element is enclosed by a package and a large number of leads protrude from the package.

本発明の電子部品は、半導体素子がパッケージ2により封入され、パッケージ2から多数のリード3が突出する電子部品1において、
前記リード3の表面のエッジ3bの形状の全部が、図1(a)(b)に示されるように曲線状である。
あるいは、前記リード3の表面のエッジ3cの一部が、図2(a)(b)に示されるように曲線状である。
さらに、前記パッケージは、フラットパッケージ、アウトラインパッケージ、インラインパッケージである。
ここで、フラットパッケージ、アウトラインパッケージ、インラインパッケージとは、QFP(Quad
Flat Package)、SOP(Small Outline Package)、TSOP(Thin Small Outline Package)、SOJ(Small
Outline J−leaded Package)、DIP(Dual Inline Package)、およびZIP(Zig−Zag In−line Package)等をいう。
The electronic component of the present invention is an electronic component 1 in which a semiconductor element is enclosed by a package 2 and a large number of leads 3 protrude from the package 2.
The entire shape of the edge 3b on the surface of the lead 3 is curved as shown in FIGS.
Alternatively, a part of the edge 3c on the surface of the lead 3 has a curved shape as shown in FIGS.
Further, the package is a flat package, an outline package, or an inline package.
Here, flat package, outline package, and inline package are QFP (Quad).
Flat Package), SOP (Small Outline Package), TSOP (Thin Small Outline Package), SOJ (Small)
Examples include Outline J-leaded Package (DIP), Dual Inline Package (DIP), and Zig-Zag In-line Package (ZIP).

本発明の電子部品によれば、半導体素子がパッケージにより封入され、パッケージから多数のリードが突出する電子部品において、前記リードの表面のエッジの形状の全部あるいは一部が曲線状である。
このため、リードの表面のSnの酸化による応力を緩和させ、基板への半田付後、リードの表面から発生するウィスカが抑制される。
ここで、パッケージは、フラットパッケージ、アウトラインパッケージ、インラインパッケージ等であり、このパッケージを有する電子部品のリードの表面のエッジ形状は角状で、最もウィスカの発生が懸念されるが、ウィスカの発生が抑制される。
According to the electronic component of the present invention, in the electronic component in which the semiconductor element is encapsulated by the package and a large number of leads protrude from the package, all or part of the shape of the edge of the surface of the lead is curved.
For this reason, stress due to oxidation of Sn on the surface of the lead is relaxed, and whiskers generated from the surface of the lead after soldering to the substrate are suppressed.
Here, the package is a flat package, an outline package, an inline package, and the like, and the edge shape of the surface of the lead of the electronic component having this package is square, and there is a concern about the occurrence of whiskers. It is suppressed.

以下、図面を参照して、本発明を、その実施例に基づいて説明する。
本発明の電子部品は、半導体素子がパッケージ2により封入され、パッケージ2から多数のリード3が突出する電子部品1である。
パッケージ2は、フラットパッケージ、アウトラインパッケージ、インラインパッケージで、QFP(Quad
Flat Package)、SOP(Small Outline Package)、TSOP(Thin Small Outline Package)、SOJ(Small
Outline J−leaded Package)、DIP(Dual Inline Package)、およびZIP(Zig−Zag In−line Package)等をいう。
リードの表面のエッジ形状が異なる電子部品を用意し、本試験で用いた電子部品は、一般的に最も多く利用されているQFPを用いることとした。
リード3の表面のエッジ3bの形状の全部が、図1(a)(b)に示されるように曲線状である実施例およびリード3の表面のエッジ3cの一部が、図2(a)(b)に示されるように曲線状である実施例にてウィスカ発生試験を実施した。
従来例である比較例は、図4(a)およびリード3の横断面図である図4(b)に示されるようにリード3の表面のエッジ3aの形状の全部は角状に形成される。
以上の実施例及び比較例のQFPを用意し、鉛フリーはんだであるSn−3.0Ag−0.5Cu(SAC305)、Sn−3.5Ag(SA35)、およびSn−3.5Ag−0.7Cu(SAC357)を用いてはんだ付実装し、評価用試験片を作製した。
作製した評価用基板を高温高湿環境下(80℃・90%)にて500時間放置し、走査型電子顕微鏡(SEM)を用いて、リードの表面を観察し、リードの表面から発生しているウィスカの発生状態を確認した。
この結果を表1にウィスカの状態写真を図5(a)(b)(c)に示す。
Hereinafter, the present invention will be described based on examples thereof with reference to the drawings.
The electronic component of the present invention is an electronic component 1 in which a semiconductor element is enclosed by a package 2 and a large number of leads 3 protrude from the package 2.
Package 2 is a flat package, outline package, inline package, QFP (Quad
Flat Package), SOP (Small Outline Package), TSOP (Thin Small Outline Package), SOJ (Small)
Examples include Outline J-leaded Package (DIP), Dual Inline Package (DIP), and Zig-Zag In-line Package (ZIP).
Electronic components having different lead surface edge shapes were prepared, and the most commonly used QFP was used as the electronic component used in this test.
The embodiment in which the entire shape of the edge 3b on the surface of the lead 3 is curved as shown in FIGS. 1A and 1B and a part of the edge 3c on the surface of the lead 3 are shown in FIG. As shown in (b), a whisker generation test was performed in an example having a curvilinear shape.
In the comparative example which is a conventional example, as shown in FIG. 4A and FIG. 4B which is a cross-sectional view of the lead 3, the shape of the edge 3a on the surface of the lead 3 is formed in a square shape. .
The QFPs of the above examples and comparative examples were prepared, and Sn-3.0Ag-0.5Cu (SAC305), Sn-3.5Ag (SA35), and Sn-3.5Ag-0.7Cu, which are lead-free solders. (SAC357) was used for solder mounting to produce an evaluation test piece.
The prepared evaluation substrate is allowed to stand for 500 hours in a high-temperature and high-humidity environment (80 ° C./90%), and the surface of the lead is observed using a scanning electron microscope (SEM). The state of occurrence of whiskers was confirmed.
The results are shown in Table 1 and whisker state photographs are shown in FIGS. 5 (a), 5 (b) and 5 (c).

Figure 2007221043
Figure 2007221043

エッジ形状を曲線状にしたQFPのリード3の表面は、はんだ付後の高温高湿放置後も滑らかであり、ウィスカの発生は確認できなかった(図5(d)参照)。
一方で、エッジ形状が角状であるQFPのリード3の表面は、半田付後の高温高湿放置後では、凹凸であり、エッジ部から形状の異なる様々なウィスカ発生が確認できる(図5(a)(b)(c)参照)。
リード3の表面のエッジ形状を変化させることで、Snの酸化による内部応力が変化し、ウィスカの発生にも相違が認められたものと推察される。
以上の結果、リード3の表面のエッジ形状を曲線状にした本発明の実施例の電子部品は、リード3の表面が角状である従来例である比較例の電子部品と比較して、リード3の表面からのウィスカの発生を大きく抑制できることが明らかとなった。
The surface of the QFP lead 3 having a curved edge shape was smooth even after being left at a high temperature and high humidity after soldering, and the occurrence of whiskers could not be confirmed (see FIG. 5D).
On the other hand, the surface of the QFP lead 3 having a square edge shape is uneven after being soldered at high temperature and high humidity, and various whisker occurrences having different shapes can be confirmed from the edge portion (FIG. 5 ( a) (b) (c)).
By changing the edge shape of the surface of the lead 3, it is presumed that the internal stress due to the oxidation of Sn is changed, and the difference in whisker generation is recognized.
As a result of the above, the electronic component of the embodiment of the present invention in which the edge shape of the surface of the lead 3 is curved is compared with the electronic component of the comparative example which is a conventional example in which the surface of the lead 3 is square. It was revealed that whisker generation from the surface of No. 3 can be greatly suppressed.

本発明の実施例のエッジの形状の全部が曲線状であるリードの斜視図である。It is a perspective view of the lead | read | reed whose all the shapes of the edge of the Example of this invention are curvilinear. 図1(a)のリードの横断面図である。It is a cross-sectional view of the lead of FIG. 本発明の実施例のエッジの形状の一部が曲線状であるリードの斜視図である。It is a perspective view of the lead where a part of shape of the edge of the example of the present invention is curvilinear. 図2(a)のリードの横断面図である。It is a cross-sectional view of the lead of FIG. 半導体素子がパッケージにより封入され、パッケージから多数のリードが突出する電子部品の外観図である。1 is an external view of an electronic component in which a semiconductor element is enclosed by a package and a large number of leads protrude from the package. 従来例のリードの斜視図である。It is a perspective view of the lead | read | reed of a prior art example. 図4(a)のリードの横断面図である。FIG. 5 is a cross-sectional view of the lead of FIG. 図4(a)(b)の従来例のSAC305を用いて実装したエッジ形状が角状であるリードの表面のエッジから発生したウィスカの状態写真である。It is the state photograph of the whisker which generate | occur | produced from the edge of the surface of the lead | read | reed whose edge shape mounted using SAC305 of the prior art example of Fig.4 (a) (b) is square. 図4(a)(b)の従来例のSA35を用いて実装したエッジ形状が角状であるリードの表面のエッジから発生したウィスカの状態写真である。It is the state photograph of the whisker which generate | occur | produced from the edge of the surface of the lead whose edge shape mounted using SA35 of the prior art example of Fig.4 (a) (b) is square. 図4(a)(b)の従来例のSAC357を用いて実装したエッジ形状が角状であるリードの表面のエッジから発生したウィスカの状態写真である。It is the state photograph of the whisker generated from the edge of the surface of the lead where the edge shape mounted using SAC357 of the conventional example of Drawing 4 (a) and (b) is square. 本発明の実施例のSAC305を用いて実装したエッジ形状が曲線状であるリードの表面の状態写真である。It is the state photograph of the surface of the lead | read | reed with which the edge shape mounted using SAC305 of the Example of this invention is curvilinear.

符号の説明Explanation of symbols

1 電子部品
2 パッケージ
3 リード
3a,3b,3c エッジ
1 Electronic component 2 Package 3 Lead 3a, 3b, 3c Edge

Claims (2)

半導体素子がパッケージにより封入され、前記パッケージから多数のリードが突出する電子部品において、
前記リードの表面のエッジの全部あるいは一部が曲線状であることを特徴とする電子部品。
In an electronic component in which a semiconductor element is enclosed by a package and a large number of leads protrude from the package,
An electronic component characterized in that all or part of the edge of the surface of the lead is curved.
前記パッケージは、フラットパッケージ、アウトラインパッケージ、インラインパッケージである請求項1記載の電子部品。

The electronic component according to claim 1, wherein the package is a flat package, an outline package, or an inline package.

JP2006042328A 2006-02-20 2006-02-20 Electronic component Pending JP2007221043A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117840A (en) * 2015-12-21 2017-06-29 ルネサスエレクトロニクス株式会社 Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102379A (en) * 1991-10-03 1993-04-23 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPH0714970A (en) * 1993-06-22 1995-01-17 Hitachi Ltd Semiconductor device and its mounting method
JPH0722569A (en) * 1993-07-07 1995-01-24 Hitachi Ltd Outer lead and semiconductor device employing the lead
JPH10135396A (en) * 1996-10-28 1998-05-22 Saitama Nippon Denki Kk Surface mounting electronic part

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102379A (en) * 1991-10-03 1993-04-23 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPH0714970A (en) * 1993-06-22 1995-01-17 Hitachi Ltd Semiconductor device and its mounting method
JPH0722569A (en) * 1993-07-07 1995-01-24 Hitachi Ltd Outer lead and semiconductor device employing the lead
JPH10135396A (en) * 1996-10-28 1998-05-22 Saitama Nippon Denki Kk Surface mounting electronic part

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117840A (en) * 2015-12-21 2017-06-29 ルネサスエレクトロニクス株式会社 Semiconductor device

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