JP2004358540A - High-temperature brazing filler metal - Google Patents
High-temperature brazing filler metal Download PDFInfo
- Publication number
- JP2004358540A JP2004358540A JP2003162689A JP2003162689A JP2004358540A JP 2004358540 A JP2004358540 A JP 2004358540A JP 2003162689 A JP2003162689 A JP 2003162689A JP 2003162689 A JP2003162689 A JP 2003162689A JP 2004358540 A JP2004358540 A JP 2004358540A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- filler metal
- wettability
- brazing filler
- temperature brazing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、電子部品や機械部品の組立などにおける高温はんだ付用のろう材、特にこれに用いるZn系はんだ合金に関する。
【0002】
【従来の技術】
パワートランジスタ素子のダイボンディングを始めとする各種電子部品の組立工程におけるはんだ付けでは、高温はんだ付けが行われ、比較的高温の300℃前後の融点を有するはんだ合金(以下、単に「はんだ合金」という)がろう材として用いられている。このはんだ合金には、Pb−5重量%Sn合金に代表されるPb合金(Pb系はんだ合金)が従来より用いられている。
【0003】
近年、環境汚染に対する配慮からPbの使用を制限する動きが強くなってきている。こうした動きに対応して電子組立の分野においても、Pbを含まないはんだ合金が求められている。
【0004】
Pbを含まないはんだ合金として、Zn−Al−Ge合金、Zn−Al−Ge−Mg合金が特開2000−208533号で提案されている。しかし、Agめっきに対する濡れ性は得られるものの、CuやNiに対しては濡れ性が不足し接合することができない。
【0005】
【特許文献1】
特開2000−208533号公報
【0006】
【発明が解決しようとする課題】
本発明の目的は、上記事情に鑑み、CuやNiに対する濡れ性を向上させたZn−Al−Geはんだ合金、Zn−Al−Ge−Mgはんだ合金による高温ろう材を提供することにある。
【0007】
【課題を解決するための手段】
本発明による高温ろう材は、Alを2〜9重量%、Geを2〜9重量%、Pを0.001〜0.5重量%含み、残部がZnおよび不可避不純物からなる。
【0008】
また、別の態様では、Alを2〜9重量%、Geを2〜9重量%、Mgを0.01〜0.5重量%、Pを0.001〜0.5重量%含み、残部がZnおよび不可避不純物からなる。
【0009】
この高温ろう材は、Pbを含まないZn系合金からなり、かつ、従来のZn系合金に比べてCuやNiに対する濡れ性が向上するため、半導体装置の組立に広範囲に適用できる。その結果、Pbを含まない環境に配慮した半導体装置を提供できる。
【0010】
【発明の実施の形態】
本発明の高温ろう材は、融点が420℃であるZnをベースとし、GeおよびPを添加することにより、Agのみならず、CuやNiに対しても、濡れ性を向上させ、さらに、Alを添加することにより、半導体装置の組立に際するダイボンディング温度を低温化させている。
【0011】
Geの含有量を2〜9重量%とするのは、2重量%未満では、濡れ性の向上が不十分で、ダイボンディング時に接合不良を発生する確率が高くなるからであり、一方、9重量%を超えると、合金硬度が高くなりすぎて、熱サイクル試験等の耐環境試験においてチップ割れを発生するようになるからである。好ましくは、3〜7重量%とする。
【0012】
Alの含有量を2〜9重量%とするのは、2重量%未満では、ダイボンディング温度の低下効果が不十分だからであり、一方、9重量%を超えると、ダイボンディング温度の低下効果が飽和するだけでなく、濡れ性が低下してダイボンディング時に接合不良を発生するようなるからである。好ましくは、4〜8重量%とする。
【0013】
Pは、濡れ性を改善する元素であり、この添加によりZn−Al−Mg−Ga合金のCuやNiに対する濡れ性を向上させることができる。これは、ろう材溶解時に酸素がPと優先的に反応し、溶解体表面に酸化膜が発生するのを防止し、濡れ性がより改善されるためと推定している。Pの含有量を0.001〜0.5重量%とするのは、0.001重量%未満では、上記濡れ性を向上させる効果が低すぎてしまうからであり、一方、0.5重量%を超えると、低コストでの鋳造が困難になるからである。好ましくは、0.02〜0.2重量%とする。
【0014】
上記組成に加えて、さらにMgを添加することが好ましい。Mgは、合金の耐食性向上させることにより、素子使用中での接合の信頼性を向上させる働きをする元素である。Mgの含有量を0.01〜0.5重量%とするのは、0.01重量%未満では、添加効果が不十分だからであり、一方、0.5重量%を超えると、合金の濡れ性が低下して、ダイボンディング時に接合不良を発生するようになるからである。好ましくは、0.1〜0.3重量%とする。
【0015】
【実施例】
[実施例1〜12、比較例1〜2]
Zn地金、Al地金、Mg地金、金属GeおよびP(以上の原料は、いずれも純度99.9重量%)を用い、大気溶解炉によりろう材を溶製した。溶製したろう材を化学分析し、その結果を表1に示す。
【0016】
上記溶製したろう材について、濡れ性の評価を次のように行った。(1)400℃窒素気流中で保持するろう材浴を調製する、(2)Niめっきを施した銅片および銅片を上記浴中に5秒間浸漬した後、該銅片を取り出し観察する、(3)取り出した銅片のNiめっき面、銅面にろう材が濡れ広がった場合に「良」と、濡れ広がらなかった場合に「不良」と評価する。上記評価の結果を表1に示す。
【0017】
【表1】
【0018】
表1より、実施例のろう材は、CuやNiに対しても良好な濡れ性が得られ、電子部品や機械部品の組立における高温はんだ付用に好適であり、かつ、広範囲に適用できることがわかる。
【0019】
【発明の効果】
本発明により、従来のZn系はんだ合金の濡れ性を改善し、Pbはんだ代替のろう材を提供することができる。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a brazing filler metal for high-temperature soldering in assembling electronic parts and mechanical parts, and more particularly to a Zn-based solder alloy used for the same.
[0002]
[Prior art]
In the soldering process of assembling various electronic components including die bonding of power transistor elements, high-temperature soldering is performed, and a relatively high-temperature solder alloy having a melting point of about 300 ° C. (hereinafter, simply referred to as “solder alloy”) ) Is used as a brazing filler metal. As this solder alloy, a Pb alloy (Pb-based solder alloy) represented by a Pb-5% by weight Sn alloy has been conventionally used.
[0003]
In recent years, there has been a strong movement to limit the use of Pb due to consideration for environmental pollution. In response to such a movement, a solder alloy containing no Pb is required in the field of electronic assembly.
[0004]
As a solder alloy containing no Pb, a Zn-Al-Ge alloy and a Zn-Al-Ge-Mg alloy have been proposed in JP-A-2000-208533. However, although the wettability to Ag plating is obtained, the wettability to Cu and Ni is insufficient, so that bonding cannot be performed.
[0005]
[Patent Document 1]
JP 2000-208533 A
[Problems to be solved by the invention]
In view of the above circumstances, an object of the present invention is to provide a high-temperature brazing material made of a Zn-Al-Ge solder alloy and a Zn-Al-Ge-Mg solder alloy having improved wettability to Cu and Ni.
[0007]
[Means for Solving the Problems]
The high-temperature brazing filler metal according to the present invention contains 2 to 9% by weight of Al, 2 to 9% by weight of Ge, 0.001 to 0.5% by weight of P, and the balance consists of Zn and unavoidable impurities.
[0008]
In another aspect, 2 to 9% by weight of Al, 2 to 9% by weight of Ge, 0.01 to 0.5% by weight of Mg, 0.001 to 0.5% by weight of P, and the balance It consists of Zn and unavoidable impurities.
[0009]
This high-temperature brazing material is made of a Zn-based alloy containing no Pb and has improved wettability to Cu and Ni as compared with a conventional Zn-based alloy, so that it can be widely applied to the assembly of semiconductor devices. As a result, an environment-friendly semiconductor device containing no Pb can be provided.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
The high-temperature brazing material of the present invention is based on Zn having a melting point of 420 ° C., and by adding Ge and P, improves the wettability not only for Ag but also for Cu and Ni. Is added to lower the die bonding temperature in assembling the semiconductor device.
[0011]
The reason why the content of Ge is set to 2 to 9% by weight is that if the content is less than 2% by weight, the wettability is insufficiently improved and the probability of occurrence of bonding failure during die bonding increases. %, The alloy hardness becomes too high, and chip cracks occur in an environmental resistance test such as a heat cycle test. Preferably, it is 3 to 7% by weight.
[0012]
The reason why the content of Al is set to 2 to 9% by weight is that when the content is less than 2% by weight, the effect of lowering the die bonding temperature is insufficient. This is because not only saturation is caused, but also wettability is reduced and a bonding failure occurs during die bonding. Preferably, it is 4 to 8% by weight.
[0013]
P is an element that improves wettability, and the addition of P can improve the wettability of the Zn—Al—Mg—Ga alloy with respect to Cu and Ni. This is presumed to be because oxygen reacts preferentially with P when the brazing material is melted, thereby preventing an oxide film from being generated on the surface of the melt and further improving wettability. The content of P is set to 0.001 to 0.5% by weight because if the content is less than 0.001% by weight, the effect of improving the wettability is too low. This is because if it exceeds 300, casting at low cost becomes difficult. Preferably, it is 0.02 to 0.2% by weight.
[0014]
It is preferable to add Mg in addition to the above composition. Mg is an element that functions to improve the reliability of bonding during use of the element by improving the corrosion resistance of the alloy. The reason why the content of Mg is set to 0.01 to 0.5% by weight is that if the content is less than 0.01% by weight, the effect of addition is insufficient. This is because the bonding property is deteriorated and a bonding failure occurs at the time of die bonding. Preferably, it is 0.1 to 0.3% by weight.
[0015]
【Example】
[Examples 1 to 12, Comparative Examples 1 and 2]
A brazing filler metal was melted in an air melting furnace using Zn ingot, Al ingot, Mg ingot, metal Ge and P (all of the above raw materials had a purity of 99.9% by weight). The melted brazing material was chemically analyzed, and the results are shown in Table 1.
[0016]
The wettability of the melted brazing material was evaluated as follows. (1) preparing a brazing material bath held in a nitrogen stream at 400 ° C .; (2) immersing the Ni-plated copper piece and the copper piece in the bath for 5 seconds, and taking out and observing the copper piece; (3) When the brazing material spreads wet on the Ni-plated surface and copper surface of the copper piece taken out, it is evaluated as “good”, and when it does not spread, it is evaluated as “bad”. Table 1 shows the results of the above evaluation.
[0017]
[Table 1]
[0018]
From Table 1, it can be seen that the brazing materials of the examples have good wettability to Cu and Ni, are suitable for high-temperature soldering in assembling electronic components and mechanical components, and can be widely applied. Understand.
[0019]
【The invention's effect】
According to the present invention, it is possible to improve the wettability of a conventional Zn-based solder alloy and provide a brazing filler metal that can substitute for Pb solder.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003162689A JP2004358540A (en) | 2003-06-06 | 2003-06-06 | High-temperature brazing filler metal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003162689A JP2004358540A (en) | 2003-06-06 | 2003-06-06 | High-temperature brazing filler metal |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004358540A true JP2004358540A (en) | 2004-12-24 |
Family
ID=34054763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003162689A Pending JP2004358540A (en) | 2003-06-06 | 2003-06-06 | High-temperature brazing filler metal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2004358540A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007013064A (en) * | 2005-07-04 | 2007-01-18 | Toyota Central Res & Dev Lab Inc | Semiconductor module |
WO2009066704A1 (en) | 2007-11-20 | 2009-05-28 | Toyota Jidosha Kabushiki Kaisha | Solder material, process for producing the solder material, joint product, process for producing the joint product, power semiconductor module, and process for producing the power semiconductor module |
WO2010089647A1 (en) | 2009-02-05 | 2010-08-12 | Toyota Jidosha Kabushiki Kaisha | Junction body, semiconductor module, and manufacturing method for junction body |
JP2011235314A (en) * | 2010-05-11 | 2011-11-24 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY HAVING ZN AS MAIN COMPONENT |
JP2011251298A (en) * | 2010-05-31 | 2011-12-15 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
JP2012055905A (en) * | 2010-09-07 | 2012-03-22 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
WO2012077415A1 (en) * | 2010-12-08 | 2012-06-14 | 住友金属鉱山株式会社 | Pb-FREE SOLDER ALLOY HAVING Zn AS MAIN COMPONENT |
JP2012228729A (en) * | 2011-04-27 | 2012-11-22 | Sumitomo Metal Mining Co Ltd | Pb FREE SOLDER ALLOY MAKING Zn PRINCIPAL INGREDIENT AND METHOD OF MANUFACTURING THE SAME |
US8356742B2 (en) | 2006-11-21 | 2013-01-22 | Hitachi, Ltd. | Method for manufacturing a semiconductor device using an Al-Zn connecting material |
JP2014151364A (en) * | 2013-02-13 | 2014-08-25 | Toyota Industries Corp | Solder and die bond structure |
JP2015027697A (en) * | 2013-07-04 | 2015-02-12 | 住友金属鉱山株式会社 | CLAD MATERIAL OF Pb-FREE Zn-Al-BASED ALLOY SOLDER AND Cu- BASED BASE MATERIAL AND PRODUCTION METHOD OF THE SAME |
TWI485027B (en) * | 2012-11-30 | 2015-05-21 | Hua Eng Wire & Cable Co Ltd | Composite of tin-silver alloy coating without lead |
JP2015098048A (en) * | 2013-11-19 | 2015-05-28 | 住友金属鉱山株式会社 | Zn-Ge-BASED SOLDER ALLOY WITHOUT Pb, AND ELECTRONIC COMPONENT USING THE SAME |
EP3192610A1 (en) * | 2014-04-17 | 2017-07-19 | Heraeus Materials Singapore Pte. Ltd. | Lead-free eutectic solder alloy comprising zinc as the main component and aluminum as an alloying metal |
-
2003
- 2003-06-06 JP JP2003162689A patent/JP2004358540A/en active Pending
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4699822B2 (en) * | 2005-07-04 | 2011-06-15 | 株式会社豊田中央研究所 | Manufacturing method of semiconductor module |
JP2007013064A (en) * | 2005-07-04 | 2007-01-18 | Toyota Central Res & Dev Lab Inc | Semiconductor module |
US8356742B2 (en) | 2006-11-21 | 2013-01-22 | Hitachi, Ltd. | Method for manufacturing a semiconductor device using an Al-Zn connecting material |
US8283783B2 (en) | 2007-11-20 | 2012-10-09 | Toyota Jidosha Kabushiki Kaisha | Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same |
WO2009066704A1 (en) | 2007-11-20 | 2009-05-28 | Toyota Jidosha Kabushiki Kaisha | Solder material, process for producing the solder material, joint product, process for producing the joint product, power semiconductor module, and process for producing the power semiconductor module |
WO2010089647A1 (en) | 2009-02-05 | 2010-08-12 | Toyota Jidosha Kabushiki Kaisha | Junction body, semiconductor module, and manufacturing method for junction body |
JP2011235314A (en) * | 2010-05-11 | 2011-11-24 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY HAVING ZN AS MAIN COMPONENT |
JP2011251298A (en) * | 2010-05-31 | 2011-12-15 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
JP2012055905A (en) * | 2010-09-07 | 2012-03-22 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
US8845828B2 (en) | 2010-12-08 | 2014-09-30 | Sumitomo Metal Mining Co., Ltd. | Pb-free solder alloy mainly containing Zn |
DE112011104328B4 (en) * | 2010-12-08 | 2015-09-24 | Sumitomo Metal Mining Co., Ltd. | Pb-free solder alloy containing predominantly Zn |
JP2012121053A (en) * | 2010-12-08 | 2012-06-28 | Sumitomo Metal Mining Co Ltd | Lead free soldering alloy containing zinc as principal component |
GB2498912A (en) * | 2010-12-08 | 2013-07-31 | Sumitomo Metal Mining Co | Pb-Free Solder Alloy Having Zn as Main Component |
CN103249519A (en) * | 2010-12-08 | 2013-08-14 | 住友金属矿山株式会社 | Pb-free solder alloy having Zn as main component |
WO2012077415A1 (en) * | 2010-12-08 | 2012-06-14 | 住友金属鉱山株式会社 | Pb-FREE SOLDER ALLOY HAVING Zn AS MAIN COMPONENT |
CN103249519B (en) * | 2010-12-08 | 2015-04-29 | 住友金属矿山株式会社 | Pb-free solder alloy having Zn as main component |
JP2012228729A (en) * | 2011-04-27 | 2012-11-22 | Sumitomo Metal Mining Co Ltd | Pb FREE SOLDER ALLOY MAKING Zn PRINCIPAL INGREDIENT AND METHOD OF MANUFACTURING THE SAME |
TWI485027B (en) * | 2012-11-30 | 2015-05-21 | Hua Eng Wire & Cable Co Ltd | Composite of tin-silver alloy coating without lead |
JP2014151364A (en) * | 2013-02-13 | 2014-08-25 | Toyota Industries Corp | Solder and die bond structure |
JP2015027697A (en) * | 2013-07-04 | 2015-02-12 | 住友金属鉱山株式会社 | CLAD MATERIAL OF Pb-FREE Zn-Al-BASED ALLOY SOLDER AND Cu- BASED BASE MATERIAL AND PRODUCTION METHOD OF THE SAME |
JP2015098048A (en) * | 2013-11-19 | 2015-05-28 | 住友金属鉱山株式会社 | Zn-Ge-BASED SOLDER ALLOY WITHOUT Pb, AND ELECTRONIC COMPONENT USING THE SAME |
EP3192610A1 (en) * | 2014-04-17 | 2017-07-19 | Heraeus Materials Singapore Pte. Ltd. | Lead-free eutectic solder alloy comprising zinc as the main component and aluminum as an alloying metal |
US10399186B2 (en) | 2014-04-17 | 2019-09-03 | Heraeus Materials Singapore Pte., Ltd. | Lead-free eutectic solder alloy comprising zinc as the main component and aluminum as an alloying metal |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2883649B1 (en) | High-temperature lead-free solder alloy | |
JP3850135B2 (en) | Zn alloy for high temperature soldering | |
JP5278616B2 (en) | Bi-Sn high temperature solder alloy | |
KR102153273B1 (en) | Solder alloy, solder paste, solder ball, resin-embedded solder and solder joint | |
US9773721B2 (en) | Lead-free solder alloy, connecting member and a method for its manufacture, and electronic part | |
KR101345940B1 (en) | Solder, soldering method, and semiconductor device | |
JPH10144718A (en) | Tin group lead free solder wire and ball | |
JP2004358540A (en) | High-temperature brazing filler metal | |
JP2006035310A (en) | Lead-free solder alloy | |
KR20180130002A (en) | Method for soldering surface-mount component and surface-mount component | |
US20090218387A1 (en) | Method of soldering portions plated by electroless ni plating | |
JP2001284792A (en) | Solder material and method for manufacturing semiconductor device using the same | |
JP2004298931A (en) | High-temperature lead-free solder alloy and electronic part | |
JP3878305B2 (en) | Zn alloy for high temperature soldering | |
JP3878978B2 (en) | Lead-free solder and lead-free fittings | |
JP2006320913A (en) | High temperature solder alloy | |
JP2004114093A (en) | High temperature brazing filler metal | |
JP2004358539A (en) | High-temperature brazing filler metal | |
JP2001246493A (en) | Soldering material, device or apparatus using same and its producing method | |
JP4022013B2 (en) | Zn alloy for die bonding | |
JP2005052869A (en) | Brazing material for high temperature soldering and semiconductor device using it | |
JP2008028413A (en) | Method for soldering electronic components | |
JPH11172353A (en) | Zn alloy for high temperature soldering | |
JP2006320912A (en) | High temperature solder alloy | |
JP6887183B1 (en) | Solder alloys and molded solders |