JP2007214182A - 半導体装置の製造方法およびエッチング液 - Google Patents
半導体装置の製造方法およびエッチング液 Download PDFInfo
- Publication number
- JP2007214182A JP2007214182A JP2006029639A JP2006029639A JP2007214182A JP 2007214182 A JP2007214182 A JP 2007214182A JP 2006029639 A JP2006029639 A JP 2006029639A JP 2006029639 A JP2006029639 A JP 2006029639A JP 2007214182 A JP2007214182 A JP 2007214182A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etching solution
- ozone
- film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 88
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 44
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 238000001020 plasma etching Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 208000037466 short stature, oligodontia, dysmorphic facies, and motor delay Diseases 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】半導体装置の製造方法は、86wt%〜97.9wt%のH2SO4と、0.1wt%〜10wt%のHFと、2wt%〜4wt%のH2Oとを含む液体に10ppm以上のオゾンを溶解させたエッチング液5を用いたエッチング工程を具備する。
【選択図】図1
Description
10 シリコン基板
20 トンネルゲート絶縁膜
30 フローティングゲート
40 ONO膜
50 コントロールゲート
60 シリサイド膜
70 シリコン窒化膜
80 BSG膜
90 エッチング残渣
Claims (5)
- 86wt%〜97.9wt%のH2SO4と、0.1wt%〜10wt%のHFと、2wt%〜4wt%のH2Oとを含む液体に10ppm以上のオゾンを溶解させたエッチング液を用いたエッチング工程を具備した半導体装置の製造方法。
- 前記エッチング液は、熱酸化膜に対してCF系堆積物およびSiO2系堆積物を選択的にエッチングするために用いられることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記エッチング工程は、20℃〜150℃の前記エッチング液を用いて実行されることを特徴とする請求項1または請求項2に記載の半導体装置の製造方法。
- 半導体装置の製造工程に用いられるエッチング液であって、
86wt%から97.9wt%のH2SO4と、0.1wt%から10wt%のHFと、2wt%から4wt%のH2Oとを含む液体に10ppm以上のオゾンを溶解させたことを特徴とするエッチング液。 - 前記エッチング液は、H2SO4の一部にペルオキソ硫酸を含むことを特徴とする請求項4に記載のエッチング液。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006029639A JP4728826B2 (ja) | 2006-02-07 | 2006-02-07 | 半導体装置の製造方法およびエッチング液 |
US11/702,575 US7727871B2 (en) | 2006-02-07 | 2007-02-06 | Manufacturing method of semiconductor device using etching solution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006029639A JP4728826B2 (ja) | 2006-02-07 | 2006-02-07 | 半導体装置の製造方法およびエッチング液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007214182A true JP2007214182A (ja) | 2007-08-23 |
JP4728826B2 JP4728826B2 (ja) | 2011-07-20 |
Family
ID=38492376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006029639A Expired - Fee Related JP4728826B2 (ja) | 2006-02-07 | 2006-02-07 | 半導体装置の製造方法およびエッチング液 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7727871B2 (ja) |
JP (1) | JP4728826B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4644170B2 (ja) * | 2006-09-06 | 2011-03-02 | 栗田工業株式会社 | 基板処理装置および基板処理方法 |
US8709165B2 (en) | 2010-12-03 | 2014-04-29 | Lam Research Ag | Method and apparatus for surface treatment using inorganic acid and ozone |
JP6168271B2 (ja) * | 2012-08-08 | 2017-07-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US9353923B2 (en) | 2014-10-08 | 2016-05-31 | Orion Energy Systems, Inc. | Combination retrofit and new construction troffer light fixture systems and methods |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11174692A (ja) * | 1997-08-27 | 1999-07-02 | Motorola Inc | 半導体基板上のフォトレジストを除去する装置および方法 |
JPH11243085A (ja) * | 1997-11-21 | 1999-09-07 | Internatl Business Mach Corp <Ibm> | エッチング剤組成 |
JP2002246378A (ja) * | 2000-12-15 | 2002-08-30 | Toshiba Corp | 半導体装置の製造方法 |
JP2004327826A (ja) * | 2003-04-25 | 2004-11-18 | Toshiba Corp | 基板処理装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4393260B2 (ja) | 2004-04-20 | 2010-01-06 | 株式会社東芝 | エッチング液管理方法 |
KR100606187B1 (ko) * | 2004-07-14 | 2006-08-01 | 테크노세미켐 주식회사 | 반도체 기판 세정용 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법 |
-
2006
- 2006-02-07 JP JP2006029639A patent/JP4728826B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-06 US US11/702,575 patent/US7727871B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11174692A (ja) * | 1997-08-27 | 1999-07-02 | Motorola Inc | 半導体基板上のフォトレジストを除去する装置および方法 |
JPH11243085A (ja) * | 1997-11-21 | 1999-09-07 | Internatl Business Mach Corp <Ibm> | エッチング剤組成 |
JP2002246378A (ja) * | 2000-12-15 | 2002-08-30 | Toshiba Corp | 半導体装置の製造方法 |
JP2004327826A (ja) * | 2003-04-25 | 2004-11-18 | Toshiba Corp | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20070224792A1 (en) | 2007-09-27 |
US7727871B2 (en) | 2010-06-01 |
JP4728826B2 (ja) | 2011-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7256137B2 (en) | Method of forming contact plug on silicide structure | |
US9117759B2 (en) | Methods of forming bulb-shaped trenches in silicon | |
JP4598639B2 (ja) | 半導体装置の製造方法 | |
KR100685735B1 (ko) | 폴리실리콘 제거용 조성물, 이를 이용한 폴리실리콘 제거방법 및 반도체 장치의 제조 방법 | |
KR100678482B1 (ko) | 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들 | |
JP2006013506A (ja) | シリコンゲルマニウム犠牲層を用いた半導体素子の微細パターンの形成方法及びそのパターンの形成方法を用いた自己整列コンタクトの形成方法 | |
WO2012023387A1 (ja) | トランジスタの製造方法 | |
US6551913B1 (en) | Method for fabricating a gate electrode of a semiconductor device | |
JP2007081383A (ja) | 微細構造の製造方法 | |
US20100178764A1 (en) | Method for fabricating semiconductor device | |
JP2004186698A (ja) | 選択的な膜除去のための洗浄溶液及びその洗浄溶液を使用してシリサイド工程で膜を選択的に除去する方法 | |
JP2828084B2 (ja) | 半導体素子の製造方法 | |
JP4728826B2 (ja) | 半導体装置の製造方法およびエッチング液 | |
CN106486365B (zh) | 半导体器件的形成方法 | |
KR102287682B1 (ko) | 웨이퍼의 이산화규소 제거 방법 및 집적회로 제조 공정 | |
US7618894B2 (en) | Multi-step selective etching for cross-point memory | |
JP2006108268A (ja) | 強誘電体キャパシタ構造およびその作製方法 | |
JP2006190910A (ja) | 半導体装置およびその製造方法 | |
JP2004363502A (ja) | 半導体装置の製造方法 | |
JP2005302897A (ja) | ハードエッチングマスクの除去方法および半導体装置の製造方法 | |
JP2008060383A (ja) | 半導体装置の製造方法 | |
JP6083150B2 (ja) | 半導体装置の製造方法 | |
JP2011187498A (ja) | 半導体装置の製造方法 | |
JP2002217414A (ja) | 半導体装置およびその製造方法 | |
JP2002329678A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080804 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110104 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110307 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110325 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110415 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140422 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |