JP2007123711A - Adhesive sheet for semiconductor device manufacture, semiconductor device, and its manufacturing method - Google Patents

Adhesive sheet for semiconductor device manufacture, semiconductor device, and its manufacturing method Download PDF

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JP2007123711A
JP2007123711A JP2005316561A JP2005316561A JP2007123711A JP 2007123711 A JP2007123711 A JP 2007123711A JP 2005316561 A JP2005316561 A JP 2005316561A JP 2005316561 A JP2005316561 A JP 2005316561A JP 2007123711 A JP2007123711 A JP 2007123711A
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semiconductor device
adhesive sheet
adhesive
manufacturing
resin
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JP4538398B2 (en
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Atsushi Yamai
敦史 山井
Takeshi Sato
健 佐藤
Nobuhiro Hashimoto
展宏 橋本
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Tomoegawa Co Ltd
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Tomoegawa Paper Co Ltd
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Priority to JP2005316561A priority Critical patent/JP4538398B2/en
Priority to KR1020060027831A priority patent/KR100776313B1/en
Priority to SG200602019A priority patent/SG126111A1/en
Priority to MYPI20061357A priority patent/MY138686A/en
Priority to CN2008101777657A priority patent/CN101445707B/en
Priority to TW095110650A priority patent/TWI328030B/en
Publication of JP2007123711A publication Critical patent/JP2007123711A/en
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive sheet for semiconductor device manufacture which can prevent residual paste while maintaining the wire bonding property and mold flash characteristic of a thermosetting adhesive when the sheet is used in manufacture of a semiconductor device, and also can suppress an increased production rate of defective semiconductor devices, and so forth. <P>SOLUTION: The adhesive sheet for semiconductor device manufacture has a base material, and an adhesive layer containing a thermosetting resin component to be applied to a lead frame of a semiconductor device or to a wiring board. The adhesive layer contains a fluorine resin and a reactive elastomer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は半導体装置製造用接着シート及び半導体装置並びにその製造方法に関する。   The present invention relates to an adhesive sheet for manufacturing a semiconductor device, a semiconductor device, and a manufacturing method thereof.

近年、携帯型パソコン、携帯電話等の電子機器の小型化、多機能化に伴い、電子機器を構成する電子部品の小型化、高集積化の他、電子部品の高密度実装技術が必要になっている。このような背景下、従来のＱＦＰ(Quad Flat Package)やＳＯＰ(Small Outline Package)等の周辺実装型の半導体装置に代わって、高密度実装が可能なＣＳＰ(Chip Scale Pakeage)等の面実装型の半導体装置が注目されている。また、ＣＳＰの中でも特にＱＦＮ(Quad Flat Non-leaded)は、従来の半導体装置の製造技術を適用して製造できるため好適であり、主に１００ピン以下の少端子型の半導体装置として用いられている。   In recent years, along with the downsizing and multi-functionalization of electronic devices such as portable personal computers and mobile phones, it has become necessary to provide high-density mounting technology for electronic components in addition to downsizing and high integration of electronic components constituting electronic devices. ing. Under such circumstances, instead of the conventional peripheral mounting type semiconductor devices such as QFP (Quad Flat Package) and SOP (Small Outline Package), surface mounting type such as CSP (Chip Scale Pakeage) capable of high density mounting. These semiconductor devices are attracting attention. Among CSPs, QFN (Quad Flat Non-leaded) is particularly suitable because it can be manufactured by applying a conventional semiconductor device manufacturing technique, and is mainly used as a small terminal type semiconductor device having 100 pins or less. Yes.

従来、ＱＦＮの製造方法として、概略下記の方法が知られている。
はじめに、接着シート貼着工程において、リードフレームの一方の面に接着シートを貼着し、次いで、ダイアタッチ工程において、リードフレームに複数形成された半導体素子搭載部（ダイパッド部）に、ＩＣチップ等の半導体素子を各々搭載する。次に、ワイヤボンディング工程において、リードフレームの各半導体素子搭載部の外周に沿って配設された複数のリードと半導体素子とをボンディングワイヤにより電気的に接続する。次に、樹脂封止工程において、リードフレームに搭載された半導体素子を封止樹脂により封止する。その後、接着シート剥離工程において、接着シートをリードフレームから剥離することにより、複数のＱＦＮが配列されたＱＦＮユニットを形成することができる。最後に、ダイシング工程において、このＱＦＮユニットを各ＱＦＮの外周に沿ってダイシングすることにより、複数のＱＦＮを同時に製造することができる。 Conventionally, the following methods are generally known as methods for producing QFN.
First, in the adhesive sheet attaching step, an adhesive sheet is attached to one surface of the lead frame, and then in the die attach step, a plurality of semiconductor element mounting portions (die pad portions) formed on the lead frame are attached to an IC chip or the like. Each semiconductor element is mounted. Next, in the wire bonding step, the plurality of leads arranged along the outer periphery of each semiconductor element mounting portion of the lead frame and the semiconductor elements are electrically connected by bonding wires. Next, in the resin sealing step, the semiconductor element mounted on the lead frame is sealed with a sealing resin. Thereafter, in the adhesive sheet peeling step, the QFN unit in which a plurality of QFNs are arranged can be formed by peeling the adhesive sheet from the lead frame. Finally, in the dicing process, a plurality of QFNs can be manufactured simultaneously by dicing the QFN units along the outer periphery of each QFN.

従来、上記概略説明したＱＦＮの製造方法においては、シリコーン粘着剤やアクリル粘着剤を使用した接着シートが使用されてきた。しかし、シリコーン粘着剤に起因して、モールドフラッシュの問題が生じることがあった（例えば、特許文献１参照。）。
特開２０００−２９４５７９号公報 Conventionally, in the QFN manufacturing method outlined above, an adhesive sheet using a silicone pressure-sensitive adhesive or an acrylic pressure-sensitive adhesive has been used. However, a mold flash problem may occur due to the silicone adhesive (see, for example, Patent Document 1).
JP 2000-294579 A

ところで、ワイヤボンディング工程前にプラズマクリーニングを実施して、表面に付着した不純物を除去することにより、ワイヤボンディング特性をさらに向上させることが一般化している。
しかしながら、上記構成の従来の半導体装置製造用接着シートを用いた場合、半導体装置製造用接着シートの接着剤露出面表層がプラズマクリーニングにより粗化され、半導体用接着シートの剥離時に、半導体装置の接続端子、封止樹脂面への接着剤移行（以下「糊残り」と表記することがある）が発生することがあった。このような糊残りが発生した場合に、封止樹脂により封止した部分や、その近傍のリードの外部接続端子部分に接着剤が付着するため、製造された半導体装置を配線基板等に実装する際に、接続不良が発生する恐れがあった。 By the way, it is common to further improve wire bonding characteristics by performing plasma cleaning before the wire bonding step to remove impurities adhering to the surface.
However, when the conventional adhesive sheet for manufacturing a semiconductor device having the above-described configuration is used, the surface of the adhesive exposed surface of the adhesive sheet for manufacturing a semiconductor device is roughened by plasma cleaning, and the semiconductor device is connected when the adhesive sheet for semiconductor is peeled off. Adhesive transfer to the terminal and the sealing resin surface (hereinafter sometimes referred to as “glue residue”) may occur. When such adhesive residue occurs, the adhesive adheres to the portion sealed with the sealing resin and the external connection terminal portion of the lead in the vicinity thereof, so the manufactured semiconductor device is mounted on a wiring board or the like. In some cases, connection failure may occur.

本発明は前記課題を解決するためになされたもので、ＱＦＮ等の半導体装置の製造に用いた場合に、モールドフラッシュ特性を防止することができ、かつ糊残りを防止することができ、これにより半導体装置の不良品化を防止することができる半導体装置製造用接着シート及び半導体装置並びにその製造方法を提供することを目的とする。   The present invention has been made to solve the above-described problems, and when used in the manufacture of a semiconductor device such as QFN, it can prevent mold flash characteristics and prevent adhesive residue, thereby It is an object of the present invention to provide an adhesive sheet for manufacturing a semiconductor device, a semiconductor device, and a method for manufacturing the same, which can prevent a defective semiconductor device.

前記課題を解決するために、本発明の第１の態様は、基材と、接着剤層とを有し、かつ半導体装置のリードフレームまたは配線基板に剥離可能に貼着される半導体装置製造用接着シートにおいて、前記接着剤層はフッ素樹脂及び反応性エラストマーを含有することを特徴とする半導体装置製造用接着シートである。
前記フッ素樹脂は、フルオロオレフィンとビニルエーテルを含むモノマー原料を重合させてなる共重合体及び／またはフルオロオレフィンとビニルエステルを含むモノマー原料を重合させてなる共重合体であることが好ましい。
前記反応性エラストマーは、無水マレイン酸含有スチレン−エチレン−ブチレン共重合体であることが好ましい。
また、接着剤層の片面に保護フィルムが設けられていると好ましい。 In order to solve the above-mentioned problems, a first aspect of the present invention is for manufacturing a semiconductor device having a base material and an adhesive layer and detachably attached to a lead frame or a wiring board of the semiconductor device. The adhesive sheet is an adhesive sheet for manufacturing a semiconductor device, wherein the adhesive layer contains a fluororesin and a reactive elastomer.
The fluororesin is preferably a copolymer obtained by polymerizing a monomer raw material containing fluoroolefin and vinyl ether and / or a copolymer obtained by polymerizing a monomer raw material containing fluoroolefin and vinyl ester.
The reactive elastomer is preferably a maleic anhydride-containing styrene-ethylene-butylene copolymer.
Moreover, it is preferable when the protective film is provided in the single side | surface of the adhesive bond layer.

本発明の第２の態様は、本発明の半導体装置製造用接着シートを用いて製造されたことを特徴とする半導体装置である。
本発明の第３の態様は、本発明の半導体装置製造用接着シートを用いて製造することを特徴とする半導体装置の製造方法である。 A second aspect of the present invention is a semiconductor device manufactured using the adhesive sheet for manufacturing a semiconductor device of the present invention.
According to a third aspect of the present invention, there is provided a method for manufacturing a semiconductor device, characterized by manufacturing using the adhesive sheet for manufacturing a semiconductor device of the present invention.

本発明の半導体装置製造用接着シートにおいては、接着剤層がプラズマクリーニングに曝されても、適切な剥離性を保持し、糊残りが発生しないため、本発明の接着シートを用いて、ＱＦＮ等の半導体装置を製造することにより、モールドフラッシュはもとより、糊残りを防止することができ、半導体装置の不良品化を防止できる。   In the adhesive sheet for manufacturing a semiconductor device according to the present invention, even if the adhesive layer is exposed to plasma cleaning, appropriate peelability is maintained and no adhesive residue is generated. By manufacturing this semiconductor device, not only mold flash but also adhesive residue can be prevented, and defective semiconductor devices can be prevented.

以下、本発明について詳述する。
本発明の接着シートは、半導体装置のリードフレームまたは配線基板に剥離可能に貼着されるものである。ここで、リードフレームとは、金属板をエッチング又はプレス等により導体パターンを形成したものであり、配線基板とは、電気絶縁性基板の表面（または内面を含むことがある）に、導体パターンを導電性材料で形成し、固着したもののことである。
尚、以下の説明では、便宜的に、リードフレームを貼着対象として説明するが、配線基板に対しても同様である。 Hereinafter, the present invention will be described in detail.
The adhesive sheet of the present invention is detachably attached to a lead frame or a wiring board of a semiconductor device. Here, the lead frame is a conductor plate formed by etching or pressing a metal plate, and the wiring board is a conductor pattern formed on the surface (or may include the inner surface) of an electrically insulating substrate. It is made of a conductive material and fixed.
In the following description, for the sake of convenience, the description will be made with the lead frame as an object to be adhered, but the same applies to the wiring board.

本発明の接着シートは、基材と、接着剤層とを有するものである。
基材としては、耐熱性のあるもの、例えば、耐熱性樹脂フィルムや金属箔等を挙げることができる。
本発明の接着シートを用いてＱＦＮ等の半導体装置を製造する際に、接着シートは、ダイアタッチ工程、ワイヤボンディング工程、樹脂封止工程において、１５０〜２５０℃の高温に曝されるが、基材として耐熱性樹脂フィルムを用いる場合、該耐熱性フィルムの熱膨張係数はガラス転移温度（Ｔｇ）以上になると急激に増加し、金属製のリードフレームとの熱膨張差が大きくなるため、室温に戻した際に、耐熱性フィルムとリードフレームに反りが発生する恐れがある。そして、このように、耐熱性フィルムとリードフレームに反りが発生した場合には、樹脂封止工程において、金型の位置決めピンにリードフレームを装着することができず、位置ずれ不良を起こす恐れがある。
したがって、基材として耐熱性フィルムを用いる場合、ガラス転移温度が１５０℃以上の耐熱性フィルムであることが好ましく、更に１８０℃以上であることがより好ましい。
また、耐熱性フィルムの１５０〜２５０℃における熱膨張係数が５〜５０ｐｐｍ／℃であることが好ましく、更に１０〜３０ｐｐｍ／℃であることがより好ましい。かかる特性を有する耐熱性フィルムとしては、ポリイミド、ポリアミド、ポリエーテルサルフォン、ポリフェニレンサルファイド、ポリエーテルケトン、ポリエーテルエーテルケトン、トリアセチルセルロース、ポリエーテルイミド等からなるフィルムを例示することができる。 The adhesive sheet of the present invention has a base material and an adhesive layer.
As a base material, what has heat resistance, for example, a heat resistant resin film, metal foil, etc. can be mentioned.
When manufacturing a semiconductor device such as QFN using the adhesive sheet of the present invention, the adhesive sheet is exposed to a high temperature of 150 to 250 ° C. in a die attach process, a wire bonding process, and a resin sealing process. When a heat-resistant resin film is used as the material, the thermal expansion coefficient of the heat-resistant film increases rapidly when the glass transition temperature (Tg) or higher, and the difference in thermal expansion from the metal lead frame increases. When returned, the heat resistant film and the lead frame may be warped. If the heat-resistant film and the lead frame are warped as described above, the lead frame cannot be mounted on the positioning pins of the mold in the resin sealing process, which may cause misalignment. is there.
Therefore, when a heat resistant film is used as the substrate, the glass transition temperature is preferably 150 ° C. or higher, more preferably 180 ° C. or higher.
Moreover, it is preferable that the thermal expansion coefficient in 150-250 degreeC of a heat resistant film is 5-50 ppm / degreeC, and it is more preferable that it is 10-30 ppm / degreeC. Examples of the heat resistant film having such characteristics include films made of polyimide, polyamide, polyether sulfone, polyphenylene sulfide, polyether ketone, polyether ether ketone, triacetyl cellulose, polyether imide, and the like.

また、基材として金属箔を用いる場合においても、前記耐熱性フィルムと同様の理由から、金属箔の１５０〜２５０℃における熱膨張係数が５〜５０ｐｐｍ／℃であることが好ましく、更に１０〜３０ｐｐｍ／℃であることがより好ましい。金属としては、金、銀、銅、白金、アルミニウム、マグネシウム、チタン、クロム、マンガン、鉄、コバルト、ニッケル、亜鉛、パラジウム、カドミウム、インジウム、錫、鉛からなる箔や、これらの金属を主成分とした合金箔、あるいはこれらのメッキ箔を例示することができる。   Moreover, also when using metal foil as a base material, it is preferable that the thermal expansion coefficient in 150-250 degreeC of metal foil is 5-50 ppm / degrees C for the same reason as the said heat resistant film, and also 10-30 ppm. / ° C is more preferable. Metals include gold, silver, copper, platinum, aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, zinc, palladium, cadmium, indium, tin, lead, and these metals as the main components. Examples of the alloy foils or the plating foils thereof can be given.

また、本発明の接着シートを用いて半導体装置を製造する際に、接着シート剥離工程における糊残りを防止するためには、基材と接着剤層との接着強度Ｓａと、封止樹脂及びリードフレームと接着剤層との接着強度Ｓｂとの比（接着強度比）Ｓａ／Ｓｂが１.５以上であることが好ましい。Ｓａ／Ｓｂが１.５未満の場合では、接着シート剥離工程において糊残りが発生しやすいため好ましくない。なお、接着強度比Ｓａ／Ｓｂを１.５以上とするためには、耐熱性フィルムの場合には、接着剤層を形成する前に、耐熱性フィルムの接着剤層を形成する側の表面に、コロナ処理、プラズマ処理、プライマー処理、サンドブラスト等の、耐熱性フィルムと接着剤層との接着強度Ｓａを高くするような処理をあらかじめ施しておくことが好適である。また、金属箔の場合では、その製法から圧延金属箔と電解金属箔とに分類されるが、接着強度比Ｓａ／Ｓｂを１.５以上とするために、電解金属箔を用いると共に粗面化された側の面に接着剤層を設けて調整することが好ましい。また、電解金属箔の中でも特に、電解銅箔を用いることが特に好ましい。
また、リードフレームに対する接着剤層の硬化後の１５０〜２００℃における接着強度が０.０３〜５Ｎ／ｃｍであることがモールドフラッシュを防止できるので好ましい。０.０３Ｎ／ｃｍ未満では、モールドフラッシュが発生し易く、５Ｎ／ｃｍ超では糊残りが生じやすい。また、リードフレームに対する接着剤層の未硬化における常温の接着強度は０.９８Ｎ／ｃｍ以上であることが製造工程上、好ましい。０.９８Ｎ／ｃｍ未満では、製造工程における搬送時にリードフレームから接着剤層が剥離し易くなるからである。 Further, when manufacturing a semiconductor device using the adhesive sheet of the present invention, in order to prevent adhesive residue in the adhesive sheet peeling step, the adhesive strength Sa between the base material and the adhesive layer, the sealing resin, and the lead The ratio (adhesive strength ratio) Sa / Sb of the adhesive strength Sb between the frame and the adhesive layer is preferably 1.5 or more. When Sa / Sb is less than 1.5, an adhesive residue is likely to occur in the adhesive sheet peeling step, which is not preferable. In order to set the adhesive strength ratio Sa / Sb to 1.5 or more, in the case of a heat resistant film, before forming the adhesive layer, on the surface of the heat resistant film on the side where the adhesive layer is formed. It is preferable that a treatment for increasing the adhesive strength Sa between the heat-resistant film and the adhesive layer, such as corona treatment, plasma treatment, primer treatment, and sand blasting, is performed in advance. In the case of a metal foil, it is classified into a rolled metal foil and an electrolytic metal foil depending on the production method. In order to make the adhesive strength ratio Sa / Sb 1.5 or more, the electrolytic metal foil is used and the surface is roughened. It is preferable to adjust by providing an adhesive layer on the surface on the formed side. Moreover, it is especially preferable to use electrolytic copper foil among electrolytic metal foils.
Further, the adhesive strength at 150 to 200 ° C. after curing of the adhesive layer to the lead frame is preferably 0.03 to 5 N / cm because mold flash can be prevented. If it is less than 0.03 N / cm, mold flash tends to occur, and if it exceeds 5 N / cm, adhesive residue tends to occur. In addition, the adhesive strength at room temperature when the adhesive layer is not cured with respect to the lead frame is preferably 0.98 N / cm or more in the manufacturing process. If it is less than 0.98 N / cm, the adhesive layer easily peels off from the lead frame during conveyance in the manufacturing process.

半導体装置を製造するための樹脂封止工程においては、１５０〜２００℃に加熱しながら、５〜１０ＧＰａの圧力をかけて半導体素子を樹脂封止により封止する。そのため、接着シートの接着剤層が高温に曝される結果、接着剤層の接着力（接着剤層とリードフレームとの接着強度）が低下し、封止樹脂の圧力により、接着剤層がリードフレームから部分的に剥離してモールドフラッシュが発生する場合があるが、本発明の接着シートでは、接着剤層の接着力がより低下しないため上記問題は生じない。   In the resin sealing step for manufacturing the semiconductor device, the semiconductor element is sealed by resin sealing while applying a pressure of 5 to 10 GPa while being heated to 150 to 200 ° C. Therefore, as a result of the adhesive layer of the adhesive sheet being exposed to high temperature, the adhesive strength of the adhesive layer (adhesive strength between the adhesive layer and the lead frame) is reduced, and the adhesive layer is lead by the pressure of the sealing resin. In some cases, the mold flash may occur due to partial peeling from the frame. However, in the adhesive sheet of the present invention, the above problem does not occur because the adhesive strength of the adhesive layer is not further reduced.

本発明におけるフッ素樹脂としては、二フッ化ビニリデン、ヘキサフルオロプロピレン、テトラフルオロエチレン、パーフルオロメチルビニルエーテル等のオレフィン系樹脂に官能基（反応性基）を有するモノマーを含有（共重合）させた重合体またはそれらの２種類以上を組み合わせた共重合体等を例示することができる。更にエチレンやプロピレン、アルキルビニルエーテル等を加えて重合させてなる共重合体でも良い。これらの中でも特に官能基を有するフッ素含有オレフィン系樹脂が含有するフッ素量が多くワイヤボンディング前のプラズマクリーニングへの耐性が高いことからより好ましい。     As the fluororesin in the present invention, a heavy resin containing (copolymerizing) a monomer having a functional group (reactive group) in an olefin resin such as vinylidene difluoride, hexafluoropropylene, tetrafluoroethylene, and perfluoromethyl vinyl ether. Examples thereof include a combination or a copolymer obtained by combining two or more thereof. Furthermore, a copolymer obtained by adding ethylene, propylene, alkyl vinyl ether, or the like to be polymerized may be used. Among these, the fluorine-containing olefin resin having a functional group is particularly preferable because it contains a large amount of fluorine and has high resistance to plasma cleaning before wire bonding.

さらに具体的には、（１）フルオロオレフィンと、（２）ビニルエーテル、ビニルエステル等の炭化水素系モノマーとを含むモノマー原料を重合させてなる共重合体であり、かつ水酸基、カルボキシ基、エポキシ基等の官能基を有するフッ素樹脂が挙げられる。
なお、本明細書及び特許請求の範囲において、「フルオロオレフィン」はオレフィンの水素原子の一部または全部がフッ素原子で置換されているものを包含する概念とする。例えばオレフィンの水素原子の一部または全部がフッ素原子で置換されている化合物と、下記に例示する様に、オレフィンの水素原子がフッ素原子で置換されるとともに、残りの水素原子の一部または全部が塩素原子等の他の原子で置換されている化合物とを包含する概念とする。
前記官能基を有するフッ素樹脂は、例えば原料モノマーに、上記（１）と（２）のモノマーに加えて、官能基を有するモノマーを配合し、共重合させることによって得ることができる。またビニル基等の不飽和結合を有するフッ素樹脂を製造した後、このビニル基等の不飽和結合にエポキシ基等の官能基を導入することによって得ることができる。
官能基を有するモノマーとしては、例えばアクリル酸、メタクリル酸等のビニル結合と官能基を有するモノマーを挙げることができる。
この様なフッ素樹脂は、各種製品が販売されている。 More specifically, it is a copolymer obtained by polymerizing a monomer raw material containing (1) a fluoroolefin and (2) a hydrocarbon monomer such as vinyl ether or vinyl ester, and is a hydroxyl group, a carboxy group, or an epoxy group. Fluorine resin having a functional group such as
In the present specification and claims, the term “fluoroolefin” includes a concept in which part or all of the hydrogen atoms of the olefin are substituted with fluorine atoms. For example, a compound in which some or all of the hydrogen atoms of the olefin are substituted with fluorine atoms and, as exemplified below, the hydrogen atoms of the olefin are substituted with fluorine atoms, and some or all of the remaining hydrogen atoms And a compound substituted with another atom such as a chlorine atom.
The fluororesin having a functional group can be obtained, for example, by blending a monomer having a functional group with a raw material monomer in addition to the monomers (1) and (2) and copolymerizing the monomer. Moreover, after manufacturing the fluororesin which has unsaturated bonds, such as a vinyl group, it can obtain by introduce | transducing functional groups, such as an epoxy group, into this unsaturated bond, such as a vinyl group.
Examples of the monomer having a functional group include monomers having a vinyl bond and a functional group such as acrylic acid and methacrylic acid.
Various products are sold as such fluororesins.

この中でも特にモールド樹脂漏れ防止及び糊残りなく剥離可能とできるため、フルオロオレフィンとビニルエーテルを含むモノマー原料を重合させてなる共重合体及び／またはフルオロオレフィンとビニルエステルを含むモノマー原料を重合させてなる共重合体であり、かつ水酸基、カルボキシ基、エポキシ基等の官能基を有するフッ素樹脂が好ましい。   Among these, in particular, it can prevent mold resin leakage and can be peeled without adhesive residue. Therefore, a copolymer obtained by polymerizing a monomer raw material containing fluoroolefin and vinyl ether and / or a monomer raw material containing fluoroolefin and vinyl ester is polymerized. A fluororesin that is a copolymer and has a functional group such as a hydroxyl group, a carboxy group, or an epoxy group is preferable.

さらに好適なものとして、具体的には、（１）−１ トリフルオロエチレンと、（２）−１ シクロヘキシルビニルエーテル、アルキルビニルエーテル、及びヒドロキシアルキルビニルエーテルから選ばれる１種以上のモノマーを共重合させてなる共重合体であって、かつ官能基を有する樹脂；
（１）−２ トリフルオロエチレンと、（２）−２ アルキルビニルエーテル及びアリルアルコールから選ばれる１種以上のモノマーを共重合させてなる共重合体であって、かつ官能基を有する樹脂；
（１）−３ トリフルオロエチレンと、（２）−３ 脂肪族カルボン酸ビニルエステル、及びヒドロキシアルキルビニルエステルから選ばれる１種以上のモノマーを共重合させてなる共重合体であって、かつ官能基を有する樹脂等が挙げられる。 More specifically, (1) -1 trifluoroethylene is copolymerized with one or more monomers selected from (2) -1 cyclohexyl vinyl ether, alkyl vinyl ether, and hydroxyalkyl vinyl ether. A resin which is a copolymer and has a functional group;
(1) -2 A copolymer obtained by copolymerizing trifluoroethylene with one or more monomers selected from (2) -2 alkyl vinyl ether and allyl alcohol, and having a functional group;
A copolymer obtained by copolymerizing (1) -3 trifluoroethylene, one or more monomers selected from (2) -3 aliphatic carboxylic acid vinyl ester and hydroxyalkyl vinyl ester, and functionally Examples thereof include a resin having a group.

この中で市販されているものとしては、例えば官能基を有するフルオロエチレンビニルエーテル共重合体（旭硝子社製 商品名：ルミフロン；官能基は水酸基やカルボキシ基）等を挙げることができる。
上記例示したフッ素樹脂の配合量は接着剤層１００質量部に対して好ましくは５〜４０量部、より好ましくは２０〜３０質量部であることが好ましい。５質量部以上にすることにより、より剥離性が向上し、糊残りを防ぐことができる。一方、４０質量部以下であることにより、他の樹脂成分との相溶性が向上し、製造上有利である。
なお、フッ素樹脂は１種または２種以上混合して用いることができる。 Examples of such commercially available products include a fluoroethylene vinyl ether copolymer having a functional group (trade name: Lumiflon manufactured by Asahi Glass Co., Ltd .; the functional group is a hydroxyl group or a carboxy group).
The blending amount of the exemplified fluororesin is preferably 5 to 40 parts by weight, more preferably 20 to 30 parts by weight with respect to 100 parts by weight of the adhesive layer. By setting it as 5 mass parts or more, peelability improves more and adhesive residue can be prevented. On the other hand, when the amount is 40 parts by mass or less, compatibility with other resin components is improved, which is advantageous in production.
In addition, a fluororesin can be used 1 type or in mixture of 2 or more types.

本発明において、更に剥離力を向上させる必要がある場合は、フッ素系添加剤を接着剤層に含有させることもできる。フッ素系添加剤としては、含フッ素グラフトポリマー、含フッ素ブロックコポリマー、含フッ素脂肪族系ポリマーエステル（これらはオリゴマーであってもよい）等を挙げることができる。
含フッ素グラフトポリマーとしては、含フッ素アクリル系グラフトポリマーである綜研化学社製の商品名：ケミトリー ＬＦ−７００等を挙げることができる。なお、含フッ素アクリル系グラフトポリマーは、幹ポリマーと、この幹ポリマーから伸びる複数の枝ポリマーとからなり、幹ポリマーはアクリル系ポリマーからなり、枝ポリマーはフッ素を含有するポリマーからなるものである。
含フッ素ブロックコポリマーとしては、フッ化アルキル基含有重合体セグメントとアクリル系重合体セグメントからなるブロックコポリマーが、日本油脂社製の商品名：モディパーＦシリーズ、例えばモディパーＦ２００、モディパーＦ２２０、モディパーＦ２０２０、モディパーＦ３０３５、モディパーＦ６００として市販されている。
また、含フッ素脂肪族系ポリマーエステルとしては、ノニオン界面活性剤としての特性を有するものが好ましく、スリーエム社製の商品名：ノベック ＦＣ−４４３０等を挙げることができる。
この中でも特にモールド樹脂漏れ防止及び糊残りなく剥離可能とできるため含フッ素グラフトポリマーまたは含フッ素ブロックコポリマーが好ましい。 In the present invention, when it is necessary to further improve the peeling force, a fluorine-based additive may be contained in the adhesive layer. Examples of the fluorine-based additive include a fluorine-containing graft polymer, a fluorine-containing block copolymer, a fluorine-containing aliphatic polymer ester (these may be oligomers) and the like.
As the fluorine-containing graft polymer, trade name: Chemitry LF-700 manufactured by Soken Chemical Co., Ltd., which is a fluorine-containing acrylic graft polymer, can be exemplified. The fluorine-containing acrylic graft polymer is composed of a trunk polymer and a plurality of branch polymers extending from the trunk polymer, the trunk polymer is composed of an acrylic polymer, and the branch polymer is composed of a polymer containing fluorine.
As the fluorine-containing block copolymer, a block copolymer comprising a fluorinated alkyl group-containing polymer segment and an acrylic polymer segment is a product name manufactured by NOF Corporation: Modiper F series, for example, Modiper F200, Modiper F220, Modiper F2020, Modiper. F3035 and Modiper F600 are commercially available.
Moreover, as a fluorine-containing aliphatic polymer ester, what has the characteristic as a nonionic surfactant is preferable, and the brand name: Novec FC-4430 etc. by 3M Corporation can be mentioned.
Among these, a fluorine-containing graft polymer or a fluorine-containing block copolymer is particularly preferable because it can prevent mold resin leakage and can be peeled without adhesive residue.

反応性エラストマーとしては、カルボキシ基、アミノ基、ビニル基、エポキシ基等の官能基やマレイン酸無水物等の酸無水物モノマーから誘導される構成単位を有することにより、反応性を有する弾性樹脂である。
反応性エラストマーは、弾性樹脂を製造する際に官能基を有するモノマーや酸無水物モノマーを共重合させることによって製造することができる。また、ビニル結合等の不飽和結合を有する弾性樹脂を製造した後、このビニル基等の不飽和結合にエポキシ基等の官能基を導入することによって製造することができる。なお、官能基を有するモノマーとしては、例えばアクリル酸、メタクリル酸等のビニル結合と官能基を有するモノマーを挙げることができる。 The reactive elastomer is an elastic resin having reactivity by having a structural unit derived from a functional group such as carboxy group, amino group, vinyl group, epoxy group, or acid anhydride monomer such as maleic anhydride. is there.
The reactive elastomer can be produced by copolymerizing a monomer having a functional group or an acid anhydride monomer when producing an elastic resin. Moreover, after manufacturing the elastic resin which has unsaturated bonds, such as a vinyl bond, it can manufacture by introduce | transducing functional groups, such as an epoxy group, into unsaturated bonds, such as this vinyl group. In addition, as a monomer which has a functional group, the monomer which has vinyl bonds and functional groups, such as acrylic acid and methacrylic acid, can be mentioned, for example.

具体的には、カルボキシ基含有スチレン−ブタジエン共重合体、カルボキシ基含有スチレン−イソプレン共重合体、カルボキシ基含有スチルン−ブタジエン飽和共重合体、カルボキシ基含有スチレン−イソプレン飽和共重合体、カルボキシ基含有スチレン−エチレン−ブテン−スチレン共重合体、カルボキシ基含有スチレン−エチレン−ブテン−スチレン飽和共重合体、カルボキシ基含有アクリロニトリル−ブタジエン共重合体、アミノ基変性ポリオール樹脂、アミノ基変性フェノキシ樹脂、アミノ基変性アクリロニトリル−ブタジエン共重合体、ポリビニルブチラール樹脂、ポリビニルアセタール樹脂、カルボキシ基含有アクリロニトリル−ブタジエン共重合体、水添カルボキシ基含有アクリロニトリル−ブタジエン共重合体、カルボキシ基含有アクリルゴム、無水マレイン酸含有スチレン−ブタジエン共重合体、無水マレイン酸含有スチレン−エチレン−ブテン−スチレン共重合体、ヒドロキシ基末端飽和共重合ポリエステル樹脂、カルボキシ基末端飽和共重合体ポリエステル樹脂、エポキシ基含有スチレン系ブロック共重合体、無水マレイン酸含有スチレン―エチレン―ブチレン共重合体等が挙げられる。なお、「無水マレイン酸含有」とは、無水マレイン酸を共重合したものであることを示す。   Specifically, carboxy group-containing styrene-butadiene copolymer, carboxy group-containing styrene-isoprene copolymer, carboxy group-containing stilin-butadiene saturated copolymer, carboxy group-containing styrene-isoprene saturated copolymer, carboxy group-containing Styrene-ethylene-butene-styrene copolymer, carboxy group-containing styrene-ethylene-butene-styrene saturated copolymer, carboxy group-containing acrylonitrile-butadiene copolymer, amino group-modified polyol resin, amino group-modified phenoxy resin, amino group Modified acrylonitrile-butadiene copolymer, polyvinyl butyral resin, polyvinyl acetal resin, carboxy group-containing acrylonitrile-butadiene copolymer, hydrogenated carboxy group-containing acrylonitrile-butadiene copolymer, carboxy -Containing acrylic rubber, maleic anhydride-containing styrene-butadiene copolymer, maleic anhydride-containing styrene-ethylene-butene-styrene copolymer, hydroxy-terminated saturated copolymer polyester resin, carboxy-terminated saturated copolymer polyester resin, epoxy Examples thereof include a group-containing styrene block copolymer and a maleic anhydride-containing styrene-ethylene-butylene copolymer. “Maleic anhydride-containing” indicates that maleic anhydride is copolymerized.

この中で市販されているものとしては次のものが挙げられる。
カルボキシ基含有アクリロニトリル−ブタジエン共重合体としては、日本ゼオン社製 商品名：Ｎｉｐｏｌ １０７２Ｊ、同社製 商品名：Ｎｉｐｏｌ ＤＮ６３１、宇部興産社製 商品名：Ｈｙｃａｒ ＣＴＢＮ、ＪＳＲ社製 商品名：ＰＮＲ−１Ｈ等が挙げられる。
アミノ基含有アクリロニトリル−ブタジエン共重合体としては、宇部興産社製 商品名：Ｈｙｃａｒ ＡＴＢＮ等が挙げられる。
無水マレイン酸含有スチレン−エチレン−ブタジエン共重合体としては、旭化成社製 商品名：タフテックＭシリーズ等が挙げられる。
エポキシ基含有スチレン系ブロック共重合体としては、ダイセル化学工業社製 商品名：エポフレンド等が挙げられる。
この中でも特にモールド樹脂漏れ防止及び糊残りなく剥離可能とできるため無水マレイン酸含有スチレン―エチレン―ブチレン共重合体が好ましい。当該共重合体において、無水マレイン酸：スチレン：エチレン―ブチレン（エチレン−ブチレンの合計）の質量比は、好ましくは０．３〜３：１０〜４０：６０〜９０、さらに好ましくは０．５〜１：２０〜３０：７０〜８０であることが好ましい。 The following are mentioned as what is marketed in this.
As a carboxy group-containing acrylonitrile-butadiene copolymer, product name: Nipol 1072J, manufactured by Nippon Zeon Co., Ltd. product name: Nipol DN631, manufactured by Ube Industries, Ltd. Product name: Hycar CTBN, manufactured by JSR Co., Ltd. Is mentioned.
As an amino group-containing acrylonitrile-butadiene copolymer, Ube Industries, Ltd. brand name: Hycar ATBN etc. are mentioned.
Examples of maleic anhydride-containing styrene-ethylene-butadiene copolymers include Asahi Kasei Co., Ltd. trade name: Tuftec M series.
As an epoxy group containing styrene type block copolymer, Daicel Chemical Industries Ltd. brand name: Epofriend etc. are mentioned.
Among these, maleic anhydride-containing styrene-ethylene-butylene copolymer is particularly preferable because it can prevent mold resin leakage and can be peeled off without adhesive residue. In the copolymer, the mass ratio of maleic anhydride: styrene: ethylene-butylene (total of ethylene-butylene) is preferably 0.3-3: 10-40: 60-90, more preferably 0.5- It is preferable that it is 1: 20-30: 70-80.

反応性エラストマーは１種または２種以上混合して用いることができる。
反応性エラストマーは接着剤層１００質量部に対して好ましくは３０〜９５質量部、さらに好ましくは４０〜９０質量部用いられる。３０質量部以上にすることによりモールドフラッシュや糊残りをより防ぐことができる。一方、９５質量部以下にすることにより、より剥離性が向上し、糊残りを生じにくくすることができる。 The reactive elastomer can be used alone or in combination of two or more.
The reactive elastomer is preferably used in an amount of 30 to 95 parts by weight, more preferably 40 to 90 parts by weight, based on 100 parts by weight of the adhesive layer. By setting it to 30 parts by mass or more, mold flash and adhesive residue can be further prevented. On the other hand, by setting it as 95 mass parts or less, peelability can improve more and it can make it difficult to produce adhesive residue.

また、接着剤層には、熱硬化性樹脂、熱可塑性樹脂、フッ素樹脂及び反応性エラストマーと架橋する硬化剤、脱水触媒等の硬化促進剤を含有させてもよい。
熱硬化性樹脂成分としては、尿素樹脂、メラミン樹脂、ベンゾグアナミン樹脂、アセトグアナミン樹脂、フェノール樹脂、レゾルシノール樹脂、キシレン樹脂、フラン樹脂、不飽和ポリエステル樹脂、ジアリルフタレート樹脂、イソシアナート樹脂、エポキシ樹脂、マレイミド樹脂、ナジイミド樹脂等を例示することができる。なお、これらの樹脂は単独で用いても良いし、２種以上を併用しても良い。この中でもエポキシ樹脂とフェノール樹脂の少なくとも１種を含有することによって、ワイヤボンディング工程における処理温度下で高弾性率を有すると共に、樹脂封止工程における処理温度下でリードフレームとの接着強度が高い接着剤層が得られるため好ましい。 The adhesive layer may contain a curing accelerator such as a thermosetting resin, a thermoplastic resin, a fluororesin, a curing agent that crosslinks with the reactive elastomer, and a dehydration catalyst.
Thermosetting resin components include urea resin, melamine resin, benzoguanamine resin, acetoguanamine resin, phenol resin, resorcinol resin, xylene resin, furan resin, unsaturated polyester resin, diallyl phthalate resin, isocyanate resin, epoxy resin, maleimide Examples thereof include a resin and a nadiimide resin. In addition, these resin may be used independently and may use 2 or more types together. Among these, by containing at least one of an epoxy resin and a phenol resin, it has a high elastic modulus at the processing temperature in the wire bonding process and has a high adhesive strength with the lead frame at the processing temperature in the resin sealing process. Since an agent layer is obtained, it is preferable.

熱可塑性樹脂成分としては、アクリロニトリル−ブタジエン共重合体（ＮＢＲ）、アクロロニトリル−ブタジエン−スチレン樹脂（ＡＢＳ）、スチレン−ブタジエン−エチレン樹脂（ＳＥＢＳ）、スチレン−ブタジエン−スチレン樹脂（ＳＢＳ）、ポリブタジエン、ポリアクリロニトリル、ポリビニルブチラール、ポリアミド、ポリアミドイミド、ポリイミド、ポリエステル、ポリウレタン、アクリルゴム等が例示できる。     Examples of the thermoplastic resin component include acrylonitrile-butadiene copolymer (NBR), acrylonitrile-butadiene-styrene resin (ABS), styrene-butadiene-ethylene resin (SEBS), styrene-butadiene-styrene resin (SBS), and polybutadiene. And polyacrylonitrile, polyvinyl butyral, polyamide, polyamideimide, polyimide, polyester, polyurethane, acrylic rubber and the like.

また、接着剤層の熱膨張係数、熱伝導率、表面タック、接着性等を調整するために、接着剤層に無機、または有機フィラーを添加することが好ましい。ここで、無機フィラーとしては、粉砕型シリカ、溶融型シリカ、アルミナ、酸化チタン、酸化ベリリウム、酸化マグネシウム、炭酸カルシウム、窒化チタン、窒化珪素、窒化硼素、硼化チタン、硼化タングステン、炭化珪素、炭化チタン、炭化ジルコニウム、炭化モリブデン、マイカ、酸化亜鉛、カーボンブラック、水酸化アルミニウム、水酸化カルシウム、水酸化マグネシウム、三酸化アンチモン等からなるフィラー、あるいはこれらの表面にトリメチルシロキシル基等を導入したもの等を例示することができる。また、有機フィラーとしては、ポリイミド、ポリアミドイミド、ポリエーテルエーテルケトン、ポリエーテルイミド、ポリエステルイミド、ナイロン、シリコーン樹脂等からなるフィラーを例示することができる。   In order to adjust the thermal expansion coefficient, thermal conductivity, surface tack, adhesiveness, etc. of the adhesive layer, it is preferable to add an inorganic or organic filler to the adhesive layer. Here, as the inorganic filler, pulverized silica, fused silica, alumina, titanium oxide, beryllium oxide, magnesium oxide, calcium carbonate, titanium nitride, silicon nitride, boron nitride, titanium boride, tungsten boride, silicon carbide, Filler made of titanium carbide, zirconium carbide, molybdenum carbide, mica, zinc oxide, carbon black, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, antimony trioxide or the like, or a trimethylsiloxyl group or the like is introduced on the surface thereof. The thing etc. can be illustrated. Moreover, as an organic filler, the filler which consists of a polyimide, polyamideimide, polyetheretherketone, polyetherimide, polyesterimide, nylon, a silicone resin etc. can be illustrated.

基材の一方の面に接着剤層を形成する方法としては、基材上に直接接着剤を塗布し、乾燥させるキャスティング法や、接着剤を離型性フィルム上に一旦塗布し、乾燥させた後、基材上に転写させるラミネート法等が好適である。なお、接着剤層を構成する成分を、有機溶剤、例えばトルエン、キシレン、クロルベンゼン等の芳香族系、アセトン、メチルエチルケトン、メチルイソブチルケトン等のケトン系、ジメチルホルムアミド、ジメチルアセトアミド、Ｎ−メチルピロリドン等の非プロトン系極性溶剤、テトラヒドロフラン等の単独あるいは混合物に対して１質量％以上好ましくは５質量％以上溶解して接着剤塗布液として使用することが好ましい。   As a method of forming an adhesive layer on one surface of the substrate, a casting method in which the adhesive is directly applied on the substrate and dried, or an adhesive is once applied on the release film and dried. Thereafter, a laminating method or the like that is transferred onto a substrate is suitable. The components constituting the adhesive layer are organic solvents such as aromatics such as toluene, xylene, chlorobenzene, ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, etc. It is preferable to use it as an adhesive coating solution by dissolving 1% by mass or more, preferably 5% by mass or more of the aprotic polar solvent or tetrahydrofuran alone or in a mixture thereof.

本発明の接着シートの接着剤層上に剥離可能な保護フィルムを貼着し、半導体装置製造直前に保護フィルムを剥離する構成としても良い。この場合には、接着シートが製造されてから使用されるまでの間に、接着剤層が損傷されることを防止することができる。保護フィルムとしては離型性を有するものであればいかなるフィルムを用いても良いが、例えばポリエステル、ポリエチレン、ポリプロピレン、ポリエチレンテレフタレート等のフィルムや、これらフィルムの表面をシリコーン樹脂又はフッ素化合物で離型処理したフィルム等を例示することができる。     It is good also as a structure which sticks the protective film which can be peeled on the adhesive bond layer of the adhesive sheet of this invention, and peels a protective film just before manufacture of a semiconductor device. In this case, it is possible to prevent the adhesive layer from being damaged after the adhesive sheet is manufactured and used. Any film may be used as the protective film as long as it has releasability. For example, films such as polyester, polyethylene, polypropylene, polyethylene terephthalate, etc., and the surface of these films are treated with a silicone resin or a fluorine compound. The film etc. which were done can be illustrated.

また、１５０℃から２５０℃の温度範囲全てにおける前記接着剤層の硬化後の貯蔵弾性率は、０.１ＭＰａ以上、好ましくは１ＭＰａ以上、更に５ＭＰａ以上であることが好ましい。なお、ここでいう硬化後とは、ダイアタッチ工程において加熱処理された状態における接着剤層のことをいう。半導体装置を製造するためのワイヤボンディング工程においては、ボンディングワイヤを用いて半導体素子とリードフレームとを接続するために、該ボンディングワイヤの両端を１５０〜２５０℃に加熱して６０〜１２０ｋＨｚの超音波で融着する際、リードフレームの直下に位置する接着シートの接着剤層は、上記加熱による高温に曝されて低弾性化し、超音波を吸収し易くなり、その結果リードフレームが振動してワイヤボンディング不良が発生しやすいが、上記貯蔵弾性率を有する接着剤層をもつ接着シートの場合は、このような問題が発生しにくくなる。     Further, the storage elastic modulus after curing of the adhesive layer in the entire temperature range from 150 ° C. to 250 ° C. is 0.1 MPa or more, preferably 1 MPa or more, and more preferably 5 MPa or more. In addition, after hardening here means the adhesive bond layer in the state heat-processed in the die-attach process. In a wire bonding process for manufacturing a semiconductor device, in order to connect a semiconductor element and a lead frame using a bonding wire, both ends of the bonding wire are heated to 150 to 250 ° C. and an ultrasonic wave of 60 to 120 kHz. At the time of fusing, the adhesive layer of the adhesive sheet located directly under the lead frame is exposed to the high temperature due to the above heating and becomes low elastic and easily absorbs ultrasonic waves. As a result, the lead frame vibrates and wire Although bonding failure is likely to occur, such a problem is less likely to occur in the case of an adhesive sheet having an adhesive layer having the above storage elastic modulus.

（半導体装置の製造方法）
図１、図２に基づいて、本発明の接着シートを用いて、半導体装置を製造する方法の一例について説明する。以下、半導体装置としてＱＦＮを製造する場合を例として説明する。なお、図１はリードフレームを半導体素子を搭載する側から見たときの概略平面図であり、図２（ａ）〜（ｆ）は、図１に示すリードフレームからＱＦＮを製造する方法を示す工程図であって、リードフレームを図１のＡ−Ａ’線の拡大概略断面図である。 (Method for manufacturing semiconductor device)
An example of a method for manufacturing a semiconductor device using the adhesive sheet of the present invention will be described with reference to FIGS. Hereinafter, a case where QFN is manufactured as a semiconductor device will be described as an example. 1 is a schematic plan view of the lead frame as viewed from the side on which the semiconductor element is mounted. FIGS. 2A to 2F show a method of manufacturing QFN from the lead frame shown in FIG. It is process drawing, Comprising: A lead frame is an expansion schematic sectional drawing of the AA 'line of FIG.

はじめに、図１に示す概略構成のリードフレーム２０を用意する。リードフレーム２０は、ＩＣチップ等の半導体素子を搭載する島状の複数の半導体素子搭載部（ダイパッド部）２１を具備し、各半導体素子搭載部２１の外周に沿って多数のリード２２が配設されたものである。次に、図２（ａ）に示すように、接着シート貼着工程において、リードフレーム２０の一方の面上（下面）に、本発明の接着シート１０を接着剤層（図示略）側がリードフレーム２０側となるように貼着する。なお、接着シート１０をリードフレーム２０に貼着する方法としては、ラミネート法等が好適である。次に、図２（ｂ）に示すように、ダイアタッチ工程において、リードフレーム２０の半導体素子搭載部２１に、接着シート１０が貼着されていない側からＩＣチップ等の半導体素子３０を、ダイアタッチ剤（図示略）を用いて搭載する。     First, a lead frame 20 having a schematic configuration shown in FIG. 1 is prepared. The lead frame 20 includes a plurality of island-shaped semiconductor element mounting portions (die pad portions) 21 on which semiconductor elements such as IC chips are mounted, and a large number of leads 22 are arranged along the outer periphery of each semiconductor element mounting portion 21. It has been done. Next, as shown in FIG. 2A, in the adhesive sheet attaching step, the adhesive sheet 10 of the present invention is placed on one surface (lower surface) of the lead frame 20 with the adhesive layer (not shown) side on the lead frame. Adhere to the 20th side. As a method for adhering the adhesive sheet 10 to the lead frame 20, a laminating method or the like is suitable. Next, as shown in FIG. 2B, in the die attach step, the semiconductor element 30 such as an IC chip is attached to the semiconductor element mounting portion 21 of the lead frame 20 from the side where the adhesive sheet 10 is not adhered. It is mounted using a touch agent (not shown).

次に、ワイヤボンディング直前までにかかる熱履歴で、接着シートや、ダイアタッチ剤等から発生するアウトガス成分が、リードフレームに付着し、ワイヤの接合不良による歩留低下を防止するため、ワイヤボンディング工程実施前に、前記接着シート、ダイアタッチ剤、ＩＣチップが搭載されたリードフレームをプラズマクリーニングする。     Next, the wire bonding process prevents the outgas component generated from the adhesive sheet, die attach agent, etc. from adhering to the lead frame due to the heat history immediately before the wire bonding, and prevents the yield from being lowered due to poor bonding of the wires. Before implementation, the lead frame on which the adhesive sheet, die attach agent, and IC chip are mounted is plasma-cleaned.

次に、図２（ｃ）に示すように、ワイヤボンディング工程において、半導体素子３０とリードフレーム２０のリード２２とを、金ワイヤ等のボンディングワイヤ３１を介して電気的に接続する。次に、図２（ｄ）に示すように、樹脂封止工程において、図２（ｃ）に示す製造途中の半導体装置を金型内に載置し、封止樹脂（モールド材）を用いてトランスファーモールド（金型成型）することにより、半導体素子３０を封止樹脂４０により封止する。
次に、図２（ｅ）に示すように、接着シート剥離工程において、接着シート１０を封止樹脂４０及びリードフレーム２０から剥離することにより、複数のＱＦＮ５０が配列されたＱＦＮユニット６０を形成することができる。最後に、図２（ｆ）に示すように、ダイシング工程において、ＱＦＮユニット６０を各ＱＦＮ５０の外周に沿ってダイシングすることにより、複数のＱＦＮ５０を製造することができる。
このように本発明の接着シート１０を用いてＱＦＮ等の半導体装置を製造することにより、モールドフラッシュ防止性を維持したまま、該接着シートがプラズマクリーニング工程を経た状態においても、糊残りを防止することができ、半導体装置の不良品化を防止することができる。 Next, as shown in FIG. 2C, in the wire bonding step, the semiconductor element 30 and the leads 22 of the lead frame 20 are electrically connected through bonding wires 31 such as gold wires. Next, as shown in FIG. 2 (d), in the resin sealing step, the semiconductor device being manufactured shown in FIG. 2 (c) is placed in a mold, and a sealing resin (molding material) is used. The semiconductor element 30 is sealed with the sealing resin 40 by transfer molding (mold molding).
Next, as shown in FIG. 2E, in the adhesive sheet peeling step, the adhesive sheet 10 is peeled from the sealing resin 40 and the lead frame 20, thereby forming a QFN unit 60 in which a plurality of QFNs 50 are arranged. be able to. Finally, as shown in FIG. 2F, a plurality of QFNs 50 can be manufactured by dicing the QFN unit 60 along the outer periphery of each QFN 50 in the dicing step.
Thus, by manufacturing a semiconductor device such as QFN using the adhesive sheet 10 of the present invention, adhesive residue is prevented even when the adhesive sheet has undergone a plasma cleaning process while maintaining mold flash prevention. This can prevent the semiconductor device from being defective.

以下に実施例を用いて本発明をさらに詳しく説明するが、本発明はこれら実施例に限定されるものではない。
［接着シートの製造］
各実施例、比較例において、接着剤を調製して接着シートを作製し、得られた接着剤層や接着シートの評価を行った。
すなわち以下に示す組成及び配合比（質量部）で実施例１及び比較例１、２はトルエンに固形分２０質量％になる様に混合し、実施例２においてはメチルエチレンケトンに固形分２０質量％になる様に混合して接着剤溶液を作製した。
次に、耐熱性基材としてポリイミド樹脂フィルム（東レ・デュポン社製 商品名：カプトン１００ＥＮ、厚さ２５μｍ、ガラス転移温度３００℃以上、熱膨張係数１６ｐｐｍ／℃）を用い、その上に乾燥後の厚さが６μｍになるように、上記接着剤溶液を塗布した後、１２０℃で５分間乾燥させ、接着剤層を有する接着シートを得た。 Hereinafter, the present invention will be described in more detail using examples, but the present invention is not limited to these examples.
[Manufacture of adhesive sheets]
In each of Examples and Comparative Examples, an adhesive was prepared to produce an adhesive sheet, and the resulting adhesive layer and adhesive sheet were evaluated.
That is, Example 1 and Comparative Examples 1 and 2 were mixed in toluene so as to have a solid content of 20% by mass with the composition and blending ratio (parts by mass) shown below. % Was mixed to prepare an adhesive solution.
Next, a polyimide resin film (trade name: Kapton 100EN, thickness 25 μm, glass transition temperature 300 ° C. or higher, thermal expansion coefficient 16 ppm / ° C., manufactured by Toray DuPont Co., Ltd.) is used as a heat-resistant substrate, and after drying, The adhesive solution was applied so that the thickness was 6 μm, and then dried at 120 ° C. for 5 minutes to obtain an adhesive sheet having an adhesive layer.

［接着剤層の配合組成及び配合比］
（実施例１）
官能基を有するフルオロエチレンビニルエーテル共重合体 ３０質量部
（旭硝子社製 商品名：ルミフロンＬＦ９１６）
無水マレイン酸含有スチレン−エチレン−ブチレン共重合体※１ ７０質量部
（旭化成社製 商品名：タフテックＭ−１９１１）
硬化剤 １質量部
（日本ポリウレタン工業社製 商品名：コロネートＬ） [Composition composition and ratio of adhesive layer]
Example 1
Fluoroethylene vinyl ether copolymer having a functional group 30 parts by mass (trade name: Lumiflon LF916, manufactured by Asahi Glass Co., Ltd.)
Maleic anhydride-containing styrene-ethylene-butylene copolymer * 1 70 parts by mass (trade name: Tuftec M-1911 manufactured by Asahi Kasei Corporation)
1 part by mass of curing agent (trade name: Coronate L manufactured by Nippon Polyurethane Industry Co., Ltd.)

（実施例２）
官能基を有するフルオロエチレンビニルエーテル共重合体 １０質量部
（旭硝子社製 商品名：ルミフロンＬＦ９１６）
カルボキシ基含有アクリロニトリル−ブタジエン共重合体 ９０質量部
（ＪＳＲ社製 商品名：ＰＮＲ−１Ｈ）
硬化剤 １質量部
（日本ポリウレタン工業社製 商品名：コロネートＬ） (Example 2)
Fluoroethylene vinyl ether copolymer having a functional group 10 parts by mass (trade name: Lumiflon LF916, manufactured by Asahi Glass Co., Ltd.)
Carboxy group-containing acrylonitrile-butadiene copolymer 90 parts by mass (trade name: PNR-1H manufactured by JSR)
1 part by mass of curing agent (trade name: Coronate L manufactured by Nippon Polyurethane Industry Co., Ltd.)

（比較例１；反応性エラストマーが配合されていない例）
官能基を有するフルオロエチレンビニルエーテル共重合体 ２０質量部
（旭硝子社製 商品名：ルミフロンＬＦ２００）
スチレン−ブタジエン共重合体 ８０質量部
（旭化成社製 商品名：タフテックＨ−１０４１）
硬化剤 １質量部
（日本ポリウレタン工業社製 商品名：コロネートＬ） (Comparative Example 1: Example in which no reactive elastomer is blended)
Fluoroethylene vinyl ether copolymer having a functional group 20 parts by mass (trade name: Lumiflon LF200 manufactured by Asahi Glass Co., Ltd.)
80 parts by mass of styrene-butadiene copolymer (trade name: Tuftec H-1041 manufactured by Asahi Kasei Co., Ltd.)
1 part by mass of curing agent (trade name: Coronate L manufactured by Nippon Polyurethane Industry Co., Ltd.)

（比較例２；フッ素樹脂が配合されていない例）
カルボキシ基含有アクリロニトリル−ブタジエン共重合体 ２０質量部
（日本ゼオン社製 商品名：Ｎｉｐｏｌ １０７２Ｊ）
フェノール樹脂 ４０質量部
（新日本石油化学社製 商品名：ＤＰＰ−６０９５Ｈ）
エポキシ樹脂 ４０質量部
（大日本インキ化学工業社製 商品名：ＨＰ−７２００）
２−エチル−４−メチルイミダゾール（硬化剤） ８質量部
（東京化成社製）
※１：無水マレイン酸含有スチレン―エチレン―ブチレン共重合体
無水マレイン酸：スチレン：エチレン―ブチレン（質量比）＝０．５：３０：７０の共重合体 (Comparative Example 2: Example in which no fluororesin is blended)
Carboxy group-containing acrylonitrile-butadiene copolymer 20 parts by mass (trade name: Nipol 1072J, manufactured by Nippon Zeon Co., Ltd.)
40 parts by mass of phenol resin (trade name: DPP-6095H, manufactured by Nippon Petrochemical Co., Ltd.)
Epoxy resin 40 parts by mass (trade name: HP-7200, manufactured by Dainippon Ink & Chemicals, Inc.)
2-ethyl-4-methylimidazole (curing agent) 8 parts by mass (manufactured by Tokyo Chemical Industry Co., Ltd.)
* 1: Maleic anhydride-containing styrene-ethylene-butylene copolymer Maleic anhydride: styrene: ethylene-butylene (mass ratio) = 0.5: 30: 70 copolymer

［評価方法］ [Evaluation methods]

＜接着シートの評価＞
１．モールドフラッシュ
実施例及び比較例において得られた接着シートを、外寸２００ｍｍ×６０ｍｍのＱＦＮ用リードフレーム（Ａｕ−Ｐｄ−ＮｉメッキＣｕリードフレーム、４×１６個（計６４個）のマトリックス配列、パッケージサイズ１０ｍｍ×１０ｍｍ、８４ピン）にラミネート法により貼着した。次いで、オーブン中でダイアタッチ相当の熱処理１７５℃で１時間処理した後、プラズマクリーニング処理を行った。プラズマクリーニング条件は、プラズマエッチング装置（ヤマト科学社製、商品名：Ｖ１０００）を用いて、使用ガス：Ａｒ、ガス流量：４５ｓｃｃｍ、ＲＦ出力：４５０Ｗ、処理時間：５分である。次にホットプレート上でワイヤボンディング相当の熱処理を２２０℃で１５分の条件で行った。次にエポキシ系モールド剤（ビフェニルエポキシ系、フイラー量８５質量％）を用い、加熱温度を１８０℃、圧力を１０ＭＰａ、処理時間を３分間として、トランスファーモールド（金型成型）により、樹脂封止した。樹脂封止後の半導体装置６４個を検査し、リードの外部接続用部分（リードの接着シート側の面）に封止樹脂が付着している半導体装置数を、モールドフラッシュの発生個数として検出し、その結果を表１に示した。 <Evaluation of adhesive sheet>
1. The adhesive sheets obtained in the mold flash example and the comparative example were used for the QFN lead frame (Au-Pd-Ni plated Cu lead frame of 4 × 16 pieces (total of 64 pieces) matrix arrangement, package) having an outer size of 200 mm × 60 mm. (Size 10 mm × 10 mm, 84 pins). Next, after a heat treatment at 175 ° C. for 1 hour corresponding to die attach in an oven, a plasma cleaning treatment was performed. Plasma cleaning conditions were as follows: using a plasma etching apparatus (trade name: V1000, manufactured by Yamato Kagaku Co., Ltd.), gas used: Ar, gas flow rate: 45 sccm, RF output: 450 W, processing time: 5 minutes. Next, a heat treatment corresponding to wire bonding was performed on a hot plate at 220 ° C. for 15 minutes. Next, an epoxy molding agent (biphenyl epoxy, filler amount 85 mass%) was used, and the resin was sealed by transfer molding (mold molding) at a heating temperature of 180 ° C., a pressure of 10 MPa, and a treatment time of 3 minutes. . 64 semiconductor devices after resin sealing were inspected, and the number of semiconductor devices with sealing resin adhering to the external connection portion of the lead (the surface of the lead on the adhesive sheet side) was detected as the number of mold flash occurrences. The results are shown in Table 1.

２．糊残り
モールドフラッシュの評価後のリードフレームを用い、糊残りの評価を行った。先ず接着シートをリードフレームから剥離速度５００ｍｍ／ｍｉｎの条件で剥離した。接着シートの剥離後の半導体装置６４個を検査し、リードの外部接続用部分、モールド樹脂面を含む接着シート剥離面に接着剤が付着している半導体装置個数を、糊残りの発生数として表１に示した。 2. Adhesive residue Using the lead frame after the evaluation of the mold flash, the adhesive residue was evaluated. First, the adhesive sheet was peeled from the lead frame at a peeling speed of 500 mm / min. 64 semiconductor devices after peeling the adhesive sheet were inspected, and the number of semiconductor devices in which the adhesive adhered to the adhesive sheet peeling surface including the lead external connection portion and the mold resin surface was expressed as the number of remaining adhesives. It was shown in 1.

Figure 2007123711
Figure 2007123711

表１に示した結果より、本発明においては良好な特性が得られることが確認できた。   From the results shown in Table 1, it was confirmed that good characteristics were obtained in the present invention.

本発明の半導体装置製造用接着シートを用いてＱＦＮを製造する際に用いて好適なリードフレームの一例を示す概略平面図である。It is a schematic plan view which shows an example of a suitable lead frame used when manufacturing QFN using the adhesive sheet for semiconductor device manufacture of this invention. ＱＦＮの製造工程例を示すもので、図１のＡ−Ａ’断面図である。FIG. 3 is a cross-sectional view taken along the line A-A ′ of FIG. 1, illustrating an example of a manufacturing process of QFN.

符号の説明Explanation of symbols

１０ 半導体装置製造用接着シート ２０ リードフレーム ３０ 半導体素子 ３１ ボンディングワイヤ ４０ 封止樹脂

DESCRIPTION OF SYMBOLS 10 Adhesive sheet for semiconductor device manufacture 20 Lead frame 30 Semiconductor element 31 Bonding wire 40 Sealing resin

Claims (6)

基材と、接着剤層とを有し、かつ半導体装置のリードフレームまたは配線基板に剥離可能に貼着される半導体装置製造用接着シートにおいて、前記接着剤層はフッ素樹脂及び反応性エラストマーを含有することを特徴とする半導体装置製造用接着シート。   In an adhesive sheet for manufacturing a semiconductor device, which has a base material and an adhesive layer and is detachably attached to a lead frame or a wiring board of a semiconductor device, the adhesive layer contains a fluororesin and a reactive elastomer An adhesive sheet for manufacturing a semiconductor device. 前記フッ素樹脂が、フルオロオレフィンとビニルエーテルを含むモノマー原料を重合させてなる共重合体及び／またはフルオロオレフィンとビニルエステルを含むモノマー原料を重合させてなる共重合体であることを特徴とする請求項１に記載の半導体装置製造用接着シート。   The fluororesin is a copolymer obtained by polymerizing a monomer raw material containing fluoroolefin and vinyl ether and / or a copolymer obtained by polymerizing a monomer raw material containing fluoroolefin and vinyl ester. 2. An adhesive sheet for manufacturing a semiconductor device according to 1. 前記反応性エラストマーが、無水マレイン酸含有スチレン−エチレン−ブチレン共重合体であることを特徴とする請求項１または２に記載の半導体装置製造用接着シート。   The adhesive sheet for manufacturing a semiconductor device according to claim 1, wherein the reactive elastomer is a maleic anhydride-containing styrene-ethylene-butylene copolymer. 接着剤層の片面に保護フィルムが設けられていることを特徴とする請求項１〜３のいずれかに記載の半導体装置製造用接着シート。     The adhesive sheet for manufacturing a semiconductor device according to claim 1, wherein a protective film is provided on one side of the adhesive layer. 請求項１〜４のいずれかに記載の半導体装置製造用接着シートを用いて製造されたことを特徴とする半導体装置。     A semiconductor device manufactured using the adhesive sheet for manufacturing a semiconductor device according to claim 1. 請求項１〜４のいずれかに記載の半導体装置製造用接着シートを用いて製造することを特徴とする半導体装置の製造方法。


A method for manufacturing a semiconductor device, comprising: using the adhesive sheet for manufacturing a semiconductor device according to claim 1.


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