JP2007115739A5 - - Google Patents
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- JP2007115739A5 JP2007115739A5 JP2005302709A JP2005302709A JP2007115739A5 JP 2007115739 A5 JP2007115739 A5 JP 2007115739A5 JP 2005302709 A JP2005302709 A JP 2005302709A JP 2005302709 A JP2005302709 A JP 2005302709A JP 2007115739 A5 JP2007115739 A5 JP 2007115739A5
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- semiconductor device
- conductive layer
- laser beam
- composition
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Claims (10)
酸素雰囲気において前記組成物に第１のレーザ光を照射して第１の導電層を形成し、
窒素、希ガス、水素のいずれかの雰囲気において、前記第１の導電層に第２のレーザ光を照射して第２の導電層を形成し、
前記第２の導電層上に絶縁層を形成することを特徴とする半導体装置の作製方法。 Applying a composition containing conductive particles on a substrate,
Irradiating the composition with a first laser beam in an oxygen atmosphere to form a first conductive layer;
Irradiating the first conductive layer with a second laser beam in an atmosphere of nitrogen, rare gas, or hydrogen to form a second conductive layer;
A method for manufacturing a semiconductor device, wherein an insulating layer is formed over the second conductive layer.
酸素雰囲気において前記組成物に第１のレーザ光を照射することによって、前記組成物よりも導電性粒子の密度が高く、表面が平滑な第１の導電層を形成し、By irradiating the composition with a first laser beam in an oxygen atmosphere, a first conductive layer having a higher density of conductive particles than the composition and a smooth surface is formed.
窒素、希ガス、水素のいずれかの雰囲気において、前記第１の導電層に第２のレーザ光を照射することによって、前記第１の導電層よりも抵抗値が低い第２の導電層を形成し、By irradiating the first conductive layer with a second laser beam in an atmosphere of nitrogen, rare gas, or hydrogen, a second conductive layer having a resistance value lower than that of the first conductive layer is formed. And
前記第２の導電層上に絶縁層を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein an insulating layer is formed over the second conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005302709A JP4732118B2 (en) | 2005-10-18 | 2005-10-18 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005302709A JP4732118B2 (en) | 2005-10-18 | 2005-10-18 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007115739A JP2007115739A (en) | 2007-05-10 |
| JP2007115739A5 true JP2007115739A5 (en) | 2008-10-23 |
| JP4732118B2 JP4732118B2 (en) | 2011-07-27 |
Family
ID=38097684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005302709A Expired - Fee Related JP4732118B2 (en) | 2005-10-18 | 2005-10-18 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4732118B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8334537B2 (en) * | 2007-07-06 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP2009290112A (en) * | 2008-05-30 | 2009-12-10 | Fujifilm Corp | Conductive inorganic film, method for manufacturing thereof, wiring board, and semiconductor device |
| FR2958075B1 (en) * | 2010-03-24 | 2012-03-23 | Univ Paris Curie | METHOD FOR PRODUCING A METAL ELECTRODE ON THE SURFACE OF A HYDROPHOBIC MATERIAL |
| JP2012023285A (en) * | 2010-07-16 | 2012-02-02 | Seiko Instruments Inc | Method of manufacturing tft using photosensitive application-type electrode material |
| CN105006656B (en) * | 2015-07-24 | 2017-09-29 | 哈尔滨工业大学 | Automatically controlled scanning wave guide wave leakage antenna based on liquid crystal |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3690552B2 (en) * | 1997-05-02 | 2005-08-31 | 株式会社アルバック | Metal paste firing method |
| JP2002339076A (en) * | 2001-05-16 | 2002-11-27 | Jsr Corp | Method for forming metallic copper thin film and composition for forming copper thin film |
| JP4932150B2 (en) * | 2003-10-21 | 2012-05-16 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor element |
-
2005
- 2005-10-18 JP JP2005302709A patent/JP4732118B2/en not_active Expired - Fee Related
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