JP2007107047A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP2007107047A JP2007107047A JP2005298879A JP2005298879A JP2007107047A JP 2007107047 A JP2007107047 A JP 2007107047A JP 2005298879 A JP2005298879 A JP 2005298879A JP 2005298879 A JP2005298879 A JP 2005298879A JP 2007107047 A JP2007107047 A JP 2007107047A
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- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
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- 125000005605 benzo group Chemical group 0.000 description 1
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
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- 239000005388 borosilicate glass Substances 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
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- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
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- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 150000005839 radical cations Chemical class 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
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Abstract
【解決手段】蒸発源100は筒状セル128と、それを加熱する下側ヒータ134、上側ヒータ136を備えている。加熱板130は、その内側に設けたヒータ138により温度制御が可能となっている。加熱板130は、連結する材料供給部102から筒状セル128内に供給される蒸着材料を加熱し、蒸発若しくは昇華によって気化させる。加熱板130を筒状セル128内で回転させる回転機構132を設け温度の均一化を図っても良い。材料供給部102を加熱するヒータ140を設けて、筒状セル128内に供給する蒸着材料の温度を上げるようにしても良い。このような蒸発源100により、大面積の基板に対しても均一性良く、連続して成膜することができる。
【選択図】図4
Description
本実施の形態は、加熱部に蒸着用の材料を供給する手段を備えた蒸発源を成膜処理室に含む成膜装置の構成を図1と図2を参照して説明する。
本実施の形態は、蒸発源を固定し、基板を移動させて蒸着を行う成膜処理室の構成を図3を参照して説明する。
本実施の形態は、蒸発源と基板との両者を動かして蒸着を行う成膜処理室の構成について図9を用いて説明する。
本実施の形態は、成膜装置の成膜処理室に備える蒸発源と、材料供給部の一例を図4、図5、図6を参照して説明する。図4は、蒸発源100、材料供給部102、材料供給管103、材料供給源104が組み合わされた状態を示している。
本実施の形態は、成膜装置の成膜処理室に備える材料供給部、材料供給源の一例を図7を参照して説明する。本実施の形態では、蒸着材料の利用効率を高め、大面積基板にも連続して蒸着するために、気流により蒸着材料の粉末を供給する構成について示す。
本実施の形態は、成膜装置の成膜処理室に備える材料供給部、材料供給源の一例を図8を参照して説明する。本実施の形態では、蒸着材料の利用効率を高め、大面積基板にも連続して蒸着するために、蒸着材料を溶剤中に溶解又は分散させた原料液を搬送し、噴霧器によりエアロゾル化し、エアロゾル中の溶媒を気化させながら蒸着を行うための構成について示す。
本実施の形態は、実施の形態1乃至6のいずれかの構成を備える成膜装置により作製されるEL素子の一例について説明する。本実施の形態では、一対の電極間にEL層を有するEL素子について説明する。
本実施の形態は、実施の形態1〜6で示される成膜装置により作製される発光装置の一例を図11を参照して説明する。なお、発光装置とは、画素とも呼ばれる表示単位を複数個配列させて文字、図形、記号、標識、静止画、動画などを表示する装置が含まれる。画素の配列にはマトリクス状に配列されるもの、セグメント状に配列されるものなどさまざまなものが含まれる。その他にも、発光装置には、明暗、色調などを変化させて情報を表示する装置全般が含まれる。また、光源若しくは照明として用いられる装置全般を含むものとする。
本実施の形態は、実施の形態1〜6で示される成膜装置により作製することのできる発光装置の一例を図14を参照して説明する。
本実施の形態は、実施の形態1〜6で示される成膜装置により作製することのできる発光装置の一例を図面を参照して説明する。本実施の形態では、特にトランジスタを含む素子基板の製造工程において、少なくとも一部にフォトマスクを用いないで所定のパターンを形成する工程を含む発光装置について図面を参照し説明する。
本実施の形態は、実施の形態1〜6で示される成膜装置により作製することのできる発光装置の一例を図面を参照して説明する。特に本実施の形態は、チャネルエッチ型のトランジスタを含む素子基板の製造工程において、少なくとも一部にフォトマスクを用いないで所定のパターンを形成する工程を含む発光装置について図面を参照し説明する。
実施の形態10、実施の形態11で示す表示装置において、走査線入力端子部と信号線入力端子部とに保護ダイオードを設けた一態様について図27を参照して説明する。図27は、画素704にはスイッチング用トランジスタ802、駆動用トランジスタ804が設けられている。
本実施の形態は、実施の形態8〜実施の形態12における発光装置の表示部における画素の配列と、その画素に対応したEL層の蒸着方法を図29と図30を参照して説明する。
本実施の形態は、実施の形態1〜6で示す成膜装置で、被膜を形成するときの成膜方法の一例について示す。
図32及び図33は、実施の形態12、実施の形態13、実施の形態14の素子基板800に駆動回路などを実装したモジュールの一例を示している。図32及び図33において、素子基板800には、画素704により構成される画素部702が形成されている。
実施の形態15により作製されるモジュールによって、テレビ装置を完成させることができる。図34はテレビ装置の主要な構成を示すブロック図を示している。素子基板900には、画素部901が形成されている。信号線駆動回路902と走査線駆動回路903は、素子基板900にCOG方式により実装されていても良い。
本実施の形態は、実施の形態16で示すいずれか一の表示モジュールを用いた携帯電話機の一例について、図36、図37を参照して説明する。
12 搬送室
14 ロード室
16 アンロード室
18 加熱処理室
20 成膜処理室
22 成膜処理室
24 成膜処理室
26 プラズマ処理室
28 成膜処理室
30 成膜処理室
32 成膜処理室
34 成膜処理室
36 中間室
38 封止処理室
40 搬送手段
42 搬送手段
44 ゲートバルブ
100 蒸発源
102 材料供給部
103 材料供給管
104 材料供給源
106 基板ステージ
108 多関節アーム
110 基板チャック
111 マスクチャック
112 天板
114 底板
116 基板
118 シャドーマスク
120 蒸発源ホルダ
122 移動機構
124 第1のガイドレール
126 第2のガイドレール
128 筒状セル
130 加熱板
132 回転機構
134 ヒータ
136 ヒータ
138 ヒータ
140 ヒータ
141 筒状体
142 放出口
144 ガス供給源
143 エアロゾル形成器
146 ガス加熱ヒータ
148 ガス導入口
150 粉体攪拌チャンバ
152 ガス供給源
154 流量制御バルブ
156 サージタンク
158 ストップバルブ
160 攪拌ロータ
162 ストップバルブ
164 サージタンク
166 ポンプ
168 流量調節バルブ
170 ガス供給源
172 流量調節バルブ
174 成膜処理室
176 移動機構
178 第2のガイドレール
180 基板搬送機構
182 第1のガイドレール
184 ヒータ
200 基板
201 EL素子
202 第1電極
204 第2電極
206 EL層
208 第1層
210 第2層
212 第3層
214 第4層
214 絶縁体層
300 素子基板
302 駆動回路
302 駆動回路
302a 走査線駆動回路
302b 信号線駆動回路
304 表示部
305 画素
306 トランジスタ
307 モニタ回路
307 表示部
308 トランジスタ
310 トランジスタ
312 トランジスタ
313 保持容量部
314 絶縁層
316 半導体層
318 絶縁層
320 ゲート電極
322 パッシベーション層
324 層間絶縁層
325 配線
326 配線
327 配線
328 絶縁層
329 配線
330 隔壁層
331 配線
333 配線
334 封止基板
338 端子
338a 端子
338b 端子
338c 端子
338d 端子
340 配線基板
342 接着剤
400 基板
402 画素
404 表示部
410 配線
412 配線
414 絶縁層
416 隔壁
44a ゲートバルブ
500 表示部
502 画素(R)
504 画素(G)
506 画素(B)
506b 画素(B)
508 画素(W)
508b 画素(W)
508c 画素(W)
508d 画素(W)
510 絵素
512 絵素
514 絵素
516 絵素
520 シャドーマスク
522 開口部
600 基板
602 素子基板
604 蒸発源
650 ゲート電極
652 半導体層
654 絶縁層
656 配線
658 共通電位線
662 保護ダイオード
664 保護ダイオード
666 保護ダイオード
700 基板
702 画素部
704 画素
704a 画素
704b 画素
704c 画素
706 入力端子
708 入力端子
710 走査線ドライバIC
712 信号線ドライバIC
720 ゲート配線
722 ゲート電極
724 容量電極
726 ゲート電極
728 ゲート絶縁層
730 絶縁体層
732 絶縁体層
734 絶縁体層
736 半導体層
738 絶縁体層
740 マスク
742 絶縁体層
744 n型半導体層
746 マスク
748 半導体層
750 n型半導体層
752 貫通孔
754 配線
756 配線
760 配線
762 n型半導体層
766 電極
768 保護層
770 絶縁体層
772 配線
774 配線
776 EL層
778 電極
780 EL素子
782 シール材
784 封止基板
786 フレキシブル配線基板
788 マスク
790 半導体層
800 素子基板
802 スイッチング用トランジスタ
804 駆動用トランジスタ
820 保護回路
822 樹脂
824 駆動回路
826 配線基板
828 外部回路
830 ヒートパイプ
832 放熱板
834 スペーサ
836 樹脂フィルム
836a 着色層
836b 着色層
836c 着色層
900 素子基板
901 画素部
902 信号線駆動回路
903 走査線駆動回路
904 チューナ
905 映像信号増幅回路
906 映像信号処理回路
907 コントロール回路
908 信号分割回路
909 音声信号増幅回路
910 音声信号処理回路
911 制御回路
912 入力部
913 スピーカ
920 筐体
921 表示画面
922 スピーカ
924 操作スイッチ
950 モジュール
952 キー入力スイッチ
954 回路基板
956 二次電池
958 筐体
959 筐体
960 アンテナ
961 高周波回路
962 ベースバンドプロセッサ
963 スピーカ
964 マイクロフォン
965 CCDモジュール
966 補助メモリ入力インターフェース
967 光センサ
968 キー入力スイッチ
969 通信インターフェース
970 音声・画像処理プロセッサ
971 CPU
972 メモリ
973 記録媒体
974 電源回路
975 コントローラ
976 表示パネル
977 表示パネル
978 二次電池
Claims (6)
- 蒸着材料を基板に被着させる蒸発源と、
前記蒸発源を該基板の主表面に沿って走査させる移動機構と、
前記蒸発源に蒸着材料を間欠的に供給する材料供給部と
を有することを特徴とする成膜装置。 - 蒸着材料が溶媒中に溶解又は分散している原料液をエアロゾル化し該エアロゾル中の前記溶媒を間欠的に放出する材料供給部と、
前記材料供給部と連結し前記溶媒を蒸発若しくは昇華させる蒸発源と、
前記蒸発源を該基板の主表面に沿って走査させる移動機構と、
を有することを特徴とする成膜装置。 - キャリアガスと共に粉体状の蒸着材料を間欠的に放出する材料供給部と、
前記材料供給部と連結し前記溶媒を蒸発若しくは昇華させる蒸発源と、
前記蒸発源を該基板の主表面に沿って走査させる移動機構と、
を有することを特徴とする成膜装置。 - 請求項1乃至3のいずれか一項において、前記蒸発源が複数個備えられていることを特徴とする成膜装置。
- 請求項1乃至4のいずれか一項において、前記蒸発源は、筒状セルと、該筒状セル内に加熱板を有することを特徴とする成膜装置。
- 請求項5において、前記筒状セルは、気化した蒸着材料の放出口が絞り込まれ細口径化していることを特徴とする成膜装置。
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JP4974504B2 (ja) | 2012-07-11 |
KR101329016B1 (ko) | 2013-12-19 |
KR20070041387A (ko) | 2007-04-18 |
US20070087130A1 (en) | 2007-04-19 |
US8932682B2 (en) | 2015-01-13 |
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